JPH05226684A - Photodiode array and manufacture thereof - Google Patents
Photodiode array and manufacture thereofInfo
- Publication number
- JPH05226684A JPH05226684A JP4027101A JP2710192A JPH05226684A JP H05226684 A JPH05226684 A JP H05226684A JP 4027101 A JP4027101 A JP 4027101A JP 2710192 A JP2710192 A JP 2710192A JP H05226684 A JPH05226684 A JP H05226684A
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- Prior art keywords
- film
- junction
- substrate
- insb
- type
- Prior art date
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- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は光波長帯３〜５μｍの赤
外線撮像素子（装置）の受光部として動作する背面入射
型フォトダイオードアレイに適用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is applied to a back-incidence type photodiode array which operates as a light receiving portion of an infrared imaging device (device) having a light wavelength band of 3 to 5 .mu.m.
【０００２】[0002]
【従来の技術】図５にプレーナ型インジウム・アンチモ
ンフォトダイオードアレイ（以下、ＩｎＳｂ Ｐ・Ｄ・
Ａと略称する）の一例を断面図で示す。なお、図は説明
を簡単にするために一画素に対応した断面を示すもので
ある。図に示されるように、不純物密度が１０14〜１０
15ｃｃ／ｃｍ3 のｎ型インジウム・アンチモン（ＩｎＳ
ｂ）基板１の一主面の一部にｐ型不純物を導入して形成
されたｐ領域２があり、ｐ−ｎ接合が形成されている。
このｐ−ｎ接合をパッシベートする部分の表面には基板
の陽極酸化膜４を介してマグネトロンスパッタＡｌ2 Ｏ
3 膜５が被着されている。また、基板の上記主面の残る
部分はマグネトロンスパッタＡｌ2 Ｏ3 膜５が被着され
ている。なお、このフォトダイオードのｐ領域２には上
記マグネトロンスパッタＡｌ2 Ｏ3 膜５の開孔部にて該
ｐ領域２にオーミックに接続されたアノードの電極金属
９が取付けられている。2. Description of the Related Art FIG. 5 shows a planer type indium antimony photodiode array (hereinafter referred to as InSb PD
An abbreviation "A") is shown in a sectional view. Note that the drawing shows a cross section corresponding to one pixel for the sake of simplicity. As shown in the figure, the impurity density is 10 14 to 10 10.
15 cc / cm 3 of n-type indium antimony (InS
b) There is a p region 2 formed by introducing a p-type impurity in a part of one main surface of the substrate 1, and a pn junction is formed.
The surface of the portion where the pn junction is passivated is magnetron sputtered Al 2 O through the anodic oxide film 4 of the substrate.
3 Membrane 5 is applied. The magnetron sputtered Al 2 O 3 film 5 is deposited on the remaining portion of the main surface of the substrate. In this p-type region 2 of the photodiode, an anode electrode metal 9 ohmic-connected to the p-type region 2 is attached at the opening of the magnetron sputtered Al 2 O 3 film 5.
【０００３】次に、上記従来のフォトダイオードアレイ
の製造方法につき、図６および図７を参照して説明す
る。Next, a method of manufacturing the above-mentioned conventional photodiode array will be described with reference to FIGS. 6 and 7.
【０００４】図は説明を簡単にする為に一画素に対応し
たダイオードの断面を示すものである。尚、画素ピッチ
は約４０μｍ×４０μｍ、ｐ−ｎ接合部寸法は約２５μ
ｍ×２５μｍである。The figure shows a cross section of a diode corresponding to one pixel in order to simplify the description. The pixel pitch is about 40 μm × 40 μm, and the pn junction size is about 25 μm.
m × 25 μm.
【０００５】まず不純物密度１０14〜１０15ｃｃ／ｃｍ
3 のｎ型インジウム・アンチモン（ＩｎＳｂ）基板１に
ｐ型不純物を選択拡散又は選択イオン注入法により導入
し、プレーナー型ｐ−ｎ接合を形成する（図６
（ａ））。次にｐ層上の表面の接合より内側の部分にフ
ォトレジスト３を形成し、フォトレジスト以外の領域に
陽極酸化膜４を成長させる（図６（ｂ））。この陽極酸
化膜は、一例としてＫＯＨ水溶液中で印加電圧１５Ｖ、
電流密度０．５ｍＡ／ｃｍ2 の条件で、３００〜７００
オングストローム（以下、オングストロームをＡと略記
する）形成される。First, the impurity density is 10 14 to 10 15 cc / cm.
A p-type impurity is introduced into the n-type indium antimony (InSb) substrate 1 of 3 by selective diffusion or selective ion implantation to form a planar pn junction (FIG. 6).
(A)). Next, a photoresist 3 is formed on a portion inside the surface of the p layer, which is inside the junction, and an anodic oxide film 4 is grown in a region other than the photoresist (FIG. 6B). This anodic oxide film is applied with an applied voltage of 15 V in a KOH aqueous solution as an example.
300 to 700 at a current density of 0.5 mA / cm 2.
Angstrom (hereinafter, Angstrom is abbreviated as A) is formed.
【０００６】次に陽極酸化時のマスクとして用いたフォ
トレジストを除去し、図６（ｃ）に示される構造を得
る。Next, the photoresist used as the mask during the anodization is removed to obtain the structure shown in FIG. 6 (c).
【０００７】次に基板表面の全面に亘ってＡｌ2 Ｏ3 膜
５をマグネトロンスパッタ法により膜厚１０００〜４０
００Ａ被着する（図６（ｄ））。Next, an Al 2 O 3 film 5 is formed on the entire surface of the substrate by a magnetron sputtering method to a film thickness of 1000 to 40.
00A is deposited (FIG. 6 (d)).
【０００８】次にフォトレジスト６を用いた選択エッチ
により電極金属と接続せしめるコンタクト孔７を形成す
る（図７（ａ））。Next, a contact hole 7 for connecting to the electrode metal is formed by selective etching using the photoresist 6 (FIG. 7A).
【０００９】次にフォトレジスト６を除去（図７
（ｂ））し、厚いフォトレジスト８を形成し、全面に電
極となるべき金属膜９ａ，９ｂを真空蒸着法により形成
する（図７（ｃ））。Next, the photoresist 6 is removed (see FIG. 7).
(B)) Then, a thick photoresist 8 is formed, and metal films 9a and 9b to be electrodes are formed on the entire surface by a vacuum evaporation method (FIG. 7C).
【００１０】次にフォトレジスト８を除去する事により
不所望な金属膜９ｂをリフトオフさせ、Ｐ・Ｄ・Ａとし
て完成する。Next, the photoresist 8 is removed to lift off the undesired metal film 9b to complete the process as P · D · A.
【００１１】以下に現在公知である図５の構造、プロセ
スについての説明を加える。Below, a description will be given of the structure and process shown in FIG.
【００１２】図５の構造で、ｐ−ｎ接合部表面のパッシ
ベーション膜は陽極酸化膜である。しかし、陽極酸化膜
は７００Ａ以下の薄い膜ではパッシベーション膜として
の効果があるものの、膜厚を厚くすると、ｎ型基板表面
の電子密度を上げる傾向が顕著で、ｐ−ｎ接合の耐圧低
下をもたらす欠点がある。一方、薄い陽極酸化膜単層で
は機械的に弱いので、陽極酸化膜の性能を損わない方法
により形成した他の膜で保護する必要がある。結局、薄
い陽極酸化膜と他の膜との多層膜構造が必須となるが、
現在のところ、薄い陽極酸化膜を保護する膜としてマグ
ネトロンスパッタ法によるＡｌ2 Ｏ3 膜が一番適してお
り、多用されている。ところで、陽極酸化膜とＡｌ2 Ｏ
3 膜の二層膜に電極接続用のコンタクト孔を施ける事は
困難である。理由は、陽極酸化膜が酸に弱く、上層のＡ
ｌ2 Ｏ3 膜のエッチ開孔時に下層の陽極酸化膜がｐ−ｎ
接合の外側まで浸蝕されてしまう事による。従って、陽
極酸化膜は図６（ｂ）のように選択的に形成され、Ａｌ
2 Ｏ3 膜開孔部７近傍には存在させない図７（ａ）に示
される構造、プロセスが採用されている。ついで厚いフ
ォトレジスト８のパターンを形成し、電極金属９ａ，９
ｂを被着し（図７（ｃ））、リフトオフによって上記金
属電極のうちｐ層にオーミック接続した電極金属９ａの
み残すことにより、図５に示されるＰ・Ｄ・Ａが得られ
る。この構造、プロセスを用いる事により、ｐ−ｎ接合
部表面のパッシベーション膜構造を薄い陽極酸化膜Ａｌ
2 Ｏ3 膜とする図５に示されるＰ・Ｄ・Ａが得られる。In the structure of FIG. 5, the passivation film on the surface of the pn junction is an anodic oxide film. However, although a thin film of 700 A or less is effective as a passivation film for the anodic oxide film, a thicker film tends to increase the electron density on the surface of the n-type substrate, resulting in a decrease in breakdown voltage of the pn junction. There are drawbacks. On the other hand, since a thin anodic oxide film single layer is mechanically weak, it is necessary to protect it with another film formed by a method that does not impair the performance of the anodic oxide film. After all, a multilayer film structure of a thin anodic oxide film and another film is essential,
At present, the Al 2 O 3 film by the magnetron sputtering method is most suitable and widely used as a film for protecting the thin anodic oxide film. By the way, the anodic oxide film and Al 2 O
It is difficult to form a contact hole for electrode connection in the three- layer two-layer film. The reason is that the anodic oxide film is weak against acid, and the upper layer A
When the 1 2 O 3 film is etched and opened, the lower anodic oxide film is pn
It is because the outside of the joint is eroded. Therefore, the anodic oxide film is selectively formed as shown in FIG.
The structure and process shown in FIG. 7A that do not exist in the vicinity of the 2 O 3 film opening 7 are adopted. Then, a pattern of thick photoresist 8 is formed, and electrode metal 9a, 9
By depositing b (FIG. 7C) and leaving only the electrode metal 9a which is ohmic-connected to the p layer of the above metal electrodes by lift-off, P.D.A shown in FIG. 5 is obtained. By using this structure and process, the passivation film structure on the surface of the pn junction is changed to a thin anodic oxide film Al.
As a 2 O 3 film, P · D · A shown in FIG. 5 is obtained.
【００１３】しかしながら、我々の実験では上記構造で
も万全でない事が判明した。それは陽極酸化膜のないＩ
ｎＳｂ上に被着したスパッタＡｌ2 Ｏ3 膜５の密着性が
悪く、Ａｌ2 Ｏ3 膜５に開孔を施す時に、若干のオーバ
エッチングでエッチング液がＡｌ2 Ｏ3 膜とＩｎＳｂ界
面を横方向に浸透する事がある為、Ａｌ2 Ｏ3 ・ＩｎＳ
ｂ界面に隙間を生じ機械的に弱いものになるという欠点
がある。また、ひどい時にはｐ−ｎ接合近傍まで浸透
し、陽極酸化膜をもエッチングしてしまう不具合が生じ
る事である。However, in our experiments, it was found that the above structure is not perfect. It has no anodized film
The adhesion of the sputtered Al 2 O 3 film 5 deposited on nSb is poor, and when an opening is made in the Al 2 O 3 film 5, the etching solution may cause a slight overetching to cause the etching solution to cross the Al 2 O 3 film and InSb interface. Al 2 O 3 · InS because it may penetrate in the direction
b There is a drawback that a gap is formed at the interface and mechanically weakened. Further, in a severe case, there is a problem that it penetrates into the vicinity of the pn junction and also etches the anodic oxide film.
【００１４】このような不具合を生じたＰ・Ｄ・Ａを撮
像素子としての受光部に供した場合、必らず傷画素とし
て表われ、撮像素子としての歩留を下げる原因となり、
経済的損失は大きなものとなる。When the P / D / A having such a defect is supplied to the light receiving portion as an image pickup element, it is inevitably displayed as a scratched pixel, which causes a reduction in the yield of the image pickup element.
Economic loss will be large.
【００１５】[0015]
【発明が解決しようとする課題】本発明は上記従来のＩ
ｎＳｂ Ｐ・Ｄ・Ａの問題点に鑑みてなされたもので、
陽極酸化膜形成以前に、陽極酸化膜形成部以外の領域に
ＩｎＳｂと密着性の良い絶縁膜を形成し、後工程で被着
されるＡｌ2 Ｏ3 膜との密着性を向上させたＩｎＳｂ
Ｐ・Ｄ・Ａ構造とその製造方法を提供することを目的と
する。DISCLOSURE OF THE INVENTION The present invention is based on the conventional I described above.
It was made in view of the problems of nSb P ・ D ・ A,
Before forming the anodic oxide film, an insulating film having good adhesion with InSb is formed in a region other than the anodic oxide film forming portion to improve the adhesion with the Al 2 O 3 film deposited in a later process.
An object is to provide a PDA structure and a manufacturing method thereof.
【００１６】[0016]
【課題を解決するための手段】第一の発明のインジウム
・アンチモンフォトダイオードアレイは、一方の電極が
一部に接続された領域の表面にはＣＶＤ ＳｉＯ2 膜を
介してマグネトロンスパッタＡｌ2 Ｏ3 膜が、ｐ−ｎ接
合をパッシベートする領域の表面には陽極酸化膜を介し
てマグネトロンスパッタＡｌ2 Ｏ3 膜が夫々被着されて
いることを特徴とする。In the indium antimony photodiode array of the first invention, magnetron sputtered Al 2 O 3 is formed on the surface of the region where one electrode is partially connected via a CVD SiO 2 film. The film is characterized in that a magnetron sputtered Al 2 O 3 film is deposited on the surface of the region where the pn junction is passivated via an anodic oxide film.
【００１７】つぎに本発明の第二の発明のインジウム・
アンチモンフォトダイオートアレイの製造方法は、ｎ型
ＩｎＳｂ基板の一主面に複数のｐ−ｎ接合を形成する工
程と、前記ｐ−ｎ接合部より電極接続部側のｐ型領域上
にＣＶＤ法によりＳｉＯ2 膜を被着する工程と、前記主
露出部に陽極酸化膜を形成する工程と、全面にマグネト
ロン式スパッタ法によりＡｌ2 Ｏ3 膜を形成する工程
と、前記Ａｌ2 Ｏ3 膜に電極取付用コンタクト孔を形成
する工程とを含む。Next, the indium of the second invention of the present invention
The manufacturing method of the antimony photo-die auto array is a process of forming a plurality of pn junctions on one main surface of an n-type InSb substrate, and a CVD method on a p-type region closer to an electrode connecting portion than the pn junction. A step of depositing a SiO 2 film by means of, a step of forming an anodized film on the main exposed portion, a step of forming an Al 2 O 3 film on the entire surface by magnetron sputtering, and a step of forming an Al 2 O 3 film on the Al 2 O 3 film. Forming a contact hole for electrode attachment.
【００１８】[0018]
【作用】本発明は３〜５μｍ帯の赤外線撮影装置に用い
傷画素のないＩｎＳｂ Ｐ・Ｄ・Ａを提供できる。The present invention can provide InSb P / D / A having no scratch pixels for use in an infrared imaging device in the 3-5 μm band.
【００１９】[0019]
【実施例】以下この発明の達成に到る実験・検討の結果
についてまず説明する。EXAMPLES First, the results of experiments and examinations for achieving the present invention will be described below.
【００２０】実験として、マグネトロンスパッタ法によ
るＡｌ2 Ｏ3 膜の基板との密着性の相違を調べたとこ
ろ、 Ｓｉ基板 非常に良好 ＩｎＳｂ基板 悪い ＩｎＳｂ／陽極酸化膜上 良好 石英基板 非常に良好 Ｓｉ／ＳｉＯ2 膜上 非常に良好 の結果を得た。この結果はＡｌ2 Ｏ3 膜被着時の基板温
度を常温から２００℃の間で変えても変化しない事、ま
たスパッタ膜をＳｉＯ2 としてもほぼ同様な結果であ
り、ＩｎＳｂ基板に直接スパッタ被着したものが特に密
着性が悪いという事が明らかになった。As an experiment, the difference in the adhesion of the Al 2 O 3 film to the substrate by the magnetron sputtering method was examined. As a result, the Si substrate was very good, the InSb substrate was bad, the InSb / anodic oxide film was good, and the quartz substrate was very good. Very good results were obtained on the SiO 2 film. This result does not change even if the substrate temperature during deposition of the Al 2 O 3 film is changed from room temperature to 200 ° C. Also, it is almost the same result when the sputtered film is SiO 2 , and the InSb substrate is directly sputtered. It was revealed that the one that was worn had particularly poor adhesion.
【００２１】次に上記試料のスパッタ膜をエッチ除去し
（ただし、ＩｎＳｂ／陽極酸化膜／Ａｌ2 Ｏ3 膜試料は
陽極酸化膜もエッチされるので除外）、基板表面を観察
したところ、ＩｎＳｂ基板のみ顕著な基板表面荒れが確
認された。この結果から、ＩｎＳｂ基板は、スパッタに
より膜が被着する初期段階にターゲット粒子でたたか
れ、基板−膜界面にがれき状の層が形成され、これが密
着性を低下させていると推測される。換言すると、それ
ぼど弱い基板である事を証明している事がわかる。従っ
てスパッタ法では、ＩｎＳｂ基板上に密着性の良いＡｌ
2 Ｏ3 膜、ＳｉＯ2 膜を形成出来ない事が判明した。
尚、ＩｎＳｂ／陽極酸化膜上は観察出来ないので不明で
あるが、膜の密着性からは、少くともＩｎＳｂ表面より
は強いものと判断される。Then, the sputtered film of the above sample was removed by etching (however, the InSb / anodized film / Al 2 O 3 film sample was excluded because the anodic oxide film was also etched), and the substrate surface was observed. Only remarkable substrate surface roughness was confirmed. From this result, it is presumed that the InSb substrate is hit with target particles in the initial stage of film deposition by sputtering, and a debris-like layer is formed at the substrate-film interface, which lowers the adhesion. .. In other words, it is proved that it is a weak substrate. Therefore, in the sputtering method, Al with good adhesion on the InSb substrate
It was found that the 2 O 3 film and the SiO 2 film could not be formed.
It is not clear because it cannot be observed on the InSb / anodic oxide film, but it is judged from the adhesiveness of the film that it is at least stronger than the InSb surface.
【００２２】一方、石英基板、Ｓｉ／ＳｉＯ2 膜上のス
パッタ被着膜は非常に密着性が良いので、Ａｌ2 Ｏ3 ス
パッタ膜形成以前に、ＩｎＳｂ基板表面にＳｉＯ2 膜を
スパッタ法以外の方法で形成して置けば、密着性の良い
膜構造の確立が可能になる。On the other hand, since the quartz substrate and the sputter-deposited film on the Si / SiO 2 film have very good adhesion, the SiO 2 film is formed on the surface of the InSb substrate by a method other than the sputtering method before the Al 2 O 3 sputtered film is formed. If formed and placed by the method, it becomes possible to establish a film structure with good adhesion.
【００２３】ところでＩｎＳｂ基板表面へのＳｉＯ2 膜
形成は低温ＣＶＤ（基板温度２５０℃以下）、光ＣＶＤ
法等で容易に実施出来、密着性は非常に良好である。従
って前記、発明が解決しようとする課題の項で述べた本
発明の目的は、叙上の方法で形成したＳｉＯ2 膜を用い
れば達成出来る。By the way, the SiO 2 film is formed on the surface of the InSb substrate by low temperature CVD (substrate temperature 250 ° C. or lower), photo CVD.
It can be carried out easily by the method etc. and the adhesion is very good. Therefore, the object of the present invention described in the section of the problem to be solved by the invention can be achieved by using the SiO 2 film formed by the above method.
【００２４】以下に本発明の一実施例のＩｎＳｂ Ｐ・
Ｄ・Ａについて図１を参照して説明する。なお、図は説
明を簡単にするため１画素に対応した断面を示してい
る。InSb P · of one embodiment of the present invention will be described below.
DA will be described with reference to FIG. The figure shows a cross section corresponding to one pixel for the sake of simplicity.
【００２５】図１に示されるように、不純物密度が１０
14〜１０15ｃｃ／ｃｍ3 のｎ型ＩｎＳｂ基板１の一主面
の一部にｐ型不純物を導入して形成されたｐ領域２があ
り、ｐ−ｎ接合が形成されている。このｐ−ｎ接合をパ
ッシベートする部分の表面には基板の陽極酸化膜４を介
してマグネトロンスパッタＡｌ2 Ｏ3 膜５が被着されて
いる。基板の上記主面の残る部分（ｐ−ｎ接合部上を除
く内側）には電極金属９接続部を除きＣＶＤ法により形
成されたＳｉＯ2 膜１０が被着され、これを介してマグ
ネトロンスパッタＡｌ2 Ｏ3 膜５が積層し形成されてい
る。As shown in FIG. 1, the impurity density is 10
There is a p region 2 formed by introducing a p-type impurity in a part of one main surface of the n-type InSb substrate 1 of 14 to 10 15 cc / cm 3 , and a pn junction is formed. A magnetron sputtered Al 2 O 3 film 5 is deposited on the surface of the portion where the pn junction is passivated through the anodic oxide film 4 of the substrate. An SiO 2 film 10 formed by the CVD method is deposited on the remaining portion of the main surface of the substrate (inside except on the pn junction portion) except for the electrode metal 9 connection portion, and magnetron sputtered Al is formed therethrough. The 2 O 3 film 5 is formed by stacking.
【００２６】次に本発明にかかるＩｎＳｂ Ｐ・Ｄ・Ａ
の製造方法の一実施例につき、図１ないし図４を参照し
て説明する。Next, InSb P.D.A according to the present invention
An embodiment of the manufacturing method will be described with reference to FIGS.
【００２７】まず、図６（ａ）と同様ｐ−ｎ接合を形成
したＩｎＳｂ基板を用意する（図２（ａ））。First, an InSb substrate having a pn junction formed therein is prepared as in FIG. 6A (FIG. 2A).
【００２８】次に、基板表面全面にＮ2 ベース５％モノ
シランとＯ2 を用いた低温ＣＶＤ法にて、基板温度２０
０〜３００℃の条件でＳｉＯ2 膜１０を膜厚１０００〜
２０００Ａ被着する（図２（ｂ））。Next, a substrate temperature of 20 is applied to the entire surface of the substrate by a low temperature CVD method using N 2 -based 5% monosilane and O 2.
The SiO 2 film 10 having a film thickness of 1000 to
2000A is deposited (FIG. 2B).
【００２９】次に、ｐ層上の表面の接合より内側の部分
にフォトレジスト３を形成し、フォトレジスト以外の領
域のＳｉＯ2 膜をＮＨ4 Ｆ：ＨＦ溶液にてエッチ除去
し、次いでＳｉＯ2 膜を除去した領域に陽極酸化膜４
を、従来法と同様に膜厚３００〜７００Ａ成長させる
（図３（ａ））。Next, a photoresist 3 is formed on the inside of the surface junction on the p-layer, the SiO 2 film in the region other than the photoresist is removed by etching with an NH 4 F: HF solution, and then SiO 2 is removed. Anodized film 4 in the area where the film is removed
Is grown to a film thickness of 300 to 700 A as in the conventional method (FIG. 3A).
【００３０】次にフォトレジスト３を除去し、図３
（ｂ）の構造を得る。尚、この方法の陽極酸化膜形成
は、フォトレジスト３を除去した後に行なっても良い。Next, the photoresist 3 is removed, and FIG.
The structure of (b) is obtained. The formation of the anodic oxide film by this method may be performed after removing the photoresist 3.
【００３１】次に、基板表面全面にＡｌ2 Ｏ3 膜５をマ
グネトロンスパッタ法により膜厚１０００〜４０００Ａ
被着する（図３（ｃ））。Next, an Al 2 O 3 film 5 is formed on the entire surface of the substrate by a magnetron sputtering method to have a film thickness of 1000 to 4000A.
It is attached (FIG. 3 (c)).
【００３２】次にフオトレジスト６を用いた選択エッチ
により、コンタクト孔７を形成する。この時上層のＡｌ
2 Ｏ3 膜５は８０℃の熱リン酸にてエッチし、下層のＳ
ｉＯ2 膜１０はＮＨ4 Ｆ・ＨＦ溶液にてエッチする（図
３（ｄ））。Next, a contact hole 7 is formed by selective etching using the photoresist 6. At this time, the upper layer of Al
The 2 O 3 film 5 is etched with hot phosphoric acid at 80 ° C.
The iO 2 film 10 is etched with an NH 4 F.HF solution (FIG. 3D).
【００３３】次にフォトレジスト６を除去し（図４
（ａ））、従来例で説明したと同様の電極形成工程、す
なわち、厚いフォトレジスト８を用いリフトオフ法によ
り（図４（ｂ））、Ｐ・Ｄ・Ａが形成される。Next, the photoresist 6 is removed (see FIG.
(A)), P · D · A is formed by the same electrode forming step as described in the conventional example, that is, by the lift-off method using the thick photoresist 8 (FIG. 4B).
【００３４】尚、ここでは説明を省略したが、アース電
極を取り出す為にｎ型基板表面に施ける必要の有るアー
ス用コンタクト孔形成部も、ＳｉＯ2 膜／Ａｌ2 Ｏ3 膜
として開孔出来るようフォトマスクが設計されている。Although not described here, the ground contact hole forming portion which needs to be formed on the surface of the n-type substrate to take out the ground electrode can also be opened as a SiO 2 film / Al 2 O 3 film. The photomask is designed to be.
【００３５】上記実施例を適用したＰ・Ｄ・ＡではＩｎ
Ｓｂ表面・ＳｉＯ2 膜・Ａｌ2 Ｏ3膜間の密着性は非常
に優れたもので、ＳｉＯ2 膜／Ａｌ2 Ｏ3 膜二層にコン
タクト孔を設けるエッチング工程も少しも問題ない。In P / D / A to which the above embodiment is applied, In
The adhesion between the Sb surface, the SiO 2 film and the Al 2 O 3 film is very excellent, and there is no problem in the etching process of providing a contact hole in the SiO 2 film / Al 2 O 3 film bilayer.
【００３６】しかも、ｐ−ｎ接合表面のパッシベーショ
ン膜として有効な陽極酸化膜、陽極酸化膜の保護膜とし
て有効なＡｌ2 Ｏ3 膜の特徴を少しも損う事がない。従
って、傷画素の無いＩｎＳｂ Ｐ・Ｄ・Ａを提供する事
が出来る。Moreover, the characteristics of the anodic oxide film which is effective as a passivation film on the pn junction surface and the Al 2 O 3 film which is effective as a protective film for the anodic oxide film are not impaired at all. Therefore, it is possible to provide InSb P / D / A having no scratched pixels.
【００３７】[0037]
【発明の効果】以上述べたように本発明によれば、傷画
素の無いＩｎＳｂ Ｐ・Ｄ・Ａを提供出来、３〜５μ帯
赤外線撮影装置として商品化を可能にする。As described above, according to the present invention, it is possible to provide InSb PDA without scratch pixels, and it is possible to commercialize it as a 3-5 μ band infrared imaging device.
【００３８】尚、本発明の説明はプレーナー型Ｐ・Ｄ・
Ａにて行なったが、プレーナー型に限定されるものでは
なく、メサ型Ｐ・Ｄ・Ａへの適用も可能である。The description of the present invention will be given with respect to the planar type P.D.
However, the present invention is not limited to the planar type, but can be applied to the mesa type P / D / A.
【図１】本発明の一実施例に係るＰ・Ｄ・Ａの一部を示
す断面図である。FIG. 1 is a cross-sectional view showing a part of a PDA according to an embodiment of the present invention.
【図２】（ａ），（ｂ）は本発明の一実施例に係るＰ・
Ｄ・Ａの製造方法の一部工程を示すいずれも断面図であ
る。2 (a) and 2 (b) are views of P.
It is sectional drawing which shows all the one part processes of the manufacturing method of DA.
【図３】（ａ）〜（ｄ）は図２に続きＰ・Ｄ・Ａの製造
方法の一部工程を示すいずれも断面図である。3 (a) to 3 (d) are cross-sectional views each showing a partial step of the method for manufacturing PDA which follows FIG.
【図４】（ａ），（ｂ）は図３に続きＰ・Ｄ・Ａの製造
方法の一部工程を示すいずれも断面図である。4 (a) and 4 (b) are cross-sectional views each showing a partial step of the method for manufacturing PDA which follows FIG.
【図５】従来例のＰ・Ｄ・Ａの一部を示す断面図であ
る。FIG. 5 is a cross-sectional view showing a part of P, D, A of a conventional example.
【図６】（ａ）〜（ｄ）は従来のＰ・Ｄ・Ａの製造方法
の一部工程を示すいずれも断面図である。6 (a) to 6 (d) are cross-sectional views each showing a partial process of a conventional P / D / A manufacturing method.
【図７】（ａ）〜（ｃ）は図６に続きＰ・Ｄ・Ａの製造
方法の一部工程を示すいずれも断面図である。7 (a) to 7 (c) are cross-sectional views each showing a partial step of the method for manufacturing P · D · A following FIG.
１…ｎ型ＩｎＳｂ基板 ２…ｐ層 ３…フォトレジスト ４…陽極酸化膜 ５…スパッタＡｌ2 Ｏ3 膜 ６…フォトレジスト ７…コンタクト孔 ８…厚いフォトレジスト ９ａ，９ｂ…電極金属 １０…ＣＶＤ ＳｉＯ2 膜1 ... n-type InSb substrate 2 ... p layer 3 ... photoresist 4 ... anodic oxide film 5 ... sputtering the Al 2 O 3 film 6 ... photoresist 7 ... contact hole 8 ... thick photoresist 9a, 9b ... electrode metal 10 ... CVD SiO 2 membranes
Claims (2)
記電極近傍の表面にはＣＶＤ ＳｉＯ2 膜を介してマグ
ネトロンスパッタＡｌ2 Ｏ3 膜が、ｐ−ｎ接合をパッシ
ベートする領域の表面には陽極酸化膜を介してマグネト
ロンスパッタＡｌ2 Ｏ3 膜が夫々被着されてなるインジ
ウム・アンチモンフォトダイオードアレイ。1. A surface of a region in which one electrode is partially connected to a surface in the vicinity of the electrode is a magnetron sputtered Al 2 O 3 film via a CVD SiO 2 film and a surface of a region where a pn junction is passivated. An indium antimony photodiode array in which a magnetron sputtered Al 2 O 3 film is deposited on each of them via an anodic oxide film.
ｎ接合を形成する工程と、前記ｐ−ｎ接合部より電極接
続部側のｐ型領域上にＣＶＤ法によりＳｉＯ2膜を被着
する工程と、前記主面の露出部に陽極酸化膜を形成する
工程と、全面にマグネトロン式スパッタ法によりＡｌ2
Ｏ3 膜を形成する工程と、前記Ａｌ2 Ｏ3 膜／ＳｉＯ2
膜に電極取付用コンタクト孔を形成する工程を含むイン
ジウム・アンチモンフォトダイオードアレイの製造方
法。2. An n-type InSb substrate having a plurality of p-types on one main surface thereof.
Forming an n-junction, depositing a SiO 2 film on the p-type region on the electrode connecting part side of the pn junction by a CVD method, and forming an anodic oxide film on the exposed part of the main surface. And the entire surface by Al 2 by magnetron sputtering method.
A step of forming an O 3 film and the Al 2 O 3 film / SiO 2
A method for manufacturing an indium antimony photodiode array, which comprises the step of forming a contact hole for electrode attachment in a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4027101A JPH05226684A (en) | 1992-02-14 | 1992-02-14 | Photodiode array and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4027101A JPH05226684A (en) | 1992-02-14 | 1992-02-14 | Photodiode array and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05226684A true JPH05226684A (en) | 1993-09-03 |
Family
ID=12211699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4027101A Pending JPH05226684A (en) | 1992-02-14 | 1992-02-14 | Photodiode array and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05226684A (en) |
-
1992
- 1992-02-14 JP JP4027101A patent/JPH05226684A/en active Pending
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