JPH0565662A - Production of thin film forming substrate - Google Patents

Production of thin film forming substrate

Info

Publication number
JPH0565662A
JPH0565662A JP20640791A JP20640791A JPH0565662A JP H0565662 A JPH0565662 A JP H0565662A JP 20640791 A JP20640791 A JP 20640791A JP 20640791 A JP20640791 A JP 20640791A JP H0565662 A JPH0565662 A JP H0565662A
Authority
JP
Japan
Prior art keywords
palladium
substrate
thin film
acetate
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20640791A
Other languages
Japanese (ja)
Inventor
Toshio Hidaka
敏雄 日高
Takamasa Kawakami
殷正 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP20640791A priority Critical patent/JPH0565662A/en
Priority to EP92106064A priority patent/EP0508399A2/en
Publication of JPH0565662A publication Critical patent/JPH0565662A/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

PURPOSE:To form a thin film of copper or silver on the surface of a substrate without using a large-scale vacuum vessel by allowing the substrate and copper acetate or silver acetate to coexist, depositing or incorporating a trace of palladium in the materials and thermally decomposing the materials at a specified temp. under reduced pressure. CONSTITUTION:A substrate such as the laminate of thermoplastic resin and thermosetting resin or the substrate of various ceramics, glass and metals and the powder of copper acetate or silver acetate are introduced into the same vessel. In this case, palladium is deposited on the substrate surface at 10<-7> to 10<-1>g/cm<2>, or 100-4000ppm of palladium is preferably incorporated into the copper acetate or silver acetate. The vessel is evacuated to <=30Torr and heated by a heating means, e.g. radiant heating, to <=400 deg.C which is lower than the deterioration temp. of the substrate. The vessel is held as such for about one hour.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、酢酸銅又は酢酸銀を熱
分解して薄膜が形成された基材を製造する方法であり、
例えば、抵抗体、電極、センサー、磁気媒体などの各種
エレクトロニクスデバイスなどの用途において好適に使
用されるものである。TECHNICAL FIELD The present invention relates to a method for producing a substrate having a thin film formed by thermally decomposing copper acetate or silver acetate,
For example, it is preferably used in applications such as various electronic devices such as resistors, electrodes, sensors and magnetic media.

【０００２】[0002]

【従来の技術】各種エレクトロニクスデバイスにおいて
様々な金属またはその酸化物などの薄膜が使用されてい
る。これらの薄膜の形成法としては、真空蒸着法、イオ
ンスパッタリング、イオンプレーティング法などの蒸着
法、有機金属化合物を用いた化学的気相成長法や液相成
長法、または金属の無機化合物を用いた固相反応法など
が知られている。2. Description of the Related Art Thin films of various metals or oxides thereof are used in various electronic devices. These thin films can be formed by vacuum vapor deposition, ion sputtering, vapor deposition such as ion plating, chemical vapor deposition or liquid growth using an organometallic compound, or an inorganic metal compound. A known solid-phase reaction method is known.

【０００３】しかし、高度の真空系を使用する方法の場
合、装置、排気処理などが大規模で高価となったり、原
料として用いる化合物の合成が困難で高価であったり、
有毒であるなどの取扱いや経済性などに課題があった。
また、真空系を必要としない液相或いは固相法では、原
料と使用可能な化合物が制約され、また、熱処理温度と
して通常、 400℃程度、 600℃を越える場合も多々あ
り、金属、セラミックス、ガラスなどの場合には適用可
能であったが、これより通常、耐熱性の低い基材には適
用できないものであった。However, in the case of the method using a high vacuum system, the equipment and exhaust treatment are large-scaled and expensive, or the compound used as a raw material is difficult and expensive to synthesize.
There were problems in handling and economics such as being toxic.
Further, in the liquid phase or solid phase method that does not require a vacuum system, the raw materials and usable compounds are limited, and the heat treatment temperature is usually about 400 ° C. and often exceeds 600 ° C. Although it was applicable to glass and the like, it was usually not applicable to substrates having low heat resistance.

【０００４】[0004]

【発明が解決しようとする課題】そこで、より低温で、
より強固に密着した各種金属或いはその酸化物などの薄
膜を形成することが可能で、原料、取扱いなどが容易な
方法が望まれていた。本発明者らは、容易に入手可能な
各種金属化合物について、その熱分解特性を検討した。
その結果、酢酸銅又は酢酸銀を減圧下に熱分解すると薄
膜が形成される場合があること、さらに、パラジウムが
この熱分解を促進する効果があることを見出し、これに
基づいて本発明に至った。Therefore, at a lower temperature,
There has been a demand for a method that can form a thin film of various metals or their oxides that are more firmly adhered, and that can be easily used as a raw material and handled. The present inventors examined the thermal decomposition characteristics of various metal compounds that are easily available.
As a result, it was found that a thin film may be formed by thermally decomposing copper acetate or silver acetate under reduced pressure, and that palladium has an effect of promoting this thermal decomposition, and the present invention was based on this. It was

【０００５】[0005]

【課題を解決するための手段】すなわち、本発明は、基
材と酢酸銅又は酢酸銀とを共存させ、減圧下に 400℃以
下で熱分解することを特徴とする薄膜形成基材の製造法
であり、該基材が、表面にパラジウムを付着させてなる
ものであること、該基材表面に付着させたパラジウムの
量が10-7〜10-1 g/cm2の範囲であることであり、また、
該酢酸銅又は酢酸銀が、パラジウムを含有或いは付着さ
せてなるものであること、該パラジウムの含有或いは付
着重量が、該酢酸銅又は酢酸銀に対して 100〜4,000ppm
の範囲である薄膜形成基材の製造法である。[Means for Solving the Problems] That is, the present invention is a method for producing a thin film-forming substrate, characterized in that the substrate and copper acetate or silver acetate are coexistent and pyrolyzed under reduced pressure at 400 ° C. or less. And that the base material is one in which palladium is attached to the surface, and the amount of palladium attached to the base material surface is in the range of 10 -7 to 10 -1 g / cm 2. Yes, again
The copper acetate or silver acetate contains or adheres to palladium, and the palladium content or adhesion weight is 100 to 4,000 ppm relative to the copper acetate or silver acetate.
The manufacturing method of the thin film-forming base material is in the range of.

【０００６】以下、本発明について説明する。本発明で
は、酢酸銅又は酢酸銀をそれぞれ単独で或いは混合す
る。酢酸銅及び酢酸銀は、単独で用いた場合、薄膜が全
く形成しないか、比較的高温側を必要とする。しかし、
パラジウムを共存させることにより、より低温で熱分解
を可能とし、より実用性のある厚さの薄膜を形成可能と
する。このパラジウムは、通常、パラジウム塩の形で使
用する。パラジウム塩としては、塩化パラジウム、酢酸
パラジウム、硝酸パラジウム、硫酸パラジウムなどが挙
げられ、ハロゲン、硫黄、その他の不純物を残留させな
い面からは酢酸パラジウムなどが好ましい。尚、銅や銀
以外の金属の塩、例えば、蟻酸塩、有機金属化合物を熱
分解時に併用すること、或いはこれらの方法と本発明の
方法とを順次繰り返して、異種の金属或いはその酸化物
などが層状に堆積した薄膜とすることもできる。The present invention will be described below. In the present invention, copper acetate or silver acetate is used alone or in combination. Copper acetate and silver acetate, when used alone, do not form a thin film at all or require a relatively high temperature side. But,
Coexistence of palladium enables thermal decomposition at a lower temperature and enables formation of a thin film having a more practical thickness. This palladium is usually used in the form of a palladium salt. Examples of the palladium salt include palladium chloride, palladium acetate, palladium nitrate, palladium sulfate and the like, and palladium acetate and the like are preferable from the viewpoint of not leaving halogen, sulfur and other impurities. Incidentally, a salt of a metal other than copper or silver, for example, a formate salt or an organometallic compound is used in combination during the thermal decomposition, or these methods and the method of the present invention are sequentially repeated to dissimilar metals or oxides thereof. It is also possible to use a thin film in which is deposited in layers.

【０００７】パラジウムを共存させる方法には、. 酢
酸銅又は酢酸銀の、通常、微粉末にパラジウム塩を添加
し、機械的に混合して分散させる方法または酢酸銅又は
酢酸銀の製造工程中にパラジウム塩を添加して結晶中に
含有させる方法と. 基材表面にパラジウムを付着させ
る方法；さらに両者を併用する方法が挙げられる。より
少量のパラジウムでより良好な熱分解特性を得るために
は、酢酸銅又は酢酸銀の結晶中にパラジウムが含有され
たパラジウム含有塩が好ましく、好適にはパラジウムを
重量で 100〜4,000 ppm の範囲で含む結晶が好ましい。
また、の場合、基材表面に、通常、パラジウム塩の水
や有機溶剤溶液を塗布してパラジウムを10-7〜10-1g/cm
2 以上付着させたものとする。The method of making palladium coexist is as follows. Usually, a fine powder of copper acetate or silver acetate is added with a palladium salt and mechanically mixed and dispersed, or during the production process of copper acetate or silver acetate. A method in which a palladium salt is added and contained in the crystal, and a method in which palladium is attached to the surface of the base material; and a method in which both are used in combination. In order to obtain better thermal decomposition characteristics with a smaller amount of palladium, a palladium-containing salt in which palladium is contained in crystals of copper acetate or silver acetate is preferable, and palladium is preferably in the range of 100 to 4,000 ppm by weight. The crystal containing in is preferable.
In the case of, the surface of the substrate is usually coated with palladium salt water or an organic solvent solution to add palladium at 10 -7 to 10 -1 g / cm 3.
Two or more must be attached.

【０００８】本発明の基材とは、繊維強化或いは未強化
の耐熱性の熱可塑性樹脂、超耐熱性の熱可塑性樹脂、熱
硬化性樹脂を用いて製造した成形品、フィルム、シー
ト、積層板類などの樹脂製物品、各種セラミックス、ガ
ラス、金属などである。The substrate of the present invention means a molded product, a film, a sheet or a laminated plate produced by using a fiber-reinforced or unreinforced heat-resistant thermoplastic resin, a super heat-resistant thermoplastic resin, or a thermosetting resin. It is a resin article such as a class, various ceramics, glass and metal.

【０００９】本発明の熱分解を行うための加熱は、遠赤
外線、赤外線、電子線、マイクロ波などの放射加熱、電
気炉、オーブン、オイル加熱、加圧蒸気加熱、ニクロム
線、その他の加熱盤を用いた加熱手段が挙げられる。本
発明では、昇温時並びに所定温度保持時の場所による温
度のバラツキが少ないものが好ましく、バッチ式又は被
物品の導入部、メッキ部、取り出し部を持った半連続式
又は連続式加熱機などが挙げられる。また、昇温速度を
速くし、薄膜の形成時間を短くし、さらに場所による昇
温速度のバラツキを小さくして、良好な薄膜を得るため
に、基材と金属の酢酸塩、必要に応じてさらにパラジウ
ムを予め 150℃以下の温度に予熱し、これを所定温度に
設定された加熱部として熱容量のある熱盤を持った加熱
機器に投入する方法、赤外線、特に遠赤外線セラミック
ヒーターなどを用いて加熱する方法、さらに両者を組み
合わせることが好適な方法として例示される。The heating for carrying out the thermal decomposition of the present invention includes radiant heating of far infrared rays, infrared rays, electron beams, microwaves, electric furnaces, ovens, oil heating, pressurized steam heating, nichrome wire, and other heating plates. The heating means using is mentioned. In the present invention, it is preferable that there is little variation in temperature depending on the place where the temperature is raised and when the temperature is maintained at a predetermined temperature, such as a batch type or semi-continuous type or continuous type heating device having an introduction part, a plating part, and a take-out part Is mentioned. In addition, in order to obtain a good thin film by increasing the temperature rising rate, shortening the thin film formation time, and reducing the variation in the temperature rising rate depending on the location, the base material and metal acetate, and if necessary, Furthermore, preheat the palladium to a temperature of 150 ° C or lower beforehand, and put it in a heating device with a heating plate with a heat capacity as the heating unit set to a predetermined temperature, using infrared rays, especially far infrared ceramic heaters. A heating method and a combination of both methods are exemplified as preferable methods.

【００１０】加熱は、実質的に減圧下で、好ましくは 3
0Torr 以下、特に 5Torr以下の減圧下で 400℃以下で且
つ該基材の変形劣化温度以下の範囲の所定温度、好まし
くは200〜300 ℃の範囲でかつ該基材の変形劣化温度以
下の範囲の所定温度である。通常、基材と酢酸銅又は酢
酸銀とは同時に加熱するが、別々に加熱することもでき
るものであり、例えば、基材を予め所定温度に加熱し、
そこに酢酸銅又は酢酸銀を導入して昇温してもよい。The heating is substantially under reduced pressure, preferably 3
Under a reduced pressure of 0 Torr or less, especially 5 Torr or less, a predetermined temperature in the range of 400 ° C. or less and the deformation deterioration temperature of the substrate or less, preferably in the range of 200 to 300 ° C. and the deformation deterioration temperature of the substrate or less. It is a predetermined temperature. Usually, the base material and copper acetate or silver acetate are heated at the same time, but it is also possible to heat separately, for example, the base material is preheated to a predetermined temperature,
Copper acetate or silver acetate may be introduced therein to raise the temperature.

【００１１】以上の方法で加熱処理した後、室温に冷却
して、所望部に薄膜が形成された基材を得る。取り出さ
れた薄膜形成基材は、そのまま或いはそのままでは表面
活性が極めて高いために吸着や酸化が容易におこる場合
には適当な防錆処理または用途によってはメッキ、その
他の方法によって後加工などして製品或いは実用に供す
る。After the heat treatment by the above method, the substrate is cooled to room temperature to obtain a substrate having a thin film formed on a desired portion. The thin film-forming substrate that has been taken out has an extremely high surface activity as it is or as it is, and if it is easily adsorbed or oxidized, it may be subjected to appropriate rust-preventing treatment or plating depending on the application, and post-processing by other methods. Use for products or practical use.

【００１２】[0012]

【実施例】以下, 実施例などによって本発明をさらに具
体的に説明する。 実施例１ 縦横各 100mm、高さ 10mm 、厚さ 1mmのアルミニウム製
の試料皿(=試料皿) 、縦横各 100mm、肉厚1mmのアルミ
ニウム板に片面にポリイミドフィルムを固定したもの(=
基板11) および縦横各 100mm、肉厚 1mmのパイレックス
ガラス板(=基板21) を準備した。上記の試料皿の底に、
無水酢酸銅粉末 5g を均一に敷き、基板11をポリイミド
フィルム側を内面として用い蓋をした後、アルミニウム
箔で全体を包んだ。EXAMPLES The present invention will be described in more detail with reference to the following examples. Example 1 Aluminum sample plate (= sample plate) made of aluminum having a length and width of 100 mm, a height of 10 mm, and a thickness of 1 mm, an aluminum plate having a length and width of 100 mm, and a wall thickness of 1 mm, and a polyimide film fixed on one side (=
A substrate 11) and a Pyrex glass plate (= substrate 21) having a length and width of 100 mm and a wall thickness of 1 mm were prepared. At the bottom of the sample dish above,
5 g of anhydrous copper acetate powder was evenly spread, and the substrate 11 was covered with a polyimide film side as an inner surface, and then the whole was wrapped with an aluminum foil.

【００１３】これを減圧乾燥機中に入れ、 1mmHgの減圧
下、温度 290℃で 1時間保持した後、徐冷して取り出し
た。試料皿の蓋とした基板11の内側面にはＸ線回折の結
果、銅の薄膜が生成したものであることが確認された。
また、試料皿には、金属銅粉 1.2g が生成したものであ
った。さらに、この銅粉を除去した試料皿の底表面には
均一な銅膜が生成していた。This was placed in a vacuum dryer, kept at a temperature of 290 ° C. for 1 hour under a reduced pressure of 1 mmHg, then slowly cooled and taken out. As a result of X-ray diffraction, it was confirmed that a copper thin film was formed on the inner surface of the substrate 11 which was the lid of the sample dish.
Also, 1.2 g of metallic copper powder was produced in the sample dish. Furthermore, a uniform copper film was formed on the bottom surface of the sample dish from which the copper powder had been removed.

【００１４】実施例２ 実施例１において、無水酢酸銅粉末に代えて、無水酢酸
銀粉末 5g を用い、熱分解温度を 260℃とする他は同様
としたところ、試料皿の蓋とした基板11の内側面にはＸ
線回折の結果、銀の薄膜が生成したものであることが確
認された。 実施例３ 蓋としてパイレックスガラス板 (基板21) を用い、その
片面に、濃度 0.1重量％の酢酸パラジウムのアセトン溶
液を用い、幅約 5mm、 5mm間隔でコーティングし、乾燥
して、基板22を得た。この基板22のコーティングした表
面にはパラジウムが約 4.7×10-4g/cm2 付着したもので
あった。上記で得た基板22を使用し、温度を 240℃とす
る他は実施例１と同様とした。この結果、基板22のパラ
ジウムをコーティングした部分には、厚さ 0.1μｍの銅
膜が形成された。Example 2 The same procedure as in Example 1 was carried out except that 5 g of anhydrous silver acetate powder was used in place of the anhydrous copper acetate powder and the thermal decomposition temperature was 260 ° C. X on the inner surface of
As a result of line diffraction, it was confirmed that a silver thin film was formed. Example 3 A Pyrex glass plate (substrate 21) was used as a lid, and one side thereof was coated with an acetone solution of palladium acetate having a concentration of 0.1 wt% at a width of about 5 mm and at intervals of 5 mm, and dried to obtain a substrate 22. It was About 4.7 × 10 −4 g / cm 2 of palladium was attached to the coated surface of the substrate 22. The same procedure as in Example 1 was performed except that the substrate 22 obtained above was used and the temperature was 240 ° C. As a result, a copper film having a thickness of 0.1 μm was formed on the palladium-coated portion of the substrate 22.

【００１５】実施例４ 蓋としてパイレックスガラス板 (基板21) を用い、無水
酢酸銅粉末に代えて、無水酢酸銅粉末 4g と酢酸コバル
ト粉末 4g との混合物を用い、さらに熱分解を280℃で
1時間、さらに 300℃で 1時間保持する他は実施例１と
同様にした。この結果、基板21には銅とコバルトとが層
状に堆積した膜が形成された。Example 4 A Pyrex glass plate (substrate 21) was used as a lid, a mixture of 4 g of anhydrous copper acetate powder and 4 g of cobalt acetate powder was used in place of the anhydrous copper acetate powder, and further pyrolysis at 280 ° C.
The same procedure as in Example 1 was carried out except that the temperature was maintained for 1 hour and then at 300 ° C. for 1 hour. As a result, a film in which copper and cobalt were deposited in layers was formed on the substrate 21.

【００１６】[0016]

【発明の効果】以上の如くである本発明の薄膜形成基材
の製造法によれば、大規模な真空系、装置類を必要とせ
ず、取り扱いやすく安価で入手容易な原料を用いて、特
にパラジウムを併用することにより実用上充分に低い温
度領域において銅又は銀を用いた薄膜を形成することが
可能である。この結果、ポリイミドなどにも薄膜が容易
に形成可能となる。また、ガラス、セラミックス、金属
基板等にもより低温で良好な薄膜を形成可能とするもの
であり、実用性の高い新規で有意義な技術であることは
明白である。According to the method for producing a thin film-forming substrate of the present invention as described above, a large-scale vacuum system and equipment are not required, and a raw material which is easy to handle, inexpensive and easy to obtain is used. By using palladium in combination, it is possible to form a thin film using copper or silver in a practically sufficiently low temperature range. As a result, a thin film can be easily formed on polyimide or the like. In addition, it is possible to form a good thin film on glass, ceramics, metal substrates, etc. at a lower temperature, and it is obvious that this is a new and meaningful technique with high practicality.

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 基材と酢酸銅又は酢酸銀とを共存させ、
減圧下に 400℃以下で熱分解することを特徴とする薄膜
形成基材の製造法1. A base material and copper acetate or silver acetate are allowed to coexist,
A method for producing a thin film-forming substrate characterized by pyrolyzing at 400 ° C or less under reduced pressure 【請求項２】 該基材が、表面にパラジウムを付着させ
てなるものである請求項１記載の薄膜形形成基材の製造
法2. The method for producing a thin film form forming base material according to claim 1, wherein the base material has palladium adhered to the surface thereof. 【請求項３】 該基材表面に付着させたパラジウムの量
が10-7〜10-1 g/cm2の範囲である請求項２記載の薄膜形
成基材の製造法3. The method for producing a thin film-forming substrate according to claim 2 , wherein the amount of palladium deposited on the surface of the substrate is in the range of 10 −7 to 10 −1 g / cm 2. 【請求項４】 該酢酸銅又は酢酸銀が、パラジウムを含
有或いは付着させてなるものである請求項１記載の薄膜
形形成基材の製造法4. The method for producing a thin film forming substrate according to claim 1, wherein the copper acetate or silver acetate contains or adheres to palladium. 【請求項５】 該パラジウムの含有或いは付着重量が、
該酢酸銅又は酢酸銀に対して 100〜4,000ppmの範囲であ
る請求項４記載の薄膜形成基材の製造法5. The content or adhesion weight of the palladium is
The method for producing a thin film-forming substrate according to claim 4, wherein the amount is in the range of 100 to 4,000 ppm with respect to the copper acetate or silver acetate.
JP20640791A 1991-04-08 1991-07-23 Production of thin film forming substrate Pending JPH0565662A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP20640791A JPH0565662A (en) 1991-07-23 1991-07-23 Production of thin film forming substrate
EP92106064A EP0508399A2 (en) 1991-04-08 1992-04-08 Method of producing thin film-deposited substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20640791A JPH0565662A (en) 1991-07-23 1991-07-23 Production of thin film forming substrate

Publications (1)

Publication Number Publication Date
JPH0565662A true JPH0565662A (en) 1993-03-19

Family

ID=16522854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20640791A Pending JPH0565662A (en) 1991-04-08 1991-07-23 Production of thin film forming substrate

Country Status (1)

Country Link
JP (1) JPH0565662A (en)

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