JPH0547238A - Semiconductor composition and power cable - Google Patents
Semiconductor composition and power cableInfo
- Publication number
- JPH0547238A JPH0547238A JP3228813A JP22881391A JPH0547238A JP H0547238 A JPH0547238 A JP H0547238A JP 3228813 A JP3228813 A JP 3228813A JP 22881391 A JP22881391 A JP 22881391A JP H0547238 A JPH0547238 A JP H0547238A
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- eva
- semiconductive
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特性的に優れた、特に
耐熱性に優れた半導電性組成物およびこれを半導電層に
用いた電力ケーブルに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductive composition having excellent characteristics, particularly excellent heat resistance, and a power cable using the semiconductive composition.
【０００２】[0002]
【従来の技術】架橋ポリエチレン絶縁ケーブル（ＣＶケ
ーブル）などの電力ケーブルにあっては、ケーブル間の
接続時などに行われる端末処理作業を容易にするため
に、架橋ポリエチレンや架橋ポリエチレンプロピレンゴ
ムなどからなる絶縁層から半導電層を剥ぎ取り易くする
必要がある。また、同時に電力ケーブルに曲げなどの外
力が加わった際に、絶縁層と半導電層とが界面で剥離を
起こさないことも必要である。2. Description of the Related Art Power cables such as cross-linked polyethylene insulated cables (CV cables) are made of cross-linked polyethylene or cross-linked polyethylene propylene rubber in order to facilitate terminal treatment work when connecting cables. It is necessary to easily peel off the semiconductive layer from the insulating layer. At the same time, it is also necessary that the insulating layer and the semiconductive layer do not separate at the interface when an external force such as bending is applied to the power cable.
【０００３】このため、半導電層の組成物としては、絶
縁層に対して適度の剥離性と適度の密着性を併せ持つこ
とが必要とされる。このような特性を満足する半導電性
組成物、特に外部半導電層をなす性組成物の一つとし
て、従来、エチレン酢酸ビニル共重合体に塩化ビニルを
グラフト化したポリマ（ＥＶＡ−ＰＶＣ）とエチレン酢
酸ビニル共重合体（ＥＶＡ）とを、ブレンド比９０／１
０〜２０／８０の範囲で配合し、これにカーボンブラッ
クなどの導電性付与剤を添加したブレンド組成物が提案
されている。Therefore, the composition of the semiconductive layer is required to have both appropriate releasability and appropriate adhesion to the insulating layer. As one of the semiconductive compositions satisfying such characteristics, in particular, the external semiconductive layer-forming composition, a polymer obtained by grafting vinyl chloride onto an ethylene vinyl acetate copolymer (EVA-PVC) has hitherto been used. Ethylene vinyl acetate copolymer (EVA) with a blend ratio of 90/1
A blend composition has been proposed in which it is blended in the range of 0 to 20/80 and a conductivity-imparting agent such as carbon black is added thereto.
【０００４】[0004]
【発明が解決しようとする課題】ところが、この半導電
性組成物の場合、特性的に改善すべき余地があった。つ
まり、特に耐熱性が劣る他、その他の特性、例えば押出
加工性、分散性などにおいても劣っていた。また、この
組成物では、安定剤としてＭｇＯやＰｂＯなどの添加が
必要とされるが、これらの物質には毒性があって環境衛
生上好ましくなく、さらに、分散性を悪化させるという
問題もあった。However, in the case of this semiconductive composition, there is room for improvement in characteristics. That is, in addition to being particularly inferior in heat resistance, it was also inferior in other properties such as extrusion processability and dispersibility. In addition, this composition requires the addition of MgO, PbO, or the like as a stabilizer, but these substances are toxic and unfavorable for environmental hygiene, and there is a problem that the dispersibility is deteriorated. ..
【０００５】そこで、本発明者等が鋭意研究したとこ
ろ、上記ブレンド比が９０／１０〜２０／８０のＥＶＡ
−ＰＶＣとＥＶＡとのブレンド物に適量の導電性付与剤
を混合した組成物に、さらに、ゼオライトを添加する
と、上記欠点が解消されることを見出した。Then, as a result of diligent research by the present inventors, EVA having a blend ratio of 90/10 to 20/80 was obtained.
It has been found that the above drawbacks can be eliminated by further adding zeolite to a composition prepared by mixing an appropriate amount of a conductivity-imparting agent in a blend of PVC and EVA.
【０００６】本発明は、このような観点に立ってなされ
たものである。The present invention has been made from this point of view.
【０００７】[0007]
【課題を解決するための手段およびその作用】かゝる本
発明の一つは、ＥＶＡ−ＰＶＣとＥＶＡとを、ブレンド
比９０／１０〜２０／８０で配合し、これに適量の導電
性付与剤を添加したブレンド組成物の１００重量部に、
ゼオライトを０．５〜２０重量部配合してなる半導電性
組成物にある。[Means for Solving the Problem and Its Action] One of the present inventions is to blend EVA-PVC and EVA at a blending ratio of 90/10 to 20/80, and impart an appropriate amount of conductivity to them. To 100 parts by weight of the blended composition with the agent added,
It is a semiconductive composition containing 0.5 to 20 parts by weight of zeolite.
【０００８】本発明のもう一つは、上記半導電性組成物
を少なくとも外部半導電層に用いた電力ケーブルにあ
る。Another aspect of the present invention is a power cable using the above semiconductive composition in at least an outer semiconductive layer.
【０００９】本発明において、上記ＥＶＡ−ＰＶＣとＥ
ＶＡとのブレンド比を、９０／１０〜２０／８０の範囲
にしたのは、この範囲とすることにより、半導電層とし
たとき、絶縁層に対して適度の剥離性と適度の密着性が
保持されるからである。また、本発明で添加されるカー
ボンブラックなどの導電性付与剤の配合量としては、Ｅ
ＶＡ−ＰＶＣとＥＶＡとのブレンド組成物１００重量部
に対して、３０〜１００重量部が好ましい。つまり、３
０重量部未満では所望の半導電性が得られず、また１０
０重量部を越えると導電性が高くなり過ぎると同時に押
出加工性や機械的強度が低下するようになるからであ
る。In the present invention, the above EVA-PVC and E
The blending ratio with VA is set in the range of 90/10 to 20/80. By setting it in this range, when the semiconductive layer is formed, appropriate peelability and appropriate adhesion to the insulating layer are obtained. This is because it is retained. The amount of the conductivity-imparting agent such as carbon black added in the present invention is E
30 to 100 parts by weight is preferable for 100 parts by weight of the blend composition of VA-PVC and EVA. That is, 3
If it is less than 0 parts by weight, the desired semiconductivity cannot be obtained, and 10
This is because if the amount exceeds 0 parts by weight, the electroconductivity becomes too high, and at the same time, the extrudability and the mechanical strength deteriorate.
【００１０】また、本発明で用いられるゼオライトは、
結晶性アルミノケイ酸塩で、ＳｉＯ2 四面体とＡｌＯ2
四面体とが三次元網目状に結合した鉱物の総称で、多く
の天然および合成のものが知られており、結晶構造の相
違などにより、次のようなものが挙げられる。ホウフッ
石群（Ｎａ16Ａｌ16Ｓｉ32Ｏ96・１２Ｈ2 Ｏなど）、ホ
ウソーダ石群（Ｎａ6 Ａｌ6 Ｓｉ6 Ｏ24・７．５Ｈ2 Ｏ
など）、Ａ型ゼオライト群（Ｎａ12Ａｌ12Ｓｉ12Ｏ48・
２７Ｈ2 Ｏなど）、ホージャサイト群（（Ｎａ2 ，
Ｋ2 ，Ｃａ，Ｍｇ）29.5Ａｌ59Ｓｉ133 Ｏ384 ・２３５
Ｈ2 Ｏなど）、ソーダフッ石群（Ｎａ16Ａｌ16Ｓｉ24Ｏ
80・１６Ｈ2 Ｏなど）、モルデナイト群（Ｎａ8 Ａｌ8
Ｓｉ40Ｏ240 ・６４Ｈ2 Ｏなど）、きフッ石群（Ｃａ4
Ａｌ8 Ｓｉ28Ｏ72・２４Ｈ2 Ｏなど）。そして、また、
これらの表面には、必要により脂肪酸エステルなど施し
て表面処理してもよい。さらに、焼成したものでもよ
い。Further, the zeolite used in the present invention is
Crystalline aluminosilicate, SiO 2 tetrahedron and AlO 2
A tetrahedron is a generic name for minerals that are connected in a three-dimensional network. Many natural and synthetic minerals are known, and the following are listed depending on the difference in crystal structure. Fluorite group (Na 16 Al 16 Si 32 O 96 / 12H 2 O, etc.), borosoda group (Na 6 Al 6 Si 6 O 24 , 7.5H 2 O)
Etc.), A-type zeolite group (Na 12 Al 12 Si 12 O 48.
27H 2 O, etc., faujasite group ((Na 2 ,
K 2 , Ca, Mg) 29.5 Al 59 Si 133 O 384・ 235
H 2 O, etc., soda fluorite group (Na 16 Al 16 Si 24 O
80・ 16H 2 O), mordenite group (Na 8 Al 8
Si 40 O 240 / 64H 2 O, etc.), Fluorite group (Ca 4
Such as Al 8 Si 28 O 72 · 24H 2 O). and again,
If necessary, these surfaces may be surface-treated by applying a fatty acid ester or the like. Further, it may be baked.
【００１１】このようなゼオライトの添加により、耐熱
性、分散性、押出加工性が改善される。また、このもの
を添加すると、それ自体が無毒性のため、従来添加して
いたＭｇＯやＰｂＯなどの安定剤は不要となり、毒性の
問題は解消される。そして、それらの配合量を、ＥＶＡ
−ＰＶＣとＥＶＡおよび導電性付与剤とのブレンド組成
物１００重量部に対して、０．５〜２０重量部としたの
は、０．５重量部未満では耐熱性の改善効果が小さく、
また２０重量部を越えると押出加工性や分散性が悪化す
るからである。Addition of such a zeolite improves heat resistance, dispersibility and extrusion processability. Further, when this compound is added, since it is non-toxic in itself, the stabilizer such as MgO and PbO, which has been conventionally added, becomes unnecessary, and the problem of toxicity is solved. Then, the blending amount of them is
With respect to 100 parts by weight of the blend composition of PVC, EVA and the conductivity-imparting agent, 0.5 to 20 parts by weight means that the effect of improving heat resistance is small when the amount is less than 0.5 parts by weight.
Also, if it exceeds 20 parts by weight, extrusion processability and dispersibility deteriorate.
【００１２】なお、本発明の半導電性組成物には、必要
に応じて、通常添加される他の添加剤、例えば老化防止
剤、加工助剤、架橋剤などを添加することができる。If necessary, the semiconductive composition of the present invention may be added with other additives usually added, such as an antioxidant, a processing aid and a crosslinking agent.
【００１３】次に、かゝる本発明の半導電性組成物を半
導電層に用いた電力ケーブルの一例を図示すると、図１
の如くである。この図において、１は導体で、この導体
１の外周には内部半導電層２が被覆されている。この内
部半導電層２は、ボンドタイプの半導電層であり、本発
明での半導電性組成物とはタイプが異なるものである。
この内部半導電層２上には、絶縁層３が被覆される。こ
の絶縁層３は、架橋ポリエチレンや架橋エチレンプロピ
レンゴムなどのポリレフィン樹脂を押出被覆した後、加
熱して架橋させた樹脂組成物から構成されている。この
絶縁層３上には、本発明に係る半導電性組成物からなる
外部半導電層４が被覆され、さらにこの上には、遮蔽層
５およびシース６が順次被覆されている。Next, an example of a power cable using such a semiconductive composition of the present invention in a semiconductive layer is shown in FIG.
Is like. In this figure, reference numeral 1 is a conductor, and the outer periphery of the conductor 1 is covered with an inner semiconductive layer 2. The internal semiconductive layer 2 is a bond type semiconductive layer and is of a type different from the semiconductive composition of the present invention.
An insulating layer 3 is coated on the inner semiconductive layer 2. The insulating layer 3 is composed of a resin composition obtained by extrusion-coating a polyrefin resin such as cross-linked polyethylene or cross-linked ethylene propylene rubber and then heating and cross-linking it. An outer semiconductive layer 4 made of the semiconductive composition according to the present invention is coated on the insulating layer 3, and a shielding layer 5 and a sheath 6 are sequentially coated on the outer semiconductive layer 4.
【００１４】この本発明になる外部半導電層４は、絶縁
層３に対して適度の剥離性と適度の密着性を併せ持つた
め、端末処理作業の際、絶縁層３から外部半導電層４を
剥ぎ取ることが比較的容易にできる一方、電力ケーブル
に曲げなど外力が加わっても、絶縁層３と外部半導電層
４との間で簡単に界面剥離が起ることはない。さらに、
この外部半導電層４の組成物には、上記ゼオライトが含
まれているため、大幅な耐熱性の向上が図られる他、当
該物質の分散性もよく、また押出加工も良好で、表面を
平滑にして押し出すことができる。Since the outer semiconductive layer 4 according to the present invention has both appropriate releasability and appropriate adhesion to the insulating layer 3, the outer semiconductive layer 4 is removed from the insulating layer 3 during the terminal treatment work. It can be peeled off relatively easily, but even if an external force such as bending is applied to the power cable, interface peeling does not occur easily between the insulating layer 3 and the outer semiconductive layer 4. further,
Since the composition of the outer semiconductive layer 4 contains the above-mentioned zeolite, the heat resistance is greatly improved, the dispersibility of the substance is also good, and the extrusion process is good, and the surface is smooth. Can be pushed out.
【００１５】[0015]
【実施例】表１に示した配合による、ゼオライトを用い
た場合と、用いない場合の種々の半導電性組成物を作り
（実施例１〜５、比較例１〜２）、この組成物の特性試
験を行い、その試験結果も、当該表１に併記した。な
お、組成物の特性試験は、次のようにして行った。先
ず、上記表１の配合による混和物を常法に従って混練し
た後、厚さ約１ｍｍのシートに成型した。そして、この
半導電性シートを、表面の不純物を充分に除去し清澄に
した銅板の両面にプレスにより圧着しつつ、１８０℃×
３０分加熱した後、室温で冷却して試料片を作り、この
試料片をＲ，Ｈ１００％、室温のデシケータ中にそれぞ
れの時間放置後取り出し、この半導電性シートを取り除
き、銅板表面の変色状態を観察した。また、その他の物
性として、熱安定性、表面平滑性、剥離力を調べた。な
お、ここで、表面平滑性は、１８ｍｍ押出機によりテー
プ状に押し出し、その表面の突起を数えた。この際の評
価は、良＝１００ｃｍ2 当たり０．１ｍｍ以上の突起が
２０未満、やや良＝１００ｃｍ2 当たり０．１ｍｍ以上
の突起が２０〜１００未満、不良＝１００ｃｍ2 当たり
０．１ｍｍ以上の突起が１００以上を場合を示す。ま
た、剥離力は、ＤＣＰを２部、ノクラック３００を０．
２部を含むポリエチレンの２ｍｍ厚シートと、上記１ｍ
ｍ厚シートとを重ねて、２００℃×３０分の加圧プレス
を行った後、０．５インチ巾で剥離試験を行った結果を
示してある。[Examples] Various semiconductive compositions with and without zeolite were prepared according to the formulations shown in Table 1 (Examples 1 to 5 and Comparative Examples 1 and 2). A characteristic test was conducted, and the test results are also shown in Table 1. The characteristic test of the composition was performed as follows. First, the mixture having the composition shown in Table 1 was kneaded according to a conventional method, and then molded into a sheet having a thickness of about 1 mm. Then, this semi-conductive sheet is pressed at 180 ° C. while being pressed by press on both sides of a copper plate that has been clarified by sufficiently removing surface impurities.
After heating for 30 minutes, cooling at room temperature to make a sample piece, leaving this sample piece in a desiccator at R, H100% and room temperature for each time and then taking it out, removing this semi-conductive sheet, and discoloring the surface of the copper plate Was observed. As other physical properties, thermal stability, surface smoothness, and peeling force were examined. In addition, here, the surface smoothness was extruded in a tape shape by an 18 mm extruder, and the number of protrusions on the surface was counted. Evaluation in this case, good = 100 cm 2 per 0.1mm or more projections is less than 20, somewhat good = 100 cm 2 per 0.1mm or more projections is less than 20 to 100, defect = 100 cm 2 per 0.1mm or more protrusions Indicates 100 or more. Further, the peeling force was 2 parts for DCP and 0.
2 mm thick polyethylene sheet containing 2 parts and 1 m above
The results of performing a peeling test with a 0.5 inch width after stacking a m-thick sheet and pressing at 200 ° C. for 30 minutes are shown.
【００１６】[0016]
【表１】 [Table 1]
【００１７】上記表１から、本発明に係る半導電性組成
物（実施例１〜５）は、ゼオライトが添加されなかった
従来品（比較例１〜２）に比較して、優れた耐熱性、耐
腐食性が得られ、また剥離性や表面平滑性に関しては、
従来品と同等程度であることが判る。From Table 1 above, the semiconductive compositions according to the present invention (Examples 1 to 5) are superior in heat resistance to the conventional products (Comparative Examples 1 and 2) to which zeolite is not added. , Corrosion resistance is obtained, and regarding peelability and surface smoothness,
It can be seen that it is equivalent to the conventional product.
【００１８】[0018]
【発明の効果】以上の説明から明らかなように本発明に
よれば、特性の改善された、特に耐熱性、押出加工性、
分散性、安全性などの改善された優れた半導電性組成物
およびこれを半導電層に用いた優れた、ＣＶケーブルな
どの電力ケーブルを得ることができる。As is apparent from the above description, according to the present invention, the characteristics are improved, particularly heat resistance, extrusion processability,
It is possible to obtain an excellent semiconductive composition having improved dispersibility and safety and an excellent power cable such as a CV cable using the same for a semiconductive layer.
【図１】本発明に係る半導電性組成物を外部半導電層に
用いた電力ケーブルの一例を示した縦断面図である。FIG. 1 is a vertical cross-sectional view showing an example of a power cable using a semiconductive composition according to the present invention in an outer semiconductive layer.
１ 導体、 ２ 内部半導電層、 ３ 絶縁層、 ４ 外部半導電層、 ５ 遮蔽層、 ６ シース、 1 conductor, 2 inner semiconductive layer, 3 insulating layer, 4 outer semiconductive layer, 5 shielding layer, 6 sheath,
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ０８Ｌ 23/08 ＬＤＦ 7107−4Ｊ (72)発明者 都丸 勇 東京都江東区木場１丁目５番１号 藤倉電 線株式会社内 (72)発明者 永井 健二 東京都江東区木場１丁目５番１号 藤倉電 線株式会社内 (72)発明者 五十嵐 満 東京都江東区木場１丁目５番１号 藤倉電 線株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI technical display location C08L 23/08 LDF 7107-4J (72) Inventor Isamu Tomaru 1-5 Kiba, Koto-ku, Tokyo No. 1 Fujikura Electric Line Co., Ltd. (72) Inventor Kenji Nagai 1-5-1, Kiba, Koto-ku, Tokyo Fujikura Electric Line Co., Ltd. (72) Inventor Mitsuru Igarashi 1-1-5, Kiba, Koto-ku, Tokyo Fujikura Electric Wire Co., Ltd.
Claims (2)
ルをグラフト化したポリマ（ＥＶＡ−ＰＶＣ）とエチレ
ン酢酸ビニル共重合体（ＥＶＡ）とを、ブレンド比９０
／１０〜２０／８０で配合し、これに適量の導電性付与
剤を添加したブレンド組成物の１００重量部に、ゼオラ
イトを０．５〜２０重量部配合してなることを特徴とす
る半導電性組成物。1. A blend ratio of a polymer (EVA-PVC) obtained by grafting vinyl chloride onto an ethylene-vinyl acetate copolymer and an ethylene-vinyl acetate copolymer (EVA) in a blend ratio of 90.
0.5 to 20 parts by weight of zeolite is added to 100 parts by weight of a blend composition in which a suitable amount of a conductivity-imparting agent is added thereto. Sex composition.
なくとも外部半導電層に用いたことを特徴とする電力ケ
ーブル。2. A power cable comprising the semiconductive composition according to claim 1 in at least an outer semiconductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3228813A JPH0547238A (en) | 1991-08-14 | 1991-08-14 | Semiconductor composition and power cable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3228813A JPH0547238A (en) | 1991-08-14 | 1991-08-14 | Semiconductor composition and power cable |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0547238A true JPH0547238A (en) | 1993-02-26 |
Family
ID=16882265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3228813A Pending JPH0547238A (en) | 1991-08-14 | 1991-08-14 | Semiconductor composition and power cable |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0547238A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001002853A (en) * | 1999-06-16 | 2001-01-09 | Du Pont Mitsui Polychem Co Ltd | Ethylene copolymer composition and its use |
| US20160268018A1 (en) * | 2013-10-23 | 2016-09-15 | Prysmian S.P.A. | Energy cable having a crosslinked electrically insulating layer, and method for extracting crosslinking by-products therefrom |
| US10361010B2 (en) | 2015-04-22 | 2019-07-23 | Prysmian S.P.A. | Energy cable having a crosslinked electrically insulating system, and method for extracting crosslinking by-products therefrom |
-
1991
- 1991-08-14 JP JP3228813A patent/JPH0547238A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001002853A (en) * | 1999-06-16 | 2001-01-09 | Du Pont Mitsui Polychem Co Ltd | Ethylene copolymer composition and its use |
| US20160268018A1 (en) * | 2013-10-23 | 2016-09-15 | Prysmian S.P.A. | Energy cable having a crosslinked electrically insulating layer, and method for extracting crosslinking by-products therefrom |
| AU2013403618B2 (en) * | 2013-10-23 | 2018-08-30 | Prysmian S.P.A. | Energy cable having a crosslinked electrically insulating layer, and method for extracting crosslinking by-products therefrom |
| US10325694B2 (en) * | 2013-10-23 | 2019-06-18 | Prysmian S.P.A | Energy cable having a crosslinked electrically insulating layer, and method for extracting crosslinking by-products therefrom |
| US10361010B2 (en) | 2015-04-22 | 2019-07-23 | Prysmian S.P.A. | Energy cable having a crosslinked electrically insulating system, and method for extracting crosslinking by-products therefrom |
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