JPH0522984Y2 - - Google Patents
Info
- Publication number
- JPH0522984Y2 JPH0522984Y2 JP1988131351U JP13135188U JPH0522984Y2 JP H0522984 Y2 JPH0522984 Y2 JP H0522984Y2 JP 1988131351 U JP1988131351 U JP 1988131351U JP 13135188 U JP13135188 U JP 13135188U JP H0522984 Y2 JPH0522984 Y2 JP H0522984Y2
- Authority
- JP
- Japan
- Prior art keywords
- contact
- attenuation
- contacts
- switched
- stray capacitance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000013016 damping Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
Landscapes
- Attenuators (AREA)
Description
【考案の詳細な説明】
〈産業上の利用分野〉
本考案は、高周波用減衰器に関し、特に切換ス
イツチを備え、この切換スイツチを切り換えない
状態では、減衰量が０で、切換スイツチを切り換
えると、所定の減衰量が得られる切換スイツチを
備えた高周波用減衰器に関する。[Detailed description of the invention] <Industrial field of application> The present invention relates to a high frequency attenuator, in particular, it is equipped with a changeover switch, and when the changeover switch is not turned on, the attenuation is 0, and when the changeover switch is turned on, the attenuation amount is 0. , relates to a high frequency attenuator equipped with a changeover switch that provides a predetermined amount of attenuation.
〈従来技術〉
従来、上記のような切換スイツチを備えた高周
波用減衰器には、例えばブースタの入力側に設け
られ、入力信号のレベルが予め定めたレベルより
も小さい場合には、そのレベルの信号をそのまま
通過させ、大きい場合に切換スイツチを操作し
て、入力信号を予め定めた減衰量で減衰させるも
のがある。このような減衰器の一例を第６図に示
す。同図において、２は連動切換スイツチで、接
触子４ａ，４ｂを有し、その接触子４ａが接点６
ａに切換られているとき、接触子４ｂが接点６ｂ
に切換られ、接触子４ａが接点８ａに切換られて
いるとき、接触子４ｂが接点８ｂに切換られるよ
うに構成されている。この連動切換スイツチ２に
は、例えばスライドスイツチが用いられる。この
連動切換スイツチ２の接点６ａ，６ｂは直結さ
れ、接点８ａ，８ｂ間には、π型の抵抗減衰回路
１０が設けられている。なお、この抵抗減衰回路
１０を構成している各抵抗器１０ａ乃至１０ｃの
値は、必要とされる減衰量に応じて設定される。<Prior Art> Conventionally, a high-frequency attenuator equipped with a changeover switch as described above is provided, for example, on the input side of a booster, and when the level of the input signal is lower than a predetermined level, the level is changed. Some devices allow the signal to pass through as is, and when the signal is large, operate a switch to attenuate the input signal by a predetermined attenuation amount. An example of such an attenuator is shown in FIG. In the same figure, 2 is an interlocking changeover switch, which has contacts 4a and 4b, and the contact 4a is the contact 6.
a, the contact 4b is switched to the contact 6b
When the contact 4a is switched to the contact 8a, the contact 4b is switched to the contact 8b. For example, a slide switch is used as the interlocking changeover switch 2. Contacts 6a and 6b of this interlocking changeover switch 2 are directly connected, and a π-type resistance attenuation circuit 10 is provided between contacts 8a and 8b. Note that the values of each of the resistors 10a to 10c constituting this resistance attenuation circuit 10 are set according to the required amount of attenuation.
この高周波用減衰器では、接触子４ａに供給さ
れた信号のレベルが所定のレベルよりも小さい
と、接触子４ａを接点６ａ側に切り換えると共
に、接触子４ｂを接点６ｂ側に切り換えて、その
信号を接触子４ａ、接点６ａ，６ｂ、接触子４ｂ
を介してブースタの高周波増幅回路（図示せず）
に供給する。即ち、減衰は行なわれない。また、
接触子４ａに供給される信号のレベルが所定レベ
ルよりも大きいと、接触子４ａを接点８ａ側に切
り換えると共に、接触子４ｂを接点８ｂ側に切り
換え、信号を接触子４ａ、接点８ａを介して減衰
回路１０に供給して、所定の減衰量に減衰させ、
接点８ｂ、接触子４ｂを介して高周波増幅回路に
供給する。即ち、この高周波用減衰器では減衰量
を２段階に切換られる。 In this high frequency attenuator, when the level of the signal supplied to the contact 4a is lower than a predetermined level, the contact 4a is switched to the contact 6a side, and the contact 4b is switched to the contact 6b side, and the signal is Contact 4a, contacts 6a, 6b, contact 4b
Through the booster high frequency amplification circuit (not shown)
supply to. That is, no attenuation takes place. Also,
When the level of the signal supplied to the contact 4a is higher than a predetermined level, the contact 4a is switched to the contact 8a side, and the contact 4b is switched to the contact 8b side, and the signal is passed through the contact 4a and the contact 8a. supplying it to the attenuation circuit 10 and attenuating it to a predetermined amount of attenuation;
It is supplied to the high frequency amplification circuit via the contact point 8b and the contactor 4b. That is, in this high frequency attenuator, the amount of attenuation can be switched in two stages.
〈考案が解決しようとする課題〉
このような高周波用減衰器では、切換スイツチ
２の接点８ａ，８ｂ間や接点６ａ，６ｂ間に浮遊
容量を有している。第６図では、接点８ａ，８ｂ
間の浮遊容量を符号１２で示す。接点６ａ，６ｂ
間の浮遊容量は、両接点６ａ，６ｂが直結されて
いるので、無視することができるが、接点８ａ，
８ｂ間の浮遊容量は、抵抗減衰回路１０の抵抗器
１０ｂに並列に接続された状態であるので、減衰
量に影響を与える。接触子４ａに供給される信号
の周波数帯が低い場合は、浮遊容量のリアクタン
スが小さいので、影響を無視することができる
が、周波数帯がUHF帯以上になると、リアクタ
ンスが大きくなるので、影響がでて、特に減衰量
を大きくした場合に、顕著である。第７図は、第
６図の高周波用減衰器の接触子４ａ，４ｂをそれ
ぞれ接点８ａ，８ｂに接続した場合の減衰量対周
波数特性を示したもので、目標とする減衰量が−
10dB乃至−20dBとなるように抵抗減衰回路１０
を設計した場合、周波数が高くなつても、得られ
る減衰量は、それぞれほぼ目標通りとなるが、減
衰量が−25dBとなるように設計した場合、周波
数が高くなるにつれて、目標減衰量（−25dB）
よりも減衰量が小さくなつていく。即ち、目標減
衰量を大きくすると、抵抗器１０ｂの値が大きく
なるので、抵抗器１０ｂの値よりも浮遊容量１２
のリアクタンスの影響が大きくなり、実際に得ら
れる減衰量は目標減衰量よりも小さくなる。<Problems to be Solved by the Invention> Such a high frequency attenuator has stray capacitance between the contacts 8a and 8b of the changeover switch 2 and between the contacts 6a and 6b. In FIG. 6, contacts 8a and 8b
The stray capacitance between them is indicated by 12. Contacts 6a, 6b
The stray capacitance between the contacts 6a and 6b can be ignored because they are directly connected, but the stray capacitance between the contacts 8a and 6b can be ignored.
Since the stray capacitance between 8b and 8b is connected in parallel to the resistor 10b of the resistance attenuation circuit 10, it affects the amount of attenuation. When the frequency band of the signal supplied to the contactor 4a is low, the reactance of stray capacitance is small, so the effect can be ignored. However, when the frequency band exceeds the UHF band, the reactance becomes large, so the effect is negligible. This is particularly noticeable when the amount of attenuation is increased. FIG. 7 shows the attenuation vs. frequency characteristic when the contacts 4a and 4b of the high-frequency attenuator shown in FIG. 6 are connected to the contacts 8a and 8b, respectively, and the target attenuation is -
Resistance attenuation circuit 10 so that it is 10dB to -20dB
If the design is designed so that the attenuation is -25 dB, the obtained attenuation will be approximately the same as the frequency increases. However, if the design is designed so that the attenuation is -25 dB, the target attenuation (- 25dB)
The amount of attenuation becomes smaller. That is, when the target attenuation amount is increased, the value of the resistor 10b becomes larger, so that the stray capacitance 12 becomes larger than the value of the resistor 10b.
The influence of reactance becomes large, and the amount of attenuation actually obtained becomes smaller than the target amount of attenuation.
本考案は、上記の問題点に鑑みてなされたもの
であり、比較的高い周波数帯で使用しても、接点
間の浮遊容量の影響が減衰量に生じないようにし
た高周波用減衰器を提供することを目的とする。 The present invention has been developed in view of the above problems, and provides a high frequency attenuator in which the amount of attenuation is not affected by stray capacitance between contacts even when used in a relatively high frequency band. The purpose is to
〈課題を解決するための手段〉
上記の目的を達成するために、本考案は、少な
くとも上述したような構成の切換スイツチを備え
た高周波用減衰器において、π型またはＴ型の減
衰回路が接続され、かつ浮遊容量が生じている接
点間に、使用周波数帯において上記浮遊容量を打
ち消すインダクタンスを有するインダクタを設け
てある。この場合、インダクタがπ型減衰回路の
構成要素の一部をなしていてもよい。さらに、切
換スイツチを改良して、上述した減衰回路よりも
減衰量が小さい他の減衰回路にも切換られるよう
に構成してもよい。<Means for Solving the Problems> In order to achieve the above object, the present invention provides a high-frequency attenuator equipped with a changeover switch having at least the above-described configuration, in which a π-type or T-type attenuation circuit is connected. An inductor having an inductance that cancels out the stray capacitance in the used frequency band is provided between the contacts where the stray capacitance is generated. In this case, the inductor may form part of the component of the π-type attenuation circuit. Furthermore, the changeover switch may be modified so that it can be switched to another attenuation circuit having a smaller attenuation amount than the above-mentioned attenuation circuit.
〈作用〉
本考案による高周波用減衰器では、インダクタ
のインダクタンスが、使用周波数帯において、浮
遊容量をほぼ打ち消す値に設定されている。従つ
て、接触子をそれぞれ減衰回路側に切り換えたと
き、浮遊容量の影響が現われず、ほぼ設計通りの
減衰量を得られる。<Operation> In the high frequency attenuator according to the present invention, the inductance of the inductor is set to a value that substantially cancels stray capacitance in the frequency band used. Therefore, when each contact is switched to the attenuation circuit side, the influence of stray capacitance does not appear, and attenuation amount almost as designed can be obtained.
〈実施例〉
第１図及び第２図に第１の実施例を示す。第１
図において、２は切換スイツチ、４ａ，４ｂは接
触子、６ａ，６ｂ，８ａ，８ｂは接点で、これら
は第６図に示した従来のものと同様に構成されて
いるので、詳細な説明は省略する。接点８ａ，８
ｂ間には、従来のものと同様にπ型抵抗減衰回路
１０が設けられており、この抵抗減衰回路１０を
構成している各抵抗器１０ａ，１０ｂ，１０ｃの
値は、浮遊容量の影響がない状態で減衰量が−
25dBとなるように選択されている。<Example> A first example is shown in FIGS. 1 and 2. 1st
In the figure, 2 is a changeover switch, 4a and 4b are contacts, and 6a, 6b, 8a, and 8b are contacts, and since these are constructed in the same way as the conventional one shown in FIG. 6, a detailed explanation will be given. Omitted. Contacts 8a, 8
A π-type resistance attenuation circuit 10 is provided between B and B, as in the conventional one, and the values of the resistors 10a, 10b, and 10c constituting this resistance attenuation circuit 10 are determined by the influence of stray capacitance. The attenuation amount is -
It is selected to be 25dB.
浮遊容量１２が存在する接点８ａ，８ｂ間に
は、インダクタ１４が設けられている。このイン
ダクタ１４としては、例えば420MHz乃至820MHz
の周波数帯でこの高周波用減衰器を使用する場合
には、線径0.6mm、内径３mm、巻き数６回のもの
を、ピツチを調整して、インダクタンスが0.08乃
至0.13μHのうち適当な値となるようにして使用
することができる。 An inductor 14 is provided between the contacts 8a and 8b where the stray capacitance 12 exists. As this inductor 14, for example, 420MHz to 820MHz
When using this high frequency attenuator in a frequency band of It can be used as follows.
このように構成した高周波用減衰器において、
接触子４ａを接点８ａに、接触子４ｂを接点８ｂ
に切り換えた状態の減衰量と周波数との関係を第
２図に示す。第２図から明らかなように470MHz
では減衰量は25.30dBとなり、770MHzでは
25.20dBとなり、ほとんど変化がなく、しかも、
この間における他の周波数においても、減衰量は
ほぼ一定である。これは、インダクタ１４を浮遊
容量１２に並列に設けて、両者の合成リアクタン
スを小さくして、抵抗減衰回路１０の減衰量に浮
遊容量１２の影響がほとんどでないようにしてあ
るからである。 In the high frequency attenuator configured in this way,
The contact 4a is used as a contact 8a, and the contact 4b is used as a contact 8b.
FIG. 2 shows the relationship between the attenuation amount and the frequency when the switch is switched to . As is clear from Figure 2, 470MHz
Then the attenuation is 25.30dB, and at 770MHz
25.20dB, almost no change, and,
At other frequencies during this period, the amount of attenuation is also approximately constant. This is because the inductor 14 is provided in parallel with the stray capacitance 12 to reduce the combined reactance of both, so that the stray capacitance 12 has almost no influence on the amount of attenuation of the resistive attenuation circuit 10.
なお、使用周波数帯を非常に狭く限定してよい
場合には、その特定の周波数帯において、浮遊容
量１２とインダクタ１４のインダクタンスとが並
列共振するように、インダクタ１４のインダクタ
ンスを設定すれば、第３図に示すようにその特定
周波数帯において減衰量をさらに大きくすること
ができる。なお、第３図では670MHzを共振周波
数に選択しており、この周波数において減衰量は
38.70dBとなる。 Note that if the frequency band to be used can be very narrowly limited, the inductance of the inductor 14 can be set so that the stray capacitance 12 and the inductance of the inductor 14 resonate in parallel in that specific frequency band. As shown in FIG. 3, the amount of attenuation can be further increased in that specific frequency band. In addition, in Figure 3, 670MHz is selected as the resonant frequency, and at this frequency, the amount of attenuation is
It becomes 38.70dB.
第２の実施例を第４図及び第５図に示す。この
実施例では、２つの減衰回路１６，１８が設けら
れ、切換スイツチ２ａは、接触子４ａ，４ｂ間に
減衰回路１６が接続された状態と、接触子４ａ，
４ｂ間が直結された状態と、接触子４ａ，４ｂ間
に減衰回路１８が接続された状態とに、切換られ
るように、接点２０ａ，２０ｂ間に減衰回路１６
が接続され、接点２２ａ，２２ｂ間を直結し、接
点２４ａ，２４ｂ間に減衰回路１８を接続してあ
る。即ち、減衰量を３段階に変更できるように構
成されている。無論、接触子４ａが接点２０ａに
接続されている状態では、接触子４ｂが接点２０
ｂに接続され、接触子４ａが接点２２ａに接続さ
れた状態では、接触子４ｂが接点２２ｂに接続さ
れ、接触子４ａが接点２４ａに接続された状態で
は、接触子４ｂが接点２４ｂに接続される。 A second embodiment is shown in FIGS. 4 and 5. In this embodiment, two attenuation circuits 16 and 18 are provided, and the changeover switch 2a has two states: one where the attenuation circuit 16 is connected between the contacts 4a and 4b, and the other where the damping circuit 16 is connected between the contacts 4a and 4b.
A damping circuit 16 is connected between the contacts 20a and 20b so that the damping circuit 18 can be switched between a state in which the contacts 4b are directly connected and a state in which the damping circuit 18 is connected between the contacts 4a and 4b.
are connected, the contacts 22a and 22b are directly connected, and the attenuation circuit 18 is connected between the contacts 24a and 24b. That is, it is configured such that the amount of attenuation can be changed in three stages. Of course, when the contact 4a is connected to the contact 20a, the contact 4b is connected to the contact 20.
b, and when the contact 4a is connected to the contact 22a, the contact 4b is connected to the contact 22b, and when the contact 4a is connected to the contact 24a, the contact 4b is connected to the contact 24b. Ru.
接点２０ａ，２０ｂ間、接点２２ａ，２２ｂ間
及び接点２４ａ，２４ｂ間には、それぞれ浮遊容
量が存在する。しかし、接点２２ａ，２２ｂ間は
直結されているので、その影響はなく、接点２４
ａ，２４ｂ間には、浮遊容量が存在しても減衰量
にほとんど影響が生じない減衰量、例えば−
20dB乃至−10dBの減衰量となるように、設計さ
れた減衰回路１８が接続されているので、浮遊容
量の影響は無視できる。接点２０ａ，２０ｂ間に
接続される減衰回路１６は、減衰量が−25dBと
浮遊容量の影響を無視することができないもので
ある。接点２０ａ，２０ｂ間の浮遊容量を符号１
２ａで示す。第１の実施例では、浮遊容量を打ち
消すため、減衰回路を抵抗減衰回路として、浮遊
容量と並列にインダクタを接続したが、この第２
の実施例では、π型減衰回路の構成要素の一部、
即ち、浮遊容量１２ａが存在している接点２０
ａ，２０ｂ間に接続されるπ型減衰回路の構成要
素に、インダクタ１６ａを用いて、減衰回路１６
を構成すると共に、浮遊容量１２ａを打ち消して
いる。なお、このインダクタ１６ａとしては第１
の実施例で用いたインダクタ１４とほぼ同一のも
のを使用することができる。 Stray capacitance exists between the contacts 20a and 20b, between the contacts 22a and 22b, and between the contacts 24a and 24b. However, since the contacts 22a and 22b are directly connected, there is no effect, and the contacts 22a and 22b are directly connected.
Even if there is stray capacitance between a and 24b, there is an attenuation that has almost no effect on the attenuation, for example -
Since the attenuation circuit 18 designed to provide attenuation of 20 dB to -10 dB is connected, the influence of stray capacitance can be ignored. The attenuation circuit 16 connected between the contacts 20a and 20b has an attenuation amount of -25 dB, and the influence of stray capacitance cannot be ignored. The stray capacitance between contacts 20a and 20b is denoted by 1
Shown as 2a. In the first embodiment, the attenuation circuit is a resistive attenuation circuit and an inductor is connected in parallel with the stray capacitance in order to cancel out the stray capacitance.
In the embodiment, some of the components of the π-type attenuation circuit,
That is, the contact 20 where the stray capacitance 12a exists
By using the inductor 16a as a component of the π-type attenuation circuit connected between a and 20b, the attenuation circuit 16
, and cancels the stray capacitance 12a. Note that this inductor 16a is the first inductor 16a.
Almost the same inductor 14 used in the embodiment can be used.
第５図は、第２の実施例において、接触子４ａ
を接点２０ａに接続し、接触子４ｂを接点２０ｂ
に接続した状態、即ち、接触子４ａ，４ｂ間に減
衰回路１６が接続された状態における減衰量と周
波数の関係を示したものである。この図から周波
数が470MHz及び770MHzにおいて減衰量がそれぞ
れ25.00dBとなり、これら周波数の間でも減衰量
がほぼ25.00dBとなることが明らかである。これ
は、インダクタンス１６ａが浮遊容量１２ａと並
列に接続され、両者の合成インダクタンスが、減
衰量に影響が生じない程度の大きさとされている
からである。 FIG. 5 shows a contactor 4a in the second embodiment.
is connected to the contact 20a, and the contact 4b is connected to the contact 20b.
This figure shows the relationship between the amount of attenuation and the frequency in a state where the contacts 4a and 4b are connected to each other, that is, when the attenuation circuit 16 is connected between the contacts 4a and 4b. It is clear from this figure that the attenuation amount is 25.00 dB at frequencies of 470 MHz and 770 MHz, and that the attenuation amount is approximately 25.00 dB between these frequencies as well. This is because the inductance 16a is connected in parallel with the stray capacitance 12a, and the combined inductance of both is set to a size that does not affect the amount of attenuation.
上記の各実施例では、減衰回路としてπ型の抵
抗減衰回路を用いたが、Ｔ型の減衰回路を使用す
ることもできる。また、第１の実施例では、減衰
量0dBの状態と減衰量−25dBの状態に切り換え
たが、切換スイツチを第２の実施例に示したもの
と同様なものとし、新たに−10dB乃至−20dBの
減衰量の減衰回路を設け、減衰量0dBの状態と、
減衰量−10dB乃至−20dBの状態と、減衰量が−
25dBの状態に切換られるようにしてもよい。 In each of the above embodiments, a π-type resistance attenuation circuit is used as the attenuation circuit, but a T-type attenuation circuit may also be used. In addition, in the first embodiment, the attenuation amount was switched to 0 dB state and the attenuation amount -25 dB state, but the changeover switch is the same as that shown in the second embodiment, and the state is changed from -10 dB to -25 dB. An attenuation circuit with an attenuation of 20 dB is provided, and the attenuation is 0 dB.
Attenuation is -10dB to -20dB and attenuation is -10dB to -20dB.
It may be possible to switch to a 25 dB state.
〈考案の効果〉
以上のように、請求項(1)記載の考案の高周波用
減衰器によれば、これに用いている切換スイツチ
の接点間の浮遊容量をインダクタによつて打ち消
すことができるので、使用周波数が高くなつて
も、予め定めた減衰量にほぼ近い減衰量を維持す
ることができる。<Effects of the invention> As described above, according to the high-frequency attenuator of the invention as claimed in claim (1), the stray capacitance between the contacts of the changeover switch used therein can be canceled by the inductor. Even if the operating frequency becomes higher, it is possible to maintain an attenuation amount that is substantially close to a predetermined attenuation amount.
また、請求項(2)記載の高周波用減衰器によれ
ば、請求項(1)記載のものと同様な効果が得られる
上に、浮遊容量を打ち消すためのインダクタが、
π型減衰回路の構成要素の一部をなしているの
で、回路構成を簡略化することができる。 Further, according to the high frequency attenuator described in claim (2), the same effect as that described in claim (1) can be obtained, and the inductor for canceling stray capacitance is
Since it forms part of the component of the π-type attenuation circuit, the circuit configuration can be simplified.
さらに、請求項(3)記載の高周波用減衰器によれ
ば、請求項(1)または(2)記載のものと同様な効果が
得られる上に、減衰量を３段階に切換られる。 Furthermore, according to the high-frequency attenuator described in claim (3), the same effects as those described in claim (1) or (2) can be obtained, and the amount of attenuation can be switched in three stages.
第１図は本考案による高周波用減衰器の第１の
実施例の回路図、第２図は同実施例の減衰量対周
波数特性図、第３図は同実施例の変形例の減衰量
対周波数特性図、第４図は同第２の実施例の回路
図、第５図は同第２の実施例の減衰量対周波数特
性図、第６図は従来の高周波用減衰器の回路図、
第７図は従来の高周波用減衰器の減衰量対周波数
特性図である。
２，２ａ……切換スイツチ、４ａ……第１の接
触子、４ｂ……第２の接触子、６ａ，２２ａ……
第１の接点、６ｂ，２２ｂ……第３の接点、８
ａ，２０ａ……第２の接点、８ｂ，２０ｂ……第
４の接点、１０，１６……減衰回路、１２，１２
ａ……浮遊容量、１４，１６ａ……インダクタ、
１８……別の減衰回路、２４ａ……第５の接点、
２４ｂ……第６の接点。
Fig. 1 is a circuit diagram of a first embodiment of a high frequency attenuator according to the present invention, Fig. 2 is a diagram of attenuation versus frequency characteristics of the same embodiment, and Fig. 3 is a diagram of attenuation versus frequency of a modified example of the same embodiment. A frequency characteristic diagram, FIG. 4 is a circuit diagram of the second embodiment, FIG. 5 is an attenuation vs. frequency characteristic diagram of the second embodiment, and FIG. 6 is a circuit diagram of a conventional high frequency attenuator.
FIG. 7 is an attenuation vs. frequency characteristic diagram of a conventional high frequency attenuator. 2, 2a...Switchover switch, 4a...First contact, 4b...Second contact, 6a, 22a...
First contact, 6b, 22b...Third contact, 8
a, 20a... Second contact, 8b, 20b... Fourth contact, 10, 16... Attenuation circuit, 12, 12
a... Stray capacitance, 14, 16a... Inductor,
18...Another attenuation circuit, 24a...Fifth contact,
24b...Sixth contact point.
Claims (1)
点とを有し、第１の接触子を第１の接点に切り
換えたとき、第２の接触子が第３の接点に切り
換えられ、第１の接触子を第２の接点に切り換
えたとき、第２の接触子が第４の接点に切り換
えられるように少なくとも構成され、第１及び
第３の接点が直結されると共に、第２及び第４
の接点間に浮遊容量を有する連動切換スイツチ
と、 第２の接点と基準電位点との間を入力側とし
第４の接点と基準電位点との間を出力側とした
π型またはＴ型の第１の減衰回路と、 上記浮遊容量をほぼ打ち消す値に選択され、
第２及び第４の接点間に設けられたインダクタ
と、 を具備する高周波用減衰器。 (2) 上記第１の減衰回路がπ型であつて、上記イ
ンダクタが上記π型減衰回路の構成要素の一部
を成すことを特徴とする請求項１記載の高周波
用減衰器。 (3) 上記切換スイツチが、第５及び第６の接点を
有し、第１の接触子を第５の接点に切り換えた
とき、第２の接触子が第６の接点に切り換えら
れるように構成され、第５及び第６の接点間
に、上記第１の減衰回路よりも減衰量が小さい
別の第２の減衰回路が設けられている請求項１
または２記載の高周波用減衰器。[Claims for Utility Model Registration] (1) It has first and second contacts and first to fourth contacts, and when the first contact is switched to the first contact, the second contact is configured such that when the first contact is switched to the third contact, the second contact is switched to the fourth contact, and the second contact is switched to the fourth contact; 3 contacts are directly connected, and the 2nd and 4th contacts are directly connected.
A π-type or T-type interlocking changeover switch with stray capacitance between the contacts, and a π-type or T-type switch with the input side between the second contact and the reference potential point and the output side between the fourth contact and the reference potential point. a first attenuation circuit, selected to have a value that almost cancels out the stray capacitance,
A high frequency attenuator comprising: an inductor provided between second and fourth contacts; (2) The high frequency attenuator according to claim 1, wherein the first attenuation circuit is a π type, and the inductor forms a part of a component of the π type attenuation circuit. (3) The changeover switch has a fifth and a sixth contact, and is configured such that when the first contact is switched to the fifth contact, the second contact is switched to the sixth contact. Claim 1, wherein another second attenuation circuit having a smaller attenuation amount than the first attenuation circuit is provided between the fifth and sixth contacts.
Or the high frequency attenuator described in 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988131351U JPH0522984Y2 (en) | 1988-10-05 | 1988-10-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988131351U JPH0522984Y2 (en) | 1988-10-05 | 1988-10-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0251417U JPH0251417U (en) | 1990-04-11 |
| JPH0522984Y2 true JPH0522984Y2 (en) | 1993-06-14 |
Family
ID=31387338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988131351U Expired - Lifetime JPH0522984Y2 (en) | 1988-10-05 | 1988-10-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0522984Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261562A (en) * | 2001-02-28 | 2002-09-13 | Maspro Denkoh Corp | Signal attenuator |
| WO2015156101A1 (en) * | 2014-04-08 | 2015-10-15 | 株式会社村田製作所 | High frequency module |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6042510U (en) * | 1983-08-31 | 1985-03-26 | 三菱自動車工業株式会社 | ball end mill |
| JPS6072302A (en) * | 1983-09-28 | 1985-04-24 | Mitsubishi Electric Corp | Semiconductor switch |
| JPS617120B2 (en) * | 1981-12-04 | 1986-03-04 | Gerber Scient Inc |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617120U (en) * | 1984-06-18 | 1986-01-17 | 目黒電波測器株式会社 | Electronically switched variable attenuation device |
-
1988
- 1988-10-05 JP JP1988131351U patent/JPH0522984Y2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS617120B2 (en) * | 1981-12-04 | 1986-03-04 | Gerber Scient Inc | |
| JPS6042510U (en) * | 1983-08-31 | 1985-03-26 | 三菱自動車工業株式会社 | ball end mill |
| JPS6072302A (en) * | 1983-09-28 | 1985-04-24 | Mitsubishi Electric Corp | Semiconductor switch |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0251417U (en) | 1990-04-11 |
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