JPH05326914A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH05326914A JPH05326914A JP4130462A JP13046292A JPH05326914A JP H05326914 A JPH05326914 A JP H05326914A JP 4130462 A JP4130462 A JP 4130462A JP 13046292 A JP13046292 A JP 13046292A JP H05326914 A JPH05326914 A JP H05326914A
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- transfer
- read
- electrode
- charge
- signal
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、イメージセンサーやイ
メージスキャナー等に用いる固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device used for an image sensor, an image scanner or the like.
【０００２】[0002]
【従来の技術】近年、固体撮像装置は産業用または家庭
用を問わず撮像管にかわり急速に普及してきた。しかし
ながら固体撮像装置の駆動に必要な電極数が増加し、そ
れにつれて消費電力が増大している。この消費電力を低
減する一つの方法として、電極数を低減するために光電
変換部からの信号電荷の読み出しと転送に兼用できる転
送読み出し兼用電極を備えた構造が提案されている。2. Description of the Related Art In recent years, solid-state image pickup devices have rapidly spread in place of image pickup tubes for both industrial and home use. However, the number of electrodes required to drive the solid-state imaging device has increased, and the power consumption has accordingly increased. As one method of reducing this power consumption, a structure provided with a transfer / reading electrode that can be used for both reading and transferring the signal charges from the photoelectric conversion unit in order to reduce the number of electrodes has been proposed.
【０００３】以下に従来の固体撮像装置について、図面
を参照しながら説明する。図５は従来の固体撮像装置の
撮像面の模式図である。図５において、１はＮ型半導体
領域からなる光電変換部、２はＮ型半導体領域からなる
電荷転送部、３は下層の第１転送専用電極、４は上層の
第１転送読み出し兼用電極、５は下層の第２転送専用電
極、６は上層の第２転送読み出し兼用電極である。A conventional solid-state image pickup device will be described below with reference to the drawings. FIG. 5 is a schematic diagram of an imaging surface of a conventional solid-state imaging device. In FIG. 5, reference numeral 1 is a photoelectric conversion part made of an N-type semiconductor region, 2 is a charge transfer part made of an N-type semiconductor region, 3 is a lower first transfer-dedicated electrode, 4 is an upper first-read / read electrode. Is a second transfer-dedicated electrode in the lower layer, and 6 is a second transfer / readout electrode in the upper layer.
【０００４】以上のように構成された固体撮像装置につ
いて、以下その動作を説明する。まず光電変換部１に光
が入射すると信号電荷が発生し蓄積される。そして垂直
ブランキング期間内に転送読み出し兼用電極４または６
に読み出しパルスが加えられると、蓄積されていた信号
電荷は電荷転送部２に読み出される。その後読み出され
た信号電荷は転送専用電極３、５および転送読み出し兼
用電極４、６に転送パルスが加えられると電荷転送部２
内を転送される。この場合、転送読み出し兼用電極４に
高い電圧を印加すると光電変換部１から電荷転送部２へ
信号電荷が読み出されるため転送時には転送専用電極５
ほど高い電圧を印加できないという制約が存在するが、
その点を配慮すれば電荷転送電極と電荷読み出し電極を
一つの電極で兼用することができる。このようにして、
電極数を減らし、消費電力の増加を防止することができ
る。The operation of the solid-state image pickup device configured as described above will be described below. First, when light enters the photoelectric conversion unit 1, signal charges are generated and accumulated. Then, within the vertical blanking period, the electrode 4 or 6 also serving as the readout and reading
When a read pulse is applied to, the accumulated signal charges are read to the charge transfer unit 2. The signal charges read out thereafter are transferred to the charge transfer unit 2 when a transfer pulse is applied to the transfer dedicated electrodes 3 and 5 and the transfer read / read electrodes 4 and 6.
Transferred in. In this case, when a high voltage is applied to the transfer / reading combined electrode 4, signal charges are read out from the photoelectric conversion unit 1 to the charge transfer unit 2, so that the transfer-dedicated electrode 5 is transferred at the time of transfer.
There is a restriction that a high voltage cannot be applied,
Considering that point, one electrode can be used as the charge transfer electrode and the charge read electrode. In this way
It is possible to reduce the number of electrodes and prevent an increase in power consumption.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、転送専用電極の占有する面積が全転送電
極に対して約５０％程度しかないので転送専用電極に加
えるパルスの電圧を大きくした場合でも最大転送可能電
荷量をそれほど大きくできないという課題を有してい
た。However, in the above-mentioned conventional configuration, the area occupied by the transfer-dedicated electrodes is only about 50% of all transfer electrodes. Therefore, when the voltage of the pulse applied to the transfer-dedicated electrodes is increased. However, there is a problem that the maximum transferable charge amount cannot be increased so much.
【０００６】本発明は上記の従来の課題を解決するもの
で、最大転送可能電荷量をより大きくすることのできる
固体撮像装置を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a solid-state image pickup device capable of further increasing the maximum transferable charge amount.
【０００７】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明の固体撮像装置は、電荷転送部の上で転送専用
電極と転送読み出し兼用電極とが絶縁膜を介して配置さ
れており、転送読み出し兼用電極の幅が信号電荷を読み
出す側からその反対側に向けて一定の割合で減少してい
る構成を有している。In order to achieve this object, a solid-state image pickup device according to the present invention has a transfer-dedicated electrode and a transfer-read / read electrode arranged on an electric charge transfer section via an insulating film. The width of the transfer / read electrode also decreases from the side from which the signal charge is read to the side opposite thereto at a constant rate.
【０００８】[0008]
【作用】この構成によって、転送読み出し兼用電極にお
ける信号を読み出す側すなわち光電変換部側の幅は従来
と等しく、転送専用電極の占有する面積を従来よりも大
きくすることができ、転送専用電極に加えるパルスの電
圧を大きくした場合に最大転送可能電荷量を従来よりも
大きくすることができる。With this configuration, the width of the signal reading side of the transfer / read-out electrode, that is, the photoelectric conversion portion side is equal to that in the conventional case, and the area occupied by the transfer-dedicated electrode can be made larger than in the conventional case. When the pulse voltage is increased, the maximum transferable charge amount can be increased more than before.
【０００９】[0009]
【実施例】以下本発明の一実施例における固体撮像装置
について、図面を参照しながら説明する。図１は本発明
の第１の実施例における固体撮像装置の撮像面の模式図
である。図１において、１はＮ型半導体領域からなる光
電変換部、２はＮ型半導体領域からなる電荷転送部、３
は下層の第１転送専用電極、４は上層の第１転送読み出
し兼用電極、５は下層の第２転送専用電極、６は上層の
第２転送読み出し兼用電極である。本実施例では第１転
送読み出し兼用電極４の幅が光電変換部１側から反対側
に向けて一定の割合で狭くなっており、その分第１転送
専用電極３の面積が増大している。そのため光電変換部
１からの読み出し特性は従来と同等であるが第１転送専
用電極３の面積が増加し、結果として最大転送電荷量が
増加する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A solid-state image pickup device according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of an image pickup surface of a solid-state image pickup device according to the first embodiment of the present invention. In FIG. 1, reference numeral 1 is a photoelectric conversion unit made of an N-type semiconductor region, 2 is a charge transfer unit made of an N-type semiconductor region, 3
Is a lower-layer first transfer / read-only electrode, 4 is an upper-layer first transfer / read-only electrode, 5 is a lower-layer second transfer-only electrode, and 6 is an upper-layer second transfer-read / read electrode. In this embodiment, the width of the first transfer / read-only electrode 4 is narrowed from the photoelectric conversion portion 1 side to the opposite side at a constant rate, and the area of the first transfer / dedicated electrode 3 is increased accordingly. Therefore, although the read characteristic from the photoelectric conversion unit 1 is equivalent to that of the conventional one, the area of the first transfer-dedicated electrode 3 increases, and as a result, the maximum transfer charge amount increases.
【００１０】次に本発明の第２の実施例について、図面
を参照しながら説明する。図２は本発明の第２の実施例
における固体撮像装置の撮像面の模式図である。本実施
例では第１転送読み出し兼用電極４の幅が光電変換部１
側から所定の位置まで一定であり、その後一定の割合で
狭くなっている。この場合も光電変換部１からの読み出
し特性は従来と同等であるが第１転送専用電極３の面積
が増加し、結果として最大転送電荷量が増加する。Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 2 is a schematic view of the image pickup surface of the solid-state image pickup device according to the second embodiment of the present invention. In the present embodiment, the width of the first transfer / readout combined electrode 4 is set to the photoelectric conversion unit 1.
It is constant from the side to a predetermined position and then narrows at a constant rate. In this case as well, the read characteristic from the photoelectric conversion unit 1 is equivalent to that of the conventional one, but the area of the first transfer-dedicated electrode 3 increases, and as a result, the maximum transfer charge amount increases.
【００１１】次に本発明の第３の実施例について、図面
を参照しながら説明する。図３は本発明の第３の実施例
における固体撮像装置の撮像面の模式図である。本実施
例では第１転送読み出し兼用電極４の幅が光電変換部１
側から所定の位置まで一定であり、それ以降は一旦狭く
なった状態で一定の幅になっている。この場合も光電変
換部１からの読み出し特性は従来と同等であるが第１転
送専用電極３の面積が増加し、結果として最大転送電荷
量が増加する。Next, a third embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a schematic diagram of an image pickup surface of a solid-state image pickup device according to the third embodiment of the present invention. In the present embodiment, the width of the first transfer / readout combined electrode 4 is set to the photoelectric conversion unit 1.
The width is constant from the side to a predetermined position, and thereafter, the width is once narrowed and has a constant width. In this case as well, the read characteristic from the photoelectric conversion unit 1 is equivalent to that of the conventional one, but the area of the first transfer-dedicated electrode 3 increases, and as a result, the maximum transfer charge amount increases.
【００１２】次に上記の第１、第２、第３の実施例にお
ける最大転送可能電荷量について説明する。図４（ａ）
は本発明の実施例における固体撮像装置の最大転送可能
電荷量を模式的に示す図であり、比較のために図４
（ｂ）に従来の固体撮像装置の最大転送可能電荷量を示
した。これらの図において、斜線で示す面積が最大転送
可能電荷量に対応している。図１〜図３に示すように、
本発明の各実施例では全て転送読み出し兼用電極４、６
における信号電荷を読み出す部分の幅は図５に示す従来
の場合と同等であり読み出し特性は変わらない。一方、
転送専用電極３、５の占める面積を従来より大きくする
ことで、図４（ａ）に示すように転送可能な信号電荷量
を図４（ｂ）に示す従来の場合に比べて大きくすること
ができる。Next, the maximum transferable charge amount in the above-mentioned first, second and third embodiments will be described. Figure 4 (a)
FIG. 4 is a diagram schematically showing the maximum transferable charge amount of the solid-state imaging device in the example of the present invention, and FIG.
The maximum transferable charge amount of the conventional solid-state imaging device is shown in (b). In these figures, the shaded area corresponds to the maximum transferable charge amount. As shown in FIGS.
In each of the embodiments of the present invention, the electrodes 4 and 6 also serving as the read / read function are all used.
The width of the portion for reading out the signal charges is the same as that of the conventional case shown in FIG. 5, and the reading characteristics are not changed. on the other hand,
By making the area occupied by the transfer-dedicated electrodes 3, 5 larger than in the conventional case, the transferable signal charge amount as shown in FIG. 4A can be made larger than that in the conventional case shown in FIG. 4B. it can.
【００１３】なお以上の説明は第１転送専用電極３およ
び第１転送読み出し兼用電極４に関してのみ説明した
が、他の転送専用電極および転送読み出し兼用電極に関
しても全く同様である。Although the above description has been made only with respect to the first transfer-dedicated electrode 3 and the first transfer / read-only electrode 4, the same applies to the other transfer-dedicated electrodes and the transfer / read-only electrodes.
【００１４】[0014]
【発明の効果】以上のように本発明は、電荷転送部の上
で転送専用電極と転送読み出し兼用電極とが絶縁膜を介
して配置されており、転送読み出し兼用電極の幅が信号
電荷を読み出す側からその反対側に向けて一定の割合で
減少している構成を有しており、信号読み出し特性を劣
化させることなく転送専用電極の占める面積を従来より
大きくすることで最大転送可能電荷量を従来よりも増大
することができる優れた固体撮像装置を実現できるもの
である。As described above, according to the present invention, the transfer-dedicated electrode and the transfer / read / read electrode are arranged on the charge transfer portion via the insulating film, and the width of the transfer / read / read electrode reads the signal charge. It has a configuration in which it decreases from one side to the other side at a fixed rate, and the maximum transferable charge amount can be increased by increasing the area occupied by the transfer-dedicated electrode without degrading the signal reading characteristics. It is possible to realize an excellent solid-state imaging device that can be increased in number as compared with the related art.
【図１】本発明の第１の実施例における固体撮像装置の
撮像面の模式図FIG. 1 is a schematic diagram of an image pickup surface of a solid-state image pickup device according to a first embodiment of the present invention.
【図２】本発明の第２の実施例における固体撮像装置の
撮像面の模式図FIG. 2 is a schematic diagram of an image pickup surface of a solid-state image pickup device according to a second embodiment of the present invention.
【図３】本発明の第３の実施例における固体撮像装置の
撮像面の模式図FIG. 3 is a schematic diagram of an image pickup surface of a solid-state image pickup device according to a third embodiment of the present invention.
【図４】（ａ）は本発明の実施例における固体撮像装置
の最大転送可能電荷量を模式的に示す図 （ｂ）は従来の固体撮像装置の最大転送可能電荷量を模
式的に示す図FIG. 4A is a diagram schematically showing the maximum transferable charge amount of the solid-state imaging device according to the embodiment of the present invention. FIG. 4B is a diagram schematically showing the maximum transferable charge amount of the conventional solid-state imaging device.
【図５】従来の固体撮像装置の撮像面の模式図FIG. 5 is a schematic diagram of an imaging surface of a conventional solid-state imaging device.
１ 光電変換部 ２ 電荷転送部 ３ 第１転送専用電極（転送専用電極） ４ 第１転送読み出し兼用電極（転送読み出し兼用電
極）DESCRIPTION OF SYMBOLS 1 Photoelectric conversion part 2 Charge transfer part 3 1st transfer-dedicated electrode (transfer-dedicated electrode) 4 1st transfer-reading combined electrode (transfer-reading combined electrode)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 国仙谷 昇 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 (72)発明者 斉藤 幸男 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 (72)発明者 永吉 良一 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Noboru Kokusenya 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (72) Yukio Saito 1006 Kadoma, Kadoma City, Osaka Matsushita Electronics Industrial Co., Ltd. (72) Inventor Ryoichi Nagayoshi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd.
Claims (3)
電型の領域で形成された光電変換部と、反対導電型の領
域で形成され前記光電変換部で発生した信号電荷を転送
する電荷転送部と、前記電荷転送部の上に信号電荷転送
用の転送専用電極および信号電荷転送と信号電荷読み出
しを兼ねる転送読み出し兼用電極とを有し、前記電荷転
送部の上で前記転送専用電極と前記転送読み出し兼用電
極とが絶縁膜を介して配置されており、前記転送読み出
し兼用電極の幅が信号電荷を読み出す側からその反対側
に向けて一定の割合で減少していることを特徴とする固
体撮像装置。1. A photoelectric conversion part formed in a region of opposite conductivity type on the surface of a semiconductor substrate of one conductivity type, and charges for transferring signal charges generated in the photoelectric conversion part formed in a region of opposite conductivity type. A transfer section, a transfer-dedicated electrode for signal charge transfer on the charge transfer section, and a transfer / read-out electrode for both signal charge transfer and signal charge read; and the transfer-dedicated electrode on the charge transfer section. The transfer / read / use electrode is disposed via an insulating film, and the width of the transfer / read / use electrode is reduced at a constant rate from the side from which the signal charge is read to the opposite side. Solid-state imaging device.
電型の領域で形成された光電変換部と、反対導電型の領
域で形成され前記光電変換部で発生した信号電荷を転送
する電荷転送部と、前記電荷転送部の上に信号電荷転送
用の転送専用電極および信号電荷転送と信号電荷読み出
しを兼ねる転送読み出し兼用電極とを有し、前記電荷転
送部の上で前記転送専用電極と前記転送読み出し兼用電
極とが絶縁膜を介して配置されており、前記転送読み出
し兼用電極の幅が信号電荷を読み出す側からその反対側
に向けて所定の位置までは一定でありそれから先は一定
の割合で減少していることを特徴とする固体撮像装置。2. A photoelectric conversion part formed in a region of opposite conductivity type on a surface of a semiconductor substrate of one conductivity type, and charges for transferring signal charges generated in the photoelectric conversion part formed in a region of opposite conductivity type. A transfer section, a transfer-dedicated electrode for signal charge transfer on the charge transfer section, and a transfer / read-out electrode for both signal charge transfer and signal charge read; and the transfer-dedicated electrode on the charge transfer section. The transfer / read-out electrode is disposed via an insulating film, and the width of the transfer / read-out electrode is constant from a side for reading out signal charges to a predetermined position from the side where the signal charges are read out to a predetermined position. A solid-state imaging device characterized by decreasing in proportion.
電型の領域で形成された光電変換部と、反対導電型の領
域で形成され前記光電変換部で発生した信号電荷を転送
する電荷転送部と、前記電荷転送部の上に信号電荷転送
用の転送専用電極および信号電荷転送と信号電荷読み出
しを兼ねる転送読み出し兼用電極とを有し、前記電荷転
送部の上で前記転送専用電極と前記転送読み出し兼用電
極とが絶縁膜を介して配置されており、前記転送読み出
し兼用電極の幅が信号電荷を読み出す側からその反対側
に向けて所定の位置までは一定でありそれから先は前記
の幅とは異なる一定の幅であることを特徴とする固体撮
像装置。3. A photoelectric conversion part formed in a region of opposite conductivity type on the surface of a semiconductor substrate of one conductivity type, and a charge formed in the region of opposite conductivity type for transferring signal charges generated in the photoelectric conversion part. A transfer section, a transfer-dedicated electrode for signal charge transfer on the charge transfer section, and a transfer / read-out electrode for both signal charge transfer and signal charge read; and the transfer-dedicated electrode on the charge transfer section. The transfer / read-out electrode is disposed via an insulating film, and the width of the transfer / read-out electrode is constant from a side for reading out signal charges to a predetermined position from the side opposite to the side where the signal charges are read out, and thereafter the above-mentioned A solid-state imaging device having a constant width different from the width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4130462A JPH05326914A (en) | 1992-05-22 | 1992-05-22 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4130462A JPH05326914A (en) | 1992-05-22 | 1992-05-22 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05326914A true JPH05326914A (en) | 1993-12-10 |
Family
ID=15034822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4130462A Pending JPH05326914A (en) | 1992-05-22 | 1992-05-22 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05326914A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212532A (en) * | 1988-02-18 | 1989-08-25 | Olympus Optical Co Ltd | Flexible tube for endoscope |
| EP0915519A1 (en) * | 1993-02-23 | 1999-05-12 | Sony Corporation | CCD type solid state imaging device |
-
1992
- 1992-05-22 JP JP4130462A patent/JPH05326914A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01212532A (en) * | 1988-02-18 | 1989-08-25 | Olympus Optical Co Ltd | Flexible tube for endoscope |
| EP0915519A1 (en) * | 1993-02-23 | 1999-05-12 | Sony Corporation | CCD type solid state imaging device |
| US6069374A (en) * | 1993-02-23 | 2000-05-30 | Sony Corporation | CCD type solid state imaging device |
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