JPH0573049B2 - - Google Patents
Info
- Publication number
- JPH0573049B2 JPH0573049B2 JP61048627A JP4862786A JPH0573049B2 JP H0573049 B2 JPH0573049 B2 JP H0573049B2 JP 61048627 A JP61048627 A JP 61048627A JP 4862786 A JP4862786 A JP 4862786A JP H0573049 B2 JPH0573049 B2 JP H0573049B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- discharge tube
- light source
- tube unit
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 238000005192 partition Methods 0.000 claims description 20
- 239000012495 reaction gas Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 6
- 230000005284 excitation Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 4
- 238000006303 photolysis reaction Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000001443 photoexcitation Effects 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、例えば超LSI技術等に用いられ得る
光励起プロセス装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an optical excitation process device that can be used, for example, in VLSI technology.
［従来の技術］
従来の光励起プロセス装置では、光源として低
圧水銀ランプ（4.9eV、6.7eV）やArF（6.4eV）、
KrF（5.0eV）、XeCl（4.0eV）等のエキシマレーザ
ー等が主に用いられてきた。[Conventional technology] Conventional optical excitation process equipment uses low-pressure mercury lamps (4.9eV, 6.7eV), ArF (6.4eV),
Excimer lasers such as KrF (5.0eV) and XeCl (4.0eV) have been mainly used.
ところで、太陽電池の材料等に用いられるａ−
Si：Ｈ膜の堆積においては原料ガスとして例えば
SiH4が用いられるが、SiH4の光吸収が、7.7eV以
上で生じるので、これらの光源ではエネルギが小
さくSiH4を直接光分解できない。また例えば
Si2H6は、光吸収端が6.2eV付近なので、低圧水
銀ランプやArFエキシマレーザーで光分解できる
が、堆積速度が小さい。 By the way, a-
In the deposition of Si:H film, the raw material gas is e.g.
SiH 4 is used, but since optical absorption of SiH 4 occurs above 7.7 eV, these light sources have too little energy to directly photodecompose SiH 4 . Also, for example
Since the optical absorption edge of Si 2 H 6 is around 6.2 eV, it can be photodecomposed using a low-pressure mercury lamp or ArF excimer laser, but the deposition rate is slow.
特開昭60−74426号の出願には、高エネルギの
真空紫外光源を用いた光励起プロセス装置が提案
されており、この装置では、放電用ガスとして例
えばD2（10.20eV）、Ar（11.62eV、11.83eV）、Kr
（10.03eV、10.64eV）、Xe（8.43eV、9.57eV）等
を用いることができる。これらの放電用ガスを用
いることにより、10eV前後の真空紫外光を発生
させることができ、SiH4を原料ガスに用いたａ
−Si：Ｈ膜の高速堆積を容易に行なうことができ
る。またこの光源においては光透過窓材として
MgF2やCaF2、LiF等が用いられており、比較的
小さな照射面積では高輝度の光が放射される。 In the application of JP- A -60-74426, a photoexcitation process device using a high-energy vacuum ultraviolet light source is proposed. , 11.83eV), Kr
(10.03eV, 10.64eV), Xe (8.43eV, 9.57eV), etc. can be used. By using these discharge gases, vacuum ultraviolet light of around 10 eV can be generated, and a
-Si:H film can be easily deposited at high speed. In addition, in this light source, it can be used as a light-transmitting window material.
MgF 2 , CaF 2 , LiF, etc. are used, and high-intensity light is emitted from a relatively small irradiation area.
［発明が解決しようとする問題点］
上述のような従来装置では、放電管を大きくし
て発光空間を拡げると発光効率が落ちていまうこ
とや、光透過窓に差圧が加わるので大きな窓材を
用いる場合には窓の厚さを増さなければならず、
それにつれて光透過率が悪くなるために、高輝度
でしかも照射面積の大きな真空紫外光源を作るこ
とができないという欠点があつた。[Problems to be solved by the invention] In the conventional device as described above, the luminous efficiency decreases when the discharge tube is enlarged to expand the luminous space, and a pressure difference is applied to the light transmitting window, so a large window material is required. When using a window, the thickness of the window must be increased,
As a result, the light transmittance deteriorates, resulting in the disadvantage that it is not possible to create a vacuum ultraviolet light source with high brightness and a large irradiation area.
そこで、本発明の目的は、10eV前後の高エネ
ルギでしかも大きな照射面積、高輝度の光源を備
えた光励起プロセス装置を提供することにある。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a photoexcitation process apparatus that is equipped with a light source that has a high energy of around 10 eV, a large irradiation area, and high brightness.
［問題点を解決するための手段］
上記の目的を達成するために、本発明の光励起
プロセス装置は、処理すべき基板を挿置しかつ反
応ガスを導入するようにした反応室と、MgF2、
CaF2、LiF等の窓材から成る光透過窓をそれぞれ
備えかつ互いに仕切られた比較的小さな多数の放
電管ユニツト、放電用ガスを供給する放電用ガス
導入ポート、及び各放電管ユニツト間の仕切りに
設けられ、放電用ガス導入ポートからの放電用ガ
スを各放電管ユニツトへ等しい圧力で導入させる
連通孔を備えた光源と、光源における各放電管ユ
ニツトを収容し、反応室に導入した反応ガスを光
分解反応させるため各放電管ユニツトからの光を
反応室に導入する光源室とを有することを特徴と
している。[Means for Solving the Problems] In order to achieve the above object, the photoexcitation process apparatus of the present invention includes a reaction chamber in which a substrate to be processed is inserted and a reaction gas is introduced, and an MgF 2 ,
A large number of relatively small discharge tube units each equipped with a light-transmitting window made of a window material such as CaF 2 or LiF and partitioned from each other, a discharge gas introduction port that supplies discharge gas, and partitions between each discharge tube unit. A light source equipped with a communication hole that introduces the discharge gas from the discharge gas introduction port into each discharge tube unit at equal pressure, and a reactor gas that accommodates each discharge tube unit in the light source and is introduced into the reaction chamber. It is characterized by having a light source chamber that introduces light from each discharge tube unit into the reaction chamber in order to cause a photodecomposition reaction.
また、本発明の別の特徴によれば、処理すべき
基板を挿置しかつ反応ガスを導入するようにした
反応室と、MgF2、CaF2、LiF等の窓材から成る
光透過窓をそれぞれ備えかつ互いに仕切られた比
較的小さな多数の放電管ユニツト、放電用ガスを
供給する放電用ガス導入ポート、及び各放電管ユ
ニツト間の仕切りに設けられ、放電用ガス導入ポ
ートからの放電用ガスを各放電管ユニツトへ等し
い圧力で導入させる連通孔を備えた光源と、光源
における各放電管ユニツトを収容し、反応室に導
入した反応ガスを光分解反応させるため各放電管
ユニツトからの光を反応室に導入する光源室と、
光源室と反応室とを仕切り、開口率の大きな光透
過開口部を形成するメツシユを備えた隔壁とから
成り、光源室側において隔壁に沿つて不活性ガス
を導入し、光源室内の圧力を反応室内の圧力より
僅かに高くするようにされる。 According to another feature of the present invention, a reaction chamber in which a substrate to be processed is inserted and a reaction gas is introduced, and a light-transmitting window made of a window material such as MgF 2 , CaF 2 , LiF, etc. A large number of relatively small discharge tube units are provided and separated from each other, a discharge gas introduction port is provided for supplying discharge gas, and a discharge gas introduction port is provided in the partition between each discharge tube unit to supply discharge gas from the discharge gas introduction port. A light source is equipped with a communication hole that introduces gas into each discharge tube unit at equal pressure, and a light source that accommodates each discharge tube unit in the light source and that uses light from each discharge tube unit to cause a photodecomposition reaction of the reaction gas introduced into the reaction chamber. a light source chamber introduced into the reaction chamber;
It consists of a partition wall equipped with a mesh that partitions the light source chamber and the reaction chamber and forms a light transmission opening with a large aperture ratio.Inert gas is introduced along the partition wall on the light source chamber side, and the pressure inside the light source chamber is reduced. The pressure is kept slightly higher than the pressure inside the room.
［作用］
このように構成した本発明による光励起プロセ
ス装置では、各放電管ユニツトは、発光空間が比
較的小さく、発光効率を高くとることができ、ま
た光透過窓を薄くでき、良好な光透過率を保証す
ることができる。これにより、光源は高エネルギ
で大照射面積をもちしかも高輝度の光を発生する
ことができる。[Function] In the optical excitation process device of the present invention configured as described above, each discharge tube unit has a relatively small light emitting space, and can achieve high light emitting efficiency. Furthermore, the light transmitting window can be made thin, so that good light transmittance can be achieved. rate can be guaranteed. This allows the light source to generate high-energy, large-irradiation area, and high-intensity light.
また、本発明の別の特徴による装置では、光源
室内における不活性ガスの流れは隔壁およびメツ
シユに沿つて層流となり、反応室内に導入される
反応ガスに対する一種の隔壁として作用し、また
不活性ガスの一部はメツシユを通つて反応室内へ
拡散する。その結果、反応ガスの光源室への逆拡
散は防止され、光強度の減少を抑制することがで
きる。 In addition, in the device according to another feature of the present invention, the flow of the inert gas in the light source chamber is laminar along the partition wall and the mesh, which acts as a kind of partition wall for the reaction gas introduced into the reaction chamber, and A portion of the gas diffuses into the reaction chamber through the mesh. As a result, back diffusion of the reaction gas into the light source chamber is prevented, and a decrease in light intensity can be suppressed.
［実施例］
以下、添附図面を参照して本発明の実施例につ
いて説明する。[Embodiments] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図には本発明による光励起プロセス装置の
一実施例を概略的に示し、１は反応室であり、そ
の内部に回転可能な基板ホルダ２が配置され、こ
の基板ホルダ２に処理すべき基板３が装着され、
また基板ホルダ２は図示していないが加熱手段を
備えている。反応室１の壁には図示したように反
応ガス導入ポート４と排気ポート５とが設けら
れ、反応ガス導入ポート４は適当な反応ガス供給
源（図示してない）に連結され、一方、排気ポー
ト５は真空ポンプ（図示してない）に連結され
る。 FIG. 1 schematically shows an embodiment of a photoexcitation processing apparatus according to the present invention, in which 1 is a reaction chamber, in which a rotatable substrate holder 2 is disposed, and a substrate to be processed is placed on this substrate holder 2. 3 is installed,
Further, although not shown, the substrate holder 2 is equipped with heating means. A reaction gas introduction port 4 and an exhaust port 5 are provided in the wall of the reaction chamber 1 as shown, and the reaction gas introduction port 4 is connected to a suitable reaction gas supply source (not shown), while the exhaust port 4 is connected to a suitable reaction gas supply source (not shown). Port 5 is connected to a vacuum pump (not shown).
隔壁６によつて反応室１から仕切られた光源室
７には壁を通して外部から放電管８が設けられ、
この放電管８は図示したように多数の放電管ユニ
ツト９から成つている。各放電管ユニツト９の前
端には第２図に明瞭に示すように光透過窓１０が
それぞれ装着されている。また各放電管ユニツト
９間の仕切りには穴があけられており、そして放
電管８は光源室７の外側に設けられた放電用ガス
導入ポート１１を介して図示してない放電用ガス
供給源に連結される。各放電管ユニツト９はまた
放電用電源１２に接続されている。 A light source chamber 7 separated from the reaction chamber 1 by a partition wall 6 is provided with a discharge tube 8 from the outside through the wall.
The discharge tube 8 is made up of a large number of discharge tube units 9 as shown. A light transmitting window 10 is installed at the front end of each discharge tube unit 9, as clearly shown in FIG. In addition, a hole is made in the partition between each discharge tube unit 9, and the discharge tube 8 is connected to a discharge gas supply source (not shown) through a discharge gas introduction port 11 provided on the outside of the light source chamber 7. connected to. Each discharge tube unit 9 is also connected to a power source 12 for discharge.
放電管８と基板ホルダ２とを結ぶ光軸の通る隔
壁６の部分には光透過開口部１３が設けられ、こ
の光透過開口部１３には開口率の高いメツシユ１
４が張られている。また光源室７には隔壁６に沿
つてパージガス導入ポート１５と排気ポート１６
とが設けられ、パージガス導入ポート１５は適当
な不活性ガス供給源（図示してない）に連結さ
れ、またその先端部はメツシユ１４すなわち光透
過開口部１３の近くまでのび、メツシユ１４の全
域に沿つて不活性ガスを流すようにされる。また
排気ポート１６は図示してない適当な真空ポンプ
に連結される。 A light transmitting opening 13 is provided in the part of the partition wall 6 through which the optical axis connecting the discharge tube 8 and the substrate holder 2 passes, and a mesh 1 with a high aperture ratio is provided in the light transmitting opening 13.
4 is posted. In addition, the light source chamber 7 has a purge gas introduction port 15 and an exhaust port 16 along the partition wall 6.
The purge gas introduction port 15 is connected to a suitable inert gas supply source (not shown), and its tip extends close to the mesh 14, that is, the light transmission opening 13, and the purge gas introduction port 15 is connected to a suitable inert gas supply source (not shown). An inert gas is allowed to flow along the line. The exhaust port 16 is also connected to a suitable vacuum pump, not shown.
このように構成した図示装置において、放電用
ガス導入ポート１１から各放電管ユニツト９間の
仕切りに設けられた穴を通つて放電用ガスが各放
電管ユニツト９に等しい圧力で導入され、また放
電用電源１２からは各放電管ユニツト９に電力が
供給され、これにより、各放電管ユニツト９は放
電して真空紫外光を発生し、各真空紫外光は組み
合さつた光透過窓１０を通つて放射される。 In the illustrated device configured in this manner, discharge gas is introduced into each discharge tube unit 9 at equal pressure from the discharge gas introduction port 11 through the hole provided in the partition between each discharge tube unit 9, and the discharge gas is introduced into each discharge tube unit 9 at equal pressure. Power is supplied from the power source 12 to each discharge tube unit 9, so that each discharge tube unit 9 discharges and generates vacuum ultraviolet light, and each vacuum ultraviolet light is emitted through the combined light transmission window 10. be done.
一方、反応ガス導入ポート４を介して反応室１
内には所望の反応ガスが導入され、またパージガ
ス導入ポート１５を介して光源室７内には隔壁６
に沿つてN2、He、Ar等の不活性ガスが導入され
る。この場合、光源室７内の圧力は反応室１内の
圧力より僅かに高くなるように設定される。放電
管８の各放電管ユニツト９から放射された光は各
光透過窓１０および光透過開口部１３のメツシユ
１４を通つて反応室１内に導入される。こうして
基板上に膜を堆積させるCVDやエツチングを行
なうことができる。この場合、基板ホルダ２を回
転させることにより均一性の良いCVDやエツチ
ングが可能である。 On the other hand, the reaction chamber 1 is
A desired reaction gas is introduced into the interior of the light source chamber 7, and a partition wall 6 is introduced into the light source chamber 7 through a purge gas introduction port 15.
An inert gas such as N 2 , He, or Ar is introduced along the line. In this case, the pressure inside the light source chamber 7 is set to be slightly higher than the pressure inside the reaction chamber 1. The light emitted from each discharge tube unit 9 of the discharge tube 8 is introduced into the reaction chamber 1 through each light transmission window 10 and the mesh 14 of the light transmission opening 13. In this way, CVD or etching can be performed to deposit a film on the substrate. In this case, by rotating the substrate holder 2, uniform CVD and etching can be performed.
なお、図示実施例では、放電管８は９個の四角
柱状の放電管ユニツトで構成しているが、当然放
電管を構成する放電管ユニツトの数および形状は
必要に応じて任意に選定することができ、例えば
放電管ユニツトを円筒状に形成してもよい。 In the illustrated embodiment, the discharge tube 8 is composed of nine quadrangular columnar discharge tube units, but the number and shape of the discharge tube units constituting the discharge tube can of course be arbitrarily selected as necessary. For example, the discharge tube unit may be formed into a cylindrical shape.
［発明の効果］
以上説明してきたように、本発明による光励起
プロセス装置においては、光源をMgF2、CaF2、
LiF等の窓材を用いた比較的小さな多数の放電管
ユニツトで構成しているので、各放電管ユニツト
における発光空間を比較的小さくしてしかも発光
効率を高くとることができ、また光透過窓を薄く
でき、良好な光透過率を保証することができる。
これにより、光源は高エネルギで大照射面積をも
ちしかも高輝度の光を発生することができる。従
つて、大面積でしかも堆積速度やエツチング速度
の大きなCVDやエツチング処理等の光励起プロ
セスが可能となる。[Effects of the Invention] As explained above, in the optical excitation process apparatus according to the present invention, the light source is MgF 2 , CaF 2 ,
Since it is composed of a large number of relatively small discharge tube units using window materials such as LiF, the light emitting space in each discharge tube unit can be made relatively small and the light emission efficiency can be high. can be made thinner and ensure good light transmittance.
This allows the light source to generate high-energy, large-irradiation area, and high-intensity light. Therefore, photoexcitation processes such as CVD and etching treatments can be performed over a large area and at high deposition and etching rates.
また、本発明の装置において上記の構成に加え
て、光源室と反応室とを隔壁で分離し、上記隔壁
における光透過開口部を開口率の大きなメツシユ
で仕切り、光源室側において上記隔壁に沿つて不
活性ガスを導入し、光源室内の圧力を反応室内の
圧力より僅かに高くするように構成することによ
り、反応生成物等が光源の光透過窓に付着して光
透過窓の光透過率を低下させるのを抑制すること
ができ、これにより、装置を長時間安定して作動
させることができる。 In addition to the above configuration, in the apparatus of the present invention, the light source chamber and the reaction chamber are separated by a partition wall, and the light transmission opening in the partition wall is partitioned by a mesh with a large aperture ratio. By introducing an inert gas and making the pressure inside the light source chamber slightly higher than the pressure inside the reaction chamber, reaction products etc. adhere to the light transmitting window of the light source and the light transmittance of the light transmitting window increases. This allows the device to operate stably for a long period of time.
第１図は本発明の一実施例を示す概略断面図、
第２図は第１図の装置における放電管部分の構成
を示す拡大概略斜視図である。
図中、１：反応室、２：基板ホルダ、３：基
板、４：反応ガス導入ポート、５：排気ポート、
６：隔壁、７：光源室、８：放電管、９：放電管
ユニツト、１０：光透過窓、１１：放電用ガス導
入ポート、１２：放電用電源、１３：光透過開口
部、１４：メツシユ、１５：パージガス導入ポー
ト、１６：排気ポート。
FIG. 1 is a schematic sectional view showing an embodiment of the present invention;
FIG. 2 is an enlarged schematic perspective view showing the configuration of the discharge tube portion of the apparatus shown in FIG. 1. In the figure, 1: reaction chamber, 2: substrate holder, 3: substrate, 4: reaction gas introduction port, 5: exhaust port,
6: partition wall, 7: light source chamber, 8: discharge tube, 9: discharge tube unit, 10: light transmission window, 11: gas introduction port for discharge, 12: power source for discharge, 13: light transmission opening, 14: mesh , 15: purge gas introduction port, 16: exhaust port.
Claims (1)
するようにした反応室と、MgF2、CaF2、LiF等
の窓材から成る光透過窓をそれぞれ備えかつ互い
に仕切られた比較的小さな多数の放電管ユニツ
ト、放電用ガスを供給する放電用ガス導入ポー
ト、及び各放電管ユニツト間の仕切りに設けら
れ、放電用ガス導入ポートからの放電用ガスを各
放電管ユニツトへ等しい圧力で導入させる連通孔
を備えた光源と、光源における各放電管ユニツト
を収容し、反応室に導入した反応ガスを光分解反
応させるため各放電管ユニツトからの光を反応室
に導入する光源室とを有することを特徴とする光
励起プロセス装置。 ２ 処理すべき基板を挿置しかつ反応ガスを導入
するようにした反応室と、MgF2、CaF2、LiF等
の窓材から成る光透過窓をそれぞれ備えかつ互い
に仕切られた比較的小さな多数の放電管ユニツ
ト、放電用ガスを供給する放電用ガス導入ポー
ト、及び各放電管ユニツト間の仕切りに設けら
れ、放電用ガス導入ポートからの放電用ガスを各
放電管ユニツトへ等しい圧力で導入させる連通孔
を備えた光源と、光源における各放電管ユニツト
を収容し、反応室に導入した反応ガスを光分解反
応させるため各放電管ユニツトからの光を反応室
に導入する光源室と、光源室と反応室とを仕切
り、開口率の大きな光透過開口部を形成するメツ
シユを備えた隔壁とから成り、光源室側において
隔壁に沿つて不活性ガスを導入し、光源室内の圧
力を反応室内の圧力より僅かに高くするようにし
たことを特徴とする光励起プロセス装置。[Claims] 1. A reaction chamber into which a substrate to be processed is inserted and a reaction gas introduced, and a light-transmitting window made of a window material such as MgF 2 , CaF 2 , LiF, etc., and partitioned from each other. A large number of comparatively small discharge tube units, a discharge gas introduction port for supplying discharge gas, and a partition between each discharge tube unit are installed, and the discharge gas from the discharge gas introduction port is connected to each discharge tube unit. A light source equipped with a communication hole that allows the light to be introduced at equal pressure into the reaction chamber, and each discharge tube unit in the light source is housed, and light from each discharge tube unit is introduced into the reaction chamber in order to cause a photodecomposition reaction of the reaction gas introduced into the reaction chamber. A light excitation process device comprising a light source chamber. 2 A relatively small number of relatively small chambers each equipped with a reaction chamber into which the substrate to be processed is inserted and a reaction gas introduced, and a light-transmitting window made of a window material such as MgF 2 , CaF 2 , LiF, etc., and partitioned from each other. A discharge tube unit, a discharge gas introduction port for supplying discharge gas, and a partition between each discharge tube unit are provided to introduce discharge gas from the discharge gas introduction port into each discharge tube unit at equal pressure. A light source equipped with a communication hole, a light source chamber that houses each discharge tube unit in the light source and introduces light from each discharge tube unit into the reaction chamber in order to photodecompose the reaction gas introduced into the reaction chamber, and a light source chamber. and a partition wall equipped with a mesh that forms a light-transmitting opening with a large aperture ratio, and an inert gas is introduced along the partition wall on the light source chamber side to reduce the pressure inside the light source chamber. A light excitation process device characterized in that the pressure is slightly higher than the pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4862786A JPS62206823A (en) | 1986-03-07 | 1986-03-07 | Optical-pumping processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4862786A JPS62206823A (en) | 1986-03-07 | 1986-03-07 | Optical-pumping processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62206823A JPS62206823A (en) | 1987-09-11 |
| JPH0573049B2 true JPH0573049B2 (en) | 1993-10-13 |
Family
ID=12808628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4862786A Granted JPS62206823A (en) | 1986-03-07 | 1986-03-07 | Optical-pumping processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62206823A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2989063B2 (en) * | 1991-12-12 | 1999-12-13 | キヤノン株式会社 | Thin film forming apparatus and thin film forming method |
| JP6827287B2 (en) * | 2016-09-28 | 2021-02-10 | 株式会社日立ハイテク | How to operate the plasma processing equipment |
| WO2022059188A1 (en) * | 2020-09-18 | 2022-03-24 | 株式会社Kokusai Electric | Substrate processing device, plasma light emission device, method for manufacturing semiconductor device, and program |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59194425A (en) * | 1983-04-18 | 1984-11-05 | Mitsubishi Electric Corp | Photochemical vapor phase film forming apparatus |
-
1986
- 1986-03-07 JP JP4862786A patent/JPS62206823A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59194425A (en) * | 1983-04-18 | 1984-11-05 | Mitsubishi Electric Corp | Photochemical vapor phase film forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62206823A (en) | 1987-09-11 |
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