JPH0565631A - Thin al-alloy light-shielding film and al-alloy sputtering target for forming thin light-shielding film - Google Patents
Thin al-alloy light-shielding film and al-alloy sputtering target for forming thin light-shielding filmInfo
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- JPH0565631A JPH0565631A JP3230497A JP23049791A JPH0565631A JP H0565631 A JPH0565631 A JP H0565631A JP 3230497 A JP3230497 A JP 3230497A JP 23049791 A JP23049791 A JP 23049791A JP H0565631 A JPH0565631 A JP H0565631A
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- light
- alloy
- thin film
- shielding thin
- shielding film
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Al合金遮光薄膜及び遮
光薄膜形成用Al合金スパッタリングターゲットに関し、
詳細には、液晶表示パネル又は固体撮像装置（素子）等
の遮光薄膜に用いられるアルミニウム合金遮光薄膜（Al
合金遮光薄膜）、及び、遮光薄膜形成用Al合金スパッタ
リングターゲットに関する。TECHNICAL FIELD The present invention relates to an Al alloy light-shielding thin film and an Al alloy sputtering target for forming a light-shielding thin film,
Specifically, an aluminum alloy light-shielding thin film (Al) used for a light-shielding thin film of a liquid crystal display panel or a solid-state imaging device (element) is used.
Alloy light-shielding thin film) and an Al alloy sputtering target for forming a light-shielding thin film.
【０００２】[0002]
【従来の技術】液晶表示パネルは、近年、大画面化、高
精度化を目的とした方向に展開しており、現在２端子又
は３端子素子を使用したアクティブマトリックス方式の
ものが開発されている。中でも薄膜トランジスタ（TFT)
を用いたものは、大型、高精細の液晶表示パネルの主流
となっている。2. Description of the Related Art In recent years, liquid crystal display panels have been developed in a direction aimed at large screens and high precision, and currently active matrix type ones using 2-terminal or 3-terminal elements have been developed. .. Above all, thin film transistor (TFT)
The one using is the mainstream of large-sized, high-definition liquid crystal display panels.
【０００３】このような方式の液晶表示パネルでは、石
英やガラス等の透明絶縁基板上にa-Si，p-Si等の半導体
領域を部分的に形成し、その内に TFTを形成し、この T
FTをスイッチとしてその上に電極、液晶等の表示体を形
成して表示パネルとして使用する。しかし、透明基板を
用いる場合、光が半導体領域に入り、光励起電流が流
れ、オフ動作が不充分になるという問題点がある。そこ
で、光の半導体領域への進入の防止対策として、 TFT領
域の上部又は下部或いは上下部に金属薄膜（遮光薄膜）
を形成し、遮光する方法がよく用いられている。又、こ
のような遮光薄膜は半導体領域だけでなく、各画素間の
上下に細巾で格子状に形成し、コントラスト向上のため
にも用いられている。In such a liquid crystal display panel, a semiconductor region such as a-Si or p-Si is partially formed on a transparent insulating substrate such as quartz or glass, and a TFT is formed in the semiconductor region. T
The FT is used as a switch and a display body such as an electrode and a liquid crystal is formed on it to be used as a display panel. However, when a transparent substrate is used, there is a problem that light enters the semiconductor region, a photoexcitation current flows, and the off operation becomes insufficient. Therefore, as a measure to prevent light from entering the semiconductor region, a metal thin film (light-shielding thin film) is formed on the upper, lower, or upper and lower parts of the TFT region.
A method of forming light and shielding it from light is often used. Further, such a light-shielding thin film is formed not only in the semiconductor region but also in a narrow grid pattern above and below each pixel and is used for improving contrast.
【０００４】従来、かかる遮光薄膜としては、Cr等の高
融点金属又は着色樹脂が用いられている。Conventionally, a refractory metal such as Cr or a colored resin has been used as the light-shielding thin film.
【０００５】固体撮像装置（素子）は、撮像能力が急速
に進歩してきており、近年高性能化の要望が強くなって
きている。従来の固体撮像素子の断面図を図１に示す。
半導体基板１上にはマトリックス状に受光窓が開口され
た遮光薄膜５が形成されている。この遮光薄膜５は信号
配線７と同一工程で形成する場合が多く、そのため純Al
及び Al-Si合金薄膜が多用されている。尚、図１におい
て、２はＮ型拡散層、３は電極、４は層間絶縁膜、６は
絶縁膜を示すものである。上記基板１には通常Ｐ型シリ
コン基板が使用される。The solid-state image pickup device (element) has been rapidly advancing in image pickup ability, and in recent years, there has been a strong demand for higher performance. A cross-sectional view of a conventional solid-state image sensor is shown in FIG.
On the semiconductor substrate 1, a light shielding thin film 5 having a light receiving window opened in a matrix is formed. This light-shielding thin film 5 is often formed in the same step as the signal wiring 7, and therefore pure Al is used.
And Al-Si alloy thin films are often used. In FIG. 1, 2 is an N-type diffusion layer, 3 is an electrode, 4 is an interlayer insulating film, and 6 is an insulating film. A P-type silicon substrate is usually used as the substrate 1.
【０００６】[0006]
【発明が解決しようとする課題】ところが、前記従来の
液晶表示パネル用遮光薄膜、即ち高融点金属又は着色樹
脂製の遮光薄膜においては、反射率が低いため、遮光薄
膜に光が吸収され、遮光薄膜の温度上昇が起こる。特に
金属膜では熱伝導率が高いため、遮光薄膜外面に照射さ
れた光により、遮光部内部（遮光薄膜の内側で液晶部に
近い面）で温度上昇が容易に起こり、これにより液晶の
温度が上昇し、液晶の電極界面での電気化学反応が促進
され、 TFTオフ電流が増大し、その結果表示品位の著し
い低下が生じるという問題点がある。However, the conventional light-shielding thin film for liquid crystal display panels, that is, the light-shielding thin film made of refractory metal or colored resin, has a low reflectance, so that the light-shielding thin film absorbs light and blocks light. An increase in the temperature of the thin film occurs. In particular, since the metal film has a high thermal conductivity, the temperature of the liquid crystal is easily increased by the light emitted to the outer surface of the light-shielding thin film inside the light-shielding portion (the surface inside the light-shielding thin film, which is close to the liquid crystal portion). There is a problem that the temperature rises, the electrochemical reaction at the electrode interface of the liquid crystal is promoted, the TFT off current increases, and as a result, the display quality is remarkably lowered.
【０００７】この対策として、上記低反射率遮光薄膜に
代えて反射率の高い遮光薄膜を用いる手段がある。かか
る高反射率遮光薄膜としては、Au，Cu，Alが考えられる
が、価額、基板との密着性、エッチングの容易性からAl
が最適であり、純Alや少量のSiを添加した Al-Si合金薄
膜が多用されている。As a countermeasure against this, there is a means of using a light-shielding thin film having a high reflectance in place of the above-mentioned low-reflectance light-shielding thin film. Au, Cu, and Al can be considered as such a high-reflectance light-shielding thin film, but Al, Cu, and Al are considered because of their price, adhesion to the substrate, and ease of etching.
Is optimal, and pure Al and Al-Si alloy thin films with a small amount of Si added are often used.
【０００８】しかしながら、かかる純Alや Al-Si合金薄
膜では、成膜時又は積層によって膜に生じた残留応力に
より、又は、液晶表示パネル製造時に受ける熱履歴によ
り、ヒロックが発生するという問題点がある。又、ピン
ホールが発生し易く、光照射時にピンホールを通った光
が TFTを動作させ、誤って電気信号を発生させる。更
に、熱伝導率が高いため、光照射時の温度上昇により液
晶パネル表示品位が低下するという問題点もある。特
に、近年開発が活発に行われている大画面表示可能な投
写型液晶ディスプレイにおいては、明るさの確保のため
にハロゲンランプ等により強い光が照射されるため、上
記の誤った電気信号の発生及びヒロックの発生がより顕
著になってくる。However, in such a pure Al or Al-Si alloy thin film, there is a problem that hillocks are generated due to residual stress generated in the film during film formation or lamination, or due to thermal history received during liquid crystal display panel manufacturing. is there. Also, pinholes are likely to occur, and the light passing through the pinholes activates the TFT during light irradiation, causing electrical signals to be erroneously generated. Further, since the thermal conductivity is high, there is a problem that the display quality of the liquid crystal panel is deteriorated due to the temperature rise during light irradiation. In particular, in a projection type liquid crystal display capable of large screen display, which has been actively developed in recent years, strong light is emitted from a halogen lamp or the like in order to secure brightness, and thus the above-mentioned erroneous electric signal is generated. And the occurrence of hillocks becomes more remarkable.
【０００９】一方、前記従来の固体撮像素子用遮光薄
膜、即ち純Al及びAl-Si合金薄膜においては、半導体基
板の表面準位を消去するために施すアニール(300〜 450
℃) によりAlの熱的移動が起こり、遮光膜にヒロックが
発生するという問題点がある。又、このヒロックが受光
窓の端面から受光素子側に飛び出した場合は、受光素子
の受光面積が他のそれよりも小さくなり、その感度が低
下する。更に、ピンホールが発生し易く、その結果誤っ
て電気信号を発生させる問題もある。On the other hand, in the conventional light-shielding thin film for solid-state image pickup device, that is, pure Al and Al--Si alloy thin film, annealing (300 to 450) performed to erase the surface level of the semiconductor substrate is performed.
(° C.) causes thermal transfer of Al, which causes a problem that hillocks are generated in the light shielding film. Further, when this hillock jumps out from the end surface of the light receiving window toward the light receiving element, the light receiving area of the light receiving element becomes smaller than that of the other light receiving element, and the sensitivity thereof is lowered. Further, there is a problem that pinholes are likely to occur, resulting in erroneous generation of electrical signals.
【００１０】本発明はこの様な事情に着目してなされた
ものであって、その目的は従来のものがもつ以上のよう
な問題点を解消し、反射率が高く、密着性が良く、エッ
チングが容易であり、耐ヒロック性に優れ、熱伝導率が
低く、又、耐食性に優れてピンホールが発生し難いAl合
金遮光薄膜及び遮光薄膜形成用Al合金スパッタリングタ
ーゲットを提供しようとするものである。The present invention has been made by paying attention to such a situation, and its purpose is to solve the above-mentioned problems of the conventional one, to have high reflectance, good adhesion, and etching. It is an object of the present invention to provide an Al alloy light-shielding thin film and an Al alloy sputtering target for forming a light-shielding thin film, which is easy to form, has excellent hillock resistance, low thermal conductivity, and is excellent in corrosion resistance and is unlikely to cause pinholes. ..
【００１１】[0011]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明に係るAl合金遮光薄膜及び遮光薄膜形成用
Al合金スパッタリングターゲットは、次のような構成と
している。In order to achieve the above object, an Al alloy light-shielding thin film and a light-shielding thin film forming film according to the present invention are provided.
The Al alloy sputtering target has the following structure.
【００１２】即ち、請求項１記載のAl合金遮光薄膜は、
合金成分としてTi，Zr，Taのうちの１種又は２種以上を
合計で 0.2〜10at％含有するAl合金よりなることを特徴
とするAl合金遮光薄膜である。That is, the Al alloy light-shielding thin film according to claim 1 is
An Al alloy light-shielding thin film comprising an Al alloy containing one or more of Ti, Zr, and Ta as alloy components in a total amount of 0.2 to 10 at%.
【００１３】請求項２記載のAl合金遮光薄膜は、液晶表
示パネル又は固体撮像装置の遮光薄膜として用いる請求
項１記載のAl合金遮光薄膜である。The Al alloy light-shielding thin film according to claim 2 is the Al alloy light-shielding thin film according to claim 1, which is used as a light-shielding thin film of a liquid crystal display panel or a solid-state image pickup device.
【００１４】請求項３記載のAl合金遮光薄膜は、スパッ
タリングにより形成されてなる請求項１又は請求項２記
載のAl合金遮光薄膜である。The Al alloy light-shielding thin film according to claim 3 is the Al alloy light-shielding thin film according to claim 1 or 2, which is formed by sputtering.
【００１５】請求項４記載のAl合金スパッタリングター
ゲットは、合金成分としてTi，Zr，Taのうちの１種又は
２種以上を合計で 0.2〜10at％含有するAl合金よりなる
ことを特徴とする遮光薄膜形成用Al合金スパッタリング
ターゲットである。The Al alloy sputtering target according to claim 4 is composed of an Al alloy containing 0.2 to 10 at% in total of one or more of Ti, Zr, and Ta as alloy components. It is an Al alloy sputtering target for thin film formation.
【００１６】[0016]
【作用】本発明者等は、Alに種々の元素を添加したAl合
金スパッタリングターゲットを製作し、これらターゲッ
トを使用して、スパッタリング法により種々の組成のAl
合金遮光薄膜を形成し、その組成、及び、反射率、耐食
性、耐ヒロック性、密着性、熱伝導率、エッチング特性
等の遮光薄膜に要求される諸特性を調べ、その結果Ti，
Zr，Taの添加が上記特性の向上に最も有効であり、これ
らの元素を添加したAl合金遮光薄膜は遮光薄膜としての
優れた特性を有することを見出し、本発明を完成するに
至ったものである。The present inventors produced Al alloy sputtering targets in which various elements were added to Al, and using these targets, Al of various compositions was formed by the sputtering method.
An alloy light-shielding thin film is formed, and its composition and various characteristics required for the light-shielding thin film such as reflectance, corrosion resistance, hillock resistance, adhesion, thermal conductivity, and etching characteristics are investigated.
It was found that the addition of Zr and Ta is most effective in improving the above-mentioned characteristics, and that the Al alloy light-shielding thin film containing these elements has excellent properties as a light-shielding thin film, and has completed the present invention. is there.
【００１７】即ち、合金成分としてTi，Zr，Taのうちの
１種又は２種以上を合計で 0.2〜10at％含有するAl合金
よりなるAl合金遮光薄膜（本発明に係るAl合金遮光薄
膜）は、AlをベースとするAl合金よりなるので、AlやAl
合金の性質を発揮し得、それらと同様に反射率が高く、
密着性が良く、エッチングが容易である。That is, an Al alloy light-shielding thin film (Al alloy light-shielding thin film according to the present invention) made of an Al alloy containing 0.2 to 10 at% in total of one or more of Ti, Zr, and Ta as alloy components. , Because it consists of Al alloy based on Al, Al and Al
It can exhibit the properties of alloys, as well as high reflectivity,
Good adhesion and easy etching.
【００１８】AlにTi，Zr，Taのうちの１種又は２種以上
を添加すると、その添加量の増大に伴って、耐ヒロック
性及び耐食性が向上し、熱伝導率が低くなる。故に、上
記本発明に係るAl合金遮光薄膜は、耐ヒロック性に優
れ、熱伝導率が低く、又、耐食性に優れてピンホールが
発生し難い。When one or more of Ti, Zr, and Ta are added to Al, the hillock resistance and corrosion resistance are improved and the thermal conductivity is lowered as the amount of addition is increased. Therefore, the Al alloy light-shielding thin film according to the present invention has excellent hillock resistance, low thermal conductivity, and excellent corrosion resistance, and pinholes are unlikely to occur.
【００１９】ここで、Ti，Zr，Taのうちの１種又は２種
以上の添加量（含有量）は、合計で0.2 〜10at％にする
必要がある。その理由は次の通りである。0.2 at％未満
では耐ヒロック性及び耐食性が不充分であり、又、熱伝
導率が充分に低くならず、10at％超では反射率が低下し
て光照射により熱を吸収し易くなると共に、エッチング
が難しくなるからである。特に、ウエットエッチングの
際においては、10at％超であると、エッチング残渣が生
じ、良好なエッチングができなくなる。Here, the addition amount (content) of one or more of Ti, Zr, and Ta must be 0.2 to 10 at% in total. The reason is as follows. If it is less than 0.2 at%, the hillock resistance and corrosion resistance are insufficient, and the thermal conductivity is not sufficiently low, and if it exceeds 10 at%, the reflectance decreases and it is easy to absorb heat by light irradiation, and etching Because it becomes difficult. Particularly, in the case of wet etching, if it exceeds 10 at%, an etching residue is generated and good etching cannot be performed.
【００２０】そこで、本発明に係るAl合金遮光薄膜は、
前述の如く、合金成分としてTi，Zr，Taのうちの１種又
は２種以上を合計で0.2〜10at％含有するAl合金よりな
るようにしており、従って、反射率が高く、密着性が良
く、エッチングが容易であり、耐ヒロック性に優れ、熱
伝導率が低く、又、耐食性に優れてピンホールが発生し
難いものである（請求項１記載のAl合金薄膜）。Therefore, the Al alloy light-shielding thin film according to the present invention is
As described above, the alloy component is made of an Al alloy containing one or more of Ti, Zr, and Ta in a total amount of 0.2 to 10 at%. Therefore, the reflectance is high and the adhesion is good. Further, it is easy to etch, has excellent hillock resistance, has low thermal conductivity, and has excellent corrosion resistance so that pinholes hardly occur (Al alloy thin film according to claim 1).
【００２１】本発明に係るAl合金遮光薄膜は上記の如く
優れた特性を有するので、液晶表示パネル又は固体撮像
装置の遮光薄膜として好適に用いることができる（請求
項２記載のAl合金遮光薄膜）。Since the Al alloy light-shielding thin film according to the present invention has excellent characteristics as described above, it can be suitably used as a light-shielding thin film for a liquid crystal display panel or a solid-state image pickup device (Al alloy light-shielding thin film according to claim 2). ..
【００２２】上記Al合金遮光薄膜は、スパッタリングに
より形成されている方が膜の合金組成の均一性がより優
れていて望ましい（請求項３記載のAl合金遮光薄膜）。It is desirable that the Al alloy light-shielding thin film is formed by sputtering because the alloy composition of the film is more uniform (the Al alloy light-shielding thin film according to claim 3).
【００２３】一方、本発明に係る遮光薄膜形成用Al合金
スパッタリングターゲットは、前述の如く、合金成分と
してTi，Zr，Taのうちの１種又は２種以上を合計で 0.2
〜10at％含有するAl合金よりなる遮光薄膜形成用Al合金
スパッタリングターゲットである（請求項４記載のAl合
金スパッタリングターゲット）。On the other hand, as described above, the Al alloy sputtering target for forming a light-shielding thin film according to the present invention contains one or more of Ti, Zr, and Ta as alloy components in a total amount of 0.2.
An Al alloy sputtering target for forming a light-shielding thin film, comprising an Al alloy containing 10 to 10 at% (Al alloy sputtering target according to claim 4).
【００２４】かかるAl合金スパッタリングターゲット
は、合金であるので組成的に均一であり、そのため使用
中の組成の経時変化が生じず、又、スパッタ率及び出射
角度が均一であるので、ターゲットの組成と得られる合
金遮光薄膜の組成とが略一致する。故に、前記組成を有
する本発明に係るAl合金遮光薄膜を確実に安定して得る
ことができるようになる。Since such an Al alloy sputtering target is an alloy, it has a uniform composition. Therefore, the composition does not change with time during use, and the sputtering rate and the emission angle are uniform. The composition of the obtained alloy light-shielding thin film is substantially the same. Therefore, the Al alloy light-shielding thin film according to the present invention having the above composition can be reliably and stably obtained.
【００２５】[0025]
（実施例１）合金４Kgを真空下で誘導溶解し、水冷銅鋳
型内に鋳造し、Ti，Zr又はTaをそれぞれ単独で 0.2〜10
at％含有する２元系Al合金鋳塊を得た。該鋳塊よりスパ
ッタリングターゲットを採取し、これを用いてDCマグネ
トロンスパッタリング法により、ソーダライムガラス基
板上に厚さ：1000ÅのAl合金薄膜（遮光薄膜）を形成
し、試料となした。(Example 1) 4 kg of alloy was induction-melted under vacuum, cast in a water-cooled copper mold, and Ti, Zr, or Ta alone was 0.2 to 10 each.
A binary Al alloy ingot containing at% was obtained. A sputtering target was sampled from the ingot, and an Al alloy thin film (light-shielding thin film) having a thickness of 1000 Å was formed on a soda lime glass substrate by a DC magnetron sputtering method using this as a sample.
【００２６】上記試料について、波長:780nmのレーザー
光による反射率を膜面側から測定した。その結果を図２
に示す。いづれの合金系の試料も、元素添加量の増大に
伴って反射率は若干減少する。添加量が10at％以下の範
囲ではいづれも70％以上の高い反射率を示した。The reflectance of the sample with a laser beam having a wavelength of 780 nm was measured from the film surface side. The result is shown in Figure 2.
Shown in. The reflectance of each of the alloy-based samples decreases slightly as the amount of added elements increases. In the range where the added amount was 10 at% or less, a high reflectance of 70% or more was shown in each case.
【００２７】（実施例２）実施例１の場合と同様のター
ゲットを用いて同様のスパッタリング法により、ソーダ
ライムガラス基板上に厚さ：5000ÅのTa2O5膜を形成し
た後、Ti，Zr、Taの含有量が種々異なる溶製Al合金ター
ゲットを用いて前記方法と同様法により、上記 Ta2O5膜
上に厚さ：3000ÅのAl合金遮光薄膜を形成した。次い
で、該Al合金薄膜をホトリソグラフィー及びウエットエ
ッチングにより10μm 巾のストライプパターン状に加工
し、試料となした。(Example 2) A Ta 2 O 5 film having a thickness of 5000 Å was formed on a soda lime glass substrate by the same sputtering method using the same target as in Example 1, and then Ti, Zr was formed. , An Al alloy light-shielding thin film having a thickness of 3000 Å was formed on the Ta 2 O 5 film by the same method as above using molten Al alloy targets having different Ta contents. Then, the Al alloy thin film was processed into a stripe pattern having a width of 10 μm by photolithography and wet etching to obtain a sample.
【００２８】上記試料について、真空熱処理(400℃で１
時間保持）をした後、ストライプパターン表面に発生す
るヒロック数を測定し、ヒロック密度を求めた。その結
果を図３に示す。Ti，Zr、Taの添加は、少量の添加でヒ
ロック密度が大幅に減少し、耐ヒロック性が向上するこ
とが判る。Ti，Zr、Ta添加効果は独立しており、ヒロッ
ク密度減少に対して加成性が成立する。従って、かかる
効果は、Ti，Zr、Taのうちの２種以上を同時に添加した
場合でも成り立つ。Vacuum heat treatment of the above sample (1 at 400 ° C.
After keeping the time), the number of hillocks generated on the stripe pattern surface was measured to determine the hillock density. The result is shown in FIG. It can be seen that the addition of Ti, Zr, and Ta significantly reduces the hillock density and improves the hillock resistance with a small amount of addition. The effects of Ti, Zr, and Ta addition are independent, and additivity holds for the reduction of the hillock density. Therefore, such an effect holds even when two or more of Ti, Zr, and Ta are added at the same time.
【００２９】（実施例３）実施例１の場合と同様のター
ゲットを用いて同様のスパッタリング法により、厚さ：
10μm のAl合金遮光薄膜を形成し、試料とした。この試
料について光交流法による遮光薄膜の熱伝導率測定を行
った。その結果を図４に示す。Ti，Zr、Taの添加量の増
大に伴って熱伝導率が低下してゆく。この場合もTi，Z
r、Taの添加効果は独立しており、熱伝導率の低下に対
して加成性が成立する。従って、かかる効果は、Ti，Z
r、Taのうちの２種以上を同時に添加した場合でも成り
立つ。(Example 3) Using the same target as in Example 1 and performing the same sputtering method, the thickness:
A 10 μm Al alloy light-shielding thin film was formed and used as a sample. With respect to this sample, the thermal conductivity of the light-shielding thin film was measured by the optical AC method. The result is shown in FIG. The thermal conductivity decreases as the amount of Ti, Zr, and Ta added increases. Also in this case Ti, Z
The effects of adding r and Ta are independent, and additivity is established for the decrease in thermal conductivity. Therefore, the effect is Ti, Z
It holds even when two or more of r and Ta are added at the same time.
【００３０】（実施例４）実施例１の場合と同様のター
ゲットを用いて同様のスパッタリング法により、ソーダ
ライムガラス基板上に厚さ:500ÅのAl合金遮光薄膜を形
成し、試料となした。この試料について、環境加速試験
として PCT（Pressure Cooker Test；温度80℃，圧力
1.2atm, 湿度85%RH ）を行なうと共に、 PCT前後の膜
の反射率を測定して比較した。波長:780nmのレーザー光
により反射率を測定した場合のPCT:60時間による反射率
の変化量（減少率）を図５に示す。反射率の減少率はT
i，Zr、Taを少量添加することにより、著しく減少する
ことが判る。Example 4 An Al alloy light-shielding thin film having a thickness of 500 Å was formed on a soda lime glass substrate by the same sputtering method using the same target as in Example 1 to prepare a sample. PCT (Pressure Cooker Test; temperature 80 ℃, pressure)
1.2atm, humidity 85% RH) was performed, and the reflectance of the film before and after PCT was measured and compared. FIG. 5 shows the amount of change (decrease rate) in PCT: 60 hours when the reflectance was measured with a laser beam having a wavelength of 780 nm. The rate of decrease of reflectance is T
It can be seen that the addition of i, Zr, and Ta in small amounts significantly reduces the amount.
【００３１】反射率低下の主な原因はピンホールの発生
によって光が透過するためであり、Ti，Zr、Taの添加が
ピンホールの発生防止に有効であることが判る。かかる
効果はTi，Zr、Taを同時に添加した場合でも得られる。The main cause of the decrease in reflectance is that light is transmitted by the generation of pinholes, and it is understood that addition of Ti, Zr, and Ta is effective in preventing the generation of pinholes. Such an effect can be obtained even when Ti, Zr and Ta are added at the same time.
【００３２】[0032]
【発明の効果】本発明に係るAl合金遮光薄膜は、反射率
が高く、耐ヒロック性に優れ、熱伝導率が低く、耐食性
に優れてピンホールが発生し難い。又、密着性及びエッ
チング性もAlやAl合金膜と同様に優れている。従って、
液晶表示パネル及び固体撮像装置（素子）の遮光薄膜と
して好適に用いることができ、表示品位に優れた液晶表
示パネル及び高感度の固体撮像素子を安定して製造でき
るようになる。The Al alloy light-shielding thin film according to the present invention has a high reflectance, an excellent hillock resistance, a low thermal conductivity, an excellent corrosion resistance, and is unlikely to cause pinholes. Also, the adhesiveness and etching property are as excellent as those of Al and Al alloy films. Therefore,
It can be suitably used as a light-shielding thin film for a liquid crystal display panel and a solid-state imaging device (element), and a liquid crystal display panel excellent in display quality and a high-sensitivity solid-state imaging element can be stably manufactured.
【００３３】又、本発明に係る遮光薄膜形成用Al合金ス
パッタリングターゲットによれば、上記本発明に係るAl
合金遮光薄膜を確実に安定して製造し得るようになる。Further, according to the Al alloy sputtering target for forming a light-shielding thin film according to the present invention, the Al according to the present invention described above is used.
The alloy light-shielding thin film can be reliably and stably manufactured.
【図１】従来の固体撮像装置（素子）の要部を示す側断
面である。FIG. 1 is a side cross-sectional view showing a main part of a conventional solid-state imaging device (element).
【図２】実施例１に係るAl合金遮光薄膜についてのTi，
Zr、Ta含有率と反射率との関係を示す図である。FIG. 2 is a schematic diagram of Ti for an Al alloy light-shielding thin film according to Example 1.
It is a figure which shows the relationship between Zr and Ta content rate and reflectance.
【図３】実施例２に係るAl合金遮光薄膜についてのTi，
Zr、Ta含有率とヒロック密度との関係を示す図である。FIG. 3 shows Ti for an Al alloy light-shielding thin film according to Example 2,
It is a figure which shows the relationship between Zr and Ta content rate and hillock density.
【図４】実施例３に係るAl合金遮光薄膜についてのTi，
Zr、Ta含有率と熱伝導率との関係を示す図である。FIG. 4 shows Ti for an Al alloy light-shielding thin film according to Example 3,
It is a figure which shows the relationship between Zr and Ta content rate and thermal conductivity.
【図５】実施例４に係るAl合金遮光薄膜についてのTi，
Zr、Ta含有率と環境加速試験での反射率の減少量との関
係を示す図である。FIG. 5 is a schematic diagram of Ti for an Al alloy light-shielding thin film according to Example 4.
It is a figure which shows the relationship between Zr, Ta content rate and the amount of reduction of the reflectance in an environmental acceleration test.
１--半導体基板（Ｐ型シリコン基板） ２--Ｎ型拡散
層 ３--電極 ４--層間絶縁膜 ５--遮光薄膜 ６--絶縁膜 ７
--信号配線1--Semiconductor substrate (P-type silicon substrate) 2--N-type diffusion layer 3--Electrode 4--Interlayer insulating film 5--Light-shielding thin film 6--Insulating film 7
--Signal wiring
Claims (4)
又は２種以上を合計で 0.2〜10at％含有するAl合金より
なることを特徴とするAl合金遮光薄膜。1. An Al alloy light-shielding thin film, comprising an Al alloy containing 0.2 to 10 at% in total of one or more of Ti, Zr, and Ta as alloy components.
薄膜として用いる請求項１記載のAl合金遮光薄膜。2. The Al alloy light-shielding thin film according to claim 1, which is used as a light-shielding thin film for a liquid crystal display panel or a solid-state imaging device.
求項１又は請求項２記載のAl合金遮光薄膜。3. The Al alloy light-shielding thin film according to claim 1, which is formed by sputtering.
又は２種以上を合計で 0.2〜10at％含有するAl合金より
なることを特徴とする遮光薄膜形成用Al合金スパッタリ
ングターゲット。4. An Al alloy sputtering target for forming a light-shielding thin film, comprising an Al alloy containing 0.2 to 10 at% in total of one or more of Ti, Zr, and Ta as alloy components.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3230497A JPH0565631A (en) | 1991-09-10 | 1991-09-10 | Thin al-alloy light-shielding film and al-alloy sputtering target for forming thin light-shielding film |
| US08/273,961 US5500301A (en) | 1991-03-07 | 1994-07-12 | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| US08/888,784 US5976641A (en) | 1991-03-07 | 1997-07-07 | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| US09/385,889 US6206985B1 (en) | 1991-03-07 | 1999-08-30 | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3230497A JPH0565631A (en) | 1991-09-10 | 1991-09-10 | Thin al-alloy light-shielding film and al-alloy sputtering target for forming thin light-shielding film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0565631A true JPH0565631A (en) | 1993-03-19 |
Family
ID=16908700
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3230497A Withdrawn JPH0565631A (en) | 1991-03-07 | 1991-09-10 | Thin al-alloy light-shielding film and al-alloy sputtering target for forming thin light-shielding film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0565631A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0736793A3 (en) * | 1995-04-03 | 1997-01-22 | Toshiba Kk | Light-shielding film, liquid crystal display device and material for forming light-shielding film |
-
1991
- 1991-09-10 JP JP3230497A patent/JPH0565631A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0736793A3 (en) * | 1995-04-03 | 1997-01-22 | Toshiba Kk | Light-shielding film, liquid crystal display device and material for forming light-shielding film |
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| A300 | Withdrawal of application because of no request for examination |
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