JPH0525228B2 - - Google Patents
Info
- Publication number
- JPH0525228B2 JPH0525228B2 JP58182871A JP18287183A JPH0525228B2 JP H0525228 B2 JPH0525228 B2 JP H0525228B2 JP 58182871 A JP58182871 A JP 58182871A JP 18287183 A JP18287183 A JP 18287183A JP H0525228 B2 JPH0525228 B2 JP H0525228B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor chip
- signal processing
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 95
- 238000003384 imaging method Methods 0.000 claims description 46
- 239000004020 conductor Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 6
- 230000008054 signal transmission Effects 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Instruments For Viewing The Inside Of Hollow Bodies (AREA)
- Endoscopes (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【発明の詳細な説明】
技術分野
本発明は固体撮像装置、特に体腔内部や機械的
構造体内部を観察するための内視鏡に内蔵して使
用するのに好適な固体撮像装置に関するものであ
る。Detailed Description of the Invention Technical Field The present invention relates to a solid-state imaging device, and particularly to a solid-state imaging device suitable for use built into an endoscope for observing the inside of a body cavity or a mechanical structure. .
従来技術
従来の内視鏡は、被検体内部に挿入される可撓
性外筒の内部にオプチカルフアイバ束より成るラ
イトガイドとイメージガイドとを延在させ、外部
に設けた照明光源から放射される光をライトガイ
ドを経て内視鏡先端まで導き、照明レンズ系を経
て被検体に照射し、被検体の像を対物レンズ系お
よびイメージガイドを経て外部へ導き、接眼レン
ズ系を介して直接観察するかまたは撮像装置で撮
像してモニタ上に表示するようにしている。この
ようなイメージガイドを用いた従来の内視鏡にお
ける分解能はイメージガイドを構成するフアイバ
の径できまるが、フアイバ径を現状よりもさらに
細くするには非常に困難であり、分解能はほぼ限
界に達している。また、イメージガイドは破損し
易いので耐久性の点でも問題がある。Prior Art In a conventional endoscope, a light guide and an image guide made of an optical fiber bundle extend inside a flexible outer tube that is inserted into a subject, and the light is emitted from an external illumination source. Light is guided through the light guide to the tip of the endoscope, illuminated on the subject through the illumination lens system, and the image of the subject is guided to the outside via the objective lens system and image guide, and directly observed through the eyepiece system. Alternatively, the image is captured by an imaging device and displayed on a monitor. The resolution of conventional endoscopes using such image guides is determined by the diameter of the fibers that make up the image guide, but it is extremely difficult to make the fiber diameter even thinner than it currently is, and the resolution is almost at its limit. has reached. Furthermore, since the image guide is easily damaged, there is also a problem in terms of durability.
このような問題を解決するために、内視鏡先端
に小形の撮像装置を組込み、これによつて被検体
像を撮像して画像信号に変換し、この画像信号を
導線を経て外部へ導き、モニタ上に被検体像を表
示することが提案されている。撮像装置として
は、CCD、BBD、MOS−FET ARRAY、PIN
−PHOTODIODE ARRAY、SIT ARRAYな
どの半導体固体撮像装置が開発されており、これ
らの固体撮像装置は小形でありながら分解能が高
く、しかも寿命が長いという特長を有しており、
内視鏡に内蔵するのに好適である。しかしなが
ら、現在製造されている固体撮像装置は従来の撮
像管に比べれば小形ではあるが、現状のままでは
内視鏡先端に内蔵することは困難である。特に体
腔内観察用の内視鏡は最も大径の直腸鏡でも直径
は十数ミリ程度であり、現状の固体撮像装置を組
込むことはできない。このような問題は内視鏡だ
けに限られるものではなく、他の撮像機器におい
ても生ずる可能性がある。 In order to solve these problems, a small imaging device is built into the tip of the endoscope, which captures an image of the subject, converts it into an image signal, and guides this image signal to the outside via a conductor. It has been proposed to display a subject image on a monitor. Imaging devices include CCD, BBD, MOS-FET ARRAY, PIN
-Semiconductor solid-state imaging devices such as PHOTODIODE ARRAY and SIT ARRAY have been developed, and these solid-state imaging devices are small, have high resolution, and have a long lifespan.
Suitable for being built into an endoscope. However, although currently manufactured solid-state imaging devices are smaller than conventional imaging tubes, it is difficult to incorporate them into the tip of an endoscope as is. In particular, endoscopes for observing inside body cavities, even the largest diameter rectoscope, have a diameter of about 10-odd millimeters, and cannot incorporate current solid-state imaging devices. Such problems are not limited to endoscopes, and may also occur in other imaging devices.
半導体固体撮像装置を構成する光検出半導体素
子からの検出信号は微弱であるので一般に素子単
独で用いられるより、検出信号を増幅する増幅回
路等を構成する信号処理回路素子と共に実装した
半導体撮像装置が多用されつつある。この場合、
光検出半導体素子と信号処理回路素子とを単一の
半導体チツプ内に構成する場合と、複数個の半導
体チツプ内に構成する場合とがある。第１図は従
来の固体撮像装置の一例の構成を示しものであ
り、第１図に示す例ではパツケージを構成するセ
ラミツク基板１上に１枚の半導体チツプ２を設
け、その左側の部分2LにCCD、BBD等の電荷転
送素子、MOSトランジスタ、フオトダイオード、
フオトトランジスタ、静電誘導トランジスタ等の
光検出半導体素子を形成し、右側の部分2Rには
水平、垂直シフトレジスタ、アドレスレジスタ、
各種の選択スイツチ、ビデオラインに接続された
負荷抵抗、コンデンサ、アンプ等を構成する信号
処理回路素子を形成する。この信号処理回路素子
を形成した部分2Rの上には遮光膜または遮光板
３が設けられており、透明ガラスキヤツプ４を経
て照射される光によつて半導体内に発生する電子
−正孔対に起因する微少電流による悪影響が信号
処理回路に及ぶことを防いでいる。 Since the detection signal from the photodetecting semiconductor element that constitutes a semiconductor solid-state imaging device is weak, it is generally preferable to use a semiconductor imaging device that is mounted with a signal processing circuit element that constitutes an amplifier circuit that amplifies the detection signal, rather than using the element alone. It is becoming widely used. in this case,
There are cases in which a photodetection semiconductor element and a signal processing circuit element are arranged in a single semiconductor chip, and cases in which they are arranged in a plurality of semiconductor chips. FIG. 1 shows the configuration of an example of a conventional solid-state imaging device. In the example shown in FIG. Charge transfer devices such as CCD and BBD, MOS transistors, photodiodes,
Photodetector semiconductor elements such as phototransistors and electrostatic induction transistors are formed, and the right part 2R has horizontal and vertical shift registers, address registers,
Signal processing circuit elements including various selection switches, load resistors connected to video lines, capacitors, amplifiers, etc. are formed. A light-shielding film or light-shielding plate 3 is provided on the portion 2R where the signal processing circuit element is formed, and the electron-hole pairs generated in the semiconductor by the light irradiated through the transparent glass cap 4 are This prevents the signal processing circuit from being adversely affected by the resulting minute current.
光検出半導体素子と信号処理回路素子との間で
の信号の授受は半導体領域または導体パターンを
介して行ない、信号処理半導体領域からの出力信
号や外部回路からの制御信号等の授受は、リード
５、セラミツク基板１に設けられたボンデイング
パツト６および導線７を介して行なわれている。
このような構成の固体撮像装置では光検出半導体
素子と信号処理回路素子とを単一の半導体チツプ
１内に形成できるので、これらを別々の半導体チ
ツプに形成する場合に比べて小形とすることがで
きるが、内視鏡の先端に内蔵することができる程
小形ではない。また、信号処理回路内の増幅回路
等で発生する熱が光検出半導体素子に伝達され、
暗電流が増大し、また光検出領域に入射した光に
よつて発生したキヤリア電荷が増幅回路やその周
辺回路に拡散し誤動作の原因となる。さらに大き
な問題点として光検出半導体素子と信号処理回路
素子とを単一の半導体チツプ上に構成するので、
特性およびチツプ製造プロセスの合わせ込みの困
難さに起因するコストアツプが生ずる。 Signals are exchanged between the photodetector semiconductor element and the signal processing circuit element via the semiconductor region or the conductor pattern, and output signals from the signal processing semiconductor region and control signals from the external circuit are exchanged through the lead 5. This is done via a bonding pad 6 provided on the ceramic substrate 1 and a conductive wire 7.
In a solid-state imaging device with such a configuration, the photodetector semiconductor element and the signal processing circuit element can be formed in a single semiconductor chip 1, so the size can be made smaller than when these are formed in separate semiconductor chips. However, it is not small enough to be built into the tip of an endoscope. In addition, heat generated in the amplifier circuit, etc. in the signal processing circuit is transferred to the photodetector semiconductor element,
Dark current increases, and carrier charges generated by light incident on the photodetection region diffuse into the amplifier circuit and its peripheral circuits, causing malfunctions. An even bigger problem is that the photodetector semiconductor element and the signal processing circuit element are constructed on a single semiconductor chip.
Increased costs arise due to difficulties in matching characteristics and chip manufacturing processes.
技術的背景
上述したような問題を解決するために、本願人
は特願昭58−46967号において第２図に示すよう
なバツク接合と呼ばれる実装方法を提案してい
る。第２図において、光検出半導体素子は上側の
半導体チツプ１１に形成し、信号処理回路素子は
下側の半導体チツプ１２に形成し、これらチツプ
は絶縁性のホルダー１３と一体に形成した隔壁１
４により離間されて支持されている。光検出半導
体素子と信号処理回路素子との間の信号の授受を
行なうために半導体チツプ１１および１２の表面
に形成した接点パツド１５および１６を導線１７
および１８を介してホルダ１３の表裏に設けた接
点パツド１９および２０にそれぞれ接続し、さら
にこれらの接点パツド１９と２０との間をホルダ
１３の側面に延在するリード２１により接続して
いる。さらに固体撮像装置を外部回路に接続する
ためのリード２２をホルダ１３から延在させてい
る。実際の固体撮像装置においては、第２図に示
す全体をさらにパツケージに収納しているが、第
２図ではパツケージは図示していない。Technical Background In order to solve the above-mentioned problems, the applicant has proposed a mounting method called back bonding as shown in FIG. 2 in Japanese Patent Application No. 58-46967. In FIG. 2, the photodetecting semiconductor element is formed on an upper semiconductor chip 11, the signal processing circuit element is formed on a lower semiconductor chip 12, and these chips are integrated with an insulating holder 13 into a partition wall 1.
4 and supported by. Contact pads 15 and 16 formed on the surfaces of semiconductor chips 11 and 12 are connected to conductive wires 17 to transmit and receive signals between the photodetecting semiconductor element and the signal processing circuit element.
and 18 to contact pads 19 and 20 provided on the front and back sides of the holder 13, respectively, and further, these contact pads 19 and 20 are connected by a lead 21 extending on the side surface of the holder 13. Furthermore, a lead 22 for connecting the solid-state imaging device to an external circuit is extended from the holder 13. In an actual solid-state imaging device, the entire structure shown in FIG. 2 is further housed in a package, but the package is not shown in FIG.
第２図に示したパツク接合構造では光検出半導
体素子を形成した半導体チツプ１１と信号処理回
路素子を形成した半導体チツプ１２とは別体とな
つていると共に隔壁１４を挟んで上下に重ねられ
ているため入射光側から見た面積は第１図に示し
た従来の固体撮像装置に比べて小さくなつている
と共に熱の影響やキヤリア電荷の拡散の問題は解
消されているが、そのままでは内視鏡先端に組込
むことは実際上不可能である。すなわち、内視鏡
の径は非常に小さく、固体撮像装置を組込むだけ
の十分なスペースが得られない。例えば体腔内観
察用の内視鏡では上述したライトガイドの他に標
本を採取するための鉗子およびこれを操作するた
めのワイヤが挿通されるようになつていると共
に、対物レンズ系の先頭レンズを洗浄するための
送水チユーブや、先頭レンズに付着した洗浄水を
吹き飛ばしたり体腔を膨らませたりする送気チユ
ーブなども挿通されており、固体撮像装置を内蔵
するために利用できるスペースは非常に狭くなつ
ている。したがつて高解像度の固体撮像装置を内
視鏡先端のようにきわめて狭い空間に組込むため
には固体撮像素子自体の構成を改良する必要があ
るが、光検出半導体チツプと信号処理半導体チツ
プとの結合と配置、両半導体チツプ間の信号ライ
ンの結合、パツケージの方法、リードの導出方法
など種々の困難な問題を解決しなければならな
い。 In the pack bonding structure shown in FIG. 2, the semiconductor chip 11 on which the photodetector semiconductor element is formed and the semiconductor chip 12 on which the signal processing circuit element is formed are separate bodies and are stacked one on top of the other with a partition wall 14 in between. As a result, the area seen from the incident light side is smaller than that of the conventional solid-state imaging device shown in Figure 1, and the problems of heat effects and carrier charge diffusion have been resolved. It is practically impossible to incorporate it into the tip of the mirror. That is, the diameter of the endoscope is very small, and there is not enough space to incorporate the solid-state imaging device. For example, in an endoscope for observing inside a body cavity, in addition to the above-mentioned light guide, forceps for collecting a sample and a wire for operating the forceps are inserted through the endoscope, and the leading lens of the objective lens system is inserted through the endoscope. A water supply tube for cleaning and an air supply tube for blowing off the cleaning water adhering to the leading lens and inflating the body cavity are also inserted, and the space available for housing the solid-state imaging device is extremely limited. There is. Therefore, in order to incorporate a high-resolution solid-state imaging device into an extremely narrow space such as the tip of an endoscope, it is necessary to improve the structure of the solid-state imaging device itself. Various difficult problems must be solved, such as bonding and placement, coupling of signal lines between both semiconductor chips, packaging methods, and lead extraction methods.
発明の目的
本発明の目的は、上述した従来の欠点を除去
し、小形に構成することができしかも実装密度を
向上して解像度を上げることができ、きわめて小
径の内視鏡先端にも組込むことができ、特に内視
鏡先端に組込むのに好適な固体撮像装置を提供し
ようとするものである。Purpose of the Invention The purpose of the present invention is to eliminate the above-mentioned conventional drawbacks, to be able to be configured in a compact size, to improve the packaging density and to increase the resolution, and to be able to be incorporated into the tip of an endoscope with an extremely small diameter. The present invention aims to provide a solid-state imaging device that is particularly suitable for being incorporated into the tip of an endoscope.
発明の概要
本発明の固体撮像装置は、
半導体撮像素子が形成された光検出半導体領域
および信号処理回路素子が形成された信号処理半
導体領域を互いに対向する面に一体的に形成した
半導体チツプと、
前記光検出半導体領域の表面に設けられた前記
半導体撮像素子に対する複数の第１の信号送受用
領域と、
前記信号処理半導体領域の表面に設けられた前
記信号処理回路素子に対する複数の第２の信号授
受用領域と、
前記半導体チツプの表面に金属蒸着によつて形
成され、前記第１の信号送受用領域と第２の信号
送受用領域とを電気的に接続する導体と、
前記第２の信号送受用領域と電気的に接続され
たリードとを具備したことを特徴とするものであ
る。Summary of the Invention A solid-state imaging device of the present invention includes a semiconductor chip in which a photodetecting semiconductor region in which a semiconductor imaging element is formed and a signal processing semiconductor region in which a signal processing circuit element is formed are integrally formed on mutually opposing surfaces; a plurality of first signal transmission/reception regions for the semiconductor image sensor provided on the surface of the photodetection semiconductor region; and a plurality of second signals for the signal processing circuit element provided on the surface of the signal processing semiconductor region. a conductor formed by metal vapor deposition on the surface of the semiconductor chip and electrically connecting the first signal transmitting and receiving region and the second signal transmitting and receiving region; and the second signal transmitting and receiving region. It is characterized by comprising a transmission/reception area and electrically connected leads.
実施例
以下、図面を参照して本発明を詳細に説明す
る。EXAMPLES Hereinafter, the present invention will be described in detail with reference to the drawings.
第３図は本発明の固体撮像装置の一実施例の構
成を示す線図である。本例では単一の半導体チツ
プ３１の表裏に光検出半導体領域３１ａと、信号
処理半導体領域３１ｂとを構成し、光検出半導体
領域３１ａにはCCD、BBD等の電荷結合半導体
素子、MOSトランジスタアレイ、ピンフオトダ
イオードアレイ、フオトトランジスタアレイ、静
電誘導トランジスタアレイなどの半導体撮像素子
を形成すると共に表面には絶縁膜を介してモザイ
ク状色フイルタ膜を形成するが、これら素子の各
領域や、絶縁膜、色フイルタ膜などの図示は省略
する。また、信号処理半導体領域３１ｂには水
平、垂直シフトレジスタ、増幅回路、スイツチな
どを構成する半導体素子や、負荷抵抗、コンデン
サなどの受動素子を形成するが、これらの図示も
省略する。本発明においては、光検出半導体領域
３１ａと信号処理半導体領域３１ｂとの間で信号
の授受を行なうために、これら領域の表面に形成
された領域３２および３３の間を半導体チツプ３
１の側面に金属の蒸着により形成した導体３４に
より接続する。また、半導体チツプ３１の裏面に
は固体撮像装置と外部回路との間で信号の授受を
行なうためのリード３５を固着する。本発明では
光検出半導体素子と信号処理回路素子との間の接
続を、半導体チツプ側面に被着した導体によつて
行なうことにより、固体撮像装置の入射光側から
見た寸法を小さくすることができる。また、半導
体チツプの裏面全体をリードの接続に利用するこ
とができるので多数のリードを容易に接続するこ
とができる。 FIG. 3 is a diagram showing the configuration of an embodiment of the solid-state imaging device of the present invention. In this example, a photodetection semiconductor region 31a and a signal processing semiconductor region 31b are formed on the front and back sides of a single semiconductor chip 31, and the photodetection semiconductor region 31a includes charge-coupled semiconductor devices such as CCDs and BBDs, MOS transistor arrays, etc. Semiconductor imaging devices such as pin-photo diode arrays, photo transistor arrays, and electrostatic induction transistor arrays are formed, and a mosaic color filter film is formed on the surface via an insulating film. , illustration of color filter films and the like is omitted. Further, although semiconductor elements constituting horizontal and vertical shift registers, amplifier circuits, switches, etc., and passive elements such as load resistors and capacitors are formed in the signal processing semiconductor region 31b, illustration thereof is also omitted. In the present invention, in order to transmit and receive signals between the photodetecting semiconductor region 31a and the signal processing semiconductor region 31b, the semiconductor chip 3 is inserted between the regions 32 and 33 formed on the surfaces of these regions.
It is connected by a conductor 34 formed on the side surface of 1 by metal vapor deposition. Furthermore, leads 35 are fixed to the back surface of the semiconductor chip 31 for transmitting and receiving signals between the solid-state imaging device and an external circuit. In the present invention, the connection between the photodetecting semiconductor element and the signal processing circuit element is made by a conductor attached to the side surface of the semiconductor chip, thereby making it possible to reduce the size of the solid-state imaging device when viewed from the incident light side. can. Furthermore, since the entire back surface of the semiconductor chip can be used for connecting leads, a large number of leads can be easily connected.
第４図は本発明の固体撮像装置の他の例を示す
線図的断面図である。本例では半導体チツプ４１
の領域４１ａ内に光検出半導体素子を形成し、半
導体チツプ４２の領域４２ａ内に信号処理回路素
子を形成する。これら半導体チツプ４１および４
２を適当な厚さの絶縁部材４３を挟んで入射光の
方向に見て前後に重ね合わせる。半導体チツプ４
１の所定の領域４４を、半導体チツプ４１，４２
および絶縁部材４３の側面に金属の蒸着により形
成した導体４５により半導体チツプ４２に形成し
た所定の領域４６に接続する。本例では光検出半
導体領域を形成した半導体チツプ４１と信号処理
回路を形成した半導体チツプ４２とを別個に構成
したため、回路の諸特性と半導体チツプ製造プロ
セスの合わせ込みが不要となり、熱やキヤリア電
荷による悪影響も除去できると共にリードを裏側
に設けたため光入射方向から見た横方向寸法を小
さくすることができ、しかも実装密度を向上する
ことができる。 FIG. 4 is a diagrammatic sectional view showing another example of the solid-state imaging device of the present invention. In this example, the semiconductor chip 41
A photodetecting semiconductor element is formed within the region 41a of the semiconductor chip 42, and a signal processing circuit element is formed within the region 42a of the semiconductor chip 42. These semiconductor chips 41 and 4
2 are stacked one on top of the other with an insulating member 43 of appropriate thickness in between, looking in the direction of the incident light. semiconductor chip 4
1 predetermined area 44 of semiconductor chips 41, 42.
A conductor 45 formed on the side surface of the insulating member 43 by metal vapor deposition is connected to a predetermined region 46 formed on the semiconductor chip 42 . In this example, the semiconductor chip 41 on which the photodetection semiconductor region is formed and the semiconductor chip 42 on which the signal processing circuit is formed are constructed separately, so there is no need to adjust the various characteristics of the circuit to the semiconductor chip manufacturing process, and there is no need to adjust the characteristics of the circuit to the semiconductor chip manufacturing process. In addition, since the leads are provided on the back side, the lateral dimension as viewed from the light incident direction can be reduced, and the packaging density can be improved.
さらに本例では半導体チツプ４２の裏面にリー
ドを直接ボンデイングせずに、半導体チツプ４２
の裏面に接点領域４７を設け、取付け基板４８に
取付けたリード４９の先端を接点領域に当接して
電気的に接続する。本例のようにリードを取付け
基板に取付け、この基板を半導体チツプ裏面に取
付けることによりリードの機械的強度が増大する
と共にリードの電気的接続を容易に行なうことが
できる。 Furthermore, in this example, the leads are not directly bonded to the back surface of the semiconductor chip 42;
A contact area 47 is provided on the back surface of the mounting board 48, and the tip of a lead 49 attached to the mounting board 48 is brought into contact with the contact area for electrical connection. By attaching the leads to a mounting board as in this example and attaching this board to the back surface of the semiconductor chip, the mechanical strength of the leads is increased and electrical connection of the leads can be easily made.
第５図は本発明の固体撮像装置のさらに他の例
を示す線図的斜視図である。本例では光検出半導
体素子を形成した半導体チツプ５１と信号処理回
路素子を形成した半導体チツプ５２とを前例と同
様に入射光の方向に見て前後に重ね合わせて配置
する。半導体チツプ５１と５２との間の接続はこ
れら半導体チツプの側面に金属蒸着して形成した
導体５３により行なう。本例では固体撮像装置と
外部回路との接続を行なうために、後側の半導体
チツプ５２に孔をあけ、この孔にリード線５４の
先端を挿入してハンダ付けする。第６図は半導体
チツプ５２とリード線５４との接続部分を拡大し
て示す断面図であり、半導体チツプ表面に所定の
領域５５中に孔５６をあけ、この孔にリード線５
４の導体芯５４ａを挿入し、領域５５と導体芯５
４ａとの間にはんだ５７により接続する。このよ
うな構成とすることによつて、リード線５４が半
導体チツプ５２の外方へはみ出すことがないの
で、入射光方向から見た寸法を小さくすることが
できると共に電気的な接続も簡単かつ確実に行な
うことができるのでトラブルの発生も少なくな
る。 FIG. 5 is a schematic perspective view showing still another example of the solid-state imaging device of the present invention. In this example, a semiconductor chip 51 on which a photodetecting semiconductor element is formed and a semiconductor chip 52 on which a signal processing circuit element is formed are placed one on top of the other when viewed in the direction of incident light, as in the previous example. Connection between semiconductor chips 51 and 52 is made by a conductor 53 formed by metal vapor deposition on the side surfaces of these semiconductor chips. In this example, in order to connect the solid-state imaging device to an external circuit, a hole is made in the rear semiconductor chip 52, and the tip of the lead wire 54 is inserted into the hole and soldered. FIG. 6 is an enlarged cross-sectional view showing the connecting portion between the semiconductor chip 52 and the lead wire 54. A hole 56 is formed in a predetermined area 55 on the surface of the semiconductor chip, and the lead wire 54 is inserted into the hole.
4 conductor core 54a is inserted, and the area 55 and conductor core 5
4a by solder 57. With this configuration, the lead wires 54 do not protrude outside the semiconductor chip 52, so the dimensions seen from the direction of incident light can be reduced, and electrical connections can be made easily and reliably. Since it can be done in a timely manner, there will be fewer troubles.
第７図は上述した本発明の固体撮像装置を先端
に内蔵した内視鏡の一例の構成を示す断面図であ
る。本例の内視鏡は直視形の体腔内観察用のもの
であり、被検体内部に挿入される可撓性外筒６１
の先端に、例えばステンレススチールより成る先
端本体６２を嵌着する。この先端本体６２には数
個のチヤンネル６２ａ，６２ｂ，６２ｃ……を形
成する。ライトガイドチヤンネル６２ａにはオブ
チカルフアイバ束より成るライトガイド６３を挿
入し、先端には凹レンズ６４を嵌合する。ライド
ガイド６３はカバーチユーブ６５により被覆し、
外筒６１の内部を延在させ、操作部へ導き照明光
源に結合する。対物観察チヤンネル６２ｂ内部に
は先端に対物レンズ系６６を嵌合すると共に内部
に固体撮像装置６７を嵌合する。本例の固体撮像
装置６７は第４図に示した構成のものであり、２
つの半導体チツプを上下に重ねたものである。後
側の半導体チツプの裏面に取付けたリード６８に
は導線束６９を接続し、この導線束６８は可撓性
チユーブ７０を経て外筒内部を延在させて操作部
へ導き、信号処理回路に接続する。送気チヤンネ
ル６２ｃには送気チユーブ７１を連結すると共に
先端には送気ノズル７２を取付け、対物レンズ系
６６の先頭レンズに向け、送気できるようにす
る。送水チヤンネルには送水チユーブを連結する
と共に先端には送水ノズルを設け、対物レンズ系
６６の先頭レンズに送水して汚物等を洗い流すこ
とができるようにするが、第７図では送水チユー
ブや送水ノズルは図示していない。また、送気ノ
ズル７２は先頭レンズに付着した洗浄水を吹き飛
ばすと共に必要に応じて被検体内部に送気してこ
れを膨ませることができるようにする。先端本体
６２にはさらに鉗子チヤンネルを形成し、ここに
は被検体標本を採取するための鉗子およびこの鉗
子を外部より操作するためのワイヤを挿通できる
ようにする。先端本体６２の外周面にはねじ溝を
形成し、ここに先端フード７３を螺合する。 FIG. 7 is a sectional view showing the configuration of an example of an endoscope incorporating the above-described solid-state imaging device of the present invention at its tip. The endoscope of this example is a direct-viewing type for observing inside body cavities, and has a flexible outer tube 61 inserted into the inside of the subject.
A tip main body 62 made of stainless steel, for example, is fitted onto the tip of the tip. Several channels 62a, 62b, 62c, . . . are formed in this tip body 62. A light guide 63 made of an optical fiber bundle is inserted into the light guide channel 62a, and a concave lens 64 is fitted at the tip. The ride guide 63 is covered with a cover tube 65,
The inside of the outer cylinder 61 is extended, guided to the operating section, and connected to the illumination light source. An objective lens system 66 is fitted at the tip inside the objective observation channel 62b, and a solid-state imaging device 67 is fitted inside. The solid-state imaging device 67 of this example has the configuration shown in FIG.
It consists of two semiconductor chips stacked one on top of the other. A conductive wire bundle 69 is connected to the lead 68 attached to the rear surface of the semiconductor chip on the rear side, and this conductive wire bundle 68 extends inside the outer cylinder through a flexible tube 70 and is guided to the operating section, and is connected to the signal processing circuit. Connecting. An air supply tube 71 is connected to the air supply channel 62c, and an air supply nozzle 72 is attached to the tip thereof, so that air can be supplied toward the leading lens of the objective lens system 66. A water supply tube is connected to the water supply channel, and a water supply nozzle is provided at the tip of the water supply channel so that water can be supplied to the first lens of the objective lens system 66 to wash away dirt, etc. In FIG. is not shown. Further, the air supply nozzle 72 blows away the cleaning water adhering to the leading lens and, if necessary, blows air into the inside of the subject to inflate it. A forceps channel is further formed in the tip body 62, through which forceps for collecting a specimen and a wire for operating the forceps from the outside can be inserted. A thread groove is formed on the outer circumferential surface of the tip body 62, into which a tip hood 73 is screwed.
本発明は上述した実施例にのみ限定されるもの
ではなく、幾多の変形例が可能である。例えば第
３図に示した実施例では半導体チツプの裏面に直
接リードを接続するようにしたが、第４図に示す
ようにリードを取付け基板に固着し、この取付け
基板を半導体チツプ裏面に固着することもでき
る。また、半導体チツプの側面に延在する導体は
半導体チツプの全側面に形成することもできる
が、少なくとも一つの側面には導体を形成しない
方が製造上有利である。さらに本発明の固体撮像
装置は第７図に示した直視形内視鏡だけでなく、
側視形の内視鏡にも組込むことができる。更に、
上述した内視鏡では、光源からの光をライトガイ
ドを経て外筒先端から射出させるようにしたが、
ライトガイドを用いることなく、ランプや発光ダ
イオード等の光源を外筒先端部に設けて被検体を
照明するよう構成することもできる。この場合、
赤、青、緑の３色の発光ダイオードを用い、これ
らを順次に発光させるようにすることもでき、こ
の場合には固体撮像装置の受光面に設けたカラー
フイルタは不要となる。さらに本発明の固体撮像
装置は内視鏡以外の撮像機器にも組込むことがで
きることは勿論である。 The present invention is not limited to the embodiments described above, and many modifications are possible. For example, in the embodiment shown in FIG. 3, the leads are connected directly to the back surface of the semiconductor chip, but as shown in FIG. 4, the leads are fixed to a mounting board, and this mounting board is fixed to the back surface of the semiconductor chip. You can also do that. Further, although the conductor extending to the side surface of the semiconductor chip can be formed on all the side surfaces of the semiconductor chip, it is advantageous in terms of manufacturing that the conductor is not formed on at least one side surface. Furthermore, the solid-state imaging device of the present invention is applicable not only to the direct-view endoscope shown in FIG.
It can also be incorporated into a side-viewing endoscope. Furthermore,
In the endoscope described above, the light from the light source passes through the light guide and is emitted from the tip of the outer cylinder.
It is also possible to provide a light source such as a lamp or a light emitting diode at the tip of the outer cylinder to illuminate the subject without using a light guide. in this case,
It is also possible to use light-emitting diodes of three colors, red, blue, and green, and make them emit light in sequence. In this case, a color filter provided on the light-receiving surface of the solid-state imaging device is not required. Furthermore, it goes without saying that the solid-state imaging device of the present invention can be incorporated into imaging equipment other than endoscopes.
発明の効果
本発明によれば、光検出半導体素子と信号処理
回路素子とを入射光の方向から見て前後に形成
し、これら光検出半導体素子と信号処理回路素子
との間を、半導体チツプの側面に金属蒸着によつ
て形成した導体によつて接続するようにしたた
め、入射光の方向から見た横方向の寸法を受光面
の寸法とほぼ同程度まで小さくすることができ、
例えば小径の内視鏡先端内部に有効に組込むこと
ができる。また、リードを半導体チツプの裏側に
取付けることによつても小形化に大きく貢献する
ことになると共に製造も容易となり、電気的特性
も良好となる効果がある。Effects of the Invention According to the present invention, a photodetection semiconductor element and a signal processing circuit element are formed in front and behind each other when viewed from the direction of incident light, and a semiconductor chip is formed between the photodetection semiconductor element and the signal processing circuit element. Since the connection is made by a conductor formed on the side surface by metal vapor deposition, the lateral dimension seen from the direction of the incident light can be reduced to almost the same size as the light receiving surface.
For example, it can be effectively incorporated inside the tip of a small-diameter endoscope. Furthermore, attaching the leads to the back side of the semiconductor chip greatly contributes to miniaturization, facilitates manufacturing, and improves electrical characteristics.
第１図は従来の固体撮像装置の一例の構成を示
す断面図、第２図は本願人が先に提案したバツク
接合形固体撮像装置の構成を示す断面図、第３図
は本発明の固体撮像装置の一例の構成を示す線
図、第４図は本発明の固体撮像装置の他の例の構
成を示す線図的断面図、第５図は本発明の固体撮
像装置のさらに他の例の構成を示す斜視図、第６
図は同じくその一部分を拡大して示す断面図、第
７図は本発明の固体撮像装置を先端内部に組込ん
だ内視鏡の一例を示す断面図である。
３１……半導体チツプ、３２，３３……領域、
３４……導体、３５……リード、４１，４２……
半導体チツプ、４３……絶縁部材、４４，４６，
４７……領域、４５……導体、４９……リード、
５１，５２……半導体チツプ、５３……導体、５
４……リード線、５５……領域、５６……孔、５
７……はんだ。
FIG. 1 is a sectional view showing the configuration of an example of a conventional solid-state imaging device, FIG. 2 is a sectional view showing the configuration of a back-junction solid-state imaging device previously proposed by the applicant, and FIG. 3 is a sectional view showing the configuration of an example of a conventional solid-state imaging device. FIG. 4 is a diagrammatic sectional view showing the configuration of another example of the solid-state imaging device of the present invention, and FIG. 5 is a diagram showing the configuration of another example of the solid-state imaging device of the present invention. A perspective view showing the configuration of the sixth
The same figure is a cross-sectional view showing a portion thereof enlarged, and FIG. 7 is a cross-sectional view showing an example of an endoscope in which the solid-state imaging device of the present invention is incorporated inside the distal end. 31... Semiconductor chip, 32, 33... Area,
34... Conductor, 35... Lead, 41, 42...
Semiconductor chip, 43... Insulating member, 44, 46,
47... area, 45... conductor, 49... lead,
51, 52...Semiconductor chip, 53...Conductor, 5
4... Lead wire, 55... Area, 56... Hole, 5
7...Solder.
Claims (1)
域および信号処理回路素子が形成された信号処理
半導体領域を互いに対向する面に一体的に形成し
た半導体チツプと、 前記光検出半導体領域の表面に設けられた前記
半導体撮像素子に対する複数の第１の信号送受用
領域と、 前記信号処理半導体領域の表面に設けられた前
記信号処理回路素子に対する複数の第２の信号授
受用領域と、 前記半導体チツプの表面に金属蒸着によつて形
成され、前記第１の信号送受用領域と第２の信号
送受用領域とを電気的に接続する導体と、 前記第２の信号送受用領域と電気的に接続され
たリードとを具備したことを特徴とする固体撮像
装置。[Scope of Claims] 1. A semiconductor chip in which a photodetection semiconductor region in which a semiconductor image sensor is formed and a signal processing semiconductor region in which a signal processing circuit element is formed are integrally formed on mutually opposing surfaces; and the photodetection semiconductor. a plurality of first signal transmission/reception areas for the semiconductor image sensor provided on the surface of the area; and a plurality of second signal transmission/reception areas for the signal processing circuit element provided on the surface of the signal processing semiconductor area. , a conductor formed on the surface of the semiconductor chip by metal vapor deposition and electrically connecting the first signal transmission and reception area and the second signal transmission and reception area; and the second signal transmission and reception area. A solid-state imaging device characterized by comprising electrically connected leads.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58182871A JPS6074880A (en) | 1983-09-30 | 1983-09-30 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58182871A JPS6074880A (en) | 1983-09-30 | 1983-09-30 | Solid-state image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074880A JPS6074880A (en) | 1985-04-27 |
| JPH0525228B2 true JPH0525228B2 (en) | 1993-04-12 |
Family
ID=16125885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58182871A Granted JPS6074880A (en) | 1983-09-30 | 1983-09-30 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074880A (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0532811Y2 (en) * | 1985-10-03 | 1993-08-23 | ||
| JP2607542B2 (en) * | 1987-01-20 | 1997-05-07 | オリンパス光学工業株式会社 | Solid-state imaging device |
| US20110034769A1 (en) | 1997-10-06 | 2011-02-10 | Micro-Imaging Solutions Llc | Reduced area imaging device incorporated within wireless endoscopic devices |
| GB9928025D0 (en) * | 1999-11-27 | 2000-01-26 | Vlsi Vision Ltd | Improvements in or relating to image sensor devices and endoscopes incorporationg improved image sensor devices |
| JP4698877B2 (en) * | 2001-04-27 | 2011-06-08 | オリンパス株式会社 | Imaging device |
| EP1773178B1 (en) * | 2004-07-19 | 2009-03-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Video endoscopy device |
| WO2006080359A1 (en) * | 2005-01-26 | 2006-08-03 | Matsushita Electric Industrial Co., Ltd. | Image pickup device |
| EP3369360A4 (en) * | 2015-10-27 | 2019-06-05 | Olympus Corporation | Image pickup unit and endoscope |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143676A (en) * | 1982-02-20 | 1983-08-26 | Ricoh Co Ltd | Memory for image pickup device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5714466Y2 (en) * | 1975-11-18 | 1982-03-25 | ||
| JPS54162765U (en) * | 1978-05-06 | 1979-11-14 |
-
1983
- 1983-09-30 JP JP58182871A patent/JPS6074880A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58143676A (en) * | 1982-02-20 | 1983-08-26 | Ricoh Co Ltd | Memory for image pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074880A (en) | 1985-04-27 |
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