JPH05279846A - Target for sputtering and formation of sputtered tion film - Google Patents
Target for sputtering and formation of sputtered tion filmInfo
- Publication number
- JPH05279846A JPH05279846A JP10373492A JP10373492A JPH05279846A JP H05279846 A JPH05279846 A JP H05279846A JP 10373492 A JP10373492 A JP 10373492A JP 10373492 A JP10373492 A JP 10373492A JP H05279846 A JPH05279846 A JP H05279846A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- tion
- tion film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、スパッタ用ターゲット
及びスパッタＴｉＯＮ膜成膜方法に関する。本発明は、
例えば、半導体装置の製造の際のスパッタ技術において
用いることができる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering target and a sputtering TiON film forming method. The present invention is
For example, it can be used in a sputtering technique when manufacturing a semiconductor device.
【０００２】[0002]
【従来の技術】スパッタ技術、特にＴｉＯＮ成膜用スパ
ッタ技術は、例えば半導体装置製造の際に、Ａｌ系材料
配線の下層にバリアメタル層を形成する技術等として用
いられる。2. Description of the Related Art Sputtering technology, particularly sputtering technology for forming TiON film, is used as a technology for forming a barrier metal layer under an Al-based material wiring, for example, when manufacturing a semiconductor device.
【０００３】即ち、近年の半導体装置の微細化に伴い、
そのＡｌ配線プロセスにおいては、浅くなった拡散層に
コンタクト部で接するＡｌの突き抜け防止のため、Ａｌ
下層にＴｉＷ、ＴｉＮ等のバリア層を敷くことが一般的
になってきており、その中でも、ＴｉＯＮ膜はＡｌとＳ
ｉの間に存在すると、両者の反応を抑える効果が高く、
バリア層として極めて優れている。That is, with the recent miniaturization of semiconductor devices,
In the Al wiring process, in order to prevent penetration of Al that contacts the shallow diffusion layer at the contact portion,
It is becoming common to lay a barrier layer such as TiW or TiN as the lower layer. Among them, the TiON film is made of Al and S.
If it exists between i, the effect of suppressing the reaction between the two is high,
Excellent as a barrier layer.
【０００４】従来、例えば上記のようにバリア層として
用いるＴｉＯＮ膜は、純Ｔｉターゲットを用い、Ｎ2 −
Ｏ2 混合ガス中で反応性スパッタ成膜する場合が多い。Conventionally, for example, a TiON film used as a barrier layer as described above uses a pure Ti target and N 2 −.
In many cases, reactive sputtering film formation is performed in an O 2 mixed gas.
【０００５】一方、ＴｉＯＮ膜は、含有される酸素の量
によって、その抵抗、バリア性が大きく異なる。即ち、
図２に示すように、形成時の酸素ガス流量（この流量に
より、ＴｉＯＮ中のＯの量が規定されるものであり、こ
れについては、図３に、酸素ガス流量とＴｉＯＮ中の各
元素の比率を示すとおりである）の変化によって、抵抗
値が大きく変わる。また、図４に示すように、ＴｉＯＮ
中の酸素含有量により、リーク電流が大きく異なって来
る。On the other hand, the TiON film greatly differs in resistance and barrier properties depending on the amount of oxygen contained. That is,
As shown in FIG. 2, a flow rate of oxygen gas during formation (this flow rate defines the amount of O in TiON, which is shown in FIG. 3 for the oxygen gas flow rate and each element in TiON. The change in (as the ratio is shown) significantly changes the resistance value. In addition, as shown in FIG.
The leakage current greatly differs depending on the oxygen content in the material.
【０００６】更に、従来のスパッタ成膜技術の場合、例
えば枚葉式スパッタ装置による反応性スパッタの場合、
図５に示すように、何枚かのウェーハを連続で処理する
と、スパッタガス中の酸素分圧の変化（図６参照）等に
よって、次第に抵抗が上昇する。このように従来技術に
あっては、形成するＴｉＯＮの膜質の安定化が難しいこ
とが明らかになっている。Further, in the case of the conventional sputtering film forming technique, for example, in the case of reactive sputtering by a single wafer type sputtering apparatus,
As shown in FIG. 5, when several wafers are continuously processed, the resistance gradually increases due to changes in the oxygen partial pressure in the sputtering gas (see FIG. 6) and the like. As described above, it has been revealed that it is difficult to stabilize the quality of the formed TiON film in the conventional technique.
【０００７】[0007]
【発明の目的】本発明は上述した従来技術の問題点を解
決して、スパッタによるＴｉＯＮ膜の形成において、常
に組成の安定したＴｉＯＮ膜を得ることができる技術を
提供せんとするものであり、これを可能とするスパッタ
用ターゲットを提供することを目的とし、また、スパッ
タＴｉＯＮ膜成膜方法を提供することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to solve the above-mentioned problems of the prior art and to provide a technique capable of always obtaining a TiON film having a stable composition in the formation of a TiON film by sputtering. An object is to provide a sputtering target that enables this, and an object is to provide a method for forming a sputtered TiON film.
【０００８】[0008]
【問題点を解決するための手段】本発明の請求項１の発
明は、Ｔｉ、Ｏ、及びＮを所望の比率で化合させたスパ
ッタ用ターゲットであって、これにより上記目的を達成
するものであ。The invention according to claim 1 of the present invention is a sputtering target in which Ti, O, and N are combined in a desired ratio, thereby achieving the above object. Ah.
【０００９】本発明の請求項２の発明は、Ｏの比率が１
２〜２５原子％である請求項１に記載のスパッタ用ター
ゲットであって、これにより上記目的を達成するもので
ある。According to a second aspect of the present invention, the ratio of O is 1
The sputtering target according to claim 1, which has a content of 2 to 25 atom%, and achieves the above object.
【００１０】本発明の請求項３の発明は、請求項１また
は２のスパッタ用ターゲットを使用したスパッタＴｉＯ
Ｎ膜成膜方法であって、これにより上記目的を達成する
ものである。The invention according to claim 3 of the present invention is a sputtered TiO 2 using the sputtering target according to claim 1 or 2.
A method for forming an N film, which achieves the above object.
【００１１】[0011]
【作用】本発明によれば、Ｔｉ、Ｏ、Ｎを予め所望の比
率で化合させ、例えばその化合物を焼結させたものをス
パッタのターゲットとして用いることにより、常に安定
した組成比でＴｉＯＮ膜をスパッタ成膜できるようにな
る。この技術を半導体装置の製造に適用すると、ウェー
ハ間のバラツキ等の少ない、安定したＴｉＯＮ膜を形成
できる。According to the present invention, Ti, O, and N are combined in a desired ratio in advance and, for example, a compound obtained by sintering the compound is used as a sputtering target to form a TiON film with a stable composition ratio. It becomes possible to form a film by sputtering. When this technology is applied to the manufacture of semiconductor devices, it is possible to form a stable TiON film with little variation between wafers.
【００１２】[0012]
【実施例】以下本発明の実施例について、図面を参照し
て説明する。なお当然のことではあるが、本発明は実施
例により限定を受けるものではない。Embodiments of the present invention will be described below with reference to the drawings. Of course, the present invention is not limited to the embodiments.
【００１３】実施例１ 本実施例は、ＴｉＯＮの焼結ターゲットを所望の組成で
予め作製し、そのターゲットを用いて半導体装置のＡｌ
配線下層にバリアメタルをスパッタ成膜する例である。Example 1 In this example, a TiON sintered target was prepared in advance with a desired composition, and the target was used to form an Al for a semiconductor device.
This is an example in which a barrier metal is sputtered on the lower layer of the wiring.
【００１４】本実施例では、Ｔｉ、Ｎ、Ｏの比率をその
酸素の含有量を１２〜２５原子％程度として（図２〜図
４、特に図４参照）、例えば以下の組成で化合したもの
の焼結ターゲットを作製する。選定する組成は、バリア
性を満足し、コンタクト抵抗が許容できる範囲の抵抗で
あればよい。 ＴｉＯＮ組成例：Ｔｉ ５０％，Ｎ ３０％，Ｏ ２０
％（ａｔ％）In the present embodiment, the ratio of Ti, N and O is set so that the oxygen content thereof is about 12 to 25 atomic% (see FIGS. 2 to 4, especially FIG. 4) and, for example, the following compositions are used. A sintering target is produced. The composition to be selected may be a resistance that satisfies the barrier property and is within a range in which the contact resistance is allowable. TiON composition example: Ti 50%, N 30%, O 20
% (At%)
【００１５】この焼結ターゲットを用い、本実施例では
図１に示すようなスパッタ装置内で、以下の条件でスパ
ッタ成膜した。図１中、１はこのスパッタターゲット、
２はＴｉＯＮ膜を形成すべき基板、３はスパッタチャン
バー、４はプロセスガス（Ａｒ）の流れ、５はマグネト
ロンカソード、６はステージ、７はホルダーである。 デポパワー（ＤＣ） ４ｋＷ プロセスガス Ａｒ １００ｓｃｃｍ スパッタ圧力 ０．３Ｐａ 基板加熱 １５０℃Using this sintered target, in this embodiment, sputtering was performed under the following conditions in a sputtering apparatus as shown in FIG. In FIG. 1, 1 is this sputter target,
2 is a substrate on which a TiON film is to be formed, 3 is a sputtering chamber, 4 is a flow of a process gas (Ar), 5 is a magnetron cathode, 6 is a stage, and 7 is a holder. Depot power (DC) 4 kW Process gas Ar 100 sccm Sputtering pressure 0.3 Pa Substrate heating 150 ° C.
【００１６】これにより、ウェーハ間のバラツキの少な
い、ほぼ均一に２０％の酸素が含有されたＴｉＯＮ膜の
スパッタによる形成が可能となった。As a result, it is possible to form a TiON film containing 20% oxygen almost uniformly by sputtering with little variation between wafers.
【００１７】[0017]
【発明の効果】本発明によれば、スパッタによるＴｉＯ
Ｎ膜の形成において、常に組成の安定したＴｉＯＮ膜を
得ることができるスパッタ用ターゲットを提供すること
ができ、また、同様な効果を有するスパッタＴｉＯＮ膜
成膜方法を提供することができる。According to the present invention, sputtered TiO 2 is used.
In forming the N film, it is possible to provide a sputtering target that can always obtain a TiON film having a stable composition, and it is possible to provide a sputtering TiON film forming method having the same effect.
【図１】実施例１で用いたスパッタ装置の構成図であ
る。FIG. 1 is a configuration diagram of a sputtering apparatus used in Example 1.
【図２】従来のスパッタ法による酸素ガス流量と生成Ｔ
ｉＯＮの抵抗との関係を示すグラフである。FIG. 2 is a flow rate of oxygen gas and T produced by a conventional sputtering method.
It is a graph which shows the relationship with the resistance of iON.
【図３】従来のスパッタ法による酸素ガス流量と生成Ｔ
ｉＯＮ中の各元素の比率との関係を示すグラフである。FIG. 3 shows the flow rate of oxygen gas and the T produced by the conventional sputtering method.
It is a graph which shows the relationship with the ratio of each element in iON.
【図４】ＴｉＯＮの酸素含有量とリーク電流との関係を
示すグラフである。FIG. 4 is a graph showing the relationship between the oxygen content of TiON and the leak current.
【図５】従来技術の問題点を示す図で、ＴｉＯＮ膜のス
パッタ反応性成膜時のウェーハ間シート抵抗分布を示す
図である。FIG. 5 is a diagram showing a problem of the conventional technique, and is a diagram showing a sheet resistance distribution between wafers at the time of sputtering reactive deposition of a TiON film.
【図６】従来技術の問題点を示す図で、ＴｉＯＮ成膜時
のスパッタガス中酸素分圧の変化を示す図である。FIG. 6 is a diagram showing a problem in the conventional technique, and is a diagram showing a change in oxygen partial pressure in a sputtering gas during TiON film formation.
１ スパッタターゲット ２ 基板 ３ スパッタチャンバー 1 Sputter target 2 Substrate 3 Sputter chamber
Claims (3)
たスパッタ用ターゲット。1. A sputtering target in which Ti, O, and N are combined in a desired ratio.
１に記載のスパッタ用ターゲット。2. The sputtering target according to claim 1, wherein the O ratio is 12 to 25 atomic%.
を使用したスパッタＴｉＯＮ膜成膜方法。3. A sputtering TiON film forming method using the sputtering target according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10373492A JPH05279846A (en) | 1992-03-30 | 1992-03-30 | Target for sputtering and formation of sputtered tion film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10373492A JPH05279846A (en) | 1992-03-30 | 1992-03-30 | Target for sputtering and formation of sputtered tion film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05279846A true JPH05279846A (en) | 1993-10-26 |
Family
ID=14361866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10373492A Pending JPH05279846A (en) | 1992-03-30 | 1992-03-30 | Target for sputtering and formation of sputtered tion film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05279846A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007246986A (en) * | 2006-03-16 | 2007-09-27 | Toshiba Corp | Method for producing sputtering target |
| JP2011134438A (en) * | 2011-03-14 | 2011-07-07 | Toshiba Corp | Sputtering target, interface layer film for phase change optical recording medium using same, method of producing same, and phase change optical recording medium |
| CN102373416A (en) * | 2010-08-26 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method of shell and shell manufactured by same |
| CN108074976A (en) * | 2016-11-14 | 2018-05-25 | 东京毅力科创株式会社 | TiN mesenterys and forming method thereof |
-
1992
- 1992-03-30 JP JP10373492A patent/JPH05279846A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007246986A (en) * | 2006-03-16 | 2007-09-27 | Toshiba Corp | Method for producing sputtering target |
| JP4714051B2 (en) * | 2006-03-16 | 2011-06-29 | 株式会社東芝 | Sputtering target manufacturing method, metal oxynitride film manufacturing method, and phase change optical recording medium manufacturing method |
| CN102373416A (en) * | 2010-08-26 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Manufacturing method of shell and shell manufactured by same |
| JP2011134438A (en) * | 2011-03-14 | 2011-07-07 | Toshiba Corp | Sputtering target, interface layer film for phase change optical recording medium using same, method of producing same, and phase change optical recording medium |
| CN108074976A (en) * | 2016-11-14 | 2018-05-25 | 东京毅力科创株式会社 | TiN mesenterys and forming method thereof |
| CN108074976B (en) * | 2016-11-14 | 2021-03-05 | 东京毅力科创株式会社 | TiN-based film and method for forming same |
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