JPH05343331A - Cvd apparatus - Google Patents
Cvd apparatusInfo
- Publication number
- JPH05343331A JPH05343331A JP14533592A JP14533592A JPH05343331A JP H05343331 A JPH05343331 A JP H05343331A JP 14533592 A JP14533592 A JP 14533592A JP 14533592 A JP14533592 A JP 14533592A JP H05343331 A JPH05343331 A JP H05343331A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- supply head
- gas supply
- wafer
- cooling jacket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＣＶＤ装置、特に、真
空容器内に設けられたヒータと均熱板から成るサセプタ
上に半導体ウエハを載置し、ウエハを加熱することによ
り、ウエハ面上に薄膜を成膜するＣＶＤ装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a CVD apparatus, in particular, a semiconductor wafer is placed on a susceptor composed of a heater and a heat equalizing plate provided in a vacuum container, and the wafer is heated to be heated on the wafer surface. The present invention relates to a CVD apparatus for forming a thin film on a substrate.
【０００２】[0002]
【従来の技術】従来の薄膜製造装置（以下、ＣＶＤ装
置）では、ガス供給ヘッドとウエハを載置するためのサ
セプタが対向する様な構造になっている。そのため、サ
セプタによる輻射熱や、ガスによる伝導によりガス供給
ヘッドが加熱されるため、反応性ガスがガス供給ヘッド
内で熱反応する事を防止したり、塵埃によるウエハ汚染
低減の観点からガス供給ヘッドに反応成生物が付着する
事を防ぐ必要がある。この様な事を解決するために、実
開平3−109329 号公報では、ガス供給ヘッドに水冷ジャ
ケットを設け、水を循環させることにより、ガス供給ヘ
ッド部を冷却している。しかし、この様な構造では、最
も冷却する必要のあるガス噴出口部分の冷却が不十分で
ある。これは、ガス噴出口部分を構成する部材とジャケ
ットを構成する部材が別部材であり、完全に接続（熱的
に）されていないため、特に、チャンバ圧力が低い装置
では、ガス噴出口部を構成する部材からジャケットを構
成する部材への熱伝達効率が低下するためである。2. Description of the Related Art In a conventional thin film manufacturing apparatus (hereinafter referred to as a CVD apparatus), a gas supply head and a susceptor for mounting a wafer face each other. Therefore, the gas supply head is heated by the radiant heat from the susceptor and the conduction by the gas, so that the reactive gas is prevented from thermally reacting in the gas supply head, and the gas supply head is reduced from the viewpoint of reducing wafer contamination by dust. It is necessary to prevent reaction products from attaching. In order to solve such a problem, in Japanese Utility Model Laid-Open No. 3-109329, a water cooling jacket is provided on the gas supply head and water is circulated to cool the gas supply head portion. However, with such a structure, cooling of the gas ejection port portion, which needs to be cooled most, is insufficient. This is because the member forming the gas outlet and the member forming the jacket are separate members and are not completely connected (thermally). Therefore, especially in a device with low chamber pressure, the gas outlet is This is because the heat transfer efficiency from the constituent members to the member constituting the jacket is lowered.
【０００３】[0003]
【発明が解決しようとする課題】反応性ガスがガス供給
ヘッド内で熱反応する事や、ガス供給ヘッドに反応成生
物が付着する事を防止し、反応成生物の塵埃によるウエ
ハ汚染を低減するため、ガス供給ヘッドのガス噴出口部
分を効率的に冷却する。It is possible to prevent the reactive gas from thermally reacting in the gas supply head and to prevent the reaction product from adhering to the gas supply head, and to reduce the wafer contamination due to the dust of the reaction product. Therefore, the gas ejection port portion of the gas supply head is efficiently cooled.
【０００４】[0004]
【課題を解決するための手段】本発明は、ガス供給ヘッ
ド部のガス噴出口部を効率的に冷却するために、 (1）ガス供給ヘッドを囲む様に冷却ジャケットを設け、
ガス供給ヘッドのガスバッファ室から冷却ジャケットを
貫通する複数本の微小孔を有する棒を冷却ジャケットを
構成する板に固定し、この微小孔をガス噴出口として、
反応性ガスをチャンバ内に供給する様にする。According to the present invention, in order to efficiently cool a gas ejection port of a gas supply head, (1) a cooling jacket is provided so as to surround the gas supply head,
A rod having a plurality of minute holes penetrating the cooling jacket from the gas buffer chamber of the gas supply head is fixed to a plate constituting the cooling jacket, and these minute holes are used as gas ejection ports,
Reactive gas is supplied into the chamber.
【０００５】(2）また、この棒の断面形状や配置を変化
させる。(2) Further, the cross-sectional shape and arrangement of the rod are changed.
【０００６】[0006]
【作用】ガス供給ヘッドを囲む様に冷却ジャケットを設
け、ガス供給ヘッドのガスバッファ室から冷却ジャケッ
トを貫通する複数本の微小孔を有する棒を冷却ジャケッ
トを構成する板に固定し、この微小孔をガス噴出口とし
て、反応性ガスをチャンバ内に供給する様な構造にし、
このジャケット部に冷却流体を流すことにより、ガス噴
出口部分の部材を直接冷却できる。これにより、ガス供
給ヘッドのガス噴出口部を効率的に冷却できるので、反
応性ガスがガス供給ヘッド内で熱反応する事や、ガス供
給ヘッドに反応成生物が付着する事を防止し、反応生成
物の塵埃によるウエハ汚染を低減できる。このようにし
て、半導体素子製造過程の歩留まりの向上と高スループ
ット化が実現できる。A cooling jacket is provided so as to surround the gas supply head, and a rod having a plurality of fine holes penetrating the cooling jacket from the gas buffer chamber of the gas supply head is fixed to a plate constituting the cooling jacket. As a gas ejection port, and a structure for supplying a reactive gas into the chamber,
By flowing the cooling fluid through the jacket portion, the member at the gas ejection port can be directly cooled. This allows the gas outlet of the gas supply head to be cooled efficiently, preventing the reactive gas from thermally reacting within the gas supply head and preventing reaction products from adhering to the gas supply head. Wafer contamination due to product dust can be reduced. In this way, it is possible to improve the yield and increase the throughput in the semiconductor device manufacturing process.
【０００７】[0007]
【実施例】以下、本発明の実施例を図１から図７を用い
て説明する。図１は、本発明の第１実施例のＣＶＤ装置
の断面図を、図２（ａ)(ｂ）及び図３は、第１実施例の
ガス供給ヘッドの断面を、図４は、第２実施例のガス供
給ヘッドの断面を、図５は、第３実施例のガス供給ヘッ
ドの断面を、図６は、第４実施例のガス供給ヘッドの断
面を、図７は、その他実施例での貫通棒の断面形状を示
したものである。Embodiments of the present invention will be described below with reference to FIGS. 1 is a sectional view of a CVD apparatus according to a first embodiment of the present invention, FIGS. 2 (a) and 2 (b) and FIG. 3 are sectional views of a gas supply head according to the first embodiment, and FIG. 5 is a cross section of the gas supply head of the third embodiment, FIG. 6 is a cross section of the gas supply head of the fourth embodiment, and FIG. 7 is a cross section of the other embodiment. 3 shows the cross-sectional shape of the penetrating rod.
【０００８】図１を用いて、第１実施例のＣＶＤ装置を
説明する。図１に示す様に、ＣＶＤ装置は、ＣＶＤ反応
炉１，反応性ガスを供給するためのガス供給ヘッド２，
ウエハ４を加熱するためのサセプタ３，ＣＶＤ反応炉１
内に成膜前のウエハ４を持ち込んだり、成膜後のウエハ
４を持ち出すためのウエハ搬送系を装備したロードロッ
ク室を接続するためのポート５，ＣＶＤ反応炉１内を必
要な圧力に設定するための真空排気系を接続するための
ポート６により構成される。The CVD apparatus of the first embodiment will be described with reference to FIG. As shown in FIG. 1, the CVD apparatus includes a CVD reactor 1, a gas supply head 2 for supplying a reactive gas,
Susceptor 3 for heating wafer 4, CVD reactor 1
Port 5 for connecting a load lock chamber equipped with a wafer transfer system for bringing in a wafer 4 before film formation or for taking out the wafer 4 after film formation, and setting the pressure inside the CVD reaction furnace 1 to a required pressure Port 6 for connecting an evacuation system for this purpose.
【０００９】サセプタ３は、ヒータ７と押上棒９，ベロ
ーズ１０，シリンダ１１，サポート１２より成るウエハ
押上機構８及びヒータ７に電力を供給するための電力線
１３により構成される。The susceptor 3 comprises a heater 7, a push-up bar 9, a bellows 10, a wafer 11, a wafer push-up mechanism 8 including a support 12, and a power line 13 for supplying power to the heater 7.
【００１０】図２（ａ)(ｂ）及び図３を用いて、ガス供
給ヘッド２を説明する。図２（ａ）に示す様に、ガス供
給ヘッド２は、ガスバッファ室１８を囲む様に冷却ジャ
ケット２１が、ガスバッファ室１８から冷却ジャケット
２１を貫通する様に、微小孔を有する複数の連結棒１９
が設けられる。また、ガス供給ヘッド２には、反応性ガ
スを導入するための反応性ガス導入口１４，冷却流体を
導入，導出するための冷却流体流入口１５及び冷却流体
流出口１６，ガス噴出口１７，流路２０が付属する。図
２（ｂ）は、図２（ａ）をガス噴出口１７側から見た図
である。この図に示す様に、ガス噴出口１７（連結棒１
９）は、格子状に配置されている。The gas supply head 2 will be described with reference to FIGS. 2A and 2B and FIG. As shown in FIG. 2 (a), the gas supply head 2 has a plurality of connecting holes having minute holes so that the cooling jacket 21 surrounds the gas buffer chamber 18 and passes through the cooling jacket 21 from the gas buffer chamber 18. Stick 19
Is provided. Further, in the gas supply head 2, a reactive gas inlet 14 for introducing a reactive gas, a cooling fluid inlet 15 and a cooling fluid outlet 16 for introducing and discharging a cooling fluid, a gas outlet 17, The flow path 20 is attached. 2B is a view of FIG. 2A viewed from the gas ejection port 17 side. As shown in this figure, the gas ejection port 17 (connecting rod 1
9) are arranged in a grid pattern.
【００１１】通常のＣＶＤ装置では、ＣＶＤ反応炉１内
圧力が０.１ から数Torr程度であり、ガスバッファ室１
８の圧力が数十Torr程度であるので、ガスバッファ室１
８に導かれた反応性ガスは、ガス噴出口１７の孔径が同
一であれば、それぞれの孔から、同一量のガスが噴流と
なって、サセプタ３上のウエハ４に供給される。図３
は、図２（ａ）のＩ−Ｉ断面を示したものである。冷却
流体は、パイプ２２から冷却ジャケット２１に流入し、
せき止め板２４や連結棒１９に衝突しながら、パイプ２
方向に向かって図中矢印の様に流れる。In a normal CVD apparatus, the pressure inside the CVD reactor 1 is about 0.1 to several Torr, and the gas buffer chamber 1
Since the pressure of 8 is about several tens Torr, the gas buffer chamber 1
If the hole diameters of the gas ejection ports 17 are the same, the reactive gas guided to 8 is supplied to the wafer 4 on the susceptor 3 in the form of a jet flow of the same amount of gas from each hole. Figure 3
2 shows the II cross section of FIG. The cooling fluid flows from the pipe 22 into the cooling jacket 21,
While colliding with the dam 24 and the connecting rod 19, the pipe 2
Flows in the direction as shown by the arrow in the figure.
【００１２】この様な装置構成で、ロードロック室（図
示せず）からＣＶＤ反応炉１内のサセプタ３の真上にウ
エハ４を持込み、ウエハ押上機構８を用いて、予め決め
られた温度に設定されたサセプタ３上にウエハ４を設置
する。そして、ガス供給ヘッド２の反応性ガス導入口１
４からガスバッファ室１８に導かれた反応性ガスは、複
数の連結棒１９の微小孔がガス噴出口１７となり、この
ガス噴出口１７からＣＶＤ反応炉１内に噴出する。With such an apparatus structure, the wafer 4 is loaded from the load lock chamber (not shown) directly above the susceptor 3 in the CVD reaction furnace 1, and the wafer pushing mechanism 8 is used to bring it to a predetermined temperature. The wafer 4 is placed on the set susceptor 3. Then, the reactive gas inlet 1 of the gas supply head 2
The reactive gas introduced into the gas buffer chamber 18 from No. 4 is ejected into the CVD reactor 1 from the gas ejection ports 17 by the micro holes of the plurality of connecting rods 19 serving as the gas ejection ports 17.
【００１３】ガス供給ヘッド２は、高温のサセプタ３か
らの輻射熱とＣＶＤ反応炉１内のガスの伝導熱により温
度上昇する。この温度上昇を、冷却流体流入口１５から
導入した冷却流体を、流路２０を経て冷却流体流出口１
６から導出することにより冷却する。この際、冷却流体
が、直接、冷却ジャケット２１を構成する部材を冷却す
る事ができるので、効果的な冷却が実現できる。The temperature of the gas supply head 2 rises due to the radiation heat from the high temperature susceptor 3 and the conduction heat of the gas in the CVD reaction furnace 1. The cooling fluid introduced from the cooling fluid inlet port 15 through this temperature rise is passed through the flow path 20 and the cooling fluid outlet port 1
It is cooled by deriving from 6. At this time, the cooling fluid can directly cool the members constituting the cooling jacket 21, so that effective cooling can be realized.
【００１４】この様に、ガス供給ヘッド２を効率的に冷
却することにより、反応性ガスがガス供給ヘッド２内で
熱反応する事や、ガス供給ヘッド２に反応成生物が付着
する事を防止し、反応生成物の塵埃によるウエハ汚染を
低減できる。こうして、半導体素子製造過程の歩留まり
の向上と高スループット化が実現できる。As described above, by efficiently cooling the gas supply head 2, it is possible to prevent the reactive gas from thermally reacting in the gas supply head 2 and to prevent the reaction product from adhering to the gas supply head 2. In addition, it is possible to reduce wafer contamination due to dust of reaction products. In this way, it is possible to improve the yield and increase the throughput in the semiconductor device manufacturing process.
【００１５】図４は、第２実施例について、図２に示し
た様にガス供給ヘッド２のＩ−Ｉ断面を示した図であ
る。図４に示す様に、この実施例では、直径の異なる２
種類の連結棒１９を用いて、適当に配置し、冷却流体
を、パイプ２２から冷却ジャケット２１に流入させ、せ
き止め板２４や連結棒１９に衝突させながら、パイプ２
方向に向かって、水冷ジャケット２１内を均等に図中矢
印の様に流すことにより、ガス供給ヘッド２を均一に、
効率的に冷却することが出来る。FIG. 4 is a view showing a II cross section of the gas supply head 2 as shown in FIG. 2 in the second embodiment. As shown in FIG. 4, in this embodiment, two different diameters are used.
The pipe 2 is appropriately arranged by using a connecting rod 19 of a kind, the cooling fluid is made to flow from the pipe 22 into the cooling jacket 21, and is made to collide with the dam plate 24 and the connecting rod 19 while
In the same direction, the water cooling jacket 21 is made to flow evenly as shown by the arrow in the figure, so that the gas supply head 2 can be made uniform.
It can be cooled efficiently.
【００１６】この様に、ガス供給ヘッド２を効率的に冷
却することにより、反応性ガスがガス供給ヘッド２内で
熱反応する事や、ガス供給ヘッド２に反応成生物が付着
する事を防止し、反応生成物の塵埃によるウエハ汚染を
低減できる。こうして、半導体素子製造過程の歩留まり
の向上と高スループット化が実現できる。As described above, by efficiently cooling the gas supply head 2, it is possible to prevent the reactive gas from thermally reacting in the gas supply head 2 and to prevent the reaction product from adhering to the gas supply head 2. In addition, it is possible to reduce wafer contamination due to dust of reaction products. In this way, it is possible to improve the yield and increase the throughput in the semiconductor device manufacturing process.
【００１７】図５は、第３実施例について、図２に示し
た様にガス供給ヘッド２のＩ−Ｉ断面を示した図であ
る。図５に示す様に、この実施例では、円形断面と長円
形断面の異なる２種類の連結棒１９を用いて、適当に配
置し、冷却流体を、パイプ２２から冷却ジャケット２１
に流入させ、せき止め板２４や連結棒１９に衝突させな
がら、パイプ２方向に向かって、水冷ジャケット２１内
を均等に図中矢印の様に流すことにより、ガス供給ヘッ
ド２を均一に、効率的に冷却することが出来る。FIG. 5 is a view showing the I-I cross section of the gas supply head 2 as shown in FIG. 2 for the third embodiment. As shown in FIG. 5, in this embodiment, two kinds of connecting rods 19 having different circular cross-sections and oval cross-sections are used to appropriately arrange the cooling fluid, and the cooling fluid is supplied from the pipe 22 to the cooling jacket 21.
To the pipe 2 while allowing the gas supply head 2 to flow evenly in the direction of the pipe 2 in the direction of the pipe 2 as shown by the arrow in the figure, while making the gas supply head 2 uniformly and efficiently. Can be cooled to
【００１８】この様に、ガス供給ヘッド２を効率的に冷
却することにより、反応性ガスがガス供給ヘッド２内で
熱反応する事や、ガス供給ヘッド２に反応成生物が付着
する事を防止し、反応生成物の塵埃によるウエハ汚染を
低減できる。こうして、半導体素子製造過程の歩留まり
の向上と高スループット化が実現できる。As described above, by efficiently cooling the gas supply head 2, it is possible to prevent the reactive gas from thermally reacting in the gas supply head 2 and to prevent the reaction product from adhering to the gas supply head 2. In addition, it is possible to reduce wafer contamination due to dust of reaction products. In this way, it is possible to improve the yield and increase the throughput in the semiconductor device manufacturing process.
【００１９】図６は、第４実施例について、図２に示し
た様にガス供給ヘッド２のＩ−Ｉ断面を示した図であ
る。図６に示す様に、この実施例では、矩形断面の連結
棒１９を用いて、適当に配置し、冷却流体を、パイプ２
２から冷却ジャケット２１に流入させ、せき止め板２４
や連結棒１９に衝突させながら、パイプ２方向に向かっ
て、水冷ジャケット２１内を均等に図中矢印の様に流す
ことにより、ガス供給ヘッド２を均一に、効率的に冷却
することが出来る。FIG. 6 is a view showing a cross section taken along the line II of the gas supply head 2 as shown in FIG. 2 for the fourth embodiment. As shown in FIG. 6, in this embodiment, a connecting rod 19 having a rectangular cross section is used to appropriately arrange the cooling fluid and to connect the cooling fluid to the pipe 2.
2 to the cooling jacket 21, and the weir plate 24
The gas supply head 2 can be cooled uniformly and efficiently by causing the water cooling jacket 21 to flow evenly in the direction of the pipe 2 as shown by the arrow while colliding with the connecting rod 19 or the connecting rod 19.
【００２０】この様に、ガス供給ヘッド２を効率的に冷
却することにより、反応性ガスがガス供給ヘッド２内で
熱反応する事や、ガス供給ヘッド２に反応成生物が付着
する事を防止し、反応生成物の塵埃によるウエハ汚染を
低減できる。このようにして、半導体素子製造過程の歩
留まりの向上と高スループット化が実現できる。As described above, by efficiently cooling the gas supply head 2, it is possible to prevent the reactive gas from thermally reacting in the gas supply head 2 and to prevent the reaction product from adhering to the gas supply head 2. In addition, it is possible to reduce wafer contamination due to dust of reaction products. In this way, it is possible to improve the yield and increase the throughput in the semiconductor device manufacturing process.
【００２１】[0021]
【発明の効果】本発明によれば、ガス供給ヘッドのガス
噴出口部を効率的に冷却できるので、反応性ガスがガス
供給ヘッド内で熱反応する事や、ガス供給ヘッドに反応
成生物が付着する事を防止し、反応生成物の塵埃による
ウエハ汚染を低減できるので、半導体素子製造過程の歩
留まりの向上と高スループット化が実現できる。According to the present invention, the gas ejection port of the gas supply head can be efficiently cooled, so that the reactive gas thermally reacts in the gas supply head and the reaction product is generated in the gas supply head. Since the adherence can be prevented and the wafer contamination due to the dust of the reaction product can be reduced, the yield and the throughput in the semiconductor device manufacturing process can be improved.
【図１】本発明の第１実施例のＣＶＤ装置の構造を示す
断面図。FIG. 1 is a sectional view showing the structure of a CVD apparatus according to a first embodiment of the present invention.
【図２】本発明の第１実施例のガス供給ヘッドの構造を
示す断面図。FIG. 2 is a sectional view showing the structure of the gas supply head of the first embodiment of the present invention.
【図３】図２のガス供給ヘッドのＩ−Ｉ矢視断面図。3 is a cross-sectional view of the gas supply head of FIG. 2 taken along the line I-I.
【図４】本発明の第２実施例のガス供給ヘッドの構造を
示す断面図。FIG. 4 is a sectional view showing a structure of a gas supply head according to a second embodiment of the present invention.
【図５】本発明の第３実施例のガス供給ヘッドの構造を
示す断面図。FIG. 5 is a sectional view showing the structure of a gas supply head according to a third embodiment of the present invention.
【図６】本発明の第４実施例のガス供給ヘッドの構造を
示す断面図。FIG. 6 is a sectional view showing the structure of a gas supply head according to a fourth embodiment of the present invention.
１…ＣＶＤ反応炉、２…ガス供給ヘッド、３…サセプ
タ、４…ウエハ、５，６…ポート、７…ヒータ、８…ウ
エハ押上機構、９…押上棒、１０…ベローズ、１１…シ
リンダ、１２…サポート、１３…電力線、１４…反応性
ガス導入口、１５…冷却流体流入口、１６…冷却流体流
出口、１７…ガス噴出口、１８…ガスバッファ室、１９
…連結棒、２０…流路、２１…冷却ジャケット。DESCRIPTION OF SYMBOLS 1 ... CVD reaction furnace, 2 ... Gas supply head, 3 ... Susceptor, 4 ... Wafer, 5, 6 ... Port, 7 ... Heater, 8 ... Wafer pushing mechanism, 9 ... Push rod, 10 ... Bellows, 11 ... Cylinder, 12 ... Support, 13 ... Power line, 14 ... Reactive gas inlet, 15 ... Cooling fluid inlet, 16 ... Cooling fluid outlet, 17 ... Gas jet, 18 ... Gas buffer chamber, 19
... connecting rod, 20 ... flow path, 21 ... cooling jacket.
Claims (1)
ウエハを設置し、前記ウエハを加熱すると同時に、反応
性ガスを水等の冷却流体により冷却されるガス供給ヘッ
ドのガス噴出口より前記ＣＶＤ反応炉内に供給し、排気
口より真空ポンプでガス排気して、前記ウエハ上に薄膜
を生成するＣＶＤ装置において、ガスバッファ室を囲む
様に冷却ジャケットが、前記ガスバッファ室から前記冷
却ジャケットを貫通する様に微小孔を有する複数本の棒
が設けられた構造のガス供給ヘッドを用いて、前記微小
孔を前記ガス噴出口として、前記反応性ガスを前記ＣＶ
Ｄ反応炉内に供給することを特徴とするＣＶＤ装置。1. A wafer is placed on a susceptor provided in a CVD reaction furnace, and at the same time the wafer is heated, the reactive gas is cooled from a gas injection port of a gas supply head which is cooled by a cooling fluid such as water. In a CVD apparatus in which a thin film is formed on the wafer by supplying gas into a CVD reaction furnace and evacuating a gas from an exhaust port with a vacuum pump, a cooling jacket is provided so as to surround a gas buffer chamber, and the cooling jacket extends from the gas buffer chamber to the cooling jacket. By using a gas supply head having a structure in which a plurality of rods having fine holes are formed so as to penetrate through, the fine holes are used as the gas ejection ports and the reactive gas is used as the CV.
A CVD apparatus characterized by being supplied into a D reactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14533592A JPH05343331A (en) | 1992-06-05 | 1992-06-05 | Cvd apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14533592A JPH05343331A (en) | 1992-06-05 | 1992-06-05 | Cvd apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05343331A true JPH05343331A (en) | 1993-12-24 |
Family
ID=15382796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14533592A Pending JPH05343331A (en) | 1992-06-05 | 1992-06-05 | Cvd apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05343331A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003012165A1 (en) * | 2001-08-01 | 2003-02-13 | Tokyo Electron Limited | Gas treating device and gas treating method |
| JP2009141343A (en) * | 2007-11-12 | 2009-06-25 | Sharp Corp | Vapor phase growth apparatus and method |
| JP2010027675A (en) * | 2008-07-15 | 2010-02-04 | Sharp Corp | Vapor deposition apparatus |
| US20110023782A1 (en) * | 2009-07-28 | 2011-02-03 | Ligadp Co., Ltd. | Gas injection unit for chemical vapor desposition apparatus |
| JP4778655B2 (en) * | 2000-02-04 | 2011-09-21 | アイクストロン、アーゲー | Method and apparatus for depositing one or more coatings on a substrate |
| US10745824B2 (en) | 2016-11-16 | 2020-08-18 | Nuflare Technology, Inc. | Film forming apparatus |
-
1992
- 1992-06-05 JP JP14533592A patent/JPH05343331A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4778655B2 (en) * | 2000-02-04 | 2011-09-21 | アイクストロン、アーゲー | Method and apparatus for depositing one or more coatings on a substrate |
| WO2003012165A1 (en) * | 2001-08-01 | 2003-02-13 | Tokyo Electron Limited | Gas treating device and gas treating method |
| JP2004076023A (en) * | 2001-08-01 | 2004-03-11 | Tokyo Electron Ltd | Gas treatment device and gas treatment method |
| JP2009013504A (en) * | 2001-08-01 | 2009-01-22 | Tokyo Electron Ltd | Gas treating device and gas treating method |
| JP2009141343A (en) * | 2007-11-12 | 2009-06-25 | Sharp Corp | Vapor phase growth apparatus and method |
| JP2010027675A (en) * | 2008-07-15 | 2010-02-04 | Sharp Corp | Vapor deposition apparatus |
| US20110023782A1 (en) * | 2009-07-28 | 2011-02-03 | Ligadp Co., Ltd. | Gas injection unit for chemical vapor desposition apparatus |
| US8808454B2 (en) | 2009-07-28 | 2014-08-19 | Ligadp Co., Ltd. | Gas injection unit for chemical vapor desposition apparatus |
| US10745824B2 (en) | 2016-11-16 | 2020-08-18 | Nuflare Technology, Inc. | Film forming apparatus |
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