JPH05218263A - Lead frame and resin-molded semiconductor device using same - Google Patents
Lead frame and resin-molded semiconductor device using sameInfo
- Publication number
- JPH05218263A JPH05218263A JP1640992A JP1640992A JPH05218263A JP H05218263 A JPH05218263 A JP H05218263A JP 1640992 A JP1640992 A JP 1640992A JP 1640992 A JP1640992 A JP 1640992A JP H05218263 A JPH05218263 A JP H05218263A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- die pad
- lead frame
- semiconductor device
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、水蒸気によるパッケ
ージクラックの発生を防止する対策が施された樹脂封止
型半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device provided with measures for preventing the occurrence of package cracks due to water vapor.
【０００２】[0002]
【従来の技術】図４及び図５を用いて従来技術のリード
フレーム及び樹脂封止型半導体装置を説明する。図４は
従来技術の一構成単位のリードフレームの平面図を示
し、図５は図４に示したリードフレームを用い、Ａ−Ａ
線上から見た従来技術の樹脂封止型半導体装置の断面図
を示す。2. Description of the Related Art A conventional lead frame and resin-sealed semiconductor device will be described with reference to FIGS. FIG. 4 is a plan view of a lead frame which is one structural unit of the prior art, and FIG. 5 uses the lead frame shown in FIG.
1 is a cross-sectional view of a conventional resin-encapsulated semiconductor device viewed from above.
【０００３】従来技術のリードフレーム３は、ダイパッ
ド４と、この周辺部に所定の配列で配置されたインナー
リード５と、これらに対応したアウターリード６などと
を一構成単位とし、この一単位を複数形成して構成され
ている。符号７はダイパッド４の両端を各ステー８に接
続している吊りであって、これらの吊り７の斜線を施し
た部分で折り曲げられ、ダイパッド４はディプレスされ
ている。The lead frame 3 of the prior art has a die pad 4, an inner lead 5 arranged in a predetermined arrangement around the die pad 4, an outer lead 6 corresponding to the die pad 4, and the like as one unit. It is configured by forming a plurality. Reference numeral 7 is a suspension that connects both ends of the die pad 4 to each stay 8, and is bent at the shaded portions of these suspensions 7, and the die pad 4 is depressed.
【０００４】このようなリードフレーム３のダイパッド
４に半導体チップ２を銀ペーストなどを用いてダイボン
ドし、図示していないが半導体チップ２の各電極を各イ
ンナーリード５に金、アルミなどのワイヤ９で接続し、
エポキシ樹脂のような封止樹脂１０でモールドし、硬化
させ、パッケージ１１としている。封止樹脂１０が硬化
した後、ステー８を吊り７の部分で切断し、同時に各ア
ウターリード６を所定の長さ及び形状に切断し、曲げ加
工を施すと、図５に示したような構成の樹脂封止型半導
体装置１となる。The semiconductor chip 2 is die-bonded to the die pad 4 of the lead frame 3 using silver paste or the like, and each electrode of the semiconductor chip 2 is connected to each inner lead 5 by a wire 9 of gold, aluminum or the like, which is not shown. Connect with
A package 11 is obtained by molding with a sealing resin 10 such as epoxy resin and curing. After the sealing resin 10 is hardened, the stay 8 is cut at the portion of the suspension 7, and at the same time, each outer lead 6 is cut into a predetermined length and shape, and subjected to a bending process. The resin-encapsulated semiconductor device 1 is obtained.
【０００５】[0005]
【発明が解決しようとする課題】しかし、このような樹
脂封止型半導体装置１は、外界から吸湿した水分等が封
止樹脂１０内を拡散により広がり、ダイパッド４の裏面
に集まり、このような状態の樹脂封止型半導体装置１を
電気回路配線基板に実装すると、その際に加えられる熱
によって、その水分等が蒸気となり、その蒸気圧が高ま
り、その蒸気がパッケージ１１を破壊する、所謂パッケ
ージクラックが発生する。この発明では、このようなパ
ッケージクラックの発生を防止することを目的とするも
のである。However, in such a resin-encapsulated semiconductor device 1, moisture absorbed from the outside spreads in the encapsulation resin 10 by diffusion and collects on the back surface of the die pad 4, When the resin-encapsulated semiconductor device 1 in the state is mounted on an electric circuit wiring board, the heat applied at that time causes the moisture or the like to turn into steam, and the steam pressure increases, so that the steam destroys the package 11. Cracks occur. The present invention aims to prevent the occurrence of such package cracks.
【０００６】[0006]
【課題を解決するための手段】それ故、この発明の樹脂
封止型半導体装置では、ダイパッドとその周辺に配置し
た複数のインナーリードとこれらと対応したアウターリ
ードとそれらのインナーリードの間に複数の細条突起か
らなる蒸気減圧手段を形成したリードフレームの、前記
ダイパッドに半導体チップを搭載して、封止樹脂でパッ
ケージした場合に、前記蒸気減圧手段がそのパッケージ
の表面に露出させるように構成した。Therefore, in the resin-sealed semiconductor device of the present invention, a plurality of inner leads arranged around the die pad, outer leads corresponding to these die pads, and the inner leads are provided. When the semiconductor chip is mounted on the die pad of the lead frame having the vapor pressure reducing means composed of the striped protrusions and packaged with the sealing resin, the vapor pressure reducing means is exposed on the surface of the package. did.
【０００７】[0007]
【作用】従って、前記の蒸気をこれらの露出した蒸気減
圧手段を通じて減圧することができる。Therefore, the vapor can be decompressed through these exposed vapor decompressing means.
【０００８】[0008]
【実施例】以下、この発明のリードフレーム及び樹脂封
止型半導体装置を図を用いて説明する。図１はこの発明
の一構成単位のリードフレームの一実施例を示した平面
図であり、図２は図１に示したリードフレームを用い、
Ａ−Ａ線上から見たこの発明の樹脂封止型半導体装置の
断面図であり、そして図３は図１のリードフレームに搭
載した半導体チップを樹脂封止する場合の状態を説明す
るための断面図である。なお、図４及び図５に示したリ
ードフレーム及び樹脂封止型半導体装置と同一の構成部
分には同一の符号を付し、それらの構成及び説明を省略
する。そして、この実施例ではＳＯＰ型樹脂封止型半導
体装置を採り挙げたが、この発明はＱＦＰ型等のものに
も適用できることを付言しておく。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A lead frame and a resin-sealed semiconductor device of the present invention will be described below with reference to the drawings. 1 is a plan view showing an embodiment of a lead frame which is one structural unit of the present invention, and FIG. 2 uses the lead frame shown in FIG.
FIG. 3 is a cross-sectional view of the resin-encapsulated semiconductor device of the present invention seen from the AA line, and FIG. 3 is a cross-section for explaining the state when the semiconductor chip mounted on the lead frame of FIG. 1 is resin-encapsulated. It is a figure. The same components as those of the lead frame and the resin-sealed semiconductor device shown in FIGS. 4 and 5 are designated by the same reference numerals, and their configuration and description will be omitted. Although the SOP type resin-encapsulated semiconductor device is used in this embodiment, it should be added that the present invention can be applied to QFP type devices.
【０００９】先ず、この発明の一つのリードフレーム３
Ａを説明する。この発明のリードフレーム３Ａにおいて
は、図１に示したように、インナーリード５の間に位置
するように、ダイパッド４に連なって細条突起２０を形
成した。細条突起２０はできるだけ多く形成することが
望ましく、この実施例では吊り７の近傍に形成されたイ
ンナーリード５を除いた他のダイパッド４の側縁部に等
間隔で配列されたインナーリード５の全ての間に形成し
た。First, one lead frame 3 of the present invention.
A will be described. In the lead frame 3A of the present invention, as shown in FIG. 1, the strip projections 20 are formed so as to be located between the inner leads 5 so as to be continuous with the die pad 4. It is desirable to form as many strip protrusions 20 as possible, and in this embodiment, the inner leads 5 arranged at equal intervals on the side edges of the other die pads 4 except the inner leads 5 formed near the suspension 7. Formed between all.
【００１０】この細条突起２０はできるだけ弱く構成す
ることが望ましく、細くそしてハーフエッチングすると
よい。細条突起２０のダイパッド４と連なっている基部
２１はＶ字型に形成して、その細条突起２０をしっかり
保持する構造にした。It is desirable that the strip projections 20 are made as weak as possible, and they are preferably thin and half-etched. The base portion 21 of the strip projection 20 which is continuous with the die pad 4 is formed in a V shape so as to firmly hold the strip projection 20.
【００１１】また、細条突起２０の長さは、後述するよ
うに樹脂封止すると、その先端部２２が多少撓んでパッ
ケージ１１の表面１２と同一面を形成するように露出で
きる長さとし、特別に切断する必要がないように構成し
た。このように構成すると、リードフレームの構成を変
更するだけで、従来技術で使用された各種設備を流用す
ることができる。この細条突起２０はダイパッド４を外
界に晒すものであれば、形状、構造は問わない。Further, the length of the strip projection 20 is such that, when it is sealed with resin as will be described later, the tip portion 22 of the strip projection 20 is slightly bent so that it can be exposed so as to form the same surface as the surface 12 of the package 11. Configured so that there is no need to disconnect. With this configuration, it is possible to use the various equipment used in the related art simply by changing the configuration of the lead frame. The strip projection 20 may have any shape and structure as long as it exposes the die pad 4 to the outside.
【００１２】このようなリードフレーム３Ａのダイパッ
ド４に半導体チップ２を銀ペースト等でダイボンドし、
半導体チップ２の各電極を各インナーリード５にワイヤ
９で接続し、封止樹脂１０でモールドする。The semiconductor chip 2 is die-bonded to the die pad 4 of the lead frame 3A with silver paste or the like,
Each electrode of the semiconductor chip 2 is connected to each inner lead 5 with a wire 9, and is molded with a sealing resin 10.
【００１３】この場合、図３に示したように、下金型３
０の内側壁３２に細条突起２０が当接するように、半導
体チップ２を搭載したリードフレーム３Ａを下金型３０
に入れる。細条突起２０は前述のような長さ等の構造に
定めてあるので、これらの細条突起２０は、殆ど全体の
自重で下がり、細条突起２０は上方に僅かに撓む。In this case, as shown in FIG. 3, the lower mold 3
The lead frame 3A on which the semiconductor chip 2 is mounted is attached to the lower mold 30 so that the strip protrusions 20 come into contact with the inner wall 32 of the lower mold 30.
Put in. Since the strip projections 20 are defined by the structure such as the length as described above, the strip projections 20 are lowered by almost the entire weight of the strip projections 20 and the strip projections 20 are slightly bent upward.
【００１４】このように配置した後、上金型３１を被せ
て、この金型に封止樹脂１０を注入し、トランスファー
モールドする。モールドの範囲は、図１の２点鎖線Ｌで
囲んだ内部である。After arranging as described above, the upper mold 31 is covered, and the sealing resin 10 is injected into this mold and transfer molding is performed. The range of the mold is the inside surrounded by the chain double-dashed line L in FIG.
【００１５】そうすると、前記細条突起２０の先端部２
２はパッケージ１１の側面１２と同一面を形成し、外界
に露出するので、ダイパッド４を外界に晒す状態になる
ので、前記水分等による蒸気をダイパッド４及び複数の
細条突起２０と封止樹脂１０との極僅かな隙間を通じて
外界に放出することができる。この実施例ではこの細条
突起２０とこのパッケージ１１の側面１２とで蒸気減圧
手段が構成されている。Then, the tip portion 2 of the strip projection 20 is formed.
2 forms the same surface as the side surface 12 of the package 11 and is exposed to the outside world, so that the die pad 4 is exposed to the outside world. Therefore, the vapor due to the moisture or the like is used for the die pad 4 and the plurality of strip projections 20 and the sealing resin. It can be released to the outside through a very small gap with 10. In this embodiment, the strip projection 20 and the side surface 12 of the package 11 constitute a vapor pressure reducing means.
【００１６】封止樹脂１０が硬化すると、アウターリー
ド６を所定の長さ及び形状に切断し、曲げ加工を施す
と、この発明の樹脂封止型半導体装置１Ａを得ることが
できる。When the encapsulating resin 10 is hardened, the outer leads 6 are cut into a predetermined length and shape and subjected to a bending process to obtain the resin-encapsulated semiconductor device 1A of the present invention.
【００１７】[0017]
【発明の効果】以上の説明から明らかなように、この発
明の樹脂封止型半導体装置は、外界から吸湿した水分等
が封止樹脂内を拡散によりダイパッドの裏面に集めら
れ、このような樹脂封止型半導体装置を電気回路配線基
板に実装した場合に、その時の熱でその水分等が加熱さ
れ、水蒸気となり、圧力が高められたとしても、前記蒸
気減圧手段により減圧することができ、従来技術に見ら
れたようなパッケージクラックが発生しにくくなる。ま
た、この発明では、リードフレームの構成を変更するだ
けで、従来技術に用いた製造設備を流用することができ
るので、製造コストには響かないなどという優れた効果
がある。As is apparent from the above description, in the resin-encapsulated semiconductor device of the present invention, moisture or the like absorbed from the outside is diffused in the encapsulating resin and collected on the back surface of the die pad. When the encapsulated semiconductor device is mounted on an electric circuit wiring board, the moisture and the like are heated by the heat at that time to become water vapor, and even if the pressure is increased, the pressure can be reduced by the vapor pressure reducing means. The package cracks as seen in the technology are less likely to occur. Further, according to the present invention, since the manufacturing equipment used in the prior art can be used simply by changing the structure of the lead frame, there is an excellent effect that it does not affect the manufacturing cost.
【００１８】[0018]
【図１】この発明の一構成単位のリードフレームの一実
施例を示した平面図である。FIG. 1 is a plan view showing an embodiment of a lead frame which is one structural unit of the present invention.
【図２】図１に示したリードフレームを用い、Ａ−Ａ線
上から見たこの発明の樹脂封止型半導体装置の断面図で
ある。FIG. 2 is a cross-sectional view of the resin-sealed semiconductor device of the present invention seen from the line AA using the lead frame shown in FIG.
【図３】図１のリードフレームに搭載した半導体チップ
を樹脂封止する場合の状態を説明するための断面図であ
る。FIG. 3 is a cross-sectional view for explaining a state in which a semiconductor chip mounted on the lead frame of FIG. 1 is resin-sealed.
【図４】従来技術の一構成単位のリードフレームを示し
た平面図である。FIG. 4 is a plan view showing a lead frame which is one structural unit of the prior art.
【図５】図４に示したリードフレームを用い、Ａ−Ａ線
上から見た従来技術の樹脂封止型半導体装置の断面図で
ある。5 is a cross-sectional view of a conventional resin-sealed semiconductor device using the lead frame shown in FIG. 4 as seen from the line AA.
１Ａ 樹脂封止型半導体装置 ２ 半導体チップ ３Ａ リードフレーム ４ ダイパッド ５ インナーリード ６ アウターリード ７ 吊り ８ ステー ９ ワイヤ １０ 封止樹脂 １１ パッケージ １２ 側面 ２０ 細条突起 ２２ 先端部 ３０ 下金型 ３２ 内側壁 1A Resin-encapsulated semiconductor device 2 Semiconductor chip 3A Lead frame 4 Die pad 5 Inner lead 6 Outer lead 7 Hanging 8 Stay 9 Wire 10 Encapsulating resin 11 Package 12 Side surface 20 Fine protrusion 22 Tip part 30 Lower die 32 Inner wall
Claims (3)
ンナーリードとこれらと対応したアウターリードとから
なるリードフレームにおいて、該インナーリードの間に
細条突起を形成したことを特徴とするリードフレーム。1. A lead frame composed of a die pad, a plurality of inner leads arranged around the die pad, and outer leads corresponding to the die pads, wherein strip protrusions are formed between the inner leads.
脂封止型半導体装置。2. A resin-sealed semiconductor device provided with vapor pressure reducing means exposed to the outside.
条突起で構成されていることを特徴とする請求項２に記
載の樹脂封止型半導体装置。3. The resin-encapsulated semiconductor device according to claim 2, wherein the vapor pressure reducing means is composed of the strip projection described in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1640992A JP3134445B2 (en) | 1992-01-31 | 1992-01-31 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1640992A JP3134445B2 (en) | 1992-01-31 | 1992-01-31 | Resin-sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05218263A true JPH05218263A (en) | 1993-08-27 |
| JP3134445B2 JP3134445B2 (en) | 2001-02-13 |
Family
ID=11915444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1640992A Expired - Fee Related JP3134445B2 (en) | 1992-01-31 | 1992-01-31 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3134445B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129808A (en) * | 1995-10-31 | 1997-05-16 | Nec Corp | Plastic molded semiconductor device and its manufacture |
| KR100476667B1 (en) * | 1997-09-25 | 2005-08-10 | 삼성전자주식회사 | Lead frame and semiconductor chip package using the same |
| JP2007251217A (en) * | 2007-07-06 | 2007-09-27 | Renesas Technology Corp | Semiconductor device |
-
1992
- 1992-01-31 JP JP1640992A patent/JP3134445B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09129808A (en) * | 1995-10-31 | 1997-05-16 | Nec Corp | Plastic molded semiconductor device and its manufacture |
| KR100252737B1 (en) * | 1995-10-31 | 2000-04-15 | 가네꼬 히사시 | Resin-sealed semiconductor device and its manufacture |
| KR100476667B1 (en) * | 1997-09-25 | 2005-08-10 | 삼성전자주식회사 | Lead frame and semiconductor chip package using the same |
| JP2007251217A (en) * | 2007-07-06 | 2007-09-27 | Renesas Technology Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3134445B2 (en) | 2001-02-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |