JPH0527503Y2 - - Google Patents
Info
- Publication number
- JPH0527503Y2 JPH0527503Y2 JP1987182515U JP18251587U JPH0527503Y2 JP H0527503 Y2 JPH0527503 Y2 JP H0527503Y2 JP 1987182515 U JP1987182515 U JP 1987182515U JP 18251587 U JP18251587 U JP 18251587U JP H0527503 Y2 JPH0527503 Y2 JP H0527503Y2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- substrate
- gas
- growth chamber
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 10
- 238000005192 partition Methods 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 36
- 239000013078 crystal Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は気相エピタキシアル成長装置、特に化
合物半導体結晶基板上に異なる複数の層を結晶成
長させる気相エピタキシアル成長装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vapor phase epitaxial growth apparatus, particularly to a vapor phase epitaxial growth apparatus for growing a plurality of different crystal layers on a compound semiconductor crystal substrate.
従来、この種の成長装置は第３図に示すように
複数の独立した例えば、２つの成長室３，４を１
つにまとめた構造の反応管１を有し、基板１０は
成長室３又は４に対向した位置に保持され、基板
保持治具９の回転によりそれぞれ成長されようと
する組成ガスが流れている成長室の対向位置間を
順次移動するような構造になつていた。２は加熱
炉、５，６は各成長室３，４内に設置した原料ソ
ース、７，８は原料ガス導入管である。
Conventionally, this type of growth apparatus has a plurality of independent growth chambers, for example two growth chambers 3 and 4, as shown in FIG.
The substrate 10 is held at a position facing the growth chamber 3 or 4, and the composition gas to be grown is flowing through the substrate 10 by rotation of the substrate holding jig 9. The structure was such that the rooms could be moved sequentially between opposing positions. 2 is a heating furnace, 5 and 6 are raw material sources installed in each of the growth chambers 3 and 4, and 7 and 8 are raw material gas introduction pipes.
上述した従来の気相エピタキシアル成長装置で
は基板１０がそれぞれの成長室３，４に対向した
位置で結晶成長を行うが、基板保持治具９の回転
停止位置精度が少しでも悪いと、成長毎に基板１
０と成長室３，４との相対位置がずれ、成長を行
つている室からのみ原料ガスが基板へと流れるの
ではなく、次の成長の準備のために他室において
流している原料ガスもまわり込んでしまい、基板
の成長層の均質性を悪くするという欠点があつ
た。また、原料ガスが片寄つて基板上に不均一に
接触して膜質が悪化するという欠点があつた。
In the conventional vapor phase epitaxial growth apparatus described above, crystal growth is performed in a position where the substrate 10 faces the respective growth chambers 3 and 4. However, if the precision of the rotation stop position of the substrate holding jig 9 is even slightly poor, each growth board 1
0 and the growth chambers 3 and 4 are shifted, and instead of the raw material gas flowing to the substrate only from the chamber where growth is being performed, the raw material gas flowing in other chambers in preparation for the next growth also flows. This has the disadvantage that it wraps around the substrate, impairing the homogeneity of the growth layer on the substrate. Further, there was a drawback that the raw material gas was unevenly distributed and came into contact with the substrate unevenly, resulting in deterioration of film quality.
本考案の目的は前記問題点を解消した気相エピ
タキシアル成長装置を提供することにある。 An object of the present invention is to provide a vapor phase epitaxial growth apparatus that eliminates the above-mentioned problems.
上述した従来の気相エピタキシアル成長装置に
対し、本考案は複数の成長室の開口部相互間を仕
切り、原料ガスのまわり込みを阻止するという相
違点を有する。
The present invention differs from the conventional vapor phase epitaxial growth apparatus described above in that the openings of the plurality of growth chambers are partitioned to prevent source gas from flowing around.
〔問題点を解決するための手段〕
前記目的を達成するため、本考案に係る気相エ
ピタキシアル成長装置は、複数の成長室と、基板
保持治具と、仕切管とを有する気相エピタキシア
ル成長装置であつて、
複数の成長室は、同一円周上に配列され、気相
成長用ガスを供給するものであり、
基板保持治具は、基板を成長室からの気相成長
用ガス流を横切る方向に支持し、基板を角回転さ
せて該基板を各成長室の開口部に順次移送するも
のであり、
仕切管は、各成長室の外周を取り囲んで配管さ
れ、成長室内の原料ガスの流れ方向に沿つて気体
を供給する環状の流路であり、気体吹出口を有
し、
気体吹出口は、各成長室の開口縁に開口され、
仕切管からの気体を成長室の開口部に対面させた
基板のまわりに向けて吹出し、各成長室から流出
する気相成長用ガス流の相互間を隔離するエアー
カーテンを形成させるものである。[Means for Solving the Problems] In order to achieve the above object, the vapor phase epitaxial growth apparatus according to the present invention is a vapor phase epitaxial growth apparatus having a plurality of growth chambers, a substrate holding jig, and a partition tube. The growth apparatus includes a plurality of growth chambers arranged on the same circumference and supplies gas for vapor phase growth, and a substrate holding jig that holds the substrate in the flow of gas for vapor phase growth from the growth chambers. The substrate is supported in a transverse direction, and the substrate is angularly rotated to sequentially transfer the substrate to the opening of each growth chamber. A partition pipe is installed around the outer periphery of each growth chamber, and is used to supply source gas in the growth chamber. It is an annular flow path that supplies gas along the flow direction of the growth chamber, and has a gas outlet, and the gas outlet is opened at the opening edge of each growth chamber,
The gas from the partition tube is blown out around the substrate facing the opening of the growth chamber to form an air curtain that isolates the vapor phase growth gas flows flowing out from each growth chamber.
次に本考案について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本考案の一実施例の断面図、第２図は
第１図のＡ−Ａ線断面図である。図において、反
応管１内に２つの独立した成長室３，４を同一円
周上に配列して形成し、かつ、反応管１と同軸上
の回転軸９ａのまわりに角回転して基板１０を各
成長室３，４の開口部３ａ，４ａに順次移送する
基板保持治具９を装備する。基板保持治具９は、
基板１０を成長室内の気相成長用ガス流を横切る
方向に支持し、基板１０の板面を成長室の開口部
に対向させる。各成長室３，４には所定のエピタ
キシアル層成長用原料ソース５，６が、加熱炉２
により所定の温度に加熱される位置に設置されて
おり、上流からのキヤリアガスの導入によりガス
として輸送され、導入管７，８から導入される所
定の原料ガスと化学反応し、生じた反応生成ガス
が各成長室３，４の開口部３ａ，４ａに向けて流
れる。 FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line A--A in FIG. In the figure, two independent growth chambers 3 and 4 are formed in a reaction tube 1 by arranging them on the same circumference, and the substrate 10 is rotated angularly around a rotation axis 9a coaxial with the reaction tube 1. A substrate holding jig 9 is provided to sequentially transfer the substrate to the openings 3a and 4a of each growth chamber 3 and 4. The substrate holding jig 9 is
The substrate 10 is supported in a direction transverse to the gas flow for vapor phase growth in the growth chamber, and the plate surface of the substrate 10 is opposed to the opening of the growth chamber. In each of the growth chambers 3 and 4, predetermined raw material sources 5 and 6 for epitaxial layer growth are provided in a heating furnace 2.
It is installed in a position where it is heated to a predetermined temperature by the carrier gas introduced from upstream, and is transported as a gas and chemically reacts with the predetermined raw material gas introduced from the introduction pipes 7 and 8, resulting in a reaction product gas. flows toward the openings 3a, 4a of each growth chamber 3,4.
さらに、本考案は各成長室３，４の外側を仕切
管１１でそれぞれ外装し、成長室３，４の外壁と
仕切管１１との間に環状の気体流路１１ａを形成
するとともに、各成長室３，４の開口部３ａ，４
ａの周縁に環状の気体吹出口１１ｂを形成する。
１２はメクラ板である。 Furthermore, the present invention covers the outside of each growth chamber 3, 4 with a partition tube 11, and forms an annular gas flow path 11a between the outer wall of the growth chambers 3, 4 and the partition tube 11. Openings 3a, 4 of chambers 3, 4
An annular gas outlet 11b is formed at the periphery of a.
12 is a blank board.
実施例において、基板保持治具９に基板１０を
垂直に保持し、基板保持治具９により基板１０を
角回転させ該基板１０を各成長室３，４の開口部
３ａ，４ａに順次移送し、各成長室３，４の開口
部３ａ，４ａに対向する基板１０に気相成長用ガ
スを接触させて均質にエピタキシアル成長を行
う。基板１０は成長室３，４よりも低い温度に加
熱されている。 In the embodiment, the substrate 10 is held vertically by the substrate holding jig 9, and the substrate 10 is rotated angularly by the substrate holding jig 9 to sequentially transfer the substrate 10 to the openings 3a and 4a of each of the growth chambers 3 and 4. , the substrate 10 facing the openings 3a, 4a of the growth chambers 3, 4 is brought into contact with a gas for vapor phase growth to uniformly perform epitaxial growth. The substrate 10 is heated to a lower temperature than the growth chambers 3 and 4.
本考案によれば、エピタキシアル成長を行う際
に、気体流路１１ａに気体を供給して環状の気体
吹出口１１ｂから成長室の開口部のまわりに吹き
出してエアーカーテンを形成し、該エアーカーテ
ンにより成長室の開口部相互間を隔離するため、
一方の成長室の開口部から吹き出されるガスが他
方の成長室にまわり込むのが防止され、基板１０
上にはエピタキシアル成長が均質に行われる。ま
た、成長室の外周に環状の気体流路１１ａにより
均一に気体を流すため、成長室の開口部からの原
料ガスは、成長室の外周に沿つた気体流により整
流され、原料ガスが基板１０上に均一に接触し、
基板１０上に結晶の均一性に優れた成長層が得ら
れる。 According to the present invention, when performing epitaxial growth, gas is supplied to the gas flow path 11a and blown out from the annular gas outlet 11b around the opening of the growth chamber to form an air curtain. to isolate the openings of the growth chamber from each other.
Gas blown out from the opening of one growth chamber is prevented from going around to the other growth chamber, and the substrate 10 is
Epitaxial growth takes place homogeneously on top. Further, in order to uniformly flow gas through the annular gas channel 11a around the outer periphery of the growth chamber, the raw material gas from the opening of the growth chamber is rectified by the gas flow along the outer periphery of the growth chamber, and the raw material gas is transferred to the substrate 10. evenly contact the top,
A grown layer with excellent crystal uniformity can be obtained on the substrate 10.
尚、実施例では２つの独立した成長室について
説明したが、３つ以上の成長室を有する場合でも
全く同様に応用できる。 In the embodiment, two independent growth chambers have been described, but the present invention can be applied in exactly the same way even when there are three or more growth chambers.
以上説明したように本考案は複数の成長室を有
する気相エピタキシアル成長装置において、成長
室外側にガスを流すことにより、他室からの反応
生成ガスのまわり込みを防ぐことができ、成長室
の周囲に沿つて流れる気体流により成長室からの
原料ガスが整流されて、原料ガスを基板に均一に
接触させることができ、均質なエピタキシアル層
を形成できる効果がある。
As explained above, in a vapor phase epitaxial growth apparatus having multiple growth chambers, the present invention can prevent reaction product gas from entering the growth chamber by flowing gas outside the growth chamber. The source gas from the growth chamber is rectified by the gas flow flowing around the periphery of the growth chamber, allowing the source gas to come into uniform contact with the substrate, which has the effect of forming a homogeneous epitaxial layer.
第１図は本考案の一実施例の断面図、第２図は
第１図のＡ−Ａ線断面図、第３図は従来装置の一
例の断面図である。
１……反応管、２……加熱炉、３，４……成長
室、３ａ，４ａ……開口部、５，６……原料ソー
ス、７，８……原料ガス導入管、９……基板保持
治具、１０……基板、１１……仕切管、１２……
メクラ板。
FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view taken along the line A--A in FIG. 1, and FIG. 3 is a sectional view of an example of a conventional device. 1... Reaction tube, 2... Heating furnace, 3, 4... Growth chamber, 3a, 4a... Opening, 5, 6... Raw material source, 7, 8... Raw material gas introduction tube, 9... Substrate Holding jig, 10... Board, 11... Partition pipe, 12...
Mekura board.
Claims (1)
有する気相エピタキシアル成長装置であつて、 複数の成長室は、同一円周上に配列され、気相
成長用ガスを供給するものであり、 基板保持治具は、基板を成長室からの気相成長
用ガス流を横切る方向に支持し、基板を角回転さ
せて該基板を各成長室の開口部に順次移送するも
のであり、 仕切管は、各成長室の外周を取り囲んで配管さ
れ、成長室内の原料ガスの流れ方向に沿つて気体
を供給する環状の流路であり、気体吹出口を有
し、 気体吹出口は、各成長室の開口縁に開口され、
仕切管からの気体を成長室の開口部に対面させた
基板のまわりに向けて吹出し、各成長室から流出
する気相成長用ガス流の相互間を隔離するエアー
カーテンを形成させるものであることを特徴とす
る気相エピタキシアル成長装置。[Claims for Utility Model Registration] A vapor phase epitaxial growth apparatus having a plurality of growth chambers, a substrate holding jig, and a partition tube, wherein the plurality of growth chambers are arranged on the same circumference and The substrate holding jig supports the substrate in a direction transverse to the vapor phase growth gas flow from the growth chamber, rotates the substrate angularly, and holds the substrate in the opening of each growth chamber. The partition pipe is an annular flow path that surrounds the outer periphery of each growth chamber and supplies gas along the flow direction of the raw material gas in the growth chamber. The gas outlet is opened at the opening edge of each growth chamber,
The gas from the partition pipe is blown out around the substrate facing the opening of the growth chamber to form an air curtain that isolates the vapor phase growth gas flows flowing out from each growth chamber. A vapor phase epitaxial growth device featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987182515U JPH0527503Y2 (en) | 1987-11-30 | 1987-11-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987182515U JPH0527503Y2 (en) | 1987-11-30 | 1987-11-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0187173U JPH0187173U (en) | 1989-06-08 |
| JPH0527503Y2 true JPH0527503Y2 (en) | 1993-07-13 |
Family
ID=31473962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987182515U Expired - Lifetime JPH0527503Y2 (en) | 1987-11-30 | 1987-11-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0527503Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4833150A (en) * | 1971-08-28 | 1973-05-08 | ||
| JPS57200291A (en) * | 1981-06-01 | 1982-12-08 | Fujitsu Ltd | Vapor-phase growing method of compound semiconductor |
-
1987
- 1987-11-30 JP JP1987182515U patent/JPH0527503Y2/ja not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4833150A (en) * | 1971-08-28 | 1973-05-08 | ||
| JPS57200291A (en) * | 1981-06-01 | 1982-12-08 | Fujitsu Ltd | Vapor-phase growing method of compound semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0187173U (en) | 1989-06-08 |
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