JPH0552052B2 - - Google Patents
Info
- Publication number
- JPH0552052B2 JPH0552052B2 JP62047563A JP4756387A JPH0552052B2 JP H0552052 B2 JPH0552052 B2 JP H0552052B2 JP 62047563 A JP62047563 A JP 62047563A JP 4756387 A JP4756387 A JP 4756387A JP H0552052 B2 JPH0552052 B2 JP H0552052B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- alignment
- wafer
- exposure
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 21
- 230000000903 blocking effect Effects 0.000 claims description 6
- 230000009467 reduction Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 1
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体製造装置の一つである縮小投
影露光装置に係り、特に複雑多岐にわたるプロセ
スに対し良好な信号コントラストを得るに好適な
アライメント装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reduction projection exposure apparatus, which is one of semiconductor manufacturing equipment, and in particular to an alignment system suitable for obtaining good signal contrast for various complex processes. Regarding equipment.
従来の装置は、縮小レンズの露光領域の外周部
を用い原画側からウエハ上に形成されたアライメ
ントマークを単一波長光にて照明する。該マーク
の干渉像は、縮小レンズを経由して戻り、アライ
メント光学系によつて走査スリツト上に結像され
る。該スリツト走査位置は測長器により正確に監
視され、アラメントマークの位置座標を正確に検
知できるようになつている。
A conventional apparatus illuminates an alignment mark formed on a wafer from the original image side with single wavelength light using the outer periphery of the exposure area of a reduction lens. The interference image of the mark returns via the reduction lens and is imaged onto the scanning slit by the alignment optics. The slit scanning position is accurately monitored by a length measuring device, so that the position coordinates of the alignment mark can be accurately detected.
上記、従来技術ではアライメントマークを照明
する光を、原画をウエハに焼付露光する超高圧水
銀ランプから取出している為に、当該照明光の波
長が限定されており、（例えば、ｅ線546nｍ及び
ｄ線578nｍ）、その結果、アライメントマークを
形成している段差とレジスト膜厚の組合わせによ
つては、干渉のコントラストが低下し、アライメ
ント精度を悪化させるという問題があつた。
In the above-mentioned conventional technology, the light for illuminating the alignment mark is extracted from an ultra-high pressure mercury lamp that prints and exposes the original image onto the wafer, so the wavelength of the illumination light is limited (for example, e-line 546nm and d-ray). As a result, depending on the combination of the step forming the alignment mark and the resist film thickness, there was a problem in that the contrast of interference decreased and the alignment accuracy deteriorated.
また、微細パターン形成の障害となる露光光の
ウエハからの反射を防止するためにウエハに形成
される反射防止膜やレジスト中に混入される露光
光吸収剤の故にアライメント光の低コントラスト
化が生じ、アライメント精度が低下するという問
題があつた。 In addition, the contrast of the alignment light is reduced due to the anti-reflection film formed on the wafer to prevent reflection of the exposure light from the wafer, which is an obstacle to fine pattern formation, and the exposure light absorbing agent mixed into the resist. , there was a problem that alignment accuracy decreased.
上記、特定波長でのコントラスト低下を防止す
る目的で、他の波長を用いて検出を行なう際、縮
小レンズの色収差を補正するために、ウエハ位置
を露光位置から移動し該波長に対してアラミンメ
ント光学系のフオーカス調整を行うこともある。
この場合はアライメント終了後に露光を行なう際
に再びウエハ位置を元に戻す動作が必要となり、
時間損失を生じ装置のスループツトを低下させる
という問題と、該動作に伴なう機械的位置誤差が
アライメント精度を低下させるという問題があつ
た。 As mentioned above, in order to prevent contrast reduction at a specific wavelength, when performing detection using another wavelength, the wafer position is moved from the exposure position to correct the chromatic aberration of the reduction lens. Sometimes the focus of the system is adjusted.
In this case, when performing exposure after alignment, it is necessary to return the wafer to its original position.
There are problems in that time is lost and the throughput of the device is reduced, and mechanical position errors associated with the operation reduce alignment accuracy.
本発明の目的は、上記問題を解決し高精度でか
つスループツトの高いアラミメント装置を提供す
ることにある。 SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide an aluminament device with high precision and high throughput.
本発明によれば、ウエハのアライメントマーク
の像を露光光と波長が異なる第１の光により第１
の位置に、露光光及び第１の光と波長が異なる第
２の光により第２の位置にそれぞれウエハへの原
画投影用投影レンズを介して生じさせ、その第１
及び第２の位置における像を別々の光路を通して
共通の位置に結像させ、その一方の光路を通る光
を共通の位置に入射させたときに他方の光路を通
つて共通の位置に入射する光を遮断するシヤツタ
形光遮断手段を備え、共通の位置に結像された像
を共通の検出器により検出するように構成され
る。
According to the present invention, an image of an alignment mark on a wafer is first captured using first light having a wavelength different from that of exposure light.
The exposure light and the second light having a wavelength different from the first light are used to project the original image onto the wafer at the second position, respectively, and the first light is projected onto the wafer.
and images at a second position are formed at a common position through separate optical paths, and when light passing through one optical path is incident on the common position, light is incident on the common position through the other optical path. It is provided with a shutter-type light blocking means for blocking the light, and is configured so that images formed at a common position are detected by a common detector.
このような本発明によれば、アライメント光で
ある第１及び第２の光は互いに波長が異なり、か
つ露光光とも波長が異なるので、アライメントマ
ークを形成している段差とウエハ上のレジスト膜
厚とのいろいろな組合せに対して高アライメント
精度が保証され、しかも収差補正のためにウエハ
を投影露光光軸方向に移動しなくともよいことか
ら高スループツトが期待される。
According to the present invention, the first and second lights, which are alignment lights, have different wavelengths from each other and also from the exposure light, so that the difference between the steps forming the alignment mark and the resist film thickness on the wafer can be adjusted. High alignment accuracy is guaranteed for various combinations of the above, and high throughput is expected since there is no need to move the wafer in the direction of the projection exposure optical axis for aberration correction.
また、第１及び第２の光は共通の検出器によつ
て検出されることから、それぞれ別々の検出器に
より検出される場合に生じる、互いに特性の同じ
検出器を用いる必要があるとか、各検出器の経時
変化特性を揃えるための補正が必要であるといつ
た厄介な問題が解決される。 In addition, since the first and second lights are detected by a common detector, there are problems such as the need to use detectors with the same characteristics, which would occur if the first and second lights were detected by separate detectors. The vexing problem of the need for correction to align the aging characteristics of the detectors is resolved.
さらに、一方の光路を通る光を共通の位置に入
射させたときに他方の光路を通つて共通の位置に
入射する光を遮断するようになつているため、換
言すれば、第１の光と第２の光は時間的にずれて
共通の検出器によつて検出されるため、検出器が
共通でありながら、両像の位置ずれや両像による
検出器出力信号強度の違いの補正は第１の光と第
２の光をそれぞれ別々の検出器によつて検出され
る場合のように電気的に補正可能であるという利
点が与えられる。 Furthermore, when the light passing through one optical path is incident on a common position, the light passing through the other optical path and entering the common position is blocked, so in other words, the first light The second light is detected by a common detector with a time lag, so even though the detector is common, it is necessary to correct the positional shift between the two images and the difference in the detector output signal strength between the two images. This provides the advantage that the first light and the second light can be electrically corrected as if they were each detected by separate detectors.
加えて、光遮断手段はシヤツタ形であることか
ら、アライメント光の減衰や一方のアライメント
光路を通るべき光の他方の光路への漏洩の問題が
解決され、より高精度のアライメントが可能とな
る。 In addition, since the light blocking means is shutter-shaped, problems such as attenuation of the alignment light and leakage of light that should pass through one alignment optical path to the other optical path are solved, and alignment with higher precision becomes possible.
以下、本発明の一実施例を第１図により説明す
る。ウエハ２上に形成されたアライメントマーク
１は照明光学系（図示せず）からの、単色光にて
照明される。アライメントマークにて反射、干
渉、そして回折を受けた光束は、縮小レンズ３を
通り原画４の上方５ａ及び５ｂの位置に、アライ
メントマークの実像が結像される。
An embodiment of the present invention will be described below with reference to FIG. Alignment mark 1 formed on wafer 2 is illuminated with monochromatic light from an illumination optical system (not shown). The light beam that has been reflected, interfered, and diffracted by the alignment mark passes through the reduction lens 3 and forms real images of the alignment mark at positions 5a and 5b above the original image 4.
原画４とウエハ２は、露光波長λ0に対してベス
トフオーカスの位置に保たれている。従つてλ0と
異なるアライメント波長λ，λ′に対するアライメ
ントマークの実像は、縮小レンズの縦色収差のた
めに原画上とは異なる位置５ａ及び５ｂに結像さ
れる。 The original image 4 and the wafer 2 are maintained at the best focus position with respect to the exposure wavelength λ 0 . Therefore, the real images of the alignment marks for alignment wavelengths λ and λ' different from λ 0 are formed at positions 5a and 5b different from those on the original image due to the longitudinal chromatic aberration of the reduction lens.
５ａおよび５ｂは仮想位置であつて、実際のア
ライメントマーク１の実像は原画の下方に設置さ
れた折返しミラー６にて反射され、更にビームス
プリツタ７によつて二光束に分割され共役位置８
ａ，８ｂ及び８a′，８b′に結像される。対物レン
ズ９は点８ａからの光をコリメートし、結像レン
ズ１０との組合せで点８ａの像を固定スリツト１
１上に結像させる。点８ｂの像は１１上ではデイ
フオーカス状態となり検出されない。 5a and 5b are virtual positions, and the real image of the actual alignment mark 1 is reflected by a folding mirror 6 installed below the original image, and is further split into two beams by a beam splitter 7, which is then sent to a conjugate position 8.
a, 8b and 8a', 8b'. The objective lens 9 collimates the light from the point 8a, and in combination with the imaging lens 10 fixes the image of the point 8a through the slit 1.
1. The image of point 8b becomes defocused on point 11 and is not detected.
一方、対物レンズ９′と結像レンズ１０との組
合わせは波長λ′に対応する像位置、束ち８b′に対
してのみ結像関係にある。 On the other hand, the combination of the objective lens 9' and the imaging lens 10 has an imaging relationship only for the image position corresponding to the wavelength λ', the bundle 8b'.
１２，１２′は反射ミラー、１３，１３′はそれ
ぞれ波長λ，λ′に対応した照明光導入用のビーム
スプリツタである。 12 and 12' are reflecting mirrors, and 13 and 13' are beam splitters for introducing illumination light corresponding to wavelengths λ and λ', respectively.
波長選択用ミラー１４はアライメント波長λ及
びλ′を選択するシヤツタ形のもので、概略、扇形
又は半円形の形状をなし軸中心に回転可能であ
り、光の反射及び透過を制御することができる。
この波長選択ミラー１４の故に、一方のアライメ
ント波長光による十分なコントラストが得られな
い場合には、他方のアライメント波長光によるア
ライメントに迅速に切換えることができる。ま
た、このような両アライメント光の選択使用だけ
でなく、時間的にずれて検出される両アライメン
ト光による検出器出力信号の合成信号を用いてア
ライメントマークの検出を行うことも可能であ
る。このようにすれば、光の波長程度に薄いウエ
ハ２上のレジスト膜の厚さむらにもとづく干渉効
果の影響が低減され、それによつてそのアライメ
ントマークの正確な位置検出が可能になる（詳細
には特開昭60−80223号公報参照）。 The wavelength selection mirror 14 is a shutter type that selects the alignment wavelengths λ and λ', has a roughly fan-shaped or semicircular shape, and is rotatable around its axis, and can control reflection and transmission of light. .
Because of this wavelength selection mirror 14, if sufficient contrast cannot be obtained with one alignment wavelength light, alignment can be quickly switched to the other alignment wavelength light. In addition to selectively using both alignment lights as described above, it is also possible to detect an alignment mark using a composite signal of detector output signals from both alignment lights detected with a time lag. In this way, the interference effect caused by the uneven thickness of the resist film on the wafer 2, which is as thin as the wavelength of light, is reduced, thereby making it possible to accurately detect the position of the alignment mark. (see Japanese Patent Application Laid-Open No. 1983-80223).
ポリゴンミラー１５は固定スリツト１１上を高
速で像走査し、その回転角は別途モニタ（図示せ
ず）され像の移動座標を精度良く検知し得る。 The polygon mirror 15 scans the image on the fixed slit 11 at high speed, and its rotation angle is separately monitored (not shown) so that the moving coordinates of the image can be detected with high accuracy.
固定スリツト１１を通過した光は光電子増倍管
からなる検出器１６により光電変換され、信号処
理される。 The light passing through the fixed slit 11 is photoelectrically converted by a detector 16 consisting of a photomultiplier tube and subjected to signal processing.
６〜１６に到るシステムは通常、露光光軸に対
し直角方向に２つ配置され、ウエハ２のＸ、Ｙ座
標に対応してアライメントが実施される。 Generally, two systems 6 to 16 are arranged perpendicular to the exposure optical axis, and alignment is performed corresponding to the X and Y coordinates of the wafer 2.
本実施例によれば、波長λ，λ′に対するアライ
メント光学系は独立であり、その切換は波長選択
ミラーの動作のみによつて行なわれる結果、原画
縮小レンズ、そしてウエハの相対位置関係を全く
保つた状態にてアライメントを実施できる効果が
ある。 According to this embodiment, the alignment optical systems for wavelengths λ and λ' are independent, and switching is performed only by the operation of the wavelength selection mirror, so that the relative positional relationship between the original image reduction lens and the wafer is maintained at all. This has the effect of allowing alignment to be carried out in the same state.
第２図に波長選択に関する他の一実施例を示
す。シヤツタ１７及び１７′は夫々の対物レンズ
９，９′と夫々のビームスプリツタ１３，１３′の
間に置かれ、その動作は同期しており一方の光路
が開くと同時に他方が閉じるように制御される。
両光路はビームスプリツタ１８により合成され、
ポリゴンミラー１５（第１図）に導かれる。 FIG. 2 shows another embodiment regarding wavelength selection. The shutters 17 and 17' are placed between the respective objective lenses 9 and 9' and the respective beam splitters 13 and 13', and their operations are synchronous and controlled so that one optical path opens and the other closes at the same time. be done.
Both optical paths are combined by a beam splitter 18,
It is guided to a polygon mirror 15 (FIG. 1).
本実施例によれば、ウエハ上のアライメントマ
ークが常に波長λ又はλ′なる単色光で照明され、
また検出光学系統も常に該単色光に光束だけしか
存在しないために、ゴーストの少ないコントラス
トの高い信号を得られる効果がある。 According to this embodiment, the alignment mark on the wafer is always illuminated with monochromatic light of wavelength λ or λ',
Furthermore, since only the light beam of the monochromatic light is always present in the detection optical system, it is possible to obtain a signal with high contrast and less ghosting.
また、第１図にて１４は結像の像品質に直接関
与するため、光学反射面及び可動部分には高い精
度が求められる反面、第２図の実施例における唯
一の可動部分たるシヤツタ１７，１７′にはその
ような心配がなく、機械的安定性が更に向上し良
好なアライメント信号が得られる効果がある。 Further, in FIG. 1, 14 is directly involved in the quality of the image formed, so high precision is required for the optical reflection surface and the movable parts. 17' does not have such concerns, and has the effect of further improving mechanical stability and obtaining a good alignment signal.
第３図に本発明のうち、アライメント照明に関
する部分の一実施例を示す。キセノンランプに代
表される連続スペクトル光源１９及び補助ミラー
２０から発せられた光束はレンズ２１によりコリ
メートされたあと、バンドパスフイルタ２２によ
つて単色化され、レンズ２３にて再び集光されオ
プテイカルフアイバ２４に導かれる。該フアイバ
の他の端面は第１図に示すビームスプリツタ１３
に接続される。他の一つのアライメント用単色光
は、上記と対称に配置された補助ミラー２０′、
バンドパスフイルタ２２′およびレンズ２１′，２
２′により得られる。 FIG. 3 shows an embodiment of the portion of the present invention relating to alignment illumination. The light flux emitted from a continuous spectrum light source 19, typically a xenon lamp, and an auxiliary mirror 20 is collimated by a lens 21, then made monochromatic by a bandpass filter 22, and condensed again by a lens 23 to an optical fiber. 24. The other end face of the fiber is a beam splitter 13 shown in FIG.
connected to. Another monochromatic light for alignment is an auxiliary mirror 20' arranged symmetrically to the above,
Bandpass filter 22' and lenses 21', 2
2'.
本実施例によれば一つの光源から異なる２つの
波長を取り出すことができ、波長の選択もバンド
パスフイルタを交換するだけで、簡便でコンパク
トな照明装置を構成できる効果がある。 According to this embodiment, two different wavelengths can be extracted from one light source, and the wavelength can be selected by simply replacing the bandpass filter, which has the effect of configuring a simple and compact illumination device.
第４図に照明部分に関する他の一実施例を示
す。連続スペクトル光源１９から放射された光束
は、補助ミラー２０，２０′、コンデンサレンズ
２５，２５′にて分光器の入射スリツト２６，２
６′の上に集光される。分散素子（回折格子、プ
リズム等）２７，２７′により分散された光は出
射スリツト２９，２９′にて単色化され、オプテ
イカルフアイバ２４に導かれる。 FIG. 4 shows another embodiment regarding the illumination part. The light beam emitted from the continuous spectrum light source 19 passes through auxiliary mirrors 20, 20' and condenser lenses 25, 25' to the entrance slits 26, 2 of the spectrometer.
The light is focused on 6'. The light dispersed by the dispersion elements (diffraction grating, prism, etc.) 27, 27' is made monochromatic by the output slits 29, 29' and guided to the optical fiber 24.
第４図の実施例によれば、波長の選択は分散素
子２７，２７′の回転により連続的に可変でき、
また単色性も分光器の入、出射スリツトの幅を制
御することにより自由に可変できる。その結果、
ウエハ上に形成されたターゲツトマークのプロセ
スに対する検出能力を更に高めることができる効
果がある。 According to the embodiment of FIG. 4, the selection of wavelength can be varied continuously by rotating the dispersive elements 27, 27'.
Furthermore, monochromaticity can be freely varied by controlling the widths of the entrance and exit slits of the spectrometer. the result,
This has the effect of further increasing the ability to detect the target mark formed on the wafer during the process.
本発明によれば、いろいろなレジストに対して
高アライメント精度と高スループツトが保証され
ると共に、第１及び第２の光を別々の検出器によ
り検出する場合に生じる、両検出器の特性を揃え
る必要があるという厄介な問題が解決され、さら
に共通の検出器を用いながらも、２つの検出器を
用いる場合と同様に両像の位置ずれや両像による
検出器出力信号強度の違いの補正が容易であると
いう利点が与えられると共に、光遮断手段がシヤ
ツタ形であることからより高精度のアライメント
が可能となる。
According to the present invention, high alignment accuracy and high throughput are guaranteed for various resists, and the characteristics of both detectors, which occur when the first and second lights are detected by separate detectors, are made uniform. Furthermore, even though a common detector is used, it is possible to correct the positional deviation of both images and the difference in detector output signal strength between the two images, just as when using two detectors. This has the advantage of being easy, and since the light blocking means is in the form of a shutter, alignment with higher precision is possible.
第１図は本発明の一実施例のアライメント検出
部の光学系統図、第２図は第１図の波長選択部分
に関する他の一実施例である。第３図は本発明の
ターゲツトマーク照明に関する光学系統図の一実
施例、第４図は他の一実施例をそれぞれ示す。
１……ターゲツトマーク、９……対物レンズ、
１０……結像レンズ、１１……固定スリツト、１
５……ポリゴンミラー、１９……連続スペクトル
光源、２２……バンドパスフイルタ、２３……分
散素子。
FIG. 1 is an optical system diagram of an alignment detection section according to one embodiment of the present invention, and FIG. 2 is another embodiment regarding the wavelength selection section of FIG. 1. FIG. 3 shows one embodiment of an optical system diagram regarding target mark illumination of the present invention, and FIG. 4 shows another embodiment. 1...Target mark, 9...Objective lens,
10...Imaging lens, 11...Fixed slit, 1
5... Polygon mirror, 19... Continuous spectrum light source, 22... Bandpass filter, 23... Dispersion element.
Claims (1)
ハに投影し、このウエハに形成されたアライメン
トマークを上記投影レンズを介して検出する投影
露光装置において、上記アライメントマークの像
を上記露光光と波長が異なる第１の光により第１
の位置に、上記露光光及び第１の光と波長が異な
る第２の光により第２の位置にそれぞれ上記投影
レンズを介して生じさせ、その第１及び第２の位
置における像を別々の光路を通して共通の位置に
結像させ、その一方の光路を通る光を上記共通の
位置に入射させたときに他方の光路を通つて上記
共通の位置に入射する光を遮断するシヤツタ形光
遮断手段を備え、上記共通の位置に結像された像
を共通の検出器により検出するように構成したこ
とを特徴とするアライメント装置。1. In a projection exposure apparatus that projects an original image onto a wafer using exposure light through a projection lens, and detects an alignment mark formed on the wafer through the projection lens, the image of the alignment mark is projected at a wavelength different from that of the exposure light. the first light by a different first light.
, the exposure light and a second light having a wavelength different from that of the first light are generated at a second position through the projection lens, and the images at the first and second positions are transmitted through separate optical paths. shutter type light blocking means for forming an image at a common position through the optical path, and blocking light passing through the other optical path and entering the common position when light passing through one of the optical paths is incident on the common position. An alignment device comprising: an alignment device configured to detect images formed at the common position by a common detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62047563A JPS63215039A (en) | 1987-03-04 | 1987-03-04 | Alignment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62047563A JPS63215039A (en) | 1987-03-04 | 1987-03-04 | Alignment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63215039A JPS63215039A (en) | 1988-09-07 |
| JPH0552052B2 true JPH0552052B2 (en) | 1993-08-04 |
Family
ID=12778684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62047563A Granted JPS63215039A (en) | 1987-03-04 | 1987-03-04 | Alignment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63215039A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950518A (en) * | 1982-09-01 | 1984-03-23 | パ−キン−エルマ−・ツエンゾ−ル・アンシュタルト | Project printing method |
| JPS5979527A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | Pattern detector |
| JPS6080223A (en) * | 1983-10-07 | 1985-05-08 | Hitachi Ltd | Light exposing device |
| JPS6083326A (en) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | Alignment device for exposing semiconductor |
-
1987
- 1987-03-04 JP JP62047563A patent/JPS63215039A/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950518A (en) * | 1982-09-01 | 1984-03-23 | パ−キン−エルマ−・ツエンゾ−ル・アンシュタルト | Project printing method |
| JPS5979527A (en) * | 1982-10-29 | 1984-05-08 | Hitachi Ltd | Pattern detector |
| JPS6080223A (en) * | 1983-10-07 | 1985-05-08 | Hitachi Ltd | Light exposing device |
| JPS6083326A (en) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | Alignment device for exposing semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63215039A (en) | 1988-09-07 |
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