JPH055656A - Measurement of phase difference - Google Patents
Measurement of phase differenceInfo
- Publication number
- JPH055656A JPH055656A JP15663291A JP15663291A JPH055656A JP H055656 A JPH055656 A JP H055656A JP 15663291 A JP15663291 A JP 15663291A JP 15663291 A JP15663291 A JP 15663291A JP H055656 A JPH055656 A JP H055656A
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- Japan
- Prior art keywords
- transparent film
- phase difference
- light
- substrate
- measured
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光学的異方性をもつ透
明膜の位相差を測定する方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for measuring retardation of a transparent film having optical anisotropy.
【０００２】[0002]
【従来の技術】例えば液晶表示素子の基板面に形成する
配向膜等、光学的異方性をもつ透明膜の位相差（常光と
異常光との位相の差）の測定は、一般に、レーザを利用
する測定方法によって行なわれている。2. Description of the Related Art Generally, a laser is generally used to measure a phase difference (a phase difference between ordinary light and extraordinary light) of a transparent film having optical anisotropy such as an alignment film formed on a substrate surface of a liquid crystal display device. It depends on the measurement method used.
【０００３】このレーザによる位相差の測定は、従来、
図３に示すように、透明なガラス基板１１の上面に被測
定透明膜１０を形成し、この透明膜１０にレーザ１から
の光を偏光子２と光弾性変調器３とを介して入射させる
とともに、この透明膜１０を透過してガラス基板１１の
下面側に出射する光を検光子４を介して光検出器５によ
り検出し、この検出光の強度の変化に基づいて透明膜１
０の位相差を算出する方法で行なわれている。Conventionally, the measurement of the phase difference by this laser is
As shown in FIG. 3, a transparent film 10 to be measured is formed on the upper surface of a transparent glass substrate 11, and light from the laser 1 is incident on the transparent film 10 via a polarizer 2 and a photoelastic modulator 3. At the same time, the light passing through the transparent film 10 and emitted to the lower surface side of the glass substrate 11 is detected by the photodetector 5 via the analyzer 4, and the transparent film 1 is detected based on the change in the intensity of the detected light.
It is performed by the method of calculating the phase difference of 0.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の位相差測定方法では、光検出器５で検出される光
が、透明膜１０と、この透明膜１０を形成した基板１１
との両方を透過した光であるため、透明膜１０の位相差
を精度よく測定できないとい問題をもっていた。However, in the above-described conventional phase difference measuring method, the light detected by the photodetector 5 is the transparent film 10 and the substrate 11 on which the transparent film 10 is formed.
Since the light is transmitted through both of them, there is a problem that the phase difference of the transparent film 10 cannot be accurately measured.
【０００５】これは、透明膜１０を形成しているガラス
基板１１にも光学的異方性があるためであり、そのた
め、測定された位相差が、透明膜１０とガラス基板１１
との両方の位相差を合成した値になってしまう。This is because the glass substrate 11 on which the transparent film 10 is formed also has optical anisotropy. Therefore, the measured retardation is different from that of the transparent film 10 and the glass substrate 11.
It becomes a value that is a combination of both the phase difference between and.
【０００６】しかも、上記従来の位相差測定方法では、
被測定透明膜１０が例えば単分子膜からなる配向膜のよ
うな膜厚が薄くて位相差が小さい透明膜であると、検出
光の強度が極く僅かしか変化しないため、上記単分子膜
のような位相差が小さい透明膜の位相差測定は困難であ
るという問題ももっていた。Moreover, in the above conventional phase difference measuring method,
If the transparent film to be measured 10 is a transparent film having a small film thickness and a small phase difference, such as an alignment film made of a monomolecular film, the intensity of the detection light changes very little. There is also a problem that it is difficult to measure the phase difference of such a transparent film having a small phase difference.
【０００７】本発明は、透明膜の位相差を高精度に測定
することができ、しかも位相差が小さい透明膜の位相差
測定も可能な位相差測定方法を提供することを目的とし
たものである。An object of the present invention is to provide a phase difference measuring method capable of measuring a phase difference of a transparent film with high accuracy and capable of measuring a phase difference of a transparent film having a small phase difference. is there.
【０００８】[0008]
【課題を解決するための手段】本発明の位相差測定方法
は、反射板からなる基板の反射面に被測定透明膜を形成
し、レーザからの光を偏光子と光弾性変調器とを介して
前記透明膜に入射させるとともに、この透明膜を透過し
て前記基板の反射板面で反射され再び前記透明膜を透過
して出射する光を検光子を介して光検出器により検出
し、この検出光の強度の変化に基づいて前記透明膜の位
相差を算出することを特徴とするものである。According to the phase difference measuring method of the present invention, a transparent film to be measured is formed on a reflecting surface of a substrate composed of a reflecting plate, and light from a laser is passed through a polarizer and a photoelastic modulator. Light incident on the transparent film, transmitted through the transparent film, reflected by the reflecting plate surface of the substrate, and transmitted through the transparent film again to be emitted, and detected by a photodetector through an analyzer. It is characterized in that the phase difference of the transparent film is calculated based on the change in the intensity of the detected light.
【０００９】[0009]
【作用】本発明の位相差測定方法によれば、被測定透明
膜に入射した光が、この透明膜を透過するだけでその基
板は透過しないため、検光子を介して光検出器で検出さ
れる光は、透明膜を透過した光だけであり、したがっ
て、検出光の強度の変化に基づいて算出される位相差
は、基板の位相差を含まない透明膜だけの位相差であ
る。According to the phase difference measuring method of the present invention, the light incident on the transparent film to be measured is transmitted through the transparent film but not through the substrate, so that it is detected by the photodetector through the analyzer. The light that is transmitted is only the light that has passed through the transparent film. Therefore, the phase difference calculated based on the change in the intensity of the detected light is the phase difference of only the transparent film that does not include the phase difference of the substrate.
【００１０】また、この位相差測定方法では、透明膜に
入射した光が、この透明膜を透過してその基板の反射板
面で反射され、再び透明膜を透過して出射するため、光
検出器で検出される光は、透明膜を２度透過した光であ
り、したがって、検出光の強度が透明膜の位相差の２倍
の比率で変化するから、位相差が小さい透明膜の位相差
の測定も可能である。Further, in this phase difference measuring method, the light incident on the transparent film is transmitted through the transparent film, reflected by the reflecting plate surface of the substrate, and transmitted through the transparent film again to be emitted. The light detected by the detector is light that has passed through the transparent film twice, and therefore the intensity of the detected light changes at a rate of twice the phase difference of the transparent film. Can also be measured.
【００１１】[0011]
【実施例】以下、本発明の一実施例を図面を参照して説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【００１２】図１は位相差を測定するための装置の構成
図であり、この装置は、レーザ１、偏光子２、光弾性変
調器３、検光子４および光検出器５とで構成されてい
る。これらの構成部品１〜５は、従来の測定方法による
位相差測定に用いられているものと同じものであり、図
示しないが、上記レーザ１にはこれを駆動するためのレ
ーザ発振器が接続され、光弾性変調器３にはこれを駆動
するための光弾性変調用発振器が接続され、さらに光検
出器５には、その検出光の強度の変化に基づいて透過光
の位相差を算出する演算装置が接続されている。FIG. 1 is a block diagram of an apparatus for measuring a phase difference. This apparatus comprises a laser 1, a polarizer 2, a photoelastic modulator 3, an analyzer 4 and a photodetector 5. There is. These components 1 to 5 are the same as those used in the phase difference measurement by the conventional measurement method, and although not shown, a laser oscillator for driving the laser 1 is connected to the laser 1, A photoelastic modulator oscillator for driving the photoelastic modulator 3 is connected to the photoelastic modulator 3, and the photodetector 5 calculates a phase difference of transmitted light based on a change in intensity of the detected light. Are connected.
【００１３】なお、上記光弾性変調器３は、例えば結晶
体に弾性歪みを生じさせて光の屈折率を所定の方向に変
化させるもので、互いに直交する面に振動面をもった２
つの成分の光、つまり常光と異常光とに速度差を生じさ
せ、この速度差を一定の周波数で変化させる。The photoelastic modulator 3 is for changing the refractive index of light in a predetermined direction by causing an elastic strain in a crystal, for example, and has vibrating surfaces on the surfaces orthogonal to each other.
A speed difference is generated between light of one component, that is, ordinary light and extraordinary light, and this speed difference is changed at a constant frequency.
【００１４】また、図１において、１０は被測定透明膜
であり、この透明膜１０は基板１２の上に形成されてい
る。この基板１２は、表面を鏡面仕上げしたアルミニウ
ム板や、表面にアルミニウム膜等の反射膜を蒸着したガ
ラス板等からなる反射板であり、透明膜１０は、この基
板１２の反射面１２ａの上に形成されている。Further, in FIG. 1, 10 is a transparent film to be measured, and this transparent film 10 is formed on the substrate 12. The substrate 12 is a reflection plate made of an aluminum plate having a mirror-finished surface or a glass plate having a reflection film such as an aluminum film deposited on the surface thereof. The transparent film 10 is formed on the reflection surface 12 a of the substrate 12. Has been formed.
【００１５】そして、上記レーザ１は、被測定透明膜１
０を形成した基板１２の配置位置の一点に向けて、基板
１２の反射面１２ａに垂直な垂線Ｈに対し極く僅かな角
度だけ傾けて配置されており、偏光子２と光弾性変調器
３は、レーザ１から出力する光の光軸に対して垂直に配
置されている。また、光検出器５は、上記基板１２に対
するレーザ１０からの光の入射点に向けて、レーザ１の
傾き角と同じ角度だけ逆方向に傾けて配置されており、
検光子４は、基板１２の反射面１２ａで反射されて光検
出器５に入射する光の光軸に対して垂直に配置されてい
る。The laser 1 is a transparent film 1 to be measured.
The polarizer 2 and the photoelastic modulator 3 are arranged so as to be inclined at a very small angle with respect to a perpendicular line H perpendicular to the reflecting surface 12a of the substrate 12 toward one point where the substrate 12 where 0 is formed. Are arranged perpendicular to the optical axis of the light output from the laser 1. Further, the photodetector 5 is arranged so as to be tilted in the opposite direction by the same angle as the tilt angle of the laser 1 toward the incident point of the light from the laser 10 on the substrate 12.
The analyzer 4 is arranged perpendicular to the optical axis of the light reflected by the reflection surface 12a of the substrate 12 and incident on the photodetector 5.
【００１６】また、図２は、上記偏光子２と光弾性変調
器３および検光子４の光学軸と、被測定透明膜１０の光
学軸の方向を示しており、偏光子２は、その透過軸Ａ
を、光弾性変調器３の互いに直交する２つの光学軸（進
相軸と遅相軸）Ｂ1 ，Ｂ2 に対して４５゜の角度で交差
する方向に合わせて配置され、検光子４は、その透過軸
Ｃを、偏光子２の偏光軸Ａに対して４５゜の角度で交差
する方向（光弾性変調器３の一方の光学軸と平行な方
向）に合わせて配置されている。2 shows the directions of the optical axes of the polarizer 2, the photoelastic modulator 3 and the analyzer 4 and the optical axis of the transparent film 10 to be measured. The polarizer 2 transmits the light. Axis A
Are arranged so as to intersect with two mutually orthogonal optical axes (fast axis and slow axis) B1 and B2 of the photoelastic modulator 3 at an angle of 45 °, and the analyzer 4 The transmission axis C is aligned with the direction intersecting the polarization axis A of the polarizer 2 at an angle of 45 ° (direction parallel to one optical axis of the photoelastic modulator 3).
【００１７】また、被測定透明膜１０を形成した基板１
２は、その透明膜１０の光学軸（進相軸または遅相軸）
Ｄを、光弾性変調器３の２つの光学軸Ｂ1 ，Ｂ2 に対し
て４５゜の角度で交差する方向に合わせて配置される。The substrate 1 on which the transparent film 10 to be measured is formed
2 is an optical axis (fast axis or slow axis) of the transparent film 10
D is arranged so as to match the direction intersecting the two optical axes B1 and B2 of the photoelastic modulator 3 at an angle of 45 °.
【００１８】上記被測定透明膜１０は、例えば配向膜で
あり、この配向膜は、基板１２の上にＬＢ法によって単
分子が一方向に配列した単分子膜を被着させるか、ある
いは、基板１２の上にポリイミド等の配向材を塗布し、
その膜面をラビング処理して形成されている。この配向
膜の光学軸は、その配向方向であり、単分子膜では単分
子の配列方向、ラビング処理膜ではラビング方向であ
る。The transparent film to be measured 10 is, for example, an alignment film, and the alignment film is formed by depositing a monomolecular film in which single molecules are arranged in one direction by the LB method on the substrate 12, or by the substrate. Aligning material such as polyimide on 12
The film surface is formed by rubbing. The optical axis of this alignment film is the alignment direction, that is, the alignment direction of the single molecules in the monomolecular film, and the rubbing direction in the rubbing-treated film.
【００１９】そして、透明膜１０の位相差の測定は、上
記透明膜１０を形成した基板１２を所定位置に配置し、
レーザ１からの出力光を偏光子２と光弾性変調器３とを
介して透明膜１０に入射させるとともに、この透明膜１
０を透過した光を検光子４を介して光検出器５により検
出して、この検出光の強度の変化に基づいて透過光の常
光と異常光との位相差を演算により求める方法で行な
う。The phase difference of the transparent film 10 is measured by placing the substrate 12 on which the transparent film 10 is formed at a predetermined position,
The output light from the laser 1 is incident on the transparent film 10 via the polarizer 2 and the photoelastic modulator 3, and the transparent film 1
The light transmitted through 0 is detected by the photodetector 5 through the analyzer 4, and the phase difference between the ordinary light and the extraordinary light of the transmitted light is calculated based on the change in the intensity of the detected light.
【００２０】この位相差の測定について説明すると、上
記レーザ１からの出力光は、偏光子２を通って直線偏光
となり、さらに光弾性変調器３を通って被測定透明膜１
０にその表面から入射する。Explaining the measurement of the phase difference, the output light from the laser 1 passes through the polarizer 2 to become linearly polarized light, and further passes through the photoelastic modulator 3 to obtain the transparent film 1 to be measured.
It is incident on 0 from its surface.
【００２１】上記光弾性変調器３を通った光は、光弾性
変調器３の変調周波数に応じて偏光状態を変調された光
であり、この変調光の偏光状態は、直線偏光と楕円偏光
との間で変化する。The light passing through the photoelastic modulator 3 is light whose polarization state is modulated according to the modulation frequency of the photoelastic modulator 3, and the polarization states of this modulated light are linearly polarized light and elliptically polarized light. Varies between.
【００２２】この変調光が上記透明膜１０に入射する
と、この光の偏光状態が透明膜１０を透過する過程でこ
の透明膜１０の異方性により変化し、上記変調光が、そ
の常光と異常光との位相差に透明膜１０の異方性による
位相差が重畳した偏光状態の光となる。When this modulated light is incident on the transparent film 10, the polarization state of this light is changed by the anisotropy of the transparent film 10 in the process of passing through the transparent film 10, and the modulated light becomes abnormal with its ordinary light. The light is in a polarized state in which the phase difference due to the anisotropy of the transparent film 10 is superimposed on the phase difference with the light.
【００２３】また、透明膜１０を透過してその裏面に達
した光は、この透明膜１０の裏面に基板１２の反射面１
２ａが接しているため、この反射面１２ａで反射されて
再び透明膜１０を透過し、その過程でさらに偏光状態が
変化して、この透明膜１０の表面から出射する。The light transmitted through the transparent film 10 and reaching the back surface of the transparent film 10 is reflected by the reflection surface 1 of the substrate 12 on the back surface of the transparent film 10.
Since 2a is in contact, it is reflected by the reflecting surface 12a and again passes through the transparent film 10, and the polarization state is further changed in the process, and the light is emitted from the surface of the transparent film 10.
【００２４】上記透明膜１０を出射した光は、検光子４
に入射し、この検光子４を透過した偏光成分の光が光検
出器５に入射して、その強度を検出される。この光検出
器５で検出される光の強度は、透明膜１０の異方性によ
って生ずる常光と異常光との位相差に応じた値であり、
この値は、光弾性変調器３の変調周波数に重畳されてい
る。The light emitted from the transparent film 10 is analyzed by the analyzer 4
The light of the polarized component which is incident on the analyzer 4 and is transmitted through the analyzer 4 is incident on the photodetector 5 and its intensity is detected. The intensity of light detected by the photodetector 5 is a value corresponding to the phase difference between ordinary light and extraordinary light generated by the anisotropy of the transparent film 10,
This value is superimposed on the modulation frequency of the photoelastic modulator 3.
【００２５】そして、上記検光子４は、検出した光強度
に応じた信号を演算装置に出力する。この演算装置は、
光検出器５から入力された光強度信号から光弾性変調器
３の変調周波数に対応する成分を抽出し、この成分の光
強度から、光検出器５で検出された透過光の位相差（常
光と異常光との位相の差）を算出する。Then, the analyzer 4 outputs a signal according to the detected light intensity to the arithmetic unit. This computing device
A component corresponding to the modulation frequency of the photoelastic modulator 3 is extracted from the light intensity signal input from the photodetector 5, and the phase difference (normal light) of the transmitted light detected by the photodetector 5 is extracted from the light intensity of this component. And the phase difference between the extraordinary light).
【００２６】すなわち、上記位相差測定方法は、反射板
からなる基板１２の反射面１２ａに被測定透明膜１０を
形成し、レーザ１からの光を偏光子２と光弾性変調器３
とを介して被測定透明膜１０に入射させるとともに、こ
の透明膜１０を透過してその基板１２の反射面１２ａで
反射され再び透明膜１０を透過して出射する光を検光子
４を介して光検出器５により検出し、この検出光の強度
の変化に基づいて前記透明膜１０の位相差を算出するも
のである。That is, in the phase difference measuring method, the transparent film 10 to be measured is formed on the reflecting surface 12a of the substrate 12 made of a reflecting plate, and the light from the laser 1 is polarized by the polarizer 2 and the photoelastic modulator 3.
The light which is incident on the transparent film 10 to be measured via the, and is transmitted through the transparent film 10, reflected by the reflection surface 12a of the substrate 12 and transmitted through the transparent film 10 again to be emitted through the analyzer 4. The phase difference of the transparent film 10 is calculated based on the change in the intensity of the detected light detected by the photodetector 5.
【００２７】この位相差測定方法によれば、被測定透明
膜１０に入射した光が、この透明膜１０を透過するだけ
でその基板１２は透過しないため、検光子４を介して光
検出器５で検出される光は、透明膜１０を透過した光だ
けであり、したがって、検出光の強度の変化に基づいて
算出される位相差は、基板１２の位相差を含まない透明
膜１０だけの位相差であるから、上記透明膜１０の位相
差を高精度に測定することができる。According to this phase difference measuring method, the light incident on the transparent film 10 to be measured only passes through the transparent film 10 and does not pass through the substrate 12, and therefore the photodetector 5 via the analyzer 4. The light detected by is only the light that has passed through the transparent film 10, and therefore the phase difference calculated based on the change in the intensity of the detected light is only the position of the transparent film 10 that does not include the phase difference of the substrate 12. Because of the phase difference, the phase difference of the transparent film 10 can be measured with high accuracy.
【００２８】また、この位相差測定方法では、透明膜１
０に入射した光が、この透明膜１０を透過してその基板
１２の反射板面１２ａで反射され、再び透明膜１０を透
過して出射するため、光検出器５で検出される光は、透
明膜１０を２度透過した光であり、したがって、検出光
の強度が透明膜１０の位相差の２倍の比率で変化するか
ら、例えば単分子膜からなる配向膜のような、位相差が
小さい透明膜の位相差の測定も可能である。Further, in this phase difference measuring method, the transparent film 1
The light incident on 0 passes through the transparent film 10, is reflected by the reflection plate surface 12a of the substrate 12, and again passes through the transparent film 10 to be emitted, so that the light detected by the photodetector 5 is Since the light that has been transmitted through the transparent film 10 twice changes the intensity of the detection light at a rate of twice the phase difference of the transparent film 10, a phase difference such as an alignment film made of a monomolecular film is generated. It is also possible to measure the phase difference of a small transparent film.
【００２９】ただし、この位相差測定方法では、透明膜
１０を２度透過した光を光検出器５で検出しているた
め、検出光の強度の変化に基づいて算出される位相差の
値は、透明膜１０の位相差の２倍であり、この算出値の
１／２が、透明膜１０の正味の位相差である。However, in this phase difference measuring method, since the light that has transmitted through the transparent film 10 twice is detected by the photodetector 5, the value of the phase difference calculated based on the change in the intensity of the detected light is , The phase difference of the transparent film 10 is twice, and 1/2 of the calculated value is the net phase difference of the transparent film 10.
【００３０】なお、上記実施例では、被測定透明膜１０
を形成した基板１２を所定位置に配置して上記透明膜１
０の位相差を測定しているが、上記基板１２の配置位置
をずらしてその都度上述した位相差測定を行なえば、透
明膜１０の各部分についてその位相差を測定することが
できる。また、上記位相差測定方法は、配向膜に限ら
ず、光学的異方性をもった種々の透明膜の位相差測定に
利用できる。In the above embodiment, the transparent film 10 to be measured is used.
The transparent film 1 is formed by arranging the substrate 12 on which the film is formed at a predetermined position.
Although the phase difference of 0 is measured, the phase difference can be measured for each part of the transparent film 10 by shifting the arrangement position of the substrate 12 and performing the phase difference measurement each time. Further, the above-mentioned retardation measuring method can be used not only for the alignment film but also for measuring the retardation of various transparent films having optical anisotropy.
【００３１】さらに、被測定透明膜には、その光学軸の
方向が不明なものもあるが、その場合でも、上記透明膜
を形成した基板を所定位置に配置して、レーザ１からの
光を偏光子２と光弾性変調器３とを介して透明膜に入射
させ（ただし、光弾性変調器３は、偏光子２を透過した
直線偏光をそのまま透過させる無変調状態にしてお
く）、透明膜中を往復透過した出射光を検光子４を介し
て光検出器５により検出しながら、上記基板をその周方
向に回動させて透明膜の光学軸の向きを変化させて行け
ば、透明膜の光学軸が光弾性変調器３の光学軸Ｂ1 ，Ｂ
2 に対して４５゜の角度で交差する方向になったとき
に、検出光の強度が最大となるから、上記透明膜の光学
軸の方向を知ることができるし、また、この後に上記実
施例と同様な測定を行なえば、上記透明膜の位相差も測
定することができる。Further, although there are some transparent films to be measured whose optical axis direction is unknown, even in such a case, the substrate on which the transparent film is formed is arranged at a predetermined position so that the light from the laser 1 is emitted. A transparent film is made incident on the transparent film via the polarizer 2 and the photoelastic modulator 3 (however, the photoelastic modulator 3 is in an unmodulated state in which linearly polarized light transmitted through the polarizer 2 is directly transmitted). While the emitted light transmitted back and forth through the inside is detected by the photodetector 5 via the analyzer 4, the substrate is rotated in the circumferential direction to change the direction of the optical axis of the transparent film. Is the optical axis B1, B of the photoelastic modulator 3.
The intensity of the detected light becomes maximum when the direction intersects with 2 at an angle of 45 °, so that the direction of the optical axis of the transparent film can be known. The phase difference of the transparent film can also be measured by performing the same measurement as described above.
【００３２】[0032]
【発明の効果】本発明の位相差測定方法は、反射板から
なる基板の反射面に被測定透明膜を形成し、レーザから
の光を偏光子と光弾性変調器とを介して前記透明膜に入
射させるとともに、この透明膜を透過して前記基板の反
射板面で反射され再び前記透明膜を透過して出射する光
を検光子を介して光検出器により検出し、この検出光の
強度の変化に基づいて前記透明膜の位相差を算出するも
のであるから、透明膜の位相差を高精度に測定すること
ができ、しかも位相差が小さい透明膜の位相差測定も可
能である。According to the phase difference measuring method of the present invention, the transparent film to be measured is formed on the reflecting surface of the substrate made of the reflecting plate, and the light from the laser is transmitted through the polarizer and the photoelastic modulator. The light that is incident on the transparent film, is transmitted through the transparent film, is reflected by the reflecting plate surface of the substrate, and is transmitted through the transparent film again and is emitted by the photodetector through the analyzer, and the intensity of the detected light is detected. Since the retardation of the transparent film is calculated on the basis of the change, the retardation of the transparent film can be measured with high accuracy, and the retardation of the transparent film having a small retardation can be measured.
【図１】本発明の一実施例による位相差測定方法を示す
図。FIG. 1 is a diagram showing a phase difference measuring method according to an embodiment of the present invention.
【図２】偏光子と光弾性変調器および検光子の光学軸
と、被測定透明膜の光学軸の方向を示す図。FIG. 2 is a diagram showing directions of optical axes of a polarizer, a photoelastic modulator, and an analyzer and an optical axis of a transparent film to be measured.
【図３】従来の位相差測定方法を示す図。FIG. 3 is a diagram showing a conventional phase difference measuring method.
１…レーザ、２…偏光子、３…光弾性変調器、４…検光
子、５…光検出器、１０…被測定透明膜、１２…基板、
１２ａ…反射面。1 ... Laser, 2 ... Polarizer, 3 ... Photoelastic modulator, 4 ... Analyzer, 5 ... Photodetector, 10 ... Transparent film to be measured, 12 ... Substrate,
12a ... Reflective surface.
Claims (1)
定する方法において、反射板からなる基板の反射面に被
測定透明膜を形成し、レーザからの光を偏光子と光弾性
変調器とを介して前記透明膜に入射させるとともに、こ
の透明膜を透過して前記基板の反射面で反射され再び前
記透明膜を透過して出射する光を検光子を介して光検出
器により検出し、この検出光の強度の変化に基づいて前
記透明膜の位相差を算出することを特徴とする位相差測
定方法。Claim: What is claimed is: 1. A method for measuring a phase difference of a transparent film having optical anisotropy, wherein a transparent film to be measured is formed on a reflection surface of a substrate composed of a reflection plate, The light is made incident on the transparent film through a polarizer and a photoelastic modulator, and the light transmitted through the transparent film, reflected by the reflection surface of the substrate, and transmitted through the transparent film again to be emitted is an analyzer. And a phase difference measuring method for calculating the phase difference of the transparent film based on a change in the intensity of the detected light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15663291A JPH055656A (en) | 1991-06-27 | 1991-06-27 | Measurement of phase difference |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15663291A JPH055656A (en) | 1991-06-27 | 1991-06-27 | Measurement of phase difference |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH055656A true JPH055656A (en) | 1993-01-14 |
Family
ID=15631927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15663291A Pending JPH055656A (en) | 1991-06-27 | 1991-06-27 | Measurement of phase difference |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH055656A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11946809B2 (en) | 2021-08-25 | 2024-04-02 | Samsung Electronics Co., Ltd. | Polarization measuring device and method of fabricating semiconductor device using the same |
-
1991
- 1991-06-27 JP JP15663291A patent/JPH055656A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11946809B2 (en) | 2021-08-25 | 2024-04-02 | Samsung Electronics Co., Ltd. | Polarization measuring device and method of fabricating semiconductor device using the same |
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