JPH0581314B2 - - Google Patents
Info
- Publication number
- JPH0581314B2 JPH0581314B2 JP58022767A JP2276783A JPH0581314B2 JP H0581314 B2 JPH0581314 B2 JP H0581314B2 JP 58022767 A JP58022767 A JP 58022767A JP 2276783 A JP2276783 A JP 2276783A JP H0581314 B2 JPH0581314 B2 JP H0581314B2
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- wafer
- station
- ultrasonic
- cleaned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 claims description 57
- 239000007788 liquid Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 34
- 230000003749 cleanliness Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
本発明は半導体ウエハの超音波洗浄方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ultrasonic cleaning method for semiconductor wafers.
周知のように超音波洗浄方法は機械加工部品、
ガラス加工部品等、種々の分野で使用されてい
る。 As is well known, the ultrasonic cleaning method is used for machining parts,
It is used in various fields such as glass processing parts.
しかし、従来の超音波洗浄装置では、洗浄槽中
の洗浄液に超音波振動を与え、その超音波振動し
た洗浄液中に被洗浄物を入れ、洗浄する方法が主
流を占めている。 However, in conventional ultrasonic cleaning apparatuses, the mainstream method is to apply ultrasonic vibrations to a cleaning liquid in a cleaning tank, and to place the object to be cleaned into the ultrasonicly vibrated cleaning liquid.
しかし、この方法では下記のような難点がある
ことが本発明者の検討の結果判明した。すなわち
従来方法は、超音波力により、被洗浄物から除去
された異物が、洗浄液中に存在する。このため除
去された異物が被洗浄物に再作用し、激しく衝突
した場合には被洗浄物にダメージを与えたり、除
去された洗浄液中の異物が被洗浄物に再付着した
場合には汚染となるため、高清浄度を要求する洗
浄法として不向きである。 However, as a result of studies conducted by the present inventors, it has been found that this method has the following drawbacks. That is, in the conventional method, foreign matter removed from the object to be cleaned by ultrasonic force is present in the cleaning liquid. For this reason, the removed foreign matter may re-act on the object to be cleaned, causing damage to the object if it collides violently, or causing contamination if the foreign matter in the removed cleaning liquid re-adheres to the object to be cleaned. Therefore, it is not suitable as a cleaning method that requires high cleanliness.
本発明の目的は、サイズの異なる多様な異物を
確実に除去することにより、半導体ウエハの表裏
両面の高清浄度の洗浄を実現することが可能な半
導体ウエハの超音波洗浄方法を提供することにあ
る。 An object of the present invention is to provide an ultrasonic cleaning method for semiconductor wafers that can realize high cleanliness cleaning of both the front and back surfaces of semiconductor wafers by reliably removing various foreign substances of different sizes. be.
本発明の他の目的は、洗浄中の異物の再付着や
衝突などによる半導体ウエハの汚染や損傷を確実
に防止することが可能な半導体ウエハの超音波洗
浄方法を提供することにある。 Another object of the present invention is to provide an ultrasonic cleaning method for semiconductor wafers that can reliably prevent contamination or damage to semiconductor wafers due to reattachment or collision of foreign objects during cleaning.
以下、実施例によつて本発明を説明する。 The present invention will be explained below with reference to Examples.
図は、本発明の一実施例である半導体ウエハの
超音波洗浄方法を実施する超音波洗浄装置の要部
を示す略断面図である。なお、以下の説明では、
半導体ウエハを単にウエハと記す。被洗浄物であ
るウエハ１は駆動プーリ２および３個の従動プー
リ３に掛けられた丸ベルト４上に載り、駆動プー
リ２の回転によつて搬送される。駆動プーリ２は
モータ５によつて回転する。また、前記丸ベルト
移動域には洗浄部が設けられている。この洗浄部
にはウエハ１の移動方向に沿つて噴流式洗浄液供
給機構６を有する洗浄Ａステーシヨン７と洗浄Ｂ
ステーシヨン８が配設されている。前記噴流式洗
浄液供給機構６には丸ベルト４を挟んで上下に上
振動子９および下振動子１０が配設されている。
また、これら振動子９，１０は超音波発振電源部
１１によつて超音波発振するようになつている。
また、前記両振動子９，１０は各部に設けた流孔
１２からフイルタ１３を通つて清浄となつた洗浄
液１４が噴き出すようになつている。そして、ウ
エハ１は丸ベルト４によつて移動する際、洗浄Ａ
ステーシヨン７および洗浄Ｂステーシヨン８で流
孔１２から噴出される洗浄液１４によつて両面
（上下面）および周面を勢いよく洗浄される。こ
の際、洗浄液１４は、上・下振動子９，１０によ
つて一定の周波数で超音波振動し、洗浄効果を高
めるようになつている。また、洗浄Ａステーシヨ
ン７と洗浄Ｂステーシヨ８ではそれぞれ異なる周
波数で超音波振動するようになつている。周波数
が低いと異物径の大きなものが洗浄除去でき、周
波数が高くなるに従つて異物径の小さなものが洗
浄除去できる。そこで、洗浄Ａステーシヨン７で
は低い周波数、たとえば28KHzで振動させ、洗浄
Ｂステーシヨン８では高い周波数、たとえば400
〜800KHzで振動させる。 The figure is a schematic cross-sectional view showing the main parts of an ultrasonic cleaning apparatus for carrying out an ultrasonic cleaning method for semiconductor wafers, which is an embodiment of the present invention. In addition, in the following explanation,
A semiconductor wafer is simply referred to as a wafer. A wafer 1, which is an object to be cleaned, is placed on a round belt 4 hooked around a driving pulley 2 and three driven pulleys 3, and is transported by the rotation of the driving pulley 2. The drive pulley 2 is rotated by a motor 5. Further, a cleaning section is provided in the round belt movement area. This cleaning section includes a cleaning A station 7 having a jet cleaning liquid supply mechanism 6 and a cleaning B station along the moving direction of the wafer 1.
A station 8 is provided. In the jet type cleaning liquid supply mechanism 6, an upper vibrator 9 and a lower vibrator 10 are arranged above and below with the round belt 4 in between.
Further, these transducers 9 and 10 are configured to oscillate ultrasonic waves by an ultrasonic oscillation power supply section 11.
Further, both the vibrators 9 and 10 are configured so that clean cleaning liquid 14 is jetted out through a filter 13 from flow holes 12 provided in each part. Then, when the wafer 1 is moved by the round belt 4, the cleaning A
At the station 7 and the cleaning B station 8, both surfaces (upper and lower surfaces) and the peripheral surface are vigorously cleaned by the cleaning liquid 14 jetted from the flow holes 12. At this time, the cleaning liquid 14 is ultrasonically vibrated at a constant frequency by the upper and lower vibrators 9 and 10 to enhance the cleaning effect. Further, the cleaning A station 7 and the cleaning B station 8 are configured to vibrate ultrasonic waves at different frequencies. When the frequency is low, foreign particles with a large diameter can be cleaned and removed, and as the frequency becomes high, foreign particles with a small diameter can be cleaned and removed. Therefore, cleaning A station 7 vibrates at a low frequency, for example 28KHz, and cleaning B station 8 vibrates at a high frequency, for example 400KHz.
Vibrate at ~800KHz.
一方、洗浄に関与した洗浄液は排出機構の漏斗
情の排液カバー１５で集められ、排出口１６から
外部に排出されるようになつている。 On the other hand, the cleaning liquid involved in cleaning is collected by a drain cover 15 of a funnel of the discharge mechanism, and is discharged to the outside from a discharge port 16.
次に超音波洗浄法について説明する。被洗浄物
であるウエハ１が丸ベルト４上にセツトされる
と、モータ５により丸ベルト４が回転し、ウエハ
１が洗浄Ａステーシヨン７に搬送されセツトされ
る。 Next, the ultrasonic cleaning method will be explained. When the wafer 1 to be cleaned is set on the round belt 4, the round belt 4 is rotated by the motor 5, and the wafer 1 is transported to the cleaning A station 7 and set thereon.
ウエハ１が洗浄Ａステーシヨン７にセツトされ
ると、前述のごとくフイルタ１３によつて洗浄化
され、かつ超音波振動する洗浄液１４がウエハ１
両面に供給され、噴流力および超音波力により、
ウエハ１両面が同時に洗浄される。 When the wafer 1 is set in the cleaning A station 7, the wafer 1 is cleaned by the filter 13 as described above, and the ultrasonically vibrating cleaning liquid 14 is applied to the wafer 1.
Supplied to both sides, jet force and ultrasonic force
Both sides of the wafer 1 are cleaned at the same time.
洗浄Ａステーシヨン７では低い領域の超音波周
波数を作用させウエハ両面の大きい付着異物を除
去する。（第１の洗浄段階）
洗浄Ａステーシヨン７での洗浄が完了すると再
びウエハ１は丸ベルト４により、洗浄Ｂステーシ
ヨン８に搬送されセツトされる。 At the cleaning A station 7, a low range of ultrasonic frequency is applied to remove large foreign particles from both surfaces of the wafer. (First Cleaning Stage) When the cleaning at the cleaning A station 7 is completed, the wafer 1 is again transported by the round belt 4 to the cleaning B station 8 and set there.
洗浄Ｂステーシヨン８では、前述洗浄Ａステー
シヨン７同様にウエハ１両面が洗浄される。洗浄
Ｂステーシヨン８では、洗浄Ａステーシヨン７よ
り高い周波数の超音波を作用させ洗浄Ａステーシ
ヨン７では除去出来なかつた微小付着異物を除去
する（第２の洗浄段階）。 At the cleaning B station 8, both surfaces of the wafer 1 are cleaned in the same way as at the cleaning A station 7 described above. At the cleaning B station 8, ultrasonic waves having a higher frequency than at the cleaning A station 7 are applied to remove minute foreign matter that could not be removed at the cleaning A station 7 (second cleaning stage).
このように本発明になる半導体ウエハの超音波
洗浄方法によれば、ウエハ１の両面の全域に、同
一の低い周波数の超音波振動が印加された洗浄液
１４を同時に供給することにより、ウエハ１の両
面を同時に洗浄する第１の洗浄段階を経た後、さ
らに、当該ウエハ１の両面の全域に対して、同一
のより高い周波数の超音波振動が印加された洗浄
液１４を同時に供給することにより洗浄する第２
の洗浄段階とを経るので、第１の洗浄段階では比
較的大きな異物が除去され、第２の洗浄段階では
前記第１の洗浄段階では除去しえなかつた微細な
異物が除去されることとなる。すなわち、サイズ
の異なる多様な異物が確実に除去さ、ウエハ１の
表裏両面を高清浄度に洗浄することができる。 As described above, according to the ultrasonic cleaning method for semiconductor wafers according to the present invention, the cleaning liquid 14 to which the same low frequency ultrasonic vibration is applied is simultaneously supplied to the entire area of both surfaces of the wafer 1, thereby cleaning the wafer 1. After passing through the first cleaning stage in which both surfaces are simultaneously cleaned, the entire area of both surfaces of the wafer 1 is further cleaned by simultaneously supplying the cleaning liquid 14 to which the same higher frequency ultrasonic vibration is applied. Second
Since the first cleaning stage removes relatively large foreign matter, the second cleaning stage removes fine foreign matter that could not be removed in the first cleaning stage. . That is, various foreign substances of different sizes can be reliably removed, and both the front and back surfaces of the wafer 1 can be cleaned with a high degree of cleanliness.
また、第１および第２の洗浄段階の何れにおい
ても、ウエハ１の両面が同時に洗浄されるので、
たとえば一方の側面の洗浄処理中に発生した異物
が他方の面に再付着して汚染するなどの不具合が
確実に防止され、ウエハ１の表裏両面を高度に清
浄化することができる。 Furthermore, both sides of the wafer 1 are cleaned at the same time in both the first and second cleaning stages.
For example, problems such as foreign matter generated during the cleaning process on one side surface re-adhering to the other side and contaminating it are reliably prevented, and both the front and back surfaces of the wafer 1 can be highly cleaned.
また、ウエハ１から離脱した異物は再びウエハ
１に接触することなく速やかに排出されるので、
離脱した異物がウエハ１に激しく衝突するなどの
懸念がなく、ウエハ１の表面が損傷を受けること
もない。 In addition, the foreign matter that has separated from the wafer 1 is quickly discharged without coming into contact with the wafer 1 again.
There is no fear that the detached foreign matter will violently collide with the wafer 1, and the surface of the wafer 1 will not be damaged.
図面は本発明の一実施例である半導体ウエハの
超音波洗浄方法が実施される超音波洗浄装置の要
部を示す略断面図である。
１……ウエハ（半導体ウエハ）、４……丸ベル
ト、６……噴流式洗浄液供給機構、７……洗浄Ａ
ステーシヨン、８……洗浄Ｂステーシヨン、９…
…上振動子、１０……下振動子、１１……超音波
発振電源部、１３……フイルタ、１４……洗浄
液、１５……排液カバー、１６……排出口。
The drawing is a schematic cross-sectional view showing a main part of an ultrasonic cleaning apparatus in which an ultrasonic cleaning method for semiconductor wafers, which is an embodiment of the present invention, is carried out. 1... Wafer (semiconductor wafer), 4... Round belt, 6... Jet cleaning liquid supply mechanism, 7... Cleaning A
Station, 8...Washing B station, 9...
...Upper vibrator, 10...Lower vibrator, 11...Ultrasonic oscillation power supply unit, 13...Filter, 14...Washing liquid, 15...Drainage cover, 16...Drain port.
Claims (1)
じ所定の第１の周波数の超音波振動が印加された
洗浄液を同時に供給することにより、前記半導体
ウエハの両面を同時に洗浄する第１の洗浄段階
と、この第１の洗浄段階に引続き、前記一つの半
導体ウエハの両面の全域に対し、前記第１の周波
数よりも高い第２の周波数の超音波振動が印加さ
れた洗浄液を同時に供給することにより、前記半
導体ウエハの両面を同時に洗浄する第２の洗浄段
階とからなることを特徴とする半導体ウエハの超
音波洗浄方法。1. A first cleaning step in which both sides of one semiconductor wafer are simultaneously cleaned by simultaneously supplying a cleaning liquid to which ultrasonic vibrations of the same predetermined first frequency are applied to the entire area of both sides of the semiconductor wafer. Subsequently to this first cleaning step, by simultaneously supplying a cleaning liquid to which ultrasonic vibrations of a second frequency higher than the first frequency are applied to the entire area of both surfaces of the one semiconductor wafer, An ultrasonic cleaning method for a semiconductor wafer, comprising a second cleaning step of cleaning both sides of the semiconductor wafer at the same time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276783A JPS59150584A (en) | 1983-02-16 | 1983-02-16 | Ultrasonic washing method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276783A JPS59150584A (en) | 1983-02-16 | 1983-02-16 | Ultrasonic washing method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59150584A JPS59150584A (en) | 1984-08-28 |
| JPH0581314B2 true JPH0581314B2 (en) | 1993-11-12 |
Family
ID=12091820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2276783A Granted JPS59150584A (en) | 1983-02-16 | 1983-02-16 | Ultrasonic washing method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59150584A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795540B2 (en) * | 1988-04-11 | 1995-10-11 | 株式会社日立製作所 | Method and apparatus for cleaning both sides of substrate using ultrasonic cleaning spray nozzle |
| JPH06106144A (en) * | 1992-09-30 | 1994-04-19 | Kokusai Denki Erutetsuku:Kk | Ultrasonic cleaning method and device therefor |
| JP4562589B2 (en) * | 2005-06-01 | 2010-10-13 | アイサワ工業株式会社 | Cleaning equipment |
| JP5169448B2 (en) * | 2008-05-01 | 2013-03-27 | 大日本印刷株式会社 | Film cleaning method and film cleaning apparatus |
| JP5520511B2 (en) * | 2009-04-07 | 2014-06-11 | サムスン電機ジャパンアドバンスドテクノロジー株式会社 | Disk drive device production method and disk drive device |
| US8312617B2 (en) * | 2009-09-17 | 2012-11-20 | Alphana Technology Co., Ltd. | Method of manufacturing a disk drive having a base member, bearing unit, drive unit and hub |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5153766A (en) * | 1974-11-07 | 1976-05-12 | Kaijo Denki Kk | NOZURUGATACHOONPASENJOSOCHI |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4711772U (en) * | 1971-03-04 | 1972-10-12 |
-
1983
- 1983-02-16 JP JP2276783A patent/JPS59150584A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5153766A (en) * | 1974-11-07 | 1976-05-12 | Kaijo Denki Kk | NOZURUGATACHOONPASENJOSOCHI |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59150584A (en) | 1984-08-28 |
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