JPH05251824A - Manufacture of semiconductor laser - Google Patents
Manufacture of semiconductor laserInfo
- Publication number
- JPH05251824A JPH05251824A JP4046975A JP4697592A JPH05251824A JP H05251824 A JPH05251824 A JP H05251824A JP 4046975 A JP4046975 A JP 4046975A JP 4697592 A JP4697592 A JP 4697592A JP H05251824 A JPH05251824 A JP H05251824A
- Authority
- JP
- Japan
- Prior art keywords
- bar
- mask
- electrode
- semiconductor laser
- bars
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体レーザ、特に光
ディスク用、第２高調波発生用、固体レーザ励起用、レ
ーザビームプリンタ用、光ファイバ増幅器励起用、光通
信用、レーザ加工用、レーザ治療用なとせに用いられる
高出力半導体レーザの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser, particularly for an optical disk, for generating a second harmonic, for exciting a solid-state laser, for a laser beam printer, for exciting an optical fiber amplifier, for optical communication, for laser processing, and for a laser. The present invention relates to a method for manufacturing a high-power semiconductor laser used for therapeutic purposes.
【０００２】[0002]
【従来の技術】近年、小型、高効率、低価格といった利
点を有する半導体レーザの実用化によって、従来レーザ
光源の使用が困難であった一般産業機器、民生機器への
レーザ応用が進展している。このような多くの利点を有
する半導体レーザをさらに高出力動作可能とすることに
より、光ディスクの高速化、第２高調波あるいは固体レ
ーザ光の効率的発生、レーザビームプリンタの高速化、
光ファイバアンプを用いた光通信システムにおける中継
距離の延長あるいは伝送速度の高速化、レーザ加工機あ
るいはレーザ治療機の大幅な小型化などの用途が期待さ
れている。2. Description of the Related Art In recent years, the practical application of semiconductor lasers having advantages such as small size, high efficiency, and low price has led to the advancement of laser application to general industrial equipment and consumer equipment where it has been difficult to use a laser light source. .. By enabling the semiconductor laser having many advantages as described above to operate at higher output, the speed of the optical disk is increased, the second harmonic or solid-state laser light is efficiently generated, the speed of the laser beam printer is increased,
It is expected to be used for extending the relay distance or increasing the transmission speed in an optical communication system using an optical fiber amplifier, and for significantly reducing the size of a laser processing machine or a laser therapy machine.
【０００３】しかし、半導体レーザの高出力動作時に
は、出射端面がその強い光密度のために破壊されてしま
うという問題点を有していた。この点を克服するため
に、以下の方法が効果があることが知られている。However, when the semiconductor laser is operated at a high output, there is a problem that the emitting end face is destroyed due to its high light density. The following methods are known to be effective for overcoming this point.
【０００４】 導波ストライプ幅を広げることによっ
て端面の光密度を減少させる。By increasing the width of the waveguide stripe, the light density at the end face is reduced.
【０００５】 導波ストライプ幅に垂直な方向の光の
広がりを大きくすることによって端面の光密度を減少さ
せる。By increasing the spread of light in the direction perpendicular to the waveguide stripe width, the light density at the end face is reduced.
【０００６】 端面近傍に電流非注入領域を設ける。A current non-injection region is provided near the end face.
【０００７】 端面近傍に、内部の半導体結晶に対し
て格子整合し、活性層よりもバンドギャップの広い半導
体層を設けることにより、端面に生じている界面準位を
除去し、端面を光非吸収層とする。By providing a semiconductor layer in the vicinity of the end face that is lattice-matched to the internal semiconductor crystal and has a bandgap wider than that of the active layer, the interface state generated at the end face is removed and the end face is not absorbed by light. Layer.
【０００８】これらの対策のいくつかを組み合わせるこ
とにより、より一層の高出力化を図ることができる。By combining some of these measures, a higher output can be achieved.
【０００９】この中のに当たる対策のうち、一旦光出
射面（端面）を劈開あるいはエッチングによって形成
し、その面上にごく薄く光非吸収層（以後窓層と呼ぶ）
を形成する方法は、内部の導波光が出射面で反射されて
再び導波路に結合する際の窓層での光拡散による損失が
ほとんどないため、効率が窓層のない場合に対してほと
んど悪化しないという利点を有している。Among these measures, the light emitting surface (end surface) is once formed by cleavage or etching, and a very thin light non-absorptive layer (hereinafter referred to as window layer) is formed on the surface.
In the method of forming, there is almost no loss due to light diffusion in the window layer when the guided light inside is reflected on the exit surface and is coupled to the waveguide again, so the efficiency is almost worse than when there is no window layer. It has the advantage of not doing it.
【００１０】[0010]
【発明が解決しようとする課題】端面に窓層を成長させ
る場合、結晶成長装置の汚染を防止するため、一般には
電極形成前に窓層成長を行う。ところが窓層を形成する
前に、光出射端面を露出させるため、先に劈開をしてウ
エハをバー状に分割する必要がある。そのためウエハ単
位でなく、数がウエハ状態に比べて数十〜数百倍に増え
たバー状態で電極形成を行う必要がある。しかも、バー
は幅が例えば４００μｍと非常に細いためハンドリング
が厄介であり、さらにその細いバー幅ぎりぎり一杯に電
極を形成せねばならず、しかも電極が端面に回り込むこ
とは許されない。そしてこの電極形成工程は表面・裏面
それぞれについて少なくとも各１回、通常各２回必要で
ある。When the window layer is grown on the end face, the window layer is generally grown before the electrode formation in order to prevent contamination of the crystal growth apparatus. However, before forming the window layer, in order to expose the light emitting end face, it is necessary to cleave the wafer to divide it into bars. Therefore, it is necessary to perform electrode formation not in a wafer unit but in a bar state in which the number is increased by several tens to several hundreds as compared with the wafer state. Moreover, since the bar has a very narrow width of 400 μm, for example, it is difficult to handle, and the electrode must be formed so as to fill the width of the thin bar, and the electrode is not allowed to go around the end face. This electrode forming step is required at least once each on the front surface and the back surface, and usually twice each.
【００１１】バーに電極を形成する方法によってｐ型Ｇ
ａＡｓ基板を用いた半導体レーザに電極を形成する手順
を以下に示す。図１０（ａ）に示すように、バーの両端
を支持するための溝を形成したホルダー９０１にバー２
を成長面が上になる様に挿入し、その上に図１０（ｂ）
に示すようにバー幅よりも狭い開口部を有するマスク９
０２を置き、ホルダー９０１とマスク９０２を動かない
ように固定する。この状態のまま、真空蒸着機内にマス
ク１０２の開口部を下（蒸着源側）にして置き、ＡｕＧ
ｅ／Ｎｉ表面（成長面）電極４０を真空蒸着により形成
する。マスク９０２・ホルダー９０１を取り出して両者
を分離し、バーの上下を反転して再びホルダー９０１へ
挿入・マスク９０２を固定後、ＡｕＺｎ裏面電極４２を
真空蒸着する。その後でバーを蒸着機・ホルダー９０１
から取り出し、熱処理炉で１０分間４５０℃に加熱す
る。再びホルダー９０１上にバー２を成長面が上になる
ように置いてマスク９０２を固定し、蒸着機にセットし
て、Ｍｏ／Ａｕ表面電極４４を真空蒸着する。再びホル
ダー９０１内のバーの上下を反転した後、Ａｌ裏面電極
４６を真空蒸着する。この様にして、バーの両端面近傍
以外の表面・裏面に電極を形成する。Depending on the method of forming electrodes on the bar, p-type G
The procedure for forming electrodes on a semiconductor laser using an aAs substrate will be described below. As shown in FIG. 10A, the bar 2 is attached to the holder 901 having grooves for supporting both ends of the bar.
Is inserted so that the growth surface is on top, and FIG.
Mask 9 having an opening narrower than the bar width as shown in FIG.
02, and the holder 901 and the mask 902 are fixed so as not to move. In this state, the mask 102 is placed with the opening of the mask 102 facing downward (on the side of the vapor deposition source) and AuG
An e / Ni surface (growth surface) electrode 40 is formed by vacuum evaporation. The mask 902 and the holder 901 are taken out and separated from each other, the bar is turned upside down, and the bar is turned upside down and inserted again into the holder 901. After fixing the mask 902, the AuZn rear surface electrode 42 is vacuum deposited. After that, the bar is vapor deposition machine holder 901.
Then, it is heated at 450 ° C. for 10 minutes in a heat treatment furnace. The bar 2 is again placed on the holder 901 so that the growth surface faces upward, the mask 902 is fixed, and the mask / 902 is set on the vapor deposition machine to vacuum-deposit the Mo / Au surface electrode 44. After reversing the top and bottom of the bar in the holder 901 again, the Al back surface electrode 46 is vacuum-deposited. In this way, electrodes are formed on the front and back surfaces of the bar other than the vicinity of both end surfaces.
【００１２】このようにバー状態での電極形成は非常に
繁雑であるため、劈開面に窓層成長を行った高出力半導
体レーザは高性能ではあるが非常に高価なものとなり、
普及の大きな妨げとなっていた。As described above, since the electrode formation in the bar state is very complicated, the high-power semiconductor laser in which the window layer is grown on the cleavage plane has high performance but is very expensive.
It was a big obstacle to the spread.
【００１３】[0013]
【課題を解決するための手段】本発明では、以上の問題
点を解決するため、表面および裏面の電極蒸着部に対応
する開口部、およびバーと開口部との位置ずれを防止す
る支持部を設けた治具にバーを固定し、その状態で表面
および裏面の電極形成、および必要に応じて熱処理を行
い、電極形成工程終了後に治具から各バーを取り出す。According to the present invention, in order to solve the above problems, an opening portion corresponding to the electrode deposition portion on the front surface and the back surface, and a support portion for preventing the positional deviation between the bar and the opening portion are provided. The bar is fixed to the jig provided, and in that state, the electrodes on the front surface and the back surface are formed, and heat treatment is performed if necessary, and each bar is taken out from the jig after the electrode forming step is completed.
【００１４】[0014]
【作用】本発明によれば、バーに電極を形成する際、多
数のバーを両面に開口部を有する治具に固定するため、
治具全体をあたかもウエハの様に取り扱うことができ
る。そのため全電極形成工程における工程数のウエハプ
ロセスに対する増加は、最初にバーを治具に挿入・固定
する工程と、最後に治具からバーを取り出す工程だけに
なり、各電極工程間にバーを１本ずつ取り扱って電極形
成を行う場合に比べて繁雑さが大幅に減少する。According to the present invention, when an electrode is formed on a bar, a large number of bars are fixed to a jig having openings on both sides.
The entire jig can be handled as if it were a wafer. Therefore, the increase in the number of steps in the total electrode formation step with respect to the wafer process is only the step of first inserting and fixing the bar in the jig and the step of finally taking out the bar from the jig, and the bar is reduced between the electrode steps. The complexity is greatly reduced as compared with the case where the electrodes are formed by handling each book.
【００１５】[0015]
【実施例】以下、実施例に基づいて本発明を詳細に説明
する。EXAMPLES The present invention will be described in detail below based on examples.
【００１６】・実施例１ まず、半導体レーザ内部構造成長済ウエハ１を作製し
（詳細は後述）、厚さ１００μｍにラッピングする。次
に、このウエハをストライプ（レーザ発振導波路）と垂
直方向に劈開して幅４００μｍ・長さ１２ｍｍのバー２
に分割し、レーザ構造成長面（表面）が上になるように
適当な間隔をおいて並べ、有機金属気相成長法（ＭＯＣ
ＶＤ法）によって高抵抗Ａｌ0・5Ｇａ0・5Ａｓ層３０Ａお
よび３０Ｂをそれぞれ前端面および後端面に０．２μｍ
成長する。次にバーの前端面にＡｌ 2Ｏ3反射防止膜３
２、後端面にＡｌ2Ｏ3／Ｓｉ／Ａｌ2Ｏ3／Ｓｉ／Ａｌ2
Ｏ3高反射率反射膜３４を真空蒸着法によって形成す
る。この段階のバーの斜視図を図２に示す（内部構造は
活性層１６以外図示せず）。Example 1 First, a wafer 1 on which a semiconductor laser internal structure has been grown is prepared.
(Details will be described later), and lapping is performed to a thickness of 100 μm. Next
This wafer is then hung with a stripe (laser oscillation waveguide).
Bar 2 with a width of 400 μm and a length of 12 mm that is cleaved in the vertical direction
The laser structure so that the growth surface (surface) is on top
Aligned at appropriate intervals, metalorganic vapor phase epitaxy (MOC
High resistance Al by VD method)0.5Ga0.5As layer 30A
And 30B are 0.2 μm on the front end face and the rear end face, respectively.
grow up. Next, on the front end surface of the bar, Al 2O3Antireflection film 3
2, Al on the rear end surface2O3/ Si / Al2O3/ Si / Al2
O3The high reflectance reflective film 34 is formed by a vacuum deposition method.
It A perspective view of the bar at this stage is shown in FIG. 2 (the internal structure is
Other than the active layer 16, not shown).
【００１７】この後で、図１に示すように、電極形成部
に対応した幅３８０μｍ・長さ１０ｍｍの窓を開けた金
属製マスク９１と、バー２の両端を支持する長さ１２．
２ｍｍ×幅〔４１０μｍ（両側１ｍｍづつ）−１０００
μｍ（中間１０．２ｍｍ）〕の溝を有する金属製マスク
９３を位置合わせ・仮固定し、マスク９３の溝にバー２
を成長面が下になるように置き、電極形成部に対応した
幅３８０μｍ・長さ１０ｍｍの窓を開けた金属製マスク
９２をマスク９１・９３に位置合わせして置き、ビス９
５・ナット９６・ワッシャー９７によって３つのマスク
を固定する。この状態をマスクセットと呼ぶことにす
る。After this, as shown in FIG. 1, a metal mask 91 having a window of 380 μm in width and 10 mm in length corresponding to the electrode forming portion, and a length 12. for supporting both ends of the bar 2.
2 mm x width [410 μm (1 mm on each side) -1000
The metal mask 93 having a groove of μm (intermediate 10.2 mm) is aligned and temporarily fixed, and the bar 2 is inserted into the groove of the mask 93.
Is placed so that the growth surface faces downward, and a metal mask 92 having a window of 380 μm in width and 10 mm in length corresponding to the electrode forming portion is placed in alignment with the masks 91 and 93.
5. Fix the three masks with 5 nuts 96 and washers 97. This state will be called a mask set.
【００１８】マスク９１が下になるようにマスクセット
をベルジャー内に置き、表面（成長面）電極ＡｕＧｅ／
Ｎｉ４０を真空蒸着により形成する。マスクセットの上
下を反転して再びベルジャー内に置き、裏面電極ＡｕＺ
ｎ４２を真空蒸着する。その後でマスクセットごとバー
を熱処理炉に入れ、１０分間４５０℃に加熱する。さら
にマスクセットをマスク９１が下になるように置き、表
面電極Ｍｏ／Ａｕ４４を真空蒸着する。マスクセットの
上下を反転して、裏面電極Ａｌ４６を真空蒸着する。The mask set is placed in a bell jar with the mask 91 facing down, and the surface (growth surface) electrode AuGe /
Ni40 is formed by vacuum evaporation. Turn the mask set upside down and place it in the bell jar again, then back electrode AuZ
n42 is vacuum deposited. After that, the mask set and the bar are placed in a heat treatment furnace and heated at 450 ° C. for 10 minutes. Further, the mask set is placed with the mask 91 facing down, and the surface electrode Mo / Au 44 is vacuum-deposited. The top and bottom of the mask set are turned upside down, and the back electrode Al 46 is vacuum-deposited.
【００１９】ビス９５・ナット９６・ワッシャー９７を
外してマスク９２を外し、各バー２を取り出す。バーを
チップに分割し、チップを成長面が下になるようにステ
ムにダイボンドし、裏面にリード線をワイヤボンドす
る。その後、窒素雰囲気中でウインド付キャップをシー
ルする。The screws 95, nuts 96 and washers 97 are removed, the mask 92 is removed, and each bar 2 is taken out. The bar is divided into chips, the chips are die-bonded to the stem with the growth side down, and the leads are wire-bonded to the backside. Then, the window cap is sealed in a nitrogen atmosphere.
【００２０】なおマスク９１・９２・９３はステンレス
製、厚さは１００μｍとした。マスク９１・９３は一旦
圧着したあとは分解・再位置合わせする事なく再利用で
きる。マスク９１・９３は圧着でなくネジ止めで固定し
てもよい。この説明ではマスク９１を表面電極用とした
が、これを裏面電極用とし、裏面を下にしてバー２をマ
スク９３に挿入してもよい。The masks 91, 92 and 93 are made of stainless steel and have a thickness of 100 μm. The masks 91 and 93 can be reused without being disassembled and realigned after being pressure bonded. The masks 91 and 93 may be fixed by screws instead of pressure bonding. Although the mask 91 is used for the front surface electrode in this description, it may be used for the back surface electrode and the bar 2 may be inserted into the mask 93 with the back surface facing down.
【００２１】本実施例では、反射膜形成後に電極形成す
るものとして説明したが、逆に電極形成後に反射膜形成
としもよい。反射膜は前面と後面とで同一構成としもよ
い。さらに本窓構造では端面の劣化が十分抑えられてい
るので、反射膜を設けなくても素子は長期に渡って十分
安定に動作する。In this embodiment, the electrode is formed after the reflective film is formed, but conversely, the reflective film may be formed after the electrode is formed. The reflective film may have the same structure on the front surface and the rear surface. Further, since the end face deterioration is sufficiently suppressed in this window structure, the element can operate sufficiently stably for a long period of time without providing a reflective film.
【００２２】本実施例において、３枚のマスクの位置合
わせが完全な場合、バーの端面付近１０μｍ±５μｍの
領域が電極非形成部となる。この程度の幅の非形成部に
よっては素子抵抗および電流−光出力特性は電極非形成
部がない場合に比べてほとんど変わらない。In the present embodiment, when the alignment of the three masks is perfect, the area of 10 μm ± 5 μm near the end face of the bar becomes the electrode non-forming portion. The element resistance and the current-light output characteristics of the non-formed portion having such a width are almost the same as those in the case where the electrode non-formed portion is not formed.
【００２３】図３は、本実施例によって、作製された半
導体レーザチップの断面図である。ｐ型ＧａＡｓ基板１
０上にｎ型電流ブロックＧａＡｓ層１２を成長し、エッ
チングによって基板１０に達するＶ溝を形成する。その
上にｐ型Ａｌ0・45Ｇａ0・55Ａ第１クラッド層１４、アン
ドープＡｌ0・15Ｇａ0・85Ａｓ活性層１６、ｎ型Ａｌ0・45
Ｇａ0・55Ａｓ第２クラッド層１８、ｎ型ＧａＡｓキャッ
プ層２０をＬＰＥ法によって成長した。FIG. 3 is a sectional view of a semiconductor laser chip manufactured according to this embodiment. p-type GaAs substrate 1
An n-type current block GaAs layer 12 is grown on the substrate 0, and a V groove reaching the substrate 10 is formed by etching. A p-type Al 0 .45 Ga 0 .55 A first cladding layer 14, an undoped Al 0 .15 Ga 0 .85 As active layer 16, and an n type Al 0 .45
The Ga 0 · 55 As second cladding layer 18, n-type GaAs cap layer 20 was grown by LPE method.
【００２４】この半導体レーザは波長７８０ｎｍで発振
し、閾値電流は７０ｍＡ、最大光出力は約３２０ｍＷで
あった。This semiconductor laser oscillated at a wavelength of 780 nm, the threshold current was 70 mA, and the maximum optical output was about 320 mW.
【００２５】・実施例２ 実施例２では、波長６７０ｎｍで発振するＩｎＧａＡｌ
Ｐ系ブロードエリアレーザの製造に本発明を適用した。Example 2 In Example 2, InGaAl oscillating at a wavelength of 670 nm
The present invention was applied to the manufacture of P-based broad area lasers.
【００２６】ｎ型ＧａＡｓ基板１１０に後述する半導体
レーザ内部構造を形成し、ウエハを厚さ１００μｍにラ
ッピングした後、幅４００μｍのバー状に劈開し、バー
の成長面が下になるように並べ、端面にＩｎ0・5（Ｇａ
0・8Ａｌ0・2）0・5Ｐ層１３０をＭＯＣＶＤ法により形成
する。An internal structure of a semiconductor laser, which will be described later, is formed on an n-type GaAs substrate 110, the wafer is lapped to a thickness of 100 μm, and then cleaved into bars having a width of 400 μm. an in 0 · 5 to the end surface (Ga
The 0 · 8 Al 0 · 2) 0 · 5 P layer 130 is formed by MOCVD.
【００２７】このバーをマスク１９１・１９２に挿入す
る。図４（ａ）にマスク１９１・１９２にバーを挿入し
た内部の断面が分かるようにした位置関係説明図、図４
（ｂ）にマスク１９１の斜視図（手前は断面）を示す。
マスク１９２も１９１と同じ構造である。このようにマ
スク１９１・１９２はバー挿入側が外側に比べて広い非
対称な断面となっており、このためマスク１９１・１９
２の周辺部でバーを固定することができる。マスク１９
１・１９２はどちらも厚さは１００μｍ、外側からの開
口部が幅３８０μｍ・長さ１０ｍｍ、バー挿入側からの
開口部は長さ１２．２ｍｍ・幅４１０μｍ（両端１ｍｍ
づつ）−幅６００μｍ（中間部）である。マスク１９１
にバーを挿入し、マスク１９２をかぶせ、さらに図４
（ａ）に示すサイドクリップ１９７で固定する。This bar is inserted into the masks 191 and 192. FIG. 4 (a) is an explanatory view of the positional relationship in which the internal cross section of the bar inserted into the masks 191 and 192 can be seen.
A perspective view (front side is a cross section) of the mask 191 is shown in (b).
The mask 192 also has the same structure as 191. As described above, the masks 191 and 192 have an asymmetric cross section in which the bar insertion side is wider than the outside, and therefore the masks 191 and 192 are formed.
The bar can be fixed at the periphery of 2. Mask 19
Both 1 and 192 have a thickness of 100 μm, the opening from the outside is 380 μm wide and 10 mm long, and the opening from the bar insertion side is 12.2 mm long and 410 μm wide (1 mm at both ends).
Each) -width 600 μm (middle part). Mask 191
Insert the bar into the box, cover with the mask 192, and then in FIG.
The side clip 197 shown in FIG.
【００２８】以上のようにしてバーをセットしたマスク
セットをスパッタ装置内に成長面が下になるように置
き、成長面にＡｕＺｎ電極１４１をスパッタで形成し、
マスクセットを反転して裏面にＡｕＧｅ／Ｎｉ電極１４
３をスパッタで形成する。その後マスクセットごと４５
０℃１０分熱処理する。再びマスクセットをスパッタ装
置内に成長面が下になるように置き、成長面にＭｏ／Ａ
ｕ電極１４４をスパッタで形成し、マスクセットを反転
して裏面にＡｌ電極１４６をスパッタで形成する。なお
各スパッタにおいてターゲットは下置きとした。これを
上置きとしてもよいが、その場合はスパッタを行う面が
上になる様にマスクセットをスパッタ装置内に置く必要
がある。The mask set with the bar set as described above is placed in the sputtering apparatus so that the growth surface faces downward, and the AuZn electrode 141 is formed on the growth surface by sputtering.
Reverse the mask set and place the AuGe / Ni electrode 14 on the back surface.
3 is formed by sputtering. Then every mask set 45
Heat treatment at 0 ° C. for 10 minutes. The mask set is placed again in the sputtering apparatus with the growth surface facing down, and the growth surface is covered with Mo / A.
The u electrode 144 is formed by sputtering, the mask set is reversed, and the Al electrode 146 is formed on the back surface by sputtering. The target was placed under each sputter. This may be placed on top, but in that case, it is necessary to place the mask set in the sputtering apparatus so that the surface on which sputtering is performed faces upward.
【００２９】以上の後マスクセットのサイドクリップ１
９７を外して各バーを取り出す。Side clip 1 of the rear mask set described above
Remove 97 and take out each bar.
【００３０】バーを端面が揃うように並べ、前端面にＳ
ｉＯ2反射防止膜１３２、後端面にＳｉＯ2／ＴｉＯ2／
ＳｉＯ2／ＴｉＯ2／ＳｉＯ2高反射率膜１３４をそれぞ
れ形成する。その後各チップに分割しパッケージングす
る。Arrange the bars so that the end faces are aligned, and place S on the front end face.
iO 2 anti-reflection film 132, SiO on the rear end surface 2 / TiO 2 /
The SiO 2 / TiO 2 / SiO 2 high reflectance film 134 is formed, respectively. After that, it is divided into each chip and packaged.
【００３１】半導体レーザ内部の断面図を図５に示す。
ｎ型ＧａＡｓ基板１１０にＭＯＣＶＤ法によって、ｎ型
Ｉｎ0・5Ａｌ0・5Ｐクラッド層１１２、アンドープＩｎ
0・5Ｇａ0・5Ｐ活性層１１４、ｐ型Ｉｎ0・5Ａｌ0・5Ｐクラ
ッド層１１６、ｐ型ＧａＡｓキャップ層１１８を形成す
る。続いて成長面全体にＳｉ3Ｎ4膜１２０をＣＶＤ法で
形成し、幅２００μｍのストライプ状に除去する。A sectional view of the inside of the semiconductor laser is shown in FIG.
by the MOCVD method the n-type GaAs substrate 110, n-type In 0 · 5 Al 0 · 5 P cladding layer 112, an undoped In
0 · 5 to form a Ga 0 · 5 P active layer 114, p-type an In 0 · 5 Al 0 · 5 P cladding layer 116, p-type GaAs cap layer 118. Subsequently, a Si 3 N 4 film 120 is formed on the entire growth surface by a CVD method and removed in a stripe shape having a width of 200 μm.
【００３２】本素子は、波長６７０ｎｍで発振し、最大
光出力は８８０ｍＷが得られた。The device oscillated at a wavelength of 670 nm, and the maximum optical output was 880 mW.
【００３３】・実施例３ 実施例３は基板にＩｎＰを用いた長波長レーザに本発明
を適用した例である。内部半導体レーザの断面を図６に
示す。ｎ型ＩｎＰ基板２１０上にｎ型ＩｎＰクラッド層
２１２、アンドープＩｎ0・84Ｇａ0・16Ａｓ0・33Ｐ0・67活
性層２１４、ｐ型ＩｎＰクラッド層２１６をＭＯＣＶＤ
法により形成し、ストライプ領域以外をエッチングで除
去し、さらにＭＯＣＶＤ法によってＰ型ＩｎＰ層２１
８、ｎ型ＩｎＰ層２２０でストライプ周囲を埋め込んだ
構造をしている。このエピ済ウエハを劈開し、バーの端
面および成長面上に高抵抗ＩｎＰ層２３０をＭＯＣＶＤ
法によって形成する。続いて前端面にＡｌ2Ｏ3保護膜２
３２、後端面にＡｌ2Ｏ3／Ｓｉ／Ａｌ2Ｏ3反射膜２３４
を形成する。Example 3 Example 3 is an example in which the present invention is applied to a long wavelength laser using InP for a substrate. A cross section of the internal semiconductor laser is shown in FIG. On the n-type InP substrate 210, an n-type InP clad layer 212, an undoped In 0 .84 Ga 0 .16 As 0 .33 P 0 .67 active layer 214 and a p-type InP clad layer 216 are MOCVD-formed.
Formed by etching, the portions other than the stripe region are removed by etching, and the P-type InP layer 21 is further formed by MOCVD.
8. The structure is such that the periphery of the stripe is filled with the n-type InP layer 220. This epi-wafer is cleaved to MOCVD a high resistance InP layer 230 on the end and growth surfaces of the bar.
Form by the method. Subsequently, the Al 2 O 3 protective film 2 is formed on the front end face.
32, Al 2 O 3 / Si / Al 2 O 3 reflective film 234 on the rear end face
To form.
【００３４】電極形成に用いた治具２９０を図７に示
す。この治具は、表面用マスク２９１・裏面用マスク２
９２・バー支持用マスク２９３を圧着したものである。
バー支持用マスク２９３は、バーの一方の端に対応する
部分がテーパー状に開いており、ここからバーを入れ
る。図７に示すように治具２９０をバー入り口が上にな
るように立て、バーをこの入り口に軽く当てて放すこと
により、バーの重さによって自動的にバーは支持マスク
２９３に精度良くはめこまれる。バーが入り口からこぼ
れ落ちないよう、フタ２９５で入り口を覆う。The jig 290 used for forming the electrodes is shown in FIG. This jig is used for the front surface mask 291 and the back surface mask 2
92. A bar supporting mask 293 is pressure bonded.
In the bar supporting mask 293, a portion corresponding to one end of the bar is opened in a tapered shape, and the bar is inserted from here. As shown in FIG. 7, the jig 290 is set up with the bar entrance facing upward, and the bar is lightly applied to this entrance and released, so that the bar automatically fits into the support mask 293 accurately with the weight of the bar. Be done. Cover the entrance with a lid 295 to prevent the bar from spilling from the entrance.
【００３５】この治具２９０を真空蒸着機内に成長面が
下になるように置き、成長面にＡｕＺｎ電極２４１を蒸
着し、治具２９０を反転して裏面にＡｕＧｅ／Ｎｉ電極
２４３を蒸着する。その後治具２９０ごと４５０℃１０
分熱処理する。The jig 290 is placed in a vacuum evaporator so that the growth surface faces downward, the AuZn electrode 241 is vapor-deposited on the growth surface, the jig 290 is inverted, and the AuGe / Ni electrode 243 is vapor-deposited on the back surface. After that, the jig 290 and 450 ℃ 10
Heat treatment for minutes.
【００３６】以上の後治具２９０のフタ２９５を外して
各バーを取り出す。The lid 295 of the rear jig 290 is removed to take out each bar.
【００３７】チップ分割、パッケージングを終えた素子
は波長１．５１μｍで発振した。本素子は、長期信頼性
が保証できる実用光出力として８０ｍＷが得られるの
で、無中継距離伝送に有利となる。The element which had been divided into chips and packaged oscillated at a wavelength of 1.51 μm. Since this device can obtain 80 mW as a practical optical output that can guarantee long-term reliability, it is advantageous for non-repeatered distance transmission.
【００３８】・実施例４ 実施例４はＩｎＧａＡｓ歪量子井戸レーザに本製造方法
を適用した例である。内部に歪量子井戸レーザ構造を成
長させたウエハ３０１を厚さ１００μｍにラッピング
し、幅３００μｍのバー３０２に劈開する。バー３０２
の端面に、ＭＢＥ法によって、窓層となるアンドープＧ
ａＡｓ層３３０を形成する。Example 4 Example 4 is an example in which the present manufacturing method is applied to an InGaAs strained quantum well laser. A wafer 301 having a strained quantum well laser structure grown inside is lapped to a thickness of 100 μm and cleaved into a bar 302 having a width of 300 μm. Bar 302
The undoped G that will become the window layer on the end face of the
The aAs layer 330 is formed.
【００３９】反射膜としては、前端面にＳｉ3Ｎ4膜３３
２、後端面にＳｉ3Ｎ4／Ｓｉ／Ｓｉ3Ｎ4／Ｓｉ／Ｓｉ3
Ｎ4膜３３４をＣＶＤ法で形成した。As the reflection film, the Si 3 N 4 film 33 is formed on the front end face.
2. Si 3 N 4 / Si / Si 3 N 4 / Si / Si 3 on the rear end face
The N 4 film 334 was formed by the CVD method.
【００４０】電極形成は、図８（ａ）に示す電極蒸着治
具３９０を用いて行った。これはバーの端面近傍を覆う
部品３９４、バーおよび部品３９４の両端を支持する部
品３９１・部品３９２と、弾性板３９５よりなる。部品
３９１の枠に部品３９４とバー３０２を少し隙間をあけ
て図に示す向きに交互に置き、部品３９２を取り付け
て、最後に弾性板３９５を押し付けて部品３９４とバー
３０２間の隙間がなくなるように取り付ける。部品３９
４は図８（ｂ）に示すような断面を有しており、両端の
突起Ａ、Ｃで電極が端面に回り込むのを防ぐとともに、
中央の小さい突起Ｂで端面の中央部と接触することによ
り、端面の端にある光出射部と接触しないようになって
いる。また部品３９４の端面は図８（ｃ）に示すように
部品３９１と接触する部分が削られており、バー３０２
と部品３９４を共に部品３９１に載せたときに互いの位
置が合うようになっている。The electrodes were formed using the electrode vapor deposition jig 390 shown in FIG. 8 (a). This includes a component 394 that covers the vicinity of the end surface of the bar, components 391 and 392 that support both ends of the bar and the component 394, and an elastic plate 395. The component 394 and the bar 302 are alternately placed in the frame of the component 391 in the direction shown in the figure with a slight gap, the component 392 is attached, and finally the elastic plate 395 is pressed so that the gap between the component 394 and the bar 302 is eliminated. Attach to. Parts 39
4 has a cross section as shown in FIG. 8 (b), and the projections A and C at both ends prevent the electrode from wrapping around the end face.
By contacting the central portion of the end face with the small protrusion B at the center, the light emitting portion at the end of the end face is prevented from contacting. Further, as shown in FIG. 8C, the end surface of the component 394 is cut off at a portion in contact with the component 391.
When both the component 394 and the component 394 are placed on the component 391, the positions of the components match each other.
【００４１】治具３９０に挿入した状態で、バーの成長
面にＡｕＺｎ電極３４１を形成し、治具を反転して裏面
にＡｕＧｅ／Ｎｉ電極３４３を形成する。治具ごとバー
を４５０℃１０分熱処理する。その後各チップに分割し
パッケージングする。While inserted in the jig 390, the AuZn electrode 341 is formed on the growth surface of the bar, and the jig is inverted to form the AuGe / Ni electrode 343 on the back surface. The bar is heat treated together with the jig at 450 ° C. for 10 minutes. After that, it is divided into each chip and packaged.
【００４２】本実施例に示した電極形成方式では、バー
幅が幾らあっても同一の治具で作製できる。また電極非
蒸着部の大きさは、部品３９４の突起Ａ・Ｃと突起Ｂと
の差Ｌ（図８（ｂ））に応じてほぼ正確に決まる。本実
施例ではＬ＝１０μｍであるので、各バーの両端に１０
μｍづつ電極非蒸着部が形成される。In the electrode forming method shown in this embodiment, the same jig can be used for manufacturing regardless of the bar width. Further, the size of the electrode non-deposited portion is determined almost accurately according to the difference L (FIG. 8B) between the protrusions A and C and the protrusion B of the component 394. In this embodiment, L = 10 μm, so that 10 at both ends of each bar.
Electrode non-deposited portions are formed every μm.
【００４３】素子断面図を図９に示す。ｎ型ＧａＡｓ基
板３１０にｎ型Ａｌ0・5Ｇａ0・5Ａｓクラッド層３１２、
混晶比ｘが徐々に０．５→０へ変化するｎ型ＡｌxＧａ
1-xＡｓクラッド層３１４、厚さ１００Åのアンドープ
Ｉｎ0・2Ｇａ0・8Ａｓ歪量子井戸活性層３１６、混晶比ｘ
が徐々に０→０．５へ変化するｐ型ＡｌxＧａ1-xＡｓク
ラッド層３１８、ｐ型Ａｌ0・5Ｇａ0・5Ａｓクラッド層３
２０、ｐ型ＧａＡｓキャップ層３２２をＭＢＥ法によっ
て成長する。ｐ型クラッド層３２０、ｐ型キャップ層３
２２を幅３μｍのメサ形状となるようにエッチングし、
ｐ型キャップ層３２２の表面以外をＳｉ3Ｎ4層３２４で
覆う。ここで歪量子井戸活性層３１６に用いたＩｎＧａ
Ａｓは一般には基板と格子整合しないが、この実施例の
ように非常に膜厚が薄い場合、結晶が歪むことにより格
子欠陥のない結晶成長をすることが可能である。A sectional view of the element is shown in FIG. n-type n-type GaAs substrate 310 Al 0 · 5 Ga 0 · 5 As cladding layer 312,
N-type Al x Ga in which the mixed crystal ratio x gradually changes from 0.5 to 0
1-x As cladding layer 314, 100 Å thick undoped In 0 .2 Ga 0 .8 As strained quantum well active layer 316, mixed crystal ratio x
P-type Al x Ga 1-x As cladding layer 318, p-type Al 0 · 5 Ga 0 · 5 As cladding layer 3 but varying the gradual 0 → 0.5
20, the p-type GaAs cap layer 322 is grown by the MBE method. p-type clad layer 320, p-type cap layer 3
22 is etched into a mesa shape with a width of 3 μm,
The surface of the p-type cap layer 322 other than the surface is covered with the Si 3 N 4 layer 324. Here, the InGa used for the strained quantum well active layer 316 is used.
As is generally not lattice-matched to the substrate, but when the film thickness is very thin as in this embodiment, it is possible to grow crystals without lattice defects due to strain of the crystals.
【００４４】この半導体レーザは、発行波長が０．９８
μｍであるので、Ｅｒドープ・ファイバの励起用光源に
適している。またＩｎＧａＡｓ層３１６の混晶比および
膜厚を変化させることにより、波長０．９〜１．１μｍ
の半導体レーザを作ることが可能である。This semiconductor laser has an emission wavelength of 0.98.
Since it is μm, it is suitable as a light source for exciting an Er-doped fiber. By changing the mixed crystal ratio and the film thickness of the InGaAs layer 316, the wavelength of 0.9 to 1.1 μm can be obtained.
It is possible to make semiconductor lasers.
【００４５】最大出力としては、１２０ｍＶが得られ
た。As the maximum output, 120 mV was obtained.
【００４６】なお、実施例１〜４に用いる治具の材料と
しては、高精度な加工が可能で、電極形成時に安定なも
のであれば特に限定されない。例えばステンレス鋼、真
鋳、アルミニウムなどの金属材料、Ｓｉ、ＧａＡｓ、Ｉ
ｎＰなどの半導体、ＡＩＮ、ＢＮ、カーボンなどの誘電
体を用いることができる。The materials for the jigs used in Examples 1 to 4 are not particularly limited as long as they can be processed with high precision and are stable during electrode formation. For example, stainless steel, brass, metallic materials such as aluminum, Si, GaAs, I
A semiconductor such as nP or a dielectric such as AIN, BN or carbon can be used.
【００４７】[0047]
【発明の効果】本発明の半導体レーザの製造方法は、多
数の劈開済みのバーをマスクで挟み込んで固定し、マス
クに固定されたバー全体をウエハの様に扱って電極形成
を行うため、各バーを個々に扱う場合と比べて工程の繁
雑さを大幅に低減でき、素子の価格の上昇を抑えること
ができる。According to the method of manufacturing a semiconductor laser of the present invention, a large number of cleaved bars are sandwiched and fixed by a mask, and the entire bar fixed to the mask is treated like a wafer to form electrodes. The complexity of the process can be significantly reduced as compared with the case where each bar is handled individually, and the increase in the cost of the element can be suppressed.
【００４８】従って本発明は、非常に優れた特性を有す
る劈開面成長窓構造半導体レーザの普及、それを用いた
各種機器の高性能化、低価格化に大いに役立つ。Therefore, the present invention greatly contributes to the spread of the cleaved surface growth window structure semiconductor laser having very excellent characteristics, the high performance of various equipment using the same, and the cost reduction.
【図１】第１の実施例による半導体レーザの製造法の説
明図である。FIG. 1 is an explanatory view of a method for manufacturing a semiconductor laser according to a first embodiment.
【図２】第１の実施例による半導体レーザバーの構成を
示す斜視図である。FIG. 2 is a perspective view showing a configuration of a semiconductor laser bar according to a first embodiment.
【図３】第１の実施例に用いた半導体レーザの断面図で
ある。FIG. 3 is a sectional view of a semiconductor laser used in the first embodiment.
【図４】第２の実施例による半導体レーザの製造法の説
明図である。FIG. 4 is an explanatory diagram of a method for manufacturing a semiconductor laser according to a second embodiment.
【図５】第２の実施例に用いた半導体レーザの断面図で
ある。FIG. 5 is a sectional view of a semiconductor laser used in a second embodiment.
【図６】第３の実施例に用いた半導体レーザの断面図で
ある。FIG. 6 is a sectional view of a semiconductor laser used in a third embodiment.
【図７】第３の実施例による半導体レーザの製造法の説
明図である。FIG. 7 is an explanatory diagram of the method for manufacturing the semiconductor laser according to the third embodiment.
【図８】第４の実施例による半導体レーザの製造法の説
明図である。FIG. 8 is an explanatory diagram of the method of manufacturing the semiconductor laser according to the fourth embodiment.
【図９】第４の実施例に用いた半導体レーザの断面図で
ある。FIG. 9 is a sectional view of a semiconductor laser used in a fourth embodiment.
【図１０】従来例による半導体レーザの製造法の説明図
である。FIG. 10 is an explanatory diagram of a method for manufacturing a semiconductor laser according to a conventional example.
２ 内部成長済バー ３０Ａ・３０Ｂ 窓層 ３２，３４ 反射膜 ４０・４２・４４・４６ 電極 ９１・９２ 電極形成用マスク ９３ バー支持マスク 2 Inner grown bar 30A / 30B Window layer 32/34 Reflective film 40/42/44/46 Electrode 91/92 Electrode forming mask 93 Bar support mask
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 修 大阪府大阪市阿倍野区長池町22番22号 シ ャープ株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Osamu Yamamoto 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka
Claims (3)
結晶成長させ、前記基板をバー状に劈開してレーザ光の
出射端面を露出させ、前記出射端面に活性層よりも広い
バンドギャップを有する半導体層を成長させた半導体レ
ーザの製造方法において、 前記バーの表面および裏面に形成する電極蒸着部に対応
する開口部および前記バーと前記開口部との位置ずれを
防止する支持部を設けた治具にバーを固定し、その状態
で表面および裏面の電極形成、および必要に応じて熱処
理を行い、電極形成工程終了後に前記治具から前記バー
を取り出すことを特徴とする半導体レーザの製造方法。1. A light emitting region including an active layer is crystal-grown on a semiconductor substrate, and the substrate is cleaved in a bar shape to expose an emission end face of laser light, and a band gap wider than that of the active layer is formed on the emission end face. In the method for manufacturing a semiconductor laser having a semiconductor layer grown, an opening corresponding to an electrode deposition portion formed on the front surface and the back surface of the bar, and a supporting portion for preventing positional deviation between the bar and the opening are provided. A method of manufacturing a semiconductor laser, comprising fixing a bar to a jig, forming electrodes on the front surface and the back surface in that state, and performing heat treatment as necessary, and taking out the bar from the jig after the electrode forming step is completed. ..
するための開口部を有する第１のマスクと、裏面電極を
形成するための開口部を有する第２のマスクと、前記両
マスクを固定するための機構よりなることを特徴とする
請求項１記載の半導体レーザの製造方法。2. The jig fixes at least a first mask having an opening for forming a front surface electrode, a second mask having an opening for forming a back surface electrode, and both masks. 2. The method of manufacturing a semiconductor laser according to claim 1, further comprising a mechanism for
近傍を覆うための第１の部品と、前記バーと前記部品を
固定するための機構よりなることを特徴とする請求項１
記載の半導体レーザの製造方法。3. The jig comprises a first part for covering at least the vicinity of the end surface of the bar, and a mechanism for fixing the bar and the part.
A method for manufacturing the semiconductor laser described above.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046975A JP2849500B2 (en) | 1992-03-04 | 1992-03-04 | Manufacturing method of semiconductor laser |
| US07/995,064 US5413956A (en) | 1992-03-04 | 1992-12-22 | Method for producing a semiconductor laser device |
| DE69230694T DE69230694T2 (en) | 1992-03-04 | 1992-12-24 | Manufacturing method of a semiconductor laser device |
| EP97106425A EP0789430B1 (en) | 1992-03-04 | 1992-12-24 | A method of producing a semiconductor laser device |
| DE69224617T DE69224617T2 (en) | 1992-03-04 | 1992-12-24 | Manufacturing process for a semiconductor laser |
| EP92311823A EP0558856B1 (en) | 1992-03-04 | 1992-12-24 | A method for producing a semiconductor laser device |
| US08/314,585 US5571750A (en) | 1992-03-04 | 1994-09-28 | Method for producing a semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4046975A JP2849500B2 (en) | 1992-03-04 | 1992-03-04 | Manufacturing method of semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05251824A true JPH05251824A (en) | 1993-09-28 |
| JP2849500B2 JP2849500B2 (en) | 1999-01-20 |
Family
ID=12762246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4046975A Expired - Fee Related JP2849500B2 (en) | 1992-03-04 | 1992-03-04 | Manufacturing method of semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2849500B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007889A (en) * | 1998-06-22 | 1999-12-28 | Target Technology, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6544616B2 (en) | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6764735B2 (en) | 1998-06-22 | 2004-07-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6790503B2 (en) | 1998-06-22 | 2004-09-14 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6841219B2 (en) | 1998-06-22 | 2005-01-11 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7018696B2 (en) | 2003-04-18 | 2006-03-28 | Target Technology Company Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7045187B2 (en) | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP2022550019A (en) * | 2019-09-25 | 2022-11-30 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for carrier proximity mask |
| JP2022550018A (en) * | 2019-09-25 | 2022-11-30 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for carrier proximity mask |
-
1992
- 1992-03-04 JP JP4046975A patent/JP2849500B2/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007889A (en) * | 1998-06-22 | 1999-12-28 | Target Technology, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6280811B1 (en) | 1998-06-22 | 2001-08-28 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6764735B2 (en) | 1998-06-22 | 2004-07-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6790503B2 (en) | 1998-06-22 | 2004-09-14 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6841219B2 (en) | 1998-06-22 | 2005-01-11 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6852384B2 (en) | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6896947B2 (en) | 1998-06-22 | 2005-05-24 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7045187B2 (en) | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6544616B2 (en) | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7018696B2 (en) | 2003-04-18 | 2006-03-28 | Target Technology Company Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| JP2022550019A (en) * | 2019-09-25 | 2022-11-30 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for carrier proximity mask |
| JP2022550018A (en) * | 2019-09-25 | 2022-11-30 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for carrier proximity mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2849500B2 (en) | 1999-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7769069B2 (en) | Integrated semiconductor laser diode module and manufacturing method of the same | |
| US5413956A (en) | Method for producing a semiconductor laser device | |
| JPH0864906A (en) | Manufacture of semiconductor device | |
| JPH05251824A (en) | Manufacture of semiconductor laser | |
| JP2002141611A (en) | Semiconductor light emitting element and its fabricating method | |
| US6670211B2 (en) | Semiconductor laser device | |
| JP2687495B2 (en) | Manufacturing method of semiconductor laser | |
| JP2849501B2 (en) | Manufacturing method of semiconductor laser | |
| JP3113443B2 (en) | Method for manufacturing semiconductor laser device | |
| JP3095582B2 (en) | Method for manufacturing semiconductor laser device | |
| JP3257662B2 (en) | Semiconductor laser end face passivation method and jig | |
| JP2633384B2 (en) | Optical wavelength converter | |
| JPS59114885A (en) | Manufacture of semiconductor device | |
| JP2736173B2 (en) | Method for manufacturing semiconductor laser device | |
| JPH067629B2 (en) | Semiconductor laser | |
| JP2847770B2 (en) | Method for forming protective layer on end face of semiconductor laser cavity | |
| JP2000133870A (en) | Manufacture of semiconductor laser bar | |
| JPH01293686A (en) | Manufacture of semiconductor laser element | |
| JPH1117276A (en) | Semiconductor device with semiconductor laser and optical amplifier integrated thereon | |
| JPH033287A (en) | Secondary harmonic wave generating device | |
| JPH0856047A (en) | Semiconductor device and its manufacture | |
| JP2000068582A (en) | Semiconductor laser and manufacture thereof | |
| JPH01155675A (en) | Semiconductor laser device | |
| JPS61258490A (en) | Semiconductor laser | |
| JPH10242559A (en) | Semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |