JPH0550152B2 - - Google Patents
Info
- Publication number
- JPH0550152B2 JPH0550152B2 JP58221171A JP22117183A JPH0550152B2 JP H0550152 B2 JPH0550152 B2 JP H0550152B2 JP 58221171 A JP58221171 A JP 58221171A JP 22117183 A JP22117183 A JP 22117183A JP H0550152 B2 JPH0550152 B2 JP H0550152B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- crystal semiconductor
- metal film
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 80
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000013078 crystal Substances 0.000 claims description 35
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- 239000011651 chromium Substances 0.000 claims description 26
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 230000001678 irradiating effect Effects 0.000 claims description 13
- 239000010408 film Substances 0.000 description 72
- 238000006243 chemical reaction Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000005566 electron beam evaporation Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000009834 vaporization Methods 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001844 chromium Chemical class 0.000 description 2
- LJAOOBNHPFKCDR-UHFFFAOYSA-K chromium(3+) trichloride hexahydrate Chemical group O.O.O.O.O.O.[Cl-].[Cl-].[Cl-].[Cr+3] LJAOOBNHPFKCDR-UHFFFAOYSA-K 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000005345 chemically strengthened glass Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明は、光照射により光起電力を発生し得
る接合を少なくとも１つ有するアモルフアス半導
体を含む非単結晶半導体を透光性絶縁基板上に設
けた光電変換素子（単に素子ともいう）を複数個
電気的に直列接続して、高い電圧を発生させる半
導体装置の作製方法に関する。Detailed Description of the Invention [Field of Application of the Invention] The present invention provides a non-single-crystal semiconductor including an amorphous semiconductor having at least one junction that can generate photovoltaic force upon irradiation with light on a transparent insulating substrate. The present invention relates to a method for manufacturing a semiconductor device in which a plurality of photoelectric conversion elements (also simply referred to as elements) are electrically connected in series to generate a high voltage.
従来、集積型光電変換装置を作製する方法の１
つとして、レーザスクライブによる作製方法があ
る。
Conventionally, one of the methods for manufacturing an integrated photoelectric conversion device
One method is to use laser scribing.
このレーザスクライブは、コンピユータ制御に
よる正確な形成およびマスクレスプロセスを可能
とし、またそれにより大面積の集積型光電変換装
置を作製するに際して、極めて量産に適してお
り、かつ高性能な製品を作ることができる優れた
作製方法であつた。 This laser scribe enables precise formation and maskless processing under computer control, making it extremely suitable for mass production and capable of producing high-performance products when manufacturing large-area integrated photoelectric conversion devices. This was an excellent manufacturing method.
しかしながら従来は、例えば透光性導電膜上の
半導体をレーザにより除去して開溝を形成する際
に、単純に半導体上にレーザスクライブを行つた
場合、大気中の酸素と珪素とが反応し、加えて透
光性導電膜の表面が透光性導電膜と低級酸化珪素
との混合化合物とにより絶縁性になつてしまつ
た。 However, in the past, for example, when a semiconductor on a transparent conductive film was removed using a laser to form an open groove, if the laser was simply scribed on the semiconductor, oxygen in the atmosphere and silicon would react. In addition, the surface of the transparent conductive film has become insulating due to the mixed compound of the transparent conductive film and lower silicon oxide.
また、深さ方向の制御が難しいため半導体下の
透光性導電膜を損傷しやすかつた。 Furthermore, since it is difficult to control the depth, the transparent conductive film under the semiconductor is likely to be damaged.
そのため例えばその開溝にて電気的連結を形成
しようとしても、良好なコンタクトを作ることが
できなかつた。 Therefore, for example, even if an attempt was made to form an electrical connection using the open groove, a good contact could not be made.
本発明はレーザスクライブによつて半導体装置
を作製するに際し、透光性導電膜上の非単結晶半
導体を良好にスクライブできる作製方法を提供す
ることを目的とする。
An object of the present invention is to provide a manufacturing method that can satisfactorily scribe a non-single crystal semiconductor on a transparent conductive film when manufacturing a semiconductor device by laser scribing.
〔問題を解決する手段〕
上記の目的を達成するために本願発明は、透光
性導電膜上に形成された非単結晶半導体上にクロ
ムを主成分とする金属膜を形成して、該金属膜に
レーザ光を照射することにより、被照射部の前記
金属膜および該金属膜下の前記非単結晶半導体を
除去することを特徴としている。[Means for solving the problem] In order to achieve the above object, the present invention forms a metal film containing chromium as a main component on a non-single-crystal semiconductor formed on a transparent conductive film. The method is characterized in that the metal film in the irradiated area and the non-single crystal semiconductor under the metal film are removed by irradiating the film with laser light.
また本発明は、絶縁表面を有する基板上の透光
性導電膜にレーザ光を照射し第１の開溝を形成し
て複数の第１の電極領域を形成する工程と、該第
１の開溝および前記電極領域上に光照射により光
起電力を発生する非単結晶半導体と該非単結晶半
導体上にクロムを主成分とする金属膜とを形成す
る工程と、前記各第１の電極領域上の前記金属膜
を介して該膜下の前記非単結晶半導体層にレーザ
光を照射することにより、被照射部の前記金属膜
および該金属膜下の前記非単結晶半導体を除去し
て前記第１の電極を露呈させて第２の開溝を形成
する工程と、残存した前記金属膜上および前記第
２の開溝内に導電膜を形成する工程と、前記導電
膜にレーザ光を照射して第３の開溝を形成して複
数の第２の電極領域に分離する工程とを有し、こ
れにより、前記第１の電極領域の各々に、前記第
１の電極、非単結晶半導体層、金属膜、第２の電
極が積層された素子が形成されるとともに、前記
素子の内の１つの素子の前記露呈された第１の電
極上に該素子と隣接する素子の第２の電極が延在
して素子間が直列接続されたことを特徴としてい
る。 The present invention also provides a step of forming a plurality of first electrode regions by irradiating a transparent conductive film on a substrate having an insulating surface with a laser beam to form first grooves, and forming a plurality of first electrode regions. forming a non-single-crystal semiconductor that generates photovoltaic force by light irradiation on the groove and the electrode region, and a metal film containing chromium as a main component on the non-single-crystal semiconductor; and on each of the first electrode regions. By irradiating the non-single-crystal semiconductor layer under the film through the metal film, the metal film in the irradiated area and the non-single-crystal semiconductor layer under the metal film are removed. forming a conductive film on the remaining metal film and within the second groove; and irradiating the conductive film with a laser beam. forming a third trench to separate the plurality of second electrode regions, whereby the first electrode and the non-single crystal semiconductor layer are separated into each of the first electrode regions. , a metal film, and a second electrode are formed, and a second electrode of an adjacent element is placed on the exposed first electrode of one of the elements. It is characterized by extending and connecting the elements in series.
また本発明は、絶縁表面を有する基板上の透光
性導電膜にレーザ光を照射し第１の開溝を形成し
て複数の第１の電極領域を形成する工程と、該第
１の開溝および前記電極領域上に光照射により光
起電力を発制する非単結晶半導体と該非単結晶半
導体上にクロムを主成分とする金属膜とを形成す
る工程と、前記各第１の電極領域上の前記金属膜
を介して該膜下の前記非単結晶半導体層にレーザ
光を照射することにより、被照射部の前記金属膜
および該金属膜下の前記非単結晶半導体を除去し
て前記第１の電極を露呈させて第２の開溝を形成
する工程と、残存した前記金属膜を除去する工程
と、残存した前記非単結晶半導体上および前記第
２の開溝内に導電膜を形成する工程と、前記導電
膜にレーザ光を照射して第３の開溝を形成して複
数の第２の電極領域に分離する工程とを有し、こ
れにより、前記第１の電極領域の各々に、前記第
１の電極、非単結晶半導体層、第２の電極が積層
された素子が形成されるとともに、前記素子の内
の１つの素子の前記露呈された第１の電極上に該
素子と隣接する素子の第２の電極が延在して素子
間が直列接続されたことを特徴としている。 The present invention also provides a step of forming a plurality of first electrode regions by irradiating a transparent conductive film on a substrate having an insulating surface with a laser beam to form first grooves, and forming a plurality of first electrode regions. forming a non-single-crystalline semiconductor that generates photovoltaic force by light irradiation on the groove and the electrode region, and a metal film containing chromium as a main component on the non-single-crystalline semiconductor; and each of the first electrode regions. By irradiating the non-single crystal semiconductor layer below the film through the metal film above, the metal film in the irradiated area and the non-single crystal semiconductor under the metal film are removed. forming a second trench by exposing the first electrode; removing the remaining metal film; and forming a conductive film on the remaining non-single crystal semiconductor and in the second trench. and a step of irradiating the conductive film with a laser beam to form a third trench to separate the conductive film into a plurality of second electrode regions. An element in which the first electrode, a non-single crystal semiconductor layer, and a second electrode are stacked is formed on each of the elements, and a layer is formed on the exposed first electrode of one of the elements. The device is characterized in that the second electrodes of adjacent devices extend to connect the devices in series.
本発明における素子の配置、大きさ、形状は設
計仕様によつて決められる。しかし本発明の内容
を簡単にするため、以下の詳細な説明において
は、第１の素子の下側（基板側）の第１の電極
と、その右隣りに配置した第２の素子の第２の電
極（半導体上即ち基板から離れた側）とを電気的
に直列接続させた場合を基として記す。 The arrangement, size, and shape of elements in the present invention are determined by design specifications. However, in order to simplify the content of the present invention, in the following detailed description, the first electrode on the lower side (substrate side) of the first element and the second electrode of the second element disposed on the right side thereof will be described. This description is based on the case where the electrodes (on the semiconductor, that is, on the side away from the substrate) are electrically connected in series.
本発明は非単結晶半導体の上面に耐熱性、低熱
伝導率の導体例えばクロムを主成分とする金属を
設け、これを介してその下の半導体を選択的にレ
ーザスクライブにより除去する際、透光性導電膜
は何等損傷を受けることなく作製が可能であると
いう事実を用いて半導体装置とくに光電変換装置
の連結部を作製に有効である。 The present invention provides a heat-resistant, low-thermal-conductivity conductor, such as a metal mainly composed of chromium, on the upper surface of a non-single-crystal semiconductor, and when the semiconductor underneath is selectively removed by laser scribing through the conductor, light is transmitted through the conductor. The fact that a conductive film can be manufactured without any damage is effective for manufacturing a connecting portion of a semiconductor device, particularly a photoelectric conversion device.
すなわち本発明は実験的に見いだしたもので、
この半導体上にクロムの如き断熱し低熱伝導度に
よる保温性が大きく、かつ耐熱性の非酸化性材料
を形成しておくと、レーザスクライブによる化学
反応が珪素と透光性導電膜との間で起きず、熱に
より珪素のみを選択的に気化させることが条件に
よつて可能であることが判明した。 In other words, the present invention was discovered experimentally,
If a heat-insulating, non-oxidizing material such as chromium, which has high heat retention properties due to its low thermal conductivity and heat resistance, is formed on this semiconductor, the chemical reaction caused by laser scribing will occur between the silicon and the transparent conductive film. It has been found that under certain conditions, it is possible to selectively vaporize only silicon using heat, without causing this phenomenon.
このため、透光性導電膜上面も実質的に何等の
損傷もなく、導電性を有せしめることが可能にな
つた。 Therefore, the upper surface of the light-transmitting conductive film is also substantially free from any damage and can be rendered conductive.
このクロムは昇華性、すなわちレーザ照射によ
り気化しやすくレーザ加工に適している。 This chromium is sublimable, that is, easily vaporized by laser irradiation, making it suitable for laser processing.
またクロムは熱伝導率が金属中でも低いものの
代表例である。さらに半導体にオーム接触をし、
加えて室温〜150℃の高温長期使用に安定のため
電極−半導体界面での劣化がないという特長を有
する。 Furthermore, chromium is a typical example of metals with low thermal conductivity. Furthermore, make ohmic contact with the semiconductor,
In addition, it is stable in long-term use at high temperatures ranging from room temperature to 150°C, so it has the advantage of no deterioration at the electrode-semiconductor interface.
透光性導電膜−半導体−クロムという構造にお
いて、珪素を主成分とする半導体は昇華性を有
し、この上のクロムは耐酸化性ならびに高融点で
あるため耐熱性を有する。加えてレーザ光に対す
る反射光が少ないため、照射光によりクロム自体
とその下の半導体をも十分高い温度に昇温させる
ことができる。 In the structure of transparent conductive film-semiconductor-chromium, the semiconductor whose main component is silicon has sublimation properties, and the chromium thereon has oxidation resistance and a high melting point, so it has heat resistance. In addition, since there is little reflected light from the laser beam, the chromium itself and the semiconductor underneath can be heated to a sufficiently high temperature by the irradiation light.
また熱伝導率が低いため、この熱を横方向に伝
播して放散してしまうことがない。 Furthermore, since the thermal conductivity is low, this heat is not propagated laterally and dissipated.
すなわちクロムは高融点、低熱伝導度を有する
ため、局部的に高温まで蓄熱することが可能であ
る。 That is, since chromium has a high melting point and low thermal conductivity, it is possible to locally store heat up to a high temperature.
それゆえ、照射部での珪素を気化温度以上とし
て気化させ、はじけるように外に飛び散る。 Therefore, the silicon in the irradiated area is heated to a temperature higher than the vaporization temperature and is vaporized, causing it to burst outward.
この時、珪素よりも気化しにくい透光性導電膜
はそのままその下に表面を露呈して残存する。 At this time, the light-transmitting conductive film, which is more difficult to vaporize than silicon, remains as it is with its surface exposed underneath.
加えて珪素の気化の気化熱によりこの表面が露
呈しても透光性導電膜は温度により変質してしま
うことがない。 In addition, even if this surface is exposed due to the heat of vaporization of silicon, the light-transmitting conductive film will not change in quality due to temperature.
かかる構成によつて、第１の素子および第２の
素子を連結するための第２の開溝は、非単結晶半
導体を除去しつつも、第１の素子の第１の電極で
ある透光性導電膜はレーザスクライブにより除去
せずに作製することができた。 With this configuration, the second groove for connecting the first element and the second element can be formed by removing the non-single crystal semiconductor while also forming the first electrode of the first element. The conductive film could be fabricated by laser scribing without being removed.
その結果、第１の素子の第１の電極の上面に第
２の素子の第２の電極を構成する導電膜を延在さ
せてコンタクトせしめ、良好な連結部を構成させ
ることができた。 As a result, the conductive film constituting the second electrode of the second element was extended and brought into contact with the upper surface of the first electrode of the first element, thereby forming a good connection part.
以下に図面に従つて本発明の詳細を示す。 The details of the invention are shown below with reference to the drawings.
実施例 １
第１図は本発明の製造工程を示す縦断面図であ
る。Example 1 FIG. 1 is a longitudinal sectional view showing the manufacturing process of the present invention.
図面において絶縁表面を有する透光性基板１例
えばガラス板（例えば厚さ0.6〜2.2mm例えば1.2
mm、長さ〔図面では左右方向〕60cm、巾20cm）、
透光性有機樹脂またはこの樹脂上に窒化珪素膜が
300〜2000Åの厚さに形成された複合有機樹脂を
用いた。 In the drawings, a transparent substrate 1 having an insulating surface, such as a glass plate (for example, a thickness of 0.6 to 2.2 mm, for example, 1.2
mm, length (left and right in the drawing) 60cm, width 20cm),
Transparent organic resin or silicon nitride film on this resin
A composite organic resin formed to a thickness of 300 to 2000 Å was used.
さらにこの上面に全面にわたつて透光性導電膜
例えばITO（酸化インジユーム酸化スズ混合物、
即ち酸化スズを酸化インジユーム中に10重量％添
加した膜）（約1500Å）＋SnO2（200〜400Å）また
は弗素等のハロゲン元素が添加された酸化スズを
主成分とする透光性導電膜（1500〜20000Å）を
真空蒸着法、LPCVD法、プラズマCVD法または
スプレー法により形成させた。 Furthermore, a translucent conductive film such as ITO (indium tin oxide mixture) is applied to the entire upper surface.
In other words, a film in which 10 wt. ~20,000 Å) was formed by vacuum evaporation, LPCVD, plasma CVD, or spraying.
この後、YAGレーザ加工機（日本レーザ製波
長1.06μまたは0.58μ）により出力１〜3W（焦点距
離40mm）加え、スポツト径20〜70μφ代表的には
50μφをマイクロコンピユータにより制御した。
さらにこの照射レーザ光を走査させて、スクライ
ブラインである第１の開溝１３を形成させ、各素
子領域３１，１１に第１の電極２を作製した。 After this, an output of 1 to 3 W (focal length 40 mm) is applied using a YAG laser processing machine (wavelength 1.06 μ or 0.58 μ, manufactured by Nippon Laser), and the spot diameter is typically 20 to 70 μφ.
50μφ was controlled by a microcomputer.
Furthermore, this irradiated laser beam was scanned to form first grooves 13 as scribe lines, and first electrodes 2 were produced in each element region 31, 11.
この第１のレーザスクライブにより形成された
第１の開溝１３は、巾約50μ長さ20cm深さは第１
の透光性導電膜の電極それぞれを完全に切断する
程度とし、各々の素子領域に電気的に分離して第
１の電極とした。 The first open groove 13 formed by this first laser scribe has a width of approximately 50μ and a length of 20cm.
Each of the electrodes of the light-transmitting conductive film was completely cut off, and each element region was electrically separated to form a first electrode.
この後、この電極２、開溝１３の上面に公知の
プラズマCVD法または光CVD法により光照射に
より光起電力を発生させる非単結晶半導体層３を
0.2〜1.0μ代表的には0.5μの厚さに形成させた。 After that, a non-single crystal semiconductor layer 3 is formed on the upper surface of the electrode 2 and the groove 13 by a known plasma CVD method or optical CVD method to generate a photovoltaic force by light irradiation.
It was formed to a thickness of 0.2 to 1.0μ, typically 0.5μ.
その代表例はＰ型半導体（SixC1-xｘ＝0.8約
100Å）−Ｉ型アモルフアスまたはセミアモルフア
スのシリコン半導体（約0.5μ）−Ｎ型の微結晶
（約500Å）を有する半導体珪素さらにこの上に
SixC1-xｘ＝0.9約50Åを積層させて一つのPIN接
合を有する非単結晶半導体、またはＰ型半導体
（SixC1-x）−Ｉ型、Ｎ型、Ｐ型Si半導体−Ｉ型
SixGe1-x半導体−Ｎ型Si半導体よりなる２つの
PIN接合と１つのPN接合を有するタンデム型の
PINPIN…PIN接合の半導体３である。 A typical example is a P-type semiconductor (SixC 1-x x=0.8 approx.
100 Å) - I-type amorphous or semi-amorphous silicon semiconductor (approximately 0.5 μ) - Semiconductor silicon having N-type microcrystals (approximately 500 Å)
SixC 1-x Non-single crystal semiconductor with x=0.9 approximately 50 Å stacked and one PIN junction, or P-type semiconductor (SixC 1-x ) - I type, N type, P type Si semiconductor - I type
SixGe 1-x semiconductor - two types of N-type Si semiconductor
Tandem type with PIN junction and one PN junction
PINPIN...This is a semiconductor 3 of PIN junction.
かかる非単結晶半導体３を第１の電極および開
溝のすべてを覆つて全面にわたつて均一の膜厚で
形成させた。 The non-single crystal semiconductor 3 was formed to have a uniform thickness over the entire surface, covering all the first electrodes and the grooves.
さらにこの半導体上面にクロムを主成分とする
被膜（以下クロムという）４を電子ビーム蒸着法
により成膜した。 Furthermore, a film 4 containing chromium as a main component (hereinafter referred to as chromium) was formed on the upper surface of this semiconductor by electron beam evaporation.
クロムは導電率が低いので膜厚は厚い方が望ま
しいが、あまり厚くすると応力歪みを生じやす
い。 Since chromium has low conductivity, it is desirable that the film be thick, but if it is too thick, stress distortion tends to occur.
そこでスクライブ時のレーザの出力範囲に応じ
て、膜厚を300〜4000Åとした。 Therefore, the film thickness was set to 300 to 4000 Å depending on the laser output range during scribing.
次に、第１図Ｂに示されるごとく、第１の開溝
１３の左方向側（第１の素子側）にわたつて第２
の開溝１８を第２のレーザスクライブ工程により
形成させた。 Next, as shown in FIG.
The open grooves 18 were formed by a second laser scribing process.
この第２の開溝は図においては第２の素子１１
の第１の電極の側面１６より30μ以上左側であれ
ばよく、30〜200μ第１の素子側にシフトさせた。
即ち第１の素子の第１の電極位置上にわたつて設
け、第１の電極の一部９′が製造上のマージンを
与えるため残存させていることが特徴である。 This second open groove is shown in the second element 11.
It is sufficient that the position is 30 μ or more to the left of the side surface 16 of the first electrode, and it is shifted by 30 to 200 μ toward the first element side.
That is, it is characterized in that it is provided over the first electrode position of the first element, and a portion 9' of the first electrode is left to provide a manufacturing margin.
かくのごとき構造、すなわち、透光性導電膜２
−半導体３−クロムにおいて、珪素を主成分とす
る半導体は昇華性を有し、この上のクロムは耐酸
化性および高融点であるため耐熱性を有する。加
えてレーザ光に対する反射光が少ないため、照射
光によりクロム自体とその下の半導体をも十分高
い温度に昇温させることができる。 Such a structure, that is, the transparent conductive film 2
- Semiconductor 3 - In chromium, the semiconductor whose main component is silicon has sublimation properties, and the chromium above it has oxidation resistance and a high melting point, so it has heat resistance. In addition, since there is little reflected light from the laser beam, the chromium itself and the semiconductor underneath can be heated to a sufficiently high temperature by the irradiation light.
また熱伝導率が低いため、この熱を横方向に伝
播して放散してしまうことがなく、そして照射部
での珪素を気化温度以上として気化させ、はじけ
るように外に飛び散る。この時、珪素よりも気化
しにくい透光性導電膜はそのままその下に表面を
露呈して残存した。 In addition, since the thermal conductivity is low, this heat does not propagate laterally and dissipate, and the silicon in the irradiated area is vaporized at a temperature higher than the vaporization temperature and scatters outward like a burst. At this time, the light-transmitting conductive film, which is more difficult to vaporize than silicon, remained as it was with its surface exposed underneath.
加えて珪素の気化の気化熱によりこの表面が露
呈８しても透光性導電膜は温度により変質してし
まうことがなかつた。 In addition, even when this surface was exposed 8 due to the heat of vaporization of silicon, the light-transmitting conductive film did not change in quality due to temperature.
かくして第１図に示すごとく、透光性導電膜２
の上面８を露呈させることが可能となつた。 Thus, as shown in FIG.
It has become possible to expose the upper surface 8 of.
かくして第２の開溝１８を、第１図Ｂに示され
るごとく、第１の素子３１の第１の電極３７の内
部９に入つて作製した。 Thus, the second open groove 18 was formed by entering the interior 9 of the first electrode 37 of the first element 31, as shown in FIG. 1B.
この図面では第１および第２の開溝１３，１８
の中心間を100μずらしている。 In this drawing, the first and second open grooves 13, 18
The centers of the two are shifted by 100μ.
かくして第２の開溝１８は第１の電極の上表面
８を露呈させた。 The second open groove 18 thus exposed the upper surface 8 of the first electrode.
もちろん、レーザスクライブにおける平均出力
を大きくしてこの透光性導電膜をも除去してしま
うことにより透光性導電膜の側表面または側表面
と上表面端部を１〜5μの巾で露呈（半導体の方
が透光性導電膜より気化しやすいため）させるこ
とも可能である。 Of course, by increasing the average power in laser scribing and removing this transparent conductive film, the side surface or side surface and upper surface edge of the transparent conductive film are exposed in a width of 1 to 5 μm ( This is also possible because semiconductors are more easily vaporized than transparent conductive films.
さらにこの基板を希弗酸（48％HFを10倍の水
で希釈した1/10HFをここでは用いた）にて10秒
〜１分代表的には30秒間超音波を加えてエツチン
グしてもよい。 Furthermore, this substrate may be etched with dilute hydrofluoric acid (1/10HF, which is 48% HF diluted with 10 times water, was used here) for 10 seconds to 1 minute, typically by applying ultrasonic waves for 30 seconds. good.
第１図においては、このクロムをそのまま残存
させ、第２の電極の一部を構成させた。 In FIG. 1, this chromium was left as is and formed part of the second electrode.
さらにこの上面に第１図Ｃに示されるごとく、
裏面の第２の電極６および連結部（コネクタ）３
０を形成した。 Furthermore, as shown in FIG. 1C on this top surface,
Second electrode 6 and connecting part (connector) 3 on the back side
0 was formed.
この連結部を構成させる導体としては、導電性
酸化膜４５，４５′を形成した。 Conductive oxide films 45, 45' were formed as conductors constituting this connecting portion.
この導電性酸化膜７として、ここではITO（酸
化インジユーム酸化スズを主成分とする混合物）
４５を形成した。この導電性酸化膜として酸化イ
ンジユームを主成分として形成させることも可能
である。 This conductive oxide film 7 is made of ITO (a mixture whose main components are indium oxide and tin oxide).
45 was formed. It is also possible to form this conductive oxide film using indium oxide as a main component.
このITOを500〜3000Å例えば1500Åの厚さに
電子ビーム蒸着法、CVD法、PCVD法で形成せ
しめると、他の金属に比べて被膜形成の際きわめ
てまわりこみが起きやすい。このため第２の開溝
１８の内部に十分入り、透光性導電膜３７の底面
８と電気的によく連結させコンタクト構成が可能
となつた。 When this ITO is formed to a thickness of 500 to 3000 Å, for example 1500 Å, by electron beam evaporation, CVD, or PCVD, wrapping is more likely to occur during film formation than other metals. For this reason, it was able to fully enter the second groove 18 and electrically connect well with the bottom surface 8 of the transparent conductive film 37, thereby making it possible to form a contact structure.
即ち導電性酸化膜はこのコネクタ３０を構成す
る導体が最初から酸化物としての化合物を構成し
ているため、半導体３中に連結部によりマイグレ
イトすることがなく、また透光性導電膜３７と導
電性酸化膜３０との界面に酸化反応により絶縁物
が作製されることなく高信頼性を有せしめること
ができた。 In other words, the conductive oxide film does not migrate into the semiconductor 3 due to the connection part because the conductor constituting the connector 30 forms a compound as an oxide from the beginning, and the conductive oxide film does not migrate into the semiconductor 3 due to the connection part. High reliability could be achieved without forming an insulator at the interface with the conductive oxide film 30 due to oxidation reaction.
この導電性酸化膜上にニツケルを100〜1000Å
の厚さに真空蒸着をさせ外部接続を促進すること
は有効である。 Nickel is deposited on this conductive oxide film to a thickness of 100 to 1000 Å.
It is effective to perform vacuum evaporation to a thickness of 100 mL to facilitate external connections.
本発明の実施例において、クロムの下の半導体
との界面に反射性金属の銀、アルミニユームを50
〜500Åの厚さに薄く形成させ、光電変換装置の
変換効率の向上を図るのは有効であつた。 In the embodiment of the present invention, reflective metals such as silver and aluminum are added at the interface with the semiconductor under the chromium.
It was effective to improve the conversion efficiency of the photoelectric conversion device by forming it thinly to a thickness of ~500 Å.
次にこの第２の電極を構成させるため、第３の
開溝２０を第１の素子領域３１にわたつて設け
た。 Next, in order to configure this second electrode, a third groove 20 was provided across the first element region 31.
即ち、第１の素子の開放電圧が発生する電極３
９，３８間の電気的分離をレーザ光20〜100μφ代
表的には50μφ）を第２の開溝１８より約50μ離間
せしめて形成させた。即ち第３の開溝２０の中心
は第２の開溝３０の中心に比べて30〜200μ代表
的には100μの深さに第１の素子側にわたつて設
けている。 That is, the electrode 3 where the open circuit voltage of the first element is generated
Electrical isolation between the grooves 9 and 38 was formed by laser beams of 20 to 100 .mu..phi. (typically 50 .mu..phi.) at a distance of about 50 .mu. from the second open groove 18. That is, the center of the third open groove 20 is provided on the first element side at a depth of 30 to 200 μm, typically 100 μm, compared to the center of the second open groove 30.
第１図Ｃにおいて、かくのごとく第２の電極４
を第３のレーザスクライブのレーザ光を上方より
照射して切断分離して開溝２０を形成した場合を
示している。 In FIG. 1C, the second electrode 4 is thus
This figure shows the case where the laser beam of the third laser scribe is irradiated from above to cut and separate the grooves 20 to form the open grooves 20.
かかる第３の開溝においても耐熱性導体のクロ
ム４６により珪素に加えられた熱エネルギをとじ
こめるため、第２の開溝の形成と同様にレーザ照
射部分の半導体のすべてが除去され、第１の電極
の表面が露呈される。 In order to contain the thermal energy applied to the silicon by the heat-resistant conductor chromium 46 in the third groove, all of the semiconductor in the laser irradiated part is removed in the same manner as in the formation of the second groove, and The surface of the electrode is exposed.
この時、珪素の気化がはじけるように行われる
ため、第３の開溝の半導体の側周辺は多結晶化し
てシヨートすることなく正常に素子３１を作るこ
とが可能となつた。 At this time, since the vaporization of silicon was performed in a bursting manner, the semiconductor side periphery of the third trench became polycrystalline and it became possible to normally fabricate the element 31 without being shot.
この半導体の露呈に対して側面を酸化してパツ
シベイシヨンをすることは有効である。 It is effective to perform passivation by oxidizing the side surfaces of the exposed semiconductor.
かくして第１図Ｃに示されるごとく、複数の素
子３１，１１を連結部１２で直列接続する光電変
換装置を作ることができた。 In this way, as shown in FIG. 1C, a photoelectric conversion device in which a plurality of elements 31 and 11 were connected in series at the connecting portion 12 could be manufactured.
第１図Ｄはさらに本発明を光電変換装置として
完成させんとしたものであり、即ちパツシベイシ
ヨン膜としてプラズマ気相法により窒化珪素膜２
１を500〜2000Åの厚さに均一に形成させ、湿気
等の吸着による各素子間のリーク電流の発生をさ
らに防いだ。 FIG. 1D shows an attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film 2 is made by plasma vapor phase method as a passivation film.
1 was uniformly formed to a thickness of 500 to 2000 Å to further prevent leakage current between each element due to adsorption of moisture, etc.
さらに外部引出し端子を周辺部５にて設けた。 Furthermore, an external lead-out terminal was provided at the peripheral portion 5.
これらにポリイミド、ポリアミド、カプトンま
たはエポキシ等の有機樹脂２２を充填した。 These were filled with an organic resin 22 such as polyimide, polyamide, Kapton or epoxy.
かくして照射光１０により発生した光起電力は
底面コンタクトより矢印３２のごとく第１の素子
の第１の電極より第２の素子の第２の電極に流
れ、直列接続をさせることができた。 In this way, the photovoltaic force generated by the irradiation light 10 flows from the first electrode of the first element to the second electrode of the second element through the bottom contact as shown by the arrow 32, thereby making it possible to connect them in series.
そして、セグメントが10.3％（1.05cm）の変換
効率を有する場合、10cm×10cmのパネルにて8.6
％（理論的には9.4％になるが、12段連結の抵抗
により実効変換効率が低下した）（AM1〔100ｍ
Ｗ／cm2〕）にて、0.83Wの出力電力を有せしめる
ことができた。 And if the segment has a conversion efficiency of 10.3% (1.05cm), then in a 10cm x 10cm panel 8.6
% (Theoretically it would be 9.4%, but the effective conversion efficiency decreased due to the resistance of the 12-stage connection) (AM1 [100m
W/cm 2 ]), it was possible to have an output power of 0.83W.
さらにこのパネルを150℃の高温放置テストを
行うと1000時間を経て10％以下例えばパネル数20
枚にて最悪４％、Ｘ＝1.5％の低下しかみられな
かつた。 Furthermore, when this panel is subjected to a high temperature storage test at 150℃, the percentage decreases to below 10% after 1000 hours, for example, 20 panels.
The worst case scenario was a decline of only 4% (X = 1.5%).
これは従来のマスク方式を用いて信頼性テスト
を同一条件にて行う時、10時間で動作不能パネル
数が16枚も発生してしまうことを考えると、驚異
的な値であつた。 This is an astonishing value considering that when conducting a reliability test under the same conditions using the conventional mask method, as many as 16 panels would become inoperable in 10 hours.
実施例 ２
第２図は本発明の他の光電変換装置の作製方法
を示す。その工程を第１図と対応させて略記す
る。Example 2 FIG. 2 shows a method for manufacturing another photoelectric conversion device of the present invention. The process will be briefly described in correspondence with FIG.
第２図Ａにおいて、基板１上の透光性導電膜
２、第１の開溝、さらに非単結晶半導体を第１図
と同様の方法にて作製した。 In FIG. 2A, the transparent conductive film 2 on the substrate 1, the first groove, and the non-single crystal semiconductor were fabricated in the same manner as in FIG.
次に、熱伝導率が低く高融点を有する材料、即
ちレーザ光の熱をため込む材料であつて、半導体
と反応しにくい材料をこの上面に被膜４として形
成した。 Next, a material having low thermal conductivity and a high melting point, that is, a material that stores the heat of the laser beam and does not easily react with the semiconductor, was formed as a coating 4 on the upper surface.
被膜４は導体においてはクロムを主成分とする
金属を電子ビーム蒸着法、絶縁体においては窒化
珪素をプラズマ気相法により形成した。 The coating 4 was formed by electron beam evaporation of a metal containing chromium as a main component for the conductor, and by plasma vapor deposition of silicon nitride for the insulator.
さらに第１図Ｂと同様にレーザスクライブによ
り第２の開溝１８を形成し、第１の電極３７の表
面８を露呈させた。 Further, as in FIG. 1B, a second groove 18 was formed by laser scribing to expose the surface 8 of the first electrode 37.
加えて第２図Ｂに示すごとき被膜４をエツチン
グ法により除去した。 In addition, the coating 4 shown in FIG. 2B was removed by etching.
クロムのエツチングは硝酸、第２セリユーム、
アンモニユームと過塩素酸と水との混合液によ
り、また窒化珪素のエツチングに熱燐酸により実
施した。 For etching chromium, use nitric acid, cerium chloride,
Etching was carried out using a mixture of ammonium, perchloric acid, and water, and hot phosphoric acid for etching silicon nitride.
かくして第２図Ｂを得た。 Thus, Figure 2B was obtained.
さらにこの上面に第２の電極として導電性酸化
物４５，４５′をITOの電子ビーム蒸着法により
作製した。さらにクロムを主成分とする金属４
６，４６′を作製した。 Furthermore, conductive oxides 45 and 45' were formed as second electrodes on this upper surface by electron beam evaporation of ITO. In addition, metals whose main component is chromium 4
6,46' was produced.
かかる後、第２図Ｃに示すごとき第３の開溝を
形成した。するとこの第３の開溝２０は半導体を
損傷させることなく近傍を選択的に除去すること
ができた。加えてこの表面により半導体の開溝上
部が薄く酸化され、酸化で絶縁物３４のパツシベ
イシヨンが可能となつた。 After this, a third open groove as shown in FIG. 2C was formed. This third trench 20 was then able to selectively remove the vicinity without damaging the semiconductor. In addition, the upper part of the groove in the semiconductor was thinly oxidized by this surface, and the oxidation made it possible to passivate the insulator 34.
さらに第２図Ｄは、第１図Ｄに示す図面とパツ
シベイシヨン用窒化珪素膜およびコーテイング絶
縁膜２２を作製した。 Further, in FIG. 2D, a silicon nitride film for a passive basin and a coating insulating film 22 were fabricated as shown in FIG. 1D.
またこのパネル例えば40cm×60cmまたは60cm×
20cm、40cm×120cmを２ケ、４ケまたは１ケをア
ルミサツシまたは炭素繊維枠内に組み合わせるこ
とによりパツケージされ、120cm×40cmのNEDO
規格の大電力用のパネルを設けることが可能であ
る。 Also this panel for example 40cm x 60cm or 60cm x
A 120cm x 40cm NEDO is packaged by combining 2, 4 or 1 piece of 20cm, 40cm x 120cm in an aluminum sash or carbon fiber frame.
It is possible to provide panels for standard high power.
またこのNEDO規格のパネルはシーフレツク
スにより弗素系保護膜を本発明の光電変換装置の
反射面側（図面では上側）にはりあわせて合わ
せ、風圧、雨等に対し機械強度の増加を図ること
も有効である。 In addition, it is also effective for this NEDO standard panel to increase its mechanical strength against wind pressure, rain, etc. by attaching a fluorine-based protective film using Seaflex to the reflective surface side (upper side in the drawing) of the photoelectric conversion device of the present invention. It is.
第１図の図面に従つてこの具体例を示す。 A specific example of this will be shown according to the drawing in FIG.
即ち透光性基板１として化学強化ガラス厚さ
1.1mm、長さ10cm、巾10cmを用いた。 That is, the thickness of chemically strengthened glass as the transparent substrate 1
1.1 mm, length 10 cm, and width 10 cm were used.
さらにその上にテクスチヤー化（繊維構造を有
する）されたCTFをITO1600Å＋SnO2300Åを電
子ビーム蒸着法により作製した。 Furthermore, a textured CTF (having a fiber structure) was fabricated on top of this by electron beam evaporation using ITO 1600 Å + SnO 2 300 Å.
さらにこの後、第１の開溝をスポツト径50μ、
出力1WのYAGレーザをマイクロコンピユータに
より制御して３ｍ／分の走査速度にて作製した。 Furthermore, after this, the first open groove was made with a spot diameter of 50μ.
A YAG laser with an output of 1 W was controlled by a microcomputer at a scanning speed of 3 m/min.
さらにパネルの端部をレーザ光出力1Wにて第
１の電極用半導体をガラス端より1.5mm内側で長
方形に走査し（第１図１３′に対応）、パネルの枠
と素子との電気的短絡を防止した。 Furthermore, the first electrode semiconductor was scanned in a rectangular shape at the edge of the panel at a position 1.5 mm inside the glass edge using a laser beam output of 1 W (corresponding to Fig. 1 13') to create an electrical short circuit between the panel frame and the element. was prevented.
素子領域３１，１１は８mm巾とした。 The element regions 31 and 11 were 8 mm wide.
この後公知のPCVD法により第２図に示した
PIN接合を１つ有する非単結晶半導体を作製し
た。 After this, the well-known PCVD method was used to create the image shown in Figure 2.
A non-single crystal semiconductor with one PIN junction was fabricated.
その厚さは約0.6μであつた。 Its thickness was approximately 0.6μ.
さらに、クロム４を電子ビーム蒸着法により
3000Åの厚さに作製した。かかる後、第１の開溝
より100μ第１の素子３１をシフトさせて、スポ
ツト径50μφにて出力1W、走査速度30mm／分にて
大気中にてレーザスクライブにより第２の開溝１
８を第１図Ｂに示すごとく作製した。 Furthermore, chromium 4 was added by electron beam evaporation method.
It was fabricated to a thickness of 3000 Å. After this, the first element 31 is shifted 100μ from the first groove, and the second groove 1 is formed by laser scribing in the atmosphere with a spot diameter of 50μφ, an output of 1W, and a scanning speed of 30mm/min.
No. 8 was prepared as shown in FIG. 1B.
さらにこの基板全体を1/10HFに30秒浸し、開
溝部の酸化物絶縁物を除去し、透光性導電膜の表
面８を露呈させた。さらにこの全体に導電性酸化
膜としてITOを電子ビーム蒸着法により平均膜厚
1050Åに、電子ビーム蒸着法により作製して、第
２の電極３８，３９の一部４５，４５′を形成さ
せ、加えてコネクタ３０を構成せしめた。 Further, the entire substrate was immersed in 1/10HF for 30 seconds to remove the oxide insulator in the open grooves and expose the surface 8 of the transparent conductive film. Furthermore, ITO was applied as a conductive oxide film to the entire surface using electron beam evaporation to give an average film thickness.
It was fabricated to a thickness of 1050 Å by electron beam evaporation to form parts 45 and 45' of the second electrodes 38 and 39, and in addition, the connector 30 was formed.
さらに第３の開溝２０を同様に第３のレーザス
クライブにより第２の開溝１８より100μのわた
り深さに第１の素子３１側にシフトして形成さ
せ、第１図Ｃを得た。レーザ光は出力1Wとし、
他は第２の開溝の作製と同一条件とした。 Furthermore, a third open groove 20 was similarly formed by a third laser scribe to a depth of 100 μm from the second open groove 18, shifted toward the first element 31 side, to obtain FIG. 1C. The laser beam has an output of 1W,
The other conditions were the same as those for producing the second open groove.
この後、パツシベイシヨン膜２１をPCVD法に
より窒化珪素膜を1000Åの厚さに200℃の温度に
て作製した。 Thereafter, a silicon nitride film with a thickness of 1000 Å was formed at a temperature of 200° C. by the PCVD method to form a passivation film 21.
すると10cm×10cmのパネルに12段の素子を連結
し、有効面積88％を作ることができた。 By connecting 12 stages of elements to a 10cm x 10cm panel, they were able to create an effective area of 88%.
パネルの実効効率としてAM1（100ｍＷ／cm2）
にて8.6％、出力0.83Wを得ることができた。 AM1 (100mW/cm 2 ) as the effective efficiency of the panel
We were able to obtain an output of 8.6% and an output of 0.83W.
本発明における透光性基板１として透光性有機
樹脂例えば住友ベークライト社のスミラート1100
を用い、さらに、上側も保護用有機樹脂２２を重
合わせることにより、有機樹脂シートの間に光電
変換装置をはさむ構造とすることができ、可曲性
を有し、きわめて安価で多量生産が可能になつ
た。 As the light-transmitting substrate 1 in the present invention, a light-transmitting organic resin such as Sumilato 1100 manufactured by Sumitomo Bakelite Co., Ltd.
By further overlapping the protective organic resin 22 on the upper side, it is possible to create a structure in which the photoelectric conversion device is sandwiched between the organic resin sheets, which has flexibility and can be mass-produced at extremely low cost. It became.
本発明における第２の開溝は非単結晶半導体の
全幅にわたつて設けた。 The second groove in the present invention is provided over the entire width of the non-single crystal semiconductor.
しかしこれを一部とした開孔により、またはパ
ネルの周辺部の半導体を残し、内部にのみ開溝を
形成することにより、連結部の周辺部でのそれぞ
れの素子間のシヨートを防ぐ構成にさせることは
有効である。 However, by making a hole using this as a part, or by leaving the semiconductor at the periphery of the panel and forming an opening only inside, a structure can be created to prevent shortening between the respective elements at the periphery of the connection part. That is valid.
第１図〜第２図において、孔入射は下側の透光
性絶縁基板よりとした。 In FIGS. 1 and 2, the hole was incident from the lower transparent insulating substrate.
しかし本発明はその光入射側を下側に限定する
ことなく、上側の電極をITOとして上側より光照
射を行うことも可能であり、また基板もガラス基
板ではなく可曲性透光性有機樹脂基板を用いるこ
とは可能である。 However, in the present invention, the light incident side is not limited to the lower side, and it is also possible to use ITO as the upper electrode and irradiate light from the upper side, and the substrate is not a glass substrate but a flexible transparent organic resin. It is possible to use a substrate.
本発明により、透光性導電膜の上に形成された
非単結晶半導体の上面に耐熱性、低熱伝導率のク
ロムを主成分とする金属を設け、これを介してレ
ーザスクライブを行なうことにより、透光性導電
膜は何等損傷を受けることなく、レーザスクライ
ブによつて半導体を選択的に除去することが可能
となつた。
According to the present invention, a heat-resistant, low thermal conductivity metal mainly composed of chromium is provided on the upper surface of a non-single-crystal semiconductor formed on a transparent conductive film, and laser scribing is performed through this metal. It has become possible to selectively remove the semiconductor by laser scribing without any damage to the transparent conductive film.
これにより、マスクレスプロセスであるレーザ
スクライブ方式を用いて２つの素子を連結する連
結部の製造方法において、良好なコンタクトを得
ることができた。 As a result, good contact could be obtained in the method for manufacturing a connecting portion that connects two elements using a laser scribing method, which is a maskless process.
本発明は光電変換装置、特に薄膜型光電変換装
置にあつては、それぞれの薄膜層である電極用導
電性層、または半導体層はともにそれぞれ500Å
〜1μ、0.2〜1.0μの薄さであり、レーザスクライ
ブ方式を用いることにより、コンピユータコント
ロール方式の自動マスク合わせ機構で作製するこ
とを可能とした。 In the case of a photoelectric conversion device, particularly a thin film type photoelectric conversion device, the present invention provides that each of the thin film layers, such as a conductive layer for an electrode or a semiconductor layer, each have a thickness of 500 Å.
~1μ, 0.2~1.0μ thin, and by using a laser scribing method, it was possible to manufacture it with a computer-controlled automatic mask alignment mechanism.
本発明は、マスクを全く用いないマスクレス工
程とすることができ、きわめて簡単かつ高精度で
あり、装置の製造コストの低下をもたらし、その
ため500円／Ｗの製造も可能となり、その製造規
模の拡大により100〜200円／Ｗも可能になるとい
う極めて画規的な光電変換装置を提供することが
できた。 The present invention enables a maskless process that does not use a mask at all, is extremely simple and highly accurate, and reduces the manufacturing cost of the device.As a result, manufacturing at 500 yen/W is possible, and the manufacturing scale can be reduced. We were able to provide an extremely standard photoelectric conversion device that could be expanded to cost 100 to 200 yen/W.
第１図は本発明による実施例における光電変換
装置の製造工程を示す縦断面図である。第２図は
本発明による他の実施例における光電変換装置の
製造工程を示す縦断面図である。
FIG. 1 is a longitudinal sectional view showing the manufacturing process of a photoelectric conversion device in an embodiment according to the present invention. FIG. 2 is a longitudinal sectional view showing the manufacturing process of a photoelectric conversion device in another embodiment of the present invention.
Claims (1)
上にクロムを主成分とする金属膜を形成して、該
金属膜にレーザ光を照射することにより、被照射
部の前記金属膜および該金属膜下の前記非単結晶
半導体を除去することを特徴とする半導体装置作
製方法。 ２ 絶縁表面を有する基板上の透光性導電膜にレ
ーザ光を照射し第１の開溝を形成して複数の第１
の電極領域を形成する工程と、 該第１の開溝および前記電極領域上に光照射に
より光起電力を発生する非単結晶半導体と該非単
結晶半導体上にクロムを主成分とする金属膜とを
形成する工程と、 前記各第１の電極領域上の前記金属膜を介して
該膜下の前記非単結晶半導体層にレーザ光を照射
することにより、被照射部の前記金属膜および該
金属膜下の前記非単結晶半導体を除去して前記第
１の電極を露呈させて第２の開溝を形成する工程
と、 残存した前記金属膜上および前記第２の開溝内
に導電膜を形成する工程と、 前記導電膜にレーザ光を照射して第３の開溝を
形成して複数の第２の電極領域に分離する工程と
を有し、 これにより、前記第１の電極領域の各々に、前
記第１の電極、非単結晶半導体層、金属膜、第２
の電極が積層された素子が形成されるとともに、
前記素子の内の１つの素子の前記露呈された第１
の電極上に該素子と隣接する素子の第２の電極が
延在して素子間が直列接続されたことを特徴とす
る半導体装置作製方法。 ３ 絶縁表面を有する基板上の透光性導電膜にレ
ーザ光を照射し第１の開溝を形成して複数の第１
の電極領域を形成する工程と、 該第１の開溝および前記電極領域上に光照射に
より光起電力を発生する非単結晶半導体と該非単
結晶半導体上にクロムを主成分とする金属膜とを
形成する工程と、 前記各第１の電極領域上の前記金属膜を介して
該膜下の前記非単結晶半導体層にレーザ光を照射
することにより、被照射部の前記金属膜および該
金属膜下の前記非単結晶半導体を除去して前記第
１の電極を露呈させて第２の開溝を形成する工程
と、 残存した前記金属膜を除去する工程と、 残存した前記非単結晶半導体上および前記第２
の開溝内に導電膜を形成する工程と、 前記導電膜にレーザ光を照射して第３の開溝を
形成して複数の第２の電極領域に分離する工程と
を有し、 これにより、前記第１の電極領域の各々に、前
記第１の電極、非単結晶半導体層、第２の電極が
積層された素子が形成されるとともに、前記素子
の内の１つの素子の前記露呈された第１の電極上
に該素子と隣接する素子の第２の電極が延在して
素子間が直列接続されたことを特徴とする半導体
装置作製方法。[Claims] 1. A metal film containing chromium as a main component is formed on a non-single-crystal semiconductor formed on a transparent conductive film, and the metal film is irradiated with a laser beam. 1. A method for manufacturing a semiconductor device, comprising removing the metal film at the top and the non-single-crystal semiconductor under the metal film. 2. A plurality of first grooves are formed by irradiating a laser beam onto a transparent conductive film on a substrate having an insulating surface to form a first groove.
a non-single-crystal semiconductor that generates photovoltaic force by light irradiation on the first groove and the electrode region; and a metal film containing chromium as a main component on the non-single-crystal semiconductor. irradiating the non-single crystal semiconductor layer under the film with laser light through the metal film on each of the first electrode regions, thereby removing the metal film and the metal in the irradiated portion. removing the non-single crystal semiconductor under the film to expose the first electrode to form a second trench; and forming a conductive film on the remaining metal film and in the second trench. and a step of irradiating the conductive film with a laser beam to form a third trench to separate the conductive film into a plurality of second electrode regions. The first electrode, the non-single crystal semiconductor layer, the metal film, and the second electrode, respectively.
An element with laminated electrodes is formed, and
the exposed first of one of the elements;
A method for manufacturing a semiconductor device, characterized in that a second electrode of an element adjacent to the element extends over the electrode of the element, so that the elements are connected in series. 3. A plurality of first grooves are formed by irradiating a laser beam onto a transparent conductive film on a substrate having an insulating surface to form a first groove.
a non-single-crystal semiconductor that generates photovoltaic force by light irradiation on the first groove and the electrode region; and a metal film containing chromium as a main component on the non-single-crystal semiconductor. irradiating the non-single crystal semiconductor layer under the film with laser light through the metal film on each of the first electrode regions, thereby removing the metal film and the metal in the irradiated portion. removing the non-single crystal semiconductor under the film to expose the first electrode and forming a second trench; removing the remaining metal film; and removing the remaining non-single crystal semiconductor. above and said second
a step of forming a conductive film in the open groove; and a step of irradiating the conductive film with a laser beam to form a third open groove and separating it into a plurality of second electrode regions. , an element in which the first electrode, a non-single crystal semiconductor layer, and a second electrode are stacked is formed in each of the first electrode regions, and the exposed area of one of the elements is formed. A method for manufacturing a semiconductor device, characterized in that a second electrode of an element adjacent to the element extends over the first electrode, so that the elements are connected in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58221171A JPS60113476A (en) | 1983-11-24 | 1983-11-24 | Manufacture of photoelectric conversion semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58221171A JPS60113476A (en) | 1983-11-24 | 1983-11-24 | Manufacture of photoelectric conversion semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5040571A Division JPH06112514A (en) | 1993-02-04 | 1993-02-04 | Manufacture of photoelectric conversion semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60113476A JPS60113476A (en) | 1985-06-19 |
| JPH0550152B2 true JPH0550152B2 (en) | 1993-07-28 |
Family
ID=16762584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58221171A Granted JPS60113476A (en) | 1983-11-24 | 1983-11-24 | Manufacture of photoelectric conversion semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60113476A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008091532A (en) * | 2006-09-29 | 2008-04-17 | Sanyo Electric Co Ltd | Solar battery module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co |
-
1983
- 1983-11-24 JP JP58221171A patent/JPS60113476A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60113476A (en) | 1985-06-19 |
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