JPH05343380A - Method for cleaning semiconductor substrate - Google Patents
Method for cleaning semiconductor substrateInfo
- Publication number
- JPH05343380A JPH05343380A JP14949692A JP14949692A JPH05343380A JP H05343380 A JPH05343380 A JP H05343380A JP 14949692 A JP14949692 A JP 14949692A JP 14949692 A JP14949692 A JP 14949692A JP H05343380 A JPH05343380 A JP H05343380A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- pure water
- semiconductor substrate
- hcl
- supply line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は半導体基板の洗浄方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a semiconductor substrate.
【０００２】[0002]
【従来の技術】半導体装置の製造にあたっては、各工程
間において半導体基板を洗浄する必要がある。そして、
半導体基板の洗浄にあたっては、種々の化学薬品を使用
した洗浄処理が行われるが、通常、その最終工程として
基板に付着した化学薬品を除去するために純水（超純水
を含む）を用いた洗浄が行われている。2. Description of the Related Art In manufacturing a semiconductor device, it is necessary to clean a semiconductor substrate between steps. And
In cleaning semiconductor substrates, cleaning treatments using various chemicals are carried out. Usually, as the final step, pure water (including ultrapure water) is used to remove the chemicals attached to the substrates. It is being cleaned.
【０００３】ところで、半導体基板の表面が露出してい
ると、純水中において基板の表面に厚さが数オングスト
ロームの自然酸化膜が形成されることが知られている。
この自然酸化膜は、その後の半導体装置の製造工程にお
いて、基板の表面に厚さが１００オングストローム以下
の薄膜を形成したさいの薄膜の電気特性を低下させる原
因となることが知られている。By the way, it is known that when the surface of a semiconductor substrate is exposed, a natural oxide film having a thickness of several angstroms is formed on the surface of the substrate in pure water.
It is known that this natural oxide film causes the electrical characteristics of the thin film to be deteriorated when a thin film having a thickness of 100 angstroms or less is formed on the surface of the substrate in the subsequent manufacturing process of the semiconductor device.
【０００４】そこで、従来は、純水中に数ｐｐｍ〜数十
ｐｐｍのＨＦを含有させておき、これにより上記自然酸
化膜の成長を抑制する方法が考えられている。Therefore, conventionally, there has been considered a method of suppressing the growth of the natural oxide film by containing HF of several ppm to several tens of ppm in pure water.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、純水中
にＨＦが含有させられている場合、半導体基板の表面が
露出していると、純水中の微粒子や不純物元素が基板の
表面に付着しやすくなるという問題があり、この問題は
純水中のＨＦ含有量が数ｐｐｍ〜数十ｐｐｍと微量な場
合においても洗浄時間が長くなれば発生して基板を汚染
する。However, when HF is contained in pure water and the surface of the semiconductor substrate is exposed, fine particles and impurity elements in the pure water adhere to the surface of the substrate. However, even if the HF content in pure water is as small as several ppm to several tens of ppm, this problem occurs when the cleaning time is long and contaminates the substrate.
【０００６】この発明の目的は、上記問題を解決した半
導体基板の洗浄方法を提供することにある。An object of the present invention is to provide a method of cleaning a semiconductor substrate which solves the above problems.
【０００７】[0007]
【課題を解決するための手段】この発明による半導体基
板の洗浄方法は、化学薬品を使用した一連の半導体基板
の洗浄処理における最終の純水による洗浄工程を、ＨＦ
１〜１００ｐｐｍおよびＨＣｌ１〜１００ｐｐｍを含む
純水を用いて行うことを特徴とするものである。According to the method of cleaning a semiconductor substrate of the present invention, the final cleaning step with pure water in the cleaning process of a series of semiconductor substrates using chemicals is performed with HF.
It is characterized in that it is performed using pure water containing 1 to 100 ppm and HCl 1 to 100 ppm.
【０００８】上記において、純水中に含まれるＨＦは、
純水中において基板の表面に形成される自然酸化膜をエ
ッチングするという性質を有するが、その含有量が１ｐ
ｐｍ未満であるとこのようなエッチング作用が得られ
ず、１００ｐｐｍを越えると洗浄後に基板表面に残留
し、半導体装置に悪影響を及ぼすので、その含有量は１
〜１００ｐｐｍの範囲内で選択すべきである。In the above, HF contained in pure water is
It has the property of etching the natural oxide film formed on the surface of the substrate in pure water, but its content is 1 p
If it is less than pm, such an etching action cannot be obtained, and if it exceeds 100 ppm, it remains on the substrate surface after cleaning, which adversely affects the semiconductor device.
It should be selected within the range of -100 ppm.
【０００９】純水中のＨＣｌは、純水中の不純物元素イ
オンと反応して塩を形成する性質を有するが、その含有
量が１ｐｐｍ未満であると上記効果が得られず、１００
ｐｐｍを越えると洗浄後に基板表面に残留し、半導体装
置に悪影響を及ぼすので、その含有量は１〜１００ｐｐ
ｍの範囲内で選択すべきである。HCl in pure water has a property of reacting with impurity element ions in pure water to form a salt, but if the content thereof is less than 1 ppm, the above effect cannot be obtained and 100
When it exceeds ppm, it remains on the surface of the substrate after cleaning and adversely affects the semiconductor device, so the content is 1 to 100 pp.
It should be selected within the range of m.
【００１０】上述した量のＨＦおよびＨＣｌを含む純水
を用いての半導体基板の洗浄は、たとえば洗浄槽内に入
れられた上記純水中に半導体基板を浸漬することや、半
導体基板に上記純水を噴射することによって行われる。
上記浸漬または噴射による洗浄時間は５〜１０分程度と
することが好ましい。また、このような洗浄後の乾燥
は、たとえばイソプロピルアルコールのベーパ乾燥や、
スピン乾燥によって行われる。The cleaning of the semiconductor substrate with the pure water containing the above-mentioned amounts of HF and HCl is carried out by, for example, immersing the semiconductor substrate in the pure water placed in a cleaning tank, or by cleaning the semiconductor substrate with the pure water. It is done by spraying water.
The cleaning time by immersion or jetting is preferably about 5 to 10 minutes. In addition, such drying after washing may be performed by vapor drying of isopropyl alcohol,
It is performed by spin drying.
【００１１】[0011]
【作用】純水中に不純物元素が含まれていた場合、ＨＣ
ｌと不純物元素イオンとにより塩が形成され、純水中に
ＨＦが存在することによる不純物元素の半導体基板表面
への付着を防止することができる。しかも、ＨＦにより
純水中で生成する自然酸化膜をエッチング除去すること
ができる。[Operation] When pure water contains an impurity element, HC
It is possible to prevent the adhesion of the impurity element to the surface of the semiconductor substrate due to the presence of HF in pure water because a salt is formed by 1 and the impurity element ion. Moreover, the natural oxide film generated in pure water by HF can be removed by etching.
【００１２】[0012]
【実施例】次にこの発明の実施例について説明する。EXAMPLES Next, examples of the present invention will be described.
【００１３】図１は、化学薬品を使用した一連の半導体
基板の洗浄処理における最終の純水による洗浄処理、す
なわち本発明方法を実施するのに用いる装置の１具体例
を示す。図１において、洗浄装置は、洗浄槽(1) と、洗
浄槽(1) の底部に接続ライン(3) を介して接続された混
合槽(2) とを備えている。混合槽(2) には、純水供給ラ
イン(4) 、ＨＦ供給ライン(5) およびＨＣｌ供給ライン
(6) がそれぞれ接続されている。FIG. 1 shows one specific example of an apparatus used for carrying out the final cleaning treatment with pure water in the cleaning treatment of a series of semiconductor substrates using chemicals, that is, the method of the present invention. In FIG. 1, the cleaning apparatus comprises a cleaning tank (1) and a mixing tank (2) connected to the bottom of the cleaning tank (1) via a connection line (3). The mixing tank (2) has pure water supply line (4), HF supply line (5) and HCl supply line.
(6) are connected respectively.
【００１４】この洗浄装置を用いての半導体基板の洗浄
方法は、次の通りである。すなわち、混合槽(2) 内に、
純水供給ライン(4) 、ＨＦ供給ライン(5) およびＨＣｌ
供給ライン(6) からそれぞれ純水、ＨＦおよびＨＣｌを
供給し、ＨＦ含有量およびＨＣｌ含有量をそれぞれ１〜
１００ｐｐｍの範囲とした洗浄純水を調製する。そし
て、洗浄槽(1) 内において、半導体基板(W) に、化学薬
品を使用した一連の洗浄処理のうちの少なくとも最終の
処理を施した後、混合槽(2) から接続ライン(3)を介し
て洗浄槽(1) の底部に洗浄純水を供給し、この洗浄純水
を洗浄槽(1) からオーバーフローさせることによって化
学薬品を含む洗浄薬液と置換させ、これにより半導体基
板(W) を流水中で浸漬洗浄する。その後、半導体基板
(W) を洗浄純水中から取り出し、乾燥させる。こうし
て、半導体基板(W) に洗浄処理が施される。The semiconductor substrate cleaning method using this cleaning apparatus is as follows. That is, in the mixing tank (2),
Pure water supply line (4), HF supply line (5) and HCl
Pure water, HF and HCl are supplied from the supply line (6), and the HF content and the HCl content are 1 to 1 respectively.
Prepare pure water for cleaning in the range of 100 ppm. Then, in the cleaning tank (1), the semiconductor substrate (W) is subjected to at least the final processing of a series of cleaning processing using chemicals, and then the connection line (3) is connected from the mixing tank (2). The cleaning pure water is supplied to the bottom of the cleaning tank (1) through the cleaning tank (1), and the cleaning pure water is overflowed from the cleaning tank (1) to replace the cleaning chemical liquid containing the chemicals. Immersion wash in running water. Then the semiconductor substrate
(W) is taken out from the purified water and dried. Thus, the semiconductor substrate (W) is cleaned.
【００１５】次に、この発明のさらに具体的な実施例に
付いて説明する。Next, a more specific embodiment of the present invention will be described.
【００１６】この具体的実施例は図１に示す装置を用い
て実施したものである。This concrete example is carried out by using the apparatus shown in FIG.
【００１７】シリコン基板(W) に、ＮＨ4 ＯＨ：Ｈ2 Ｏ
2 ：Ｈ2 Ｏ＝１：１：５の混合洗浄液を用いた洗浄処
理、純水洗浄処理、ＨＣｌ：Ｈ2 Ｏ2 ：Ｈ2 Ｏ＝１：
１：５の混合洗浄液を用いた洗浄処理、純水による洗浄
処理、ならびに濃度１％の弗化水素酸を用いた洗浄処理
をそれぞれ１０分間ずつ行なった。濃度１％の弗化水素
酸を用いた洗浄処理は、洗浄槽(1) 内において浸漬法に
より行なった。On the silicon substrate (W), NH 4 OH: H 2 O
2 : H 2 O = 1: 1: 5 cleaning treatment using a mixed cleaning solution, pure water cleaning treatment, HCl: H 2 O 2 : H 2 O = 1:
The cleaning treatment using the 1: 5 mixed cleaning liquid, the cleaning treatment using pure water, and the cleaning treatment using hydrofluoric acid having a concentration of 1% were performed for 10 minutes each. The cleaning treatment using hydrofluoric acid having a concentration of 1% was performed by the dipping method in the cleaning tank (1).
【００１８】そして、混合槽(2) 内に、純水供給ライン
(4) 、ＨＦ供給ライン(5) およびＨＣｌ供給ライン(6)
からそれぞれ純水、ＨＦおよびＨＣｌを供給し、ＨＦ含
有量およびＨＣｌ含有量をそれぞれ１０ｐｐｍとした洗
浄純水を調製した。ついで、混合槽(2) から接続ライン
(3) を介して洗浄槽(1) の底部に洗浄純水を供給し、こ
の洗浄純水を洗浄槽(1) からオーバーフローさせること
によって弗化水素酸を含む洗浄薬液と置換させ、これに
よりシリコン基板(W) を流水中で１０分間浸漬洗浄し
た。その後、シリコン基板(W) を洗浄純水中から取り出
し、イソプロピルアルコールのベーパにより乾燥させ
た。こうして、シリコン基板(W) に洗浄処理を施した。
このシリコン基板(W) の表面を検査したところ、その表
面には不純物は付着しておらず、しかも自然酸化膜も生
成していなかった。Then, in the mixing tank (2), a pure water supply line
(4), HF supply line (5) and HCl supply line (6)
Pure water, HF, and HCl were respectively supplied from the above to prepare cleaning pure water in which the HF content and the HCl content were each 10 ppm. Then the connection line from the mixing tank (2)
The cleaning pure water is supplied to the bottom of the cleaning tank (1) through (3), and the cleaning pure water is overflowed from the cleaning tank (1) to replace the cleaning chemical liquid containing hydrofluoric acid. The silicon substrate (W) was immersed and washed in running water for 10 minutes. Then, the silicon substrate (W) was taken out from the washed pure water and dried with a vapor of isopropyl alcohol. Thus, the silicon substrate (W) was washed.
When the surface of this silicon substrate (W) was inspected, no impurities were attached to the surface and no natural oxide film was formed.
【００１９】[0019]
【発明の効果】この発明の半導体基板の製造方法によれ
ば、上述のようにして、化学薬品を使用した一連の半導
体基板の洗浄処理において、最終工程に使用する純水中
の不純物が半導体基板表面へ付着するのを防止して、半
導体基板の汚染を防止することができる。しかも、純水
中において半導体基板の表面に生成する自然酸化膜を除
去することができる。As described above, according to the method of manufacturing a semiconductor substrate of the present invention, impurities in pure water used in the final step in the cleaning process of a series of semiconductor substrates using a chemical agent are semiconductor substrates. Contamination of the semiconductor substrate can be prevented by preventing adhesion to the surface. Moreover, the natural oxide film generated on the surface of the semiconductor substrate in pure water can be removed.
【図１】この発明の半導体基板の洗浄方法の実施に用い
られる装置の１具体例を示す図である。FIG. 1 is a diagram showing a specific example of an apparatus used for carrying out a method for cleaning a semiconductor substrate according to the present invention.
Ｗ 半導体基板 W semiconductor substrate
Claims (1)
洗浄処理における最終の純水による洗浄工程を、ＨＦ１
〜１００ｐｐｍおよびＨＣｌ１〜１００ｐｐｍを含む純
水を用いて行うことを特徴とする半導体基板の洗浄方
法。1. A final cleaning step with pure water in a series of cleaning processing of a semiconductor substrate using a chemical agent,
A method of cleaning a semiconductor substrate, which is performed using pure water containing ˜100 ppm and HCl 1-100 ppm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14949692A JPH05343380A (en) | 1992-06-09 | 1992-06-09 | Method for cleaning semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14949692A JPH05343380A (en) | 1992-06-09 | 1992-06-09 | Method for cleaning semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05343380A true JPH05343380A (en) | 1993-12-24 |
Family
ID=15476425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14949692A Withdrawn JPH05343380A (en) | 1992-06-09 | 1992-06-09 | Method for cleaning semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05343380A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368415B1 (en) | 1998-01-19 | 2002-04-09 | Mitsubishi Denki Kabushiki Kaisha | Method for washing semiconductor substrate and washing apparatus therefor |
-
1992
- 1992-06-09 JP JP14949692A patent/JPH05343380A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368415B1 (en) | 1998-01-19 | 2002-04-09 | Mitsubishi Denki Kabushiki Kaisha | Method for washing semiconductor substrate and washing apparatus therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990831 |