JPH05335875A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH05335875A JPH05335875A JP16530292A JP16530292A JPH05335875A JP H05335875 A JPH05335875 A JP H05335875A JP 16530292 A JP16530292 A JP 16530292A JP 16530292 A JP16530292 A JP 16530292A JP H05335875 A JPH05335875 A JP H05335875A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- temperature
- ceramic substrate
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、無線通信機の高周波帯
（１０ＭＨｚ〜２ＧＨｚ）用のフィルタ，共振器，遅延
線等に用いられる弾性表面波装置に関し、優れた温度安
定度を維持するための温度調整機能を有する弾性表面波
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used for a high frequency band (10 MHz to 2 GHz) filter, resonator, delay line, etc. of a wireless communication device, for maintaining excellent temperature stability. The present invention relates to a surface acoustic wave device having a temperature adjusting function.
【０００２】[0002]
【従来の技術】弾性表面波素子を遅延線として作製する
場合、無線機の小形化のためチップサイズ（外形寸法）
を小さくする必要がありそのため伝搬速度の遅い圧電基
板材料、例えばビスマスゲルマニウムオキサイト（Ｂｉ
12ＧｅＯ20）等が用いられる。表１にＢｉ12ＧｅＯ20の
チップサイズを１としたときの代表的な圧電基板材料の
チップサイズ比と遅延時間温度係数を示す。表１からわ
かるように、Ｂｉ12ＧｅＯ20は他のどの圧電基板材料よ
りチップサイズが小さく、無線機を小形化するために効
果があるが遅延時間温度係数は他の材料より悪く−１３
０ｐｐｍ／℃である。2. Description of the Related Art When a surface acoustic wave element is manufactured as a delay line, a chip size (outer dimension) is required for downsizing a radio device.
Of the piezoelectric substrate material having a slow propagation velocity, for example, bismuth germanium oxide (Bi).
12 GeO 20 ) or the like is used. Table 1 shows the chip size ratio of typical piezoelectric substrate materials and the temperature coefficient of delay time when the chip size of Bi 12 GeO 20 is 1. As can be seen from Table 1, Bi 12 GeO 20 has a smaller chip size than any other piezoelectric substrate material and is effective for downsizing the wireless device, but the delay time temperature coefficient is worse than other materials.
It is 0 ppm / ° C.
【０００３】[0003]
【表１】 [Table 1]
【０００４】[0004]
【発明が解決しようとする課題】このようにＢｉ12Ｇｅ
Ｏ20は伝搬速度が遅いため遅延線用の弾性表面波素子に
用いられるが、遅延時間の温度特性が悪く実用上の問題
点となっている。[Bi 12 Ge]
O 20 is used for a surface acoustic wave element for a delay line because of its slow propagation speed, but it has a practical problem because of poor temperature characteristics of delay time.
【０００５】本発明の目的は、前記従来の欠点を克服す
るために行ったものであり、小形化，薄形化を実現し安
定な温度特性を確保することのできる弾性表面波装置を
提供することにある。The object of the present invention is to overcome the above-mentioned drawbacks of the prior art, and to provide a surface acoustic wave device which can be made compact and thin and which can secure stable temperature characteristics. Especially.
【０００６】[0006]
【課題を解決するための手段】本発明の弾性表面波装置
は、熱伝導性のよいセラミック基板と、該セラミック基
板の一方の面に面実装された弾性表面波素子と、該セラ
ミック基板の他方の面に面接合された熱源素子と、該熱
源素子を加熱して所定の温度に保つために前記セラミッ
ク基板に取付けられた温度制御回路と、前記セラミック
基板の周縁部に密接して前記弾性表面波素子を含む空間
が覆われて封止されたケースとを備えたことを特徴とす
るものである。A surface acoustic wave device according to the present invention comprises a ceramic substrate having good thermal conductivity, a surface acoustic wave element surface-mounted on one surface of the ceramic substrate, and the other surface of the ceramic substrate. Source surface-bonded to the surface of the ceramic substrate, a temperature control circuit mounted on the ceramic substrate for heating the heat source element to maintain a predetermined temperature, and the elastic surface in close contact with the peripheral portion of the ceramic substrate. And a case in which a space including the wave element is covered and sealed.
【０００７】[0007]
【実施例】以下本発明を図面により詳細に説明する。図
１は本発明の一実施例を示す構造断面図、図２は図１の
実施例の底面図、図３は図１のケースを除いた部分の平
面図である。これらの図において、２は熱電導の良いセ
ラミック基板であり、１はセラミック基板２に面実装さ
れた弾性表面波素子、３はセラミック基板１の他方の面
に面接合された薄いフィルム状のヒータ（熱源素子）、
４はヒータ３を加熱するためにセラミック基板１に設け
られた温度制御回路、５はケースである。弾性表面波素
子１とその周囲の空間は、セラミック基板２の周縁部に
密接して覆うように設けられたケース５によって所定の
温度に保たれるようにヒータ３によって加熱される。図
４は図１の温度制御回路４の回路例図である。この温度
制御回路４は、温度センサ７によってセラミック基板２
すなわち弾性表面波素子１の温度を検出しフィルム状ヒ
ータ３の電流値を制御してヒータ３を加熱し周囲温度よ
り高い温度で所定の値になるように制御する。温度設定
用可変抵抗器８により、所望の温度を得ることができ
る。The present invention will be described in detail below with reference to the drawings. 1 is a structural sectional view showing an embodiment of the present invention, FIG. 2 is a bottom view of the embodiment of FIG. 1, and FIG. 3 is a plan view of a portion excluding the case of FIG. In these figures, 2 is a ceramic substrate having good thermal conductivity, 1 is a surface acoustic wave element surface-mounted on the ceramic substrate 2, and 3 is a thin film heater surface-bonded to the other surface of the ceramic substrate 1. (Heat source element),
Reference numeral 4 is a temperature control circuit provided on the ceramic substrate 1 for heating the heater 3, and reference numeral 5 is a case. The surface acoustic wave element 1 and the space around the surface acoustic wave element 1 are heated by the heater 3 so as to be kept at a predetermined temperature by a case 5 provided so as to closely cover the peripheral edge of the ceramic substrate 2. FIG. 4 is a circuit example diagram of the temperature control circuit 4 of FIG. This temperature control circuit 4 uses the temperature sensor 7 to make the ceramic substrate 2
That is, the temperature of the surface acoustic wave element 1 is detected, the current value of the film-shaped heater 3 is controlled, and the heater 3 is heated so that the temperature becomes higher than the ambient temperature to a predetermined value. A desired temperature can be obtained by the temperature setting variable resistor 8.
【０００８】本発明の実測値の例として、ケース内温度
が４４℃になるように温度設定用可変抵抗器８の抵抗値
を設定し、電源Ｖccを印加して約８分後に所望温度４４
℃に達した後、ケース外温度を２５℃→４４℃→５℃→
４４℃と３０分間隔で変化させたときに、ケース外温度
の変化にほとんど影響されず４４℃に保たれるという結
果が得られた。このことにより、温度特性の安定した遅
延線を実現することができた。実施例は遅延線について
説明したが、フィルタや共振器用の弾性表面波素子につ
いても同様の効果が得られる。As an example of the actually measured value of the present invention, the resistance value of the temperature setting variable resistor 8 is set so that the temperature in the case becomes 44 ° C., and the desired temperature 44 is set about 8 minutes after the power source V cc is applied.
After reaching ℃, the outside temperature of the case is changed from 25 ℃ → 44 ℃ → 5 ℃ →
It was found that when the temperature was changed to 44 ° C. at intervals of 30 minutes, the temperature was kept at 44 ° C. without being affected by the change in the temperature outside the case. This made it possible to realize a delay line with stable temperature characteristics. Although the embodiments have been described with respect to the delay line, the same effect can be obtained with a surface acoustic wave element for a filter or a resonator.
【０００９】[0009]
【発明の効果】以上詳細に説明したように、本発明を実
施することにより、温度特性の良くない従来の遅延線用
の弾性表面波素子の温度特性を改善することができ、ま
た、弾性表面波素子，セラミック，フィルムヒータ，温
度制御用回路等を１つのケースに収容して小形化するこ
とができるので、実用上極めて大きい効果がある。As described in detail above, by implementing the present invention, it is possible to improve the temperature characteristics of the conventional surface acoustic wave element for delay line, which has poor temperature characteristics. Since the wave element, the ceramic, the film heater, the temperature control circuit, and the like can be housed in one case to be miniaturized, there is an extremely large practical effect.
【図１】本発明の実施例を示す構造断面図である。FIG. 1 is a structural cross-sectional view showing an embodiment of the present invention.
【図２】図１の一実施例の底面図である。2 is a bottom view of the embodiment of FIG. 1. FIG.
【図３】図１のケースを除いた部分の平面図である。FIG. 3 is a plan view of a portion excluding the case of FIG.
【図４】本発明の温度制御回路例図である。FIG. 4 is a diagram showing an example of a temperature control circuit of the present invention.
１ 弾性表面波素子 ２ セラミック基板 ３ フィルム状ヒータ（熱源素子） ４ 温度制御回路 ５ ケース ６ ワイヤ ７ 温度センサ ８ 温度設定用可変抵抗器 1 surface acoustic wave element 2 ceramic substrate 3 film heater (heat source element) 4 temperature control circuit 5 case 6 wire 7 temperature sensor 8 variable resistor for temperature setting
Claims (1)
素子と、 該セラミック基板の他方の面に面接合された熱源素子
と、 該熱源素子を加熱して所定の温度に保つために前記セラ
ミック基板に取付けられた温度制御回路と、 前記セラミック基板の周縁部に密接して前記弾性表面波
素子を含む空間が覆われて封止されたケースとを備えた
ことを特徴とする弾性表面波装置。1. A ceramic substrate having good thermal conductivity, a surface acoustic wave element surface-mounted on one surface of the ceramic substrate, a heat source element surface-bonded to the other surface of the ceramic substrate, and the heat source. A temperature control circuit attached to the ceramic substrate for heating the element to keep it at a predetermined temperature, and a space including the surface acoustic wave element in close contact with the peripheral edge of the ceramic substrate was covered and sealed. A surface acoustic wave device comprising: a case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04165302A JP3122232B2 (en) | 1992-06-01 | 1992-06-01 | Surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04165302A JP3122232B2 (en) | 1992-06-01 | 1992-06-01 | Surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05335875A true JPH05335875A (en) | 1993-12-17 |
| JP3122232B2 JP3122232B2 (en) | 2001-01-09 |
Family
ID=15809755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04165302A Expired - Fee Related JP3122232B2 (en) | 1992-06-01 | 1992-06-01 | Surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3122232B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495946B1 (en) * | 1999-06-19 | 2002-12-17 | Robert Bosch Gmbh | Piezoelectric actuator for positioning with heat dissipating inactive end section |
| JP2021158463A (en) * | 2020-03-26 | 2021-10-07 | 株式会社大真空 | Piezoelectric oscillator |
-
1992
- 1992-06-01 JP JP04165302A patent/JP3122232B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495946B1 (en) * | 1999-06-19 | 2002-12-17 | Robert Bosch Gmbh | Piezoelectric actuator for positioning with heat dissipating inactive end section |
| JP2021158463A (en) * | 2020-03-26 | 2021-10-07 | 株式会社大真空 | Piezoelectric oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3122232B2 (en) | 2001-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |