JPH056881A - Manufacture of semiconductor wafer - Google Patents
Manufacture of semiconductor waferInfo
- Publication number
- JPH056881A JPH056881A JP3185593A JP18559391A JPH056881A JP H056881 A JPH056881 A JP H056881A JP 3185593 A JP3185593 A JP 3185593A JP 18559391 A JP18559391 A JP 18559391A JP H056881 A JPH056881 A JP H056881A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- bevel
- polishing
- mirror
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、シリコン、サファイヤ
或いはヒ化ガリウム等からなる半導体ウェーハの製造す
るのに使用して最適な半導体ウェーハの製造装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optimum semiconductor wafer manufacturing apparatus used for manufacturing a semiconductor wafer made of silicon, sapphire, gallium arsenide or the like.
【０００２】[0002]
【従来の技術】ＬＳＩなどの大集積回路を製作する材料
である半導体ウェーハの製造方法として、出願人は、特
願昭５７−１６９１０５号として、図２に示すようなも
のを提案した。2. Description of the Related Art As a method of manufacturing a semiconductor wafer which is a material for manufacturing a large integrated circuit such as an LSI, the applicant has proposed a method as shown in FIG. 2 as Japanese Patent Application No. 57-169105.
【０００３】即ち、先ず同図（Ａ）に示すシリコン等の
単結晶半導体棒１から、ダイヤモンドカッタ等を用いて
同図（Ｂ）に示すスライス片１ａを切り出して薄板状の
半導体ウェーハ２を作り出す。次に、同図（Ｃ）に示す
ように、半導体ウェーハ２のエッジ部にベベル加工（面
取り）を施してベベル面２ｃを形成する。That is, first, the sliced piece 1a shown in FIG. 1B is cut out from the single crystal semiconductor rod 1 made of silicon or the like shown in FIG. 1A using a diamond cutter or the like to produce a thin semiconductor wafer 2. .. Next, as shown in FIG. 3C, the bevel surface 2c is formed by subjecting the edge portion of the semiconductor wafer 2 to bevel processing (chamfering).
【０００４】ここでベベル加工は、例えば図３に示すベ
ベル装置３を用いて行われる。つまり、このベベル装置
３は、ステンレス或いはニッケル等からなる台金４の上
面に両側を傾斜面とした凹部５を形成し、この凹部５の
表面にダイヤモンド６，６…をニッケルメッキして付着
させて、＃５０〜１００程度のメッシュの砥石面とした
ものである。そして、上記凹部５に回転する半導体ウェ
ーハ２のエッジ部を押し当てて研削することによりベベ
ル加工を施す。The bevel processing is performed by using the bevel device 3 shown in FIG. 3, for example. That is, in this bevel device 3, a concave portion 5 having inclined surfaces on both sides is formed on the upper surface of a base metal 4 made of stainless steel or nickel, and diamond 6, 6 ... Is nickel-plated and attached to the surface of the concave portion 5. The grindstone surface has a mesh size of about # 50 to 100. Then, the beveling process is performed by pressing the edge portion of the rotating semiconductor wafer 2 against the recess 5 and grinding it.
【０００５】そして、同図（Ｄ）に示すように、この半
導体ウェーハ２の表面２ａ及び裏面２ｂの両面を同時に
研磨するラッピング加工を施した後、同図（Ｅ）に示す
如く、半導体ウェーハ２の全外周面、即ち表面２ａ，裏
面２ｂ及びベベル面２ｃの全ての面を酢酸とフッ酸の混
液等によってエッチングし、これによってカッタ跡等を
除去して平滑面となす。Then, as shown in FIG. 2D, after lapping is performed to simultaneously polish both the front surface 2a and the back surface 2b of the semiconductor wafer 2, as shown in FIG. All outer peripheral surfaces, that is, all of the front surface 2a, the back surface 2b, and the bevel surface 2c are etched with a mixed solution of acetic acid and hydrofluoric acid or the like, thereby removing the traces of the cutter or the like to form a smooth surface.
【０００６】しかる後、同図（Ｆ）に示すように、少な
くとも表面２ａとベベル面２ｃとを、更には必要に応じ
て裏面２ｂをも、研磨布を用いて鏡面に研磨する鏡面仕
上げを施し、これをその後のデバイスプロセスに供する
半導体ウェーハ７とするようにしたものである。Thereafter, as shown in FIG. 1F, at least the front surface 2a and the bevel surface 2c, and if necessary, the back surface 2b are also mirror-finished by polishing the mirror surface with a polishing cloth. The semiconductor wafer 7 is used for the subsequent device process.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記の
ように半導体ウェーハのエッジ部に形成されたベベル面
を研磨布を用いて鏡面仕上げしようとしても、この鏡面
仕上げを行うための装置が存在していないのが現状であ
る。However, even if the bevel surface formed on the edge portion of the semiconductor wafer is to be mirror-finished with a polishing cloth as described above, there is an apparatus for performing this mirror-finishing. The current situation is that there are none.
【０００８】本発明は上記に鑑み、半導体ウェハのエッ
ジ部に形成されたベベル面を容易かつ確実に鏡面仕上げ
することができるようにした半導体ウェーハの製造装置
を提供することを目的とする。In view of the above, it is an object of the present invention to provide a semiconductor wafer manufacturing apparatus capable of easily and reliably mirror-finishing the bevel surface formed on the edge portion of the semiconductor wafer.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明に係る半導体ウェーハの製造装置は、半導体
ウェーハのエッジ部に形成されたベベル面を鏡面仕上げ
する半導体ウェーハの製造装置であって、半導体ウェー
ハを水平軸に対して交叉した状態に保持して回転させる
回転装置と、この回転装置に保持された半導体ウェーハ
のベベル面に接触するよう配置され、このベベル面との
接触部表面に該ベベル面を研磨する研磨布を貼設した研
磨装置とを備えたものである。To achieve the above object, a semiconductor wafer manufacturing apparatus according to the present invention is a semiconductor wafer manufacturing apparatus for mirror-finishing a bevel surface formed on an edge portion of a semiconductor wafer. , A rotating device for holding and rotating the semiconductor wafer in a state of being crossed with respect to the horizontal axis, and arranged so as to come into contact with the bevel surface of the semiconductor wafer held by this rotating device. And a polishing device to which a polishing cloth for polishing the bevel surface is attached.
【００１０】[0010]
【作用】上記のように構成した本発明によれば、回転装
置で半導体ウェーハを水平軸に対して交叉した状態で保
持し、この状態で回転装置を介して半導体ウェーハを回
転させることにより、ベベル面に接触するよう研磨装置
の表面に貼設された研磨布でベベル面を研磨してこの鏡
面仕上げを行うことができる。According to the present invention constructed as described above, the beveling is performed by holding the semiconductor wafer in a state of intersecting the horizontal axis with the rotating device and rotating the semiconductor wafer through the rotating device in this state. This mirror finishing can be performed by polishing the bevel surface with a polishing cloth attached to the surface of the polishing device so as to come into contact with the surface.
【００１１】[0011]
【実施例】以下、本発明の一実施例を図１を参照して説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
【００１２】図１は、本発明に係る半導体ウェーハの製
造装置の側面図を示すもので、この製造装置は、横置き
に配置されたモータ８の水平方向に延びる回転軸９の先
端にウェーハ固定治具１０を連接した回転装置１１と、
この回転装置１１の近傍に配置され、研磨用台金１２の
表面に凹部１３を設けるとともに、この凹部１３内の表
面に研磨布１４を貼設した研磨装置１５とから主に構成
されている。FIG. 1 is a side view of a semiconductor wafer manufacturing apparatus according to the present invention. This manufacturing apparatus fixes a wafer on the tip of a horizontally extending rotary shaft 9 of a motor 8 arranged horizontally. A rotation device 11 connected to the jig 10,
It is arranged in the vicinity of the rotating device 11, and mainly comprises a polishing device 15 in which a recess 13 is provided on the surface of the polishing base 12 and a polishing cloth 14 is attached to the surface of the recess 13.
【００１３】前記ウェーハ固定治具１０は、半導体ウェ
ーハ２のほぼ中央部を前後方向から挟持してこれを保持
するものであり、これにより半導体ウェーハ２は、水平
軸と直角に交叉する鉛直方向に配置された状態で保持さ
れることになる。The wafer fixing jig 10 sandwiches the substantially central portion of the semiconductor wafer 2 from the front-rear direction and holds the same, so that the semiconductor wafer 2 is held in the vertical direction intersecting the horizontal axis at right angles. It will be held in the arranged state.
【００１４】また、前記研磨布１４は、ベベル面２ｃを
研磨して鏡面仕上げするためのものであり、固定治具１
０で半導体ウェーハ２を保持した際、このエッジ部に形
成されたベベル面２ｃとこの研磨布１４とが接触する位
置に、即ち半導体ウェーハ２のエッジ部が凹部１３内に
入り込んで、この凹部１３の表面に貼設された研磨布１
４とベベル面２ｃとが接触する位置に配置されている。The polishing cloth 14 is for polishing the bevel surface 2c to give a mirror finish, and the fixing jig 1
When the semiconductor wafer 2 is held at 0, the bevel surface 2c formed on the edge portion and the polishing cloth 14 come into contact with each other, that is, the edge portion of the semiconductor wafer 2 enters the concave portion 13 and the concave portion 13 Cloth attached to the surface of
4 and the bevel surface 2c are in contact with each other.
【００１５】これにより、回転装置１１のウェーハ固定
治具１０で半導体ウェーハ２を鉛直状態に保持し、この
状態でモータ８を介して半導体ウェーハ２を回転させる
ことにより、この半導体ウェーハ２のベベル面２ｃに接
触するよう研磨装置１５の表面に貼設された研磨布１４
で該ベベル面２ｃを研磨してこの鏡面仕上げを行うこと
ができるようなされている。As a result, the semiconductor wafer 2 is held vertically by the wafer fixing jig 10 of the rotating device 11, and the semiconductor wafer 2 is rotated through the motor 8 in this state, whereby the bevel surface of the semiconductor wafer 2 is rotated. The polishing cloth 14 attached to the surface of the polishing device 15 so as to come into contact with 2c.
The bevel surface 2c can be polished to achieve this mirror finish.
【００１６】このように、モータ８を駆動せしめて半導
体ウェーハ２のベベル面２ｃを研磨布１４で鏡面仕上げ
することにより、化学エッチング即ちケミカルポリッシ
ングしてもなお小さな凹凸及び粉砕層が残るエッジ部の
ベベル面２ｃを平滑な鏡面となすことができる。In this way, by driving the motor 8 and mirror-finishing the bevel surface 2c of the semiconductor wafer 2 with the polishing cloth 14, even if chemical etching, that is, chemical polishing, small irregularities and a crushed layer remain on the edge portion. The bevel surface 2c can be a smooth mirror surface.
【００１７】而して、図２（Ａ）に示すシリコン等の単
結晶半導体棒１から、ダイヤモンドカッタ等を用いて同
図（Ｂ）に示すスライス片１ａを切り出して薄板状の半
導体ウェーハ２を作り出し、同図（Ｃ）に示すように、
半導体ウェーハ２のエッジ部に例えば図３に示すベベル
装置３を用いてベベル加工（面取り）を施すことによ
り、ベベル面２ｃを形成する。そして、同図（Ｄ）に示
すように、この半導体ウェーハ２の表面２ａ及び裏面２
ｂの両面を同時に研磨するラッピング加工を施した後、
同図（Ｅ）に示す如く、半導体ウェーハ２の全外周面、
即ち表面２ａ，裏面２ｂ及びベベル面２ｃの全ての面を
酢酸とフッ酸の混液等によってエッチングし、これによ
ってカッタ跡等を除去して平滑面となす。Then, the sliced piece 1a shown in FIG. 2B is cut out from the single crystal semiconductor rod 1 made of silicon or the like shown in FIG. 2A by using a diamond cutter or the like to obtain a thin semiconductor wafer 2. Produced, as shown in FIG.
The bevel surface 2c is formed by subjecting the edge portion of the semiconductor wafer 2 to bevel processing (chamfering) using the bevel device 3 shown in FIG. 3, for example. Then, as shown in FIG. 3D, the front surface 2 a and the back surface 2 of the semiconductor wafer 2 are
After the lapping process for polishing both sides of b at the same time,
As shown in FIG. 6E, the entire outer peripheral surface of the semiconductor wafer 2,
That is, all of the front surface 2a, the back surface 2b, and the bevel surface 2c are etched with a mixed solution of acetic acid and hydrofluoric acid or the like, thereby removing cutter marks and the like to form a smooth surface.
【００１８】しかる後、同図（Ｆ）に示すように、少な
くとも表面２ａとベベル面２ｃとを、更には必要に応じ
て裏面２ｂをも、研磨布を用いて鏡面に研磨する鏡面仕
上げを施して、これをその後のデバイスプロセスに供す
る半導体ウェハ７とするのであるが、この時、半導体ウ
ェーハ２のエッジ部に形成されたベベル面２ｃの鏡面仕
上げを上記のように構成した半導体ウェーハ製造装置を
用いて行うのである。Thereafter, as shown in FIG. 1F, at least the front surface 2a and the bevel surface 2c, and if necessary, the back surface 2b are also mirror-finished by polishing the mirror surface with a polishing cloth. Then, this is used as the semiconductor wafer 7 to be subjected to the subsequent device process. At this time, a semiconductor wafer manufacturing apparatus having the bevel surface 2c formed at the edge portion of the semiconductor wafer 2 with a mirror finish as described above is used. It is done by using.
【００１９】このように鏡面仕上げしたベベル面２ｃに
は、チッ化シリコン或いはポリシリコンの蒸着時にデン
ドライト結晶が発生しないことが実験によって確かめら
れている。It has been confirmed by experiments that dendrite crystals do not occur on the bevel surface 2c thus mirror-finished during the deposition of silicon nitride or polysilicon.
【００２０】なお、上記実地例においては、半導体ウェ
ーハ２を鉛直状態に保持するようにした例を示している
が、これを傾斜した状態で保持するよう、即ち図１にお
けるモータ８を鉛直方向に９０度未満回転させた状態で
配置するようにすることもできる。In the above practical example, the semiconductor wafer 2 is held in the vertical state, but it is held in an inclined state, that is, the motor 8 in FIG. It is also possible to arrange them in a state of being rotated by less than 90 degrees.
【００２１】また、凹部１３を設けることなく、台金１
２の表面の半導体ウェーハ２のエッジ部に形成されたベ
ベル面２ｃとの接触位置に研磨布１４を貼設するように
しても良いことは勿論である。Further, the base metal 1 without the recess 13 is provided.
It goes without saying that the polishing cloth 14 may be attached to the position of contact with the bevel surface 2c formed on the edge portion of the semiconductor wafer 2 on the surface of 2.
【００２２】[0022]
【発明の効果】本発明は、上記のような構成であるの
で、ベベル面を鏡面仕上げすることにより、ウェーハ製
造時及びこのウェーハからデバイスを製作する際に、エ
ッジ部にチップや欠けが生じることなく、且つ窒化シリ
コン、ポリシリコンの蒸着時にベベル面にデンドライト
結晶が成長しにくく、しかもその後のデバイスプロセス
において微粒子が発生せず高デバイス歩留を得ることが
できるようにした半導体ウェーハのベベル面における鏡
面仕上げを、容易かつ確実に行って、半導体ウェーハを
製造することができる。EFFECTS OF THE INVENTION Since the present invention has the above-described structure, the beveled surface is mirror-finished, so that chips and chips are generated at the edges during wafer production and during device production from this wafer. In the bevel surface of the semiconductor wafer, which does not easily grow dendrite crystals on the bevel surface during the vapor deposition of silicon nitride and polysilicon, and does not generate fine particles in the subsequent device process. A semiconductor wafer can be manufactured by performing mirror-like finishing easily and surely.
【図１】本発明の一実施例を示す側面図。FIG. 1 is a side view showing an embodiment of the present invention.
【図２】本発明に供される半導体ウェーハの製造を工程
順に示す図。2A to 2D are views showing a process of manufacturing a semiconductor wafer used in the present invention in order of steps.
【図３】ベベル装置の側面図。FIG. 3 is a side view of the bevel device.
２ 半導体ウェーハ ２ｃ 同ベベル面 ８ モータ １０ ウェーハ固定治具 １１ 回転装置 １４ 研磨布 １５ 研磨装置 2 Semiconductor wafer 2c Same bevel surface 8 Motor 10 Wafer fixing jig 11 Rotating device 14 Polishing cloth 15 Polishing device
Claims (1)
ベル面を鏡面仕上げする半導体ウェーハの製造装置であ
って、半導体ウェーハを水平軸に対して交叉した状態に
保持して回転させる回転装置と、この回転装置に保持さ
れた半導体ウェーハのベベル面に接触するよう配置さ
れ、このベベル面との接触部表面に該ベベル面を研磨す
る研磨布を貼設した研磨装置とを備えたことを特徴とす
る半導体ウェーハの製造装置。Claim: What is claimed is: 1. A semiconductor wafer manufacturing apparatus for mirror-finishing a bevel surface formed on an edge portion of a semiconductor wafer, wherein the semiconductor wafer is held in a state of intersecting with a horizontal axis. A rotating device that rotates and a polishing device that is arranged so as to contact the bevel surface of the semiconductor wafer held by the rotating device and has a polishing cloth attached to the contact surface of the bevel surface for polishing the bevel surface. An apparatus for manufacturing a semiconductor wafer, which is characterized by being provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3185593A JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3185593A JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57169105A Division JPS5958827A (en) | 1982-09-28 | 1982-09-28 | Semiconductor wafer and method and apparatus for manufacturing semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH056881A true JPH056881A (en) | 1993-01-14 |
| JP2642538B2 JP2642538B2 (en) | 1997-08-20 |
Family
ID=16173519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3185593A Expired - Lifetime JP2642538B2 (en) | 1991-06-29 | 1991-06-29 | Semiconductor wafer manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2642538B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030043697A (en) * | 2001-11-26 | 2003-06-02 | 가부시끼가이샤 도시바 | Method of manufacturing semiconductor device and polishing device |
| US6685539B1 (en) | 1999-08-24 | 2004-02-03 | Ricoh Company, Ltd. | Processing tool, method of producing tool, processing method and processing apparatus |
| US6722964B2 (en) | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
| US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632267A (en) * | 1979-08-15 | 1981-04-01 | Sekisui Plastics | Vessel for transporting vegetable |
-
1991
- 1991-06-29 JP JP3185593A patent/JP2642538B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632267A (en) * | 1979-08-15 | 1981-04-01 | Sekisui Plastics | Vessel for transporting vegetable |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6685539B1 (en) | 1999-08-24 | 2004-02-03 | Ricoh Company, Ltd. | Processing tool, method of producing tool, processing method and processing apparatus |
| US6722964B2 (en) | 2000-04-04 | 2004-04-20 | Ebara Corporation | Polishing apparatus and method |
| US6935932B2 (en) | 2000-04-04 | 2005-08-30 | Ebara Corporation | Polishing apparatus and method |
| US7108589B2 (en) | 2000-04-04 | 2006-09-19 | Ebara Corporation | Polishing apparatus and method |
| KR20030043697A (en) * | 2001-11-26 | 2003-06-02 | 가부시끼가이샤 도시바 | Method of manufacturing semiconductor device and polishing device |
| US7559825B2 (en) | 2006-12-21 | 2009-07-14 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2642538B2 (en) | 1997-08-20 |
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