JPH05226210A - Pattern formation method - Google Patents
Pattern formation methodInfo
- Publication number
- JPH05226210A JPH05226210A JP4069067A JP6906792A JPH05226210A JP H05226210 A JPH05226210 A JP H05226210A JP 4069067 A JP4069067 A JP 4069067A JP 6906792 A JP6906792 A JP 6906792A JP H05226210 A JPH05226210 A JP H05226210A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- photomask
- pattern
- exposed
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は超微細なパターンの形成
方法、特に断面形状がＴ字型又は倒立Ｌ字型を有するフ
ォトレジストのパターンを形成する方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an ultrafine pattern, and more particularly to a method for forming a photoresist pattern having a T-shaped or an inverted L-shaped cross section.
【０００２】[0002]
【従来の技術】半導体素子の製造工程において、ウエハ
上にレジストを塗布しパターンを形成する方法に光露光
法がある。図１は従来の光露光法によりフォトレジスト
にサブミクロンオーダのパターンを形成する工程を示す
模式的断面図である。形成されるフォトレジストのパタ
ーンはセルフアライン型イオン注入を行うためのダミー
ゲートであり、断面形状がＴ字型を成しその底部は 0.5
μｍ以下である。図１(a) に示すように、GaAs基板１上
にネガ型のフォトレジスト２として，ＬＭＲ（冨士薬品
工業（株）製）を１μｍ塗布し、フォトレジスト２の上
方１μｍ離隔したところにパターン部４を有するフォト
マスク３を配置し、波長260nm の遠紫外光を照射する。
ＬＭＲはこの遠紫外光によりその表面から略 0.2μｍま
でを感光する。またフォトレジスト２及びフォトマスク
３が１μｍ離隔しているために遠紫外光に回折が起こ
り、フォトマスク３が有するパターン幅よりも広く，深
さ 0.2μｍの感光部５が形成される。次に、図１(b) に
示すようにフォトレジスト２をエッチングする。感光部
５より下部のフォトレジスト２がアンダーエッチングさ
れ、断面が略Ｔ字型のダミーゲート６が形成される。2. Description of the Related Art In a semiconductor device manufacturing process, there is a light exposure method as a method of applying a resist on a wafer to form a pattern. FIG. 1 is a schematic sectional view showing a step of forming a submicron-order pattern on a photoresist by a conventional light exposure method. The photoresist pattern to be formed is a dummy gate for performing self-aligned ion implantation and has a T-shaped cross section with a bottom of 0.5.
It is less than or equal to μm. As shown in FIG. 1 (a), as a negative photoresist 2, LMR (manufactured by Fuji Chemical Industry Co., Ltd.) is applied to a thickness of 1 μm on a GaAs substrate 1, and a pattern portion is formed at a distance of 1 μm above the photoresist 2. A photomask 3 having No. 4 is arranged, and far ultraviolet light having a wavelength of 260 nm is irradiated.
The LMR sensitizes the surface to about 0.2 μm from the surface with this far-ultraviolet light. Further, since the photoresist 2 and the photomask 3 are separated by 1 μm, the far-ultraviolet light is diffracted to form a photosensitive portion 5 having a width wider than the pattern width of the photomask 3 and a depth of 0.2 μm. Next, the photoresist 2 is etched as shown in FIG. The photoresist 2 below the photosensitive portion 5 is under-etched to form a dummy gate 6 having a substantially T-shaped cross section.
【０００３】[0003]
【発明が解決しようとする課題】このような工程で形成
したサブミクロンオーダのダミーゲート６は、底部を
0.5μｍ以下に制御するために露光及び現像条件の一連
の設定を精密に行わなければならず、Ｔ字型の寸法を正
確に制御することが困難であった。また、フォトレジス
ト２を塗布するGaAs基板１のウエハ面上が加工のばらつ
きにより段差等を生じている場合には、形成されるダミ
ーゲート６にもばらつきが生じ均一性が低下する問題が
あった。The sub-micron-order dummy gate 6 formed by the above process has a bottom portion.
In order to control to 0.5 μm or less, a series of exposure and development conditions must be precisely set, and it was difficult to accurately control the T-shaped dimension. Further, when a step or the like is generated on the wafer surface of the GaAs substrate 1 on which the photoresist 2 is applied due to variations in processing, there is a problem in that the formed dummy gates 6 also vary and the uniformity deteriorates. ..
【０００４】本発明は、かかる事情に鑑みてなされたも
のであり、波長の異なる光を照射することにより、露光
及び現像条件の設定が簡単で、サブミクロンオーダの微
細なレジストパターン寸法を制御することができ、ウエ
ハ面状態に関わらずばらつきが少なく均一なパターンを
形成することができる、パターン形成方法を提供するこ
とを目的とする。The present invention has been made in view of the above circumstances, and by irradiating light with different wavelengths, exposure and development conditions can be set easily, and a fine resist pattern dimension on the order of submicrons can be controlled. It is an object of the present invention to provide a pattern forming method capable of forming a uniform pattern with little variation regardless of the wafer surface state.
【０００５】[0005]
【課題を解決するための手段】本発明に係るパターン形
成方法は、フォトマスクを用いて、フォトレジストを感
光させ、これにパターンを形成する方法において、感光
波長に応じて吸収係数が異なるフォトレジストに、吸収
係数が小さい波長の光を照射し露光する工程と、前記フ
ォトマスク及び前記フォトレジストの距離を前工程より
も大きくして、吸収係数が大きい波長の光を照射し露光
する工程とを有することを特徴とするパターン形成方
法。A pattern forming method according to the present invention is a method of exposing a photoresist using a photomask and forming a pattern on the photoresist, wherein the photoresist has a different absorption coefficient depending on a photosensitive wavelength. And a step of irradiating and exposing with light having a wavelength having a small absorption coefficient, and a step of irradiating and exposing with light having a wavelength having a large absorption coefficient by making the distance between the photomask and the photoresist larger than in the previous step. A method for forming a pattern, which comprises:
【０００６】[0006]
【作用】本発明のパターン形成方法では、後工程にてフ
ォトマスクとフォトレジストとの間隔が広がることによ
り光の回折が大きくなり、前工程で感光させた底部より
も大きい寸法で表面部分を感光させることができる。こ
れに対して前工程では、吸収係数が小さい波長の光をフ
ォトマスクを通して照射することによりフォトレジスト
をその底部まで感光させ、またフォトマスク及びフォト
レジストの距離が後工程よりも小さいことから、フォト
レジストパターンの底部の寸法を精密に制御することが
できる。In the pattern forming method of the present invention, since the distance between the photomask and the photoresist is increased in the subsequent step, the diffraction of light is increased, and the surface portion is exposed with a size larger than the bottom exposed in the previous step. Can be made On the other hand, in the previous step, the photoresist is exposed to the bottom by irradiating light having a wavelength with a small absorption coefficient through the photomask, and because the distance between the photomask and the photoresist is smaller than that in the subsequent step, The size of the bottom of the resist pattern can be precisely controlled.
【０００７】[0007]
【実施例】以下、本発明をその実施例を示す図面に基づ
き具体的に説明する。図２は本発明によりフォトレジス
トにサブミクロンオーダのパターンを形成する工程を示
す模式的断面図である。形成されるフォトレジストはセ
ルフアライン型イオン注入を行うためのダミーゲートで
あり、断面形状がＴ字型を成しその底部は 0.5μｍ以下
である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. FIG. 2 is a schematic sectional view showing a process of forming a sub-micron-order pattern on a photoresist according to the present invention. The photoresist formed is a dummy gate for performing self-aligned ion implantation, and has a T-shaped cross section with a bottom of 0.5 μm or less.
【０００８】まずフォトレジストであるＬＭＲについて
説明する。図３は紫外光の波長によるＬＭＲの透過率の
変化を表すグラフであり、横軸は波長、縦軸は透過率を
示している。ＬＭＲは紫外光の波長により透過率が異な
るネガ型のフォトレジストであり、短波長ほど透過率は
低い。本実施例では、500nm の紫外光の照射ではＬＭＲ
の表面から１μｍの深さまで感光し、260nm の遠紫外光
の照射ではＬＭＲの表面から 0.2μｍの深さまで感光す
る。このＮＭＲのフォトレジスト２を、図２(a) に示す
ようにGaAsの基板１上に１μｍ塗布する。フォトマスク
３をフォトレジスト２に密着させて配置し、500nmの紫
外光を照射する。フォトマスク３が有するパターンが幅
を同じくしてフォトレジスト２に感光され、１μｍの深
さの感光部16が形成される。First, the LMR which is a photoresist will be described. FIG. 3 is a graph showing changes in the transmittance of LMR according to the wavelength of ultraviolet light, where the horizontal axis represents wavelength and the vertical axis represents transmittance. LMR is a negative photoresist whose transmittance differs depending on the wavelength of ultraviolet light, and the shorter the wavelength, the lower the transmittance. In this embodiment, the LMR is obtained by irradiation with 500 nm ultraviolet light.
The surface of the LMR is exposed to a depth of 1 μm, and the far-UV light of 260 nm is exposed to a depth of 0.2 μm from the surface of the LMR. This NMR photoresist 2 is applied to a GaAs substrate 1 in a thickness of 1 μm as shown in FIG. The photomask 3 is placed in close contact with the photoresist 2 and irradiated with ultraviolet light of 500 nm. The pattern of the photomask 3 has the same width and is exposed to the photoresist 2 to form a photosensitive portion 16 having a depth of 1 μm.
【０００９】次に、図２(b) に示すように、フォトマス
ク３を水平移動なしにフォトレジスト２から１μｍ離隔
した位置に移動し、 260nmの遠紫外光を照射する。遠紫
外光の回折のために、フォトレジスト２はフォトマスク
３が有するパターン幅よりも広く感光し、深さ 0.2μｍ
の感光部17が形成される。そして図２(c) に示すように
フォトレジスト２をエッチングしてＴ型ダミーゲート18
を形成する。このような方法で、サブミクロンオーダの
Ｔ型ダミーゲートの寸法を精度良く制御して形成するこ
とができる。Next, as shown in FIG. 2B, the photomask 3 is moved to a position 1 μm away from the photoresist 2 without horizontal movement, and far ultraviolet light of 260 nm is irradiated. Due to the diffraction of far-ultraviolet light, the photoresist 2 is exposed wider than the pattern width of the photomask 3 and has a depth of 0.2 μm.
The photosensitive part 17 is formed. Then, as shown in FIG. 2C, the photoresist 2 is etched to form a T-type dummy gate 18
To form. By such a method, it is possible to form the sub-micron-order T-type dummy gate while controlling the dimension thereof with high accuracy.
【００１０】[0010]
【発明の効果】以上のように、本発明のパターン形成方
法においては露光及び現像条件の設定が簡単で、ウエハ
面状態に関わらずサブミクロンオーダのパターン寸法を
制御することができる等、本発明は優れた効果を奏する
ものである。As described above, in the pattern forming method of the present invention, the exposure and development conditions can be easily set, and the pattern dimension of the submicron order can be controlled regardless of the wafer surface state. Has an excellent effect.
【図１】従来の光露光法によりフォトレジストにパター
ンを形成する工程を示す模式的断面図である。FIG. 1 is a schematic cross-sectional view showing a step of forming a pattern on a photoresist by a conventional light exposure method.
【図２】本発明によりフォトレジストにパターンを形成
する工程を示す模式的断面図である。FIG. 2 is a schematic cross-sectional view showing a step of forming a pattern on a photoresist according to the present invention.
【図３】紫外光の波長によるＬＭＲの透過率の変化を表
すグラフである。FIG. 3 is a graph showing changes in the transmittance of LMR according to the wavelength of ultraviolet light.
２，８， フォトレジスト ３, フォトマスク ６, 18, パターン 2,8, photoresist 3, photomask 6,18, pattern
Claims (1)
を感光させ、これにパターンを形成する方法において、
感光波長に応じて吸収係数が異なるフォトレジストに、
吸収係数が小さい波長の光を照射し露光する工程と、前
記フォトマスク及び前記フォトレジストの距離を前工程
よりも大きくして、吸収係数が大きい波長の光を照射し
露光する工程とを有することを特徴とするパターン形成
方法。1. A method of exposing a photoresist using a photomask and forming a pattern on the photoresist,
For photoresists with different absorption coefficients depending on the photosensitive wavelength,
It has a step of irradiating and exposing with light of a wavelength having a small absorption coefficient, and a step of irradiating and exposing with light of a wavelength with a large absorption coefficient by making the distance between the photomask and the photoresist larger than in the previous step. A method for forming a pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4069067A JPH05226210A (en) | 1992-02-17 | 1992-02-17 | Pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4069067A JPH05226210A (en) | 1992-02-17 | 1992-02-17 | Pattern formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05226210A true JPH05226210A (en) | 1993-09-03 |
Family
ID=13391863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4069067A Pending JPH05226210A (en) | 1992-02-17 | 1992-02-17 | Pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05226210A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528270U (en) * | 1991-07-26 | 1993-04-16 | 株式会社ニトムズ | Hook with magnet |
-
1992
- 1992-02-17 JP JP4069067A patent/JPH05226210A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0528270U (en) * | 1991-07-26 | 1993-04-16 | 株式会社ニトムズ | Hook with magnet |
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