JPH0559555A - Surface treating device - Google Patents
Surface treating deviceInfo
- Publication number
- JPH0559555A JPH0559555A JP21892591A JP21892591A JPH0559555A JP H0559555 A JPH0559555 A JP H0559555A JP 21892591 A JP21892591 A JP 21892591A JP 21892591 A JP21892591 A JP 21892591A JP H0559555 A JPH0559555 A JP H0559555A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- gas
- vicinity
- processed
- mixed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は表面処理装置に係り、特
に減圧化学的気相成長（ＣＶＤ）法等に用いられる反応
室への反応性ガスの供給に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment apparatus, and more particularly to the supply of a reactive gas to a reaction chamber used in a low pressure chemical vapor deposition (CVD) method or the like.
【０００２】[0002]
【従来の技術】基板表面に半導体薄膜を形成する方法の
１つに、減圧下で薄膜形成を行う減圧ＣＶＤ法がある。2. Description of the Related Art One of methods for forming a semiconductor thin film on a substrate surface is a low pressure CVD method for forming a thin film under reduced pressure.
【０００３】この減圧ＣＶＤ法は、多数の半導体基板に
対して一度に薄膜形成を行うことができること、あるい
は常温程度の極めて低い温度でも薄膜形成を行うことが
できることから、半導体集積回路の形成工程においては
重要な方法の１つである。この方法は低い温度下での反
応であるため、反応性の高いガスを用いる事になる。従
って、一般に、薄膜形成を行う反応室内で、反応性ガス
を混合し反応を生起せしめるという方法がとられる。In the low pressure CVD method, a thin film can be formed on a large number of semiconductor substrates at once, or a thin film can be formed even at an extremely low temperature such as room temperature. Therefore, in the process of forming a semiconductor integrated circuit. Is one of the important methods. Since this method is a reaction at a low temperature, a highly reactive gas is used. Therefore, generally, a method of causing a reaction by mixing a reactive gas in a reaction chamber for forming a thin film is adopted.
【０００４】しかしながら近年、半導体基板の大口径化
に伴い、図３に示すように、反応容器内へのガス導入口
１，２と試料基板との距離も小さくなる一方である。こ
のため、ガス導入口付近の試料基板３上ではガスの混合
比が均一にならず、その結果、試料基板面内での膜厚の
均一性が、上部すなわちガス導入口から離れた位置にあ
る試料基板に比べて低下するという問題があった。However, in recent years, with the increase in diameter of semiconductor substrates, as shown in FIG. 3, the distance between the gas inlets 1 and 2 into the reaction container and the sample substrate is becoming smaller. Therefore, the gas mixing ratio is not uniform on the sample substrate 3 in the vicinity of the gas inlet, and as a result, the uniformity of the film thickness in the surface of the sample substrate is in the upper portion, that is, at a position away from the gas inlet. There was a problem that it was lower than that of the sample substrate.
【０００５】[0005]
【発明が解決しようとする課題】このように従来の減圧
ＣＶＤ装置においては、ガス導入口付近ではガスの混合
比が均一にならず、その結果、試料基板面内での膜厚の
均一性が、悪いという問題があった。As described above, in the conventional low pressure CVD apparatus, the gas mixing ratio is not uniform in the vicinity of the gas inlet, and as a result, the uniformity of the film thickness on the surface of the sample substrate is not uniform. , There was a problem of being bad.
【０００６】なお、このような均一性低下の問題は、薄
膜形成のみならず、２種類以上の反応性ガスを用いて行
うエッチング等においても同様であった。The problem of deterioration of uniformity is not limited to the thin film formation, but is the same not only in the etching using two or more kinds of reactive gases.
【０００７】本発明は、前記実情に鑑みてなされたもの
で、小型の装置においても均一で信頼性の高い表面処理
を行うことのできる表面処理装置を提供することを目的
とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a surface treatment apparatus capable of performing uniform and highly reliable surface treatment even in a small apparatus.
【０００８】[0008]
【課題を解決するための手段】そこで本発明では、反応
室内に複数の反応性ガスを供給し、表面処理を行う表面
処理装置において、複数のガス導入管が、先端近傍で互
いに所定の角度を成して交わるように構成している。Therefore, in the present invention, in a surface treatment apparatus for supplying a plurality of reactive gases into a reaction chamber to perform a surface treatment, a plurality of gas introduction pipes form a predetermined angle in the vicinity of the tip. It is configured to form and intersect.
【０００９】[0009]
【作用】上記構成によれば、複数のガス導入管が先端近
傍で、互いに所定の角度を成して交わるように近接せし
められているため、反応室へのガス供給口の近傍で複数
の反応性ガスが所定の角度をなして噴出せしめられて交
わり良好に混合されて、被処理基板表面に導かれ、ガス
供給口近傍の基板表面でも均一な薄膜形成あるいはエッ
チングを行うことが可能となる。According to the above construction, since the plurality of gas introduction pipes are arranged close to each other in the vicinity of the tip so as to intersect each other at a predetermined angle, a plurality of reaction gas is introduced in the vicinity of the gas supply port to the reaction chamber. The characteristic gas is ejected at a predetermined angle, intersects well, is mixed well, and is guided to the surface of the substrate to be processed, so that it is possible to perform uniform thin film formation or etching even on the substrate surface in the vicinity of the gas supply port.
【００１０】[0010]
【実施例】以下、本発明の実施例について、図面を参照
しつつ詳細に説明する。Embodiments of the present invention will now be described in detail with reference to the drawings.
【００１１】図１は、本発明実施例の減圧ＣＶＤ装置の
概略構成図である。FIG. 1 is a schematic configuration diagram of a low pressure CVD apparatus according to an embodiment of the present invention.
【００１２】この減圧ＣＶＤ装置は、反応容器１０内に
配設された基板支持台１４に、互いに所定の間隔を隔て
て平行にシリコン基板１３が配列され、これらのシリコ
ン基板１３に向けてＳｉＨ2 Ｃｌ2 を供給する第１の導
入管１１とＮＨ3 を導入する第２の導入管１２とがその
先端で直交するように設置されていることを特徴とする
ものである。In this low pressure CVD apparatus, silicon substrates 13 are arranged in parallel with each other at a predetermined interval on a substrate support 14 provided in a reaction vessel 10, and SiH 2 is directed toward these silicon substrates 13. It is characterized in that a first introduction pipe 11 for supplying Cl 2 and a second introduction pipe 12 for introducing NH 3 are installed so that their tips are orthogonal to each other.
【００１３】他の部分については従来の装置と同様に形
成されている。Other parts are formed in the same manner as the conventional device.
【００１４】すなわち、この装置は、１Torr反応容器１
０内に、被処理基板１３を載置するとともに基板を所定
の温度に維持するヒータを兼ねた基板支持台１４を配設
し、第１の導入管１１と第２の導入管１２との先端近傍
で、ガスの噴射方向を交差させ良好に混合させて、基板
支持台１４表面に載置された被処理基板１３上に導き、
シリコン薄膜を形成するようにしたものである。ここで
は、基板温度は８００℃程度に維持するとともに、第１
および第２のガス供給管からＳｉＨ2 Ｃｌ2 およびＮＨ
3 がそれぞれ１：１０の割合で供給されるとともにガス
排出口（図示せず）から排出され反応容器１０内が１To
rr程度の減圧状態を維持するようになっている。That is, this apparatus is equipped with a 1 Torr reaction vessel 1
A substrate support base 14 which also serves as a heater for placing the substrate 13 to be processed and maintaining the substrate at a predetermined temperature is provided in the front end of the first introducing pipe 11 and the second introducing pipe 12. In the vicinity, the injection directions of the gases are crossed and mixed well, and the mixed gas is guided onto the substrate 13 to be processed placed on the surface of the substrate support 14.
A silicon thin film is formed. Here, the substrate temperature is maintained at about 800 ° C. and the first
And SiH 2 Cl 2 and NH from the second gas supply pipe
3 was supplied at a ratio of 1:10 and discharged from a gas discharge port (not shown) so that the inside of the reaction vessel 10 was 1 To.
A reduced pressure of about rr is maintained.
【００１５】この減圧ＣＶＤ装置によれば、第１の導入
管１１と第２の導入管１２との先端近傍で、ガスの噴射
方向を交差させガスを良好に混合させて、被処理基板１
３上に導くことができるため、均一で信頼性の高い薄膜
形成を行う事が可能となる。なお、前記実施例では、第
１および第２のガス供給管を直交させるようにしたが、
図２(a) および(b) に示すように、互いに鋭角または鈍
角を成して交わるようにしても良い。ガス供給口と被処
理基板との間が比較的長い場合には、図２(a) に示すよ
うにを互いに鋭角をなすように設置するのがよい。一方
ガス供給口と被処理基板との間が比較的短い場合には、
図２(b) に示すように互いに鈍角をなして交わるように
設置するのがよい。According to this low pressure CVD apparatus, in the vicinity of the tips of the first introduction pipe 11 and the second introduction pipe 12, the gas injection directions are made to intersect with each other so that the gas is mixed well, and the substrate to be processed 1 is processed.
It is possible to form a uniform and highly reliable thin film because it can be guided to the upper side. In the above embodiment, the first and second gas supply pipes are arranged so as to be orthogonal to each other.
As shown in FIGS. 2A and 2B, they may intersect each other at an acute angle or an obtuse angle. When the distance between the gas supply port and the substrate to be processed is relatively long, it is preferable to install the so as to form an acute angle with each other as shown in FIG. On the other hand, when the distance between the gas supply port and the substrate to be processed is relatively short,
As shown in FIG. 2 (b), it is preferable to install them so that they intersect each other at an obtuse angle.
【００１６】さらにまた、図２(c) および(d) に示すよ
うに、３本以上のガス供給管を用いる場合にも適用可能
である。Furthermore, as shown in FIGS. 2 (c) and 2 (d), it is also applicable to the case where three or more gas supply pipes are used.
【００１７】また、前記実施例では縦型の減圧ＣＶＤ装
置について説明したが、横型等他の形の減圧ＣＶＤ装
置、さらにはエッチング装置等にも適用可能であること
はいうまでもない。Further, although the vertical type low pressure CVD apparatus has been described in the above embodiment, it is needless to say that the present invention can be applied to other types of low pressure CVD apparatus such as a horizontal type, and further to an etching apparatus.
【００１８】[0018]
【発明の効果】以上説明してきたように、本発明によれ
ば、複数のガス導入管を、先端近傍で、互いに所定の角
度を成して交わるように近接せしめ、複数の反応性ガス
が所定の角度をなして交わり良好に混合されて、被処理
基板表面に導かれるようにしているため、ガス供給口近
傍の基板表面でも均一な薄膜形成あるいはエッチングを
行うことが可能となる。As described above, according to the present invention, a plurality of gas introduction pipes are brought close to each other in the vicinity of the tip so as to intersect each other at a predetermined angle, so that a plurality of reactive gases are provided. Since they are mixed with each other at good angles and are mixed well, and are guided to the surface of the substrate to be processed, it is possible to perform uniform thin film formation or etching even on the substrate surface in the vicinity of the gas supply port.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明実施例の減圧ＣＶＤ装置を示す図。FIG. 1 is a diagram showing a low pressure CVD apparatus according to an embodiment of the present invention.
【図２】本発明の他の実施例のガス導入管の配置例を示
す図。FIG. 2 is a view showing an arrangement example of gas introduction pipes according to another embodiment of the present invention.
【図３】従来例の減圧ＣＶＤ装置を示す図。FIG. 3 is a diagram showing a conventional low pressure CVD apparatus.
１ ガス導入管 ２ ガス導入管 ３ 被処理基板 １０ 反応容器 １１ 第１のガス導入管 １２ 第２のガス導入管 １３ 被処理基板 １４ 基板支持台 DESCRIPTION OF SYMBOLS 1 gas introduction pipe 2 gas introduction pipe 3 processed substrate 10 reaction vessel 11 first gas introduction pipe 12 second gas introduction pipe 13 processed substrate 14 substrate support
Claims (1)
持台と、 前記反応室内に、ガス供給口の
近傍で複数の反応性ガスが所定の角度をなして交わり混
合されて、前記基板支持台上の被処理基板表面に導かれ
るように、先端が所定の角度をなして互いに近接せしめ
られた複数のガス導入管とを具備し、 減圧下で前記反応性ガスを混合せしめ、前記被処理基板
表面に薄膜形成あるいはエッチングを行う表面処理装
置。1. A reaction chamber, a substrate support table installed in the reaction chamber for supporting a substrate to be processed, and a plurality of reactive gases forming a predetermined angle in the reaction chamber near a gas supply port. It is provided with a plurality of gas introduction pipes whose tips are close to each other at a predetermined angle so that they are mixed and mixed and guided to the surface of the substrate to be processed on the substrate support, and the reactivity is reduced under reduced pressure. A surface treatment apparatus in which a gas is mixed and a thin film is formed or etched on the surface of the substrate to be treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21892591A JPH0559555A (en) | 1991-08-29 | 1991-08-29 | Surface treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21892591A JPH0559555A (en) | 1991-08-29 | 1991-08-29 | Surface treating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0559555A true JPH0559555A (en) | 1993-03-09 |
Family
ID=16727476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21892591A Pending JPH0559555A (en) | 1991-08-29 | 1991-08-29 | Surface treating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0559555A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081186A (en) * | 2005-09-15 | 2007-03-29 | Ricoh Co Ltd | Cvd device |
-
1991
- 1991-08-29 JP JP21892591A patent/JPH0559555A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007081186A (en) * | 2005-09-15 | 2007-03-29 | Ricoh Co Ltd | Cvd device |
| JP4698354B2 (en) * | 2005-09-15 | 2011-06-08 | 株式会社リコー | CVD equipment |
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