JPH05203365A - Continuous treating device - Google Patents

Abstract

PURPOSE:To perform given treatment in a small space by a method wherein heat treatment is applied on an electronic part, such as a thick film integrated circuit, in clean atmosphere, and a plurality of treatment chamber groups are installed vertically movably and exchangeably of a position through rotation. CONSTITUTION:A plurality of partition walls 4 with a built-in planer heater are disposed in a furnace body 2 to form treatment chambers in a multilayer, and the furnace body 2 comprises first and second furnaces, 1-1 and 1-2 arranged back to back with each other with a pivot 6 therebetween serving as a center The pivot 6 has a function to rotate in a 180 deg. arc at a time in a clockwise direction and move in a vertical direction. The furnaces 1-1 and 1-2 are rotated and vertically moved around the pivot. After heat treatment is applied on a work W inputted to each treatment chamber through an input port 12, the work is outputted through an output port 13. An arcuate side wall 8 rising from the one end of a floor 7 is formed on the input port 12 side of a device 1 in a manner to extend to a central part and an arcuate side wall 9 is also arranged reversely to an upper half part on the output port 13 side. An opening 3 of each treatment chamber is formed such that a part or the whole thereof is shielded.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、連続処理装置、例えば
電子部品の連続処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a continuous processing apparatus, for example, a continuous processing apparatus for electronic parts.

【０００２】[0002]

【従来技術】半導体部品や、セラミックス基板にスクリ
ーン印刷によって形成された回路パターンを焼成してな
る厚膜集積回路、或いは配向膜や偏向膜が形成された液
晶表示装置用ガラス基板等の電子部品の熱処理にあって
は、塵埃の付着によって電子部品の品質が甚だしく劣化
するので、清浄な雰囲気の中で処理されることは最も重
要な要件である。2. Description of the Related Art Semiconductor parts, thick film integrated circuits formed by firing a circuit pattern formed by screen printing on a ceramics substrate, or electronic parts such as glass substrates for liquid crystal display devices on which an alignment film or a deflection film is formed. In the heat treatment, the quality of electronic components is significantly deteriorated due to the adhesion of dust, so that treatment in a clean atmosphere is the most important requirement.

【０００３】この雰囲気のクリーン度は一般的には10ク
ラス以上、即ち、１立方フィート中に粒径0.5 μｍの微
粒子を10個以下に保つことが必要であり、このための様
々な方策が採られている。The cleanliness of this atmosphere is generally 10 class or more, that is, it is necessary to keep 10 particles or less having a particle size of 0.5 μm in 1 cubic foot, and various measures for this are adopted. Has been.

【０００４】また、被処理物が表面の酸化や窒化等によ
ってその品質が劣化するものである場合は、真空又は不
活性ガスの雰囲気中で熱処理が行われることもある。Further, when the quality of the object to be processed is deteriorated due to surface oxidization or nitriding, heat treatment may be carried out in a vacuum or an atmosphere of an inert gas.

【０００５】したがって、塵埃の発生し易い熱風加熱に
よる初期の生産方式から清浄度の高い赤外線加熱方式が
採られるようになり、更に塵埃源を排除する様々な試み
がなされている。Therefore, an infrared heating method with high cleanliness has been adopted from the initial production method by heating with hot air, which easily generates dust, and various attempts have been made to eliminate the dust source.

【０００６】熱処理の方法としては、専用の容器に数十
枚の基板を装入して熱処理炉に入れて行うカセット方式
や、チェーン又はベルトコンベヤ等の搬送装置を用いて
熱処理炉の中を通過させて行う連続方式や、ホットプレ
ートに処理物を載置して行う熱処理方式が一般的であ
る。The heat treatment method includes a cassette system in which dozens of substrates are placed in a dedicated container and placed in a heat treatment furnace, or a carrier such as a chain or belt conveyor is used to pass through the heat treatment furnace. In general, a continuous method of performing the treatment and a heat treatment method of placing a processed material on a hot plate are generally used.

【０００７】然し、処理能力においては優れた性能を有
するもののコンベヤ方式の長い炉体に要する多大な設置
面積や、カセットや炉内へのセッティングに手間どるバ
ッチ方式は、必然的に低生産性と不均一な加熱や塵埃飛
散による不良品の発生を伴う等の難点を容している。However, although the processing capacity is excellent, the large installation area required for a long conveyor type furnace body and the batch method which is troublesome for setting in a cassette or a furnace necessarily result in low productivity. It has problems such as non-uniform heating and generation of defective products due to dust scattering.

【０００８】したがって、このような難点を補うため
に、コンベヤ等を利用する連続処理方式の優れた処理能
力を活かしながら、炉体上部空間を有効利用すべく、炉
体及び搬送機構を上方へ迂回路を形成して、炉全長の短
縮化を図る方法が採られるようになっている。[0008] Therefore, in order to make up for such difficulties, the furnace body and the transfer mechanism are detoured upward in order to effectively utilize the upper space of the furnace body while making use of the excellent processing capacity of the continuous processing system using a conveyor or the like. A method has been adopted in which a passage is formed to shorten the total length of the furnace.

【０００９】図９は、前記迂回方式連続処理炉の要部の
概略縦断面図である。即ち、搬送機構の横送り部30ａか
ら30ｅの間に上昇、水平移動及び下降からなる迂回路を
形成し、上昇部30ｂから上部における中継の横送り部30
ｃを経由して、下降部30ｄを通り所要の熱処理を行うよ
うになっている。FIG. 9 is a schematic vertical sectional view of the main part of the bypass type continuous processing furnace. That is, a detour consisting of ascending, horizontal moving, and descending is formed between the lateral feed portions 30a to 30e of the transport mechanism, and the relay lateral feed portion 30 at the upper portion from the ascending portion 30b.
A required heat treatment is performed through the descending portion 30d via c.

【００１０】下部における横送りはウォーキングビーム
方式等の塵埃の発生しない方式が採られているが、その
他の部分の搬送機構についてはその方法は一様ではな
い。上昇及び下降の方法としては、例えば搬入されてく
る被処理物Ｗを個々に支える多段の支持材を設けたもの
があり、図10がそれである。Although a method such as a walking beam method that does not generate dust is adopted for the lateral feed in the lower portion, the method is not uniform for the transport mechanism in other portions. As a method of raising and lowering, for example, there is a method of providing a multi-stage support member for individually supporting the workpieces W to be carried in, and FIG. 10 shows it.

【００１１】図10は、前記迂回路において、多段の支持
材を備えた上昇部30ｂ並びに下降部30ｄの搬送機構の概
要図であり、図11はその要部の平面図である。上昇部30
ｂの内部には、等間隔同一レベルの位置に複数の支持材
33を配した複数の上送り軸32Ａと上昇中継軸31Ｂの２組
の支軸群が設けられている。そして、上送り軸32Ａは連
動して上下動及び回転し、上昇中継軸31Ａは単独に連動
して回転のみをする構造になっている。FIG. 10 is a schematic view of the transport mechanism for the ascending section 30b and the descending section 30d provided with multi-stage support members in the bypass, and FIG. 11 is a plan view of the essential parts thereof. Ascending section 30
Inside b, a plurality of support members are placed at the same level at equal intervals.
Two sets of spindle groups, that is, a plurality of upper feed shafts 32A on which 33 are arranged and a rising relay shaft 31B are provided. Then, the upper feed shaft 32A is interlocked to move up and down and rotate, and the ascending relay shaft 31A independently interlocks to rotate only.

【００１２】図示の如く、横送り部30ａから上昇部30ｂ
の中まで搬送された被処理物Ｗは、上送り軸32Ａの支持
材33に移し替えられる。移し替えられた被処理物Ｗは上
送り軸32Ａによって押上げられ、上昇中継軸31Ａに移し
替えられ、上送り軸32Ａは下降して次の被処理物を押上
げる。同時に、上送り軸32Ａに配されている上段の支持
材33は、先に押上げ上昇中継軸31Ａの支持材33に中継さ
れている被処理物Ｗを支持して順次、次の段へ押上げ
る。このような動作の反復によって被処理物Ｗは上昇部
30ｂの中を搬送される。As shown in the figure, from the lateral feed portion 30a to the rising portion 30b.
The workpiece W conveyed to the inside is transferred to the support member 33 of the upper feed shaft 32A. The transferred workpiece W is pushed up by the upper feed shaft 32A and transferred to the ascending relay shaft 31A, and the upper feed shaft 32A descends to push up the next workpiece. At the same time, the upper-stage support member 33 arranged on the upper feed shaft 32A supports the workpiece W previously relayed to the support member 33 of the lift-up relay shaft 31A and sequentially pushes it to the next stage. increase. By repeating such an operation, the object W to be processed is lifted up.
It is transported in 30b.

【００１３】上送り軸32Ａ及び上昇中継軸31Ａの夫々の
支持材33は被処理物Ｗの受渡し時以外は交互に回軸して
被処理物Ｗの通過を妨げることはない。即ち、上送り軸
32Ａの支持材33が被処理物Ｗを支持して作動している時
は、上昇中継軸31Ａは回転して同軸の支持材33の向きを
変え、更に回転して被処理物Ｗの受渡しを行えば、次は
上送り軸32Ａが回転して同軸の支持材33の向きを変えて
上下動する。The support members 33 of the upper feed shaft 32A and the lifting relay shaft 31A do not rotate around the objects W to be processed except when the objects W to be processed are delivered. That is, the upper feed axis
When the support member 33 of 32A is operating while supporting the workpiece W, the ascending relay shaft 31A rotates to change the direction of the coaxial support member 33, and further rotates to transfer the workpiece W. If done, next, the upper feed shaft 32A rotates to change the direction of the coaxial support member 33 and move up and down.

【００１４】上昇部30ｂにおいて、最上端まで搬送され
た被処理物Ｗは、下降部30ｄ側へ横送り（機構図示省
略）される。In the ascending section 30b, the workpiece W conveyed to the uppermost end is laterally fed to the descending section 30d (mechanism not shown).

【００１５】下降部30ｄの内部にも上昇部30ｂと全く同
じ機構が逆向きに設けられている。そしてこれは同じ機
能を備え、只、上昇側とは反対の作用をしている。上昇
側の上送り軸32Ａが被処理物Ｗを順次押上げる作用に対
して、下降側の下送り軸32Ｂは同軸の支持材33により、
下降中継軸31Ｂの支持材33から被処理物Ｗを順次下方へ
移し替える役目をするものである。Inside the descending portion 30d, the same mechanism as that of the ascending portion 30b is provided in the opposite direction. And it has the same function, but it works in the opposite direction to the rising side. While the upward feed shaft 32A sequentially pushes up the workpiece W, the downward feed shaft 32B is supported by the coaxial support member 33.
It serves to sequentially transfer the workpiece W downward from the support material 33 of the descending relay shaft 31B.

【００１６】このように、装置の設置面積の節約と効率
化策として、迂回路を形成して上方空間の活用化のため
には、全体の機構の複雑化を伴う傾向がある。而も上部
の横送り機構は発塵源となって清浄な雰囲気を汚染する
結果を生み、又、該部の横送り機構の駆動源を炉外に設
けなければならないため、この駆動源との連結材用の貫
通溝を炉壁に設けねばならず、これに伴う熱の逃げを余
儀なくされる。このため炉内温度の均一性を欠き、被処
理物の品質の低下を招く結果ともなっている。したがっ
て、構造の簡素化等の改善は今後の課題でもある。As described above, as a measure for saving the installation area of the apparatus and increasing the efficiency, in order to utilize the upper space by forming a detour, the entire mechanism tends to be complicated. Moreover, the horizontal feed mechanism in the upper part becomes a source of dust and results in contaminating the clean atmosphere, and the drive source of the horizontal feed mechanism of the part must be provided outside the furnace. Through-grooves for the connecting material must be provided in the furnace wall, which causes the heat to escape. For this reason, the temperature in the furnace is not uniform, and the quality of the object to be processed is deteriorated. Therefore, improvement of the simplification of the structure is a future issue.

【００１７】[0017]

【発明の目的】本発明は、清浄な雰囲気を必要とする連
続処理装置において、発塵源を無くし、機構の簡素化と
効率的な連続処理装置を提供することを目的としてい
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide a continuous processing apparatus which requires a clean atmosphere, eliminates a dust source, simplifies the mechanism and is efficient.

【００１８】[0018]

【発明の構成】本発明は、処理手段（例えば後述の発熱
素子16）を具備する仕切り壁（例えば後述の仕切り壁
４）によって複数の処理室が互に重なるように設けられ
た第一及び第二の処理室群（例えは後述の第１炉１−１
及び第２炉１−２）と、前記の各処理室内で被処理物を
載置する載置部材（例えば後述の支持材５）と、前記第
一及び第二の処理室群を互に位置交換可能にかつ上下動
可能に取付けた回転軸（例えば後述の支持軸６）と、前
記第一及び第二の処理室群の同じ高さ（例えば後述の装
入口レベル10及び搬出口レベル11）に位置する１対の処
理室のうちの一方の処理室に未処理の被処理物を搬入す
る被処理物搬入手段（例えば後述の搬入用ローラ19）
と、前記第一及び第二の処理室群の同じ高さに位置する
１対の処理室のうちの他方の処理室から処理済みの被処
理物を搬出する被処理物搬出手段（例えば後述の搬出用
ローラ20）とを有し、前記被処理物搬入手段によって未
処理の被処理物が前記第一又は第二の処理室群の各処理
室に順次搬入され、前記被処理物搬出手段によって処理
済みの被処理物が前記第二又は第一の処理室群の各処理
室から順次搬出されるように構成された連続処理装置に
係る。According to the present invention, a plurality of processing chambers are provided so as to overlap each other by a partition wall (for example, a partition wall 4 described later) provided with a processing means (for example, a heating element 16 described later). Second processing chamber group (for example, the first furnace 1-1 described later)
And a second furnace 1-2), a mounting member (for example, a support member 5 to be described later) for mounting an object to be processed in each of the processing chambers, and the first and second processing chamber groups are positioned relative to each other. A rotating shaft (for example, a supporting shaft 6 described later) that is replaceably and vertically movable and the same height of the first and second processing chamber groups (for example, a loading level 10 and a loading level 11 described below). Object carrying-in means for carrying in an unprocessed object to one of the pair of processing chambers located at the position (for example, a loading roller 19 described later).
And a processing object unloading means (for example, which will be described later) that carries out the processed object from the other processing chamber of the pair of processing chambers located at the same height of the first and second processing chamber groups. And a carry-out roller 20), and the untreated object is successively carried into each processing chamber of the first or second processing chamber group by the object carrying-in means, and is carried out by the object carrying-out means. The present invention relates to a continuous processing apparatus configured to sequentially carry out processed objects from the respective processing chambers of the second or first processing chamber group.

【００１９】[0019]

【実施例】以下、本発明の実施例を説明する。図１は図
２におけるＩ−Ｉ線断面図、図２は図１におけるII−II
線断面図である。先ず図２により明らかなように、炉体
２の内部は複数の仕切り壁４が床状に配設されて、多層
の処理室が形成されている。そして炉体２は工程の進行
方向に沿って、第一の領域に第１炉１−１が、第二の領
域に第２炉１−２が支軸６を挟み対称に設置されてい
る。この点を図１が明瞭に示している。EXAMPLES Examples of the present invention will be described below. 1 is a sectional view taken along line I-I in FIG. 2, and FIG. 2 is II-II in FIG.
It is a line sectional view. First, as is clear from FIG. 2, a plurality of partition walls 4 are arranged in a floor shape inside the furnace body 2 to form a multi-layer processing chamber. In the furnace body 2, the first furnace 1-1 and the second furnace 1-2 are installed symmetrically with the support shaft 6 in between in the first region and the second region along the traveling direction of the process. This point is clearly shown in FIG.

【００２０】したがって、本例は２個の炉１−１，１−
２が支軸６を中心に背中合せに支軸６に固定されてお
り、各処理室の遠心側には開口部３が設けられている。
そして、各処理室の中には板状被処理物Ｗ用の支持材５
が設置されている。床状の仕切り壁４は後述する面状ヒ
ータが内蔵されており、これにより各処理室内の支持材
５に載置される被処理物Ｗが加熱処理される。なお、仕
切り壁４と同部材は本体２内の天井及び床面にも設けら
れている。Therefore, in this example, two furnaces 1-1, 1-
2 are fixed to the support shaft 6 back to back around the support shaft 6, and an opening 3 is provided on the centrifugal side of each processing chamber.
Then, in each processing chamber, there is a support member 5 for the plate-shaped object W to be processed.
Is installed. The floor-shaped partition wall 4 has a planar heater, which will be described later, built therein, and by this, the workpiece W placed on the support material 5 in each processing chamber is heat-treated. The same members as the partition wall 4 are also provided on the ceiling and floor of the main body 2.

【００２１】支軸６は図示しない駆動源によって時計方
向へ180 度づつの回転と上下動の機能を備えている。し
たがって、支軸６に固定されている第１炉１−１及び第
２炉１−２も共に回転及び上下動する。そして、装置１
の第一の領域側（搬入口12側）には、床７の一端から立
上る円弧状の側壁８が中央部まで設けられ、反対側の第
二の領域（搬出口13側）にも円弧状の側壁９が逆に上半
分に設けられている。したがって、支軸６の上下動に伴
い各処理室は常に一部又は全部がその開口３を遮蔽され
ることになる。The support shaft 6 has a function of rotating by 180 degrees in a clockwise direction and a vertical movement by a drive source (not shown). Therefore, the first furnace 1-1 and the second furnace 1-2 fixed to the support shaft 6 also rotate and move up and down. And the device 1
On the first region side (carrying-in port 12 side), an arcuate side wall 8 rising from one end of the floor 7 is provided up to the central portion, and on the other side of the second region (carrying-out port 13 side) as well. On the contrary, the arc-shaped side wall 9 is provided in the upper half. Therefore, with the vertical movement of the support shaft 6, each processing chamber is always partially or wholly shielded from the opening 3.

【００２２】装置１への被処理物Ｗの搬入及び搬出は個
々の処理室ごとに、そして第１炉１−１及び第２炉１−
２の双方が同時に行われる。即ち、搬入は第一の領域の
搬入口12から搬入用ローラ19により、搬出は第二の領域
の搬出口13から搬出用ローラ20により、夫々図示しない
搬出入機構によって行われる。Loading and unloading of the object to be processed W into the apparatus 1 is carried out for each processing chamber, and the first furnace 1-1 and the second furnace 1-
Both of the two are done simultaneously. That is, the carry-in is carried out by the carry-in roller 19 from the carry-in entrance 12 of the first area, and the carry-out is carried out by the carry-out roller 20 from the carry-out exit 13 of the second area by an carry-in / carry-out mechanism (not shown).

【００２３】この工程は、先ず支軸６の作動による第１
炉１−１及び第２炉１−２の上限位置（図２の仮想線）
から始まる。前記上限位置状態で最下位の処理室の開口
３が搬入口12と位置を同じくする。被処理物Ｗを搬入す
れば支軸６は処理室間隔で一段づつ下降しながら、順次
被処理物Ｗを処理室に搬入し終えた時点で前記両炉は下
限位置に達する。In this step, first, the first operation by the operation of the support shaft 6 is performed.
Upper limit position of furnace 1-1 and second furnace 1-2 (phantom line in FIG. 2)
start from. In the upper limit position, the opening 3 of the lowest processing chamber is located at the same position as the carry-in port 12. When the workpiece W is loaded, the support shaft 6 descends step by step at intervals of the processing chambers, and when the workpieces W are sequentially loaded into the processing chambers, both furnaces reach the lower limit position.

【００２４】このように、最下位の処理室から逐次被処
理物Ｗが搬入されて一段づつ下降することに伴い、第一
の領域の前記側壁８によって順次各処理室の開口３は遮
蔽される。したがって、側壁８が被処理物Ｗの搬入と同
時に開始されている熱処理に伴う処理室内の温度の逃げ
を防止している。In this way, as the workpiece W is successively carried in from the lowest processing chamber and is lowered step by step, the side walls 8 in the first region sequentially shield the openings 3 of the respective processing chambers. .. Therefore, the side wall 8 prevents the escape of the temperature in the processing chamber due to the heat treatment which is started at the same time when the workpiece W is loaded.

【００２５】第一の領域において被処理物Ｗを搬入し終
れば、再び支軸６は両炉を180 度回転させながら上限位
置まで移動させる。この回転により、各処理室に被処理
物Ｗを載置した第一炉１−１は第二の領域へ変位するこ
とになる。そして、反対に第２炉１−２が第一の領域に
おいて上限に位置する。When the object W to be treated has been loaded in the first region, the spindle 6 moves the furnaces to the upper limit position while rotating both furnaces by 180 degrees. Due to this rotation, the first furnace 1-1 having the processing object W placed in each processing chamber is displaced to the second region. On the contrary, the second furnace 1-2 is located at the upper limit in the first region.

【００２６】各処理室が空の第２炉１−２は、第一の領
域において被処理物Ｗの処理室への搬入が始まる。一
方、第二の領域に在る第１炉１−１は被処理物の搬出が
開始される。In the second furnace 1-2 in which each processing chamber is empty, loading of the object W to be processed into the processing chamber starts in the first region. On the other hand, the first furnace 1-1 in the second area starts to carry out the object to be treated.

【００２７】このような被処理物の工程における流れを
段階的な装置の変化と共に示したのが図３である。図３
（ａ）〜（ｆ）は装置１要部の概略図である。同図にお
いては第一の領域、は第二の領域を示している。FIG. 3 shows the flow in the process of the object to be treated together with the stepwise change of the apparatus. Figure 3
(A)-(f) is the schematic of the principal part of the apparatus 1. In the figure, a first area and a second area are shown.

【００２８】先ず（ａ）図は、装置１内において支軸６
が上限に位置し、第一の領域においては第１炉１−１最
下部の処理室が搬入口レベル10に位置して、被処理物Ｗ
が支持材５に載置された状態を示している。（ｂ）図は
支軸６が一段下降して次の処理室へ被処理物Ｗが搬入さ
れた状態、このような動作の繰返しによって支軸６が下
限に達したとき、（ｃ）図に示すように第一炉は全処理
室に被処理物Ｗの搬入が終る。次には支軸６の上昇機構
及び回軸機構が同時に作動して、支軸６が両炉１−１，
１−２を時計方向へ回転させながら上昇する。（ｄ）図
はこの動作の途中の経過を示し、（ｅ）図はこれが上限
に達し、第１炉１−１が被処理物Ｗを搬入したまま第二
の領域に横移動した状態を示している。そして、これと
同時に第二の領域に在った空の第２炉１−２が第一の領
域側へ移転する。（ｆ）図は、今度は第２炉１−２の処
理室へ被処理物Ｗの搬入開始の状態を示し、同時に第二
の領域側においては、第１炉１−１の処理室からの被処
理物Ｗの搬出開始の状態を示している。First, FIG. 1A shows the support shaft 6 in the apparatus 1.
Is located at the upper limit, and in the first region, the processing chamber at the bottom of the first furnace 1-1 is located at the carry-in level 10, and the workpiece W
Shows the state of being mounted on the support member 5. (B) is a state in which the support shaft 6 is lowered by one step and the workpiece W is carried into the next processing chamber, and when the support shaft 6 reaches the lower limit by repeating such an operation, As shown in the first furnace, the loading of the workpiece W into all the processing chambers is completed. Next, the lifting mechanism of the support shaft 6 and the rotating shaft mechanism are simultaneously actuated, so that the support shaft 6 moves to both the furnaces 1-1 and 1.
Ascend while rotating 1-2 clockwise. (D) figure shows the progress in the middle of this operation, (e) figure shows the state where this reached the upper limit, and the first furnace 1-1 laterally moved to the second region while carrying in the workpiece W. ing. At the same time, the empty second furnace 1-2 existing in the second area is moved to the first area side. The figure (f) shows the state of starting the loading of the object to be processed W into the processing chamber of the second furnace 1-2 this time, and at the same time, on the second region side, from the processing chamber of the first furnace 1-1. It shows a state in which unloading of the object to be processed W is started.

【００２９】このような動作の繰返しにより、被処理物
Ｗは工程間の第一の領域から第二の領域へと横送りされ
る。そして、第一の領域における処理室への搬入と同時
に加熱処理が始まり、第二の領域において搬出されるま
での所要時間に熱処理が完了するようになっている。By repeating such operations, the workpiece W is laterally fed from the first region to the second region between the steps. Then, the heat treatment is started at the same time when the heat treatment is carried into the processing chamber in the first region, and the heat treatment is completed in a time required until the heat treatment is carried out in the second region.

【００３０】炉体１−１，１−２内の仕切り壁４間の間
隔及仕切りに伴う処理室層の数等によって熱処理時間も
変り、装置の寸法も変る。例えば仕切り壁４を50mm間隔
で配置した６層の処理室の場合で、装置の高さは500 mm
で熱処理時間は３分、同条件で12層の場合、装置の高さ
は1000mmで熱処理時間は６分である。これら所要時間は
１枚毎の被処理物の搬出入等の所要時間が30秒で、上下
動及び回転時間も含む結果である。装置の全長は約1.3
ｍであり、コンベヤ式等の従来炉が全長4.5 ｍ〜6.5 ｍ
に対して、装置の占用面積が大幅に節約できることにな
る。The heat treatment time and the size of the apparatus vary depending on the distance between the partition walls 4 in the furnace bodies 1-1 and 1-2 and the number of processing chamber layers associated with the partitions. For example, in the case of a 6-layer processing chamber with partition walls 4 arranged at 50 mm intervals, the height of the device is 500 mm.
The heat treatment time is 3 minutes, and in the case of 12 layers under the same conditions, the height of the apparatus is 1000 mm and the heat treatment time is 6 minutes. These required times are 30 seconds required for loading and unloading of each processed object, and are the results including vertical movement and rotation times. The total length of the device is about 1.3
The conventional furnace, such as a conveyor type, has a total length of 4.5 m to 6.5 m.
On the other hand, the occupied area of the device can be greatly saved.

【００３１】被処理物の加熱処理時間はその種類，材質
等によって異なる。したがって、それに応じた処理室層
の装置を選べばよい。又、多層の場合は全段を使用せ
ず、熱処理時間に合せて使用する処理室の数を限定する
こともできる。The heat treatment time of the object to be treated differs depending on its type, material and the like. Therefore, a device for the processing chamber layer may be selected accordingly. Further, in the case of a multi-layer, it is possible to limit the number of processing chambers to be used according to the heat treatment time without using all the stages.

【００３２】図４及び図５は炉１−１の部分拡大断面図
であり、図４は図５におけるＩＶ−ＩＶ断面図で、図５
は図４におけるＶ−Ｖ断面図である。図示の通り、炉体
２は外枠２ａ及び内枠２ｂで形成され断熱材12を内蔵し
ている。仕切り壁４は炉体２の内部に縦列の等間隔で配
され、支持部材４ａに載置され、図示しない通電機構を
備えている。4 and 5 are partially enlarged sectional views of the furnace 1-1, and FIG. 4 is a sectional view taken along the line IV-IV in FIG.
FIG. 5 is a sectional view taken along line VV in FIG. 4. As shown in the figure, the furnace body 2 is formed of an outer frame 2a and an inner frame 2b and contains a heat insulating material 12. The partition walls 4 are arranged inside the furnace body 2 at equal intervals in columns, are placed on the support member 4a, and are provided with an energization mechanism (not shown).

【００３３】仕切り壁４は図６に一部を拡大して示すよ
うに積層構造になっている。前記通電機構に接続された
発熱素子16は耐熱絶縁布17に包み込まれて中央に位置
し、アルミニウム又はステンレス鋼の薄板15，15に挟ま
れて仕切り壁４が構成されて、厚さｔは７mmである。発
熱素子16は、鉄−クロム合金やニッケルめっきを施した
純鉄等の箔から成り、狭い間隙を隔て蛇行する厚さ0.03
mmの帯状を呈している。The partition wall 4 has a laminated structure as shown in a partially enlarged view in FIG. The heating element 16 connected to the energizing mechanism is wrapped in a heat-resistant insulating cloth 17 and located at the center, and is sandwiched between thin plates 15 and 15 of aluminum or stainless steel to form a partition wall 4 having a thickness t of 7 mm. Is. The heating element 16 is made of foil such as iron-chromium alloy or pure iron plated with nickel and has a thickness of 0.03 that meanders with a narrow gap.
It has a band shape of mm.

【００３４】図７は蛇行する発熱素子16を示しており、
この蛇行パターンは電解エッチング又はスクリーン印刷
によって形成される。薄板15の被処理物Ｗに対向する面
には遠赤外線放射材18がコーティングされている。FIG. 7 shows a meandering heating element 16,
This meandering pattern is formed by electrolytic etching or screen printing. The surface of the thin plate 15 facing the object W to be processed is coated with a far infrared radiation material 18.

【００３５】この装置の運転中は、仕切り壁４の発熱素
子16へは常時通電状態となっているが、使用開始前に予
め所定温度に昇温させてから使用される。発熱素子16は
通電されると、これが加熱して薄板15，15が遠赤外線を
放射し、処理室内の被処理物Ｗは両面に遠赤外線の放射
を受けて効率的に昇温する。仕切り壁４の表面には温度
センサ（例えば測温抵抗体、熱電対の温接点又はサーミ
スタ、図示せず）が配されていて、ヒータ毎に温度を検
出して温度制御を行うようにしている。While the apparatus is in operation, the heating element 16 of the partition wall 4 is always energized, but it is used after being heated to a predetermined temperature in advance before use. When the heating element 16 is energized, it is heated and the thin plates 15 and 15 radiate far infrared rays, and the object W to be processed in the processing chamber receives the far infrared rays on both sides and efficiently rises in temperature. A temperature sensor (for example, a resistance temperature detector, a hot junction of a thermocouple or a thermistor, not shown) is arranged on the surface of the partition wall 4, and the temperature is controlled for each heater to control the temperature. ..

【００３６】ヒータとしては、上記構造の面状のほかに
も他の適宜な構造のヒータが使用できる。例えば、熱放
射面に遠赤外線放射材がコーティングされた２枚の金属
板でシーズヒータ（極細タイプのマイクロヒータ、シー
ズ径１mm程度）を挟んだ構造のものが好適である。As the heater, in addition to the planar shape of the above-mentioned structure, a heater having another suitable structure can be used. For example, a structure in which a sheath heater (an ultra-fine type micro heater, a sheath diameter of about 1 mm) is sandwiched between two metal plates whose heat radiation surface is coated with a far infrared radiation material is suitable.

【００３７】以上、本発明の実施例を説明したが、本発
明の技術思想に基づいて上記実施例に種々の変形例を加
えることができる。例えば、前記例は支軸６を中心に背
中合せに二つの炉を設けたが、図８に見る如く、支軸26
を中心に扇状の４つの処理室22−１，22−２，22−３，
22−４に配分した円筒形の炉体22にすることもできる。Although the embodiments of the present invention have been described above, various modifications can be added to the above embodiments based on the technical idea of the present invention. For example, in the above example, two furnaces are provided back to back around the support shaft 6, but as shown in FIG.
With four fan-shaped processing chambers 22-1, 22-2, 22-3,
It is also possible to make a cylindrical furnace body 22 distributed to 22-4.

【００３８】同図は、前記変形例の概略横断面図であ
る。この変形例21は、筒状の炉体22の中心に上下動及び
回転機能を有する支軸26を置き、支軸26を中心に縦方向
に円形を四等分した隔壁22ａで形成されている。等分さ
れた部屋は前記実施例同様に、仕切り壁で仕切られた縦
方向に多層状の処理室22−１，22−２，22−３，22−４
を形成しており、各処理室は筒面に夫々間口を有するも
のである。The figure is a schematic cross-sectional view of the modification. In this modified example 21, a support shaft 26 having vertical movement and rotation functions is placed at the center of a cylindrical furnace body 22, and a partition wall 22a is formed by vertically dividing the support shaft 26 into four equal parts. .. The equally divided chambers are the same as in the above-mentioned embodiment, and are vertically divided into multi-layered treatment chambers 22-1, 22-2, 22-3, 22-4 which are partitioned by partition walls.
And each processing chamber has a front surface on its cylindrical surface.

【００３９】図示の如く、搬入口及び搬出口は円形の１
／２部分に設けられている。被処理物Ｗは矢印方向に搬
入口23から搬入され、炉体22内では270 度回転して搬出
口24へ横移動して搬出される。そして前記実施例と同じ
く、搬入口領域には下半分に、搬出口領域には上半分
に、残る領域は全面に炉体22を囲む遮蔽壁（25ａ，25
ｂ，25ｃ）を設けて、上下動する処理室の間口を遮蔽し
ている。As shown, the carry-in port and the carry-out port are circular 1
It is provided in the / 2 part. The workpiece W is carried in from the carry-in port 23 in the direction of the arrow, rotates 270 degrees in the furnace body 22, and laterally moves to the carry-out port 24 to be carried out. As in the above-mentioned embodiment, the shielding wall (25a, 25a) surrounding the furnace body 22 covers the entire lower half of the carry-in area, the upper half of the carry-out area, and the remaining area.
b, 25c) are provided to block the front and back of the processing chamber.

【００４０】これは長時間加熱処理を必要とする被処理
物に適している。このように左右の回転領域の有効活用
により、更に工場内面積の効率化が可能となる。This is suitable for an object to be processed which requires a long heat treatment. In this way, by effectively utilizing the left and right rotating regions, it is possible to further improve the efficiency of the factory area.

【００４１】本発明は何れも電子部品の熱処理以外に
も、例えば水洗浄後の被処理物の乾燥や、プリベーク，
ポストベークその他被処理物の低温焼成（200 ℃以下）
処理用に適している。而も消費電力が少なく従来炉の１
／５以下ですみ、クリーン度の良さに加え枚葉加熱によ
り高品質の製品化が可能であり、生産性の優れた連続処
理装置である。更に、本発明は、雰囲気処理等の熱処理
以外の連続処理装置にも適用可能である。In addition to the heat treatment of electronic parts, the present invention is also applicable to, for example, drying of an object to be treated after washing with water, prebaking,
Post-baking and other low-temperature baking of materials to be processed (200 ° C or less)
Suitable for processing. Moreover, it consumes less power and is one of the conventional furnaces.
It is less than / 5, and in addition to good cleanliness, it is a continuous processing device with excellent productivity that enables high quality products by single-wafer heating. Furthermore, the present invention can be applied to a continuous processing apparatus other than heat treatment such as atmosphere treatment.

【００４２】[0042]

【発明の効果】本発明は、複数の処理室群を上下動可能
に、かつ回転による位置交換可能にしているので、機構
の簡素化と共に上下に配置された載置機能が横送り機能
も兼ね、小スペースの中で所要の処理を可能にしてい
る。更に、処理中に横送りに伴う被処理物載置場所の変
化を伴わないため、発塵の要素がなく一層清浄な雰囲気
の保持が可能になる。According to the present invention, since a plurality of processing chamber groups can be moved up and down and their positions can be exchanged by rotation, the mechanism can be simplified and the vertically placed placement function also serves as the lateral feed function. , Enables the required processing in a small space. Furthermore, since there is no change in the location of the object to be processed that accompanies lateral feeding during processing, there is no element of dust generation and it is possible to maintain a cleaner atmosphere.

【図面の簡単な説明】[Brief description of drawings]

【図１】実施例の概略横断面図（図２のＩ−Ｉ線断面
図）である。FIG. 1 is a schematic cross-sectional view (cross-sectional view taken along line I-I of FIG. 2) of an example.

【図２】図１におけるII−II線断面図である。FIG. 2 is a sectional view taken along line II-II in FIG.

【図３】装置への被処理物の搬入搬出及び横送りの状態
を段階的に示した図である。FIG. 3 is a diagram showing, step by step, a state in which an object to be processed is carried in and out and laterally fed.

【図４】炉体の部分拡大断面図（図５のＩＶ−ＩＶ線断
面図）である。FIG. 4 is a partially enlarged cross-sectional view of the furnace body (cross-sectional view taken along the line IV-IV in FIG. 5).

【図５】図４におけるＶ−Ｖ線断面図である。5 is a sectional view taken along line VV in FIG.

【図６】仕切り壁の部分拡大断面図である。FIG. 6 is a partially enlarged sectional view of a partition wall.

【図７】仕切り壁内で蛇行設置されている発熱素子を示
す概要図である。FIG. 7 is a schematic view showing a heating element that is meanderingly installed in a partition wall.

【図８】他の実施例による装置の概略横断面図である。FIG. 8 is a schematic cross-sectional view of a device according to another embodiment.

【図９】従来装置の概要図である。FIG. 9 is a schematic diagram of a conventional device.

【図10】従来装置の上下動機構を示す概略図である。FIG. 10 is a schematic view showing a vertical movement mechanism of a conventional device.

【図11】同概略平面図である。FIG. 11 is a schematic plan view of the same.

【符号の説明】[Explanation of symbols]

１，21，30 連続処理炉 １−１ 第１炉 １−２ 第２炉 ２，22 炉体 ３ 開口 ４ 仕切り壁 ５ 支持材 ６ 支軸 ７ 床 ８，９ 側壁 10 搬入口レベル 11 搬出口レベル 12，23 搬入口 13，24 搬出口 15 薄板 16 発熱素子 17 耐熱絶縁布 18 遠赤外線放射材 19 搬入用ローラ 20 搬出用ローラ 22ａ 隔壁 22−１，22−２，22−３，22−４ 処理室 30ａ，30ｃ，30ｅ 横送り部 30ｂ 上昇部 30ｄ 下降部 31Ａ 上昇中継軸 31Ｂ 下降中継軸 32Ａ 上送り軸 32Ｂ 下送り軸 Ｗ 被処理物 1,21,30 Continuous processing furnace 1-1 First furnace 1-2 Second furnace 2,22 Furnace body 3 Opening 4 Partition wall 5 Supporting material 6 Support shaft 7 Floor 8,9 Side wall 10 Carrying level 11 Carrying level 12,23 Carry-in port 13,24 Carry-out port 15 Thin plate 16 Heating element 17 Heat-resistant insulating cloth 18 Far-infrared radiation material 19 Carry-in roller 20 Carry-out roller 22a Bulkhead 22-1, 22-2, 22-3, 22-4 Treatment Chambers 30a, 30c, 30e Horizontal feed part 30b Ascending part 30d Descent part 31A Ascending relay shaft 31B Ascending relay shaft 32A Upper feed shaft 32B Lower feed shaft W Workpiece

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】 処理手段を具備する仕切り壁によって複
数の処理室が互に重なるように設けられた第一及び第二
の処理室群と、 前記の各処理室内で被処理物を載置する載置部材と、 前記第一及び第二の処理室群を互に位置交換可能にかつ
上下動可能に取付けた回転軸と、 前記第一及び第二の処理室群の同じ高さに位置する１対
の処理室のうちの一方の処理室に未処理の被処理物を搬
入する被処理物搬入手段と、 前記第一及び第二の処理室群の同じ高さに位置する１対
の処理室のうちの他方の処理室から処理済みの被処理物
を搬出する被処理物搬出手段とを有し、前記被処理物搬
入手段によって未処理の被処理物が前記第一又は第二の
処理室群の各処理室に順次搬入され、前記被処理物搬出
手段によって処理済みの被処理物が前記第二又は第一の
処理室群の各処理室から順次搬出されるように構成され
た連続処理装置。1. A first and second processing chamber group in which a plurality of processing chambers are overlapped with each other by a partition wall having processing means, and an object to be processed is placed in each of the processing chambers. A mounting member, a rotary shaft on which the first and second processing chamber groups are attached so as to be positionally interchangeable and vertically movable, and located at the same height as the first and second processing chamber groups. An object-to-be-processed-in means for carrying in an unprocessed object to one of the pair of processing chambers, and a pair of processings located at the same height of the first and second processing chamber groups. An object to be processed carried out from the other processing chamber of the chamber, and an unprocessed object to be processed by the object carrying-in means. The object to be processed that has been sequentially loaded into each processing chamber of the chamber group and has been processed by the processing object unloading means is the second or Configured continuous processing apparatus from the processing chamber of the processing chamber groups as are sequentially unloaded.