JPH0547828A - Bonding method of sheathed wire - Google Patents

Bonding method of sheathed wire

Info

Publication number
JPH0547828A
JPH0547828A JP3198170A JP19817091A JPH0547828A JP H0547828 A JPH0547828 A JP H0547828A JP 3198170 A JP3198170 A JP 3198170A JP 19817091 A JP19817091 A JP 19817091A JP H0547828 A JPH0547828 A JP H0547828A
Authority
JP
Japan
Prior art keywords
wire
bonding
electrode
tool head
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3198170A
Other languages
Japanese (ja)
Inventor
Yoshihiro Teruya
嘉弘 照屋
Kimio Hosoya
喜美夫 細谷
Mamoru Shinjo
護 新城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3198170A priority Critical patent/JPH0547828A/en
Publication of JPH0547828A publication Critical patent/JPH0547828A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

PURPOSE:To provide the bonding method of a sheathed wire, in which the reliability of joining between the sheathed wire and the electrode of a semiconductor chip and between the sheathed wire and the pad of a circuit board is improved, the clogging of a tool head is prevented and a conductor ball is formed easily at the time of first bonding, regarding the bonding method of the sheathed wire connecting the electrode and the pad. CONSTITUTION:In first bonding, in which the tip section of a sheathed wire 5 is connected to the electrode 21 of a semiconductor chip 2 die-bonded with a circuit board 1, the tip section of the sheathed wire 5 led out of the front end of the tool head 31 of a wire bonding tool 3 is irradiated with laser beams 4, the cover 52 of the tip section of the sheathed wire 5 is sublimated and removed to expose a conductor wire 51, an exposed section is heated and melted and the exposed section is formed in a conductor ball 55, and the conductor ball 55 section is bonded with the electrode 21.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、半導体チップの電極と
回路基板のパッドを接続する被覆付ワイヤのボンデング
方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of bonding a coated wire for connecting an electrode of a semiconductor chip and a pad of a circuit board.

【０００２】[0002]

【従来の技術】半導体チップは回路基板に図４に図示し
たようにして実装されることが多い。回路基板１の実装
面には、半導体チップ２をダイボンデングする位置に角
形のダイパッド12を形成するとともに、ダイパッド12の
周囲に枠形に多数のパッド11を配列形成している。2. Description of the Related Art A semiconductor chip is often mounted on a circuit board as shown in FIG. On the mounting surface of the circuit board 1, a square die pad 12 is formed at a position where the semiconductor chip 2 is die-bonded, and a large number of pads 11 are formed in a frame shape around the die pad 12.

【０００３】そして、ダイパッド12上に接着剤或いは導
電性接着剤を用いて、半導体チップ２をフェースアップ
にダイボンデングした後に、半導体チップ２の電極21と
対応するパッド11とを、超音波ボンデング法，熱圧着ボ
ンデング法，或いはサーモソニックボンデング法等（い
ずれもボンデング方法に応じたワイヤボンデングツール
を用いる。）により接続している。Then, after the semiconductor chip 2 is die-bonded face up with an adhesive or a conductive adhesive on the die pad 12, the electrode 21 of the semiconductor chip 2 and the corresponding pad 11 are ultrasonically bonded by an ultrasonic bonding method, Connection is made by a thermocompression bonding method, a thermosonic bonding method, or the like (both use a wire bonding tool suitable for the bonding method).

【０００４】詳述すると、ボビンに巻回したワイヤを巻
き解き、その先端をツ−ルヘッドの孔に差し込んでツ−
ルヘッドを通し、ツ−ルヘッドの先端部より突出したワ
イヤの先端部を、電極21に圧接して接続している。な
お、この接続を第１ボンデングという。More specifically, the wire wound around the bobbin is unwound, and the tip of the wire is inserted into the hole of the tool head.
The tip of the wire, which passes through the tool head and protrudes from the tip of the tool head, is pressed against and connected to the electrode 21. Note that this connection is called the first bonding.

【０００５】第１ボンデングに引き続いて、ワイヤボン
デングツールをパッド11上に移動し（この際ワイヤはツ
−ルヘッドの孔から繰り出される）、ツ−ルヘッドの先
端部をパッド11に押しつけて、ワイヤの所望の箇所をパ
ッド11に圧接して接続している。なお、この接続を第２
ボンデングという。Subsequent to the first bonding, the wire bonding tool is moved onto the pad 11 (the wire is paid out from the hole of the tool head at this time), and the tip end of the tool head is pressed against the pad 11 to move the wire. A desired portion of the pad 11 is connected to the pad 11 by pressing. This connection is the second
Bonding.

【０００６】この際、第１ボンデングにおいては、ボン
デング前に放電トーチをツ−ルヘッドの先端部に近づけ
て、放電トーチとツ−ルヘッド間で放電させることで、
ワイヤの先端部を球状化して導体ボールとして、この導
体ボールを電極21に押圧することで、接続の信頼度を高
めている。At this time, in the first bonding, before the bonding, the discharge torch is brought close to the tip of the tool head so that the discharge torch and the tool head are discharged.
The tip of the wire is made into a spherical shape to form a conductor ball, and the conductor ball is pressed against the electrode 21 to improve the reliability of connection.

【０００７】一方、半導体チップの高集積化に伴い、半
導体チップ２の上面には近接して電極21が配列される傾
向にある。したがってワイヤ相互間のショート障害防止
のため、電極21とパッド11とを接続するワイヤには、近
年、被覆付ワイヤ５が使用される傾向にある。On the other hand, with the high integration of the semiconductor chip, the electrodes 21 tend to be arranged close to the upper surface of the semiconductor chip 2. Therefore, in order to prevent short-circuit failure between wires, the coated wire 5 tends to be used in recent years as a wire connecting the electrode 21 and the pad 11.

【０００８】被覆付ワイヤ５は直径が25μm 程度の導体
線（アルミニュウム線，金線, 銅線等）の周囲を、約１
μm 厚のボリイミド系樹脂で被覆したものである。The coated wire 5 has about 1 μm around the conductor wire (aluminum wire, gold wire, copper wire, etc.) having a diameter of about 25 μm.
It is coated with a polyimide resin of μm thickness.

【０００９】[0009]

【発明が解決しようとする課題】ところで、上述のよう
に被覆付ワイヤを用いてボンデングすると、導体線の周
囲に被覆があるために、導体線と電極，及び導体線とパ
ッドとの接合性が低下するという問題点があった。By the way, when the coated wire is bonded as described above, the conductor wire and the electrode, and the conductor wire and the pad have a bondability because of the coating around the conductor wire. There was a problem that it decreased.

【００１０】また、ボンデング時に被覆付ワイヤが加熱
されることに起因して、被覆が溶けてツ−ルヘッドの目
詰まりをおこし、被覆付ワイヤのツ−ルヘッドからの引
き出しの障害になるという問題点があった。In addition, since the coated wire is heated during bonding, the coating is melted to cause clogging of the tool head, which hinders the withdrawal of the coated wire from the tool head. was there.

【００１１】さらにまた、第１ボンデング時の導体ボー
ルの形成が困難である。本発明はこのような点に鑑みて
創作されたもので、被覆付ワイヤと電極間、及び被覆付
ワイヤとパッド間の接合の信頼度が高く、またツ−ルヘ
ッドの目詰まりがなく、さらにまた、第１ボンデング時
の導体ボールの形成が容易な被覆付ワイヤのボンデング
方法を提供することを目的としている。Furthermore, it is difficult to form the conductor balls during the first bonding. The present invention was created in view of the above points, and has high reliability of bonding between the coated wire and the electrode, and between the coated wire and the pad, and the tool head is not clogged. It is an object of the present invention to provide a method of bonding a coated wire that facilitates formation of a conductor ball during the first bonding.

【００１２】[0012]

【課題を解決するための手段】上記の目的を達成するた
めに本発明は、図１に図示したように、ワイヤボンデン
グツール３を用いて、回路基板１にダイボンデングした
半導体チップ２の電極21に、被覆付ワイヤ５の先端部を
接続する第１ボンデングにおいて、ワイヤボンデングツ
ール３のツ−ルヘッド31の先端から引き出された被覆付
ワイヤ５の先端部に、レーザ光４を照射して被覆付ワイ
ヤ５の先端部の被覆52を昇華し除去して導体線51を裸出
させた後に、放電トーチ６を用いて裸出部を加熱溶融し
て導体ボール55とし、その後導体ボール55部分を電極21
にボンデングする。In order to achieve the above object, the present invention uses an electrode 21 of a semiconductor chip 2 die-bonded to a circuit board 1 using a wire bonding tool 3 as shown in FIG. In the first bonding for connecting the tip portion of the coated wire 5, the tip portion of the coated wire 5 pulled out from the tip of the tool head 31 of the wire bonding tool 3 is irradiated with the laser beam 4 for coating. After the coating 52 at the tip of the attached wire 5 is sublimated and removed to bare the conductor wire 51, the bare portion is heated and melted using the discharge torch 6 to form the conductor ball 55, and then the conductor ball 55 portion is removed. Electrode 21
Bonding to.

【００１３】また、図２に図示したように、ワイヤボン
デングツール３を用いて、被覆付ワイヤ５の後端部を回
路基板１のパッド11に接続する第２ボンデングにおい
て、ツ−ルヘッド31から引き出された被覆付ワイヤ５の
所望の部分に、レーザ光４を照射して被覆52を昇華し除
去して導体線51の中間部を裸出させた後に、裸出部をパ
ッド11にボンデングするものとする。Further, as shown in FIG. 2, in the second bonding for connecting the rear end of the coated wire 5 to the pad 11 of the circuit board 1 by using the wire bonding tool 3, the tool head 31 is removed from the tool head 31. The desired portion of the pulled-out coated wire 5 is irradiated with the laser beam 4 to sublimate and remove the coating 52 to bare the middle portion of the conductor wire 51, and then the bare portion is bonded to the pad 11. I shall.

【００１４】[0014]

【作用】前述のように、被覆付ワイヤは直径が25μm 程
度の導体線の周囲を、約１μm厚のボリイミド系樹脂で
被覆したものである。As described above, the coated wire is a conductor wire having a diameter of about 25 μm, which is coated with a polyimide resin having a thickness of about 1 μm.

【００１５】そして、導体線の昇華エネルギーは、平方
センチメートルあたり約８ジュールであり、ボリイミド
系樹脂の被覆の昇華エネルギーは、平方センチメートル
あたり約0.5 ジュールである。The sublimation energy of the conductor wire is about 8 joules per square centimeter, and the sublimation energy of the coating of the polyimide resin is about 0.5 joule per square centimeter.

【００１６】したがって、被覆付ワイヤにレーザ光を照
射すると被覆のみが昇華し除去される。したがって、導
体線と電極，及び導体線とパッドとの接合性が向上す
る。また、被覆が液状とならず昇華されるので、ツ−ル
ヘッドの目詰まりをおこすことがない。Therefore, when the coated wire is irradiated with laser light, only the coating is sublimated and removed. Therefore, the bondability between the conductor wire and the electrode and the conductor wire and the pad is improved. Further, since the coating does not become liquid and is sublimated, the tool head is not clogged.

【００１７】さらにまた、第１ボンデング時の導体ボー
ルの形成においては、被覆等の不純物がないので、導体
線の表面張力が均一に作用して不純物が混入しない球状
となる。Furthermore, in the formation of the conductor balls during the first bonding, since there are no impurities such as coatings, the surface tension of the conductor wire acts uniformly to form a spherical shape in which no impurities are mixed.

【００１８】[0018]

【実施例】以下図を参照しながら、本発明を具体的に説
明する。なお、全図を通じて同一符号は同一対象物を示
す。The present invention will be described in detail with reference to the drawings. The same reference numerals denote the same objects throughout the drawings.

【００１９】図１の(A),(B),(C) は第１の発明の工程
図、図２の(A),(B) は第２の発明の工程図、図３は本発
明のワイヤボンデング後の断面図である。図１の(C) に
図示したように、回路基板１の実装面には、半導体チッ
プ２をダイボンデングする位置に角形のダイパッド12を
形成するとともに、ダイパッド12の周囲に枠形に多数の
パッド11を配列形成している。1A, 1B, and 1C are process drawings of the first invention, FIGS. 2A and 2B are process drawings of the second invention, and FIG. 3 is the invention. FIG. 4 is a cross-sectional view after wire bonding of FIG. As shown in FIG. 1C, a rectangular die pad 12 is formed on the mounting surface of the circuit board 1 at a position where the semiconductor chip 2 is die bonded, and a large number of frame-shaped pads 11 are formed around the die pad 12. Are formed in an array.

【００２０】そして、ダイパッド12上に接着剤或いは導
電性接着剤を用いて、半導体チップ２をフェースアップ
にダイボンデングしている。このような半導体チップ２
を、被覆付ワイヤ５を使用して第１ボンデングし、次に
第２ボンデングして回路基板１に実装するには、先ず、
図１の(A) に図示したように、ボビン（図示省略) に巻
回した被覆付ワイヤ５を巻き解き、その先端をワイヤボ
ンデングツール（例えば超音波ボンデングツール）のツ
−ルヘッド31を貫通する孔32に差し込んでツ−ルヘッド
31を通し、ツ−ルヘッド31の先端部より突出した被覆付
ワイヤ５のの先端部にレーザ光（例えばＹＡＧレーザ）
４を照射して、被覆52を昇華させる。Then, the semiconductor chip 2 is die-bonded face up with an adhesive or a conductive adhesive on the die pad 12. Such a semiconductor chip 2
In order to perform the first bonding using the covered wire 5 and then the second bonding on the circuit board 1, first,
As shown in FIG. 1 (A), the coated wire 5 wound around a bobbin (not shown) is unwound, and the tip of the unwrapped wire 5 is attached to a tool head 31 of a wire bonding tool (for example, ultrasonic bonding tool). Insert into the through hole 32 to insert the tool head
Laser light (for example, YAG laser) is passed through the tip of the coated wire 5 which is projected from the tip of the tool head 31 through the through hole 31.
Irradiate 4 to sublimate coating 52.

【００２１】次に、図１の(B) に図示したように、放電
トーチ６をツ−ルヘッド31の下方に対向して近づけて、
放電トーチ６とツ−ルヘッド31間で放電させることで、
被覆付ワイヤ５の裸出した導体線51部分を球状化して被
覆付ワイヤ５の先端部を導体ボール55とする。Next, as shown in FIG. 1 (B), the discharge torch 6 is brought under the tool head 31 so as to face it,
By discharging between the discharge torch 6 and the tool head 31,
The bare conductor wire 51 of the coated wire 5 is spheroidized to form the tip of the coated wire 5 as a conductor ball 55.

【００２２】そして、図１の(C) に図示したように、ツ
−ルヘッド31を降下して、その先端部を電極21に圧接し
て導体ボール55を電極21に押圧し、ツ−ルヘッド31に超
音波振動を付与( 超音波ボンデングツールの場合) して
被覆付ワイヤ５を電極21に接合させる。Then, as shown in FIG. 1 (C), the tool head 31 is lowered, its tip is pressed against the electrode 21 to press the conductor ball 55 against the electrode 21, and the tool head 31 is pressed. The coated wire 5 is bonded to the electrode 21 by applying ultrasonic vibration to it (in the case of ultrasonic bonding tool).

【００２３】次に図２を参照しながら第２ボンデングに
ついて説明する。図２の(A) に図示したように第１ボン
デングした後にツ−ルヘッド31を、ワイヤの接続すべき
長さだけ直上に引き上げる。この際被覆付ワイヤ５の先
端は電極21に接続されているので、被覆付ワイヤ５はツ
−ルヘッド31の孔32から繰り出される。Next, the second bonding will be described with reference to FIG. After the first bonding, as shown in FIG. 2 (A), the tool head 31 is pulled up just above the length to which the wire should be connected. At this time, since the tip of the coated wire 5 is connected to the electrode 21, the coated wire 5 is paid out from the hole 32 of the tool head 31.

【００２４】そして、ツ−ルヘッド31の先端部近傍の被
覆付ワイヤ５部分にレーザ光４を照射して、被覆52を昇
華させ、約２mm幅で導体線51を裸出させる。次に、図２
の(B) に図示したように、ツ−ルヘッド31をパッド11上
に移動して、その先端部をパッド11に圧接して導体線51
の裸出部分をパッド11に押圧し、ツ−ルヘッド31に超音
波振動を付与( 超音波ボンデングツールの場合) して被
覆付ワイヤ５をパッド11に接合させる。Then, the coated wire 5 portion near the tip of the tool head 31 is irradiated with the laser beam 4 to sublimate the coating 52 and to bare the conductor wire 51 with a width of about 2 mm. Next, FIG.
(B), the tool head 31 is moved onto the pad 11 and the tip of the tool head 31 is pressed against the pad 11 to form the conductor wire 51.
The exposed portion of the wire is pressed against the pad 11 and ultrasonic vibration is applied to the tool head 31 (in the case of an ultrasonic bonding tool) to bond the covered wire 5 to the pad 11.

【００２５】なお、ツ−ルヘッド31の上方には被覆付ワ
イヤ５を挟持するカットクランパ７を設けてあるが、第
１ボンデング時、及び第２ボンデング時には、カットク
ランパ７は弛めた状態にしておき、被覆付ワイヤ５をフ
リー状態にしている。A cut clamper 7 for sandwiching the covered wire 5 is provided above the tool head 31, but the cut clamper 7 is in a loosened state during the first bonding and the second bonding. Every time, the covered wire 5 is in a free state.

【００２６】第２ボンデングを終了すると、図３に図示
したように、カットクランパ７を作用させて被覆付ワイ
ヤ５を挟持し、その後ツ−ルヘッド31とカットクランパ
７とを直上に引き上げる。When the second bonding is completed, as shown in FIG. 3, the cut clamper 7 is actuated to hold the covered wire 5, and then the tool head 31 and the cut clamper 7 are pulled up directly above.

【００２７】このことで被覆付ワイヤ５はパッド11部分
で切断されて、電極21とパッド11間を接続するほぼ弧形
の線分となる。As a result, the covered wire 5 is cut at the portion of the pad 11 and becomes a substantially arc-shaped line segment connecting the electrode 21 and the pad 11.

【００２８】[0028]

【発明の効果】以上説明したように本発明は、レーザ光
を被覆付ワイヤに照射して被覆を昇華し除去した後に、
裸出した導体線部分を第１ボンデング又は第２ボンデン
グするようにしたもので、被覆付ワイヤと電極間、及び
被覆付ワイヤとパッド間の接合の信頼度が高く、またツ
−ルヘッドの目詰まりがなく、さらにまた、第１ボンデ
ング時の導体ボールの形成が容易であるという、実用上
で優れた効果を奏する。As described above, according to the present invention, after the coated wire is irradiated with laser light to sublimate and remove the coating,
The bare conductor wire portion is bonded to the first or second bond, so that the reliability of bonding between the coated wire and the electrode and between the coated wire and the pad is high, and the tool head is clogged. In addition, the conductor ball is easily formed during the first bonding, which is an excellent effect in practical use.

【図面の簡単な説明】[Brief description of drawings]

【図１】 (A),(B),(C) は第１の発明の工程図1 (A), (B), and (C) are process diagrams of the first invention.

【図２】 (A),(B) は第２の発明の工程図2 (A) and (B) are process diagrams of the second invention.

【図３】 本発明のワイヤボンデング後の断面図FIG. 3 is a cross-sectional view after wire bonding of the present invention.

【図４】 半導体チップの実装構造を示す断面図FIG. 4 is a cross-sectional view showing a mounting structure of a semiconductor chip.

【符号の説明】[Explanation of symbols]

１ 回路基板、 ２ 半
導体チップ、３ ワイヤボンデングツール、
４ レーザ光、５ 被覆付ワイヤ、 ６ 放
電トーチ、７ カットクランパ、
11 パッド、21 電極、 31
ツ−ルヘッド、32 孔、 51 導体
線、52 被覆、 55
導体ボール、1 circuit board, 2 semiconductor chips, 3 wire bonding tool,
4 laser light, 5 coated wire, 6 discharge torch, 7 cut clamper,
11 pads, 21 electrodes, 31
Tool head, 32 holes, 51 conductor wire, 52 sheath, 55
Conductor ball,

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 ワイヤボンデングツール(3) を用いて、
回路基板(1) にダイボンデングした半導体チップ(2) の
電極(21)に、被覆付ワイヤ(5) の先端部を接続する第１
ボンデングにおいて、 該ワイヤボンデングツール(3) のツ−ルヘッド(31)の先
端から引き出した該被覆付ワイヤ(5) の先端部に、レー
ザ光(4) を照射して該被覆付ワイヤ(5) の先端部の被覆
(52)を昇華し除去して導体線(51)を裸出させた後に、該
裸出部を加熱溶融して該裸出部を導体ボール(55)とし、 その後、該導体ボール(55)部分を該電極(21)にボンデン
グすることを特徴とする被覆付ワイヤのボンデング方
法。1. Using a wire bonding tool (3),
The tip of the coated wire (5) is connected to the electrode (21) of the semiconductor chip (2) die-bonded to the circuit board (1).
In bonding, the tip of the coated wire (5) pulled out from the tip of the tool head (31) of the wire bonding tool (3) is irradiated with a laser beam (4) to irradiate the coated wire (5). ) Coating
(52) is sublimated and removed to bare the conductor wire (51), and then the bare portion is heated and melted to form the bare ball (55), and then the conductor ball (55) A method for bonding a coated wire, characterized in that a portion is bonded to the electrode (21). 【請求項２】 ワイヤボンデングツール(3) を用いて、
被覆付ワイヤ(5) の後端部を回路基板(1) のパッド(11)
に接続する第２ボンデングにおいて、 ツ−ルヘッド(31)の先端部から引き出された該被覆付ワ
イヤ(5) の所望の個所に、レーザ光(4) を照射して被覆
(52)を昇華し除去して導体線(51)の中間部を裸出させた
後に、該裸出部をパッド(11)にボンデングすることを特
徴とする被覆付ワイヤのボンデング方法。2. Using a wire bonding tool (3),
Attach the back end of the coated wire (5) to the pad (11) on the circuit board (1).
In the second bonding to be connected to, the desired portion of the covered wire (5) pulled out from the tip of the tool head (31) is irradiated with laser light (4) to cover it.
A method for bonding a covered wire, comprising sublimating and removing (52) to expose a middle portion of a conductor wire (51) and then bonding the bare portion to a pad (11).
JP3198170A 1991-08-08 1991-08-08 Bonding method of sheathed wire Withdrawn JPH0547828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3198170A JPH0547828A (en) 1991-08-08 1991-08-08 Bonding method of sheathed wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3198170A JPH0547828A (en) 1991-08-08 1991-08-08 Bonding method of sheathed wire

Publications (1)

Publication Number Publication Date
JPH0547828A true JPH0547828A (en) 1993-02-26

Family

ID=16386638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3198170A Withdrawn JPH0547828A (en) 1991-08-08 1991-08-08 Bonding method of sheathed wire

Country Status (1)

Country Link
JP (1) JPH0547828A (en)

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