JPH05206565A - Semiconductor laser element - Google Patents
Semiconductor laser elementInfo
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- JPH05206565A JPH05206565A JP13932091A JP13932091A JPH05206565A JP H05206565 A JPH05206565 A JP H05206565A JP 13932091 A JP13932091 A JP 13932091A JP 13932091 A JP13932091 A JP 13932091A JP H05206565 A JPH05206565 A JP H05206565A
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、シリコン（Ｓｉ）基板
の電子回路と化合物半導体の光デバイスを融合させた光
電子集積回路の実現に重要な役割をになう半導体レーザ
素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device which plays an important role in realizing an optoelectronic integrated circuit in which an electronic circuit of a silicon (Si) substrate and an optical device of a compound semiconductor are fused.
【０００２】[0002]
【従来の技術】従来、この種の半導体レーザ素子として
は、チェン 他 「アプライド・フィジックス・レター
ズ」第５１巻，１７号（１９８７年）第１３２０〜１３
２１頁「シリコン（１００）基板上の低閾値（室温で６
００Ａ／ｃｍ2 以下）ＧａＡｓ／ＡｌＧａＡｓレーザ」
〔Ｈ．Ｚ．Ｃｈｅｎ ｅｔ ａｌ．「ＡｐｐｌｉｅｄＰ
ｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ」ｖｏｌ．５１ Ｎｏ．
１７（１９８７）Ｐ．１３２０〜１３２１ 「Ｌｏｗ−
ｔｈｒｅｓｈｏｌｄ（〜６００Ａ／ｃｍ2 ａｔｒｏｏｍ
ｔｅｍｐｅｒａｔｕｒｅ）ＧａＡｓ／ＡｌＧａＡｓ
ｌａｓｅｒｓｏｎ Ｓｉ（１００）」〕に記載されるも
のがあった。2. Description of the Related Art Conventionally, as a semiconductor laser device of this type, Chen et al., "Applied Physics Letters", Vol. 51, No. 17, (1987), 1320-1213.
Page 21, "Low threshold on silicon (100) substrates (6 at room temperature
00A / cm 2 or less) GaAs / AlGaAs laser "
[H. Z. Chen et al. "AppliedP
hysics Letters "vol. 51 No.
17 (1987) P. 1320-1321 "Low-
threshold (~ 600A / cm 2 at room
temperature) GaAs / AlGaAs
laserson Si (100) ”].
【０００３】即ち、分子線エピタキシャル（ＭＢＥ）法
によって、ｎ型Ｓｉ（１００）基板上に、バッファ層、
ｎ−ＡｌＧａＡｓクラッド層、アルミニウムの組成を連
続的に変化させて屈折率に傾斜をつけたＡｌＧａＡｓ−
ＧＲＩＮ層、ＧａＡｓ単一量子井戸活性層、ＡｌＧａＡ
ｓ−ＧＲＩＮ層、ｐ−ＡｌＧａＡｓクラッド層、ｐ−Ｇ
ａＡｓコンタクト層からなるレーザ構造を成長させ、半
導体レーザ素子を形成していた。That is, by a molecular beam epitaxial (MBE) method, a buffer layer, an n-type Si (100) substrate,
n-AlGaAs clad layer, AlGaAs with a graded refractive index by continuously changing the composition of aluminum
GRIN layer, GaAs single quantum well active layer, AlGaA
s-GRIN layer, p-AlGaAs cladding layer, p-G
A semiconductor laser device was formed by growing a laser structure composed of an aAs contact layer.
【０００４】例えば、図２に示すように、ＧａＡｓ（２
μｍ）上に、ｎ−ＡｌＧａＡｓクラッド層としてのＡ
ｌ0.5 Ｇａ0.5 Ａｓ（１．５μｍ）、ＡｌＧａＡｓ−
ＧＲＩＮ層としてのＡｌ0.5 Ｇａ0.5 Ａｓ〜Ａｌ0.2 Ｇ
ａ0.8 Ａｓ（１７５０Å）、ＧａＡｓ単一量子井戸活
性層としてのＧａＡｓ（７０Å）、ＡｌＧａＡｓ−Ｇ
ＲＩＮ層としてのＡｌ0.5 Ｇａ0.5 Ａｓ〜Ａｌ0.2 Ｇａ
0.8 Ａｓ（１７５０Å）、ｐ−ＡｌＧａＡｓクラッド
層としてのＡｌ0.5 Ｇａ0.5 Ａｓ（１．５μｍ）、ｐ
−ＧａＡｓコンタクト層としてのＧａＡｓ（０．４μ
ｍ）を順次成長させる。For example, as shown in FIG.
μm) on top of A as an n-AlGaAs cladding layer
l 0.5 Ga 0.5 As (1.5 μm), AlGaAs-
Al 0.5 Ga 0.5 As to Al 0.2 G as GRIN layer
a 0.8 As (1750Å), GaAs (70Å) as a GaAs single quantum well active layer, AlGaAs-G
Al 0.5 Ga 0.5 As to Al 0.2 Ga as RIN layer
0.8 As (1750 Å), Al 0.5 Ga 0.5 As (1.5 μm) as p-AlGaAs cladding layer, p
-GaAs as a GaAs contact layer (0.4 μ
m) are successively grown.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、上記の
半導体レーザ素子は、Ｓｉ基板に格子整合しない化合物
半導体をＳｉ基板の全面に形成しているため、結晶欠陥
が多く、素子の寿命が非常に短いという問題点があっ
た。本発明は、以上述べた結晶欠陥に伴う問題点を除去
し、Ｓｉ基板上に形成され、結晶欠陥の発生を軽減でき
ると共に、ドーパントの極性を面方位によりコントロー
ルして電流の閉じ込める構造を持ち、同時に各原子のマ
イグレーションの面方位依存性の差により、光の閉じ込
め構造を持つ信頼性の高い、しかも寿命の長い半導体レ
ーザ素子を提供することを目的とする。However, in the above-mentioned semiconductor laser device, since the compound semiconductor which is not lattice-matched to the Si substrate is formed on the entire surface of the Si substrate, there are many crystal defects and the life of the device is very short. There was a problem. The present invention eliminates the problems associated with crystal defects described above, is formed on a Si substrate, can reduce the occurrence of crystal defects, and has a structure for confining the current by controlling the polarity of the dopant by the plane orientation, At the same time, it is an object of the present invention to provide a highly reliable semiconductor laser device having a light confinement structure and having a long life due to the difference in the plane orientation dependence of the migration of each atom.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記目的を達
成するために、半導体レーザ素子において、（１１１）
側面を持つ順メサストライプを構成したＳｉ（１００）
基板上への有機金属気相成長法による成長速度の面方位
依存性を利用したストライプ上へのみの選択成長膜を基
板として、分子線エピタキシャル成長法により両極性ド
ーパントの極性を制御することによって電流閉じ込めの
ための逆バイアス構造を持たせるとともに、各原子のマ
イグレーションの面方位依存性の差により光の閉じ込め
構造をストライプ上にのみ形成するようにしたものであ
る。In order to achieve the above object, the present invention provides a semiconductor laser device comprising a (111)
Si (100) with a regular mesa stripe with sides
Current confinement by controlling the polarities of ambipolar dopants by molecular beam epitaxy using the selective growth film only on stripes as a substrate, utilizing the plane orientation dependence of the growth rate by metalorganic vapor phase epitaxy on the substrate. In addition to having a reverse bias structure for, the optical confinement structure is formed only on the stripe due to the difference in the plane orientation dependence of the migration of each atom.
【０００７】[0007]
【作用】本発明によれば、ｎ型半導体に対する成長技術
である有機金属気相成長（ＭＯＶＰＥ）法によるＳｉ
（１００）基板上へのＧａＡｓのマスクレス選択成長技
術を用いて、（１１１）側面を有する順メサストライプ
上に、（１１１）Ｂ面、（１１１）Ａ面と（１００）面
を有するｎ型ＧａＡｓを選択成長して、格子不整合によ
り生じる結晶欠陥を低減した基板上に、ＭＢＥ成長法に
より量子井戸を活性層とするダブルヘテロ構造を形成
し、ＭＢＥ成長法による原子のマイグレーションの面方
位による違いと、Ｓｉドーパンの導電性の面方位依存性
により、屈折率導波機構と電流狭窄機構とを持つ半導体
レーザ素子を上記のストライプ上にのみ作り付ける。即
ち、Ｓｉ基板上にＭＯＶＰＥ法及びＭＢＥ成長法によ
り、狭いストライプ領域に選択的に半導体レーザを形成
しているために、結晶欠陥の発生を軽減できると共に、
ドーパントの極性を面方位によりコントロールして電流
の閉じ込める構造を持ち、同時に各原子のマイグレーシ
ョンの面方位依存性の差により、光の閉じ込め構造を持
つ信頼性の高い半導体レーザ素子を簡単に得ることがで
きる。According to the present invention, Si produced by metalorganic vapor phase epitaxy (MOVPE) is a growth technique for n-type semiconductors.
Using a maskless selective growth technique of GaAs on a (100) substrate, an n-type having a (111) B plane, a (111) A plane and a (100) plane on a forward mesa stripe having a (111) side plane. A double heterostructure having a quantum well as an active layer is formed by the MBE growth method on a substrate in which GaAs is selectively grown and crystal defects caused by lattice mismatch are reduced. Due to the difference and the plane orientation dependence of the conductivity of the Si dopant, a semiconductor laser device having a refractive index guiding mechanism and a current constriction mechanism is formed only on the stripe. That is, since the semiconductor laser is selectively formed in the narrow stripe region on the Si substrate by the MOVPE method and the MBE growth method, the occurrence of crystal defects can be reduced and
It has a structure in which the polarity of the dopant is controlled by the plane orientation to confine the current, and at the same time, due to the difference in the plane orientation dependence of the migration of each atom, it is possible to easily obtain a highly reliable semiconductor laser device having a light confinement structure. it can.
【０００８】[0008]
【実施例】以下、本発明の実施例を図面を参照しながら
詳細に説明する。図１は本発明の実施例を示す半導体レ
ーザ素子の製造工程断面図である。まず、図１（ａ）に
示すように、〈０−１１〉方向に３°オフカットしたｎ
−Ｓｉ（１００）基板１に、通常のフォトリソグラフィ
ー技術とＫＯＨとＨ2 Ｏの混合溶液による化学エッチン
グにより、〈０−１１〉方向に、幅５μｍ程度で、高さ
３μｍ程度の順メサストライプを設ける。この時、Ｓｉ
の順メサ側面は（１１１）面と（１−１−１）面により
形成される。引続き、プラズマ化学気相堆積（ＰＣＶ
Ｄ）法により、窒化シリコン絶縁膜２を２００ｎｍ程度
積層し、通常のフォトリソグラフィー技術と化学エッチ
ングにより、順メサ上部の窒化シリコン絶縁膜２を完全
に除去する。この時、メサ側面の窒化シリコン絶縁膜２
の一部を除去してもよい。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a sectional view of a semiconductor laser device manufacturing process showing an embodiment of the present invention. First, as shown in FIG. 1A, n cut off by 3 ° in the <0-11> direction is used.
On the Si (100) substrate 1, a normal photolithography technique and chemical etching with a mixed solution of KOH and H 2 O were used to form a forward mesa stripe with a width of about 5 μm and a height of about 3 μm in the <0-11> direction. Set up. At this time, Si
The normal mesa side surface of is formed by the (111) plane and the (1-1-1) plane. Continued plasma chemical vapor deposition (PCV
The silicon nitride insulating film 2 is laminated to a thickness of about 200 nm by the method D), and the silicon nitride insulating film 2 on the upper part of the forward mesa is completely removed by the usual photolithography technique and chemical etching. At this time, the silicon nitride insulating film 2 on the side surface of the mesa
May be partially removed.
【０００９】次に、図１（ｂ）に示すように、２段階有
機金属気相成長法を用いた選択成長技術により、２μｍ
程度ｎ−ＧａＡｓ層３を成長させる。該２段階有機金属
気相成長では、Ｓｉ（１１１）面及び（１−１−１）面
の順メサ側面には成長せず、Ｓｉ（１００）面上にのみ
（１１１）Ａ面、（１−１−１）Ａ面、（−１１１）Ｂ
面、（−１−１−１）Ｂ面と（１００）面により囲まれ
たｎ−ＧａＡｓ層３のストライプ構造が形成される。Next, as shown in FIG. 1B, 2 μm is formed by a selective growth technique using a two-step metal organic chemical vapor deposition method.
The n-GaAs layer 3 is grown to a degree. In the two-step metalorganic vapor phase epitaxy, the Si (111) plane and the (1-1-1) plane do not grow on the regular mesa side surfaces, but only on the Si (100) plane, the (111) A plane, (1 -1-1) A surface, (-111) B
Plane, the stripe structure of the n-GaAs layer 3 surrounded by the (-1-1-1) B plane and the (100) plane is formed.
【００１０】次いで、図１（ｃ）に示すように、ｎ−Ｇ
ａＡｓ層３を選択成長した基板上に、ＭＢＥ成長法を用
いてｎ−ＡｌＧａＡｓクラッド層４（１．５μｍ程
度）、アンドープのＧＲＩＮ−ＡｌＧａＡｓ層５（０．
１μｍ程度）、アンドープのＧａＡｓ単一量子井戸活性
層６、アンドープのＧＲＩＮ−ＡｌＧａＡｓ層７（０．
１μｍ程度）、ｐ−ＡｌＧａＡｓクラッド層８（１．５
μｍ程度）、ｐ−ＧａＡｓコンタクト層９（０．５μｍ
程度）を成長させる。この時、ｎ−ＧａＡｓ層３の下部
の窒化シリコン絶縁膜２上には、III 族原子の分子線ビ
ームが到達しないために成長が起こらないので、局所的
なストライプ領域にのみ半導体レーザが構築され、結晶
欠陥の発生を抑えることができる。Next, as shown in FIG. 1C, n-G
On the substrate on which the aAs layer 3 was selectively grown, an n-AlGaAs cladding layer 4 (about 1.5 μm) and an undoped GRIN-AlGaAs layer 5 (0.
1 μm), an undoped GaAs single quantum well active layer 6, and an undoped GRIN-AlGaAs layer 7 (0.
1 μm), p-AlGaAs cladding layer 8 (1.5
μm), p-GaAs contact layer 9 (0.5 μm)
Grow). At this time, since the molecular beam of group III atoms does not reach the silicon nitride insulating film 2 below the n-GaAs layer 3, no growth occurs, so that the semiconductor laser is constructed only in the local stripe region. The occurrence of crystal defects can be suppressed.
【００１１】更に、ＭＢＥ成長法では、成長速度の面方
位依存性により、（１１１）Ａ面と（１００）面の境界
付近では（１１１）Ａより高次の（Ｎ１１）Ａ面（Ｎは
３以下の整数）が生じ、これら面でのＧａのマイグレー
ションが大きいために、ＡｌＧａＡｓのＡｌの組成が大
きくなるので、電流も流れにくくなり、屈折率導波機構
も作り付けることができる。Further, in the MBE growth method, due to the plane orientation dependence of the growth rate, the (N11) A plane (N is 3) higher than (111) A near the boundary between the (111) A plane and the (100) plane. (The following integers) occur, and the migration of Ga on these surfaces is large, so that the Al composition of AlGaAs is large, so that it is difficult for current to flow and a refractive index guiding mechanism can be built.
【００１２】また、ｎ−ＡｌＧａＡｓクラッド層４のド
ーピング原子として、Ｓｉを用いることにより、（１０
０）面ではｎ型で、（Ｎ１１）Ａ面ではｐ型の導電性を
示すので、電流狭窄も実現できる。次に、図１（ｄ）に
示すように、ポリイミドによりストライプ領域を埋め込
み、酸素プラズマを用いたアッシングにより、ｐ−Ｇａ
Ａｓコンタクト層９の（１００）面を露出させ、ｐ側電
極１１を形成する。次に、裏面にｎ側電極１２を形成す
る。次に、ドライエッチングあるいはへき開によってレ
ーザ端面を形成する。ストライプ領域以外の、成長層は
必要なら取り除いてもよい。Further, by using Si as a doping atom of the n-AlGaAs cladding layer 4, (10
Since the (0) plane exhibits n-type conductivity and the (N11) A plane exhibits p-type conductivity, current confinement can also be realized. Next, as shown in FIG. 1D, the stripe region was filled with polyimide, and p-Ga was formed by ashing using oxygen plasma.
The (100) surface of the As contact layer 9 is exposed and the p-side electrode 11 is formed. Next, the n-side electrode 12 is formed on the back surface. Next, the laser end face is formed by dry etching or cleavage. The growth layer other than the stripe region may be removed if necessary.
【００１３】ここで、ｎ型半導体に対する成長技術であ
る有機金属気相成長（ＭＯＶＰＥ）法によるＳｉ（１０
０）基板上へのＧａＡｓのマスクレス選択成長技術につ
いては、〔橋本他 ジャーナル・オブ・アプライド・フ
ィジックス、第６６巻、第１１号（１９８９）、第５５
３６〜５５４１頁「Ｖ溝を有するＳｉ基板上へのＡｌＧ
ａＡｓの選択成長及び光学的特性」〔Ａ．Ｈａｓｈｉｍ
ｏｔｏ ｅｔ ａｌ．（Ｊｏｕｒｎａｌ ｏｆ Ａｐｐ
ｌｉｅｄ Ｐｈｙｓｉｃｓ ｖｏｌ．６６，Ｎｏ．１１
１９８９年１２月１日 Ｐ．５５３６〜５５４１）
「Ｓｅｌｅｃｔｉｖｅ ｇｒｏｗｔｈ ａｎｄ ｏｐｔ
ｉｃａｌ ｐｒｏｐｅｒｔｉｅｓ ｏｆａｎ ＡｌＧａ
Ａｓ ｌａｙｅｒ ｏｎ Ｖ−ｇｒｏｏｖｅｄ Ｓｉ
ｓｕｂｓｔｒａｔｅｓ」〕によって示されている。Here, Si (10) by the metal organic chemical vapor deposition (MOVPE) method, which is a growth technique for n-type semiconductors, is used.
0) For maskless selective growth technology of GaAs on a substrate, see [Hashimoto et al., Journal of Applied Physics, Vol. 66, No. 11 (1989), No. 55.
Pages 36-5541 "AlG on Si substrate with V-grooves"
selective growth and optical characteristics of aAs [A. Hashim
oto et al. (Journal of App
lied Physics vol. 66, no. 11
December 1, 1989 P. 5536-5541)
"Selective grow and opt
ical properties of fan AlGa
As layer on V-grooved Si
substates "].
【００１４】このＭＯＶＰＥ法を用いて、（１１１）側
面を有する順メサストライプ上に、（１１１）Ｂ面、
（１１１）Ａ面と（１００）面を有するｎ型ＧａＡｓを
選択成長して、格子不整合により生じる結晶欠陥を低減
した基板上に、ＭＢＥ法により量子井戸を活性層とする
ダブルヘテロ構造を形成し、ＭＢＥ成長法による原子の
マイグレーションの面方位による違いと、Ｓｉドーパン
の導電性の面方位依存性により、屈折率導波機構と電流
狭窄機構とを持つ半導体レーザ素子を上記のストライプ
上にのみ作り付けるようにしている。Using this MOVPE method, a (111) B plane, a (111) B plane, on a forward mesa stripe having a (111) side plane,
A n-type GaAs having a (111) A plane and a (100) plane is selectively grown to form a double hetero structure using a quantum well as an active layer on a substrate in which crystal defects caused by lattice mismatch are reduced. However, a semiconductor laser device having a refractive index guiding mechanism and a current constriction mechanism is formed only on the above stripes due to the difference in the plane orientation of the migration of atoms by the MBE growth method and the plane orientation dependence of the conductivity of Si Dopan. I try to build it.
【００１５】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。The present invention is not limited to the above embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.
【００１６】[0016]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、Ｓｉ基板上にＭＯＶＰＥ法及びＭＢＥ成長法に
より、狭いストライプ領域に選択的に半導体レーザを形
成しているために、結晶欠陥の発生を軽減できると共
に、ドーパントの極性を面方位によりコントロールして
電流の閉じ込め構造を持ち、同時に各原子のマイグレー
ションの面方位依存性の差により、光の閉じ込め構造を
持つ信頼性の高い、寿命の長い半導体レーザ素子を簡単
に実現することができる。As described above in detail, according to the present invention, the semiconductor laser is selectively formed in the narrow stripe region on the Si substrate by the MOVPE method and the MBE growth method. While reducing the occurrence of defects, it has a current confinement structure by controlling the polarity of the dopant by the plane orientation, and at the same time, the reliability of having a light confinement structure due to the difference in the plane orientation dependence of the migration of each atom, A semiconductor laser device having a long life can be easily realized.
【００１７】更に、放熱性のよい大口径のＳｉ基板を利
用し、先進的な微細加工技術によるＳｉの大規模集積電
子回路としての優れた特性と化合物半導体の発光素子を
Ｓｉ基板上に集積化し、光の超並列性を利用した、高度
な光情報処理及び光通信等の広い分野に応用できる。Further, a large-diameter Si substrate having good heat dissipation is used, and excellent characteristics as a large-scale integrated electronic circuit of Si by an advanced microfabrication technique and a light emitting device of a compound semiconductor are integrated on the Si substrate. It can be applied to a wide range of fields such as advanced optical information processing and optical communication utilizing the super parallelism of light.
【図１】本発明の実施例を示す半導体レーザ素子の製造
工程断面図である。FIG. 1 is a sectional view of a manufacturing process of a semiconductor laser device showing an embodiment of the present invention.
【図２】従来の半導体レーザ素子の構成を示す図であ
る。FIG. 2 is a diagram showing a configuration of a conventional semiconductor laser device.
１ ｎ−Ｓｉ（１００）基板 ２ 窒化シリコン絶縁膜 ３ ｎ−ＧａＡｓ層 ４ ｎ−ＡｌＧａＡｓクラッド層 ５，７ ＧＲＩＮ−ＡｌＧａＡｓ層 ６ ＧａＡｓ単一量子井戸活性層 ８ ｐ−ＡｌＧａＡｓクラッド層 ９ ｐ−ＧａＡｓコンタクト層 1 n-Si (100) substrate 2 Silicon nitride insulating film 3 n-GaAs layer 4 n-AlGaAs clad layer 5, 7 GRIN-AlGaAs layer 6 GaAs single quantum well active layer 8 p-AlGaAs clad layer 9 p-GaAs contact layer
Claims (1)
を構成したＳｉ（１００）基板上への有機金属気相成長
法による成長速度の面方位依存性を利用したストライプ
上へのみの選択成長膜を基板として、分子線エピタキシ
ャル成長法により両極性ドーパントの極性を制御するこ
とによって電流閉じ込めのための逆バイアス構造を有す
るとともに、各原子のマイグレーションの面方位依存性
の差により光の閉じ込め構造をストライプ上にのみ形成
して成る半導体レーザ素子。1. A selective growth film only on a stripe utilizing the plane orientation dependence of the growth rate by metalorganic vapor phase epitaxy on a Si (100) substrate having a forward mesa stripe having (111) side faces. As a substrate, it has a reverse bias structure for current confinement by controlling the polarities of the bipolar dopants by molecular beam epitaxial growth method, and the light confinement structure is stripe-shaped due to the difference in the plane orientation dependence of the migration of each atom. A semiconductor laser device formed only on the.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13932091A JPH05206565A (en) | 1991-06-12 | 1991-06-12 | Semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13932091A JPH05206565A (en) | 1991-06-12 | 1991-06-12 | Semiconductor laser element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05206565A true JPH05206565A (en) | 1993-08-13 |
Family
ID=15242566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13932091A Withdrawn JPH05206565A (en) | 1991-06-12 | 1991-06-12 | Semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05206565A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7982205B2 (en) * | 2006-01-12 | 2011-07-19 | National Institute Of Advanced Industrial Science And Technology | III-V group compound semiconductor light-emitting diode |
-
1991
- 1991-06-12 JP JP13932091A patent/JPH05206565A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7982205B2 (en) * | 2006-01-12 | 2011-07-19 | National Institute Of Advanced Industrial Science And Technology | III-V group compound semiconductor light-emitting diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
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