JPH057462B2 - - Google Patents
Info
- Publication number
- JPH057462B2 JPH057462B2 JP1820084A JP1820084A JPH057462B2 JP H057462 B2 JPH057462 B2 JP H057462B2 JP 1820084 A JP1820084 A JP 1820084A JP 1820084 A JP1820084 A JP 1820084A JP H057462 B2 JPH057462 B2 JP H057462B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- raw material
- film
- material gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002994 raw material Substances 0.000 claims description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 description 36
- 239000010408 film Substances 0.000 description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
(1) 技術分野
本発明は、プラズマCVD（Chemical Vapor
Deposition）装置に関する。[Detailed Description of the Invention] (1) Technical Field The present invention relates to plasma CVD (Chemical Vapor CVD)
Deposition) device.
(2) 背景技術
近年、堆積膜、例えば非晶質珪素（アモルフア
スシリコン、以下ａ−Siと称する）等の薄膜等の
形成方法としてプラズマCVD法が注目されてい
る。(2) Background Art In recent years, plasma CVD has attracted attention as a method for forming deposited films, such as thin films of amorphous silicon (hereinafter referred to as a-Si).
この方法は一般には、真空槽内を高真空に減圧
し、原料ガスを真空槽に供給した後、グロー放電
又はアーク放電により原料ガスを分解し、真空槽
内に配置された基体上に堆積膜を形成するもので
ある。例えばこの方法によりシラン（SiH4）ガ
スを原料ガスとして形成したａ−Si膜は、ａ−Si
の禁止帯中に存在する局在準位が比較的少なく、
置換型不純物のドーピングにより価電子制御可能
となり、薄膜太陽電池、電子写真感光体の他、光
センサー等に使用されている。 In general, this method reduces the pressure inside the vacuum chamber to a high vacuum, supplies raw material gas to the vacuum chamber, decomposes the raw material gas by glow discharge or arc discharge, and deposits a film on a substrate placed in the vacuum chamber. It forms the For example, an a-Si film formed using silane (SiH 4 ) gas as a raw material gas by this method is
There are relatively few localized levels in the forbidden band of
Doping with substitutional impurities makes it possible to control valence electrons, and it is used in thin-film solar cells, electrophotographic photoreceptors, and optical sensors.
このようなプラズマCVD法に使用される装置
は、誘導結合型と容量結合型とに大別される。以
下、容量結合型のプラズマCVD装置を例として、
図面も参照しながらこの種の技術について説明す
る。 Devices used in such plasma CVD methods are broadly classified into inductively coupled types and capacitively coupled types. Below, we will take a capacitively coupled plasma CVD device as an example.
This type of technology will be explained with reference to the drawings.
第１図は、いわゆる容量結合型プラズマCVD
装置の典型的な例であり、その概略の構成を説明
するための縦断面図である。第１図のプラズマ
CVD装置は、真空ポンプ（不図示）等の排気系
により所望の圧力に保持することが可能な真空槽
３の中に平行に配置された１対の電極２，６を有
する。その一方の電極２には高周波が加えられ、
カソード電極２となる。他方の電極６は通常接地
されており、アノード電極６を形成する。シラン
等の原料ガスは、この二つの電極間の放電により
分解され、アノード電極６上に設置された基体５
の上にａ−Si膜を形成する。このようなプラズマ
CVD装置における原料ガスは、通常第１図又は
第２図の装置に示すような方法により真空槽内に
導かれるのが一般的である。第１図の装置では、
その電極側の面に多数の小孔９′が開けられてい
るパイプ製の輪９をカソード電極２とアノード電
極６の間に設ける。原料ガスは、真空槽３の外部
に設けられたボンベ８より輪９に供給され、プラ
ズマ反応部（すなわち、対向する電極２，６が形
成する空間）に輪９の小孔９′から放出される。
この場合には、原料ガスがプラズマ反応部の外部
から中心部の方向（矢印方向）に吹き出される
為、両電極２，６間に反応ガスのよどみを生じ易
い。このことにより一部ガスの異常分解等が発生
するため、この方法で作つたａ−Si膜は、膜の電
気的特性が劣る。又、反応ガスの濃度も不均一と
なる為膜厚の均一性も悪い。 Figure 1 shows the so-called capacitively coupled plasma CVD
It is a typical example of an apparatus, and is a longitudinal cross-sectional view for explaining the outline structure. Figure 1 plasma
The CVD apparatus has a pair of electrodes 2 and 6 arranged in parallel in a vacuum chamber 3 that can be maintained at a desired pressure by an exhaust system such as a vacuum pump (not shown). A high frequency is applied to one electrode 2,
This becomes the cathode electrode 2. The other electrode 6 is normally grounded and forms the anode electrode 6. The raw material gas such as silane is decomposed by the discharge between these two electrodes, and the substrate 5 placed on the anode electrode 6 is decomposed by the discharge between these two electrodes.
Form an a-Si film thereon. plasma like this
Raw material gas in a CVD apparatus is generally introduced into a vacuum chamber by a method as shown in the apparatus shown in FIG. 1 or 2. In the device shown in Figure 1,
A pipe ring 9 having a large number of small holes 9' formed on its electrode side surface is provided between the cathode electrode 2 and the anode electrode 6. The raw material gas is supplied to the ring 9 from a cylinder 8 provided outside the vacuum chamber 3, and is released from the small hole 9' of the ring 9 into the plasma reaction area (that is, the space formed by the opposing electrodes 2 and 6). Ru.
In this case, since the source gas is blown out from the outside of the plasma reaction section toward the center (in the direction of the arrow), stagnation of the reaction gas is likely to occur between the electrodes 2 and 6. This causes abnormal decomposition of some gases, so the a-Si film produced by this method has poor electrical properties. Furthermore, since the concentration of the reactant gas is also non-uniform, the uniformity of the film thickness is also poor.
一方、第２図のプラズマCVD装置では、カソ
ード電極１２そのものを中空構造とし、これと対
向するアノード電極１６側の面に多数の小孔２９
を設け、これら小孔２９より基体１５が設置され
ているアノード電極１６側に原料ガスを放出す
る。この場合には、原料ガスは、図の矢印の様に
流れる為、よどみがなく、かつ膜厚の均一性に優
れる特徴を有する。しかし、この方法では、プラ
ズマ中に供給される原料ガスがアノード電極１６
上に設置された成膜されるべき基体１６に向つて
直接吹出される。その為、この方法で作られたａ
−Si膜には、未分解のシランガスが取り込まれて
おり、太陽電池や光センサー用等の半導体膜とし
ての電気的性質が損われる欠点を有する。 On the other hand, in the plasma CVD apparatus shown in FIG. 2, the cathode electrode 12 itself has a hollow structure, and the surface facing the anode electrode 16 has many small holes 29.
are provided, and raw material gas is released from these small holes 29 to the anode electrode 16 side where the base 15 is installed. In this case, since the raw material gas flows as shown by the arrow in the figure, there is no stagnation and the film has excellent uniformity in thickness. However, in this method, the raw material gas supplied into the plasma is
It is blown directly toward the substrate 16 placed above and on which a film is to be formed. Therefore, a made using this method
The -Si film has the disadvantage that undecomposed silane gas is incorporated, which impairs its electrical properties as a semiconductor film for use in solar cells, optical sensors, and the like.
(3) 発明の開示
本発明は、上記の事実に鑑み成されたものであ
つて、本発明の目的は上記の問題点を解消し、良
質な堆積膜を形成し得る新規なプラズマCVD装
置を提供することにある。(3) Disclosure of the Invention The present invention has been made in view of the above facts, and an object of the present invention is to solve the above problems and provide a new plasma CVD apparatus capable of forming a deposited film of high quality. It is about providing.
本発明の上記目的は、以下の本発明によつて達
成される。 The above objects of the present invention are achieved by the following present invention.
減圧にし得る真空槽内に原料ガスを導入し、該
真空槽内に設けられた一対の電極間に放電を生じ
させ、該放電により該電極の一方に保持された基
体上に堆積膜を形成させるプラズマCVD装置に
おいて、前記基体が保持される電極を中空構造と
し且つ該電極の該基体が保持される面に１個以上
の孔を設け、該孔（以下、ガス放出孔と称する）
から前記原料ガスを前記真空槽内に放出するよう
にした事を特徴とするプラズマCVD装置。 A raw material gas is introduced into a vacuum chamber that can be reduced in pressure, a discharge is generated between a pair of electrodes provided in the vacuum chamber, and the discharge forms a deposited film on a substrate held by one of the electrodes. In a plasma CVD apparatus, the electrode on which the substrate is held has a hollow structure, and one or more holes are provided on the surface of the electrode on which the substrate is held, and the holes (hereinafter referred to as gas release holes) are provided.
A plasma CVD apparatus characterized in that the raw material gas is discharged into the vacuum chamber.
すなわち本発明の特長とするところは、上記の
如く基体の保持される電極から原料ガスを放出す
ることで、原料ガスのよどみや基体に原料ガスが
直接吹付けられる等の問題を解消し、膜質や膜厚
等の均一な良質な堆積膜を形成できるようにした
ことにある。 In other words, the feature of the present invention is that, as mentioned above, by releasing the raw material gas from the electrode on which the substrate is held, problems such as stagnation of the raw material gas and raw material gas being directly blown onto the substrate can be solved, and the film quality can be improved. The purpose of the present invention is to form a high-quality deposited film with uniform thickness and film thickness.
(4) 発明を実施するための最良の形態
以下、図面に基いて本発明を詳細に説明する。
尚、以下の説明では容量結合型の場合を示すが、
誘動結合型でも同様のことが言える。(4) Best Mode for Carrying Out the Invention The present invention will be explained in detail below based on the drawings.
In addition, although the following explanation shows the case of capacitive coupling type,
The same can be said for the inductively coupled type.
第３図は、本発明に係るプラズマCVD装置の
一例であり、その概要を説明するための縦断面図
である。第３図において、真空槽２３内には、一
対の電極２２，２６が設けられており、その形状
は平行円盤状とされている。電極２２は、高周波
電源２１に接続されており、カソード電極２２と
なる。もう一方の電極２６は、基体２５（本例で
はドーナツ状）を保持する電極であり、接地され
てアノード電極２６となる。基体２５の保持用と
されたアノード電極２６は、その内部が図の如く
中空構造とされており、原料ガスボンベ２８に配
管されている。アノード電極２６のカソード電極
２２に対向する面の所望の部分、本例では基体２
５で覆われていない部分には複数のガス放出孔３
０が開けられており、原料ガスはこれらガス放出
孔３０からカソード電極２２に向つて放出され
る。カソード電極２２に向つて矢印の如く拡散し
た原料ガスは、両電極間に生じているプラズマに
より十分に活性化され、基体２５上に堆積膜を形
成する。加熱ヒーター２７は、必ずしも設ける必
要はないが、本例における加熱ヒーター２７は基
体２５を加熱するという通常の目的の他に、原料
ガスを予熱する役目も成し、加熱ヒーター２７を
設けることで基体２５に堆積膜を形成する際の成
膜速度を高めることができる。 FIG. 3 is an example of a plasma CVD apparatus according to the present invention, and is a longitudinal cross-sectional view for explaining the outline thereof. In FIG. 3, a pair of electrodes 22 and 26 are provided in a vacuum chamber 23, and have a parallel disk shape. The electrode 22 is connected to the high frequency power source 21 and serves as a cathode electrode 22. The other electrode 26 is an electrode that holds the base 25 (donut-shaped in this example), and is grounded to become an anode electrode 26. The anode electrode 26 used to hold the base body 25 has a hollow structure inside as shown in the figure, and is piped to a source gas cylinder 28. A desired portion of the surface of the anode electrode 26 facing the cathode electrode 22, in this example, the base 2
There are multiple gas release holes 3 in the part not covered by 5.
0 are opened, and the source gas is discharged from these gas discharge holes 30 toward the cathode electrode 22. The raw material gas diffused toward the cathode electrode 22 as shown by the arrow is sufficiently activated by the plasma generated between the two electrodes, and forms a deposited film on the substrate 25. The heating heater 27 is not necessarily provided, but in addition to the normal purpose of heating the substrate 25, the heating heater 27 in this example also serves to preheat the raw material gas. The film formation rate when forming the deposited film on the film 25 can be increased.
本発明においては基体を保持する電極を中空構
造とし且つ該電極の基体が設置される面にガス放
出孔を設けることを必須とするが、基体を保持す
る電極は上記例の如くアノード電極としてもよい
し、カソード電極を基体保持用とすることも可能
である。電極への基体の保持は、上記例の如き場
合には電極上に置くだけでよいが、必要に応じて
ネジ等の固定手段によつて電極上に基体を固定す
ることも可能である。 In the present invention, it is essential that the electrode that holds the substrate has a hollow structure and that gas release holes are provided on the surface of the electrode where the substrate is installed, but the electrode that holds the substrate can also be used as an anode electrode as in the above example. It is also possible to use the cathode electrode for holding the substrate. To hold the substrate on the electrode, it is sufficient to simply place it on the electrode in the case like the above example, but it is also possible to fix the substrate on the electrode using fixing means such as screws, if necessary.
電極形状は円盤状、平板状等の所望の形状とし
得るが、上記例の如く平行に配設するのが好まし
い。ガス放出孔も所望の形状とし得るが、例えば
上記例の如く円形のものであれば、直径0.2〜５
mm、通常は直径0.5〜1.0mmのものを電極上の基体
が保持される以外の部分に、１個以上設けること
で、本発明の目的を十分に達成することが可能で
ある。ガス放出孔の配設位置は、上記例の如く電
極上の基体が保持される以外の部分とすることが
好ましい。 The electrodes may have any desired shape, such as a disc or a flat plate, but are preferably arranged in parallel as in the above example. The gas release hole can also have a desired shape, but for example, if it is circular like the above example, it has a diameter of 0.2 to 5.
The object of the present invention can be fully achieved by providing one or more electrodes with a diameter of 0.5 to 1.0 mm on a portion of the electrode other than where the substrate is held. It is preferable that the gas release holes be located at a location other than where the substrate on the electrode is held, as in the above example.
以下に実施例を示し本発明を更に詳細に説明す
る。 The present invention will be explained in more detail with reference to Examples below.
＜実施例＞
第３図に示したプラズマCVD装置を用いて、
ガラス製の角型板状基体にａ−Si膜の成膜を行つ
た。尚、円盤状のアノード電極上のガス放出孔の
配列は、円盤状の直径方向に十字状に複数個配列
し、該放出孔で区切られた円盤上の４つの部分
に、上記角型板状基体を一度に４個おいて成膜し
た。原料ガスとしてはSiH4ガスを用い、ガス流
量および真空槽内の圧力をそれぞれ0.1〜２／
hr、0.1〜2Torrとし、基体温度を100〜350℃に
保ち13.56MHzの高周波電源によりカソード電極
上に高周波電圧を印加して成膜を行つたところ、
膜質、膜厚ともに均一で電気特性も優れたａ−Si
膜が、従来に比し短時間で成膜された。<Example> Using the plasma CVD apparatus shown in Fig. 3,
An a-Si film was formed on a square plate-shaped substrate made of glass. The gas release holes on the disk-shaped anode electrode are arranged in a cross shape in the diameter direction of the disk, and the square plate-shaped Films were formed using four substrates at a time. SiH 4 gas is used as the raw material gas, and the gas flow rate and the pressure in the vacuum chamber are adjusted to 0.1 to 2/2, respectively.
The film was formed by applying a high frequency voltage on the cathode electrode using a 13.56 MHz high frequency power supply while keeping the substrate temperature between 100 and 350°C.
a-Si with uniform film quality and thickness and excellent electrical properties
The film was formed in a shorter time than conventional methods.
以上に説明した如く本発明によれば、膜質や膜
厚が均一で電気特性等の諸特性にも優れたａ−Si
等の堆積膜を形成することが可能であり、しかも
成膜速度も向上したプラズマCVD装置を提供し
得るものである。 As explained above, according to the present invention, the a-Si film has uniform film quality and thickness and is excellent in various properties such as electrical properties.
It is possible to provide a plasma CVD apparatus which is capable of forming deposited films such as the above, and which also has an improved film formation rate.
第１図および第２図は、従来例のプラズマ
CVD装置の縦断面図、第３図は本発明に係るプ
ラズマCVD装置の一例の縦断面図である。
１，１１，２１……高周波電源、２，１２，２
２……カソード電極、３，１３，２３……真空
槽、４，１４，２４……真空排気口、５，１５，
２５……基体、６，１６，２６……アノード電
極、７，１７，２７……加熱ヒーター、８，１
８，２８……原料ガスボンベ、９……原料ガス放
出管、９′，２９，３０……ガス放出孔。
Figures 1 and 2 show conventional plasma
FIG. 3 is a vertical cross-sectional view of an example of a plasma CVD apparatus according to the present invention. 1, 11, 21...High frequency power supply, 2, 12, 2
2... Cathode electrode, 3, 13, 23... Vacuum chamber, 4, 14, 24... Vacuum exhaust port, 5, 15,
25...Substrate, 6,16,26...Anode electrode, 7,17,27...Heating heater, 8,1
8, 28... Raw material gas cylinder, 9... Raw material gas discharge pipe, 9', 29, 30... Gas discharge hole.
Claims (1)
該真空槽内に設けられた一対の電極間に放電を生
じさせ、該放電により該電極の一方に保持された
基体上に堆積膜を形成させるプラズマCVD装置
において、前記基体が保持される電極を中空構造
とし且つ該電極の該基体が保持される面に１個以
上の孔を設け、該孔から前記原料ガスを前記真空
槽内に放出するようにした事を特徴とするプラズ
マCVD装置。1 Introduce the raw material gas into a vacuum chamber that can be reduced in pressure,
In a plasma CVD apparatus in which a discharge is generated between a pair of electrodes provided in the vacuum chamber, and a deposited film is formed on a substrate held by one of the electrodes by the discharge, the electrode on which the substrate is held is A plasma CVD apparatus characterized in that the electrode has a hollow structure, and one or more holes are provided in the surface of the electrode on which the base is held, and the raw material gas is discharged into the vacuum chamber from the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1820084A JPS60162777A (en) | 1984-02-06 | 1984-02-06 | Plasma cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1820084A JPS60162777A (en) | 1984-02-06 | 1984-02-06 | Plasma cvd apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60162777A JPS60162777A (en) | 1985-08-24 |
| JPH057462B2 true JPH057462B2 (en) | 1993-01-28 |
Family
ID=11964990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1820084A Granted JPS60162777A (en) | 1984-02-06 | 1984-02-06 | Plasma cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60162777A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4979467A (en) * | 1988-05-06 | 1990-12-25 | Fujitsu Limited | Thin film formation apparatus |
| JP2581487B2 (en) * | 1992-06-15 | 1997-02-12 | 中外炉工業株式会社 | Film forming method in plasma film forming apparatus |
| JP6123390B2 (en) * | 2013-03-15 | 2017-05-10 | 東洋製罐株式会社 | Film formation by high frequency plasma CVD |
-
1984
- 1984-02-06 JP JP1820084A patent/JPS60162777A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60162777A (en) | 1985-08-24 |
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