JPH05226295A - Dry etching apparatus for tft-lcd - Google Patents
Dry etching apparatus for tft-lcdInfo
- Publication number
- JPH05226295A JPH05226295A JP4622092A JP4622092A JPH05226295A JP H05226295 A JPH05226295 A JP H05226295A JP 4622092 A JP4622092 A JP 4622092A JP 4622092 A JP4622092 A JP 4622092A JP H05226295 A JPH05226295 A JP H05226295A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- lower electrode
- electrode plate
- transparent insulating
- insulating substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Crystal (AREA)
- Drying Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は透明絶縁基板上に形成し
た各種薄膜上にフォトレジストを塗布してパターニング
した後、該パターニングに沿って前記薄膜をエッチング
するためのＴＦＴ−ＬＣＤのドライエッチング装置に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus for a TFT-LCD for coating a thin film formed on a transparent insulating substrate with a photoresist, patterning the thin film, and etching the thin film according to the patterning. It is about.
【０００２】[0002]
【従来の技術】液晶パネルには大別してアクティブマト
リック方式(各表示画素に薄膜トランジスタを組み込ん
で各画素に能動性をもたせたもの即ち薄膜トランジス
タ:ＴＦＴまたはＭＩＭダイオード)と、電極ラインのみ
で構成する単純マトリックス方式とに分かれるが、クロ
ストークや画質を考慮すると前者ＴＦＴによる液晶パネ
ル(以下ＴＦＴ−ＬＣＤと謂う)が最も有望であり、開発
の目もこの方向に注がれている。しかし、ＴＦＴ−ＬＣ
Ｄの高画質化の為には、トランジスタを小さくすること
が必要であり、しかも半導体薄膜や、絶縁体薄膜の膜質
向上或は、金属薄膜の抵抗値を少くしたり配線の幅を狭
くすることが要求されている。そこで上記ＴＦＴ−ＬＣ
Ｄ即ち液晶パネルにおいては、透明絶縁基板(ガラス板
その他)上に画素を形成する場合、該透明絶縁基板上に
半導体薄膜や、絶縁体薄膜或は金属薄膜等の各種薄膜を
形成した後フォトレジストを塗布し、更に該フォトレジ
ストを露光及び現像してパターニングしてから該パター
ニングに沿って前記各種薄膜をエッチング工程でエッチ
ングすることにより透明絶縁基板上に薄膜トランジスタ
(ＴＦＴ)を構成している。そこで上記エッチング工程に
はドライエッチング(乾式)による手法と、ウエットエッ
チング(湿式)による手法とがあるが、ここではこのうち
本発明との関係からドライエッチングによる工程につい
ての装置例を挙げると、図５に示すようにドライエッチ
ング装置８の下位電極１にシリンダー(図示せず)その他
に接続した基板昇降用ピン４,４,…を上下動自由に設
け、該下位電極１と上位電極２との間に供給された前記
透明絶縁基板４を下面から支承して上、下位両電極へ交
流電源７から高周波電界を印加してフォトレジストに掩
われていない部分をエッチングするものがある。2. Description of the Related Art Liquid crystal panels are roughly classified into active matrix systems (thin film transistors are incorporated in each display pixel to make each pixel active, that is, thin film transistors: TFTs or MIM diodes) and a simple matrix system composed only of electrode lines. However, considering the crosstalk and the image quality, the liquid crystal panel with the former TFT (hereinafter referred to as TFT-LCD) is the most promising, and the development eye is also focusing on this direction. However, TFT-LC
In order to improve the image quality of D, it is necessary to reduce the size of the transistor, and further improve the film quality of the semiconductor thin film or the insulator thin film, or reduce the resistance value of the metal thin film or narrow the width of the wiring. Is required. Therefore, the above TFT-LC
D, that is, in a liquid crystal panel, when pixels are formed on a transparent insulating substrate (glass plate or the like), a photoresist is formed after forming various thin films such as a semiconductor thin film, an insulator thin film or a metal thin film on the transparent insulating substrate. Thin film transistor on a transparent insulating substrate by coating the photoresist, exposing and developing the photoresist, patterning, and etching the various thin films in an etching process according to the patterning.
(TFT). Therefore, in the etching process, there are a method by dry etching (dry type) and a method by wet etching (wet) .Here, of these, an example of a device for the step by dry etching is shown in relation to the present invention. As shown in FIG. 5, the lower electrode 1 of the dry etching apparatus 8 is provided with substrate elevating pins 4, 4, ... Connected to a cylinder (not shown) or the like so as to move up and down to connect the lower electrode 1 and the upper electrode 2. There is a method in which the transparent insulating substrate 4 supplied between them is supported from the lower surface, and a high frequency electric field is applied to both lower electrodes from an AC power source 7 to etch the portion not covered by the photoresist.
【０００３】[0003]
【発明が解決しようとする課題】しかし、ウエットエッ
チングによる手法が主流となっている中でドライエッチ
ングによる手法を取り入れるには種々な問題が多く、特
に問題となるのは、エッチング処理によって生じる処理
生成物が透明絶縁基板の裏面即ちエッチング面の反対面
に付着し、後続工程の熱履厂によって更に強固な膜に変
化して後のウエットエッチング工程を通った時に前記透
明絶縁基板の裏面にエッチングレイトの局所性が現れ、
それが凹凸となってガラス面が白濁すると云う課題があ
る。そこでこの問題を解決する為にダミーガラスを透明
絶縁基板の裏面に付けて２枚のガラスで装置内を搬送し
たり、或は該透明絶縁基板の裏面にもフォトレジストを
塗布して該基板が直接ドライエッチング装置内に露出し
ないようにして処理生成物が付着するのを防ぐようにし
ていたが、これも尚、白濁を完全に防止できない許りか
基板裏面にカバーガラスを沿わせたり、該基板表面を傷
つけないようにするためカバーガラスの裏面にフォトレ
ジストを塗布したりするなどの煩雑な作業が多く、工程
が増加する問題があった。However, there are many problems in incorporating the method of dry etching in the mainstream of the method of wet etching, and particularly the problem is that the process generated by the etching process is generated. When an object adheres to the back surface of the transparent insulating substrate, that is, the surface opposite to the etching surface, the film is transformed into a stronger film by the subsequent heat treatment and passes through the subsequent wet etching process, and the etching rate is applied to the back surface of the transparent insulating substrate. The locality of
There is a problem that it becomes uneven and the glass surface becomes cloudy. Therefore, in order to solve this problem, a dummy glass is attached to the back surface of the transparent insulating substrate and the inside of the apparatus is transported by two sheets of glass, or a photoresist is applied to the back surface of the transparent insulating substrate to remove the substrate. Although it was prevented from directly adhering to the inside of the dry etching apparatus to prevent the processing products from adhering to the substrate, a cover glass may be provided along the back surface of the substrate or the substrate may not be completely prevented from clouding. In order to prevent the surface from being damaged, there are many complicated operations such as applying a photoresist to the back surface of the cover glass, which causes a problem of increasing the number of steps.
【０００４】[0004]
【課題を解決するための手段】半導体薄膜や絶縁体薄膜
或は金属薄膜等各種薄膜を担持する透明絶縁基板をドラ
イエッチング装置内の下位電極板上部で載支し、且つ該
下位電極板上面へ下降静置するように上下動自由に設け
た基板昇降用ピンと、該下位電極板上に静置した前記透
明絶縁基板を該下位電極板に密着保持させる基板抑えと
からなる。[MEANS FOR SOLVING THE PROBLEMS] A transparent insulating substrate carrying various thin films such as a semiconductor thin film, an insulator thin film or a metal thin film is mounted on a lower electrode plate upper part in a dry etching apparatus, and is attached to the upper surface of the lower electrode plate. It is composed of a substrate elevating pin which is vertically movable so as to be lowered and left stationary, and a substrate holder which holds the transparent insulating substrate which is left stationary on the lower electrode plate in close contact with the lower electrode plate.
【０００５】[0005]
【作用】ドライエッチング装置内に移送された透明絶縁
基板を基板昇降用ピンの上端にて載置して、下位電極板
上面に静置すると共に、前記基板を基板抑えにより下位
電極板上に密着して抑止保持し、上、下位電極板に高周
波電界を印加することによりエッチング処理の際生じた
生成物の基板下面への回わり込みを防止すると共に電極
板との密着により熱効果を高め乍らドライエッチングす
るものである。[Function] The transparent insulating substrate transferred into the dry etching apparatus is placed on the upper end of the substrate elevating pin and is allowed to stand still on the upper surface of the lower electrode plate, and the substrate is held in close contact with the lower electrode plate by pressing the substrate. Then, by holding a high frequency electric field on the upper and lower electrode plates, the products generated during the etching process are prevented from wrapping around to the lower surface of the substrate and the thermal effect is enhanced by the close contact with the electrode plate. Dry etching.
【０００６】[0006]
【実施例】以下本発明について図面に示す実施例により
詳細に説明すると、先ず図１、図２は第１実施例を示
し、ドライエッチング装置８内の下位電極板１に透明絶
縁基板(ガラス板その他)３を受載する複数本の基板昇降
用ピン４,４,…を上下動自由に貫通挿設すると共に該下
位電極板１に上端に基板抑え６を定設した昇降杆５,５,
…を回動且つ上下動自由に挿設し、該昇降杆５,５,…及
び前記基板昇降用ピン４,４,…の下端に図示しないがシ
リンダー装置を連設しており、複数個の昇降杆５,５,…
を同時に上下するように構成している。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to the embodiments shown in the drawings. First, FIGS. 1 and 2 show a first embodiment, in which a transparent insulating substrate (glass plate) is attached to a lower electrode plate 1 in a dry etching apparatus 8. Others) A plurality of board lifting pins 4, 4 for receiving 3 are vertically pierced through the lower electrode plate 1, and a board holder 6 is fixedly mounted on the upper end of the lower electrode plate 5, 5,
... are inserted so as to rotate and move up and down, and a cylinder device (not shown) is connected continuously to the lower ends of the elevating rods 5, 5, ... And the substrate elevating pins 4, 4 ,. Lifting rod 5,5, ...
Are configured to move up and down at the same time.
【０００７】次に上記装置の動作について述べると先ず
最初基板昇降用ピン４,４,…及び昇降杆５,５,…は押し
あげられて上方に突出しており、しかも該昇降杆５,５,
…は上端の基板抑え６が各昇降杆５,５,…より外側にあ
るように１８０°回動した状態にあり、ここで既に前の
工程においてフォトレジストにてパターニングした透明
基板３(半導体薄膜や絶縁体薄膜或は金属薄膜等を形成
したもの)をドライエッチング装置８内へ供給して基板
昇降用ピン４,４,…の上端にて受載し、次に該昇降用ピ
ン４,４,…を下降させて基板３を下位電極板１上に静置
し、その後直ちに昇降杆５,５,…を１８０°回動して、
上端の基板抑え６,…が互い内向きに相対するような姿
勢にしてから各昇降杆５,５,…を一斉に下降し、その動
作の終端において該基板抑え６,６,…により基板３の外
縁部を下位電極板１上に抑圧して密着保持してから両電
極板１,２間に交流電源７から高周波電界を印加するこ
とにより電極板間に静置した基板のパターニング面はエ
ッチングされＴＦＴアレイ基板として形成され、基板３
と下位電極板３とは密着した状態で保持されているから
エッチング処理によって発生した処理生成物は基板３の
下面への回わり込みが防止され、しかも、熱が基板３へ
有効に作用する。Next, the operation of the above apparatus will be described. First, the substrate elevating pins 4, 4, ... And the elevating rods 5, 5, .. are pushed up and project upward, and the elevating rods 5, 5 ,.
... is in a state of being rotated by 180 ° so that the substrate retainer 6 at the upper end is located outside each of the elevating rods 5, 5, ..., and here, the transparent substrate 3 (semiconductor thin film) already patterned with the photoresist in the previous step. Or an insulating thin film or a metal thin film) is supplied into the dry etching device 8 to be received by the upper ends of the substrate elevating pins 4, 4 ,. , Are lowered to place the substrate 3 on the lower electrode plate 1, and immediately thereafter, the elevating rods 5, 5, ... Are rotated 180 °,
After the substrate restraints 6, ... At the upper end are placed in such a position that they face each other inwardly, the elevating rods 5,5, ... Are lowered all at once, and at the end of the operation, the substrate restraints 6,6 ,. The outer edge of the substrate is suppressed on the lower electrode plate 1 and held in close contact, and then a high-frequency electric field is applied between the electrode plates 1 and 2 by an AC power source 7 to etch the patterning surface of the substrate left stationary between the electrode plates. Substrate 3 formed as a TFT array substrate
Since the lower electrode plate 3 and the lower electrode plate 3 are held in close contact with each other, the processed products generated by the etching process are prevented from wrapping around to the lower surface of the substrate 3, and the heat effectively acts on the substrate 3.
【０００８】図３、図４は第２実施例を示し、前記第１
実施例と大差はないが、特に異なる処は基板抑え６ａが
基板３の周縁を一挙に抑止できるような額縁状をなすも
のであり、従ってこの場合の昇降杆５ａ,５ａ,…は第１
実施例における時のように夫々が回動するのみである。
その結果、基板を挿入する場合、該基板抑え６ａの上部
から挿入することはできず専ら、該基板抑え６ａの下方
を横方向から挿入するだけである。他、第１実施例と異
なる処は特に存在しない。FIGS. 3 and 4 show a second embodiment of the first embodiment.
Although not so different from the embodiment, the substrate restraint 6a has a frame shape capable of restraining the peripheral edge of the substrate 3 all at once, so that the lifting rods 5a, 5a, ...
Each one only rotates as in the embodiment.
As a result, when inserting the substrate, it is not possible to insert it from the upper portion of the substrate retainer 6a, and only the lower portion of the substrate retainer 6a is inserted laterally. There is no particular difference from the first embodiment.
【０００９】[0009]
【発明の効果】本考案は上述のように構成したので各種
薄膜を担持した透明絶縁基板が下位電極板上に密着保持
されてドライエッチングの際に生じる処理生成物が該基
板の下側へ回り込むのが防止でき、これが原因で工程中
に生じる基板の白濁が除去できる。又、基板下位電極板
に密着することで該基板に及ぼす熱効果が大である。Since the present invention is configured as described above, the transparent insulating substrate carrying various thin films is adhered and held on the lower electrode plate, and the processing products generated during the dry etching wrap around to the lower side of the substrate. Can be prevented, and the white turbidity of the substrate generated during the process due to this can be removed. In addition, the thermal effect exerted on the substrate by adhering to the substrate lower electrode plate is great.
【図１】本発明第１実施例の縦断側面略図である。FIG. 1 is a schematic vertical sectional side view of the first embodiment of the present invention.
【図２】同上平面略図である。FIG. 2 is a schematic plan view of the same.
【図３】第２実施例の縦断側面略図である。FIG. 3 is a schematic vertical sectional side view of the second embodiment.
【図４】同上平面略図である。FIG. 4 is a schematic plan view of the same.
【図５】従来例の縦断側面略図である。FIG. 5 is a schematic vertical sectional side view of a conventional example.
１ 下位電極板 ３ 透明絶縁基板 ４ 基板昇降用ピン ５,５ａ 昇降杆 ６,６ａ 基板抑え 1 Lower electrode plate 3 Transparent insulating substrate 4 Substrate lifting pins 5, 5a Lifting rod 6, 6a Substrate restraint
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｈ０１Ｌ 29/784 (72)発明者 桜井 猛久 大阪府大阪市阿倍野区長池町22番22号シャ ープ株式会社内 (72)発明者 伴 厚志 大阪府大阪市阿倍野区長池町22番22号シャ ープ株式会社内 (72)発明者 中沢 清 大阪府大阪市阿倍野区長池町22番22号シャ ープ株式会社内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI technical display location // H01L 29/784 (72) Inventor Takehisa Sakurai 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Ban Atsushi 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Kiyoshi Nakazawa 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Inside the corporation
Claims (1)
絶縁体薄膜、或は金属薄膜等の各種薄膜上にフォトレジ
ストを塗布し、これをパターニングした後該各種薄膜を
エッチングする装置において、該各種薄膜を担持する透
明絶縁基板を、エッチング装置内の下位電極板上部で載
支し且つ該下位電極板上面へ下降静置するように上下動
自由に設けた基板昇降用ピンと、該下位電極板上に静置
した前記透明絶縁基板を該下位電極板に密着保持させる
基板抑えとからなり、該基板抑えの動作で透明絶縁基板
と下位電極板とを密着させることにより、エッチング処
理中の生成物が該透明絶縁基板の下面へ回り込むことを
防止するようにしたことを特徴とするＴＦＴ−ＬＣＤの
ドライエッチング装置。1. An apparatus for coating a photoresist on various thin films such as a semiconductor thin film, an insulator thin film, or a metal thin film formed on a transparent insulating substrate, patterning the photoresist, and etching the various thin films. A transparent insulating substrate carrying various thin films is mounted on the lower electrode plate in the etching apparatus and is vertically movable so that the transparent insulating substrate is supported on the lower electrode plate and placed on the upper surface of the lower electrode plate, and the lower electrode plate. A substrate holder that holds the transparent insulating substrate placed on the lower electrode plate in close contact with the lower electrode plate, and the transparent insulating substrate and the lower electrode plate are brought into close contact with each other by the operation of holding the substrate, thereby producing a product during the etching process. A dry etching apparatus for a TFT-LCD, characterized in that it is prevented from wrapping around under the transparent insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4622092A JPH05226295A (en) | 1992-01-31 | 1992-01-31 | Dry etching apparatus for tft-lcd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4622092A JPH05226295A (en) | 1992-01-31 | 1992-01-31 | Dry etching apparatus for tft-lcd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05226295A true JPH05226295A (en) | 1993-09-03 |
Family
ID=12741030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4622092A Pending JPH05226295A (en) | 1992-01-31 | 1992-01-31 | Dry etching apparatus for tft-lcd |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05226295A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820237A (en) * | 1986-02-28 | 1989-04-11 | Laurel Bank Machines Co., Ltd. | Coin conveying and stacking apparatus |
| US4832655A (en) * | 1986-02-28 | 1989-05-23 | Laurel Bank Machines Co., Ltd. | Coin stacking apparatus |
| KR101512135B1 (en) * | 2008-10-23 | 2015-04-14 | 주식회사 원익아이피에스 | Apparatus for treatment of plural substrates |
| CN106935463A (en) * | 2017-02-27 | 2017-07-07 | 成都京东方光电科技有限公司 | For the bogey and dry etching equipment of dry etching |
| CN107037615A (en) * | 2016-02-03 | 2017-08-11 | 南京瀚宇彩欣科技有限责任公司 | The etching machines of this support bar of support bar with application |
| KR20180136146A (en) * | 2017-06-14 | 2018-12-24 | 주식회사 케이씨텍 | Substrate heating apparatus and substrate treating system having the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215623A (en) * | 1988-04-25 | 1990-01-19 | Applied Materials Inc | Magnetic field enhancing plasma etching reactor |
| JPH0421779A (en) * | 1989-12-18 | 1992-01-24 | Tokyo Electron Ltd | Vacuum treating device |
-
1992
- 1992-01-31 JP JP4622092A patent/JPH05226295A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0215623A (en) * | 1988-04-25 | 1990-01-19 | Applied Materials Inc | Magnetic field enhancing plasma etching reactor |
| JPH0421779A (en) * | 1989-12-18 | 1992-01-24 | Tokyo Electron Ltd | Vacuum treating device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4820237A (en) * | 1986-02-28 | 1989-04-11 | Laurel Bank Machines Co., Ltd. | Coin conveying and stacking apparatus |
| US4832655A (en) * | 1986-02-28 | 1989-05-23 | Laurel Bank Machines Co., Ltd. | Coin stacking apparatus |
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