JPH0545712U - Substrate development processing equipment - Google Patents
Substrate development processing equipmentInfo
- Publication number
- JPH0545712U JPH0545712U JP10238291U JP10238291U JPH0545712U JP H0545712 U JPH0545712 U JP H0545712U JP 10238291 U JP10238291 U JP 10238291U JP 10238291 U JP10238291 U JP 10238291U JP H0545712 U JPH0545712 U JP H0545712U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cleaning
- chamber
- brush
- development processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【目的】 基板表面のレジスト膜の形成パターンにダメ
ージを生じさせることなく、現像処理後の基板表面から
スカム状残膜、レジスト残渣を効果的に除去する。
【構成】 現像室10と乾燥室14との間に配設される洗浄
室12に、基板Ｗの表面に対し加圧洗浄水を供給するスプ
レイ洗浄部26、基板表面に対し洗浄水を供給しながらス
ポンジブラシ38によって基板表面をブラッシングするブ
ラッシ部28及び純水洗浄部30を設ける。スプレイ洗浄部
からブラッシ部へ基板を搬送するときに、基板表面に対
し洗浄水を供給して基板表面を湿潤状態に保ったままに
する。
(57) [Summary] [Objective] The scum-like residual film and the resist residue are effectively removed from the substrate surface after the development processing without causing damage to the resist film formation pattern on the substrate surface. [Structure] A spray cleaning section 26 for supplying pressurized cleaning water to the surface of a substrate W, and cleaning water to the surface of a substrate, to a cleaning chamber 12 arranged between a developing chamber 10 and a drying chamber 14. Meanwhile, a brush portion 28 for brushing the substrate surface with a sponge brush 38 and a pure water cleaning portion 30 are provided. When the substrate is transported from the spray cleaning unit to the brush unit, cleaning water is supplied to the substrate surface to keep the substrate surface wet.
Description
【０００１】[0001]
この考案は、写真製版法を応用してカラー液晶表示装置（ＬＣＤ）のカラーフ ィルタや半導体装置等を製造する工程において、液晶用ガラス基板や半導体用基 板等の基板の表面に被着形成されたパターン露光済みのフォトレジスト層を現像 処理する場合に使用される基板現像処理装置、特に、現像液による現像処理が終 わった後に基板の表面を洗浄する洗浄部に関する。 This invention is applied to a surface of a substrate such as a glass substrate for liquid crystal or a substrate for semiconductor in a process of manufacturing a color filter of a color liquid crystal display (LCD) or a semiconductor device by applying a photolithography method. The present invention relates to a substrate development processing apparatus used when developing a photoresist layer that has undergone pattern exposure, and particularly to a cleaning unit that cleans the surface of a substrate after the development processing with a developing solution is completed.
【０００２】[0002]
写真製版法を応用して、例えばカラーＬＣＤのカラーフィルタを製造する場合 などにおいて、液晶用ガラス基板等の基板の表面に被着形成されたフォトレジス ト層を所定パターン通りに露光した後、現像処理したときに、現像による形成パ ターン縁にスカム状の残膜が発生してパターンエッヂが鋸状になったり、カラー フィルタのＲＧＢ三色の境界に使用する黒レジストでは現像処理後の基板上の、 本来現像処理によって溶解し基板面が露出していなければいけない部位に、現像 残りとして砂状のレジスト残渣が生じることがある。そこで、このスカム状残膜 やレジスト残渣を、従来は、人手によりスポンジ等を用いて擦り取ったり、ロー ル状のスポンジブラシによって自動的に除去しようとしたりしていた。 For example, when manufacturing color filters for color LCDs by applying the photolithography method, the photoresist layer deposited on the surface of a substrate such as a glass substrate for liquid crystal is exposed in a predetermined pattern and then developed. When processed, a scum-like residual film is generated on the edge of the pattern formed by development, the pattern edge becomes saw-shaped, and the black resist used for the RGB three-color boundary of the color filter is on the substrate after development processing. However, a sand-like resist residue may remain as undeveloped residue on the area where the substrate surface should have been exposed by being originally dissolved by the developing process. Therefore, conventionally, the scum-like residual film and the resist residue have been manually scraped off with a sponge or the like, or automatically removed with a roll-shaped sponge brush.
【０００３】 すなわち、人手によりスポンジ等を用いてスカム状残膜、レジスト残渣を擦り 取る作業を現像処理時に併せて行なったり、或いは、現像、水洗及び乾燥の一連 の工程が終わった後にその作業工程を追加したりしていた。また、ロール状スポ ンジブラシを現像室に配設したり、或いは、乾燥室の次にブラッシング装置を連 設しておいたりして、ロール状スポンジブラシを回転駆動させ、搬送されてきた 基板の表面をそのブラシの表面に接触させて自動的にブラッシングするようにし ていた。さらにまた、現像処理時に基板の表面に対し現像液を０．３kg／cm2以 上の圧力で吹き付け、スプレイ式により現像処理を行なう方法も、従来は試みら れていた。That is, the scum-like residual film and the resist residue are manually scraped off with a sponge or the like at the time of development processing, or after the series of steps of development, washing and drying is completed Was added. In addition, a roll sponge brush is installed in the developing chamber, or a brushing device is provided next to the drying chamber, so that the roll sponge brush is driven to rotate to transfer the surface of the substrate. I made it contact with the surface of the brush and brushed automatically. Furthermore, a method of spraying a developing solution onto the surface of a substrate at a pressure of 0.3 kg / cm 2 or more at the time of the developing treatment and performing the developing treatment by a spray method has been conventionally tried.
【０００４】 また、例えば特開昭５９−５３８４２号公報には、上記したような物理的方法 によらず、現像処理後に非感光部に残存するレジストを、オゾンを含有する雰囲 気で処理することにより、化学的に除去するようにする方法が開示されている。Further, for example, in Japanese Patent Laid-Open No. 59-53842, the resist remaining on the non-photosensitive area after the development processing is processed in an atmosphere containing ozone regardless of the above-mentioned physical method. Thus, a method of chemically removing is disclosed.
【０００５】[0005]
しかしながら、作業者が人手でスカム状残膜、レジスト残渣を擦り取る方法は 、作業結果が不均一になり、また、処理の自動化、量産化の大きな障害となる。 また、ロール状スポンジブラシによってブラッシングする方法は、ロール状のブ ラシに基板表面が接触している時間が短く、このためスカム状残膜、レジスト残 渣の十分な除去効果が得られない。さらに、現像処理時に人手でスカム状残膜、 レジスト残渣を擦り取ったり、ブラッシングしたり、或いは、現像液を加圧して 基板表面へ吹き付けたりする方法では、形成しようとするパターンにダメージを 生じさせる恐れがある。また、水洗、乾燥後にスカム状残膜、レジスト残渣を除 去する方法では、一旦乾燥してしまうと残膜、残渣が基板表面に或る程度強い力 で接着してしまうため、残膜、残渣を除去することができない、といった問題点 がある。 However, the method in which the operator manually scrapes off the scum-like residual film and the resist residue results in non-uniform work results, and is a major obstacle to automation of processing and mass production. Further, in the method of brushing with a roll-shaped sponge brush, the time during which the substrate surface is in contact with the roll-shaped brush is short, and therefore the effect of removing the scum-like residual film and the resist residue cannot be sufficiently obtained. Further, the method of manually scraping off the scum-like residual film and resist residue during development processing, brushing, or spraying the developing solution onto the substrate surface causes damage to the pattern to be formed. There is a fear. Further, in the method of removing the scum-like residual film and the resist residue after washing with water and drying, the residual film and the residue adhere to the surface of the substrate with a certain amount of force once the film is dried. There is a problem that it cannot be removed.
【０００６】 一方、特開昭５９−５３８４２号公報に開示されているように、オゾンを含有 する雰囲気にレジストを晒して残膜、残渣を無くす方法は、オゾン発生装置を必 要とし、また、オゾンによる酸化処理のための特別の処理室を設ける必要がある など、装置の構成が複雑化し、また、反応の制御も難しい、といった問題点があ る。On the other hand, as disclosed in Japanese Patent Laid-Open No. 59-53842, a method of exposing a resist to an atmosphere containing ozone to eliminate residual films and residues requires an ozone generator, and There are problems that the structure of the equipment is complicated and it is difficult to control the reaction, such as the need to provide a special processing chamber for the oxidation treatment with ozone.
【０００７】 この考案は、以上のような事情に鑑みてなされたものであり、現像処理後の基 板の表面に生じるスカム状残膜、レジスト残渣を人手によることなく効果的に除 去し、その際に基板表面の形成パターンにダメージを生じさせるようなことがな く、また、構成も比較的簡単である基板現像処理装置を提供することを技術的課 題とする。The present invention has been made in view of the above circumstances, and effectively removes the scum-like residual film and resist residue generated on the surface of the substrate after the development processing without human labor, In this case, it is a technical subject to provide a substrate development processing apparatus that does not cause damage to the formation pattern on the substrate surface and has a relatively simple configuration.
【０００８】[0008]
この考案では、現像室と乾燥室との間に設けられる洗浄室に、基板の表面に対 し、例えば０．８〜３．０kg／cm2程度の圧力の加圧洗浄液を供給するスプレイ 洗浄部、基板表面に対し洗浄液を供給しながらスポンジ状回転部材によって基板 表面をブラッシングするブラッシ部、及び、基板表面に対し純水を供給する純水 洗浄部を設けるようにした。そして、スプレイ洗浄部からブラッシ部へ基板を搬 送するときに、基板の表面に対し洗浄液を供給するなどして基板表面を湿潤状態 に保つようにする。In this invention, a spray cleaning unit for supplying a pressurized cleaning liquid having a pressure of, for example, 0.8 to 3.0 kg / cm 2 to the surface of the substrate to a cleaning chamber provided between the developing chamber and the drying chamber. A brush portion for brushing the substrate surface with a sponge-like rotating member while supplying a cleaning liquid to the substrate surface, and a pure water cleaning portion for supplying pure water to the substrate surface are provided. Then, when the substrate is carried from the spray cleaning unit to the brush unit, a cleaning liquid is supplied to the surface of the substrate to keep the substrate surface wet.
【０００９】 上記構成の基板現像処理装置では、現像処理時ではなく洗浄段階でスカム状残 膜、レジスト残渣の除去操作が行なわれるため、基板上の形成パターンにダメー ジを与えることがない。また、乾燥以前の洗浄段階であって、基板の表面を湿潤 状態に保ったままスカム状残膜、レジスト残渣の除去操作が行なわれるため、基 板の表面からスカム状残膜、砂状のレジスト残渣を効果的に取り除くことができ る。そして、スカム状残膜、レジスト残渣の除去操作がスプレイ洗浄とブラッシ ングとの両方で行なわれるため、基板上からスカム状残膜、レジスト残渣を完全 に除去することが可能になる。In the substrate developing apparatus having the above structure, since the scum-like residual film and the resist residue are removed in the cleaning stage, not in the developing process, the formation pattern on the substrate is not damaged. In the cleaning step before drying, the scum-like residual film and the resist residue are removed while the substrate surface is kept in a wet state, so that the scum-like residual film and the sand-like resist are removed from the surface of the substrate. The residue can be effectively removed. Since the scum-like residual film and the resist residue are removed by both spray cleaning and brushing, the scum-like residual film and the resist residue can be completely removed from the substrate.
【００１０】[0010]
以下、この考案の好適な実施例について図面を参照しながら説明する。 Preferred embodiments of the present invention will be described below with reference to the drawings.
【００１１】 図１は、この考案の１実施例を示し、基板現像処理装置の概略構成を示す模式 的断面図である。この装置は、現像室10、洗浄室12及び乾燥室14を順次連設して 構成されている。FIG. 1 shows a first embodiment of the present invention and is a schematic cross-sectional view showing a schematic configuration of a substrate developing processing apparatus. This apparatus comprises a developing chamber 10, a cleaning chamber 12 and a drying chamber 14 which are successively connected in series.
【００１２】 現像室10には、前後各一対のニップローラ16、16によって所定の液位に保たれ た浸漬処理槽18が設けられている。浸漬処理槽18内からニップローラ16を溢流し て補助槽22へ流出する現像液20は、図示しない貯留槽へ導かれ、貯留槽から図示 しないポンプにより再び浸漬処理槽18へ戻されることにより、循環させて使用さ れるようになっている。そして、この現像室10内へ基板Ｗが搬入されると、基板 Ｗは、ニップローラ16によって浸漬処理槽18内へ送り込まれ、搬送ロール24によ って浸漬処理槽18内の現像液20中を水平方向へ搬送される間に、基板Ｗの表面に 被着形成された露光済みフォトレジスト層の現像処理が行なわれる。The developing chamber 10 is provided with an immersion treatment tank 18 kept at a predetermined liquid level by a pair of front and rear nip rollers 16, 16. The developer 20 overflowing the nip roller 16 from the immersion processing tank 18 and flowing out to the auxiliary tank 22 is guided to a storage tank (not shown) and is circulated by being returned to the immersion processing tank 18 from the storage tank by a pump (not shown). It is designed to be used. Then, when the substrate W is carried into the developing chamber 10, the substrate W is sent into the dipping treatment tank 18 by the nip roller 16 and is moved by the transport roll 24 into the developer 20 in the dipping treatment tank 18. While being transported in the horizontal direction, the exposed photoresist layer deposited on the surface of the substrate W is developed.
【００１３】 次に、洗浄室12には、スプレイ洗浄部26、ブラッシ部28及び純水洗浄部30が順 番に設けられている。スプレイ洗浄部26には、搬送ロール32によって水平方向へ 搬送される現像済みの基板Ｗの表面に対し、０．８〜３．０kg／cm2、通常は１ ．５〜２．０kg／cm2程度の圧力の加圧洗浄水を供給するスプレイ管34が設けら れている。このスプレイ洗浄部26から基板Ｗを搬送ロール32によって次のブラッ シ部28へ搬送する搬送路の途中、並びにブラッシ部28には、基板Ｗの表面へ洗浄 水を供給する給水管36がそれぞれ配設されている。また、ブラッシ部28には、デ ィスク状スポンジブラシ38が鉛直軸回りに回転自在に配設されており、このディ スク状スポンジブラシ38は、図示しないモータにより高速で回転駆動される。尚 、このディスク状スポンジブラシ38に代えて、水平軸回りに回転駆動されるロー ル状スポンジブラシをブラッシ部28に設けるようにしてもよい。さらに、次の純 水洗浄部30には、搬送ロール32によって搬送される基板Ｗの表面へ純水を供給す る純水供給管40が設けられている。尚、必要に応じ、ブラッシ部28と純水洗浄部 30との間に、超音波発生器と水洗スプレイ管又は水洗槽とを備えた超音波洗浄部 を設けるようにしてもよい。Next, in the cleaning chamber 12, a spray cleaning unit 26, a brush unit 28, and a pure water cleaning unit 30 are sequentially installed. In the spray cleaning unit 26, 0.8 to 3.0 kg / cm 2 , usually 1., with respect to the surface of the developed substrate W which is transported in the horizontal direction by the transport roll 32. A spray pipe 34 for supplying pressurized cleaning water having a pressure of about 5 to 2.0 kg / cm 2 is provided. A water supply pipe 36 for supplying cleaning water to the surface of the substrate W is arranged in the middle of the transport path for transporting the substrate W from the spray cleaning unit 26 to the next brush unit 28 by the transport roll 32, and in the brush unit 28, respectively. It is set up. In addition, a disc-shaped sponge brush 38 is rotatably arranged around the vertical axis in the brush portion 28, and the disc-shaped sponge brush 38 is rotationally driven at high speed by a motor (not shown). Instead of the disc-shaped sponge brush 38, a roller-shaped sponge brush that is driven to rotate about a horizontal axis may be provided in the brush portion 28. Further, the next pure water cleaning unit 30 is provided with a pure water supply pipe 40 for supplying pure water to the surface of the substrate W transported by the transport roll 32. If necessary, an ultrasonic cleaning unit including an ultrasonic generator and a water washing spray pipe or a water washing tank may be provided between the brush unit 28 and the pure water washing unit 30.
【００１４】 現像室10から洗浄室12へ現像済みの基板Ｗが送り込まれてくると、まず、スプ レイ洗浄部26において、加圧洗浄水の高い圧力によって基板Ｗの表面から不要な スカム状残膜、レジストが剥離させられ、その剥離した残膜、レジストが、基板 Ｗの表面に付着した現像液と共に基板Ｗ表面から洗い流される。そして、給水管 36から搬送中の基板Ｗの表面に対し洗浄水が供給されることにより、基板Ｗは、 その表面が湿潤状態のままでブラッシ部28へ送られる。ブラッシ部28では、給水 管36から基板Ｗの表面へ洗浄水を供給しながら、回転するディスク状スポンジブ ラシ38の表面に基板Ｗの表面を接触させることにより、スプレイ洗浄部26での水 洗後に基板Ｗの表面に残ったスカム状残膜、レジスト残渣が完全に取り除かれる 。この際、基板Ｗの表面が湿った状態でブラッシングが行なわれるため、基板Ｗ は乾燥する部分が無く残膜、残滓の除去が効率良く行なわれ、基板Ｗ上の形成パ ターンがダメージを受けることもない。ブラッシ部28でのブラッシングを終えた 基板Ｗは、最後に純水洗浄部30において、純水供給管40から供給される純水によ って表面を仕上げ洗浄される。When the developed substrate W is sent from the developing chamber 10 to the cleaning chamber 12, first, in the spray cleaning unit 26, unnecessary scum-like residue remains on the surface of the substrate W due to the high pressure of the pressurized cleaning water. The film and the resist are peeled off, and the peeled residual film and the resist are washed off from the surface of the substrate W together with the developer attached to the surface of the substrate W. Then, the cleaning water is supplied from the water supply pipe 36 to the surface of the substrate W which is being transported, so that the substrate W is sent to the brush section 28 while the surface thereof remains wet. In the brush section 28, while supplying the cleaning water from the water supply pipe 36 to the surface of the substrate W, the surface of the substrate W is brought into contact with the surface of the rotating disc-shaped sponge brush 38, so that the water is washed in the spray cleaning section 26. The scum-like residual film and the resist residue left on the surface of the substrate W are completely removed. At this time, since the brushing is performed while the surface of the substrate W is wet, there is no part of the substrate W to be dried, the residual film and the residue are efficiently removed, and the formation pattern on the substrate W is damaged. Nor. The surface of the substrate W which has been brushed in the brush section 28 is finally cleaned in the pure water cleaning section 30 by the pure water supplied from the pure water supply pipe 40.
【００１５】 乾燥室14には、その入口付近にエアーナイフ42が配設されており、その後方に 乾燥用空気の供給装置44が配設されている。この乾燥室14へ洗浄室12から搬送さ れてきた洗浄済みの基板Ｗの表面に向かってエアーナイフ42から加圧空気を吹き 付けることにより、基板Ｗ表面の水切りを行なった後、乾燥用空気供給装置44か ら基板Ｗの表面に対し加熱空気を吹き付けることにより、基板Ｗの表面を完全に 乾燥させる。そして、所定パターンのレジスト膜が被着形成された基板Ｗが乾燥 室14から搬出される。An air knife 42 is disposed near the entrance of the drying chamber 14, and a drying air supply device 44 is disposed behind it. After the surface of the cleaned substrate W transferred from the cleaning chamber 12 to the drying chamber 14 is blown with pressurized air from the air knife 42, the surface of the substrate W is drained, and then the drying air is dried. The surface of the substrate W is completely dried by blowing heated air from the supply device 44 onto the surface of the substrate W. Then, the substrate W on which the resist film having the predetermined pattern is formed is carried out of the drying chamber 14.
【００１６】[0016]
この考案は以上説明したように構成されかつ作用するので、この考案の基板現 像処理装置を使用すると、現像、洗浄及び乾燥の一連の処理を終えて表面に所要 パターンのレジスト膜が形成された基板の表面に、形成パターンのエッヂを鋸状 とするスカム状残膜や現像残りとして砂状のレジスト残渣が生じたりすることが 無くなり、かつ、形成パターンにダメージが生じるといったことも無い。そして 、従来のように、レジスト残渣の除去作業を人手によった場合におけるような面 倒さや作業効率の悪さが無く、また、装置の構成も比較的簡単である。 Since the present invention is constructed and operates as described above, when the substrate image processing apparatus of the present invention is used, a resist film having a desired pattern is formed on the surface after completion of a series of processings of development, cleaning and drying. The scum-shaped residual film having a saw-shaped edge of the formation pattern and the sand-like resist residue as the development residue are not generated on the surface of the substrate, and the formation pattern is not damaged. Further, unlike the prior art, there is no trouble and inefficient work as in the case of manually removing the resist residue, and the structure of the apparatus is relatively simple.
【図１】この考案の１実施例に係る基板現像処理装置の
概略構成を示す模式的断面図である。FIG. 1 is a schematic sectional view showing a schematic configuration of a substrate development processing apparatus according to an embodiment of the present invention.
10 現像室 12 洗浄室 14 乾燥室 18 浸漬処理槽 20 現像液 24、32 搬送ロール 26 スプレイ洗浄部 28 ブラッシ部 30 純水洗浄部 34 スプレイ管 36 給水管 38 ディスク状スポンジブラシ 40 純水供給管 42 エアーナイフ 44 乾燥用空気供給装置 10 Development room 12 Cleaning room 14 Drying room 18 Immersion processing tank 20 Developer 24, 32 Transport roll 26 Spray cleaning part 28 Brush part 30 Pure water cleaning part 34 Spray pipe 36 Water supply pipe 38 Disc sponge brush 40 Pure water supply pipe 42 Air knife 44 Air supply device for drying
Claims (1)
ト層が被着形成された基板の表面に対し現像液を供給し
て現像処理する現像室と、現像処理後の基板の表面に対
し洗浄液を供給して洗浄する洗浄室と、洗浄後の基板の
表面を液切り、乾燥させる乾燥室とを順次連設した基板
現像処理装置において、前記洗浄室に、基板の表面に対
し加圧洗浄液を供給するスプレイ洗浄部と、基板の表面
を湿潤状態に保ちながら基板を搬送する基板搬送手段
と、基板の表面に対し洗浄液を供給しながらスポンジ状
回転部材によって基板の表面をブラッシングするブラッ
シ部と、基板の表面に対し純水を供給する純水洗浄部と
を具備させたことを特徴とする基板現像処理装置。1. A developing chamber in which a developing solution is supplied to the surface of a substrate on which a photoresist layer having a pattern-exposed surface is formed, and a developing solution is supplied to the surface of the substrate after the developing processing. In a substrate development processing apparatus in which a cleaning chamber for cleaning and a drying chamber for draining and drying the surface of the substrate after cleaning are sequentially connected, a pressurized cleaning liquid is supplied to the surface of the substrate into the cleaning chamber. A spray cleaning unit, a substrate transfer unit that transfers the substrate while keeping the surface of the substrate wet, a brush unit that brushes the surface of the substrate with a sponge-like rotating member while supplying the cleaning liquid to the surface of the substrate, A substrate development processing apparatus comprising: a pure water cleaning unit that supplies pure water to the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991102382U JP2552731Y2 (en) | 1991-11-14 | 1991-11-14 | Substrate development processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991102382U JP2552731Y2 (en) | 1991-11-14 | 1991-11-14 | Substrate development processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0545712U true JPH0545712U (en) | 1993-06-18 |
| JP2552731Y2 JP2552731Y2 (en) | 1997-10-29 |
Family
ID=14325906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991102382U Expired - Lifetime JP2552731Y2 (en) | 1991-11-14 | 1991-11-14 | Substrate development processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2552731Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020203234A (en) * | 2019-06-14 | 2020-12-24 | 凸版印刷株式会社 | Development processing device, and manufacturing method using display device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213847A (en) * | 1987-03-02 | 1988-09-06 | Konica Corp | Method for processing photosensitive planographic printing plate |
| JPS6488547A (en) * | 1987-09-30 | 1989-04-03 | Toshiba Corp | Production of semiconductor device |
| JPH03122648A (en) * | 1989-10-06 | 1991-05-24 | Mitsui Petrochem Ind Ltd | Developing method for positive type photoresist |
-
1991
- 1991-11-14 JP JP1991102382U patent/JP2552731Y2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63213847A (en) * | 1987-03-02 | 1988-09-06 | Konica Corp | Method for processing photosensitive planographic printing plate |
| JPS6488547A (en) * | 1987-09-30 | 1989-04-03 | Toshiba Corp | Production of semiconductor device |
| JPH03122648A (en) * | 1989-10-06 | 1991-05-24 | Mitsui Petrochem Ind Ltd | Developing method for positive type photoresist |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020203234A (en) * | 2019-06-14 | 2020-12-24 | 凸版印刷株式会社 | Development processing device, and manufacturing method using display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2552731Y2 (en) | 1997-10-29 |
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