JPH0553034A - Semiconductor optical device - Google Patents
Semiconductor optical deviceInfo
- Publication number
- JPH0553034A JPH0553034A JP23572691A JP23572691A JPH0553034A JP H0553034 A JPH0553034 A JP H0553034A JP 23572691 A JP23572691 A JP 23572691A JP 23572691 A JP23572691 A JP 23572691A JP H0553034 A JPH0553034 A JP H0553034A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor optical
- substrate
- optical device
- waveguide
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体光素子が、高速
にかつ安定に、光変調や光スイッチ、レーザ動作を行う
ための半導体光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor optical device for a semiconductor optical element to perform optical modulation, optical switch, and laser operation at high speed and stably.
【０００２】[0002]
【従来の技術】長距離・大容量光伝送や高速光情報処理
では、高速に光デバイスを駆動、制御することが、近年
ますます必要となってきている。そこでは光変調や光ス
イッチ、レーザ動作を高速に行うために、半導体光素子
と駆動系とのインピーダンスマッチングが必要で、マイ
クロ波回路やストリップラインなどのマイクロ波実装技
術が用いられている。通常、光変調や光スイッチに適用
する光デバイスは、逆方向にバイヤスして電界を印加す
ることが行われており、そのインピーダンスは非常に高
いので、チップ抵抗や金属被膜抵抗を素子に並列に用い
て駆動系とのインピーダンスのマッチングを行っている
（図３参照）。2. Description of the Related Art In long-distance, large-capacity optical transmission and high-speed optical information processing, it has become more and more necessary in recent years to drive and control optical devices at high speed. There, impedance matching between a semiconductor optical device and a drive system is required in order to perform optical modulation, an optical switch, and a laser operation at high speed, and a microwave packaging technique such as a microwave circuit or a strip line is used. Optical devices used for optical modulation and optical switches are usually biased in the opposite direction to apply an electric field, and their impedance is so high that a chip resistor or metal film resistor should be placed in parallel with the device. It is used to match the impedance with the drive system (see FIG. 3).
【０００３】なお、図３では、図示していないが、光変
調器34の裏面電極とチップ抵抗33の左端電極は結線され
ている。また、半導体レーザでは、順方向にバイヤスし
て電流を流すので、そのインピーダンスは非常に低く、
チップ抵抗や金属被膜抵抗を素子に直列に用いて駆動系
とのインピーダンスのマッチングを行っている（図４参
照）。光変調や光スイッチでは、消光比10 dBを得るの
に必要な電圧は、３〜５ボルトであり、通常用いられる
50オームの抵抗では、180 〜500 mWの電力が消費され、
発熱して一般に温度敏感な半導体光素子に多大な影響を
与える。また、半導体レーザでは、２〜５オームの抵抗
があるので、45〜48オームのチップ抵抗や金属被膜抵抗
を素子に直列に用いており、同程度に多大の電力が消費
され、発熱して半導体光素子に多大な影響を与え、ひい
ては素子の信頼性にも重大な影響を与える。また、従来
は前記発熱の影響を避けるためチップ抵抗をヒートシン
ク上に載せて発生する熱を逃がしていたが、駆動部分お
よび半導体光素子の間をリード線でつなぐ必要があり、
浮遊インダクタンス、浮遊容量も増加し、高周波特性に
不具合を生じる問題があった。Although not shown in FIG. 3, the back surface electrode of the optical modulator 34 and the left end electrode of the chip resistor 33 are connected. Further, in a semiconductor laser, the impedance is very low because the current is biased in the forward direction to pass the current.
A chip resistor or a metal film resistor is used in series with the element to match the impedance with the drive system (see FIG. 4). For optical modulation and optical switches, the voltage required to obtain an extinction ratio of 10 dB is 3 to 5 volts, which is normally used.
With a 50 ohm resistor, it consumes 180-500 mW of power,
It generates heat and has a great influence on a semiconductor optical device which is generally temperature sensitive. In addition, since the semiconductor laser has a resistance of 2 to 5 ohms, a chip resistance of 45 to 48 ohms or a metal film resistance is used in series with the element, and a large amount of power is consumed to the same extent and heat is generated to the semiconductor. It has a great influence on the optical element and, in turn, the reliability of the element. Further, in the past, in order to avoid the influence of the heat generation, the heat generated by mounting the chip resistor on the heat sink was released, but it is necessary to connect the driving portion and the semiconductor optical element with a lead wire,
There is a problem that stray inductance and stray capacitance also increase, causing a problem in high frequency characteristics.
【０００４】これまで用いられていたマイクロ波回路
は、基板に誘電体であるアルミナなどのセラミックスが
一般に使用されており、セラミックスは熱伝導率が低
く、例えばアルミナの熱伝導率は 0.04 (cal/cm sec de
g)で、半導体光素子のような消費電力の大きな素子には
不適当であった。また、一般に金属は熱伝導に優れてい
るが、電気的には導体であり、マイクロ波回路の基板に
は不向きである。また、従来前記発熱の影響を避けるた
め、チップ抵抗をヒートシンク上に載せて発生する熱を
逃がしていたが、半導体光素子とチップ抵抗および駆動
部分の間をリード線でつなぐ必要があり、高速動作させ
るには、駆動部分およびチップ抵抗と半導体光素子の間
を、できるだけ短くして浮遊インダクタンス、浮遊容量
の源であるリード線をなくすか、短くする必要があっ
た。In the microwave circuits that have been used so far, ceramics such as alumina, which is a dielectric, are generally used for the substrate, and the ceramics have a low thermal conductivity. For example, the thermal conductivity of alumina is 0.04 (cal / cal / cm sec de
In g), it was unsuitable for devices with large power consumption such as semiconductor optical devices. Further, generally, although metal is excellent in heat conduction, it is electrically a conductor and is not suitable for a substrate of a microwave circuit. Further, conventionally, in order to avoid the influence of the heat generation, the heat generated by mounting the chip resistor on the heat sink has been released, but it is necessary to connect the semiconductor optical element to the chip resistor and the driving portion with a lead wire, which enables high-speed operation. In order to achieve this, it is necessary to make the distance between the driving portion and the chip resistor and the semiconductor optical element as short as possible so as to eliminate or shorten the lead wire that is the source of the stray inductance and stray capacitance.
【０００５】[0005]
【発明が解決しようとする課題】本発明、浮遊インダク
タンスや浮遊容量が小さく、かつチップ抵抗や金属被膜
抵抗より発生する熱を効率よく放散して、安定に動作す
ることができ、長距離・大容量光伝送や光情報処理に用
いられる半導体光装置を提供することにある。According to the present invention, the stray inductance and stray capacitance are small, and the heat generated by the chip resistance and the metal film resistance can be efficiently dissipated to stably operate, and the long distance and large size can be achieved. It is to provide a semiconductor optical device used for capacitive optical transmission and optical information processing.
【０００６】[0006]
【課題を解決するための手段】本発明の半導体光装置
は、所定の厚さを持つ基板と、該基板の上に配置された
少なくとも１本のマイクロ波導波路と、該少なくとも１
本の導波路の両側に、所定の間隔だけ隔てて設けられた
導体とからなるコープレーナ導波回路により、制御、駆
動される半導体光素子において、該基板を合成ダイヤモ
ンドとし、かつその片側に前記マイクロ波導波路を介し
て、所定の値の金属被膜抵抗を、前記導体とマイクロ波
導波路の間に設けられた間隙の両側または片側に、かつ
該半導体光素子に並列に設置する。A semiconductor optical device according to the present invention comprises a substrate having a predetermined thickness, at least one microwave waveguide disposed on the substrate, and the at least one microwave waveguide.
In a semiconductor optical device controlled and driven by a coplanar waveguide circuit composed of conductors provided on both sides of a book waveguide at a predetermined distance, the substrate is made of synthetic diamond, and the micro diamond is provided on one side thereof. Through the wave waveguide, metal film resistors having a predetermined value are installed on both sides or one side of the gap provided between the conductor and the microwave waveguide and in parallel with the semiconductor optical device.
【０００７】または所定の厚さを持つ合成ダイヤモンド
基板と、該基板上に配置された少なくとも１本のマイク
ロ波導波路と、該少なくとも１本の導波路の裏面にある
電極部とからなる回路により、制御、駆動される半導体
光素子において、所定の値の金属被膜抵抗を、該少なく
とも１本の導波路の片側に、かつ該半導体光素子に直列
に設置する。Alternatively, a synthetic diamond substrate having a predetermined thickness, at least one microwave waveguide arranged on the substrate, and an electrode portion on the back surface of the at least one waveguide are used. In the controlled and driven semiconductor optical device, a metal film resistor having a predetermined value is installed on one side of the at least one waveguide and in series with the semiconductor optical device.
【０００８】[0008]
【作用】セラミックスと同程度に比抵抗が大きく、誘電
率は小さく、かつ熱伝導率は2.5 (cal/cm sec deg)と桁
違いに大きい気相合成ダイヤモンドを用いているので、
その上に搭載されたチップ抵抗や金属被膜抵抗より発生
する熱を効率よく放散することが可能となる。また、直
接ストリップラインやコプレーナ線路にチップ抵抗や金
属被膜抵抗が接続されているので、リード線は短くで
き、浮遊インダクタンス、浮遊容量を大幅に減らすこと
ができ、良好な高周波特性が得られる。このため半導体
光装置を安定に、かつ高速に動作させることができる。[Function] Since vapor-phase synthetic diamond is used, which has a resistivity as large as that of ceramics, a small permittivity, and a thermal conductivity of 2.5 (cal / cm sec deg), which is an order of magnitude larger.
It is possible to efficiently dissipate the heat generated by the chip resistor and the metal film resistor mounted on it. Further, since the chip resistor and the metal film resistor are directly connected to the strip line or the coplanar line, the lead wire can be shortened, the stray inductance and the stray capacitance can be greatly reduced, and good high frequency characteristics can be obtained. Therefore, the semiconductor optical device can be operated stably and at high speed.
【０００９】[0009]
【実施例】以下、図面を参照して本発明の実施例を詳細
に説明する。図１は、本発明の半導体光装置の一実施例
の構成を示す平面図であって、11は合成ダイヤモンドか
らなる基板、その上に導体からなる電極部12、薄膜抵抗
(100オーム) 13があり、14は光変調器である。２個の薄
膜抵抗13が光変調器14に並列につけられており、全体で
50オームとなるように、かつ熱容量は２倍になってい
る。誘電率の値より決まる中心導体15の幅および中心導
体15と電極部12の間隙は、それぞれ 350μm 、44μm で
ある。光変調器14はリード線で中心導体15につながって
おり、その下は金属を介してアースにおちている。基板
の厚さは 250〜300 μm である。この光変調器には、電
界が印加され、その吸収係数、屈折率が変調される。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a plan view showing the configuration of an embodiment of the semiconductor optical device of the present invention, in which 11 is a substrate made of synthetic diamond, an electrode portion 12 made of a conductor thereon, and a thin film resistor.
There are 13 (100 ohms) and 14 is an optical modulator. Two thin film resistors 13 are attached in parallel to the optical modulator 14,
The heat capacity is doubled to be 50 ohms. The width of the central conductor 15 determined by the value of the dielectric constant and the gap between the central conductor 15 and the electrode portion 12 are 350 μm and 44 μm, respectively. The optical modulator 14 is connected to the center conductor 15 by a lead wire, and the lower part thereof is grounded via a metal. The thickness of the substrate is 250-300 μm. An electric field is applied to this optical modulator, and its absorption coefficient and refractive index are modulated.
【００１０】図２は本発明の半導体光装置の他の実施例
の構成を示す平面図であって、21は合成ダイヤモンドか
らなる基板、その上に電極部22、薄膜抵抗(47 オーム)
23があり、24は半導体レーザである。１個の薄膜抵抗23
が半導体レーザに直列に接続されている。半導体レーザ
には、電流が注入され、所定の光が出射される。FIG. 2 is a plan view showing the configuration of another embodiment of the semiconductor optical device of the present invention, in which 21 is a substrate made of synthetic diamond, on which an electrode portion 22 and a thin film resistor (47 ohm) are provided.
There are 23 and 24 are semiconductor lasers. One thin film resistor 23
Are connected in series to the semiconductor laser. A current is injected into the semiconductor laser, and predetermined light is emitted.
【００１１】[0011]
【発明の効果】本発明ではセラミックスと同程度に比抵
抗が大きく、誘電率は小さく、かつ熱伝導率は 2.5 (ca
l/cm sec deg) と桁違いに大きい気相合成ダイヤモンド
を用いているので、その上に搭載されたチップ抵抗や金
属被膜抵抗より発生する熱を効率よく放散することが可
能となり、温度に敏感な半導体光装置を安定に動作する
ことができた。また、直接ストリップラインやコプレー
ナ線路に、チップ抵抗や金属被膜抵抗が接続されている
ので、リード線は短くでき、浮遊インダクタンス、浮遊
容量を大幅に減らすことができ、長距離・大容量光伝送
や光情報処理に用いられる半導体光装置において、良好
な高周波特性が得られた。According to the present invention, the specific resistance is as large as that of ceramics, the dielectric constant is small, and the thermal conductivity is 2.5 (ca).
l / cm sec deg), which is an order of magnitude larger than that of diamond, makes it possible to efficiently dissipate the heat generated by the chip resistor and metal film resistor mounted on it, making it sensitive to temperature. The stable semiconductor optical device could be operated stably. In addition, since the chip resistor and metal film resistor are directly connected to the strip line and coplanar line, the lead wire can be shortened, stray inductance and stray capacitance can be greatly reduced, and long-distance and large-capacity optical transmission and Good high frequency characteristics were obtained in a semiconductor optical device used for optical information processing.
【図１】本発明の半導体光装置の一実施例の構成を示す
平面図である。FIG. 1 is a plan view showing a configuration of an embodiment of a semiconductor optical device of the present invention.
【図２】本発明の半導体光装置の他の実施例の構成を示
す平面図である。FIG. 2 is a plan view showing the configuration of another embodiment of the semiconductor optical device of the present invention.
【図３】従来の半導体光装置の一例の構成を示す平面図
である。FIG. 3 is a plan view showing the configuration of an example of a conventional semiconductor optical device.
【図４】従来の半導体光装置の他の例の構成を示す平面
図である。FIG. 4 is a plan view showing the configuration of another example of the conventional semiconductor optical device.
11, 21 気相合成ダイヤモンド基板 31, 41 セラミック基板 12, 22, 32, 42 電極部 13, 23, 43 薄膜抵抗 14, 34 光変調器 24, 44 半導体レーザ 15 中心導体 33 チップ抵抗。 11, 21 Vapor phase synthetic diamond substrate 31, 41 Ceramic substrate 12, 22, 32, 42 Electrode part 13, 23, 43 Thin film resistor 14, 34 Optical modulator 24, 44 Semiconductor laser 15 Center conductor 33 Chip resistor.
Claims (2)
置された少なくとも１本のマイクロ波導波路と、該少な
くとも１本の導波路の両側に、所定の間隔だけ隔てて設
けられた導体とからなるコープレーナ導波回路により、
制御、駆動される半導体光素子において、該基板を合成
ダイヤモンドとし、かつその片側に前記マイクロ波導波
路を介して、所定の値の金属被膜抵抗を、前記導体とマ
イクロ波導波路の間に設けられた間隙の両側または片側
に、かつ該半導体光素子に並列に設置したことを特徴と
する半導体光装置。1. A substrate having a predetermined thickness, at least one microwave waveguide arranged on the substrate, and provided on both sides of the at least one waveguide at a predetermined distance. With a coplanar waveguide circuit consisting of a conductor,
In the controlled and driven semiconductor optical device, the substrate is made of synthetic diamond, and a metal film resistor having a predetermined value is provided on one side of the substrate through the microwave waveguide between the conductor and the microwave waveguide. A semiconductor optical device, which is installed on both sides or one side of a gap and in parallel with the semiconductor optical element.
と、該基板上に配置された少なくとも１本のマイクロ波
導波路と、該少なくとも１本の導波路の裏面にある電極
部とからなる回路により、制御、駆動される半導体光素
子において、所定の値の金属被膜抵抗を、該少なくとも
１本の導波路の片側に、かつ該半導体光素子に直列に設
置したことを特徴とする半導体光装置。2. A circuit comprising a synthetic diamond substrate having a predetermined thickness, at least one microwave waveguide arranged on the substrate, and an electrode portion on the back surface of the at least one waveguide. In the controlled and driven semiconductor optical device, a metal film resistor having a predetermined value is provided on one side of the at least one waveguide and in series with the semiconductor optical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23572691A JPH0553034A (en) | 1991-08-23 | 1991-08-23 | Semiconductor optical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23572691A JPH0553034A (en) | 1991-08-23 | 1991-08-23 | Semiconductor optical device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0553034A true JPH0553034A (en) | 1993-03-05 |
Family
ID=16990322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23572691A Pending JPH0553034A (en) | 1991-08-23 | 1991-08-23 | Semiconductor optical device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0553034A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257435A (en) * | 2000-03-08 | 2001-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter |
-
1991
- 1991-08-23 JP JP23572691A patent/JPH0553034A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001257435A (en) * | 2000-03-08 | 2001-09-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical transmitter |
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