JPH05234942A - Electrode for machining - Google Patents
Electrode for machiningInfo
- Publication number
- JPH05234942A JPH05234942A JP7446591A JP7446591A JPH05234942A JP H05234942 A JPH05234942 A JP H05234942A JP 7446591 A JP7446591 A JP 7446591A JP 7446591 A JP7446591 A JP 7446591A JP H05234942 A JPH05234942 A JP H05234942A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- processing
- gas
- gas supply
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ラジカル反応を利用し
た無歪精密加工装置に使用する電極に係わり、更に詳し
くはシリコン単結晶等の半導体若しくは導体又はガラス
やセラミックス等の絶縁体に欠陥や熱的変質層を導入す
ることなく高精度に加工することができる加工用電極に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode used in a strain-free precision processing apparatus utilizing a radical reaction, and more specifically, to a semiconductor or conductor such as a silicon single crystal or an insulator such as glass or ceramics having a defect or a defect. The present invention relates to a processing electrode that can be processed with high accuracy without introducing a thermally deteriorated layer.
【０００２】[0002]
【従来の技術】従来、高電圧を印加した電極によって発
生させた反応ガスに基づく中性ラジカルを被加工物の加
工面に供給し、この中性ラジカルと加工面を構成する原
子又は分子とのラジカル反応によって生成した揮発性物
質を気化させて除去し、シリコン単結晶等の半導体若し
くは導体又はガラスやセラミックス等の絶縁体に欠陥や
熱的変質層を導入することなく高精度に加工することが
可能な無歪精密加工方法は、本出願人によって特開平１
−１２５８２９号公報として既に開示されている。2. Description of the Related Art Conventionally, a neutral radical based on a reaction gas generated by an electrode to which a high voltage is applied is supplied to a processing surface of a workpiece, and the neutral radical is separated from the atoms or molecules constituting the processing surface. It is possible to vaporize and remove volatile substances generated by radical reaction, and process them with high accuracy without introducing defects or thermally altered layers in semiconductors or conductors such as silicon single crystals or insulators such as glass and ceramics. A possible strain-free precision processing method is disclosed in Japanese Patent Application Laid-Open No.
It has already been disclosed as Japanese Patent No. 125829.
【０００３】即ち、被加工物と電極を反応ガスを含む雰
囲気気体中に配し、被加工物と電極間に直流電圧を印加
するか若しくは電極に高周波電圧を印加して、電極近傍
に反応ガスに基づく中性ラジカルを発生させるものであ
る。この際、加工電極をワイヤー電極となした場合には
被加工物を切断加工若しくは溝切り加工、平板状電極と
なした場合には平滑化加工若しくは鏡面加工、更に複雑
な形状の電極となしてその形状を被加工物に転写する転
写加工等を行うことができるものである。That is, a workpiece and an electrode are placed in an atmosphere gas containing a reaction gas, and a direct current voltage is applied between the workpiece and the electrode, or a high frequency voltage is applied to the electrode so that the reactive gas is present in the vicinity of the electrode. It generates a neutral radical based on. At this time, when the machining electrode is a wire electrode, the work piece is cut or grooved, and when it is a flat plate electrode, a smoothing process or a mirror surface process is performed, and an electrode having a more complicated shape is formed. It is possible to perform transfer processing or the like for transferring the shape to an object to be processed.
【０００４】しかし、ワイヤー電極を用いた切断加工に
おいては、その過程に形成される切断溝に反応ガスを十
分に供給することができず、また広い面積の平滑面を有
する平面電極を用いた鏡面加工においては、その加工ギ
ャップ内の中央部に反応ガスを十分に供給できず、その
部分で中性ラジカルの密度が低くなる。その結果、切断
加工の場合はその加工の進行に伴い加工速度の低下が生
じ、また鏡面加工の場合には電極の周縁部と中央部での
加工速度の相違から加工量のムラが生じるのである。However, in the cutting process using the wire electrode, the reaction gas cannot be sufficiently supplied to the cutting groove formed in the process, and a mirror surface using a flat electrode having a wide area smooth surface is used. In processing, the reaction gas cannot be sufficiently supplied to the central portion within the processing gap, and the density of neutral radicals becomes low in that portion. As a result, in the case of cutting processing, the processing speed decreases as the processing progresses, and in the case of mirror-finish processing, the processing amount varies due to the difference in processing speed between the peripheral portion and the central portion of the electrode. ..
【０００５】[0005]
【発明が解決しようとする課題】本発明は前述の状況に
鑑み、解決しようとするところは、切断加工及び鏡面加
工の加工を行うに際しても、電極内部に反応ガスの供給
路を形成することにより、その加工領域の全域へ常に一
定量の反応ガスを供給でき、又は反応ガスに基づく一定
密度の中性ラジカルを供給できるラジカル反応を利用し
た無歪精密加工装置における加工用電極を提供する点に
ある。SUMMARY OF THE INVENTION In view of the above situation, the present invention is to solve the problem by forming a reaction gas supply path inside the electrode even when performing cutting and mirror finishing. The point is to provide a processing electrode in a strain-free precision processing apparatus that utilizes a radical reaction that can always supply a constant amount of reaction gas to the entire processing region or supply a constant density of neutral radicals based on the reaction gas. is there.
【０００６】[0006]
【課題を解決するための手段】本発明は、前述の課題解
決のために、電極に直流電圧若しくは交流電圧を印加
し、その電界によって反応ガスに基づく中性ラジカルを
生成し、該中性ラジカルと被加工物の加工面を構成する
原子又は分子とのラジカル反応によって生成した揮発性
物質を気化させて除去し、加工を進行させてなる無歪精
密加工装置の加工用電極において、内部に加工面側へ開
口した反応ガスを含む雰囲気気体を供給するガス供給路
を設けてなる加工用電極を構成した。In order to solve the above-mentioned problems, the present invention applies a direct current voltage or an alternating current voltage to an electrode, generates a neutral radical based on a reaction gas by the electric field, and generates the neutral radical. And the working electrode of the strain-free precision processing equipment that vaporizes and removes the volatile substances generated by the radical reaction with the atoms or molecules that make up the work surface of the workpiece A processing electrode is provided which is provided with a gas supply path which supplies an atmospheric gas containing a reaction gas and which is opened to the surface side.
【０００７】内部に加工面側へ開口した反応ガスを含む
雰囲気気体を供給するガス供給路を形成するとともに、
先端を電界が集中する針状形状となし、加工面との間で
中性ラジカルを生成してなる加工用電極を構成した。A gas supply path for supplying an atmospheric gas containing a reaction gas, which is opened toward the processing surface, is formed inside, and
The tip has a needle-like shape in which the electric field is concentrated, and a machining electrode is formed by generating neutral radicals between the tip and the machining surface.
【０００８】加工面側を針状形状となした外部電極の内
部に加工面側へ開口した反応ガスを含む雰囲気気体を供
給するガス供給路を形成するとともに、該ガス供給路内
に電界集中型の内部電極を絶縁して配し、該内部電極と
外部電極間で中性ラジカルを生成してなる加工用電極を
構成した。A gas supply path for supplying an atmosphere gas containing a reaction gas opened to the processing surface side is formed inside the external electrode having the processing surface side in a needle shape, and an electric field concentration type is provided in the gas supply path. Insulating the inner electrode of No. 2 and arranging it, and forming a neutral radical between the inner electrode and the outer electrode to form a working electrode.
【０００９】内部に反応ガスを含む雰囲気気体を供給す
るガス供給路を形成するとともに、該ガス供給路から加
工面側へ開口した多数の噴出口を形成し、加工面側を電
界が分散する平面形状となし、加工面との間で中性ラジ
カルを生成してなる加工用電極を構成した。A flat surface in which a gas supply path for supplying an atmospheric gas containing a reaction gas is formed inside, and a large number of ejection openings opened from the gas supply path to the processing surface side are formed so that an electric field is dispersed on the processing surface side. A processing electrode was formed by forming neutral radicals between the shape and the processed surface.
【００１０】加工面側を平面形状となした外部電極の内
部に反応ガスを含む雰囲気気体を供給するガス供給路を
形成するとともに、該ガス供給路から加工面側へ開口し
た多数の噴出口を形成し、また該ガス供給路内に電界分
散型の内部電極を絶縁して配し、該内部電極と外部電極
間で中性ラジカルを生成してなる加工用電極を構成し
た。A gas supply path for supplying an atmosphere gas containing a reaction gas is formed inside the external electrode having a flat surface on the side of the machined surface, and a large number of ejection openings opened from the gas supply path to the side of the machined surface. An electric field dispersion type internal electrode was formed in the gas supply path so as to be insulated, and a neutralizing radical was generated between the internal electrode and the external electrode to form a processing electrode.
【００１１】[0011]
【作用】以上の如き内容からなる本発明の加工用電極
は、電極内部に反応ガスを含む雰囲気気体のガス供給路
を形成することにより、切断加工における加工溝の底部
の加工領域、及び鏡面加工における平板状の電極と被加
工物の加工面との加工ギャップ内であってその中央部の
加工領域にも常に必要十分な一定量の反応ガスを供給
し、又は反応ガスに基づく一定密度の中性ラジカルを供
給し、切断加工の場合はその加工の進行に伴い加工速度
の低下が生じず、また鏡面加工の場合には電極の周縁部
と中央部での加工速度を一定にして加工量の均一化を図
るのである。In the machining electrode of the present invention having the above-mentioned contents, the gas supply path of the atmosphere gas containing the reaction gas is formed inside the electrode, so that the machining area at the bottom of the machining groove in the cutting process and the mirror surface machining are performed. In the machining gap between the flat plate electrode and the machined surface of the work piece, always supply a necessary and sufficient constant amount of reaction gas to the machining area in the center, or at a constant density based on the reaction gas. Reactive radicals are supplied, the cutting speed does not decrease with the progress of cutting in the case of cutting, and in the case of mirror-finishing, the processing speed is kept constant at the peripheral and central parts of the electrode and The aim is to make it uniform.
【００１２】また、電極内部にガス供給路を形成すると
ともに、先端を電界が集中する針状形状となすことによ
り、切断加工、溝切り加工又は任意形状の加工が行え、
また電極内部にガス供給路を形成するとともに、加工面
側を電界が分散する平面形状となし且つガス供給路から
加工面側へ開口した多数の噴出口を形成することによ
り、平滑化加工若しくは鏡面加工が行えるのである。Further, by forming a gas supply path inside the electrode and forming the tip into a needle-like shape in which an electric field is concentrated, cutting, grooving or arbitrary shape processing can be performed,
In addition, the gas supply path is formed inside the electrode, and the processing surface has a planar shape in which the electric field is dispersed, and by forming a large number of jet openings that open from the gas supply path to the processing surface, smoothing processing or mirror surface processing is achieved. It can be processed.
【００１３】更に、加工用電極をガス供給路を有する外
部電極とその内部に絶縁して配した内部電極より構成す
ることにより、加工用電極の内部、即ち内部電極と外部
電極間で中性ラジカルを生成して、それを先端から加工
面に供給するので、被加工物が導体、絶縁体若しくは半
導体の別にかかわらず、前記外部電極と内部電極間に電
圧を印加することにより加工することが可能となる。Further, the processing electrode is composed of an external electrode having a gas supply path and an internal electrode insulated from the inside of the processing electrode, so that a neutral radical is generated inside the processing electrode, that is, between the internal electrode and the external electrode. Is generated and supplied to the processing surface from the tip, it is possible to perform processing by applying a voltage between the external electrode and the internal electrode regardless of whether the workpiece is a conductor, an insulator or a semiconductor. Becomes
【００１４】[0014]
【実施例】本発明は、不対電子を有する反応性に富んだ
ラジカル（遊離基）と被加工物を構成する原子又は分子
とのラジカル反応（遊離基反応）を利用し、生成した揮
発性物質を気化させて除去し、加工を進行させるもので
ある。EXAMPLES The present invention utilizes the radical reaction (free radical reaction) between a radical (free radical) having an unpaired electron and having a high reactivity with an atom or a molecule constituting a workpiece, to generate a volatile substance. The substance is vaporized and removed, and the processing proceeds.
【００１５】ここで、ラジカルを発生させる方法として
は、１Torr以下（10-3〜１Torr）程度の真空度で放電に
より容易に生成できるプラズマを利用することも考慮さ
れるが、発生するラジカルの密度が低く加工速度が遅い
ことから、１気圧以上の高圧力下で加工用電極に直流電
圧又は交流電圧を印加して不活性ガスに基づく荷電粒子
を発生させ若しくは寿命の長い準安定状態の粒子を発生
させ、これらの粒子とと反応ガスとの衝突によって、反
応ガスに基づく中性ラジカルを生成するのである。Here, as a method of generating radicals, it is considered to use plasma which can be easily generated by discharge at a vacuum degree of about 1 Torr or less (10 −3 to 1 Torr), but the density of generated radicals is considered. Is low and the processing speed is slow, a DC voltage or an AC voltage is applied to the processing electrode under a high pressure of 1 atm or more to generate charged particles based on an inert gas or to generate metastable particles with a long life. Neutral radicals based on the reaction gas are generated by the collision of these particles with the reaction gas.
【００１６】次に添付図面に示した実施例に基づき更に
本発明の詳細を説明する。図１は、本発明の加工原理を
示す概念図であり、図中１は被加工物、２は加工用電
極、３は反応ガス、４は中性ラジカル、５は被加工物１
の構成原子又は分子、６は揮発性化合物である。The present invention will be further described in detail with reference to the embodiments shown in the accompanying drawings. FIG. 1 is a conceptual diagram showing the processing principle of the present invention. In the figure, 1 is a workpiece, 2 is a processing electrode, 3 is a reaction gas, 4 is a neutral radical, 5 is a workpiece 1.
The constituent atoms or molecules of, and 6 are volatile compounds.
【００１７】被加工物１の加工面７の近傍に加工用電極
２の先端を所定の加工ギャップを設けて配し、その内部
に形成したガス供給路８から反応ガス３及び不活性ガス
からなる雰囲気気体を加工面側に開口した噴出口９を通
して加工面７に供給する。この際、被加工物１と加工用
電極２間に直流電圧又は交流電圧を印加し、又は加工用
電極２が外部電極10とその内部のガス供給路８に絶縁し
て配した内部電極11からなる場合には、該外部電極10と
内部電極11間に直流電圧又は交流電圧を印加すると、被
加工物１と加工用電極２間又は外部電極10と内部電極11
間で高電界が発生し、その電界によって先ず不活性ガス
が電離若しくは励起されて活性化し、それと反応ガス３
との衝突によって該反応ガス３に基づく中性ラジカル４
が生成される。この中性ラジカル４は、噴出口９からの
ガス流に伴って加工面７に達し、中性ラジカル４は被加
工物１を構成する原子又は分子５とラジカル反応して揮
発性物質６が生成する。そして、常温若しくは被加工物
１に熱的変質を与えない程度の比較的低い温度に加熱す
ると、その揮発性物質６が気化して加工面７から除去さ
れ、もって加工が進行するのである。ここで、この加工
用電極２の形状を針状形状となした場合には任意形状の
加工、ブレード形状となした場合には切断加工又は溝切
り加工、加工面７に沿った長尺形状若しくは平面形状と
なした場合には平滑化加工若しくは鏡面加工が行えるの
である。The tip of the machining electrode 2 is arranged near the machined surface 7 of the workpiece 1 with a predetermined machining gap, and a reaction gas 3 and an inert gas are supplied from a gas supply passage 8 formed therein. Atmospheric gas is supplied to the machining surface 7 through a jet port 9 that is open on the machining surface side. At this time, a DC voltage or an AC voltage is applied between the workpiece 1 and the machining electrode 2, or the machining electrode 2 is insulated from the internal electrode 11 that is insulated from the external electrode 10 and the gas supply passage 8 inside the external electrode 10. In such a case, when a DC voltage or an AC voltage is applied between the external electrode 10 and the internal electrode 11, the workpiece 1 and the processing electrode 2 or between the external electrode 10 and the internal electrode 11 is processed.
A high electric field is generated between the two, and the inert gas is first ionized or excited to be activated by the electric field, and the reaction gas and the reaction gas 3
Neutral radicals 4 based on the reaction gas 3 by collision with
Is generated. The neutral radicals 4 reach the processing surface 7 with the gas flow from the ejection port 9, and the neutral radicals 4 react with the atoms or molecules 5 forming the workpiece 1 to generate volatile substances 6. To do. Then, when the material is heated to a normal temperature or a relatively low temperature that does not cause thermal deterioration of the work piece 1, the volatile substance 6 is vaporized and removed from the work surface 7, so that the work proceeds. Here, when the shape of the processing electrode 2 is a needle shape, processing of an arbitrary shape, when it is a blade shape, cutting processing or grooving processing, a long shape along the processing surface 7 or In the case of a flat shape, smoothing processing or mirror surface processing can be performed.
【００１８】本発明における加工用電極２の種類として
は、切断加工及び溝切り加工が行える電界集中型と、平
滑化加工若しくは鏡面加工が行える電界分散型に大別さ
れ、更にそれぞれにおいて中性ラジカル４を被加工物１
と加工用電極２間で発生させる外部発生型と、加工用電
極２の内部で発生させる内部発生型に分けることができ
る。本発明は、前述の何れの種類にも適応するものであ
る。以下にその具体例を述べる。The types of the processing electrode 2 in the present invention are roughly classified into an electric field concentration type capable of cutting and grooving and an electric field dispersion type capable of smoothing or mirror surface processing. 4 for work piece 1
Can be divided into an external generation type generated between the processing electrode 2 and an internal generation type generated inside the processing electrode 2. The present invention is applicable to any of the types described above. A specific example will be described below.
【００１９】先ず、電界集中型の加工用電極２につい
て、図２〜図６に基づいて説明する。図２〜図４に示し
たものは外部発生型であり、図２に示した加工用電極２
は、単一構造の先細電極の内部中央にガス供給路８を設
け、その先端に該ガス供給路８に連続した噴出口９を形
成し、そしてガス供給路８にはガス供給孔12を形成し、
該ガス供給孔12に供給パイプ13を接続し、更に先端の外
周には加工に供された後の反応ガス３等の雰囲気気体及
び加工によって発生した揮発性物質６を加工面７から速
やかに除去するためにガス回収部14を設け、それにガス
回収孔15を設けるとともに、回収パイプ16を接続したも
のである。この加工用電極２の全体形状は、針状形状と
なしても図示した断面形状で長尺となしてもよい。First, the electric field concentration type working electrode 2 will be described with reference to FIGS. The electrodes shown in FIGS. 2 to 4 are of the external generation type, and the processing electrode 2 shown in FIG.
Provides a gas supply passage 8 in the center of the inside of a single-structured tapered electrode, forms a jet port 9 continuous with the gas supply passage 8 at the tip thereof, and forms a gas supply hole 12 in the gas supply passage 8. Then
A supply pipe 13 is connected to the gas supply hole 12, and an atmosphere gas such as a reaction gas 3 after being subjected to processing and a volatile substance 6 generated by the processing are quickly removed from the processing surface 7 on the outer periphery of the tip. For this purpose, a gas recovery unit 14 is provided, a gas recovery hole 15 is provided therein, and a recovery pipe 16 is connected. The overall shape of the processing electrode 2 may be needle-like or elongated in the illustrated cross-sectional shape.
【００２０】また、図３及び図４は主に被加工物１を切
断する場合に用いる偏平なブレード型の加工用電極２の
実施例を示している。これは切断の進行につれて加工溝
が深くなり、通常のガス供給手段では反応ガスを含む雰
囲気気体の供給が十分に行えなくなるので、偏平な加工
用電極２の内部にガス供給路８とガス回収路17を設けた
ものである。Further, FIGS. 3 and 4 show an embodiment of a flat blade type machining electrode 2 which is mainly used for cutting the workpiece 1. This is because the working groove becomes deeper as the cutting progresses, and the atmospheric gas containing the reaction gas cannot be sufficiently supplied by the normal gas supply means. Therefore, the gas supply path 8 and the gas recovery path are provided inside the flat machining electrode 2. 17 is provided.
【００２１】更に詳しくは、図３の加工用電極２は、中
央に偏平なブレード電極18を配し、その両側からスペー
サー19，…を介在させて偏平な表面板20，20を固定し、
前記ブレード電極18と一方の表面板20との間隙をガス供
給路８となし、他方の表面板20との間隙をガス回収路17
となした構造のものである。この場合、ブレード電極18
の先端は両表面板20，20より突出させている。More specifically, in the machining electrode 2 of FIG. 3, a flat blade electrode 18 is arranged at the center, and spacers 19 are inserted from both sides thereof to fix the flat surface plates 20, 20.
The gap between the blade electrode 18 and the one surface plate 20 serves as the gas supply path 8, and the gap between the other surface plate 20 and the gas recovery path 17
The structure is In this case, the blade electrode 18
The tip of is projected from both surface plates 20, 20.
【００２２】また、図４の加工用電極２は、偏平な中間
板21の両側に基端から先端方向へ向けて多数の凹溝22，
…を形成し、その両側から表面板20，20を接合し、凹溝
22と表面板20で区画されたガス供給路８とガス回収路17
を形成し、そして中間板21の先端に沿って反応ガス及び
中性ラジカルに対して耐食性を有する材料をコーティン
グした棒状電極23を固定したものであり、該電極の両側
には前記ガス供給路８及びガス回収路17が開口した構造
のものである。ここで、前記中間板21と表面板20はセラ
ミックス製としている。また、この偏平な加工用電極２
のガス供給路８及びガス回収路17には適宜な方法によっ
てそれぞれ供給パイプ及び回収パイプが接続されてい
る。The machining electrode 2 shown in FIG. 4 has a large number of grooves 22 on both sides of the flat intermediate plate 21 from the base end toward the tip end.
..., and join the face plates 20, 20 from both sides of the
Gas supply path 8 and gas recovery path 17 divided by 22 and surface plate 20
And a rod-shaped electrode 23 coated with a material having corrosion resistance to reaction gas and neutral radicals is fixed along the tip of the intermediate plate 21, and the gas supply passage 8 is provided on both sides of the electrode. In addition, the gas recovery path 17 is open. Here, the intermediate plate 21 and the surface plate 20 are made of ceramics. In addition, this flat processing electrode 2
A supply pipe and a recovery pipe are connected to the gas supply path 8 and the gas recovery path 17, respectively, by an appropriate method.
【００２３】図５及び図６は内部発生型の加工用電極２
を示している。図５に示した加工用電極２は、内部にガ
ス供給路８を有する外部電極10と、そのガス供給路８の
中心部に高電圧を印加し、電界が集中する先端形状を有
する内部電極11とからなり、内部電極11は中空の外部電
極10の内部にガイシ等の絶縁体24を介して挿入されてい
る。そして、外部電極10を接地するとともに、内部電極
11に高周波電圧を印加し、両電極間に高電界が発生する
ようになしている。外部電極10は、先端部にテーパー状
に形成したノズル部25とその中心にガス供給路８に連続
する噴出口９を設けたものであり、前記内部電極11の先
端を噴出口９に臨むノズル部25に近接させて配してい
る。また、外部電極10内のガス供給路８に反応ガスを含
む雰囲気気体を供給すべく、該外部電極10の側面又は絶
縁体24に開口したガス供給孔12に伸縮自在且つ屈曲自在
な供給パイプ13を接続している。該供給パイプ13から雰
囲気気体がガス供給路８に供給されると、内部電極11の
先端と外部電極10のノズル部25の内面間でプラズマが発
生し、中性ラジカルが生成される。雰囲気気体の連続的
な供給により前記噴出口９から中性ラジカルを含む雰囲
気気体が被加工物１の加工面７に供給されて前述の如く
加工が進行する。また、前記同様に外部電極10のノズル
部25の周囲に先端側を開口したガス回収部14を設け、こ
のガス回収部14に形成したガス回収孔15に前記供給パイ
プ13と同様な回収パイプ16が接続されている。尚、この
加工用電極２は、スポット状の加工をする場合には円柱
状に形成し、広い面積を同時に加工する場合には、図示
した断面形状で長尺に形成するのであり、その形状は特
に限定されるものではない。FIGS. 5 and 6 show an internally generated processing electrode 2
Is shown. The processing electrode 2 shown in FIG. 5 has an external electrode 10 having a gas supply passage 8 inside, and an internal electrode 11 having a tip shape in which a high voltage is applied to the center of the gas supply passage 8 to concentrate an electric field. The internal electrode 11 is inserted into the hollow external electrode 10 via an insulator 24 such as insulator. Then, the outer electrode 10 is grounded and the inner electrode is
A high frequency voltage is applied to 11 so that a high electric field is generated between both electrodes. The external electrode 10 is provided with a nozzle portion 25 formed in a tapered shape at the tip and a jet port 9 continuous to the gas supply passage 8 at the center thereof, and a nozzle in which the tip of the internal electrode 11 faces the jet port 9. It is placed close to section 25. Further, in order to supply the atmospheric gas containing the reaction gas to the gas supply passage 8 in the external electrode 10, the supply pipe 13 which can be expanded and contracted and bent into the gas supply hole 12 opened in the side surface of the external electrode 10 or the insulator 24. Are connected. When the atmospheric gas is supplied from the supply pipe 13 to the gas supply passage 8, plasma is generated between the tip of the inner electrode 11 and the inner surface of the nozzle portion 25 of the outer electrode 10 to generate neutral radicals. By continuously supplying the atmospheric gas, the atmospheric gas containing the neutral radicals is supplied from the jet port 9 to the processing surface 7 of the workpiece 1, and the processing proceeds as described above. Further, similarly to the above, a gas recovery part 14 having an open end is provided around the nozzle part 25 of the external electrode 10, and a recovery pipe 16 similar to the supply pipe 13 is provided in a gas recovery hole 15 formed in the gas recovery part 14. Are connected. The machining electrode 2 is formed in a cylindrical shape for spot-like machining, and is formed long in the illustrated cross-sectional shape for simultaneous machining of a large area. It is not particularly limited.
【００２４】以上示した加工用電極２の構造は、反応ガ
スと不活性ガスを同時に供給し、同一領域で不活性ガス
によるプラズマと反応ガスに基づく中性ラジカルを生成
するものであるが、図６に示した加工用電極２のよう
に、先ず不活性ガスによるプラズマを発生させ、それを
被加工物１の加工面７方向へ移送し、プラズマの発生領
域とは異なった領域で反応ガスと衝突させて中性ラジカ
ルを生成するものである。更に詳しくは、図５で示した
加工用電極２と略同様な構造に加え、噴出口９より所定
距離だけ内方位置で、不活性ガスの供給パイプ13から供
給した不活性ガスをノズル部25の内面と内部電極11の先
端間でプラズマ化して電離及び励起し、それを噴出口９
側へそのガス圧によって移送し、該噴出口９の直前に設
けた反応空間26にフレキシブルな反応ガス供給パイプ27
及びガス導入管28を通して供給した反応ガスと衝突さ
せ、中性ラジカルを発生させて被加工物１の加工面７に
供給するようになした構造のものである。このようにす
れば、発生したプラズマが加工面７に接触する恐れがな
く、加工面７の温度上昇が殆ど生じないので、より低温
での加工が可能となる。また、プラズマ中の電子を捕獲
し、プラズマ状態に対して悪影響を及ぼす反応ガスを用
いる場合、例えばハロゲンガスを用いる場合には効果的
である。In the structure of the processing electrode 2 shown above, a reactive gas and an inert gas are simultaneously supplied to generate plasma by the inert gas and neutral radicals based on the reactive gas in the same region. Like the machining electrode 2 shown in FIG. 6, first, plasma is generated by an inert gas, and the plasma is transferred toward the machining surface 7 of the workpiece 1 to generate a reaction gas in a region different from the plasma generation region. It collides with each other to generate neutral radicals. More specifically, in addition to the structure similar to that of the processing electrode 2 shown in FIG. 5, the inert gas supplied from the inert gas supply pipe 13 at a position inside the jet port 9 by a predetermined distance is used for the nozzle portion 25. Between the tip of the inner electrode 11 and the inner surface of the plasma to generate ionization and excitation,
To the side by the gas pressure, and a flexible reaction gas supply pipe 27 is provided in the reaction space 26 provided immediately before the ejection port 9.
And the reaction gas supplied through the gas introduction pipe 28 to collide with the reaction gas to generate neutral radicals and supply the neutral radicals to the processing surface 7 of the workpiece 1. By doing so, the generated plasma is unlikely to come into contact with the processed surface 7, and the temperature of the processed surface 7 hardly rises, so that the processing can be performed at a lower temperature. Further, it is effective when a reaction gas that traps electrons in plasma and adversely affects the plasma state is used, for example, when a halogen gas is used.
【００２５】次に、電界分散型の例を図７及び図８に基
づいて説明する。図７は外部発生型の加工用電極２であ
り、偏平中空に形成され、その内部にガス供給路８を形
成し、被加工物１の加工面７と対面する面を平坦面29と
なし、該平坦面29にはガス供給路８に連続した多数の噴
出口９，…を形成している。該加工用電極２の適所に接
続した供給パイプ13とガス供給孔12を通して反応ガスを
含む雰囲気気体を供給すると、ガス供給路８を通って噴
出口９，…から均一に加工ギャップに供給され、その状
態で加工用電極２と被加工物１間に高電圧を印加する
と、平坦面29と被加工物１との間でプラズマが発生し、
そして中性ラジカルが生成され、平滑化加工若しくは鏡
面加工が進行する。尚、図示しないが前述したガス回収
部14と同様な回収部を適宜設けている。Next, an example of the electric field dispersion type will be described with reference to FIGS. 7 and 8. FIG. 7 shows an externally generated machining electrode 2, which is formed in a flat hollow shape, has a gas supply passage 8 formed therein, and has a flat surface 29 facing the processing surface 7 of the workpiece 1. On the flat surface 29, a large number of jet ports 9, ... Which are continuous with the gas supply passage 8 are formed. When an atmospheric gas containing a reaction gas is supplied through a supply pipe 13 and a gas supply hole 12 which are connected to the processing electrode 2 at appropriate positions, the gas is uniformly supplied to the processing gap through the gas supply passage 8 from the jet ports 9 ,. When a high voltage is applied between the machining electrode 2 and the workpiece 1 in that state, plasma is generated between the flat surface 29 and the workpiece 1,
Then, neutral radicals are generated, and smoothing processing or mirror surface processing proceeds. Although not shown, a recovery unit similar to the gas recovery unit 14 described above is appropriately provided.
【００２６】また、図８は外部電極10と内部電極11から
なる内部発生型の加工用電極２であり、図７に示したも
のに加え、外部電極10の平坦面29と対向する側面の一部
又は全部を絶縁体24となし、該絶縁体24を通してガス供
給路８内に内部電極11の先端部を内装したものである。
内部電極11の先端部には電界を分散する平板部30を有
し、該平板部30を平坦面29の内面に所定ギャップを隔て
て平行に配したものである。そして、外部電極10に接続
した供給パイプ13とガス供給孔12を通して反応ガスを含
む雰囲気気体を供給し、外部電極10と内部電極11間に高
周波電圧を印加すると、平坦面29と平板部30間でプラズ
マが発生し、その領域で中性ラジカルが生成され、噴出
口９，…から加工面７に供給されて平滑化加工若しくは
鏡面加工が進行する。尚、図示しないが前述したガス回
収部14と同様な回収部を適宜設けている。FIG. 8 shows an internally generated processing electrode 2 composed of an external electrode 10 and an internal electrode 11. One of the side surfaces of the external electrode 10 facing the flat surface 29 is shown in addition to the one shown in FIG. A part or the whole is formed as an insulator 24, and the tip portion of the internal electrode 11 is provided inside the gas supply passage 8 through the insulator 24.
A flat plate portion 30 that disperses an electric field is provided at the tip of the internal electrode 11, and the flat plate portion 30 is arranged parallel to the inner surface of the flat surface 29 with a predetermined gap. Then, an atmosphere gas containing a reaction gas is supplied through the supply pipe 13 and the gas supply hole 12 connected to the external electrode 10, and a high-frequency voltage is applied between the external electrode 10 and the internal electrode 11. At this point, plasma is generated, and neutral radicals are generated in that region, and the neutral radicals are supplied to the machined surface 7 from the ejection ports 9 ... And the smoothing processing or mirror surface processing proceeds. Although not shown, a recovery unit similar to the gas recovery unit 14 described above is appropriately provided.
【００２７】以上、各種の加工用電極２の構造について
述べたが、外部発生型のものは、被加工物１と加工用電
極２の間隔、即ち加工ギャップが変化するとプラズマの
発生状態が異なり、加工速度及び加工量に変化が生じる
が、内部発生型のものは電極内部で常に同一条件でプラ
ズマを発生するとともに、中性ラジカルを生成し、その
中性ラジカルを加工面７に一定密度で供給できるので、
加工速度及び加工量を一定に保つことができ、この点で
外部発生型に勝っていると言える。また、プラズマの発
生に高周波を用いる場合、被加工物１の材質によっては
この高周波が吸収され、加熱される場合があるので、こ
の場合には特に内部発生型が適しているのである。The structure of the various processing electrodes 2 has been described above. However, in the external generation type, the plasma generation state changes when the distance between the workpiece 1 and the processing electrode 2, that is, the processing gap changes. Although the processing speed and processing amount change, the internally generated type always generates plasma inside the electrode under the same conditions and also generates neutral radicals, and supplies the neutral radicals to the processed surface 7 at a constant density. Because you can
The processing speed and processing amount can be kept constant, and it can be said that this is superior to the external generation type in this point. When a high frequency wave is used to generate plasma, the high frequency wave may be absorbed and heated depending on the material of the workpiece 1, and in this case, the internal generation type is particularly suitable.
【００２８】また、前記被加工物１と加工用電極２との
加工ギャップの調節は、その一方を固定し、他方をサー
ボモータで駆動するＸＹＺ軸ステージに固定し、Ｚ軸ス
テージの移動によってリジッドに行えるが、噴出口９か
ら加工面７へ噴出する雰囲気気体の動圧による加工用電
極２の浮上で行うことも可能である。即ち、供給パイプ
13によって供給するガス圧を調節し、噴出口９からの雰
囲気気体の噴出圧力で気体軸受的に加工ギャップの調節
を行うことができる。The machining gap between the workpiece 1 and the machining electrode 2 is adjusted by fixing one of them and fixing the other to an XYZ axis stage driven by a servomotor, and moving the Z axis stage to make it rigid. However, it is also possible to float the machining electrode 2 by the dynamic pressure of the atmospheric gas ejected from the ejection port 9 to the machining surface 7. Ie supply pipe
The gas pressure supplied by 13 can be adjusted, and the working gap can be adjusted like a gas bearing by the jet pressure of the atmospheric gas from the jet port 9.
【００２９】次に、加工用電極２に用いる材質に付いて
述べる。ラジカル反応による無歪精密加工方法では、フ
ッ素系（ＳＦ6 、ＣＦ4 ）、塩素系（Ｃｌ2 ）等の腐食
性ガス雰囲気で加工が行われるため、加工用電極２には
耐食性のある適切な材料を用いる必要がある。尚、従来
の放電加工機のワイヤー電極として利用されてきたタン
グステンは、フッ素に対して容易に腐食され、加工時間
をあまり長くとれない欠点がある。Next, the material used for the processing electrode 2 will be described. In the strain-free precision processing method by radical reaction, since the processing is performed in a corrosive gas atmosphere such as a fluorine-based (SF 6 , CF 4 ) or chlorine-based (Cl 2 ), the processing electrode 2 has an appropriate corrosion resistance. It is necessary to use materials. Incidentally, tungsten, which has been used as a wire electrode of a conventional electric discharge machine, has a drawback that it is easily corroded by fluorine and the machining time cannot be taken very long.
【００３０】フッ素に対して耐食性を示す材料として
は、例えばＡｌがある。ワイヤー電極として用いる場合
には、Ａｌは機械的強度が弱いため実用的でないが、上
述した構造の加工用電極２には十分に使用に耐える。耐
食性材料としてはＡｌＦ3 、ＢａＦ2 、ＣａＦ2 、Ｍｇ
Ｆ2 等が挙げられるが、これらフッ化物には導電性がな
く、そのものでは電極として使えないが、タングステ
ン、モリブデン等の表面にこれらのフッ化物をコーティ
ング及びディップすれば電極として使用できる。また、
Ａｌ2 Ｏ3 をコーティングすることも可能である。As a material showing corrosion resistance to fluorine, there is Al, for example. When used as a wire electrode, Al is not practical because it has low mechanical strength, but it is sufficiently durable for the working electrode 2 having the above-described structure. AlF 3 , BaF 2 , CaF 2 , Mg as the corrosion resistant material
F 2 and the like can be mentioned, but these fluorides have no conductivity and cannot be used as electrodes by themselves, but they can be used as electrodes by coating and dipping these fluorides on the surface of tungsten, molybdenum or the like. Also,
It is also possible to coat with Al 2 O 3 .
【００３１】電極材料としては、フッ素系の反応ガスに
対しては、前述の他に、反応生成物の蒸気圧が低い元
素、Ｎｉ、Ｎｉ−Ｃｒ、Ｍｇ、Ｍｎ、Ｃａ、Ｃｅ、Ｂ
ａ、Ｓｒ等があり、塩素系の反応ガスに対しては、Ｔ
ｉ、Ｎｉ、Ｎｉ−Ｃｒ、インコネル、モネル、グラファ
イト（Ｃ）を用いることができる。また、電極のコーテ
ィングに関しては、低蒸気圧のフッ化物、塩化物のコー
ティング（プラズマＣＶＤ，イオンプレーティング，真
空蒸着）や、表面処理（プラズマ酸化，熱酸化，フッ
化，塩化）や、複合電極（不活性元素＋高張力，高融点
材料）、例えばＷの表面にＮｉを電気メッキしたり、Ｗ
又はＭｏの表面にカーボン（Ｃ）をプラズマＣＶＤ等に
よる処理、反応ガス供給用高蒸気圧フッ化物（ＮａＨＦ
2 ，ＫＨＦ2 ，ＮｂＦ5 ，ＢｒＦ5 ，ＩＦ5 ，ＨＦ等）
又は塩化物（ＨＣｌ，ＣＣｌ4 ，Ｓ2 Ｃｌ2 ，ＳＣｌ2
等）のコーティング及びディップしたものが使用でき
る。As the electrode material, for the fluorine-based reaction gas, in addition to the above, elements having a low vapor pressure of reaction products, such as Ni, Ni-Cr, Mg, Mn, Ca, Ce and B.
a, Sr, etc., and T for chlorine-based reaction gas
i, Ni, Ni-Cr, Inconel, Monel, and graphite (C) can be used. Regarding electrode coating, low vapor pressure fluoride and chloride coating (plasma CVD, ion plating, vacuum deposition), surface treatment (plasma oxidation, thermal oxidation, fluoride, chloride), and composite electrodes (Inert element + high tension, high melting point material), for example, Ni is electroplated on the surface of W or W
Alternatively, treatment of carbon (C) on the surface of Mo by plasma CVD or the like, high vapor pressure fluoride for reaction gas supply (NaHF)
2 , KHF 2 , NbF 5 , BrF 5 , IF 5 , HF, etc.)
Or chlorides (HCl, CCl 4 , S 2 Cl 2 , SCl 2
Etc.) coating and dipping can be used.
【００３２】[0032]
【発明の効果】以上にしてなる本発明の加工用電極によ
れば、電極に直流電圧若しくは交流電圧を印加し、その
電界によって反応ガスに基づく中性ラジカルを生成し、
該中性ラジカルと被加工物の加工面を構成する原子又は
分子とのラジカル反応によって生成した揮発性物質を気
化させて除去し、加工を進行させてなる無歪精密加工装
置の加工用電極において、内部に加工面側へ開口した反
応ガスを含む雰囲気気体を供給するガス供給路を設けて
なるので、切断加工及び溝切り加工における加工溝の底
部の加工領域、及び鏡面加工における平板状の電極と被
加工物の加工面との加工ギャップ内であってその中央部
の加工領域にも常に必要十分な一定量の反応ガスを供給
することができ、又は反応ガスに基づく一定密度の中性
ラジカルを供給することができる。従って、切断加工及
び溝切り加工の場合にも常に一定の加工速度で行うこと
ができ、また鏡面加工の場合にも電極の周縁部と中央部
での加工速度を一定にして加工量の均一化を図り、加工
ムラを全く生じさせず、平坦に加工できるのである。According to the processing electrode of the present invention as described above, a direct current voltage or an alternating current voltage is applied to the electrode, and the electric field generates neutral radicals based on the reaction gas,
In a processing electrode of a strain-free precision processing apparatus, which vaporizes and removes a volatile substance generated by a radical reaction between the neutral radical and an atom or a molecule that constitutes a processing surface of a workpiece, and advances the processing. Since a gas supply path for supplying an atmosphere gas containing a reaction gas opened to the processing surface side is provided inside, a processing area at the bottom of the processing groove in cutting processing and grooving processing, and a flat plate-shaped electrode in mirror surface processing It is possible to always supply a necessary and sufficient constant amount of reaction gas to the processing area in the center of the processing gap between the workpiece and the processed surface of the work piece, or a constant density of neutral radicals based on the reaction gas. Can be supplied. Therefore, even in the case of cutting and grooving, it is possible to always perform at a constant processing speed, and even in the case of mirror finishing, the processing speed is constant at the peripheral and central portions of the electrode to make the processing amount uniform. Therefore, it is possible to perform flat processing without causing any processing unevenness.
【００３３】また、電極内部にガス供給路を形成すると
ともに、先端を電界が集中する針状形状となすことによ
り、切断加工、溝切り加工又は任意形状の加工を行うこ
とができ、また電極内部にガス供給路を形成するととも
に、加工面側を電界が分散する平面形状となし且つガス
供給路から加工面側へ開口した多数の噴出口を形成する
ことにより、平滑化加工若しくは鏡面加工を行うことが
できる。Further, by forming a gas supply path inside the electrode and forming the tip into a needle-like shape in which the electric field is concentrated, cutting processing, grooving processing or processing of an arbitrary shape can be performed. In addition to forming a gas supply path on the work surface, the work surface has a planar shape in which an electric field is dispersed, and a large number of ejection openings opened from the gas supply path to the work surface are formed to perform smoothing processing or mirror surface processing. be able to.
【００３４】更に、加工用電極をガス供給路を有する外
部電極とその内部に絶縁して配した内部電極より構成す
ることにより、加工用電極の内部、即ち内部電極と外部
電極間で中性ラジカルを生成して、それを先端から加工
面に供給するので、被加工物が導体、絶縁体若しくは半
導体の別にかかわらず、前記外部電極と内部電極間に電
圧を印加することにより常に一定の条件で加工すること
ができ、またプラズマの発生に高周波を用いる場合、高
周波を吸収する材質の被加工物も加熱することなく加工
できるといった顕著な効果を有する。Further, by forming the processing electrode by an external electrode having a gas supply path and an internal electrode insulated inside thereof, a neutral radical is generated inside the processing electrode, that is, between the internal electrode and the external electrode. Is generated and supplied to the processed surface from the tip, regardless of whether the workpiece is a conductor, an insulator or a semiconductor, by applying a voltage between the external electrode and the internal electrode, it is always possible to maintain a constant condition. It has a remarkable effect that it can be processed, and that when a high frequency wave is used to generate plasma, a work piece made of a material that absorbs the high frequency wave can be processed without heating.
【図１】本発明の加工原理を示す説明用概念図FIG. 1 is a conceptual diagram for explaining the processing principle of the present invention.
【図２】電界集中型且つ外部発生型の加工用電極を示す
簡略断面図FIG. 2 is a simplified cross-sectional view showing an electric field concentration type and external generation type processing electrode.
【図３】電界集中型且つ外部発生型のブレード状の加工
用電極を示す簡略断面図FIG. 3 is a simplified cross-sectional view showing an electric field concentration type and external generation type blade-shaped processing electrode.
【図４】電界集中型且つ外部発生型のブレード状の加工
用電極の他の実施例を示す簡略断面図FIG. 4 is a simplified cross-sectional view showing another embodiment of a blade-shaped processing electrode of electric field concentration type and external generation type.
【図５】電界集中型且つ内部発生型の加工用電極を示す
簡略断面図FIG. 5 is a simplified cross-sectional view showing a processing electrode of electric field concentration type and internal generation type.
【図６】電界集中型且つ内部発生型の加工用電極の他の
実施例を示す簡略断面図FIG. 6 is a simplified cross-sectional view showing another embodiment of a processing electrode of electric field concentration type and internal generation type.
【図７】電界分散型且つ外部発生型の加工用電極を示す
簡略断面図FIG. 7 is a simplified cross-sectional view showing an electric field dispersion type and external generation type processing electrode.
【図８】電界分散型且つ内部発生型の加工用電極を示す
簡略断面図FIG. 8 is a simplified cross-sectional view showing an electric field dispersion type and internally generating type processing electrode.
１ 被加工物 ２ 加工用電極 ３ 反応ガス ４ 中性ラジカル ５ 原子又は分子 ６ 揮発性物質 ７ 加工面 ８ ガス供給路 ９ 噴出口 10 外部電極 11 内部電極 12 ガス供給孔 13 供給パイプ 14 ガス回収部 15 ガス回収孔 16 回収パイプ 17 ガス回収路 18 ブレード電極 19 スペーサー 20 表面板 21 中間板 22 凹溝 23 棒状電極 24 絶縁体 25 ノズル部 26 反応空間 27 供給パイプ 28 ガス導入管 29 平坦面 30 平板部 1 Workpiece 2 Processing Electrode 3 Reactive Gas 4 Neutral Radical 5 Atom or Molecule 6 Volatile Substance 7 Processing Surface 8 Gas Supply Channel 9 Jet Port 10 External Electrode 11 Internal Electrode 12 Gas Supply Hole 13 Supply Pipe 14 Gas Recovery Section 15 Gas recovery hole 16 Recovery pipe 17 Gas recovery path 18 Blade electrode 19 Spacer 20 Surface plate 21 Intermediate plate 22 Recessed groove 23 Rod electrode 24 Insulator 25 Nozzle part 26 Reaction space 27 Supply pipe 28 Gas introduction pipe 29 Flat surface 30 Flat plate part
Claims (5)
し、その電界によって反応ガスに基づく中性ラジカルを
生成し、該中性ラジカルと被加工物の加工面を構成する
原子又は分子とのラジカル反応によって生成した揮発性
物質を気化させて除去し、加工を進行させてなる無歪精
密加工装置の加工用電極において、内部に加工面側へ開
口した反応ガスを含む雰囲気気体を供給するガス供給路
を設けたことを特徴とする加工用電極。1. A direct-current voltage or an alternating-current voltage is applied to an electrode, a neutral radical based on a reaction gas is generated by the electric field, and the neutral radical is a radical of an atom or a molecule constituting a machined surface of a workpiece. A gas supply that supplies an atmospheric gas containing a reaction gas that opens inside the machining surface of a machining electrode of a strain-free precision machining device that vaporizes and removes the volatile substances generated by the reaction and advances the machining. A processing electrode characterized by having a passage.
む雰囲気気体を供給するガス供給路を形成するととも
に、先端を電界が集中する針状形状となし、加工面との
間で中性ラジカルを生成してなる請求項１記載の加工用
電極。2. A gas supply path for supplying an atmosphere gas containing a reaction gas, which is open toward the processing surface, is formed inside, and the tip is formed into a needle-like shape in which an electric field is concentrated, and is neutral with the processing surface. The processing electrode according to claim 1, wherein radicals are generated.
内部に加工面側へ開口した反応ガスを含む雰囲気気体を
供給するガス供給路を形成するとともに、該ガス供給路
内に電界集中型の内部電極を絶縁して配し、該内部電極
と外部電極間で中性ラジカルを生成してなる請求項１記
載の加工用電極。3. A gas supply path for supplying an atmospheric gas containing a reaction gas, which is opened to the processing surface side, is formed inside the external electrode having the processing surface side in the shape of a needle, and an electric field is formed in the gas supply path. 2. The processing electrode according to claim 1, wherein the concentrated internal electrodes are insulated and arranged, and neutral radicals are generated between the internal electrodes and the external electrodes.
するガス供給路を形成するとともに、該ガス供給路から
加工面側へ開口した多数の噴出口を形成し、加工面側を
電界が分散する平面形状となし、加工面との間で中性ラ
ジカルを生成してなる請求項１記載の加工用電極。4. A gas supply path for supplying an atmospheric gas containing a reaction gas is formed inside, and a large number of ejection openings are formed from the gas supply path to the processing surface side, and the electric field is dispersed on the processing surface side. The processing electrode according to claim 1, wherein the processing electrode has a flat shape and a neutral radical is generated between the processing surface and the processing surface.
内部に反応ガスを含む雰囲気気体を供給するガス供給路
を形成するとともに、該ガス供給路から加工面側へ開口
した多数の噴出口を形成し、また該ガス供給路内に電界
分散型の内部電極を絶縁して配し、該内部電極と外部電
極間で中性ラジカルを生成してなる請求項１記載の加工
用電極。5. A gas supply path for supplying an atmospheric gas containing a reaction gas is formed inside an external electrode having a flat surface on the processing surface side, and a large number of jets opened from the gas supply path to the processing surface side. The processing electrode according to claim 1, wherein an outlet is formed, and an electric field dispersion type internal electrode is insulated and arranged in the gas supply path, and neutral radicals are generated between the internal electrode and the external electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7446591A JPH05234942A (en) | 1991-03-13 | 1991-03-13 | Electrode for machining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7446591A JPH05234942A (en) | 1991-03-13 | 1991-03-13 | Electrode for machining |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05234942A true JPH05234942A (en) | 1993-09-10 |
Family
ID=13548033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7446591A Pending JPH05234942A (en) | 1991-03-13 | 1991-03-13 | Electrode for machining |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05234942A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012126584A (en) * | 2010-12-13 | 2012-07-05 | Sekisui Chem Co Ltd | End treating method and apparatus for glass plate |
-
1991
- 1991-03-13 JP JP7446591A patent/JPH05234942A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012126584A (en) * | 2010-12-13 | 2012-07-05 | Sekisui Chem Co Ltd | End treating method and apparatus for glass plate |
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