JPH05251452A - Solder bump forming material for semiconductor element - Google Patents

Solder bump forming material for semiconductor element

Info

Publication number
JPH05251452A
JPH05251452A JP4049857A JP4985792A JPH05251452A JP H05251452 A JPH05251452 A JP H05251452A JP 4049857 A JP4049857 A JP 4049857A JP 4985792 A JP4985792 A JP 4985792A JP H05251452 A JPH05251452 A JP H05251452A
Authority
JP
Japan
Prior art keywords
wire
forming material
solder bump
bump forming
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4049857A
Other languages
Japanese (ja)
Other versions
JP3186178B2 (en
Inventor
Toshinori Kogashiwa
俊典 小柏
Hideyuki Akimoto
英行 秋元
Hiroyuki Shigyo
裕之 執行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP04985792A priority Critical patent/JP3186178B2/en
Publication of JPH05251452A publication Critical patent/JPH05251452A/en
Application granted granted Critical
Publication of JP3186178B2 publication Critical patent/JP3186178B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide a solder bump forming material useful to improve durability and reliability of a semiconductor device by more reducing a distance between bump electrodes by further decreasing in diameter a wire, providing a solder bump forming material capable of expediting a high density mounting of an LSI, and stabilizing a ball separating position in the case of forming the bump using a wire obtained by a quick cooling solidifying method. CONSTITUTION:A solder bump forming material for a semiconductor element contains 0.001-1wt.% of Cu and 0.001-1wt.% of Ni added to any one essential element of Pb, Sn and In. A solder bump forming material for a semiconductor element is manufactured by forming mixed composition of the material in a fine wire state by a quick cooling solidifying method.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体素子用のはんだバ
ンプ形成材料、詳しくは、ワイヤレスボンディング法、
特にフリップチップボンディング法またはテープキャリ
アボンディング法により半導体素子（以下、チップとい
う）を基板に実装する際に用いるはんだバンプの形成材
料に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solder bump forming material for semiconductor devices, more specifically, a wireless bonding method,
In particular, the present invention relates to a solder bump forming material used when a semiconductor element (hereinafter referred to as a chip) is mounted on a substrate by a flip chip bonding method or a tape carrier bonding method.

【０００２】[0002]

【従来の技術】本願出願人は、細い合金ワイヤ状に作製
され、そのワイヤ先端を加熱して形成したボールをチッ
プ表面の電極上に熱圧着した後そのボールをワイヤから
切断して電極上面にバンプを形成する、ワイヤボンディ
ング装置を用いたバンプ形成に有用なはんだバンプの形
成材料を発明し、先に出願した（特開昭63−301535号，
特願平２−304509号等）。2. Description of the Related Art The applicant of the present invention has made a thin alloy wire into a wire, and heat-bonds a ball formed by heating the tip of the wire onto an electrode on the surface of a chip and then cutting the ball from the wire onto the electrode upper surface. We have invented a solder bump forming material useful for forming bumps using a wire bonding apparatus, and filed a prior application (JP-A-63-301535,
Japanese Patent Application No. 2-304509).

【０００３】[0003]

【発明が解決しようとする課題】一方、近年ＬＳＩパッ
ケージの多ピン化に伴いチップ上に形成するバンプ電極
の相互間距離をより小さくすること（狭ピッチ化）が要
求されており、これを実現するに際して重要なことは、
バンプ同士がショートしないこと、即ちバンプ形成用の
ワイヤ線径をより小さくすることにある。しかし乍ら、
上記従来の形成材料により作製したワイヤの線径は30μ
ｍが限度であり、このワイヤを用いてバンプを形成した
場合、バンプ相互のピッチは150μｍが限界であった。On the other hand, in recent years, with the increase in the number of pins of LSI packages, it has been required to make the mutual distance between bump electrodes formed on a chip smaller (narrower pitch), which is realized. The important thing to do is
The purpose is to prevent the bumps from short-circuiting, that is, to reduce the wire diameter for forming the bumps. However,
The wire diameter of the wire made from the above conventional forming material is 30μ
When the bumps were formed using this wire, the pitch between the bumps was limited to 150 μm.

【０００４】また、上記従来の形成材料は急冷凝固法に
より細い合金ワイヤ状に作製することで、ワイヤ先端に
形成したボールをチップ表面の電極上に熱圧着した後そ
のワイヤを引上げればボールがワイヤから自動的に切り
離される、ワイヤボンダを用いたバンプ形成に顕著な効
果を奏するものである。しかし乍ら、従来の形成材料に
よれば、ボール切り離し時におけるワイヤ切断位置にば
らつきが生じて、バンプ高さが一定しない不具合があ
り、これらの不具合は細線になる（線径が小さくなる）
につれ顕著に現れるものであった。Further, the above-mentioned conventional forming material is made into a thin alloy wire by a rapid solidification method, so that the ball formed at the tip of the wire is thermocompression-bonded onto the electrode on the chip surface and then the wire is pulled up to form the ball. This is a remarkable effect in forming bumps using a wire bonder, which is automatically separated from the wires. However, according to the conventional forming material, there is a problem in that the bump height is not constant due to variations in the wire cutting position during ball separation, and these problems become fine lines (small wire diameter).
It appeared remarkably as time went by.

【０００５】本発明はこのような従来事情に鑑みてなさ
れたものであり、その目的とするところの第１は、ワイ
ヤのさらなる細線化を図って、バンプ電極の相互間距離
をより小さくする（狭ピッチ化）ことにある。The present invention has been made in view of the above conventional circumstances, and the first object of the present invention is to further thin wires so that the mutual distance between bump electrodes is made smaller ( Narrow pitch).

【０００６】また本発明第２の目的は、前述のワイヤ細
線化に加えて、ボール切り離し時におけるワイヤ切断位
置のばらつきを抑えてバンプ高さを一定させ、耐久性及
び信頼性の高い半導体装置を製作し得るはんだバンプの
形成材料を提供することにある。A second object of the present invention is to provide a semiconductor device having high durability and reliability by suppressing the variation of the wire cutting position at the time of ball cutting to keep the bump height constant, in addition to the above-mentioned wire thinning. It is to provide a material for forming a solder bump that can be manufactured.

【０００７】[0007]

【課題を解決するための手段】本願発明者は上述の目的
を達成するために、Ｐｂ，Ｓｎ，Ｉｎの何か一つを主要
元素とするバンプ形成材料に悪影響を及ぼす虞れのない
各種添加元素の中から、チップ電極上面に予め形成する
下地金属として用いられるＣｕ，Ｎｉに着目して鋭意研
究を行った結果、これら両元素の同時添加により、その
添加量が少量であってもワイヤの細線化に所望の効果を
得られると共に、これにより得られた形成材料を急冷凝
固法により細いワイヤ状に作製することでボール切断位
置のばらつき改善に所望の効果を得られることを見出だ
し、本発明のはんだバンプ形成材料を提供するに至っ
た。In order to achieve the above-mentioned object, the inventor of the present application adds various additives which do not adversely affect a bump forming material containing any one of Pb, Sn and In as a main element. From the elements, as a result of intensive research focusing on Cu and Ni used as a base metal which is previously formed on the upper surface of the chip electrode, the result of simultaneous addition of both of these elements is that even if the addition amount is small, It was found that a desired effect can be obtained in thinning, and that a desired effect can be obtained in improving the variation in the ball cutting position by producing the forming material thus obtained into a thin wire shape by the rapid solidification method. The present invention has provided a solder bump forming material.

【０００８】すなわち、本発明のはんだバンプ形成材料
は、請求項１ではＰｂ，Ｓｎ，Ｉｎの何か一つの主要元
素に対し、0.001 wt％〜１wt％のＣｕ、及び、0.001 wt
％〜１wt％のＮｉを添加せしめたことを特徴とし、請求
項２では前記の配合組成からなるものを急冷凝固法によ
り細いワイヤ状に作製してなることを特徴とする。That is, in the solder bump forming material of the present invention, according to claim 1, 0.001 wt% to 1 wt% of Cu and 0.001 wt% with respect to any one main element of Pb, Sn, and In.
% To 1 wt% of Ni is added, and the second aspect is characterized in that the compound having the above-mentioned composition is manufactured into a thin wire by the rapid solidification method.

【０００９】[0009]

【作用】本発明の形成材料によれば、Ｃｕ，Ｎｉの同時
添加により、Ｃｕ，Ｎｉ各々の添加量が少量であっても
ワイヤの機械的強度を向上でき、ワイヤ細線化に所望の
効果を得れる。According to the forming material of the present invention, by simultaneously adding Cu and Ni, the mechanical strength of the wire can be improved even if the addition amounts of Cu and Ni are small, and the desired effect for wire thinning can be obtained. You can get it.

【００１０】また、Ｃｕ，Ｎｉの同時添加によりワイヤ
の伸び率が抑えられ、急冷凝固法により細いワイヤ状に
作製した場合、ボール切断位置のばらつき改善に所望の
効果を得る。When Cu and Ni are added at the same time, the elongation of the wire is suppressed, and when the wire is made into a thin wire by the rapid solidification method, the desired effect can be obtained in improving the variation in the ball cutting position.

【００１１】さらに、Ｃｕ，Ｎｉの同時添加によるＣ
ｕ，Ｎｉの相互作用により、例えばＣｕまたはＮｉの単
独添加により前記と同等の効果を得ようとする場合に比
べ、それら両元素の添加量が少量であっても前述の各作
用を得ることが可能になる。このことは、各々の元素の
添加量が多くなるにつれてボールが硬くなり過ぎるよう
な不具合を招く虞れがなく、所定のバンプ特性を得る点
で有用である。Further, C is obtained by simultaneously adding Cu and Ni.
Due to the interaction of u and Ni, compared with the case where an effect equivalent to the above is to be obtained by adding Cu or Ni alone, the above-mentioned respective effects can be obtained even if the addition amounts of both elements are small. It will be possible. This is useful in obtaining a predetermined bump characteristic without fear that the ball becomes too hard as the addition amount of each element increases.

【００１２】しかし、Ｃｕ及びＮｉの各々の添加量が0.
001 wt％未満では上記の特性を得ることができない。ま
た、Ｃｕ及びＮｉの各々の添加量が１wt％を越えると、
ワイヤ先端に形成するボールが硬くなり過ぎ、バンプ特
性が低下するので好ましくない。従って、Ｃｕ及びＮｉ
の添加量を上述の範囲に設定するものである。However, the amount of each of Cu and Ni added is 0.
If it is less than 001 wt%, the above characteristics cannot be obtained. Moreover, if the addition amount of each of Cu and Ni exceeds 1 wt%,
The ball formed at the tip of the wire becomes too hard and the bump characteristics deteriorate, which is not preferable. Therefore, Cu and Ni
The addition amount of is set within the above range.

【００１３】[0013]

【実施例】以下、本発明の実施例を説明する。表１また
は表２は主要元素Ｓｎに対して各種添加元素を表中の記
載量配合せしめてなるバンプ形成材料で、各試料 No.１
〜10は、夫々の組成（不可避不純物を含む）にしたもの
を急冷凝固法により、詳しくは従来知られた液中紡糸法
により直接にワイヤーを形成するか、或いは単ロール法
により得られた合金材料を冷間プレスし、さらに押出し
成形してワイヤーを成形するなどの方法により、線径25
μｍのワイヤに作製した。EXAMPLES Examples of the present invention will be described below. Table 1 or 2 is a bump forming material in which various additive elements are mixed with the main element Sn in the amounts described in the table, and each sample No. 1
-10 are alloys obtained by forming each wire (including inevitable impurities) by a rapid solidification method, specifically by directly forming a wire by a conventionally known submerged spinning method, or by a single roll method. A wire diameter of 25 can be obtained by cold pressing the material and then extruding it to form a wire.
It was made into a wire of μm.

【００１４】尚、試料 No.１，２、11，12はＣｕ，Ｎｉ
の何か一方を単独で添加した場合、No.３、13はＣｕ及
びＮｉの添加量が0.001 wt％未満の場合、 No.10、20は
Ｃｕ及びＮｉの添加量が夫々１wt％を越える場合を夫々
示す比較例である。Sample Nos. 1, 2, 11 and 12 are Cu and Ni.
When either one of the above is added alone, No. 3 and 13 are when the added amount of Cu and Ni is less than 0.001 wt%, and No. 10 and 20 are when the added amount of Cu and Ni exceeds 1 wt% respectively. Is a comparative example showing respectively.

【００１５】そして、各試料について引張強度、伸び
率、ボール切断位置の高さばらつきについてテストし
た。Then, each sample was tested for tensile strength, elongation, and variation in ball cutting position height.

【００１６】引張強度は、標点間距離100mm の各試料を
引張速度10mm／分にて引張りテストをし測定した値であ
る。The tensile strength is a value measured by subjecting each sample having a gauge length of 100 mm to a tensile test at a tensile speed of 10 mm / min.

【００１７】伸び率は、切断するまでの伸び長さを標点
間距離(100mm）で除した値である。The elongation is a value obtained by dividing the length of elongation until cutting by the gauge length (100 mm).

【００１８】ボール切断位置の高さばらつきは、前述の
ボールボンディング法により各試料の先端にボールを形
成し、これをチップ上面に熱圧着した後に引上げてワイ
ヤから自動的に切り離し、そのボール直上から切断位置
までの高さを測定した値である。The height variation of the ball cutting position is caused by forming a ball at the tip of each sample by the above-mentioned ball bonding method, thermocompressing it on the chip upper surface, then pulling it up and automatically separating it from the wire, It is a value obtained by measuring the height to the cutting position.

【００１９】[0019]

【表１】 [Table 1]

【００２０】[0020]

【表２】 [Table 2]

【００２１】上記表１，２によれば、ＣｕとＮｉを同時
に添加してもその添加量が0.001 wt％未満（試料 No.
３、13）では引張強度は2.0 以下であり、添加元素Ｃｕ
とＮｉを各々単独で相当量（1.0 wt％）添加した場合
（試料 No.１，２、11，12）は引張強度についてある程
度の改善が見られるが、Ｃｕ及びＮｉを同時添加した場
合はごく少量の添加（0.001 wt％）でこれと同等の効果
を得られる（試料 No.４、14）ことが確認される。According to Tables 1 and 2 above, even if Cu and Ni are added at the same time, the addition amount is less than 0.001 wt% (Sample No.
3 and 13), the tensile strength is 2.0 or less, and the additive element Cu
When Ni and Ni are added individually in a considerable amount (1.0 wt%) (Sample Nos. 1, 2, 11 and 12), some improvement in tensile strength is observed, but when Cu and Ni are added simultaneously, it is very small. It is confirmed that the same effect can be obtained with a small amount of addition (0.001 wt%) (Sample Nos. 4 and 14).

【００２２】また、ＣｕとＮｉの単独添加（試料 No.
１，２、11，12）では伸び率が40％、切断位置のばらつ
きが±50μｍ以上生ずることが確認される。Further, Cu and Ni are added individually (Sample No.
1, 2, 11 and 12), it is confirmed that the elongation is 40% and the variation of cutting position is ± 50 μm or more.

【００２３】さらに、ＣｕとＮｉを同時に添加してもそ
の添加量が0.001 wt％未満（試料 No.３、13）では伸び
率、切断位置のばらつきが改善されず、添加量が１wt％
を越えた場合（試料 No.10、20）は引張強度が強すぎ、
ワイヤ先端に形成するボールが硬くなり過ぎて所定のバ
ンプ特性を得難くなることが確認される。Further, even if Cu and Ni are added at the same time, if the addition amount is less than 0.001 wt% (Sample Nos. 3 and 13), variations in elongation and cutting position are not improved, and the addition amount is 1 wt%.
If it exceeds (Sample Nos. 10 and 20), the tensile strength is too high,
It is confirmed that the ball formed at the tip of the wire becomes too hard and it is difficult to obtain the predetermined bump characteristics.

【００２４】従って、表１の測定結果により明らかな如
く、本発明実施品（試料 No.４〜９、14〜19）によれ
ば、半導体素子のバンプ形成用として、所定の特性がえ
られることが確認できた。Therefore, as is clear from the measurement results in Table 1, according to the products of the present invention (Sample Nos. 4 to 9 and 14 to 19), predetermined characteristics can be obtained for forming bumps of semiconductor elements. Was confirmed.

【００２５】表３は主要元素Ｐｂに対して各種添加元素
を表中の記載量配合せしめてなるバンプ形成材料、表４
は主要元素Ｉｎに対して各種添加元素を表中の記載量配
合せしめてなるバンプ形成材料を夫々示す。各試料 No.
21〜30，31〜40は前述の各試料 No.１〜10，11〜20と同
様、急冷凝固法で線径25μｍのワイヤに作製した後、引
張強度、伸び率、ボール切断位置の高さばらつきについ
てテストした。Table 3 shows a bump forming material obtained by mixing various additive elements with the main element Pb in the amounts shown in the table, and Table 4
Indicates the bump forming materials obtained by mixing various additive elements with the main element In in the amounts shown in the table. Each sample No.
21 to 30, 31 to 40 are similar to each of the above-mentioned sample Nos. 1 to 10 and 11 to 20, and after being made into a wire with a wire diameter of 25 μm by the rapid solidification method, the tensile strength, elongation and height of the ball cutting position Tested for variability.

【００２６】[0026]

【表３】 [Table 3]

【００２７】[0027]

【表４】 [Table 4]

【００２８】各試料の測定結果から、本発明実施品（試
料 No.24〜29、34〜39）によれば引張強度の向上、伸び
率抑制、ボール切断位置の安定化に所望の特性が得られ
ることが確認され、これにより、主要元素がＰｂ，Ｉｎ
であっても、主要元素がＳｎである場合と同様の効果を
得られることが確認できた。From the measurement results of each sample, according to the products of the present invention (Sample Nos. 24 to 29 and 34 to 39), desired characteristics were obtained for improving tensile strength, suppressing elongation and stabilizing the ball cutting position. It was confirmed that the main elements were Pb and In.
It was confirmed that even in the case, the same effect as when the main element is Sn is obtained.

【００２９】尚、上述の本発明実施品（試料 No.４〜
９，14〜19，24〜29、34〜39）は急冷凝固法により細い
ワイヤ状に作製したが、請求項１記載の成形材料におい
てはこれに限定されず、急冷凝固法によらない成形方
法、例えば、夫々の組成（不可避不純物を含む）にした
ものを溶解鋳造した後に線引加工で線径25μｍのワイヤ
に作製しても、引張強度については上記と同様の効果が
得られ、初期の目的を達成することは可能である。The above-mentioned product of the present invention (Sample No. 4 to
9, 14 to 19, 24 to 29, 34 to 39) were produced in the form of thin wires by the rapid solidification method, but the molding material according to claim 1 is not limited to this, and the molding method not by the rapid solidification method. For example, even if each composition (including unavoidable impurities) is melt-cast, and then wire-drawn to a wire with a diameter of 25 μm, the same effect as above can be obtained for the tensile strength. It is possible to achieve the purpose.

【００３０】[0030]

【発明の効果】本発明によれば、Ｃｕ，Ｎｉの同時添加
によりワイヤの機械的強度向上を図ってはんだバンプ形
成用のワイヤ細線化に所望の効果を得、従来の形成材料
では30μｍが限界であったワイヤ線径を25μｍとし、バ
ンプの相互間距離を100 μｍ以下まで下げることが可能
になった。According to the present invention, by simultaneously adding Cu and Ni, the mechanical strength of the wire is improved to obtain a desired effect in thinning the wire for forming the solder bump, and the conventional forming material has a limit of 30 μm. With the wire diameter of 25 μm, the distance between bumps can be reduced to 100 μm or less.

【００３１】また、Ｃｕ，Ｎｉの同時添加によりワイヤ
の伸び率を抑えて、急冷凝固法により細いワイヤ状に作
製した場合、即ち、チップ電極上に熱圧着したボールを
自動的に切り離す場合のボール切断位置の安定化を図る
ことができた。Further, when the elongation rate of the wire is suppressed by simultaneously adding Cu and Ni and the wire is manufactured into a thin wire by the rapid solidification method, that is, the ball thermocompression-bonded on the chip electrode is automatically separated. We were able to stabilize the cutting position.

【００３２】しかもＣｕ，Ｎｉの相互作用によりその添
加量を少く抑えて、チップの電極上にバンプを形成する
際の特性（ボールの真球度，硬度等）は従来同様に維持
しつつ、前述の各効果を得ることができた。In addition, the amount of addition of Cu and Ni is suppressed to a small amount by the interaction of Cu and Ni, and the characteristics (sphericity, hardness, etc. of the ball) when forming bumps on the electrodes of the chip are maintained as in the conventional case, while Each effect of was able to be obtained.

【００３３】従って、ワイヤボンディング装置を用いた
バンプ形成に有用で、且つバンプ電極の相互間距離を従
来より小さくしてＬＳＩの高密度実装（多ピン化）を促
進し得るはんだバンプの形成材料を提供することができ
た。Therefore, there is provided a solder bump forming material which is useful for forming bumps using a wire bonding apparatus and which can reduce the mutual distance between bump electrodes as compared with the prior art and promote high-density mounting (multi-pinning) of LSI. Could be provided.

【００３４】また請求項２によれば前述の効果に加え、
バンプ形成時におけるワイヤ切断位置の安定化を図っ
て、急冷凝固法により得たワイヤを用いて製作する半導
体装置の耐久性及び信頼性を向上に有用なはんだバンプ
の形成材料を提供することができた。According to claim 2, in addition to the above effects,
It is possible to provide a solder bump forming material useful for improving the durability and reliability of a semiconductor device manufactured by using a wire obtained by a rapid solidification method by stabilizing the wire cutting position during bump formation. It was

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 Ｐｂ，Ｓｎ，Ｉｎの何か一つの主要元素
に対し、0.001 wt％〜１wt％のＣｕ、及び、0.001 wt％
〜１wt％のＮｉを添加せしめたことを特徴とする半導体
素子用のはんだバンプ形成材料。1. 0.001 wt% to 1 wt% Cu and 0.001 wt% with respect to any one main element of Pb, Sn, and In
A solder bump forming material for semiconductor devices, characterized in that Ni of 1 wt% is added. 【請求項２】 急冷凝固法により細いワイヤ状に作製し
てなる請求項１記載の半導体素子用のはんだバンプ形成
材料。2. The solder bump forming material for a semiconductor device according to claim 1, which is formed into a thin wire by a rapid solidification method.
JP04985792A 1992-03-06 1992-03-06 Solder bump forming materials for semiconductor devices Expired - Fee Related JP3186178B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04985792A JP3186178B2 (en) 1992-03-06 1992-03-06 Solder bump forming materials for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04985792A JP3186178B2 (en) 1992-03-06 1992-03-06 Solder bump forming materials for semiconductor devices

Publications (2)

Publication Number Publication Date
JPH05251452A true JPH05251452A (en) 1993-09-28
JP3186178B2 JP3186178B2 (en) 2001-07-11

Family

ID=12842728

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0985486A1 (en) * 1998-03-26 2000-03-15 Nihon Superior Sha Co., Ltd Leadless solder
EP1043112A1 (en) * 1998-10-28 2000-10-11 Nihon Superior Sha Co., Ltd Lead-free solder
WO2001036696A1 (en) * 1999-11-17 2001-05-25 Ks Gleitlager Gmbh Galvanically deposited bearing alloy, galvanic bath and galvanic deposition method
US6440360B1 (en) * 1999-02-08 2002-08-27 Tokyo First Trading Company Pb-free soldering alloy
JP2012016748A (en) * 2008-03-05 2012-01-26 Senju Metal Ind Co Ltd Lead-free solder connection structure and solder ball

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0985486A1 (en) * 1998-03-26 2000-03-15 Nihon Superior Sha Co., Ltd Leadless solder
EP0985486A4 (en) * 1998-03-26 2003-01-02 Nihon Superior Sha Co Ltd Leadless solder
EP1043112A1 (en) * 1998-10-28 2000-10-11 Nihon Superior Sha Co., Ltd Lead-free solder
EP1043112A4 (en) * 1998-10-28 2003-01-02 Nihon Superior Sha Co Ltd Lead-free solder
US6440360B1 (en) * 1999-02-08 2002-08-27 Tokyo First Trading Company Pb-free soldering alloy
WO2001036696A1 (en) * 1999-11-17 2001-05-25 Ks Gleitlager Gmbh Galvanically deposited bearing alloy, galvanic bath and galvanic deposition method
JP2012016748A (en) * 2008-03-05 2012-01-26 Senju Metal Ind Co Ltd Lead-free solder connection structure and solder ball

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