JPH0536670A - Wet etching device - Google Patents
Wet etching deviceInfo
- Publication number
- JPH0536670A JPH0536670A JP18851891A JP18851891A JPH0536670A JP H0536670 A JPH0536670 A JP H0536670A JP 18851891 A JP18851891 A JP 18851891A JP 18851891 A JP18851891 A JP 18851891A JP H0536670 A JPH0536670 A JP H0536670A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- liquid chemical
- carrier
- tank
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板を薬液に浸
漬してエッチング処理する湿式エッチング装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wet etching apparatus for etching a semiconductor substrate by immersing it in a chemical solution.
【０００２】[0002]
【従来の技術】従来、半導体基板の湿式処理を行なう際
に、処理温度がエッチングを行う際に重要な課題となっ
ていた。この処理温度を一定、かつ均一に制御する方法
としては、通常、処理を行なう薬液を加熱、または冷却
して液温を制御することによって行なっていた。2. Description of the Related Art Conventionally, when a semiconductor substrate is wet-processed, the processing temperature has been an important issue in etching. As a method for controlling the treatment temperature to be constant and uniform, the chemical solution to be treated is usually heated or cooled to control the liquid temperature.
【０００３】図２（ａ）及び（ｂ）は従来の湿式エッチ
ング装置を示すブロック図である。従来、湿式エッチン
グ装置は、図２（ａ）及び（ｂ）に示すように、キャリ
ア６が収納された半導体基板５を浸漬してエッチングす
る薬液を貯える処理槽８と、薬液を循環させる薬液循環
系統と、薬液の温度を制御する温度制御系統とで構成さ
れていた。2A and 2B are block diagrams showing a conventional wet etching apparatus. Conventionally, as shown in FIGS. 2A and 2B, a wet etching apparatus has a processing tank 8 for storing a chemical liquid for immersing and etching a semiconductor substrate 5 in which a carrier 6 is housed, and a chemical liquid circulation for circulating the chemical liquid. It was composed of a system and a temperature control system for controlling the temperature of the chemical solution.
【０００４】また、薬液循環系統は、処理槽８から薬液
を排出させ、フィルタ１０を通して再び処理槽８に供給
していた。一方、温度制御系統は、例えば、図２（ａ）
に示すように、薬液中にヒータ１２及び測温体１１を浸
し、制御部１３で薬液を一定の温度にしたり、また、図
２（ｂ）に示すように、冷却水及びヒータで循環する薬
液自身の温度を制御する熱交換機１４で行われているも
のもある。いずれの場合、薬液の温度制御のみによって
処理温度決めて、処理を行っていた。Further, in the chemical liquid circulation system, the chemical liquid is discharged from the processing tank 8 and supplied again to the processing tank 8 through the filter 10. On the other hand, the temperature control system is, for example, as shown in FIG.
As shown in FIG. 2, the heater 12 and the temperature measuring element 11 are dipped in the chemical solution, the control section 13 keeps the chemical solution at a constant temperature, and as shown in FIG. 2B, the chemical solution circulated by the cooling water and the heater. Some of them are performed by the heat exchanger 14 which controls its own temperature. In either case, the processing temperature was determined and the processing was performed only by controlling the temperature of the chemical solution.
【０００５】[0005]
【発明が解決しようとする課題】上述した従来の湿式エ
ッチング装置では、薬液の温度制御によって処理温度が
設定されるので、処理槽に浸漬される半導体基板、およ
び半導体基板を保持するキャリアは、室温の状態で薬液
に浸漬される。このため薬液と室温に差がある場合、処
理時の基板表面での液温が変動す、エッチング量が変動
し、不均一となるという問題がある。特に、近年、半導
体基板の大口径化にともない投入される半導体基板およ
びキャリアの熱容量が増大するため、浸漬による処理温
度の変動が大きくなる。In the conventional wet etching apparatus described above, since the processing temperature is set by controlling the temperature of the chemical solution, the semiconductor substrate immersed in the processing bath and the carrier holding the semiconductor substrate are kept at room temperature. It is immersed in the chemical solution in the state of. Therefore, when there is a difference between the chemical solution and the room temperature, there are problems that the temperature of the solution on the substrate surface during processing varies and the etching amount varies, resulting in non-uniformity. Particularly, in recent years, as the diameter of the semiconductor substrate is increased, the heat capacities of the semiconductor substrate and the carrier to be charged increase, so that the fluctuation of the processing temperature due to the immersion becomes large.
【０００６】本発明の目的は、かかる問題を解消し、半
導体基板の温度制御することによって処理温度の変動を
なくし、均一なエッチングが出来る湿式エッチング装置
を提供することである。An object of the present invention is to solve the above problems and to provide a wet etching apparatus capable of performing uniform etching by controlling the temperature of a semiconductor substrate to eliminate the fluctuation of the processing temperature.
【０００７】[0007]
【課題を解決するための手段】本発明の湿式エッチング
装置は、半導体基板を浸漬してエッチング処理する薬液
を貯える処理槽と、この処理槽の前段にあるとともに前
記薬液の温度と同程度の温度をもつ雰囲気の収納室とを
備え、前記半導体基板を前記薬液に浸漬する前に前記収
納室に前記半導体基板を保管することを特徴としてい
る。A wet etching apparatus of the present invention includes a processing tank for storing a chemical solution for immersing and etching a semiconductor substrate, and a temperature which is in the preceding stage of the processing tank and is about the same as the temperature of the chemical solution. And a storage chamber of an atmosphere having a storage space, and the semiconductor substrate is stored in the storage chamber before the semiconductor substrate is immersed in the chemical solution.
【０００８】[0008]
【実施例】次に、本発明について図面を参照して説明す
る。図１は本発明の一実施例を示す湿式エッチング装置
のブロック図である。この湿式エッチング装置は、図１
に示すように、薬液処理する処理槽８の前段に、熱を遮
断する収納室４と、この収納室４内にあって半導体基板
５及びキャリア６を加熱する赤外線ランプ１と、この赤
外線ランプ１に電流を供給する電源部２と、収納室４内
の温度を測定する測温体３とを設け、測定温体３の出力
値と処理槽８の測温体１１の温度値と比較し、電源部２
によって収納室４の温度を制御することである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to the drawings. FIG. 1 is a block diagram of a wet etching apparatus showing an embodiment of the present invention. This wet etching apparatus is shown in FIG.
As shown in FIG. 1, in front of the treatment bath 8 for chemical treatment, a storage chamber 4 for shutting off heat, an infrared lamp 1 for heating the semiconductor substrate 5 and the carrier 6 in the storage chamber 4, and the infrared lamp 1 are provided. A power supply unit 2 for supplying an electric current and a temperature measuring body 3 for measuring the temperature in the storage chamber 4 are provided, and the output value of the temperature measuring body 3 and the temperature value of the temperature measuring body 11 of the processing tank 8 are compared, Power supply 2
Is to control the temperature of the storage chamber 4.
【０００９】この湿式エッチング装置の動作は、まず、
処理を行なう半導体基板は、処理槽８へ投入される前
に、収納室４内にキャリア６と半導体基板５とを収納
し、ここで、基板およびキャリアの温度を処理槽８の薬
液の温度と同一にした後に、処理槽８へ投入することで
ある。The operation of this wet etching apparatus is as follows.
The semiconductor substrate to be processed has the carrier 6 and the semiconductor substrate 5 housed in the storage chamber 4 before being introduced into the processing tank 8, where the temperature of the substrate and the carrier is set to the temperature of the chemical solution in the processing tank 8. After making them the same, they are put into the processing tank 8.
【００１０】このように、赤外線ランプの照射による予
備加熱室である収納室にあらかじめ収納し、薬液の温度
と同一の温度に半導体基板を加熱しておけば、薬液内に
浸漬しても、薬液の温度は下がることなく、エッチング
処理温度となり、均一にエッチング処理される。As described above, if the semiconductor substrate is preliminarily stored in the storage chamber which is a preheating chamber by irradiation of the infrared lamp and the semiconductor substrate is heated to the same temperature as the chemical liquid, the chemical liquid can be immersed in the chemical liquid. The temperature does not decrease, and the etching temperature is reached, so that the etching is performed uniformly.
【００１１】[0011]
【発明の効果】以上説明したように、本発明は所定の温
度に加温された薬液に浸漬する前に、半導体基板を収納
し、薬液と同一温度に加熱する収納室を設けることによ
って、薬液の温度の変動を抑え、均一なエッチング処理
出来る湿式エッチング装置が得られるという効果があ
る。As described above, according to the present invention, the semiconductor substrate is housed before being immersed in the chemical solution heated to a predetermined temperature, and the storage chamber for heating the same temperature as the chemical solution is provided. There is an effect that it is possible to obtain a wet etching apparatus capable of suppressing the temperature fluctuations and uniformly etching.
【図１】本発明の一実施例を示す湿式エッチング装置の
ブロック図である。FIG. 1 is a block diagram of a wet etching apparatus showing an embodiment of the present invention.
【図２】従来例を示す湿式エッチング装置のブロック図
である。FIG. 2 is a block diagram of a conventional wet etching apparatus.
１ 赤外線ランプ ２ 電源部 ３，１１ 測温体 ４ 収納室 ５ 半導体基板 ６ キャリア ８ 処理槽 ９ 循環ポンプ １０ フィルタ １２ ヒータ １３，１３ａ 制御部 １４ 熱交換器 DESCRIPTION OF SYMBOLS 1 Infrared lamp 2 Power supply section 3,11 Temperature measuring element 4 Storage room 5 Semiconductor substrate 6 Carrier 8 Processing tank 9 Circulation pump 10 Filter 12 Heater 13, 13a Control section 14 Heat exchanger
Claims (1)
る薬液を貯える処理槽と、この処理槽の前段にあるとと
もに前記薬液の温度と同程度の温度をもつ雰囲気の収納
室とを備え、前記半導体基板を前記薬液に浸漬する前に
前記収納室に前記半導体基板を保管することを特徴とす
る湿式エッチング装置。Claim: What is claimed is: 1. A processing tank for storing a chemical solution for immersing and etching a semiconductor substrate, and a storage chamber in an atmosphere at a stage before the processing tank and having a temperature similar to the temperature of the chemical solution. A wet etching apparatus, characterized in that the semiconductor substrate is stored in the storage chamber before the semiconductor substrate is immersed in the chemical solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18851891A JPH0536670A (en) | 1991-07-29 | 1991-07-29 | Wet etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18851891A JPH0536670A (en) | 1991-07-29 | 1991-07-29 | Wet etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0536670A true JPH0536670A (en) | 1993-02-12 |
Family
ID=16225119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18851891A Pending JPH0536670A (en) | 1991-07-29 | 1991-07-29 | Wet etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0536670A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093657A (en) * | 1996-05-20 | 2000-07-25 | Nec Corporation | Fabrication process of semiconductor device |
| US7097784B2 (en) | 2002-12-27 | 2006-08-29 | Kabushiki Kaisha Toshiba | Etching method and apparatus for semiconductor wafers |
| JP2008252122A (en) * | 2008-06-16 | 2008-10-16 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP2009004675A (en) * | 2007-06-25 | 2009-01-08 | Shin Etsu Handotai Co Ltd | Etching method and device for silicon wafer |
-
1991
- 1991-07-29 JP JP18851891A patent/JPH0536670A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6093657A (en) * | 1996-05-20 | 2000-07-25 | Nec Corporation | Fabrication process of semiconductor device |
| US7097784B2 (en) | 2002-12-27 | 2006-08-29 | Kabushiki Kaisha Toshiba | Etching method and apparatus for semiconductor wafers |
| JP2009004675A (en) * | 2007-06-25 | 2009-01-08 | Shin Etsu Handotai Co Ltd | Etching method and device for silicon wafer |
| JP2008252122A (en) * | 2008-06-16 | 2008-10-16 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
| JP4628448B2 (en) * | 2008-06-16 | 2011-02-09 | 大日本スクリーン製造株式会社 | Substrate processing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19991019 |