JPH05290408A - Optical information recording medium - Google Patents

Optical information recording medium

Info

Publication number
JPH05290408A
JPH05290408A JP4116945A JP11694592A JPH05290408A JP H05290408 A JPH05290408 A JP H05290408A JP 4116945 A JP4116945 A JP 4116945A JP 11694592 A JP11694592 A JP 11694592A JP H05290408 A JPH05290408 A JP H05290408A
Authority
JP
Japan
Prior art keywords
protective layer
recording medium
resistant protective
heat
optical information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4116945A
Other languages
Japanese (ja)
Other versions
JP3034124B2 (en
Inventor
Masahiro Tsumura
昌弘 津村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Daicel Corp
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Sumitomo Chemical Co Ltd
Daicel Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd, Sumitomo Chemical Co Ltd, Daicel Chemical Industries Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP4116945A priority Critical patent/JP3034124B2/en
Publication of JPH05290408A publication Critical patent/JPH05290408A/en
Application granted granted Critical
Publication of JP3034124B2 publication Critical patent/JP3034124B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an optical information recording medium excellent in durabil ity as well as in recording characteristics. CONSTITUTION:A first heat resistant protective layer 2, a phase change type recording layer 3, a second heat resistant protective layer 4 and a protective layer 6 of an org. resin are successively laminated on a transparent resin substrate 1 to obtain an optical information recording medium and information is recorded, reproduced and erased by irradiating the recording layer 3 with laser light. In this recording medium, at least the first heat resistant protective layer 2 is formed with a mixture based on zinc sulfide and niobium oxide.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光情報記録媒体に関す
る。より詳細には、本発明は、レーザ光を照射すること
により発生する記録層の相変化により情報を記録する方
式の光情報記録媒体であって、特にその記録層に隣接し
て耐熱保護層を具備する光情報記録媒体の新規な構成に
関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording medium. More specifically, the present invention relates to an optical information recording medium of a type in which information is recorded by a phase change of a recording layer generated by irradiating a laser beam, and in particular, a heat-resistant protective layer is provided adjacent to the recording layer. The present invention relates to a novel configuration of an optical information recording medium provided.

【0002】[0002]

【従来の技術】近年、急速に処理量の増加した情報に対
してその保存技術の確立が緊急且つ不可避な課題となっ
ている。レーザ光を利用した各種の光記録媒体は、この
ような課題の解決に最も相応しいものとして注目されて
いる。即ち、光記録媒体は、一般に高密度な情報記録が
可能であり、更に、従来の磁気記録媒体と異なり記録情
報が電磁障害に強い等の優れた特徴を有している。光情
報記録媒体は、その記録方式により種々のものが開発さ
れているが、近年、記録層の相変化による反射率の変化
で情報を記録再生する相変化型と呼ばれる方式が注目さ
れている。
2. Description of the Related Art In recent years, it has become an urgent and unavoidable task to establish a storage technology for information whose processing amount has increased rapidly. Various optical recording media using laser light are drawing attention as the most suitable solution to such problems. That is, the optical recording medium is generally capable of high-density information recording, and, unlike the conventional magnetic recording medium, has an excellent feature that recorded information is strong against electromagnetic interference. Various types of optical information recording media have been developed depending on the recording system, but in recent years, a system called a phase change type, which records and reproduces information by a change in reflectance due to a phase change in a recording layer, has been attracting attention.

【0003】ところで、上述のような光情報記録媒体に
おいて、その記録層に隣接して、いわゆる耐熱保護層を
設けることが提案されている。その主な目的は以下のよ
うなものである。 書込みあるいは読み出し用のレーザ光による加熱に
より、プラスチック等により形成された基板が損傷を受
けることを防止する。 酸化等により記録層が腐食劣化することを防止す
る。 記録層の物理的な変形を防止する。 エンハンス効果によりC/N比を改善する。
By the way, it has been proposed to provide a so-called heat-resistant protective layer adjacent to the recording layer in the above optical information recording medium. Its main purpose is as follows. The substrate formed of plastic or the like is prevented from being damaged by the heating by the laser beam for writing or reading. Prevents the recording layer from being corroded and deteriorated by oxidation or the like. Prevent physical deformation of the recording layer. The C / N ratio is improved by the enhancing effect.

【0004】[0004]

【発明が解決しようとする問題点】上記耐熱保護層の材
料としてはエンハンス効果によりC/N比を向上させる
ために屈折率が基板材料よりも高く、高融点で熱膨張率
が小さいものが用いられ、特にZnSとSiO2 の混合物が
耐熱保護層の材料として好ましいとの報告がある。即
ち、光情報記録媒体に要求される特性としては、 記録消去再生特性が良好であること、 記録消去の繰り返しの信頼性が良好であること、 高温高湿度等の耐久性が良好であること 等が挙げられる。これに対して、記録膜としてTeGeSbを
用い、耐熱保護層としてZnSとSiO2 の混合物を用いた
光情報記録媒体は、上記の条件およびを何れもほぼ
満足している。
As the material for the heat-resistant protective layer, a material having a higher refractive index than that of the substrate material, a high melting point and a small thermal expansion coefficient is used in order to improve the C / N ratio by the enhancement effect. However, it is reported that a mixture of ZnS and SiO 2 is particularly preferable as a material for the heat-resistant protective layer. That is, the characteristics required for the optical information recording medium are that the recording / erasing / reproducing characteristics are good, the reliability of repeated recording / erasing is good, and the durability such as high temperature and high humidity is good. Is mentioned. On the other hand, the optical information recording medium using TeGeSb as the recording film and the mixture of ZnS and SiO 2 as the heat resistant protective layer substantially satisfies both the above conditions and.

【0005】しかしながら、上記の条件については依
然として問題が残っている。即ち、上記の材料により作
製された光情報記録媒体に対して温湿度サイクル試験や
高温高湿度試験を行うと、その降温時に透明樹脂基板と
耐熱保護層の間にブリスター(水膨れ)が発生するとい
う問題がある。
However, there are still problems with the above conditions. That is, when a temperature / humidity cycle test or a high temperature / high humidity test is performed on an optical information recording medium made of the above materials, blister (blister) occurs between the transparent resin substrate and the heat-resistant protective layer when the temperature is lowered. There is a problem.

【0006】そこで、本発明は、上記従来技術の問題点
を解決し、温湿度サイクル試験等での耐久性が良好な光
情報記録媒体を提供することをその目的としている。
Therefore, an object of the present invention is to solve the above-mentioned problems of the prior art and to provide an optical information recording medium having good durability in a temperature and humidity cycle test and the like.

【0007】[0007]

【問題を解決するための手段】即ち、本発明に従うと、
第1耐熱保護層、相変化型の記録層、第2耐熱保護層お
よび有機樹脂保護層を透明樹脂基板上に順次積層して構
成され、該記録層にレーザ光を照射することにより情報
の記録、再生および消去を行う光情報記録媒体におい
て、該第1耐熱保護層が、硫化亜鉛と酸化ニオブとを主
成分とする混合物により形成されていることを特徴とす
る光情報記録媒体が提供される。
That is, according to the present invention,
A first heat-resistant protective layer, a phase-change recording layer, a second heat-resistant protective layer, and an organic resin protective layer are sequentially laminated on a transparent resin substrate, and information is recorded by irradiating the recording layer with laser light. An optical information recording medium for reproducing and erasing is provided, wherein the first heat-resistant protective layer is formed of a mixture containing zinc sulfide and niobium oxide as main components. ..

【0008】[0008]

【作用】本発明に係る光情報記録媒体は、その記録層に
隣接して設けられる耐熱保護層が、硫化亜鉛と酸化ニオ
ブとを主成分とする混合物により形成されている点に主
要な特徴がある。
The optical information recording medium according to the present invention is characterized mainly in that the heat-resistant protective layer provided adjacent to the recording layer is formed of a mixture containing zinc sulfide and niobium oxide as main components. is there.

【0009】即ち、耐熱保護層の材料としてZnSとSiO
2 との混合物を使用した光情報記録媒体は、記録感度や
繰り返し記録特性の点では優れているが、温度/湿度サ
イクルに曝されるとブリスタが発生し、耐久性の点では
必ずしも優れていなかった。そこで、ブリスタ発生の原
因について詳細な検討を繰り返した結果、この種の材料
により形成された耐熱保護層は透明樹脂基板との間の接
着性が低く、このために急速な温度変化が生じたときに
ブリスタが発生することが判明した。
That is, ZnS and SiO are used as materials for the heat-resistant protective layer.
The optical information recording medium using the mixture of 2 and 3 is excellent in terms of recording sensitivity and repeated recording characteristics, but it is not necessarily superior in terms of durability because blisters occur when exposed to temperature / humidity cycles. It was Therefore, as a result of repeated detailed examination of the cause of blister generation, the heat-resistant protective layer formed of this type of material has low adhesiveness with the transparent resin substrate, which causes a rapid temperature change. It turned out that blister occurs.

【0010】そこで、透明樹脂基板の直上に装荷される
第1耐熱保護層の材料を広範に検討した結果、硫化亜鉛
と酸化ニオブとを主成分とする混合物が優れた特性を有
することを見出し本発明が完成された。
Therefore, as a result of extensive studies on the material of the first heat-resistant protective layer loaded directly on the transparent resin substrate, it was found that the mixture containing zinc sulfide and niobium oxide as the main components had excellent characteristics. The invention was completed.

【0011】尚、上記材料により形成された第1耐熱保
護層に対して、熱特性や膜の緻密さを調整する目的で、
10モル%以下のSiO2 を含有させることができる。ただ
し、SiO2 の含有量が10モル%を越えた場合は直下の透
明樹脂基板との接着性が劣化してブリスタの発生等を招
くので、SiO2 の含有量は10モル%以下の範囲に限定さ
れる。
For the purpose of adjusting the thermal characteristics and the denseness of the film with respect to the first heat-resistant protective layer formed of the above material,
It is possible to contain 10 mol% or less of SiO 2 . However, if the content of SiO 2 exceeds 10 mol%, the adhesiveness with the transparent resin substrate directly below deteriorates and blister formation occurs, so the content of SiO 2 should be within the range of 10 mol% or less. Limited.

【0012】以下、実施例を挙げて本発明をより具体的
に説明するが、以下の開示は本発明の一実施例に過ぎ
ず、本発明の技術的範囲を何ら限定するものではない。
Hereinafter, the present invention will be described in more detail with reference to examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention.

【0013】[0013]

【実施例】図1は本発明に係る光情報記録媒体の物理的
な構成を示す断面図である。
1 is a cross-sectional view showing the physical structure of an optical information recording medium according to the present invention.

【0014】同図に示すように、この光情報記録媒体
は、透明樹脂基板1上に順次積層された第1耐熱保護層
2、相変化型の記録層3、第2耐熱保護層4および有機
樹脂保護層6から構成されている。
As shown in FIG. 1, this optical information recording medium has a first heat-resistant protective layer 2, a phase change type recording layer 3, a second heat-resistant protective layer 4 and an organic layer, which are sequentially laminated on a transparent resin substrate 1. It is composed of a resin protective layer 6.

【0015】ここで、透明樹脂基板1は、一般にディス
ク状であるが、カード状やドラム状であってもよい。透
明樹脂基板1は、ポリカーボネイト樹脂、ポリメチルメ
タクリレート樹脂、エポキシ樹脂、アモルファスポリオ
レフィン樹脂等を好ましく用いることができる。
Here, the transparent resin substrate 1 is generally disk-shaped, but may be card-shaped or drum-shaped. For the transparent resin substrate 1, a polycarbonate resin, a polymethylmethacrylate resin, an epoxy resin, an amorphous polyolefin resin or the like can be preferably used.

【0016】また、相変化型の記録層3は、レーザ光を
照射することにより相変化して屈折率nや消衰係数kが
大きく変化し、更に、この相変化が可逆的で記録/消去
の繰り返しが可能な材料が用いられる。具体的には、Te
GeSb、TeSb、TeGeSn、TeSeSn等のTe系媒体や、InSbTe、
InSe、InSb、InSbSe等のIn系媒体を例示することができ
るが、これに限定されない。
Further, the phase-change recording layer 3 undergoes a phase change upon irradiation with a laser beam to greatly change the refractive index n and the extinction coefficient k. Further, this phase change is reversible and recording / erasing is possible. A material that can be repeated is used. Specifically, Te
Te-based media such as GeSb, TeSb, TeGeSn, TeSeSn, InSbTe,
In-based media such as InSe, InSb, and InSbSe can be exemplified, but the present invention is not limited thereto.

【0017】尚、耐熱保護層の屈折率は、CN比、記録
感度等の記録特性を良好に維持するために、 1.8〜2.2
の範囲内とすることが好ましい。
The refractive index of the heat-resistant protective layer is 1.8 to 2.2 in order to maintain good recording characteristics such as CN ratio and recording sensitivity.
It is preferable to set it within the range.

【0018】図2は本発明に係る光情報記録媒体の他の
物理的な構成を示す図である。尚、図2において、図1
と共通の構成要素には共通の参照番号を付している。
FIG. 2 is a diagram showing another physical structure of the optical information recording medium according to the present invention. In addition, in FIG.
The same reference numerals are attached to the components common to those.

【0019】同図に示すように、この光情報記録媒体
は、図1に示した光情報記録媒体の構成に対して、更
に、第2耐熱保護層4と有機樹脂保護層6との間に反射
層5を付加した構成となっている。
As shown in the figure, this optical information recording medium is different from the optical information recording medium shown in FIG. 1 in that it is further provided between the second heat resistant protective layer 4 and the organic resin protective layer 6. It has a configuration in which a reflective layer 5 is added.

【0020】ここで、反射層5の材料としては、Al、A
u、Ag、NiCr等を主成分とした高反射率金属を好ましく
例示することができる。
Here, as the material of the reflective layer 5, Al, A
Preferable examples are high-reflectance metals containing u, Ag, and NiCr as main components.

【0021】〔作製例1〕直径 130mmのポリカーボネイ
ト樹脂製スパイラル溝付ディスク基板を使用して図1に
示した構造の光情報記録媒体を作製した。
[Manufacturing Example 1] An optical information recording medium having the structure shown in FIG. 1 was manufactured using a disk substrate with a spiral groove made of polycarbonate resin having a diameter of 130 mm.

【0022】直径 150mmのZnSターゲット上に直径20m
m、厚さ5mmの Nb25 タブレット8個をのせた複合タ
ーゲットを用いてRFスパッタリング法により基板上に
第1耐熱保護層を形成した。
20 m diameter on a ZnS target with a diameter of 150 mm
A first heat-resistant protective layer was formed on the substrate by RF sputtering using a composite target on which eight Nb 2 O 5 tablets each having a thickness of 5 mm and a thickness of 5 mm were placed.

【0023】尚、成膜前の到達真空度は5×10-6torr以
下で、成膜は4mtorrのアルゴンガスの存在下で行い、
屈折率は 2.1で、膜厚は 120nmであった。
The ultimate vacuum before film formation is 5 × 10 -6 torr or less, and the film formation is performed in the presence of 4 mtorr of argon gas.
The refractive index was 2.1 and the film thickness was 120 nm.

【0024】また、EPMAの分析の結果、ZnS: Nb2
5 の存在比は70:30モル%であった。続いて、上述の
ようにして作製した耐熱保護層上に相変化記録層としTe
GeSb(組成比55:17:28原子%)を、4mtorrのアルゴ
ンガスの存在下でDCスパッタリング法により80nm成膜
した。
Further, as a result of EPMA analysis, ZnS: Nb 2
The abundance ratio of O 5 was 70:30 mol%. Then, a Te phase change recording layer was formed on the heat-resistant protective layer prepared as described above.
GeSb (composition ratio 55:17:28 atomic%) was formed in a thickness of 80 nm by DC sputtering in the presence of 4 mtorr of argon gas.

【0025】更に、前記した第1耐熱保護層の成膜と同
じ材料および方法で、上記相変化記録層上にも屈折率
2.1で、膜厚 120nmの第2耐熱保護層を成膜した後、最
後に、紫外線硬化性樹脂(大日本インキ製SD−17)を
スピンコート法により5μm塗布し、紫外線によりこれ
を硬化させて有機樹脂保護層を形成した。
Further, the same material and method as used for forming the first heat-resistant protective layer described above are used to form a refractive index on the phase-change recording layer.
In 2.1, after forming the second heat-resistant protective layer with a film thickness of 120 nm, finally, a UV curable resin (SD-17 made by Dainippon Ink & Co., Ltd.) was applied by 5 μm by a spin coating method and cured by ultraviolet rays. An organic resin protective layer was formed.

【0026】以上のようにして作製した光情報記録媒体
に対して、 1800rpmで回転する媒体の中心から45mmの位
置に、波長 830nmの半導体レーザを用いて8mWのパワ
ーで初期化した後、周波数 3.7MHz、duty22%の反復信
号を記録、再生および消去を行う操作を繰り返して実行
した。尚、情報の書込み時の記録パワーは14mW、消去
のパワーは8mW、再生パワー1mWとした。
The optical information recording medium produced as described above was initialized at a position 45 mm from the center of the medium rotating at 1800 rpm with a power of 8 mW using a semiconductor laser having a wavelength of 830 nm, and then a frequency of 3.7 The operation of recording, reproducing and erasing a repetitive signal of MHZ and duty 22% was repeated. The recording power when writing information was 14 mW, the erasing power was 8 mW, and the reproducing power was 1 mW.

【0027】このような操作を 105回繰り返した後の再
生信号のC/N比を測定した結果を初期値と共に表1に
示す。
Table 1 shows the results of measuring the C / N ratio of the reproduced signal after repeating such an operation 10 5 times together with the initial values.

【0028】更に、この光情報記録媒体に対して、JI
S C5024 M-1に規定された温湿度サイクル試験を行った
後、光情報記録媒体の表面を光学顕微鏡により観察し
た。観察は、試験を3サイクル行った後と6サイクル行
った後とにそれぞれ実施した。観察結果は、ブリスタの
発生の有無と発生したブリスタの大きさとにより評価し
た。評価結果を表2に示す。
Further, with respect to this optical information recording medium, JI
After performing the temperature / humidity cycle test specified by S C5024 M-1, the surface of the optical information recording medium was observed with an optical microscope. The observation was performed after the test was performed for 3 cycles and after the test was performed for 6 cycles, respectively. The observation results were evaluated based on the presence or absence of blister formation and the size of the blister formation. The evaluation results are shown in Table 2.

【0029】〔比較例1〕作製例1で使用したものと同
じ仕様のディスク基板を使用して、物理的には図1に示
した構造の光情報記録媒体を作製した。但し、第1耐熱
保護層2の材料は異るものを用いた。即ち、本比較例で
は、ZnSおよびSiO2 の混合物により第1耐熱保護層2
を形成した。
Comparative Example 1 An optical information recording medium physically having the structure shown in FIG. 1 was prepared using the disk substrate having the same specifications as those used in Preparation Example 1. However, different materials were used for the first heat-resistant protective layer 2. In other words, in this comparative example, a mixture with the first heat-resistant protective layer 2 of ZnS and SiO 2
Formed.

【0030】耐熱保護層の形成は、以下のようにして行
った。まず、直径 150mmのSiO2 ターゲット上に直径20
mm、厚さ5mmのZnSタブレット16個をのせた複合ターゲ
ットを用いてRFスパッタリング法により基板上に第1
耐熱保護層を形成した。尚、成膜前の到達真空度は5×
10-6torr以下であり、成膜処理は4mtorrのアルゴンガ
スの存在下で行った。こうして形成した第1耐熱保護層
の膜厚は 120nmであり、屈折率は 2.1であった。また、
EPMAによる分析の結果、第1耐熱保護層中のZnS:
SiO2 の存在比は75:25(モル%)であった。
The heat resistant protective layer was formed as follows. First, the diameter 20 on the SiO 2 target having a diameter of 150mm
1st on the substrate by RF sputtering method using a composite target with 16 mm and 5 mm thick ZnS tablets.
A heat resistant protective layer was formed. The ultimate vacuum before film formation is 5 ×
The pressure was 10 -6 torr or less, and the film formation treatment was performed in the presence of 4 mtorr of argon gas. The thickness of the first heat-resistant protective layer thus formed was 120 nm, and the refractive index was 2.1. Also,
As a result of EPMA analysis, ZnS in the first heat-resistant protective layer:
The abundance ratio of SiO 2 was 75:25 (mol%).

【0031】続いて、DCスパッタリング法により、作
製例1と同じ仕様の相変化記録層を形成した後、再び前
記した第1耐熱保護層の成膜と同じ材料および方法で、
上記相変化記録層上にも屈折率 2.1で、膜厚 120nmの第
2耐熱保護層を成膜した。最後に紫外線硬化性樹脂(大
日本インキ製SD−17)をスピンコート法により5μm
塗布し、紫外線によりこれを硬化させて有機樹脂保護層
を形成した。
Then, a phase change recording layer having the same specifications as those in Preparation Example 1 was formed by the DC sputtering method, and then the same material and method as those for forming the first heat-resistant protective layer were used again.
A second heat-resistant protective layer having a refractive index of 2.1 and a thickness of 120 nm was also formed on the phase-change recording layer. Finally, UV curable resin (SD-17 made by Dainippon Ink) was spin-coated to 5 μm.
It was applied and cured by ultraviolet rays to form an organic resin protective layer.

【0032】以上のようにして作製した光情報記録媒体
に対して、作製例1と同じ方法で特性および耐久性の評
価を行った。評価結果は、表1および表2に併せて示
す。
The optical information recording medium manufactured as described above was evaluated for characteristics and durability in the same manner as in Manufacturing Example 1. The evaluation results are also shown in Tables 1 and 2.

【0033】〔作製例2〕作製例1と同じ仕様のディス
ク基板を使用して、図2に示した構造の光情報記録媒体
を作製した。
[Manufacturing Example 2] An optical information recording medium having the structure shown in FIG. 2 was manufactured using a disk substrate having the same specifications as in Manufacturing Example 1.

【0034】直径 150mmのZnSターゲットに直径20mm、
厚さ5mmの Nb25 タブレット8個と直径30mm、厚さ5
mmのSiO2 タブレット3個をのせた複合ターゲットを用
いてRFスパッタリング法により基板上に第1耐熱保護
層2を形成した。尚、成膜前の到達真空度は5×10-6to
rr以下であり、成膜処理は4mtorrのアルゴンガスの存
在下で行った。こうして得られた第1耐熱保護層の膜厚
は 120nmであり、屈折率は 2.0であった。また、EPM
Aによる分析の結果、ZnS: Nb25 :SiO2の存在比
は60:30:10(モル%)であった。
A ZnS target with a diameter of 150 mm has a diameter of 20 mm,
Eight Nb 2 O 5 tablets with a thickness of 5 mm, a diameter of 30 mm and a thickness of 5
The first heat-resistant protective layer 2 was formed on the substrate by the RF sputtering method using a composite target on which three mm 2 SiO 2 tablets were placed. The ultimate vacuum before film formation is 5 × 10 -6 to
rr or less, and the film formation process was performed in the presence of 4 mtorr of argon gas. The thickness of the first heat-resistant protective layer thus obtained was 120 nm, and the refractive index was 2.0. Also, EPM
As a result of analysis by A, the abundance ratio of ZnS: Nb 2 O 5 : SiO 2 was 60:30:10 (mol%).

【0035】続いて、上述のようにして作製した耐熱保
護層上に、DCスパッタリング法により記録層3を成膜
した。記録層の材料はTeGeSb〔組成比55:17:28(原子
%)〕とし、4mtorrのアルゴンガスの存在下で膜厚25
nmまで堆積させた。
Subsequently, the recording layer 3 was formed by DC sputtering on the heat-resistant protective layer produced as described above. The material of the recording layer is TeGeSb [composition ratio 55:17:28 (atomic%)] and the film thickness is 25 in the presence of 4 mtorr of argon gas.
deposited to nm.

【0036】更に、前記した第1耐熱保護層の成膜と同
じ材料および方法で、膜厚20nm、屈折率 2.0の第2耐熱
保護層を成膜した。更に、4mtorrのアルゴンガスの存
在下で行うDCスパッタリング法により、膜厚50nmのAl
薄膜により形成された反射層を成膜した。最後に、紫外
線硬化性樹脂(大日本インキ製SD−17)をスピンコー
ト法により5μm塗布し、紫外線によりこれを硬化させ
て有機樹脂保護層を形成した。
Further, a second heat-resistant protective layer having a film thickness of 20 nm and a refractive index of 2.0 was formed by using the same material and method as those for forming the first heat-resistant protective layer. Furthermore, by a DC sputtering method performed in the presence of 4 mtorr of argon gas, an Al film having a thickness of 50 nm is formed.
A reflective layer formed of a thin film was formed. Finally, an ultraviolet curable resin (SD-17 manufactured by Dainippon Ink) was applied by spin coating to a thickness of 5 μm and cured by ultraviolet rays to form an organic resin protective layer.

【0037】こうして作製した光情報記録媒体に対し
て、作製例1と同じ方法で特性および耐久性の評価を行
なった。評価結果は、表1および表2に併せて示す。
The optical information recording medium thus manufactured was evaluated for characteristics and durability in the same manner as in Manufacturing Example 1. The evaluation results are also shown in Tables 1 and 2.

【0038】〔比較例2〕作製例2と同じ仕様のディス
ク基板を使用して、物理的には図2に示した構造の光情
報記録媒体を作製した。ただし、ここでは、耐熱保護層
の材料を、ZnS、Nb25 およびSiO2 の混合物とし
た。
[Comparative Example 2] An optical information recording medium physically having the structure shown in FIG. 2 was produced by using a disk substrate having the same specifications as in Production Example 2. However, here, the material of the heat-resistant protective layer was a mixture of ZnS, Nb 2 O 5 and SiO 2 .

【0039】耐熱保護層の成膜は以下のようにして行っ
た。まず、直径 150mmのZnSターゲットに直径20mm、厚
さ5mmの Nb25 タブレット6個と直径30mm、厚さ5mm
のSiO2 タブレット5枚をのせた複合ターゲットを用
い、RFスパッタリング法により基板上に堆積させた。
尚、成膜前の到達真空度は5×10-6torr以下であり、成
膜処理は4mtorrのアルゴンガスの存在下で行った。こ
うして得られた耐熱保護層の膜厚は 120nmであり、屈折
率は 2.0であった。また、EPMAによる分析の結果、
ZnS: Nb25 :SiO2 の存在比は60:25:15(モル
%)であった。
The heat resistant protective layer was formed as follows. First, a ZnS target with a diameter of 150 mm has 6 Nb 2 O 5 tablets with a diameter of 20 mm and a thickness of 5 mm and a diameter of 30 mm and a thickness of 5 mm.
Was deposited on the substrate by the RF sputtering method using a composite target on which 5 sheets of SiO 2 tablets of No.
The ultimate vacuum before film formation was 5 × 10 −6 torr or less, and the film formation process was performed in the presence of 4 mtorr of argon gas. The heat-resistant protective layer thus obtained had a film thickness of 120 nm and a refractive index of 2.0. Also, as a result of the EPMA analysis,
The abundance ratio of ZnS: Nb 2 O 5 : SiO 2 was 60:25:15 (mol%).

【0040】続いて、上述のようにして作製した耐熱保
護層上に作製例2と同じ仕様の記録層を形成した後、上
記第1耐熱保護層の成膜と同じ材料および方法で、第2
耐熱保護層を成膜した。第2耐熱保護層の膜厚は25nmで
あり、屈折率は 2.0であった。
Then, after forming a recording layer having the same specifications as in Preparation Example 2 on the heat-resistant protective layer manufactured as described above, a second layer is formed by using the same material and method as those for forming the first heat-resistant protective layer.
A heat resistant protective layer was formed. The thickness of the second heat-resistant protective layer was 25 nm, and the refractive index was 2.0.

【0041】更に、4mtorrのアルゴンガスの存在下で
行うDCスパッタリング法により膜厚50nmのAl薄膜によ
る反射層を成膜した。最後に、紫外線硬化性樹脂(大日
本インキ製SD−17)をスピンコート法により5μm塗
布し、紫外線によりこれを硬化させて有機樹脂保護層を
形成した。
Further, a reflective layer made of an Al thin film having a film thickness of 50 nm was formed by the DC sputtering method performed in the presence of 4 mtorr of argon gas. Finally, an ultraviolet curable resin (SD-17 manufactured by Dainippon Ink) was applied by spin coating to a thickness of 5 μm and cured by ultraviolet rays to form an organic resin protective layer.

【0042】以上のようにして作製した光情報記録媒体
に対して、作製例1と同じ方法で特性および耐久性の評
価を行なった。評価結果は表1および表2に併せて示
す。
The optical information recording medium manufactured as described above was evaluated for characteristics and durability in the same manner as in Manufacturing Example 1. The evaluation results are also shown in Tables 1 and 2.

【0043】[0043]

【表1】 [Table 1]

【0044】[0044]

【表2】 [Table 2]

【0045】[0045]

【発明の効果】以上説明したように、本発明に従う光情
報記録媒体は、その記録特性に優れていると同時に、耐
久性も優れている。
As described above, the optical information recording medium according to the present invention is excellent not only in its recording characteristics but also in its durability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明が適用可能な光情報記録媒体の典型的な
構造を示す断面図である。
FIG. 1 is a sectional view showing a typical structure of an optical information recording medium to which the present invention is applicable.

【図2】本発明が適用可能な光情報記録媒体の他の構造
を示す断面図である。
FIG. 2 is a cross-sectional view showing another structure of the optical information recording medium to which the present invention can be applied.

【符号の説明】[Explanation of symbols]

1 透明樹脂、 2 第1耐熱保護層、 3 相変化記録層、 4 第2耐熱保護層、 5 反射層、 6 有機樹脂保護層 1 transparent resin, 2 1st heat resistant protective layer, 3 phase change recording layer, 4 2nd heat resistant protective layer, 5 reflective layer, 6 organic resin protective layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】第1耐熱保護層、相変化型の記録層、第2
耐熱保護層および有機樹脂保護層を透明樹脂基板上に順
次積層して構成され、該記録層にレーザ光を照射するこ
とにより情報の記録、再生および消去を行う光情報記録
媒体において、 少なくとも該第1耐熱保護層が、硫化亜鉛と酸化ニオブ
とを主成分とする混合物により形成されていることを特
徴とする光情報記録媒体。
1. A first heat-resistant protective layer, a phase-change type recording layer, and a second layer.
An optical information recording medium, which comprises a heat-resistant protective layer and an organic resin protective layer sequentially laminated on a transparent resin substrate, and which records, reproduces, and erases information by irradiating the recording layer with laser light. 1. An optical information recording medium, wherein the heat-resistant protective layer is formed of a mixture containing zinc sulfide and niobium oxide as main components.
【請求項2】請求項1に記載された光情報記録媒体にお
いて、前記第1耐熱保護層が、10モル%以下のSiO2
含むことを特徴とする光情報記録媒体。
2. The optical information recording medium according to claim 1, wherein the first heat-resistant protective layer contains 10 mol% or less of SiO 2 .
【請求項3】請求項1または請求項2に記載された光情
報記録媒体において、前記第2耐熱保護層と前記有機樹
脂保護層との間に形成された反射層を更に備えることを
特徴とする光情報記録媒体。
3. The optical information recording medium according to claim 1 or 2, further comprising a reflective layer formed between the second heat-resistant protective layer and the organic resin protective layer. Optical recording medium.
JP4116945A 1992-04-09 1992-04-09 Optical information recording medium Expired - Lifetime JP3034124B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4116945A JP3034124B2 (en) 1992-04-09 1992-04-09 Optical information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4116945A JP3034124B2 (en) 1992-04-09 1992-04-09 Optical information recording medium

Publications (2)

Publication Number Publication Date
JPH05290408A true JPH05290408A (en) 1993-11-05
JP3034124B2 JP3034124B2 (en) 2000-04-17

Family

ID=14699618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4116945A Expired - Lifetime JP3034124B2 (en) 1992-04-09 1992-04-09 Optical information recording medium

Country Status (1)

Country Link
JP (1) JP3034124B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1112988A1 (en) * 1999-12-28 2001-07-04 Furuya Metal Co., Ltd. ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film
US6268034B1 (en) 1998-08-05 2001-07-31 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
US6388984B2 (en) 1997-08-28 2002-05-14 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and its recording and reproducing method
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821707B2 (en) 1996-03-11 2004-11-23 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
US7037413B1 (en) 1996-03-11 2006-05-02 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information
US6388984B2 (en) 1997-08-28 2002-05-14 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and its recording and reproducing method
US6343062B1 (en) 1997-09-26 2002-01-29 Matsushita Electric Industrial Co., Ltd Optical disk device and optical disk for recording and reproducing high-density signals
US6268034B1 (en) 1998-08-05 2001-07-31 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for producing the same, method for recording and reproducing information thereon and recording/reproducing apparatus
EP1112988A1 (en) * 1999-12-28 2001-07-04 Furuya Metal Co., Ltd. ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film
US6656260B2 (en) 1999-12-28 2003-12-02 Kyocera Corporation ZnS-series sintered material and method for producing the same, target using the ZnS-series sintered material, thin film, and optical recording medium using the thin film

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