JPH05283734A - Photocoupling device - Google Patents
Photocoupling deviceInfo
- Publication number
- JPH05283734A JPH05283734A JP8193292A JP8193292A JPH05283734A JP H05283734 A JPH05283734 A JP H05283734A JP 8193292 A JP8193292 A JP 8193292A JP 8193292 A JP8193292 A JP 8193292A JP H05283734 A JPH05283734 A JP H05283734A
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- light
- recess
- light emitting
- wiring electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
- H01L2924/15155—Shape the die mounting substrate comprising a recess for hosting the device the shape of the recess being other than a cuboid
- H01L2924/15156—Side view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電気信号を一旦光信号
に変換した後再び電気信号に変換する光結合装置に関
し、特に耐熱性基板上に、金属メツキ等で薄膜配線を施
したフレームレス構造を有する表面実装型の光結合装置
に係る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical coupling device for converting an electric signal into an optical signal and then converting the signal into an electric signal again, and particularly to a frameless structure in which a thin film wiring is formed on a heat resistant substrate by metal plating or the like. The present invention relates to a surface mount type optical coupling device having a structure.
【０００２】[0002]
【従来の技術】図１５、図１６に、従来の技術に基づく
光結合装置（フオトカプラ）の構成を示す。図１５は従
来の光結合装置の斜視図、図１６は同じくその断面図で
ある。15 and 16 show the structure of an optical coupling device (photocoupler) based on the conventional technique. FIG. 15 is a perspective view of a conventional optical coupling device, and FIG. 16 is a sectional view thereof.
【０００３】図示の如く、従来の光結合装置は、鉄系も
しくは銅系の金属リードフレーム１，２の先端に、ＬＥ
Ｄチツプ等の発光素子３と、フオトダイオードチツプや
フオトトランジスタチツプ等の受光素子４とを夫々銀ペ
ースト等によりダイボンドし、金ワイヤ等でワイヤボン
ドを施し、その後、これらを対向して配置する。そし
て、チツプ３，４の保護および光外部量子効率の向上の
ため、エポキシ樹脂や熱可塑性樹脂等からなる透光性樹
脂５により一次モールドを施した後、金属リードフレー
ム１，２の保護と外乱光の遮蔽のために遮光性樹脂６で
二次モールドしている。As shown in the figure, in the conventional optical coupling device, the LE or LE type metal lead frames 1 and 2 are mounted on the LE tips.
The light emitting element 3 such as a D chip and the light receiving element 4 such as a photodiode chip or a phototransistor chip are die-bonded with silver paste or the like, wire-bonded with a gold wire or the like, and then they are arranged to face each other. Then, in order to protect the chips 3 and 4 and to improve the external quantum efficiency of light, the metal lead frames 1 and 2 are protected and disturbed after primary molding is performed with a light-transmissive resin 5 made of an epoxy resin or a thermoplastic resin. Secondary molding is performed with a light-blocking resin 6 to block light.
【０００４】[0004]
【発明が解決しようとする課題】図１５，１６に示した
光結合装置の構成では、受発光チツプ３，４が金属リー
ドフレーム１，２に搭載されている。これら金属リード
フレーム１，２は、外部に露出した構造になつているた
め、外部の力により曲げおよび変形が起こりやすく、プ
リント基板上への実装時に問題が生じることがある。In the structure of the optical coupling device shown in FIGS. 15 and 16, the light emitting / receiving chips 3 and 4 are mounted on the metal lead frames 1 and 2. Since these metal lead frames 1 and 2 have a structure exposed to the outside, they are likely to be bent and deformed by an external force, which may cause a problem when they are mounted on a printed board.
【０００５】また、金属リードフレーム１，２と透光性
樹脂５および遮光性樹脂６との間の熱膨張係数の差によ
る応力により、金属リードフレーム１，２とモールド樹
脂５，６との間の剥離およびモールド樹脂５，６のクラ
ツクが発生する。それら剥離およびクラツクにより、そ
の隙間から水分が進入することで、チツプ３，４に電気
的シヨート不良が発生し、また、金属リードフレーム２
のメツキ配線およびワイヤーの断線によるオープン不良
の発生が問題となつている。Further, due to the stress due to the difference in the coefficient of thermal expansion between the metal lead frames 1 and 2 and the light-transmitting resin 5 and the light-shielding resin 6, the metal lead frames 1 and 2 and the molding resins 5 and 6 are separated from each other. And the cracks of the mold resins 5 and 6 occur. Due to the peeling and cracking, moisture enters through the gap, which causes an electrical short defect in the chips 3 and 4, and also the metal lead frame 2
The problem is the occurrence of open failure due to the defective wiring and wire breakage.
【０００６】本発明は、上記課題に鑑み、耐熱性基板上
に金属メツキ等で配線を施したフレームレス構造にする
ことにより、金属リードフレームとモールド樹脂間との
熱膨張係数の差を考慮する必要がなく、金属リードフレ
ームとモールド樹脂間の剥離やモールド樹脂のクラツク
によるオープンおよびシヨート不良の発生を軽減し得る
光結合装置の提供を目的とする。In view of the above-mentioned problems, the present invention considers the difference in the coefficient of thermal expansion between the metal lead frame and the mold resin by providing a frameless structure in which wiring is provided on the heat resistant substrate by metal plating or the like. It is an object of the present invention to provide an optical coupling device which can reduce the occurrence of peeling between the metal lead frame and the mold resin, the opening due to cracking of the mold resin, and the short defect without the necessity.
【０００７】[0007]
【課題を解決するための手段】本発明請求項１による課
題解決手段は、図１〜１４の如く、発光素子１４と受光
素子１５とが光学的に結合するよう配置され、これらが
モールド樹脂２８にて樹脂封止されてなる光結合装置に
おいて、第一絶縁基板１１ａに第一凹部１２が形成さ
れ、該第一凹部１２の底面に第二凹部１３が形成され、
該第一凹部１２および第二凹部１３に、薄膜状の配線電
極部１６ａ，１７ａが立体的に形成され、該第二凹部１
３の電極部１７ａに、前記発光素子１４および受光素子
１５のうち一方の素子１４が搭載され、前記第一凹部１
２に取付け可能な大きさの第二絶縁基板１１ｂが設けら
れ、該第二絶縁基板１１ｂに薄膜状の配線電極部１８が
形成され、該第二絶縁基板１１ｂの配線電極部１８に、
前記発光素子１４および受光素子１５のうち他方の素子
１５が搭載され、該他方の素子１５が搭載された第二絶
縁基板１１ｂは、前記第一絶縁基板１１ａの第一凹部１
２の底部に取付けられて、前記発光素子１４および受光
素子１５が対向配置されたものである。1 to 14, a light emitting element 14 and a light receiving element 15 are arranged so as to be optically coupled to each other, and these are molded resin 28. In the optical coupling device that is resin-sealed with, the first recess 12 is formed in the first insulating substrate 11a, and the second recess 13 is formed in the bottom surface of the first recess 12.
Thin film-shaped wiring electrode portions 16a and 17a are three-dimensionally formed in the first recess 12 and the second recess 13, and the second recess 1
One of the light emitting element 14 and the light receiving element 15 is mounted on the electrode portion 17a of No. 3, and the first recess 1
2 is provided with a second insulating substrate 11b having a size that can be attached to the second insulating substrate 11b, a thin film wiring electrode portion 18 is formed on the second insulating substrate 11b, and the wiring electrode portion 18 of the second insulating substrate 11b is
The other element 15 of the light emitting element 14 and the light receiving element 15 is mounted, and the second insulating substrate 11b on which the other element 15 is mounted is the first recess 1 of the first insulating substrate 11a.
The light-emitting element 14 and the light-receiving element 15 are attached to the bottom of No. 2 and face each other.
【０００８】本発明請求項２による課題解決手段は、図
１の如く、請求項１記載の第二絶縁基板１１ｂの第二立
体配線電極部１８に、請求項１記載の他方の素子１５が
その光授受面を第二絶縁基板１１ｂに対面するよう搭載
され、第二凹部１３内の一方の素子１４と、第二絶縁基
板１１ｂ上の他方の素子１５は、前記第二絶縁基板１１
ｂを挟んで対向配置され、前記第二絶縁基板１１ｂは、
発光素子１４からの光を受光素子１５に透過するよう透
光性とされたものである。According to the second aspect of the present invention, as shown in FIG. 1, the second three-dimensional wiring electrode portion 18 of the second insulating substrate 11b according to the first aspect is provided with the other element 15 according to the first aspect. The element 14 in the second recess 13 and the other element 15 on the second insulating substrate 11b are mounted so that the light transmitting / receiving surface faces the second insulating substrate 11b.
The second insulating substrate 11b is arranged so as to face each other with b in between.
It is made transparent so that the light from the light emitting element 14 is transmitted to the light receiving element 15.
【０００９】本発明請求項３による課題解決手段は、図
１３の如く、請求項１記載の第二絶縁基板１１ｂの第二
立体配線電極部１８に、請求項１記載の他方の素子１５
がその光授受面を第二絶縁基板１１ｂの逆側に向けて搭
載され、第二絶縁基板１１ｂは他方の素子１５を第二凹
部１３側に向けて一方の素子１４に対向させるよう取付
けられ、前記第二絶縁基板１１ｂは、外乱光を遮断する
よう遮光性とされたものである。The problem solving means according to claim 3 of the present invention is, as shown in FIG. 13, in the second three-dimensional wiring electrode portion 18 of the second insulating substrate 11b according to claim 1, the other element 15 according to claim 1.
Is mounted with its light transmitting / receiving surface facing the opposite side of the second insulating substrate 11b, and the second insulating substrate 11b is attached so that the other element 15 faces the second recess 13 and faces one element 14. The second insulating substrate 11b has a light blocking property so as to block ambient light.
【００１０】本発明請求項４による課題解決手段は、請
求項１、請求項２または請求項３記載の光結合装置にお
いて、第一絶縁基板１１ａの第一立体配線電極部１６ａ
と、第二絶縁基板１１ｂの第二立体配線電極部１８との
間に、これらを電気的に接続する半田バンプ２７が介在
されたものである。According to a fourth aspect of the present invention, the problem solving means is the optical coupling device according to the first, second or third aspect, wherein the first three-dimensional wiring electrode portion 16a of the first insulating substrate 11a is used.
And the second three-dimensional wiring electrode portion 18 of the second insulating substrate 11b, the solder bumps 27 electrically connecting them are interposed.
【００１１】[0011]
【作用】上記請求項１〜３による課題解決手段におい
て、まず、第一絶縁基板１１ａおよび第二絶縁基板１１
ｂを、複数デバイス分が連結した大型基板の状態に夫々
形成する。この際、第一絶縁基板１１ａに二段の凹部１
２，１３を設け、これに薄膜状の立体配線電極部１６
ａ，１７ａを形成する。そして、第二凹部１３内に発光
素子１４および受光素子１５のうちのいずれか一方を搭
載する。In the means for solving the problems according to claims 1 to 3, first, the first insulating substrate 11a and the second insulating substrate 11 are
b is formed in a state of a large substrate in which a plurality of devices are connected. At this time, the two-step concave portion 1 is formed on the first insulating substrate 11a.
2 and 13 are provided, and a thin film-shaped three-dimensional wiring electrode portion 16 is provided on this
a and 17a are formed. Then, one of the light emitting element 14 and the light receiving element 15 is mounted in the second recess 13.
【００１２】次に、第二絶縁基板１１ｂに他方を搭載
し、これにワイヤボンデイング等を施した後、各デバイ
スに分割し、これを第一絶縁基板１１ａの第一凹部１２
の底部に取付け、発光素子１４と受光素子１５を第二絶
縁基板１１ｂを挟んで対向させる。Next, the other is mounted on the second insulating substrate 11b, and after wire bonding or the like is applied to this, it is divided into each device, and this is divided into the first recess 12 of the first insulating substrate 11a.
And the light emitting element 14 and the light receiving element 15 are opposed to each other with the second insulating substrate 11b interposed therebetween.
【００１３】その後、凹部１２，１３内に透光性樹脂２
８および遮光性樹脂２９を順次充填して、リードフレー
ムレス構造の光結合装置を製造する。そうすると、金属
リードピンを省略でき、従来問題であつたリードピンの
曲がりや変形を考慮する必要がなくなる。Then, the translucent resin 2 is placed in the recesses 12 and 13.
8 and the light shielding resin 29 are sequentially filled to manufacture an optical coupling device having a lead frameless structure. Then, the metal lead pin can be omitted, and there is no need to consider bending or deformation of the lead pin, which has been a problem in the past.
【００１４】また、各絶縁基板１１ａ，１１ｂと透光性
樹脂２８との熱膨張係数の差は一般に小さく、これらの
間の剥離やクラツクが発生しにくくなる。Further, the difference in the coefficient of thermal expansion between the insulating substrates 11a and 11b and the translucent resin 28 is generally small, and peeling or cracking between them is less likely to occur.
【００１５】請求項４では、第二絶縁基板１１ｂを第一
凹部１２に取付ける際、半田バンプ２７を介して両立体
配線電極部１６ａ，１８を接続できるため、各素子の搭
載が容易となり、その位置精度が高まる。According to the present invention, when the second insulating substrate 11b is attached to the first recess 12, the compatible wiring electrode portions 16a and 18 can be connected to each other via the solder bumps 27, which facilitates mounting of each element. Position accuracy is improved.
【００１６】[0016]
【実施例】（第一実施例）図１は本発明の第一実施例に
係わる光結合装置（フオトカプラ）の断面図、図２は第
二絶縁基板に素子を搭載した状態の斜視図、図３は一枚
の大型基板を用いて第一絶縁基板を成型した状態を示す
斜視図、図４は図３の一デバイス分を示す拡大斜視図、
図５は一枚の大型第一絶縁基板に立体配線電極部を形成
した状態の斜視図、図６は図５の一デバイス分を示す拡
大斜視図、図７は一枚の大型第一絶縁基板の第二凹部に
素子を搭載した状態の斜視図、図８は図７の一デバイス
分を示す斜視図、図９は一枚の大型第一絶縁基板の第一
凹部に第二絶縁基板を挿着した状態の斜視図、図１０は
ダイシング切断動作を示す斜視図、図１１は図１０の一
デバイス分を示す斜視図、図１２は第一絶縁基板の底面
視斜視図である。なお、図１０，１１では、便宜上凹部
内の樹脂を省略している。(First Embodiment) FIG. 1 is a sectional view of an optical coupling device (photocoupler) according to the first embodiment of the present invention, and FIG. 2 is a perspective view showing a state in which elements are mounted on a second insulating substrate. 3 is a perspective view showing a state in which the first insulating substrate is molded using one large substrate, FIG. 4 is an enlarged perspective view showing one device of FIG. 3,
FIG. 5 is a perspective view showing a state in which a three-dimensional wiring electrode portion is formed on one large first insulating substrate, FIG. 6 is an enlarged perspective view showing one device of FIG. 5, and FIG. 7 is one large first insulating substrate. 8 is a perspective view showing a state in which an element is mounted in the second concave portion, FIG. 8 is a perspective view showing one device of FIG. 7, and FIG. FIG. 10 is a perspective view of the attached state, FIG. 10 is a perspective view showing a dicing cutting operation, FIG. 11 is a perspective view showing one device of FIG. 10, and FIG. 12 is a bottom view perspective view of the first insulating substrate. 10 and 11, the resin in the recess is omitted for convenience.
【００１７】図１の如く、本実施例の光結合装置は、発
光素子１４と受光素子１５とが光学的に結合するよう配
置され、これらが透光性樹脂２８および遮光性樹脂２９
にて樹脂封止されてなるもので、前記発光素子１４およ
び受光素子１５のうち一方の素子１４が搭載される第一
絶縁基板１１ａと、他方の素子１５が搭載される第二絶
縁基板１１ｂとが設けられている。As shown in FIG. 1, in the optical coupling device of this embodiment, the light emitting element 14 and the light receiving element 15 are arranged so as to be optically coupled to each other, and these are translucent resin 28 and light shielding resin 29.
A first insulating substrate 11a on which one of the light emitting element 14 and the light receiving element 15 is mounted, and a second insulating substrate 11b on which the other element 15 is mounted. Is provided.
【００１８】前記第一絶縁基板１１ａは、図３の如く、
液晶ポリマー等の耐熱性樹脂を用いて射出成型等で一枚
の大型基板状に多数デバイス分形成され、後にダイシン
グソーで切断して、図４のような略直方体状とされる。The first insulating substrate 11a, as shown in FIG.
A heat-resistant resin such as a liquid crystal polymer is used to form a large number of devices on a single large substrate by injection molding or the like, which is then cut with a dicing saw into a substantially rectangular parallelepiped shape as shown in FIG.
【００１９】該第一絶縁基板１１ａの各デバイスの上面
中央部には、図４の如く、長寸矩形の第一凹部１２が形
成されている。該第一凹部１２の底面の中央部には、短
寸矩形の第二凹部１３が形成されている。At the center of the upper surface of each device of the first insulating substrate 11a, as shown in FIG. 4, a long rectangular first recess 12 is formed. A short rectangular second recess 13 is formed in the center of the bottom surface of the first recess 12.
【００２０】該第一凹部１２および第二凹部１３の表面
には、図５，６の如く、選択的に立体メツキを施して、
発光素子１４を搭載あるいはワイヤー結線するための電
極部１６ａ，１７ａが形成され、第一絶縁基板１１ａの
天面部には、コンタクト用電極部１６ｂ，１７ｂが形成
され、第一絶縁基板１１ａの裏面には、図１２の如く、
裏面電極部１６ｃ，１７ｃが形成される。該受発光素子
搭載用の電極部１６ａ，１７ａと下部電極用メツキ部１
６ｃ，１７ｃは、前記スルーホール２３を介して接続さ
れ立体配線がなされている。これら電極部１６ａ〜１６
ｃ，１７ａ〜１７ｃのメツキ処理は、前述の一枚の大型
基板の段階で複数デバイス分同時に施され、メツキ処理
工程の合理化およびバツチ処理化を図つている。なお、
図１中、３１はボンデイングワイヤである。Surfaces of the first recess 12 and the second recess 13 are selectively three-dimensionally plated as shown in FIGS.
Electrode portions 16a and 17a for mounting the light emitting element 14 or wire connection are formed, contact electrode portions 16b and 17b are formed on the top surface portion of the first insulating substrate 11a, and the back surface of the first insulating substrate 11a is formed. Is as shown in FIG.
The back surface electrode portions 16c and 17c are formed. Electrode parts 16a, 17a for mounting the light emitting / receiving element and a plating part 1 for the lower electrode
The 6c and 17c are connected through the through hole 23 to form a three-dimensional wiring. These electrode parts 16a to 16
The plating treatments of c and 17a to 17c are simultaneously performed for a plurality of devices at the stage of the above-mentioned one large substrate, so that the plating treatment process can be rationalized and the batch processing can be performed. In addition,
In FIG. 1, 31 is a bonding wire.
【００２１】前記第二絶縁基板１１ｂは、図１，２の如
く、耐熱絶縁樹脂を用いて、複数デバイス分が連結した
大型基板状に成形され、素子搭載後、デバイスごとに分
割されて、前記第一絶縁基板１１ａの第一凹部１２より
少し幅狭の平板状とされる。ここで、該耐熱絶縁樹脂と
しては、上下両側に前記両素子１４，１５を配置した際
に受発光間で光を透過するよう、透光性のものが使用さ
れる。該第二絶縁基板１１ｂの上面から側面および底面
にかけて、選択的に立体メツキが施され、受光素子１５
を搭載あるいはワイヤー結線するための薄膜状の第二立
体配線電極部１８が形成されている。該第二立体配線電
極部１８は、図２の如く、受発光間の光の授受を妨げな
いよう、受光素子１５の受光面を回避するようパターン
設計されている。As shown in FIGS. 1 and 2, the second insulating substrate 11b is molded into a large-sized substrate in which a plurality of devices are connected by using a heat-resistant insulating resin, and after mounting the elements, it is divided into each device. The first insulating substrate 11a has a flat plate shape slightly narrower than the first concave portion 12. Here, as the heat-resistant insulating resin, a translucent resin is used so that light is transmitted between light receiving and emitting when the both elements 14 and 15 are arranged on the upper and lower sides. From the top surface to the side surface and the bottom surface of the second insulating substrate 11b, three-dimensional plating is selectively applied, and the light receiving element 15
A thin-film second three-dimensional wiring electrode portion 18 for mounting or wire-connecting is formed. As shown in FIG. 2, the second three-dimensional wiring electrode portion 18 is designed in a pattern so as to avoid the light receiving surface of the light receiving element 15 so as not to interfere with the light transmission / reception.
【００２２】前記発光素子１４は、図７，８の如く、前
記第一絶縁基板１１ａの第二凹部１３の電極部１７ａ上
に、導電性ペースト（例えば、銀ペースト）によりダイ
ボンドされ、発光面を上向きにして搭載される。As shown in FIGS. 7 and 8, the light emitting element 14 is die-bonded onto the electrode portion 17a of the second recess 13 of the first insulating substrate 11a with a conductive paste (for example, silver paste) to form a light emitting surface. It is mounted facing up.
【００２３】また、前記受光素子１５は、図２の如く、
前記第二絶縁基板１１ｂの電極部１８上に、半田バンプ
（図示せず）を介して電気的に接続される。ここで、一
般に受光素子１５の接続電極は受光面に形成されるた
め、該受光面と第二絶縁基板１１ｂとは互いに対面する
ことになる。Further, the light receiving element 15 is, as shown in FIG.
It is electrically connected to the electrode portion 18 of the second insulating substrate 11b via a solder bump (not shown). Here, since the connection electrode of the light receiving element 15 is generally formed on the light receiving surface, the light receiving surface and the second insulating substrate 11b face each other.
【００２４】そして、該受光素子１５が搭載された第二
絶縁基板１１ｂは、図９〜１１の如く、前記第一絶縁基
板１１ａの第二凹部１３を跨いで第一凹部１２の底部に
取付けられる。これにより、発光素子１４および受光素
子１５は、前記第二絶縁基板１１ｂを挟んで対向配置さ
れる。この際、受光素子１５が第二絶縁基板１１ｂの上
面に露出しているので、受光素子１５を視認しながら発
光素子１４に対する位置決めを行える。したがつて、光
学的位置決め作業が容易になる。Then, the second insulating substrate 11b on which the light receiving element 15 is mounted is attached to the bottom of the first concave portion 12 across the second concave portion 13 of the first insulating substrate 11a as shown in FIGS. .. As a result, the light emitting element 14 and the light receiving element 15 are opposed to each other with the second insulating substrate 11b interposed therebetween. At this time, since the light receiving element 15 is exposed on the upper surface of the second insulating substrate 11b, the light receiving element 15 can be positioned with respect to the light emitting element 14 while visually recognizing it. Therefore, the optical positioning work becomes easy.
【００２５】ここで、両基板１１ａ，１１ｂの電極部１
６ａ，１８同士は、図１の如く、半田バンプ２７を介し
て導電性ペーストにより電極部１６ａ，１６ｂに仮接続
され、後にリフロー工程を通して半田バンプ２７を溶融
して本接続される。Here, the electrode portion 1 of both substrates 11a and 11b
As shown in FIG. 1, the 6a and 18a are temporarily connected to the electrode portions 16a and 16b by the conductive paste through the solder bumps 27, and the solder bumps 27 are melted and permanently connected through a reflow process later.
【００２６】そして、前記第一絶縁基板１１ａの第二凹
部１３や、その第一凹部１２の第二絶縁基板１１ｂ周囲
の下層は、図１の如く、受発光素子の保護および光外部
量子効率の向上などの目的のために、例えばエポキシ系
樹脂や熱可塑性樹脂等の光学的に透過率の高い透光性樹
脂２８で、前記受発光素子１４，１５を十分覆う程度に
充填硬化される。その後、第一凹部１２の透光性樹脂２
８より上層部は、外乱光の遮蔽を目的に、例えばエポキ
シ系樹脂や熱可塑性樹脂等の遮光性樹脂２９で充填硬化
される。As shown in FIG. 1, the second concave portion 13 of the first insulating substrate 11a and the lower layer around the second insulating substrate 11b of the first concave portion 12 protect the light emitting and receiving element and prevent external quantum efficiency of light. For the purpose of improvement, a light-transmissive resin 28 having a high optical transmittance such as an epoxy resin or a thermoplastic resin is filled and cured to sufficiently cover the light emitting / receiving elements 14 and 15. Then, the transparent resin 2 in the first recess 12
The layer above 8 is filled and hardened with a light shielding resin 29 such as an epoxy resin or a thermoplastic resin for the purpose of shielding ambient light.
【００２７】このようにして本実施例の光結合装置を製
造するが、遮光性樹脂２９の充填硬化までの工程を、図
３，５，７，９の如く、前述した一枚の大型基板の状態
で行ない、図１０のように最後にこの一枚の大型基板を
ダイヤモンドブレードを用いたダイシングソーなどで、
スルーホール２３の一部を切断することにより個別に分
割して、従来にないリードフレームレス構造の表面実装
型光結合装置（フオトカプラ）を得る。In this way, the optical coupling device of this embodiment is manufactured. The steps up to the filling and curing of the light-shielding resin 29 are performed by the above-mentioned one large substrate as shown in FIGS. In the state, as shown in FIG. 10, finally, this large substrate is cut with a dicing saw using a diamond blade.
By cutting a part of the through hole 23, the through hole 23 is individually divided to obtain a surface mount type optical coupling device (photocoupler) having a lead frameless structure which has not existed in the past.
【００２８】なお、各基板１１ａ，１１ｂでの素子搭載
やワイヤボンデイングを、ダイシング分割後に行うこと
も可能であるが、この場合、凹部１２，１３でのボンデ
イング等が極めて細かい作業となるため、分割後に形状
誤差の生じるおそれがある各デバイスを保持しながら各
作業をすると、位置ずれ等がおこり、その信頼性に支障
が出る。また、第一絶縁基板１１ａのみを大型基板の状
態で処理し、第二絶縁基板１１ｂについて凹部１２に取
付け後、受光素子１５を搭載することも考えられるが、
特に第二絶縁基板１１ｂの場合、ダイシング前は一枚の
単純平板であるため、凹部１２内で処理するより平面上
で処理する方が断然有利である。そこで、本実施例で
は、両絶縁基板１１ａ，１１ｂをダイシング分割前の状
態で、各搭載およびボンデイング等の処理を複数デバイ
ス分一度に処理している。It is also possible to carry out element mounting and wire bonding on each of the substrates 11a and 11b after dicing and dividing, but in this case, since the bonding and the like in the recesses 12 and 13 are extremely fine work, division is performed. If each work is performed while holding each device that may cause a shape error later, a position shift or the like occurs, which impairs its reliability. It is also conceivable that only the first insulating substrate 11a is processed in the state of a large substrate, and the light receiving element 15 is mounted after mounting the second insulating substrate 11b in the recess 12.
In particular, in the case of the second insulating substrate 11b, since it is a single flat plate before dicing, it is far more advantageous to treat it on a flat surface than to treat it inside the recess 12. In view of this, in the present embodiment, both the insulating substrates 11a and 11b are processed before dicing and dividing, and each mounting and bonding process is performed for a plurality of devices at once.
【００２９】以上のように、薄膜状の立体配線電極部１
６ａ，１７ａを有する凹部１２，１３内に第二絶縁基板
１１ｂを取付け、さらに透光性樹脂２８および遮光性樹
脂２９を充填したリードフレームレス構造とすることに
より、金属リードピンを省略でき、従来問題であつたリ
ードピンの曲がりや変形を考慮する必要がなくなる。As described above, the thin film-shaped three-dimensional wiring electrode portion 1
By mounting the second insulating substrate 11b in the recesses 12 and 13 having 6a and 17a, and further by using the lead frameless structure in which the translucent resin 28 and the light shielding resin 29 are filled, the metal lead pin can be omitted, and the conventional problem. It is no longer necessary to consider bending or deformation of the lead pin.
【００３０】また、第一絶縁基板１１ａや第二絶縁基板
１１ｂに直接接する部材として、透光性樹脂２８および
遮光性樹脂２９を充填したことにより、半田リフロー処
理工程において、第一絶縁基板１１ａと各樹脂２８，２
９との熱膨張係数の差は、従来使用している金属リード
フレームとモールド樹脂との熱膨張係数の差より小さく
なる。Further, by filling the light-transmitting resin 28 and the light-shielding resin 29 as a member which is in direct contact with the first insulating substrate 11a and the second insulating substrate 11b, the first insulating substrate 11a and the first insulating substrate 11a are filled in the solder reflow process. Each resin 28, 2
The difference in the coefficient of thermal expansion from that of No. 9 is smaller than the difference in the coefficient of thermal expansion between the metal lead frame and the molding resin which are conventionally used.
【００３１】具体的には、温度２０℃〜２３０℃におい
て、例えば充填樹脂としてエポキシ樹脂を使用した場
合、その熱膨張係数は６〜８×１０-5［℃-1］であるの
に対し、例えば第一絶縁基板１１ａとして液晶ポリマー
を使用した場合、その熱膨張係数は５〜７×１０-5［℃
-1］である。また、鉄係フレーム等の金属リードフレー
ムの熱膨張係数は１.２〜１.４×１０-6［℃-1］であ
る。このことから、第一絶縁基板１１ａと充填樹脂２
８，２９との熱膨張係数の差は、従来の金属フレームに
比較して小さいことがわかる。Specifically, when an epoxy resin is used as a filling resin at a temperature of 20 ° C. to 230 ° C., the coefficient of thermal expansion thereof is 6 to 8 × 10 -5 [° C. -1 ], whereas For example, when a liquid crystal polymer is used as the first insulating substrate 11a, its thermal expansion coefficient is 5 to 7 × 10 −5 [° C.
-1 ]. Further, the coefficient of thermal expansion of a metal lead frame such as an iron frame is 1.2 to 1.4 × 10 −6 [° C. −1 ]. From this, the first insulating substrate 11a and the filling resin 2
It can be seen that the difference in the coefficient of thermal expansion between No. 8 and 29 is smaller than that in the conventional metal frame.
【００３２】したがつて、第一絶縁基板１１ａ上の電極
部と各充填樹脂との間での剥離およびこれらのクラツク
の発生を防ぐことができ、オープンおよびシヨート等の
電気的特性の改良を行うことができる。Therefore, it is possible to prevent the peeling between the electrode portion on the first insulating substrate 11a and each filling resin and the generation of these cracks, and to improve the electrical characteristics such as open and short. be able to.
【００３３】そして、受発光素子１４，１５の光学的位
置決めを、第二絶縁基板１１ｂの位置決めによつて行う
ので、精度良く位置決めでき、製品品質上の向上を図る
ことができる。Since the optical positioning of the light emitting / receiving elements 14 and 15 is performed by the positioning of the second insulating substrate 11b, the positioning can be performed accurately and the product quality can be improved.
【００３４】（第二実施例）図１３は本発明の第二実施
例に係わる光結合装置（フオトカプラ）の断面図、図１
４は第二絶縁基板に素子を搭載した状態の斜視図であ
る。(Second Embodiment) FIG. 13 is a sectional view of an optical coupling device (photocoupler) according to a second embodiment of the present invention.
FIG. 4 is a perspective view showing a state in which elements are mounted on the second insulating substrate.
【００３５】本実施例は、図１３，１４の如く、第二絶
縁基板１１ｂが、液晶ポリマー等の耐熱性絶縁樹脂を射
出成形などの手法を用いて成形しており、第一実施例と
異なり該耐熱性絶縁樹脂は遮光性とされる。In this embodiment, as shown in FIGS. 13 and 14, the second insulating substrate 11b is formed of a heat resistant insulating resin such as liquid crystal polymer by injection molding or the like, which is different from the first embodiment. The heat resistant insulating resin has a light shielding property.
【００３６】そして、受光素子１５の受光面は、第二絶
縁基板１１ｂとは逆側に向けて配置される。さらに、第
二絶縁基板１１ｂは受光素子１５を第二凹部１３内の発
光素子１４に対向させるよう、下向きに取付けられる。Then, the light receiving surface of the light receiving element 15 is arranged so as to face the side opposite to the second insulating substrate 11b. Further, the second insulating substrate 11b is attached downward so that the light receiving element 15 faces the light emitting element 14 in the second recess 13.
【００３７】このように構成すれば、例えば、図１３の
如く、第二凹部１３内に透光性樹脂２８にて充填し、そ
の後、第二絶縁基板１１ｂを取付け、この上部に遮光性
樹脂２９を直接充填できる。そうすると、両樹脂の注入
量の調整が楽になり、作業を簡易にできる。With this structure, for example, as shown in FIG. 13, the second recess 13 is filled with the transparent resin 28, and then the second insulating substrate 11b is attached, and the light-shielding resin 29 is provided on the upper portion. Can be filled directly. Then, the injection amount of both resins can be adjusted easily, and the work can be simplified.
【００３８】なお、本発明は、上記実施例に限定される
ものではなく、本発明の範囲内で上記実施例に多くの修
正および変更を加え得ることは勿論である。The present invention is not limited to the above embodiments, and it goes without saying that many modifications and changes can be made to the above embodiments within the scope of the present invention.
【００３９】例えば、上記実施例では、薄膜状の立体配
線電極部として金属メツキを用いていたが、金属薄膜を
蒸着法により形成してもよい。For example, in the above embodiment, the metal plating was used as the thin film-shaped three-dimensional wiring electrode portion, but the metal thin film may be formed by the vapor deposition method.
【００４０】また、発光素子１４と受光素子１５を、上
記実施例と夫々逆側の絶縁基板に搭載してもよい。Further, the light emitting element 14 and the light receiving element 15 may be mounted on the insulating substrates on the opposite sides of the above embodiments.
【００４１】さらに、上記実施例では、第一絶縁基板１
１ａの各凹部１２，１３を矩形としていたが、特に第二
凹部１３の側壁を傾斜面とし、さらにここにメツキ処理
を施して集光用の反射レンズを形成しても良い。Further, in the above embodiment, the first insulating substrate 1
Although the concave portions 12 and 13 of 1a are rectangular, the side wall of the second concave portion 13 may be an inclined surface, and a plating process may be performed on the side wall to form a reflecting lens for condensing.
【００４２】さらにまた、図１１に示したように、上記
実施例では、第二凹部１３が第二絶縁基板１１ｂからは
み出るよう設計され、該はみ出し部分から第二凹部１３
内に透光性樹脂２８を注入可能としていたが、第二凹部
１３の開口面積を第二絶縁基板１１ｂの板面より小さく
形成し、第二凹部１３を密閉状態としてもよい。そうす
れば、第二絶縁基板１１ｂによつて、外乱光を第二凹部
１３に対して遮断でき、保護用の樹脂モールドの材質と
して、遮光性のものを使用する必要がなくなる。したが
つて、モールド樹脂２８が一種類で済み、モールド作業
工程を簡略化できる。Furthermore, as shown in FIG. 11, in the above-mentioned embodiment, the second recess 13 is designed to protrude from the second insulating substrate 11b, and the second recess 13 is protruded from the protruding portion.
Although the transparent resin 28 can be injected into the inside, the opening area of the second recess 13 may be formed smaller than the plate surface of the second insulating substrate 11b, and the second recess 13 may be hermetically sealed. Then, the second insulating substrate 11b can block ambient light from the second recess 13, and it is not necessary to use a light-shielding material as the material of the protective resin mold. Therefore, only one type of molding resin 28 is required, and the molding process can be simplified.
【００４３】また、各凹部１２，１３の角部を丸めて、
各配線電極部１６ａ，１７ａの断線、剥離を防止しても
よい。Also, by rounding the corners of the recesses 12 and 13,
The wiring electrode portions 16a and 17a may be prevented from breaking or peeling.
【００４４】さらに、第一凹部１２の底面に、第二絶縁
基板１１ｂを位置決めするため、第二凹部１３より浅い
第三凹部を形成してもよい。Furthermore, in order to position the second insulating substrate 11b on the bottom surface of the first recess 12, a third recess shallower than the second recess 13 may be formed.
【００４５】[0045]
【発明の効果】以上の説明から明らかな通り、本発明請
求項１によると、一方の素子を搭載する第一絶縁基板
と、他方の素子を搭載する第二絶縁基板とを設け、夫々
の薄膜状の立体配線電極部に素子を搭載後、第一絶縁基
板の凹部に第二絶縁基板を取付け、凹部に樹脂をモール
ドしているので、次の効果が期待できる。As is apparent from the above description, according to claim 1 of the present invention, a first insulating substrate on which one element is mounted and a second insulating substrate on which the other element is mounted are provided, and each thin film is provided. Since the second insulating substrate is attached to the concave portion of the first insulating substrate and the resin is molded in the concave portion after the element is mounted on the three-dimensional wiring electrode portion in the shape of, the following effects can be expected.
【００４６】（１）従来の金属リードフレーム構造に変
わり、金属リードフレームを無くした構造とすることが
できるので、対半田リフロー性等が向上し、より信頼性
が向上した光結合装置の提供が可能となる。(1) Instead of the conventional metal lead frame structure, a structure without a metal lead frame can be used. Therefore, it is possible to provide an optical coupling device with improved solder reflowability and improved reliability. It will be possible.
【００４７】（２）金属リードフレームレス構造にした
ことで、金属リードフレームが不要となり、より小型化
にした光結合装置の提供が可能となる。(2) The metal lead frame-less structure eliminates the need for a metal lead frame and makes it possible to provide a more compact optical coupling device.
【００４８】（３）金属リードフレームレス構造にした
ことで、プリント基板上への表面実装時に、金属リード
フレームの曲げおよび変形による不良を考慮しなくても
よくなる。さらに、熱膨張係数の差を考慮する必要もな
くなる。このことから、半田リフロー処理工程時に、モ
ールド樹脂とメツキ層との剥離や、モールド樹脂のクラ
ツクの発生を防ぐことができ、それによるメツキ電極部
の破断や、金属ワイヤーの断線、クラツクや剥離の隙間
への水分の侵入による受発光素子のオープンおよびシヨ
ート不良を抑えることができる。(3) By adopting the metal lead frameless structure, it is not necessary to consider defects due to bending and deformation of the metal lead frame during surface mounting on the printed circuit board. Furthermore, it is not necessary to consider the difference in the coefficient of thermal expansion. From this, during the solder reflow treatment step, it is possible to prevent the peeling between the mold resin and the plating layer, or the occurrence of cracks in the molding resin, which may cause breakage of the plating electrode portion, disconnection of the metal wire, cracking or peeling. It is possible to prevent the light emitting / receiving element from opening and a short defect due to the entry of moisture into the gap.
【００４９】（４）第二絶縁基板を位置決めすることで
光学的位置決めを行えるので、受発光素子を位置精度を
高め得、光結合装置の製品ばらつきを抑えることが可能
となると共に、作製上の工程の短縮化が図れるため、光
結合装置のより低価格化が実現できる。(4) Since the optical positioning can be performed by positioning the second insulating substrate, it is possible to improve the positional accuracy of the light emitting / receiving element, suppress the product variation of the optical coupling device, and, at the time of manufacturing, Since the process can be shortened, the cost of the optical coupling device can be further reduced.
【００５０】請求項２によると、発光素子と受光素子と
を対向配置する際、受光素子を第二絶縁基板の上面で視
認しながら発光素子に対する位置決めを行える。したが
つて、光学的位置決め作業が容易になる。According to the second aspect, when the light emitting element and the light receiving element are arranged to face each other, the light receiving element can be positioned with respect to the light emitting element while visually recognizing the light receiving element on the upper surface of the second insulating substrate. Therefore, the optical positioning work becomes easy.
【００５１】請求項３によると、第二凹部内に透光性樹
脂を注入後、これを第二絶縁基板で閉塞し、その上に遮
光性樹脂を注入できる。そうすると、二種類の樹脂の注
入量の調整が容易となる。According to the third aspect, after the light-transmissive resin is injected into the second recess, it is closed with the second insulating substrate, and the light-shielding resin can be injected thereon. Then, it becomes easy to adjust the injection amounts of the two types of resins.
【００５２】あるいは、第二絶縁基板で外乱光を第二凹
部に対して遮断することで、保護用の樹脂モールドの材
質として遮光性のものを使用する必要がなくなり、モー
ルド樹脂が一種類で済む。Alternatively, by blocking the ambient light to the second recess by the second insulating substrate, it is not necessary to use a light-shielding material for the protective resin mold, and only one type of molding resin is required. ..
【００５３】これらによつて、モールド作業工程を簡略
化できる。With these, the molding process can be simplified.
【００５４】請求項４によると、各素子と、これと直接
接続する電極部との間に、半田バンプを介在させている
ので、工程上、素子の搭載が容易となり、また受発光素
子を容易に対向配置できるため、その位置精度を高くで
き、光結合装置の製品ばらつきを抑えることが可能とな
る。また、作製上の短縮化が図れるため、より低価格化
を実現できるといつた優れた効果がある。According to the present invention, since the solder bump is interposed between each element and the electrode portion directly connected thereto, the element can be easily mounted in the process and the light emitting / receiving element can be easily manufactured. Since they can be arranged facing each other, the positional accuracy can be increased, and it is possible to suppress variations in products of the optical coupling device. In addition, since the manufacturing time can be shortened, it is possible to obtain an excellent effect when the cost can be further reduced.
【図１】本発明の第一実施例に係わる光結合装置の断面
図FIG. 1 is a sectional view of an optical coupling device according to a first embodiment of the present invention.
【図２】第二絶縁基板に素子を搭載した状態の斜視図FIG. 2 is a perspective view showing a state in which elements are mounted on a second insulating substrate.
【図３】一枚の大型基板を用いて第一絶縁基板を成型し
た状態を示す斜視図FIG. 3 is a perspective view showing a state where a first insulating substrate is molded using one large substrate.
【図４】図３の一デバイス分を示す拡大斜視図FIG. 4 is an enlarged perspective view showing one device of FIG.
【図５】一枚の大型第一絶縁基板に立体配線電極部を形
成した状態の斜視図FIG. 5 is a perspective view showing a state where a three-dimensional wiring electrode portion is formed on one large first insulating substrate.
【図６】図５の一デバイス分を示す拡大斜視図6 is an enlarged perspective view showing one device of FIG.
【図７】一枚の大型第一絶縁基板の第二凹部に素子を搭
載した状態の斜視図FIG. 7 is a perspective view showing a state where an element is mounted in the second recess of one large first insulating substrate.
【図８】図７の一デバイス分を示す斜視図FIG. 8 is a perspective view showing one device of FIG.
【図９】一枚の大型第一絶縁基板の第一凹部に第二絶縁
基板を挿着した状態の斜視図FIG. 9 is a perspective view showing a state in which a second insulating substrate is inserted into the first recess of one large first insulating substrate.
【図１０】ダイシング切断動作を示す斜視図FIG. 10 is a perspective view showing a dicing cutting operation.
【図１１】図１０の一デバイス分を示す斜視図11 is a perspective view showing one device of FIG.
【図１２】第一絶縁基板の底面視斜視図FIG. 12 is a bottom perspective view of the first insulating substrate.
【図１３】本発明の第二実施例に係わる光結合装置の断
面図FIG. 13 is a sectional view of an optical coupling device according to a second embodiment of the present invention.
【図１４】第二絶縁基板に素子を搭載した状態の斜視図FIG. 14 is a perspective view showing a state in which elements are mounted on a second insulating substrate.
【図１５】従来の光結合装置を示す斜視図FIG. 15 is a perspective view showing a conventional optical coupling device.
【図１６】従来の光結合装置を示す断面図FIG. 16 is a sectional view showing a conventional optical coupling device.
１１ａ 第一絶縁基板 １１ｂ 第二絶縁基板 １２ 第一凹部 １３ 第二凹部 １４ 発光素子 １５ 受光素子 １６ａ〜１６ｂ，１７ａ〜１７ｂ 第一立体配線電
極部 １８ 第二立体配線電極部 ２７ 半田バンプ ２８ 透光性樹脂 ２９ 遮光性樹脂11a 1st insulating substrate 11b 2nd insulating substrate 12 1st recessed part 13 2nd recessed part 14 Light emitting element 15 Light receiving element 16a-16b, 17a-17b 1st three-dimensional wiring electrode part 18 Second three-dimensional wiring electrode part 27 Solder bump 28 Light transmission Resin 29 Light-shielding resin
Claims (4)
るよう配置され、これらがモールド樹脂にて樹脂封止さ
れてなる光結合装置において、 第一絶縁基板に第一凹部が形成され、 該第一凹部の底面に第二凹部が形成され、 該第一凹部および第二凹部に、薄膜状の配線電極部が立
体的に形成され、 該第二凹部の電極部に、前記発光素子および受光素子の
うち一方の素子が搭載され、 前記第一凹部に取付け可能な大きさの第二絶縁基板が設
けられ、 該第二絶縁基板に薄膜状の配線電極部が形成され、 該第二絶縁基板の配線電極部に、前記発光素子および受
光素子のうち他方の素子が搭載され、 該他方の素子が搭載された第二絶縁基板は、前記第一絶
縁基板の第一凹部の底部に取付けられて、前記発光素子
および受光素子が対向配置されたことを特徴とする光結
合装置。1. An optical coupling device in which a light emitting element and a light receiving element are arranged so as to be optically coupled, and these are resin-sealed with a molding resin, wherein a first concave portion is formed in a first insulating substrate, A second recess is formed on the bottom surface of the first recess, thin-film wiring electrode portions are three-dimensionally formed on the first recess and the second recess, and the light emitting element and the light emitting element are formed on the electrode portion of the second recess. One of the light receiving elements is mounted, a second insulating substrate having a size attachable to the first recess is provided, and a thin film wiring electrode portion is formed on the second insulating substrate. The other of the light emitting element and the light receiving element is mounted on the wiring electrode portion of the substrate, and the second insulating substrate on which the other element is mounted is attached to the bottom of the first recess of the first insulating substrate. The light emitting element and the light receiving element are arranged facing each other. Optical coupling device according to claim.
配線電極部に、請求項１記載の他方の素子がその光授受
面を第二絶縁基板に対面するよう搭載され、第二凹部内
の一方の素子と、第二絶縁基板上の他方の素子は、前記
第二絶縁基板を挟んで対向配置され、前記第二絶縁基板
は、発光素子からの光を受光素子に透過するよう透光性
とされたことを特徴とする光結合装置。2. The second three-dimensional wiring electrode portion of the second insulating substrate according to claim 1, wherein the other element according to claim 1 is mounted so that its light transmitting / receiving surface faces the second insulating substrate. One element in the recess and the other element on the second insulating substrate are arranged so as to face each other with the second insulating substrate interposed therebetween, and the second insulating substrate transmits light from the light emitting element to the light receiving element. An optical coupling device characterized by being translucent.
配線電極部に、請求項１記載の他方の素子がその光授受
面を第二絶縁基板の逆側に向けて搭載され、第二絶縁基
板は他方の素子を第二凹部側に向けて一方の素子に対向
させるよう取付けられ、前記第二絶縁基板は、外乱光を
遮断するよう遮光性とされたことを特徴とする光結合装
置。3. The second three-dimensional wiring electrode portion of the second insulating substrate according to claim 1, wherein the other element according to claim 1 is mounted with its light transmitting / receiving surface facing the opposite side of the second insulating substrate. The second insulating substrate is attached so that the other element faces the second concave portion and faces the one element, and the second insulating substrate has a light-shielding property so as to block ambient light. Coupling device.
の光結合装置において、第一絶縁基板の第一立体配線電
極部と、第二絶縁基板の第二立体配線電極部との間に、
これらを電気的に接続する半田バンプが介在されたこと
を特徴とする光結合装置。4. The optical coupling device according to claim 1, 2, or 3, between the first three-dimensional wiring electrode portion of the first insulating substrate and the second three-dimensional wiring electrode portion of the second insulating substrate. To
An optical coupling device characterized in that a solder bump for electrically connecting these is interposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8193292A JP2927602B2 (en) | 1992-04-03 | 1992-04-03 | Optical coupling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8193292A JP2927602B2 (en) | 1992-04-03 | 1992-04-03 | Optical coupling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05283734A true JPH05283734A (en) | 1993-10-29 |
| JP2927602B2 JP2927602B2 (en) | 1999-07-28 |
Family
ID=13760256
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8193292A Expired - Lifetime JP2927602B2 (en) | 1992-04-03 | 1992-04-03 | Optical coupling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2927602B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6588946B1 (en) | 1999-11-22 | 2003-07-08 | Sharp Kabushiki Kaisha | Optical coupling device |
| JP2008205351A (en) * | 2007-02-22 | 2008-09-04 | Matsushita Electric Works Ltd | Optical linked semiconductor relay |
-
1992
- 1992-04-03 JP JP8193292A patent/JP2927602B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6588946B1 (en) | 1999-11-22 | 2003-07-08 | Sharp Kabushiki Kaisha | Optical coupling device |
| JP2008205351A (en) * | 2007-02-22 | 2008-09-04 | Matsushita Electric Works Ltd | Optical linked semiconductor relay |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2927602B2 (en) | 1999-07-28 |
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