JPH0559557A - Photo-cvd device - Google Patents

Photo-cvd device

Info

Publication number
JPH0559557A
JPH0559557A JP21575791A JP21575791A JPH0559557A JP H0559557 A JPH0559557 A JP H0559557A JP 21575791 A JP21575791 A JP 21575791A JP 21575791 A JP21575791 A JP 21575791A JP H0559557 A JPH0559557 A JP H0559557A
Authority
JP
Japan
Prior art keywords
film forming
optical system
substrate
light source
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21575791A
Other languages
Japanese (ja)
Inventor
Naoki Inoue
直樹 井上
Haruyuki Nakaoka
春雪 中岡
Hideki Azuma
秀樹 東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osaka Gas Co Ltd
Original Assignee
Osaka Gas Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osaka Gas Co Ltd filed Critical Osaka Gas Co Ltd
Priority to JP21575791A priority Critical patent/JPH0559557A/en
Publication of JPH0559557A publication Critical patent/JPH0559557A/en
Pending legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To provide the photo-CVD device which is decreased in the energy loss from a light source. CONSTITUTION:The optical system 3B of the photo-CVD device consisting of a film forming vessel 1 having a substrate holding part 4, the light source 3A for supplying film forming energy to the gaseous material in this film forming vessel 1 and the optical system 3B for shaping the exit ray flux from this light source 3A to a exciting ray flux is constituted of plural lenses along the optical axis P and the lens at the terminal is fixed and installed to the above-mentioned film forming vessel 1 to constitute an incident window 1A. An angle changing means 7 which changes the angle formed by the film forming surface of the substrate 4C and the exciting ray flux is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基板保持部を備えた成
膜容器と、前記成膜容器内の材料ガスに膜形成エネルギ
ーを供給する光源と、前記光源からの出射光線束を平行
な励起光線束に成形する光学系とからなる光CVD装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming container having a substrate holding portion, a light source for supplying film forming energy to a material gas in the film forming container, and a light flux emitted from the light source in parallel. The present invention relates to an optical CVD apparatus including an optical system that forms an excitation light beam.

【0002】[0002]

【従来の技術】従来の光CVD装置は、図3に示すよう
に、基板の膜形成面が上向きとなるように水平配置され
た基板保持部に対して、基板保持部の側方に励起光線束
用の入射窓に平板ガラスを取付けた成膜容器と、光源か
らの出射光線束を励起光線束に成形する光学系とを別々
に備え、その光学系からの光線束を、入射窓に入射可能
となるように両者を配置してあった。
2. Description of the Related Art In a conventional photo-CVD apparatus, as shown in FIG. 3, an excitation light beam is laterally placed on a substrate holding portion which is horizontally arranged so that a film forming surface of the substrate faces upward. A film deposition container with a flat glass attached to the entrance window for the bundle and an optical system for shaping the bundle of rays emitted from the light source into the bundle of excitation rays are separately provided, and the ray bundle from that optical system is incident on the window. Both were arranged so that it would be possible.

【0003】[0003]

【発明が解決しようとする課題】ところで、成膜にあた
っては、励起光線束の伝播方向下流でのエネルギー低下
に起因して下流側に配置された基板の膜厚が上流側に配
置された基板の膜厚よりも薄くなることを回避すべく、
励起光線束の伝播経路を下流側ほど基板に近づけるよう
に光学系の光路を調整する必要があった。更に、光源か
ら出射した光線束の光エネルギーは、前記光学系を構成
する複数のレンズである程度減衰しており、さらに入射
窓での減衰をも引き起こすことは、光エネルギーの膜形
成エネルギーへの変換効率が低下することにつながるの
で好ましくない。本発明の目的は上述した従来欠点を解
消する点にある。
By the way, when forming a film, the film thickness of the substrate arranged on the downstream side due to the decrease in energy on the downstream side in the propagation direction of the excitation light flux is different from that of the substrate arranged on the upstream side. To avoid becoming thinner than the film thickness,
It has been necessary to adjust the optical path of the optical system so that the propagation path of the excitation light flux is closer to the substrate toward the downstream side. Further, the light energy of the light flux emitted from the light source is attenuated to some extent by the plurality of lenses constituting the optical system, and further, the attenuation at the entrance window is also caused by the conversion of light energy into film forming energy. This is not preferable because it leads to a decrease in efficiency. An object of the present invention is to eliminate the above-mentioned conventional drawbacks.

【0004】[0004]

【課題を解決するための手段】よって、この目的を達成
するため、本発明による光CVD装置の特徴構成は、光
学系を光軸に沿って配置した複数のレンズで構成し、終
端のレンズを成膜容器に固定設置して入射窓を構成する
とともに、基板の膜形成面と励起光線束とのなす角度を
変更する角度変更手段を設けてあることにある。
To achieve this object, therefore, the photo CVD apparatus according to the present invention is characterized in that the optical system comprises a plurality of lenses arranged along the optical axis, and the end lens is This is because the entrance window is fixedly installed in the film forming container, and an angle changing means for changing the angle formed by the film forming surface of the substrate and the exciting light beam bundle is provided.

【0005】[0005]

【作用】本願発明の特徴構成においては、光学系を構成
する複数のレンズのうち終端のレンズを前記成膜容器に
固設して入射窓を構成することで、光学系以外の光学素
子で光エネルギーが減衰することを低減し、光エネルギ
ーの膜形成エネルギーへの変換効率が向上する。角度変
更手段により、励起光線束が基板の膜形成面とのなす角
度を変更することで、励起光線束の伝播方向に沿って配
置された基板上に形成される膜厚を均一にできるように
管理維持される。ここで、角度変更手段は、例えば入射
した励起光線束に対して基板保持部を傾斜させたり、光
学系の光軸を基板保持部に対して傾斜させることで実現
できる。尚、終端のレンズを成膜容器に固設して入射窓
を構成してあるので、光軸の傾斜に対して終端のレンズ
は相対的に傾くことになるが、終端のレンズを成膜容器
に対して揺動自在に取り付ける場合に比べて入射窓の気
密度を容易に維持することを可能としながらも、終端レ
ンズの中心点に対して光軸を傾斜させることで励起光線
束の歪みを最少に抑えることができる。
In the characteristic configuration of the present invention, the end lens of the plurality of lenses forming the optical system is fixed to the film forming container to form the entrance window, so that an optical element other than the optical system Energy attenuation is reduced, and the efficiency of conversion of light energy into film formation energy is improved. By changing the angle formed by the excitation light flux with the film forming surface of the substrate by the angle changing means, it is possible to make the film thickness formed on the substrate arranged along the propagation direction of the excitation light flux uniform. Managed and maintained. Here, the angle changing means can be realized, for example, by inclining the substrate holding portion with respect to the incident excitation light beam bundle or by inclining the optical axis of the optical system with respect to the substrate holding portion. In addition, since the entrance lens is fixed to the film forming container to form the entrance window, the end lens is inclined relative to the inclination of the optical axis. While it is possible to easily maintain the airtightness of the entrance window as compared with the case where it is mounted swingably, the distortion of the excitation light flux can be reduced by tilting the optical axis with respect to the center point of the terminal lens. Can be kept to a minimum.

【0006】[0006]

【発明の効果】本発明によれば、基板に形成される膜厚
の偏りやばらつきを低減しながらも処理効率のよい光C
VD装置を提供できるようになった。
According to the present invention, the light C having a good processing efficiency while reducing the unevenness and the variation in the film thickness formed on the substrate is obtained.
VD device can now be provided.

【0007】[0007]

【実施例】以下実施例を説明する。図1に示すように、
成膜容器1と、その成膜容器1内にシリコンウェハでな
る基板4Cを上向姿勢で複数枚保持する基板保持部4
と、前記成膜容器1に材料ガスを供給するガス供給装置
2と、前記成膜容器1内で前記材料ガスに膜形成エネル
ギーを供給する励起光線束を出射する光源3A及び光学
系3Bと、前記成膜容器1内を真空吸引する真空吸引手
段6とから光CVD装置を構成してある。前記基板保持
部4は、水平設置された保持部本体4Aに基板加熱手段
としてのヒータ4Bを内装して構成してある。前記光源
3Aは、波長が193nmのArFレーザで構成してあ
る。前記光学系3Bは、断面が8×25mm角で放射状
に出力される前記光源3Aからの出力光線束を、断面が
2×125mm角の水平方向に幅広で垂直方向に薄い平
行光線束に成形する複数のレンズで構成してあり、さら
に詳細には光軸P上に前記出力光線束を水平方向に幅広
に拡散させた後に幅広の平行光線束に成形する2枚のシ
リンドリカルレンズL1,L2と、レンズL2の出力光
線束を垂直方向に収束させた後に平行光線束に成形する
レンズL3,L4とを配置して構成してある。前記光学
系3Bにより成形された光線束は励起光線束として前記
成膜容器1の下端部に形成した入射窓1Aから入射し
て、前記基板保持部4の上方空間を基板4C表面に対し
て概略平行なる経路に沿って通過する。前記入射窓1A
は、前記成膜容器1内を真空維持すべく前記光学系3B
の終端のレンズL4をパッキンを介して固定設置してあ
る。前記ガス供給装置2からの材料ガスは、SiH4
NH3の混合ガスで、前記成膜容器1の上部に形成され
た流入口1Bから流入させる。前記真空吸引手段6にて
真空維持された前記成膜容器1内に前記材料ガスSiH
4とNH3を流入させ、励起光線束を照射すると、材料ガ
スSiH4とNH3が解離して、ヒータ4Bで加熱された
シリコンウェハ上にSiNを組成とする薄膜が生成され
る。ここで、前記入射窓1Aから入射した励起光線束の
伝播方向下流では、上流でエネルギーを消費しているた
めに、材料ガスに与えるエネルギーの不足に起因して膜
厚が薄くなる傾向があるので、励起光線束が伝播方向下
流ほど基板4Cに近づくように励起光線束の前記光軸P
と前記基板4C表面との成す角度を可変設定する角度変
更手段7を設けてある。前記角度変更手段7は、前記光
軸Pを前記光学系3B終端のレンズL4の中心を軸心と
して上下に揺動するモータ駆動方式の揺動機構7Aで構
成してある。
EXAMPLES Examples will be described below. As shown in Figure 1,
The film forming container 1 and a substrate holding unit 4 for holding a plurality of substrates 4C made of silicon wafers in the film forming container 1 in an upward posture.
A gas supply device 2 for supplying a material gas to the film forming container 1, a light source 3A and an optical system 3B for emitting an excitation light beam flux for supplying a film forming energy to the material gas in the film forming container 1, An optical CVD apparatus is constituted by the vacuum suction means 6 for vacuum suctioning the inside of the film forming container 1. The substrate holding unit 4 is configured by internally mounting a heater 4B as a substrate heating means in a holding unit body 4A installed horizontally. The light source 3A is composed of an ArF laser having a wavelength of 193 nm. The optical system 3B forms a bundle of output light rays from the light source 3A, which is radially output with a cross section of 8 × 25 mm square, into a parallel light flux with a cross section of 2 × 125 mm square, which is wide in the horizontal direction and thin in the vertical direction. Two cylindrical lenses L1 and L2, each of which is composed of a plurality of lenses, and more specifically, the output light beam bundle is broadly spread in the horizontal direction on the optical axis P and then formed into a wide parallel light beam bundle, It is configured by arranging lenses L3 and L4 for converging the output light flux of the lens L2 in the vertical direction and then shaping it into a parallel light flux. The light flux formed by the optical system 3B is incident as an excitation light flux from an entrance window 1A formed at the lower end of the film forming container 1, and the upper space of the substrate holding portion 4 is roughly with respect to the surface of the substrate 4C. Pass along parallel paths. The entrance window 1A
Is the optical system 3B for maintaining a vacuum inside the film forming container 1.
The lens L4 at the end of is fixedly installed via packing. The material gas from the gas supply device 2 is a mixed gas of SiH 4 and NH 3 and is introduced from an inlet 1B formed in the upper portion of the film forming container 1. The material gas SiH is stored in the film forming container 1 which is maintained in vacuum by the vacuum suction means 6.
When 4 and NH 3 are flowed in and irradiated with an excitation light flux, the material gases SiH 4 and NH 3 are dissociated, and a thin film having a composition of SiN is generated on the silicon wafer heated by the heater 4B. Here, since energy is consumed upstream in the propagation direction downstream of the excitation light flux incident from the entrance window 1A, the film thickness tends to be thin due to lack of energy given to the material gas. , The optical axis P of the excitation light beam bundle so that the excitation light beam bundle becomes closer to the substrate 4C in the downstream of the propagation direction.
There is provided an angle changing means 7 for variably setting the angle formed by the surface of the substrate 4C and. The angle changing means 7 is composed of a motor-driven swing mechanism 7A that swings the optical axis P up and down about the center of the lens L4 at the end of the optical system 3B.

【0008】以下、本発明の別実施例を説明する。材料
ガスの種類や、基板種類、さらにはレーザの種類は上述
の実施例に限定するものではなく生成すべき薄膜種類に
応じて適宜設定することができる。先の実施例では、角
度変更手段7を前記基板4Cに対して前記光軸Pを傾斜
させる揺動機構7Aで構成してあるが、角度変更手段7
は前記基板保持部4を前記光軸Pに対して傾斜させる揺
動機構7Bで構成してもよいし、揺動機構7A,7Bを
兼用して構成してもよい。
Another embodiment of the present invention will be described below. The type of material gas, the type of substrate, and the type of laser are not limited to those in the above-described embodiments, but can be set as appropriate according to the type of thin film to be produced. In the previous embodiment, the angle changing means 7 is composed of the swinging mechanism 7A for inclining the optical axis P with respect to the substrate 4C.
May be configured by a swinging mechanism 7B that tilts the substrate holding portion 4 with respect to the optical axis P, or may be configured by using the swinging mechanisms 7A and 7B as well.

【0009】尚、特許請求の範囲の項に図面との対照を
便利にする為に符号を記すが、該記入により本発明は添
付図面の構成に限定されるものではない。
It should be noted that although reference numerals are given in the claims for convenience of comparison with the drawings, the present invention is not limited to the configurations of the accompanying drawings by the entry.

【図面の簡単な説明】[Brief description of drawings]

【図1】光CVD装置の概略構成図FIG. 1 is a schematic configuration diagram of an optical CVD apparatus.

【図2】要部の斜視図FIG. 2 is a perspective view of a main part.

【図3】従来例を示す光CVD装置の概略構成図FIG. 3 is a schematic configuration diagram of a photo CVD apparatus showing a conventional example.

【符号の説明】[Explanation of symbols]

1 成膜容器 2 ガス供給装置 3A 光源 3B 光学系 4 基板保持部 4C 基板 7 角度変更手段 P 光軸 1 film forming container 2 gas supply device 3A light source 3B optical system 4 substrate holding part 4C substrate 7 angle changing means P optical axis

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/3205 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01L 21/3205

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板保持部(4)を備えた成膜容器
(1)と、前記成膜容器(1)内の材料ガスに膜形成エ
ネルギーを供給する光源(3A)と、前記光源(3A)
からの出射光線束を平行な励起光線束に成形する光学系
(3B)とからなる光CVD装置であって、 前記光学系(3B)を光軸(P)に沿って配置した複数
のレンズ(L1),…,(L4)で構成し、終端のレンズ
(L4)を前記成膜容器(1)に固定設置して入射窓
(1A)を構成するとともに、前記基板(4C)の膜形
成面と前記励起光線束とのなす角度を変更する角度変更
手段(7)を設けてある光CVD装置。
1. A film forming container (1) having a substrate holding part (4), a light source (3A) for supplying film forming energy to a material gas in the film forming container (1), and the light source (3A). )
And an optical system (3B) for forming a bundle of rays of light emitted from the lens into a parallel bundle of excitation rays, wherein a plurality of lenses (wherein the optical system (3B) are arranged along an optical axis (P) ( L1), ..., (L4), the lens (L4) at the end is fixedly installed in the film forming container (1) to form an entrance window (1A), and the film forming surface of the substrate (4C). An optical CVD apparatus provided with an angle changing means (7) for changing an angle formed by the excitation light flux and the excitation light flux.
JP21575791A 1991-08-28 1991-08-28 Photo-cvd device Pending JPH0559557A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21575791A JPH0559557A (en) 1991-08-28 1991-08-28 Photo-cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21575791A JPH0559557A (en) 1991-08-28 1991-08-28 Photo-cvd device

Publications (1)

Publication Number Publication Date
JPH0559557A true JPH0559557A (en) 1993-03-09

Family

ID=16677727

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21575791A Pending JPH0559557A (en) 1991-08-28 1991-08-28 Photo-cvd device

Country Status (1)

Country Link
JP (1) JPH0559557A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831348A (en) * 1996-06-03 1998-11-03 Mitsubishi Denki Kabushiki Kaisha Secondary circuit device for wireless transmit-receive system and induction coil for wireless transmit-receive system
US7181179B2 (en) 2000-05-30 2007-02-20 Seiko Epson Corporation Hand-held electronic device
US7782040B2 (en) 2006-06-07 2010-08-24 Felica Networks, Inc. Information processing terminal and received voltage controlling method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5831348A (en) * 1996-06-03 1998-11-03 Mitsubishi Denki Kabushiki Kaisha Secondary circuit device for wireless transmit-receive system and induction coil for wireless transmit-receive system
US7181179B2 (en) 2000-05-30 2007-02-20 Seiko Epson Corporation Hand-held electronic device
US7782040B2 (en) 2006-06-07 2010-08-24 Felica Networks, Inc. Information processing terminal and received voltage controlling method

Similar Documents

Publication Publication Date Title
US5753320A (en) Process for forming deposited film
US5215588A (en) Photo-CVD system
US5229081A (en) Apparatus for semiconductor process including photo-excitation process
JP2002517082A (en) Gas manifold and photochemistry for uniform gas distribution
US4694777A (en) Apparatus for, and methods of, depositing a substance on a substrate
JPH0559557A (en) Photo-cvd device
JP3025545B2 (en) X-ray lithography mask and X-ray lithography exposure apparatus
US5681394A (en) Photo-excited processing apparatus and method for manufacturing a semiconductor device by using the same
CN1027549C (en) Microwave enhanced CVD system under magnetic field
JPH0149004B2 (en)
JPS63137174A (en) Device for forming functional deposited film by photochemical vapor growth method
JP3157241B2 (en) Optical CVD equipment
JP2000100728A (en) Crystal growth equipment
JP3093005B2 (en) Optical CVD equipment
JPH04305244A (en) Illuminator and light exciting processing device with the same
JPH0551752A (en) Photoassisted cvd system
JPH05186875A (en) Photo-assisted cvd device
JP3038413B2 (en) Film forming device by photo-CVD method
JPH05198512A (en) Optical cvd device
JP2551753B2 (en) Photo CVD equipment
JPH03276625A (en) Manufacturing equipment of semiconductor device
JPS59194426A (en) Optical cvd device
JP2814998B2 (en) Method and apparatus for forming semiconductor element film
JPH0239521A (en) Photo assisted cvd system
JPH03268320A (en) Optical cvd system