JPH0572069A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0572069A JPH0572069A JP23523391A JP23523391A JPH0572069A JP H0572069 A JPH0572069 A JP H0572069A JP 23523391 A JP23523391 A JP 23523391A JP 23523391 A JP23523391 A JP 23523391A JP H0572069 A JPH0572069 A JP H0572069A
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- pressure sensor
- differential pressure
- static pressure
- strain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は差圧伝送器等に用いる半
導体圧力センサに係り、特に静圧誤差の補償精度の向上
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor used in a differential pressure transmitter or the like, and more particularly to improvement of compensation accuracy of static pressure error.
【０００２】[0002]
【従来の技術】従来から圧力検出を行う為のセンサとし
ては種々のものが知られているが、その一つとして半導
体圧力センサが多く用いられている。半導体圧力センサ
は、単結晶半導体（例えばシリコン等）の優れた弾性を
利用して薄膜シリコンダイヤフラムの両面にかかる圧力
差に応答する応力を検出するものである。2. Description of the Related Art Conventionally, various types of sensors for detecting pressure have been known, and a semiconductor pressure sensor is widely used as one of them. The semiconductor pressure sensor detects the stress responsive to the pressure difference applied to both sides of the thin film silicon diaphragm by utilizing the excellent elasticity of a single crystal semiconductor (for example, silicon).
【０００３】図３（ａ），（ｂ）は従来の半導体圧力セ
ンサの構成例を示したもので、図３（ａ）はセンサチッ
プを台座管が接合されている反対側から見た平面図、図
３（ｂ）は差圧センサとそれと対応する静圧センサを含
む面でセンサチップを垂直に切った断面図である。FIGS. 3 (a) and 3 (b) show an example of the structure of a conventional semiconductor pressure sensor, and FIG. 3 (a) is a plan view of the sensor chip as seen from the side opposite to the base pipe. 3 (b) is a sectional view in which the sensor chip is cut vertically in a plane including the differential pressure sensor and the static pressure sensor corresponding thereto.
【０００４】このダイヤフラム１０１は、その一方の表
面に応力センサを形成した単結晶半導体センサチップ１
０２から成る。この目的に広く利用される応力センサは
ピエゾ抵抗特性を有し、センサの抵抗はチップ内の応力
が変化する時、センサにかかる応力によって変化する。
また、ダイヤフラム１０１を構成するセンサチップ１０
２の別の表面には円形空洞１０３が形成される。そし
て、この円形空洞１０３へ検出すべき圧力を導入する導
圧路１０４を有する円筒状の台座管１０５の一端がセン
サチップ１０２の他方の表面に接合して設けられてい
る。The diaphragm 101 is a single crystal semiconductor sensor chip 1 having a stress sensor formed on one surface thereof.
It consists of 02. A stress sensor widely used for this purpose has a piezoresistive characteristic, and the resistance of the sensor changes according to the stress applied to the sensor when the stress inside the chip changes.
In addition, the sensor chip 10 that constitutes the diaphragm 101
A circular cavity 103 is formed on the other surface of 2. Then, one end of a cylindrical pedestal tube 105 having a pressure guiding path 104 for introducing the pressure to be detected into the circular cavity 103 is provided by being joined to the other surface of the sensor chip 102.
【０００５】更に、通常、少なくとも一対の半径方向歪
みセンサ（半径方向差圧センサ１０６）と少なくとも一
対の接線方向歪みセンサ（接線方向差圧センサ１０７）
がダイヤフラムに形成される。これらのセンサは、ブリ
ッジ回路を構成するように電気的に相互接続され、ダイ
ヤフラム１０１にかかる差圧を表わす信号を出力するよ
うになっている。Further, usually, at least a pair of radial strain sensors (radial differential pressure sensor 106) and at least a pair of tangential strain sensors (tangential differential pressure sensor 107).
Is formed on the diaphragm. These sensors are electrically interconnected to form a bridge circuit and are adapted to output a signal representative of the differential pressure across diaphragm 101.
【０００６】一方、静圧下（ダイヤフラムの両面に同等
な圧力が印加されて差圧がゼロの場合）においても、ゼ
ロシフトと呼ばれる誤信号を生ずることがある。そこ
で、この静圧によって生ずる歪みを検出するセンサを上
記台座管と結合した反対側の面に差圧を検出するセンサ
と同様な配置で設け、静圧を表す信号を出力させて補正
をするようにしている。即ち、半径方向静圧センサ１０
８及び接線方向静圧センサ１０９である。On the other hand, even under static pressure (when equal pressure is applied to both surfaces of the diaphragm and the differential pressure is zero), an erroneous signal called zero shift may occur. Therefore, a sensor for detecting the strain caused by the static pressure is provided on the opposite surface connected to the pedestal tube in the same arrangement as the sensor for detecting the differential pressure, and a signal indicating the static pressure is output to correct the difference. I have to. That is, the radial static pressure sensor 10
8 and a tangential static pressure sensor 109.
【０００７】しかしながら、この静圧を検出するセンサ
は、差圧を検出するセンサと同一基板上で同様な位置関
係にあることから、差圧による歪みをも検出し、その応
答特性は一般に一義的な信号として得られない場合があ
る。However, since the sensor for detecting the static pressure has the same positional relationship on the same substrate as the sensor for detecting the differential pressure, the strain due to the differential pressure is also detected, and its response characteristic is generally unique. May not be obtained as a good signal.
【０００８】このような場合、静圧センサによって差圧
センサの信号を補正する手段では極めて大きな誤差を与
える危険がある。従って、従来では静圧センサもまた差
圧センサによる補正を必要とするという、極めて複雑な
補正関係が存在していた。In such a case, the means for correcting the signal of the differential pressure sensor by the static pressure sensor has a risk of giving an extremely large error. Therefore, conventionally, there has been a very complicated correction relationship that the static pressure sensor also requires correction by the differential pressure sensor.
【０００９】[0009]
【発明が解決しようとする課題】以上のように、従来の
半導体圧力センサにおいては、差圧下並びに静圧下にお
いてそれぞれ生ずる応答信号に対して精度良く相互に補
償することができないという問題点があった。本発明は
上記にような従来技術の問題点を除去し、半導体圧力セ
ンサの信頼性を追及するものである。As described above, the conventional semiconductor pressure sensor has a problem that the response signals generated under the differential pressure and the static pressure cannot be accurately compensated for each other. .. The present invention eliminates the problems of the prior art as described above and pursues the reliability of the semiconductor pressure sensor.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明においては、第１および第２の面を有し、前
記第１の面に空洞が形成された単結晶半導体材料からな
る所定形状の半導体基板と、前記半導体基板の第１の面
に結合され、かつ検出すべき圧力を前記空洞に導入する
導圧路を有する所定形状の台座管と、In order to achieve the above object, the present invention comprises a single crystal semiconductor material having first and second surfaces, and having a cavity formed in the first surface. A semiconductor substrate having a predetermined shape, and a pedestal tube having a predetermined shape, which is coupled to the first surface of the semiconductor substrate and has a pressure guiding path for introducing a pressure to be detected into the cavity.
【００１１】前記半導体基板の第２の面上であって、前
記空洞周縁の反対側近傍に形成された少なくとも１個の
前記周縁に対して垂直方向の差圧歪みセンサおよび少な
くとも１個の前記周縁に対して平行方向の差圧歪みセン
サと、A differential pressure strain sensor perpendicular to at least one of the peripheral edges formed on the second surface of the semiconductor substrate in the vicinity of the opposite side of the peripheral edge of the cavity and at least one peripheral edge. A differential pressure strain sensor parallel to the
【００１２】前記半導体基板の第２の面上であって、前
記台座管が接合された部分の反対側に前記差圧歪みセン
サと対応して同様な配置に形成された少なくとも１個の
前記周縁に対して垂直方向の静圧歪みセンサおよび少な
くとも１個の前記周縁に対して平行方向の静圧歪みセン
サと、On the second surface of the semiconductor substrate, on the opposite side of the portion where the pedestal tube is joined, at least one peripheral edge formed in a similar arrangement corresponding to the differential pressure strain sensor. A vertical static pressure strain sensor and at least one of the static pressure strain sensors parallel to the peripheral edge;
【００１３】前記各差圧歪みセンサとそれに対応する前
記各静圧歪みセンサの間の第２の面上にそれぞれ形成さ
れた歪み分離帯とを備えて成ることを特徴とする半導体
圧力センサを提供する。A semiconductor pressure sensor comprising: each of the differential pressure strain sensors and a strain separation band formed on the second surface between the corresponding static pressure strain sensors. To do.
【００１４】[0014]
【作用】このように構成された半導体圧力センサにおい
ては、差圧分の歪みを検出する差圧センサと静圧分の歪
みを検出する静圧センサとの間に歪み分離帯が存在する
ことにより、当該歪み分離帯の外側のセンサチップ上に
ある静圧センサには、差圧によるダイヤフラムの変形が
極めて伝わり難くなるため、差圧誤差信号が極めて微小
となる。これにより、静圧センサからの信号は静圧だけ
に応答した信号と見倣せる程の線形な信号として取り出
すことができる。In the semiconductor pressure sensor thus configured, the strain separation zone is present between the differential pressure sensor that detects the strain of the differential pressure and the static pressure sensor that detects the strain of the static pressure. Since the deformation of the diaphragm due to the differential pressure is extremely difficult to be transmitted to the static pressure sensor on the sensor chip outside the strain separation band, the differential pressure error signal becomes extremely small. As a result, the signal from the static pressure sensor can be extracted as a linear signal that can be regarded as a signal that responds only to the static pressure.
【００１５】[0015]
【実施例】以下、本発明の詳細を図示の実施例によって
説明する。The details of the present invention will be described below with reference to the illustrated embodiments.
【００１６】図１（ａ），（ｂ）は本発明による半導体
圧力センサの構成例を示したもので、図１（ａ）はセン
サチップを台座管と反対側の面から見た平面図、図１
（ｂ）は差圧センサとそれに対応する静圧センサを含む
面でセンサチップに垂直に切った断面図である。FIGS. 1 (a) and 1 (b) show an example of the structure of a semiconductor pressure sensor according to the present invention. FIG. 1 (a) is a plan view of a sensor chip as seen from the side opposite to the base tube, Figure 1
(B) is a cross-sectional view taken along a plane including the differential pressure sensor and the static pressure sensor corresponding thereto, taken perpendicularly to the sensor chip.
【００１７】図１（ａ），（ｂ）において、１は薄い方
形のセンサチップであり、例えばシリコンのような単結
晶半導体材料から成る。また、２は方形空洞であり、セ
ンサチップ１の面、即ち第１の面に形成される。更に、
３は四角柱状の台座管で、例えばパイレックスガラスか
らなり、方形空洞２に検出すべき圧力を導入する断面円
形の導圧路４を有している。これにより、方形空洞２を
覆うセンサチップ１の部分はダイヤフラム５を形成し、
ダイヤフラム５に発生する歪みは台座管３によって導か
れた圧力と、センサチップ１の他方の面、即ち第２の面
に印加される圧力との差に依存する。In FIGS. 1A and 1B, reference numeral 1 denotes a thin rectangular sensor chip, which is made of a single crystal semiconductor material such as silicon. Reference numeral 2 is a rectangular cavity, which is formed on the surface of the sensor chip 1, that is, the first surface. Furthermore,
A pedestal tube 3 having a rectangular column shape is made of, for example, Pyrex glass, and has a pressure guiding path 4 having a circular cross section for introducing a pressure to be detected into the rectangular cavity 2. As a result, the portion of the sensor chip 1 that covers the rectangular cavity 2 forms the diaphragm 5,
The strain generated in the diaphragm 5 depends on the difference between the pressure guided by the pedestal tube 3 and the pressure applied to the other surface of the sensor chip 1, that is, the second surface.
【００１８】一方、方形空洞２上のセンサチップ１の第
２の面には方形のセンサチップ１の垂直方向の歪みを検
出する垂直方向差圧センサ６及び平行方向の歪みを検出
する平行方向差圧センサ７が形成される。ここで、これ
らの差圧センサは、不純物、例えばボロンを方形空洞２
上のセンサチップ１の第２の面近傍に拡散等の手段によ
り注入してセンサチップ１と一体形成され、その形状は
センサの所望の形状によって決定される。このように形
成された差圧センサはピエゾ抵抗特性を有し、その抵抗
値はセンサが受ける歪みに従って変化する。On the other hand, on the second surface of the sensor chip 1 on the rectangular cavity 2, a vertical differential pressure sensor 6 for detecting the vertical strain of the rectangular sensor chip 1 and a parallel differential pressure sensor for detecting the parallel strain. The pressure sensor 7 is formed. Here, these differential pressure sensors use impurities such as boron as a rectangular cavity 2.
It is injected into the vicinity of the second surface of the upper sensor chip 1 by means such as diffusion to be integrally formed with the sensor chip 1, and its shape is determined by the desired shape of the sensor. The differential pressure sensor thus formed has a piezoresistive characteristic, and its resistance value changes according to the strain received by the sensor.
【００１９】これらの差圧センサは、ダイヤフラム５の
両面にかかる圧力差の結果としてダイヤフラム５内に誘
起する歪みに主として感応するものであるが、ダイヤフ
ラム５の両面にかかる圧力差が等しい時にダイヤフラム
５に生ずる歪みにも感応してしまう。この静圧による歪
み発生の原因は、センサチップ１と台座管３との異種材
料接合にある。そして、この歪みに対して感応するセン
サが静圧センサであり、本実施例では、垂直方向静圧セ
ンサ８及び平行方向静圧センサ９としてセンサチップ１
と台座管３との接合面上のセンサチップの第２の面近傍
にそれぞれ形成される。このようにして形成された静圧
センサはピエゾ抵抗を有しており、また各差圧センサと
各静圧センサとの間には歪み分離帯がそれぞれ形成され
ている。次に、図２（ａ），（ｂ）は台座管をセンサチ
ップ面と平行に切った断面図である。These differential pressure sensors are mainly sensitive to the strain induced in the diaphragm 5 as a result of the pressure difference applied to both sides of the diaphragm 5, but when the pressure difference applied to both sides of the diaphragm 5 is equal. It also responds to the distortion that occurs in. The cause of the distortion due to the static pressure is the dissimilar material bonding between the sensor chip 1 and the pedestal tube 3. The sensor sensitive to this distortion is a static pressure sensor, and in this embodiment, the vertical static pressure sensor 8 and the parallel static pressure sensor 9 are used as the sensor chip 1.
It is formed in the vicinity of the second surface of the sensor chip on the joint surface between the base tube 3 and the base tube 3. The static pressure sensor thus formed has a piezoresistance, and a strain separation band is formed between each differential pressure sensor and each static pressure sensor. Next, FIGS. 2A and 2B are cross-sectional views of the pedestal tube cut in parallel with the sensor chip surface.
【００２０】図２（ａ）は円形台座管１１の外表面と、
円形台座管１１の導圧路４に面した内表面に差圧ゼロの
状態で静圧が印加された場合を示している。（ここで、
矢印の数は特に意味を持たない。）FIG. 2A shows the outer surface of the circular pedestal tube 11,
It shows a case where a static pressure is applied to the inner surface of the circular pedestal tube 11 facing the pressure guiding path 4 with a differential pressure of zero. (here,
The number of arrows has no special meaning. )
【００２１】次に、図２（ｂ）には方形台座管１２及び
導圧路４に差圧ゼロの静圧が印加された場合を示してお
り、この場合、方形台座管１２各辺の中点付近の圧縮が
最も大きく図示のようになることが分かる。以上に基づ
き、台座管とセンサチップの接合後にセンサチップと台
座管との接合面直上の第２の面に誘起される歪みについ
て考える。Next, FIG. 2 (b) shows a case where a static pressure of zero differential pressure is applied to the rectangular pedestal tube 12 and the pressure guide path 4, and in this case, in each side of the rectangular pedestal tube 12. It can be seen that the compression in the vicinity of the point is the largest and becomes as shown in the figure. Based on the above, the strain induced in the second surface immediately above the joint surface between the sensor chip and the pedestal tube after the pedestal tube and the sensor chip are joined together will be considered.
【００２２】まず、図２（ａ）のような円形台座管１１
にセンサチップを接合すると、円形台座管１１の上述の
如き変形により、センサチップも等方的に歪みを生ずる
こととなる。これに対して、図２（ｂ）のような方形台
座管１２にセンサチップを接合した場合には、方形台座
管１２の上述の如き変形により、センサチップは各辺の
垂直二等分線近傍において、特に大きな歪みを生ずるこ
ととなる。即ち、台座管３が方形状でかつ中に断面円形
の導圧路４が開いているため、静圧による圧縮歪みが各
辺の垂直二等分線近傍に大きく発生し、かつその接合面
には異種材料のセンサチップが接合しているため、圧縮
率の小さいセンサチップには台座管３による大きな歪み
が伝わり、特にセンサチップ各辺の垂直二等分線近傍で
最大となる。従って、この際に静圧センサを各辺の垂直
二等分線近傍に配置することでより高い感度を得ること
ができる。First, a circular pedestal tube 11 as shown in FIG.
When the sensor chip is bonded to the sensor chip, the circular pedestal tube 11 is deformed as described above, so that the sensor chip is isotropically distorted. On the other hand, when the sensor chip is joined to the rectangular pedestal tube 12 as shown in FIG. 2B, the sensor chip is in the vicinity of the vertical bisector of each side due to the deformation of the rectangular pedestal tube 12 as described above. In particular, a particularly large distortion will occur. That is, since the pedestal tube 3 has a square shape and the pressure guiding path 4 having a circular cross section is opened therein, a compressive strain due to static pressure is largely generated in the vicinity of the perpendicular bisector of each side, and the joint surface thereof is Since the sensor chips made of different materials are bonded to each other, a large strain due to the pedestal tube 3 is transmitted to the sensor chip having a low compression rate, and becomes maximum especially near the vertical bisector of each side of the sensor chip. Therefore, at this time, by disposing the static pressure sensor in the vicinity of the vertical bisector of each side, higher sensitivity can be obtained.
【００２３】更に、積極的に形状を選択し感度を上げる
ためには、ここでは台座管３の形状を方形とし断面円形
の導圧路４を形成する場合を示したが、何らこれに限定
されるものではない。Further, in order to positively select the shape and increase the sensitivity, the case where the pedestal tube 3 has a square shape and the pressure guiding path 4 having a circular cross section is shown here, but it is not limited thereto. Not something.
【００２４】一方、図１（ａ），（ｂ）に示したように
ダイヤフラム５の両面の差圧に基づく歪みはセンサチッ
プ１上の歪み分離帯１０により、それより外側のセンサ
チップ上に位置する静圧センサには極めて伝わり難くし
ている。従って、静圧センサにおいては、差圧による誤
差が小さくなり、即ち、差圧の測定範囲内では一義的な
誤差特性を有するセンサと考えることができる。これに
より、静圧センサの信号は差圧センサの信号における静
圧誤差信号成分を補正するのに用いることができる。こ
こで、歪み分離帯１０の形成法としては、センサチップ
１を台座管３に接合する以前にエッチング等により設け
ることが考えられる。また、前述のように台座管の形状
を選択することにより大きな静圧センサ信号を得ること
ができ、より精度の高い静圧誤差信号分の補正が可能と
なる。On the other hand, as shown in FIGS. 1 (a) and 1 (b), the strain caused by the differential pressure between the two surfaces of the diaphragm 5 is located on the sensor chip outside by the strain separation zone 10 on the sensor chip 1. It is extremely difficult to reach the static pressure sensor. Therefore, in the static pressure sensor, the error due to the differential pressure becomes small, that is, it can be considered as a sensor having a unique error characteristic within the measurement range of the differential pressure. Thereby, the signal of the static pressure sensor can be used to correct the static pressure error signal component in the signal of the differential pressure sensor. Here, as a method of forming the strain isolation band 10, it is possible to provide it by etching or the like before the sensor chip 1 is bonded to the pedestal tube 3. Further, as described above, a large static pressure sensor signal can be obtained by selecting the shape of the pedestal tube, and it is possible to correct the static pressure error signal component with higher accuracy.
【００２５】[0025]
【発明の効果】以上説明したように本発明によれば、セ
ンサチップ上の差圧センサとそれに対応する静圧センサ
の間に歪み分離帯を設けたことにより、静圧センサ信号
中の差圧に基づく静圧誤差成分を除去し差圧センサ信号
を補正することで、半導体圧力センサの精度が向上す
る。As described above, according to the present invention, by providing the strain separation band between the differential pressure sensor on the sensor chip and the corresponding static pressure sensor, the differential pressure in the static pressure sensor signal is reduced. The accuracy of the semiconductor pressure sensor is improved by removing the static pressure error component based on and correcting the differential pressure sensor signal.
【図１】（ａ）は本発明の実施例を示すセンサチップを
台座管と反対側から見た平面図、（ｂ）は本発明の実施
例を示すセンサチップを差圧センサとそれに対応する静
圧センサを含む面でセンサチップに垂直に切った断面
図。FIG. 1A is a plan view of a sensor chip showing an embodiment of the present invention as seen from the side opposite to a pedestal tube, and FIG. 1B shows a sensor chip showing the embodiment of the present invention as a differential pressure sensor and corresponding thereto. Sectional drawing cut | disconnected perpendicularly to the sensor chip by the surface containing a static pressure sensor.
【図２】（ａ）は円形台座管の静圧印加時における圧縮
状態を示した断面図、（ｂ）は方形台座管の静圧印加時
における圧縮状態を示した断面図。2A is a sectional view showing a compressed state of a circular pedestal tube when static pressure is applied, and FIG. 2B is a sectional view showing a compressed state of a rectangular pedestal tube when static pressure is applied.
【図３】（ａ）は従来例を示すセンサチップを台座管と
反対側から見た平面図、（ｂ）は従来例を示すセンサチ
ップを差圧センサとそれに対応する静圧センサを含む面
でセンサチップに垂直に切った断面図。FIG. 3 (a) is a plan view of a sensor chip showing a conventional example as viewed from the side opposite to a pedestal tube, and FIG. 3 (b) is a plane showing a sensor chip showing the conventional example including a differential pressure sensor and a static pressure sensor corresponding thereto. Sectional view cut perpendicular to the sensor chip by.
１……センサチップ、２……方形空洞、３……台座管、
４……導圧路 ５……ダイヤフラム、６……垂直方向差圧センサ、７…
…平行方向差圧センサ ８……垂直方向静圧センサ、９……平行方向静圧セン
サ、１０……歪み分離帯 １１……円形台座管、１２……方形台座管、１０１……
ダイヤフラム １０２……センサチップ、１０３……円形空洞、１０４
……導圧路 １０５……台座管、１０６……半径方向差圧センサ １０７……接線方向差圧センサ、１０８……半径方向静
圧センサ １０９……接線方向静圧センサ1 ... Sensor chip, 2 ... Square cavity, 3 ... Pedestal tube,
4 ... Pressure guide path 5 ... Diaphragm, 6 ... Vertical differential pressure sensor, 7 ...
… Parallel direction differential pressure sensor 8 …… Vertical direction static pressure sensor, 9 …… Parallel direction static pressure sensor, 10 …… Strain separation zone 11 …… Circular pedestal tube, 12 …… Square pedestal tube, 101 ……
Diaphragm 102 ... Sensor chip, 103 ... Circular cavity, 104
...... Pressure guide path 105 ...... Pedestal tube, 106 ...... Radial direction differential pressure sensor 107 ...... Tangential direction differential pressure sensor, 108 …… Radial direction static pressure sensor 109 …… Tangential direction static pressure sensor
Claims (1)
面に空洞が形成された単結晶半導体材料からなる所定形
状の半導体基板と、 前記半導体基板の第１の面に結合され、かつ検出すべき
圧力を前記空洞に導入する導圧路を有する所定形状の台
座管と、 前記半導体基板の第２の面上であって、前記空洞周縁の
反対側近傍に形成された少なくとも１個の前記周縁に対
して垂直方向の差圧歪みセンサおよび少なくとも１個の
前記周縁に対して平行方向の差圧歪みセンサと、 前記半導体基板の第２の面上であって、前記台座管が接
合された部分の反対側に前記差圧歪みセンサと対応して
同様な配置に形成された少なくとも１個の前記周縁に対
して垂直方向の静圧歪みセンサおよび少なくとも１個の
前記周縁に対して平行方向の静圧歪みセンサと、 前記各差圧歪みセンサとそれに対応する前記各静圧歪み
センサの間の第２の面上にそれぞれ形成された歪み分離
帯とを備えて成ることを特徴とする半導体圧力センサ。1. A semiconductor substrate having first and second surfaces, the semiconductor substrate having a predetermined shape and made of a single crystal semiconductor material having a cavity formed in the first surface, and bonded to the first surface of the semiconductor substrate. And a pedestal tube of a predetermined shape having a pressure guiding path for introducing the pressure to be detected into the cavity, and at least formed on the second surface of the semiconductor substrate in the vicinity of the opposite side of the cavity peripheral edge. One differential pressure strain sensor perpendicular to the peripheral edge and at least one differential pressure strain sensor parallel to the peripheral edge; and on the second surface of the semiconductor substrate, the pedestal tube To the at least one peripheral edge formed in a similar arrangement corresponding to the differential pressure distortion sensor on the opposite side of the joined portion to the static pressure strain sensor and at least one peripheral edge. Parallel strain sensor Serial semiconductor pressure sensor characterized in that it comprises a second distortion separator respectively formed on the surface between each differential pressure strain looking sensor and the respective static pressure strain looking sensor corresponding thereto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23523391A JPH0572069A (en) | 1991-09-17 | 1991-09-17 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23523391A JPH0572069A (en) | 1991-09-17 | 1991-09-17 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0572069A true JPH0572069A (en) | 1993-03-23 |
Family
ID=16983055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23523391A Pending JPH0572069A (en) | 1991-09-17 | 1991-09-17 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0572069A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7210954B2 (en) | 2005-03-30 | 2007-05-01 | Honda Tsushin Kogyo Co., Ltd. | Electrical connector plug with lock screws |
| US7249972B2 (en) | 2005-03-23 | 2007-07-31 | Honda Tsushin Kogyo Co., Ltd. | Electrical connector receptacle with lock nut |
| JP2008107302A (en) * | 2006-10-27 | 2008-05-08 | Mitsumi Electric Co Ltd | Semiconductor pressure sensor and semiconductor pressure sensor device |
| US8042400B2 (en) | 2008-10-07 | 2011-10-25 | Yamatake Corporation | Pressure sensor |
| US8161820B2 (en) | 2008-10-07 | 2012-04-24 | Yamatake Corporation | Pressure sensor |
| US8522619B2 (en) | 2010-04-13 | 2013-09-03 | Azbil Corporation | Pressure sensor |
| JP6293236B1 (en) * | 2016-11-01 | 2018-03-14 | 三菱電機株式会社 | Semiconductor differential pressure sensor and manufacturing method thereof |
-
1991
- 1991-09-17 JP JP23523391A patent/JPH0572069A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7249972B2 (en) | 2005-03-23 | 2007-07-31 | Honda Tsushin Kogyo Co., Ltd. | Electrical connector receptacle with lock nut |
| US7210954B2 (en) | 2005-03-30 | 2007-05-01 | Honda Tsushin Kogyo Co., Ltd. | Electrical connector plug with lock screws |
| JP2008107302A (en) * | 2006-10-27 | 2008-05-08 | Mitsumi Electric Co Ltd | Semiconductor pressure sensor and semiconductor pressure sensor device |
| US8042400B2 (en) | 2008-10-07 | 2011-10-25 | Yamatake Corporation | Pressure sensor |
| US8161820B2 (en) | 2008-10-07 | 2012-04-24 | Yamatake Corporation | Pressure sensor |
| US8522619B2 (en) | 2010-04-13 | 2013-09-03 | Azbil Corporation | Pressure sensor |
| JP6293236B1 (en) * | 2016-11-01 | 2018-03-14 | 三菱電機株式会社 | Semiconductor differential pressure sensor and manufacturing method thereof |
| JP2018072229A (en) * | 2016-11-01 | 2018-05-10 | 三菱電機株式会社 | Semiconductor differential pressure sensor and method of manufacturing the same |
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