JPH05243162A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH05243162A JPH05243162A JP4116592A JP4116592A JPH05243162A JP H05243162 A JPH05243162 A JP H05243162A JP 4116592 A JP4116592 A JP 4116592A JP 4116592 A JP4116592 A JP 4116592A JP H05243162 A JPH05243162 A JP H05243162A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- exhaust
- reaction chamber
- semiconductor wafer
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、気相成長装置に関
し、特に排気経路内壁に付着する生成物の除去によるメ
ンテナンス頻度を低減させる気相成長装置の反応室の構
造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to a structure of a reaction chamber of the vapor phase growth apparatus for reducing maintenance frequency due to removal of products adhering to an inner wall of an exhaust path.
【０００２】[0002]
【従来の技術】図３は従来の気相成長装置の反応室の一
例を示す概略断面図であり、図において１は半導体ウエ
ハ２上に薄膜形成を行う反応室、３は反応室１内に配設
され、半導体ウエハ２を取り付け保持するとともに半導
体ウエハ２を加熱するヒータが内蔵されたウエハステー
ジ、４は反応室１内に反応ガスおよび置換用不活性ガス
を導入するガスヘッド、５はウエハステージ３を囲む外
周部に設けられた排気経路、６は反応室１内のガスが排
気経路５を通って排気口７にスムーズに流通するために
排気経路５と排気口７との間に設けられた排気チャンバ
である。ここで、排気経路５は、反応室１内のガスがス
ムーズに排出されるように、Ａの寸法を大きくして有効
面積を大きくしている。2. Description of the Related Art FIG. 3 is a schematic sectional view showing an example of a reaction chamber of a conventional vapor phase growth apparatus. In the figure, 1 is a reaction chamber for forming a thin film on a semiconductor wafer 2 and 3 is a reaction chamber 1 inside. A wafer stage, which is provided and has a built-in heater for mounting and holding the semiconductor wafer 2 and heating the semiconductor wafer 2, has a gas head 4 for introducing a reaction gas and an inert gas for substitution into the reaction chamber 1, and 5 a wafer. An exhaust path 6 provided on the outer peripheral portion surrounding the stage 3 is provided between the exhaust path 5 and the exhaust port 7 so that the gas in the reaction chamber 1 smoothly flows through the exhaust path 5 to the exhaust port 7. Is the exhaust chamber. Here, in the exhaust path 5, the size of A is increased to increase the effective area so that the gas in the reaction chamber 1 is smoothly discharged.
【０００３】つぎに、図３に示した従来の気相成長装置
の動作について説明する。まづ、ウエハステージ３に半
導体ウエハ２を取り付けた後、排気装置（図示せず）に
より排気口７を介して反応室１内を高真空にする。つい
で、ウエハステージ３に内蔵されたヒータによって半導
体ウエハ２を所定温度に加熱し、ガスヘッド４からウエ
ハステージ３に取り付けられた半導体ウエハ２の主面に
反応ガスを噴出する。半導体ウエハ２の主面に到達した
反応ガスは、熱エネルギによって化学反応を起こし、半
導体ウエハ２の主面上に反応生成物が堆積し、薄膜が形
成される。Next, the operation of the conventional vapor phase growth apparatus shown in FIG. 3 will be described. First, after mounting the semiconductor wafer 2 on the wafer stage 3, the inside of the reaction chamber 1 is set to a high vacuum through the exhaust port 7 by an exhaust device (not shown). Next, the semiconductor wafer 2 is heated to a predetermined temperature by the heater built in the wafer stage 3, and the reaction gas is ejected from the gas head 4 onto the main surface of the semiconductor wafer 2 attached to the wafer stage 3. The reaction gas that has reached the main surface of the semiconductor wafer 2 causes a chemical reaction due to thermal energy, and a reaction product is deposited on the main surface of the semiconductor wafer 2 to form a thin film.
【０００４】また、未反応の反応ガスは、図４の矢印で
示すように、排気経路５内を放射状に流れ、排気チャン
バ６を通って排気口７から外部に排気される。この時、
高温に熱せられている反応ガスが排気経路５で冷やさ
れ、図５に示すように、排気経路５、排気チャンバ６の
内壁にはフレーク状あるいは粉状の生成物８が堆積付着
している。最後に、半導体ウエハ２上の薄膜形成が終了
すると、反応ガスにかわって置換用不活性ガス例えば窒
素ガスをガスヘッド４から噴出し、反応室１内に残留す
る未反応の反応ガスの排気を行い、薄膜形成工程を終了
する。The unreacted reaction gas flows radially in the exhaust path 5 and is exhausted to the outside from the exhaust port 7 through the exhaust chamber 6 as shown by the arrow in FIG. At this time,
The reaction gas heated to a high temperature is cooled in the exhaust passage 5, and as shown in FIG. 5, flaky or powdery products 8 are deposited and adhered to the inner walls of the exhaust passage 5 and the exhaust chamber 6. Finally, when the thin film formation on the semiconductor wafer 2 is completed, an inert gas for substitution such as nitrogen gas is jetted from the gas head 4 in place of the reaction gas to exhaust the unreacted reaction gas remaining in the reaction chamber 1. Then, the thin film forming process is completed.
【０００５】[0005]
【発明が解決しようとする課題】従来の気相成長装置は
以上のように構成されているので、排気経路５、排気チ
ャンバ６の内壁に生成物８が堆積することにより、排気
経路５内のガスの流れがかわり、半導体ウエハ２上に成
膜される膜厚の均一性を損なう、あるいは堆積した生成
物８が剥離して半導体ウエハ２上に成膜される膜特性に
影響を及ぼすため、定期的に装置を停止し、反応室１を
大気に開放し、生成物８が付着している部品を取り外し
て、生成物８を除去する必要があり、人手がかかるとと
もにコスト高となりまた、装置の稼働率が低下するとい
う課題があった。Since the conventional vapor phase growth apparatus is constructed as described above, the product 8 is deposited on the inner walls of the exhaust passage 5 and the exhaust chamber 6, so that the inside of the exhaust passage 5 is covered. Since the gas flow changes, the uniformity of the film thickness formed on the semiconductor wafer 2 is impaired, or the deposited product 8 peels off and affects the film characteristics formed on the semiconductor wafer 2. It is necessary to periodically stop the apparatus, open the reaction chamber 1 to the atmosphere, remove the parts to which the product 8 is attached, and remove the product 8, which is labor-intensive and costly. There was a problem that the utilization rate of the.
【０００６】この発明は、上記のような課題を解決する
ためになされたもので、排気経路の内壁に堆積する生成
物を除去し、装置のメンテナンス頻度を低減できコスト
安の気相成長装置を得ることを目的とする。The present invention has been made in order to solve the above problems, and it is possible to reduce the maintenance frequency of the apparatus by removing the products accumulated on the inner wall of the exhaust path, and to provide a low cost vapor phase growth apparatus. The purpose is to get.
【０００７】[0007]
【課題を解決するための手段】この発明に係る気相成長
装置は、排気経路に昇降部を設け、クリーニング時に排
気経路の有効面積を小さくするものである。In the vapor phase growth apparatus according to the present invention, an elevating part is provided in the exhaust path to reduce the effective area of the exhaust path during cleaning.
【０００８】[0008]
【作用】この発明においては、クリーニング工程におい
て、排気経路の有効面積を小さくして、排気経路内のガ
ス流速を高速とし、この高速のガス流が内壁に付着した
反応物を除去するように働く。According to the present invention, in the cleaning step, the effective area of the exhaust path is reduced to increase the gas flow velocity in the exhaust path, and this high-speed gas flow acts to remove the reactant adhering to the inner wall. ..
【０００９】[0009]
【実施例】以下、この発明の実施例を図について説明す
る。図１はこの発明の気相成長装置における反応室の一
実施例を示す概略断面図であり、図において図３に示し
た従来の気相成長装置と同一または相当部分には同一符
号を付し、その説明を省略する。９は反応室の周辺に設
けられ排気経路５の底部に設けられた昇降部であり、こ
の昇降部９の上昇によって排気経路５の有効面積が小さ
くなる。昇降部の駆動機構は特に図示していないが、電
動、油圧、空圧等を動力源とし、ネジ、ラックを介し昇
降させるものであり、またベローズ等であってもよい。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view showing an embodiment of a reaction chamber in the vapor phase growth apparatus of the present invention. In the figure, the same or corresponding parts as those of the conventional vapor phase growth apparatus shown in FIG. , The description is omitted. Reference numeral 9 denotes an elevating part provided in the periphery of the reaction chamber and provided at the bottom of the evacuation path 5, and as the elevating part 9 rises, the effective area of the exhaust path 5 becomes smaller. Although not specifically shown, the drive mechanism of the elevating part is a device that moves up and down through a screw, a rack, using electric power, hydraulic pressure, pneumatic pressure, etc. as a power source, and may be a bellows or the like.
【００１０】つぎに、図１に示したこの発明の気相成長
装置の動作について説明する。半導体ウエハ２上への薄
膜形成工程は、図３に示した従来の気相成長装置と同様
に行われる。この時、排気経路５の内壁にも、同様に生
成物８が堆積付着している。Next, the operation of the vapor phase growth apparatus of the present invention shown in FIG. 1 will be described. The thin film forming step on the semiconductor wafer 2 is performed in the same manner as the conventional vapor phase growth apparatus shown in FIG. At this time, the product 8 is similarly deposited and adhered to the inner wall of the exhaust path 5.
【００１１】ここで、生成物８のクリーニング工程につ
いて説明する。図２に示すように、昇降部９を上昇させ
て排気経路５の有効面積を小さくし、薄膜形成工程にお
ける反応室１内の残留反応ガス排気時と同流量の置換用
不活性ガスをガスヘッド４から反応室１内に導入する。
そこで、排気装置により排気口７を介して反応室１内の
置換用不活性ガスを排気する。排気経路５は有効面積が
小さくなっているので、排気経路５内でのガス流の流速
は増し、この高速のガス流によって排気経路４の内壁に
付着している生成物８が吹き飛ばされて、排気口７から
外部に排気される。Now, the cleaning process of the product 8 will be described. As shown in FIG. 2, the elevating part 9 is raised to reduce the effective area of the exhaust path 5, and the replacement head inert gas is supplied at the same flow rate as when the residual reaction gas in the reaction chamber 1 is exhausted in the thin film forming process. It is introduced into the reaction chamber 1 from 4.
Therefore, the replacement inert gas in the reaction chamber 1 is exhausted through the exhaust port 7 by the exhaust device. Since the exhaust passage 5 has a smaller effective area, the flow velocity of the gas flow in the exhaust passage 5 increases, and the product 8 attached to the inner wall of the exhaust passage 4 is blown off by the high-speed gas flow, The gas is exhausted from the exhaust port 7 to the outside.
【００１２】例えば、ガスヘッド４の直径が１５０ｍ
ｍ、Ａが１０ｍｍとすると、排気経路５の有効面積は４
７００ｍｍ2（１５０×１０×π）となり、この状態で
薄膜形成工程を行い、昇降部９を上昇させてＡを０．５
ｍｍとし、排気経路５の有効面積を２３０ｍｍ2（１５
０×０．５×π）と減少させてクリーニング工程を実施
すれば、効果的に生成物８を除去できた。For example, the diameter of the gas head 4 is 150 m
If m and A are 10 mm, the effective area of the exhaust path 5 is 4
It becomes 700 mm 2 (150 × 10 × π), and the thin film forming step is performed in this state, and the elevating part 9 is raised to set A to 0.5.
mm, the effective area of the exhaust path 5 is 230 mm 2 (15
The product 8 could be effectively removed by carrying out the cleaning step after reducing it to 0 × 0.5 × π).
【００１３】このように、このクリーニング工程を定期
的に実施することにより、装置を停止して反応室１を開
けて生成物８の除去作業をすることなく、排気経路５の
内壁に付着している生成物８を除去でき、半導体ウエハ
２上に再現性よく薄膜を形成できる。As described above, by carrying out the cleaning step regularly, the apparatus is stopped and the reaction chamber 1 is opened to remove the product 8 without adhering to the inner wall of the exhaust passage 5. The generated product 8 can be removed, and a thin film can be formed on the semiconductor wafer 2 with good reproducibility.
【００１４】なお、上記実施例では、ウエハステージ３
が上側に、ガスヘッド４が下側に配置されたウエハフェ
イスダウン構造を用いて説明しているが、ウエハステー
ジ３が下側に、ガスヘッド４が上側に配置されたウエハ
フェイスアップ構造であっても同様の効果を奏する。In the above embodiment, the wafer stage 3
Has been described using the wafer face-down structure in which the gas head 4 is arranged on the upper side and the gas head 4 is arranged on the lower side, but the wafer face-up structure in which the wafer stage 3 is arranged on the lower side and the gas head 4 is arranged on the upper side. However, the same effect is obtained.
【００１５】また、上記実施例では、クリーニング工程
での置換用不活性ガス例えば窒素ガスの流量を排気時と
同流量として説明しているが、クリーニング工程におけ
る置換用不活性ガスの流量をさらに大きくすれば、より
効果的に生成物８の除去ができる。In the above embodiment, the flow rate of the inert gas for substitution in the cleaning step, such as nitrogen gas, is the same as that at the time of exhaust, but the flow rate of the inert gas for substitution in the cleaning step is further increased. By doing so, the product 8 can be removed more effectively.
【００１６】さらに、上記実施例では、薄膜形成工程で
の反応室１内の残留反応ガスの排気時とクリーニング工
程とで同じ置換用不活性ガス例えば窒素ガスを用いて説
明しているが、不活性ガスであれば異なってもよい。Further, in the above-mentioned embodiment, the same inert gas for substitution, such as nitrogen gas, is used for exhausting the residual reaction gas in the reaction chamber 1 in the thin film forming step and for the cleaning step. The active gas may be different.
【００１７】さらにまた、上記実施例では、半導体ウエ
ハ２上への薄膜形成工程とクリーニング工程とを別工程
として説明しているが、薄膜形成工程における反応室１
内の残留反応ガスの排気時にクリーニング工程を実施し
ても同様の効果を奏する。Furthermore, in the above embodiment, the thin film forming step on the semiconductor wafer 2 and the cleaning step are described as separate steps, but the reaction chamber 1 in the thin film forming step is described.
Even if the cleaning process is performed when the residual reaction gas in the inside is exhausted, the same effect can be obtained.
【００１８】[0018]
【発明の効果】以上のようにこの発明によれば、クリー
ニング工程で排気経路の有効面積を小さくして排気経路
内のガス流速を高速となるようにしているので、排気経
路の内壁に堆積付着している生成物を自動的に除去し、
半導体ウエハ上に再現性よく薄膜を形成でき、装置のメ
ンテナンス頻度を低減できコスト安の気相成長装置が得
られる効果がある。As described above, according to the present invention, the effective area of the exhaust passage is made small in the cleaning step so that the gas flow velocity in the exhaust passage becomes high. Automatically removes the
There is an effect that a thin film can be formed on a semiconductor wafer with good reproducibility, the maintenance frequency of the apparatus can be reduced, and a low cost vapor phase growth apparatus can be obtained.
【図１】この発明の気相成長装置による反応室の一実施
例を示す概略断面図である。FIG. 1 is a schematic sectional view showing an embodiment of a reaction chamber by the vapor phase growth apparatus of the present invention.
【図２】図１に示すこの発明の気相成長装置のクリーニ
ング動作を説明する概略断面図である。FIG. 2 is a schematic sectional view explaining a cleaning operation of the vapor phase growth apparatus of the present invention shown in FIG.
【図３】従来の気相成長装置による反応室の一例を示す
概略断面図である。FIG. 3 is a schematic cross-sectional view showing an example of a reaction chamber by a conventional vapor phase growth apparatus.
【図４】図３のＩＶ−ＩＶ線に沿った断面図である。4 is a cross-sectional view taken along the line IV-IV of FIG.
【図５】図３に示す従来の気相成長装置による反応物の
付着状態を示す概略断面図である。FIG. 5 is a schematic cross-sectional view showing a state of attachment of reactants by the conventional vapor phase growth apparatus shown in FIG.
１ 反応室 ２ 半導体ウエハ ３ ウエハステージ ４ ガスヘッド ５ 排気経路 ９ 昇降部 1 Reaction Chamber 2 Semiconductor Wafer 3 Wafer Stage 4 Gas Head 5 Exhaust Path 9 Elevator
Claims (1)
導体ウエハを取り付け保持するウエハステージと、前記
ウエハステージに取り付けられた前記半導体ウエハの主
面と対向して前記反応室内に配設されたガスヘッドと、
前記ウエハステージを囲む外周部に設けられ、前記反応
室内の反応ガスを不活性ガスに置換するための排気経路
とを備え、前記ガスヘッドから反応ガスを前記反応室内
に導入し、前記半導体ウエハ上に薄膜を形成する気相成
長装置において、前記反応室周辺であって、前記排気経
路に設けられた昇降部を備えたことを特徴とする気相成
長装置。1. A reaction chamber, a wafer stage arranged in the reaction chamber for mounting and holding a semiconductor wafer, and arranged in the reaction chamber facing a main surface of the semiconductor wafer mounted on the wafer stage. Gas head,
An exhaust path for replacing a reaction gas in the reaction chamber with an inert gas, which is provided on an outer peripheral portion surrounding the wafer stage, and introduces the reaction gas into the reaction chamber from the gas head, A vapor phase growth apparatus for forming a thin film on a substrate, comprising: an elevating part provided in the exhaust path around the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4116592A JP2928013B2 (en) | 1992-02-27 | 1992-02-27 | Vapor phase growth apparatus and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4116592A JP2928013B2 (en) | 1992-02-27 | 1992-02-27 | Vapor phase growth apparatus and cleaning method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05243162A true JPH05243162A (en) | 1993-09-21 |
| JP2928013B2 JP2928013B2 (en) | 1999-07-28 |
Family
ID=12600815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4116592A Expired - Fee Related JP2928013B2 (en) | 1992-02-27 | 1992-02-27 | Vapor phase growth apparatus and cleaning method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2928013B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273037A (en) * | 1994-03-29 | 1995-10-20 | Kawasaki Steel Corp | Processing equipment for semiconductor substrate |
-
1992
- 1992-02-27 JP JP4116592A patent/JP2928013B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07273037A (en) * | 1994-03-29 | 1995-10-20 | Kawasaki Steel Corp | Processing equipment for semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2928013B2 (en) | 1999-07-28 |
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