JPH05343026A - Ion implantation device - Google Patents
Ion implantation deviceInfo
- Publication number
- JPH05343026A JPH05343026A JP4173651A JP17365192A JPH05343026A JP H05343026 A JPH05343026 A JP H05343026A JP 4173651 A JP4173651 A JP 4173651A JP 17365192 A JP17365192 A JP 17365192A JP H05343026 A JPH05343026 A JP H05343026A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- beam current
- characteristic
- ion beam
- detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 16
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 12
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000005259 measurement Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 32
- 238000010586 diagram Methods 0.000 description 4
- 239000002826 coolant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000190 proton-induced X-ray emission spectroscopy Methods 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004846 x-ray emission Methods 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、放射線計測手段を用い
てイオンビ−ム電流を計測するイオン注入装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implanter for measuring an ion beam current using radiation measuring means.
【０００２】[0002]
【従来の技術】イオン注入装置にあっては、注入ウエフ
ァの高品質化に伴い、イオン注入量の正確な管理が要求
されており、図２は、イオン注入用ウエファディスクを
有するバッチ処理型イオン注入装置に適用されているイ
オンビ−ム電流測定方式の原理構成図である。ウエファ
ディスク１には複数のウエファ２が装着されており、イ
オンビ−ム３は、ウエファ面に垂直に入射し、ウエファ
ディスク１を回転及び並進させるメカニカルスキャン方
式により、イオンをウエファ全面に注入する。図示しな
いイオンビ−ム発生装置の電源の一端は接地されてお
り、イオンビ−ム電流はウエファ２、ウエファディスク
１を介して接地部へと流れるから、ウエファディスク回
転軸４に接触する電極５と接地間に電流計６を接続し、
イオンビ−ム電流を測定することにより、ウエファ２に
対するイオン注入量が判る。2. Description of the Related Art In an ion implantation apparatus, as the quality of an implantation wafer is improved, it is required to accurately control the amount of ion implantation. FIG. 2 shows a batch processing type ion having a wafer disk for ion implantation. It is a principle block diagram of the ion beam current measuring system applied to the implanter. A plurality of wafers 2 are mounted on the wafer disk 1, and the ion beam 3 is vertically incident on the wafer surface to inject ions onto the entire surface of the wafer by a mechanical scanning method of rotating and translating the wafer disk 1. One end of the power source of the ion beam generator (not shown) is grounded, and the ion beam current flows to the grounding portion through the wafer 2 and the wafer disk 1. Therefore, the electrode 5 that contacts the wafer disk rotating shaft 4 is grounded. Connect an ammeter 6 between them,
By measuring the ion beam current, the amount of ion implantation into the wafer 2 can be known.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上述のビーム
電流測定方式にあっては、ウエファディスク１の回転駆
動系の軸受部に摩擦電気が発生し、その電荷による電流
が電流計６に流入すると共に、イオン注入時のウエファ
２の温度上昇を防止するためにウエファディスク１の内
部に冷却媒体を流しているが、この媒体のウエファディ
スク内部での流動、冷却媒体をウエファディスクに導
入、排出する機構部での流動に伴いやはり摩擦電気が発
生し、その電荷が電流計６に入り込む。かかる摩擦電気
による流入電流は、ビーム電流が大きく、ｍＡ（ミリア
ンペア）以上の場合には無視することができるが、高エ
ネルギ（ＭｅＶ）イオン注入装置による低ドーズ（微小
ビーム電流）注入の場合には、ビーム電流はμＡのオー
ダのものであるから、かかる摩擦電気による電流を無視
することができず、このノイズ、誤差分の存在により、
充分な精度で微小ビーム電流を測定することができな
い。また、ウエファディスク１は一般にかなり大きなも
の（〜１ｍφ）であり、周囲からノイズを拾いやすく、
このノイズが電流計６に混入することになる。だからと
言ってウエファディスクを電磁シールドすることは困難
である。However, in the beam current measuring method described above, triboelectricity is generated in the bearing portion of the rotary drive system of the wafer disk 1, and the electric current due to the electric charge flows into the ammeter 6. At the same time, a cooling medium is caused to flow inside the wafer disk 1 in order to prevent the temperature rise of the wafer 2 at the time of ion implantation. The flow of this medium inside the wafer disk, and the cooling medium is introduced into and discharged from the wafer disk. Triboelectricity is also generated with the flow in the mechanical section, and the electric charge enters the ammeter 6. Such an inflow current due to triboelectricity can be ignored when the beam current is large and is equal to or higher than mA (milliampere), but in the case of low dose (small beam current) implantation by a high energy (MeV) ion implanter. Since the beam current is of the order of μA, the current due to such triboelectricity cannot be ignored, and the presence of this noise and error causes
The minute beam current cannot be measured with sufficient accuracy. In addition, the wafer disc 1 is generally quite large (up to 1 mφ), and it is easy to pick up noise from the surroundings.
This noise is mixed in the ammeter 6. However, it is difficult to electromagnetically shield the wafer disk.
【０００４】本発明は、極低ドーズ、したがって極微小
ビーム電流によるイオン注入に際し、ドーズ量及びその
均一性を精密に制御するために、極微小ビ−ム電流を測
定することができるイオン注入装置の提供を目的とする
ものである。The present invention is an ion implantation apparatus capable of measuring an extremely small beam current in order to precisely control the dose amount and its uniformity in ion implantation by an extremely low dose, that is, an extremely small beam current. The purpose is to provide.
【０００５】[0005]
【課題を解決するための手段】本発明は、イオン注入装
置において、イオンビ−ム照射体に対向して設けられた
後方散乱粒子検出器又は特性Ｘ線検出器を有し、イオン
ビ−ム電流を計測することを主たる特徴とするものであ
る。SUMMARY OF THE INVENTION The present invention provides an ion implanter having a backscattering particle detector or a characteristic X-ray detector which is provided so as to face an ion beam irradiator, and the ion beam current is detected. The main feature is to measure.
【０００６】更に本発明は、イオン注入装置において、
イオンが注入されるウエファを装着し、回転するウエフ
ァディスクと、このディスクに取り付けられた重金属片
と、前記ウエファディスクに対向して設けられた後方散
乱粒子検出器又は特性Ｘ線検出器とを有し、イオンビ−
ム電流を計測することを特徴とするものである。Further, the present invention provides an ion implantation apparatus,
It has a rotating wafer disk on which a wafer into which ions are implanted is mounted, a heavy metal piece attached to the disk, and a backscattering particle detector or a characteristic X-ray detector provided facing the wafer disk. AEON Bee
It is characterized by measuring the column current.
【０００７】[0007]
【作用】照射体にイオンビ−ムが当ると、後方散乱粒
子、特性Ｘ線が発生する。この粒子、Ｘ線を検出するこ
とにより、摩擦電気等の影響を受けずにビーム電流、ビ
ーム量を正確に測定することができる。When the ion beam hits the irradiated body, backscattering particles and characteristic X-rays are generated. By detecting these particles and X-rays, the beam current and the beam amount can be accurately measured without being affected by triboelectricity.
【０００８】また、ウエファディスクに重金属片を取り
付けることにより、重金属元素に係る特定の後方散乱粒
子、特性Ｘ線を効果的に発生させることができ、ビーム
電流、イオンビーム量がより正確に測定できる。By attaching a heavy metal piece to the wafer disk, specific backscattering particles and characteristic X-rays related to the heavy metal element can be effectively generated, and the beam current and the ion beam amount can be measured more accurately. ..
【０００９】[0009]
【実施例】図１は本発明の一実施例を示す構成図であ
り、図２と同一符号は同等部分を示す。本発明は、ビー
ム電流、ビーム量の計測手段として、ラザフォード後方
散乱（ＲＢＳ；Ｒｕｔｈｅｒｆｏｒｄ Ｂａｃｋ−Ｓｃ
ａｔｔｅｒｉｎｇ）、粒子励起Ｘ線放射（ＰＩＸＥ；Ｐ
ａｒｔｉｃｌｅ Ｉｎｄｕｃｅｄ Ｘ−ｒａｙ Ｅｍｉ
ｓｓｉｏｎ）等による放射線計測装置を用いたものであ
り、ウエファディスク１におけるイオンビ−ム３の照射
箇所に対向させて後方散乱粒子または特性Ｘ線検出器７
を設ける。ウエファディスク１における各ウエファ２の
装着箇所の中間にサンプラとして機能する、例えばＴ
ａ、Ｗ、Ｍｏ等の原子番号Ｚの大きい重金属片８を配置
する。1 is a block diagram showing an embodiment of the present invention, in which the same reference numerals as those in FIG. 2 denote the same parts. The present invention uses Rutherford backscattering (RBS; Rutherford Back-Sc) as means for measuring beam current and beam quantity.
X-ray emission (PIXE; P)
article Induced X-ray Emi
The radiation measuring device according to the present invention is used for the backscattering particles or the characteristic X-ray detector 7 facing the irradiation position of the ion beam 3 on the wafer disk 1.
To provide. The wafer disk 1 functions as a sampler in the middle of the mounting position of each wafer 2, for example, T
A heavy metal piece 8 having a large atomic number Z such as a, W, and Mo is arranged.
【００１０】ウエファディスク１を回転させ、イオンビ
−ム３を照射すると、照射箇所から後方散乱粒子、特性
Ｘ線９が発生し、検出器７に入る。イオンビ−ムの照射
箇所に伴い、ウエファディスク１、ウエファ３、ウエフ
ァの装着部材及びサンプラ８から後方散乱粒子、特性Ｘ
線９が発生するが、検出器７の出力信号を波高分析器１
０に導入し、重金属片８の重金属元素に係る特定エネル
ギ範囲の波高信号を取り出し、計数器１１で計数する。
この計数器で得られた計数率はビーム電流に比例するか
ら、ビーム電流、ビーム量を計測することができる。When the wafer disk 1 is rotated and irradiated with the ion beam 3, backscattered particles and characteristic X-rays 9 are generated from the irradiation position and enter the detector 7. The backscattering particles from the wafer disk 1, the wafer 3, the mounting member of the wafer, and the sampler 8 and the characteristic X according to the irradiation position of the ion beam.
Although the line 9 is generated, the output signal of the detector 7 is changed to the pulse height analyzer 1
Introduced into 0, the peak signal in the specific energy range related to the heavy metal element of the heavy metal piece 8 is taken out and counted by the counter 11.
Since the count rate obtained by this counter is proportional to the beam current, the beam current and the beam amount can be measured.
【００１１】[0011]
【発明の効果】本発明は、以上説明したように、イオン
注入に伴い発生する後方散乱粒子、特性Ｘ線の検出によ
りビーム電流を計測するようにしたから、ウエファディ
スク回転系における摩擦電気、電磁ノイズに影響されず
に、極低ドーズ注入時における極微小電流を計測するこ
とができ、ドーズ量及びその均一性を精密に制御するこ
とができる。As described above, according to the present invention, the beam current is measured by detecting the backscattering particles and the characteristic X-rays generated by the ion implantation. It is possible to measure a very small current at the time of extremely low dose injection without being affected by noise, and it is possible to precisely control the dose amount and its uniformity.
【００１２】またウエファディスクに後方散乱粒子、特
性Ｘ線発生用のサンプラとして機能する重金属片を設け
たから、後方散乱粒子、特性Ｘ線の発生量が増大し、重
金属元素に係る特定エネルギ範囲の波高信号を用いるこ
とにより、極微小ビーム電流計測精度が一層向上する。Further, since the backscattering particles and the heavy metal piece functioning as a sampler for generating the characteristic X-rays are provided on the wafer disk, the amounts of the backscattering particles and the characteristic X-rays are increased, and the wave height of the heavy metal element in the specific energy range is increased. By using the signal, the precision of the extremely small beam current measurement is further improved.
【図１】本発明の一実施例の構成図である。FIG. 1 is a configuration diagram of an embodiment of the present invention.
【図２】従来のイオン注入装置におけるイオンビ−ム電
流測定系の構成図である。FIG. 2 is a configuration diagram of an ion beam current measuring system in a conventional ion implanter.
1 ウエファディスク 2 ウエファ 6 電流計 7 後方散乱粒子または特性Ｘ線検出器 8 重金属片 10 波高分析器 11 計数器 1 Wafer disk 2 Wafer 6 Ammeter 7 Backscattered particle or characteristic X-ray detector 8 Heavy metal piece 10 Wave height analyzer 11 Counter
Claims (2)
れた後方散乱粒子検出器又は特性Ｘ線検出器を有し、イ
オンビ−ム電流を計測することを特徴とするイオン注入
装置。1. An ion implantation apparatus, comprising a backscattering particle detector or a characteristic X-ray detector provided facing an ion beam irradiation object, and measuring an ion beam current.
回転するウエファディスクと、このディスクに取り付け
られた重金属片と、前記ウエファディスクに対向して設
けられた後方散乱粒子検出器又は特性Ｘ線検出器とを有
し、イオンビ−ム電流を計測することを特徴とするイオ
ン注入装置。2. A wafer disk that rotates by mounting a wafer into which ions are implanted, a heavy metal piece attached to the disk, a backscattering particle detector or a characteristic X-ray that is provided so as to face the wafer disk. An ion implanter having a detector and measuring an ion beam current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173651A JPH05343026A (en) | 1992-06-09 | 1992-06-09 | Ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4173651A JPH05343026A (en) | 1992-06-09 | 1992-06-09 | Ion implantation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05343026A true JPH05343026A (en) | 1993-12-24 |
Family
ID=15964570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4173651A Pending JPH05343026A (en) | 1992-06-09 | 1992-06-09 | Ion implantation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05343026A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148112A (en) * | 1994-11-22 | 1996-06-07 | Nec Corp | Ion implanting device |
| KR100681737B1 (en) * | 2005-09-30 | 2007-02-15 | 샤프 가부시키가이샤 | Ion injection device |
-
1992
- 1992-06-09 JP JP4173651A patent/JPH05343026A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08148112A (en) * | 1994-11-22 | 1996-06-07 | Nec Corp | Ion implanting device |
| KR100681737B1 (en) * | 2005-09-30 | 2007-02-15 | 샤프 가부시키가이샤 | Ion injection device |
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