JPH0519251B2 - - Google Patents
Info
- Publication number
- JPH0519251B2 JPH0519251B2 JP58023091A JP2309183A JPH0519251B2 JP H0519251 B2 JPH0519251 B2 JP H0519251B2 JP 58023091 A JP58023091 A JP 58023091A JP 2309183 A JP2309183 A JP 2309183A JP H0519251 B2 JPH0519251 B2 JP H0519251B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- voltage
- support rod
- insulator support
- supporter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012212 insulator Substances 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/46—Arrangements of electrodes and associated parts for generating or controlling the ray or beam, e.g. electron-optical arrangement
- H01J29/48—Electron guns
- H01J29/484—Eliminating deleterious effects due to thermal effects, electrical or magnetic fields; Preventing unwanted emission
Description
【発明の詳細な説明】
本発明は複数の電子ビームを発生するカラー陰
極線管の多電子銃電極構体の耐電圧特性を向上さ
せた電子銃電極構体に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron gun electrode assembly for a color cathode ray tube that generates a plurality of electron beams, which has improved withstand voltage characteristics.
最近のカラー陰極線管に要求される性能とし
て、特に画面輝度の向上と解像度の向上が要求さ
れている。画面輝度の向上に対しては螢光体発光
効率や、螢光面発光機構の改善が、解像度の向上
に対しては多段集束電子銃の導入が行われ、更に
螢光面電圧即ち電子銃の陽極電圧の高電圧化が行
なわれている。従がつて多段集束電子銃による高
電位差の生じる電極素子数の増加と、陽極電圧の
高電圧化により電子銃電極構体の耐電圧特性はカ
ラー陰極線管が実装される受像機回路の放電によ
る破壊防止の信頼性を高めるために非常に重要と
なつている。 Among the performances required of recent color cathode ray tubes, improvements in screen brightness and resolution are particularly required. In order to improve the screen brightness, improvements were made to the luminous efficiency of the phosphor and the phosphor surface emission mechanism, and to improve the resolution, a multi-stage focusing electron gun was introduced, and the phosphor surface voltage, that is, the electron gun The anode voltage is being increased. As a result, due to the increase in the number of electrode elements that generate high potential differences due to the multistage focused electron gun and the increase in the anode voltage, the withstand voltage characteristics of the electron gun electrode structure have been improved to prevent damage due to discharge of the receiver circuit in which the color cathode ray tube is mounted. It has become extremely important to increase the reliability of
第１図及至第３図は上記目的による従来の多段
集束型電子銃電極構体１の一例である夫々正面
図、側面図及び第１図Ａ−Ａ断面を示す。 1 to 3 show a front view, a side view, and a cross section taken along the line A-A in FIG. 1, respectively, which are examples of a conventional multi-stage focusing electron gun electrode structure 1 for the above-mentioned purpose.
電子銃電極構体１は同一平面内に互に絶縁され
て等間隔距離Ｓを保つて一列に配列された三つの
陰極構体１０と、これに対向して電子ビーム進行
方向に順次配置される電気的、構造的に共通な制
御電極であるG1電極１１、陰極より射出された
熱電子ビームの加速電極であるG2電極１２、電
気的、構造的に共通で各電子ビーム通路には実質
的に独立した電子レンズを形成する一体化電極か
らなるG3電極１３〜G6電極１６で構成されてい
る。各電極は絶縁物支持杆１９との融着強度を高
めるために複数の切欠部１８Ａを先端に設けた支
持子１８を持ち、支持子１８の切欠部１８Ａを二
本の絶縁物支持杆１９へ埋込んで融着することに
より各電極間隔が所定寸法に保持固定されてお
り、支持子１８の長さは三つのインライン配列孔
を結ぶ中心線に対して等しく、且つG1電極１１
〜G6電極１６迄その全長は全て同一寸法d0とさ
れている。G4電極１４とG6電極１６は給電線１
７Ａにより同電位となるように接続され、図示し
ないが電子銃電極構体１が封止される陰極線管硝
子外囲器漏斗状部に配設された陽極端子に接続さ
れた内部導電性被膜から20〜30KV程度の高電圧
の陽極電圧が供給され、G3電極１３とG5電極１
５は給電線１７Ｂにより同電位とされ、図示され
ないが電子銃電極構体１が支持固定されるステム
の給電ピンから陽極電圧の20〜40％程度の集束電
圧が供給され、他の電極もステムの給電ピンより
所定電圧が供給されるように互にステムの給電ピ
ンに接続される。陰極１０より放射された夫々の
三本の電子ビームはG1電極１１とG2電極１２付
近に形成されるクロス・オーバ点より発散され、
G2電極１２とG3電極１３間に形成されるプリ・
フオーカス・レンズで予備集束された後、G3電
極１３とG4電極１４，G4電極１４とG5電極１
５，G5電極１５とG6電極１６の各電極間隙に形
成される主フオーカスレンズで三段に順次集束さ
れる。この様に多段集束型電子銃電極構体１では
三個の主電子レンズで徐々に電子ビームを集束出
来て、電子レンズの解像度特性は著しく向上し、
螢光面上に高輝度である電子ビーム電流が多い場
合でも高解像度画像が得られる。 The electron gun electrode assembly 1 includes three cathode assemblies 10 which are insulated from each other and arranged in a line at equal distances S from each other in the same plane, and an electrical cathode assembly 10 which is arranged in sequence in the electron beam traveling direction in opposition to these cathode assemblies 10. , a G1 electrode 11 which is a structurally common control electrode, a G2 electrode 12 which is an acceleration electrode for the thermionic beam emitted from the cathode, and a G2 electrode 12 which is electrically and structurally common but is substantially independent for each electron beam path. It is composed of a G3 electrode 13 to a G6 electrode 16, which are integrated electrodes forming an electron lens. Each electrode has a supporter 18 having a plurality of notches 18A at its tip to increase the strength of the fusion bond with the insulator support rods 19, and the notches 18A of the supporter 18 are connected to the two insulator support rods 19. By embedding and fusing, each electrode interval is maintained and fixed at a predetermined dimension, and the length of the supporter 18 is equal to the center line connecting the three in-line array holes, and the length of the G1 electrode 11 is equal to the center line connecting the three in-line array holes.
The entire length from the G6 electrode 16 to the G6 electrode 16 is all the same dimension d 0 . G4 electrode 14 and G6 electrode 16 are the feeder line 1
7A to be at the same potential, and from the internal conductive coating connected to the anode terminal disposed in the funnel-shaped part of the cathode ray tube glass envelope in which the electron gun electrode assembly 1 is sealed (not shown). A high anode voltage of ~30KV is supplied, and G3 electrode 13 and G5 electrode 1
5 are brought to the same potential by a power supply line 17B, and although not shown, a focused voltage of about 20 to 40% of the anode voltage is supplied from the power supply pin of the stem on which the electron gun electrode structure 1 is supported and fixed, and the other electrodes are also connected to the stem. They are mutually connected to the power supply pins of the stem so that a predetermined voltage is supplied from the power supply pins. Each of the three electron beams emitted from the cathode 10 is diverged from a crossover point formed near the G1 electrode 11 and the G2 electrode 12,
The pre-conductor formed between the G2 electrode 12 and the G3 electrode 13
After pre-focusing with the focus lens, G3 electrode 13 and G4 electrode 14, G4 electrode 14 and G5 electrode 1
5. The main focus lens formed between the G5 electrode 15 and the G6 electrode 16 sequentially focuses the light in three stages. In this way, in the multi-stage focusing electron gun electrode structure 1, the electron beam can be gradually focused by the three main electron lenses, and the resolution characteristics of the electron lens are significantly improved.
High-resolution images can be obtained even when there is a large amount of high-intensity electron beam current on the fluorescent surface.
一方カラー陰極線管の動作時にはG4電極１４
とG6電極１６には高電圧の陽極電圧が、G3電極
１３とG5電極１５には陽極電圧の20〜40％の中
高電圧が印加され、その各対向電極間に大きな電
位差が生じるため電極相互間の耐電圧特性は良好
でなければならない。このためにカラー陰極線管
製造工程中、上述の高電位差が生じる電極間の耐
電圧特性を向上させる目的で、実際に使用される
陽極定格電圧の数倍に相当する高電圧−例えば60
〜70KV−を電極間に印加し、管内で放電を発生
させ、電極表面の微細な突起物を除去し、電気的
に清浄とする耐電圧処理が行なわれる。この処理
工程では電極を支持している絶縁物支持杆１９の
組成で決まる固有抵抗値、誘電率及び表面状態等
で決まる表面抵抗値に応じて陽極電位のG4電極
１４，G6電極１６から低電圧（耐電圧処理工程
中は接地電位）のG3電極１３，G5電極１５側に
微小漏洩電流ILが流れ込んで来る。この電流値が
或値以上になると陽極電位にあるG4電極１４、
G6電位１６の絶縁物支持杆１９に埋設された電
極支持子１８の先端とこれに対向する絶縁物支持
杆１９の背面１９Ａ間に絶縁破壊を生じる。特に
低電位電極（耐電圧処理工程中は接地電位）であ
るG3電極１３とG5電極１５で挟まれたG4電極１
４では絶縁破壊が生じやすく、この際漏洩電流が
流れた支持子１８の先端と、これに対向する絶縁
物支持杆１９の背面１９Ａ間の径路に沿つて絶縁
物支持杆１９に貫通クラツクが生じ、これが進行
すると絶縁物支持杆１９を破壊し、電子銃電極構
体１の破壊にまで至る。 On the other hand, when operating a color cathode ray tube, the G4 electrode 14
A high anode voltage is applied to the G3 electrode 13 and the G5 electrode 15, and a medium-high voltage of 20 to 40% of the anode voltage is applied to the G3 electrode 13 and the G5 electrode 15, and a large potential difference occurs between the opposing electrodes. must have good withstand voltage characteristics. For this reason, during the manufacturing process of color cathode ray tubes, in order to improve the withstand voltage characteristics between the electrodes where the above-mentioned high potential difference occurs, a high voltage equivalent to several times the rated voltage of the anode actually used - e.g.
~70KV- is applied between the electrodes to generate a discharge within the tube, removing minute protrusions on the electrode surface and electrically cleaning the tube. In this treatment process, a low voltage is applied from the G4 electrode 14 and the G6 electrode 16 at the anode potential depending on the specific resistance value determined by the composition of the insulator support rod 19 supporting the electrode, the surface resistance value determined by the dielectric constant and surface condition, etc. A minute leakage current I L flows into the G3 electrode 13 and G5 electrode 15 sides (which are at ground potential during the withstand voltage treatment process). When this current value exceeds a certain value, the G4 electrode 14, which is at an anode potential,
Dielectric breakdown occurs between the tip of the electrode supporter 18 embedded in the insulator support rod 19 at the G6 potential 16 and the back surface 19A of the insulator support rod 19 facing thereto. In particular, the G4 electrode 1 is sandwiched between the G3 electrode 13 and the G5 electrode 15, which are low potential electrodes (ground potential during the withstanding voltage treatment process).
4, dielectric breakdown is likely to occur, and at this time, a through crack occurs in the insulator support rod 19 along the path between the tip of the supporter 18 through which the leakage current flows and the back surface 19A of the insulator support rod 19 facing it. As this progresses, the insulator support rod 19 is destroyed, and the electron gun electrode assembly 1 is even destroyed.
従がつて耐電圧処理電圧はこの絶縁物支持杆１
９の貫通クラツクが生じない程度の電圧に制限す
る必要があり、上記電極間の耐電圧処理は不十分
で電極相互間の耐電圧特性品位は低く、通常の陰
極線管使用時に電極間に放電を生じ、この際に流
れる大電流の放電電流により陰極線管の駆動回路
や付属の周辺回路素子を破壊してしまう欠点があ
つた。 Therefore, the withstand voltage processing voltage is this insulator support rod 1
It is necessary to limit the voltage to a level that does not cause the through crack of 9.The withstand voltage treatment between the electrodes is insufficient and the quality of the withstand voltage characteristics between the electrodes is low. The drawback is that the large discharge current that flows at this time destroys the cathode ray tube drive circuit and attached peripheral circuit elements.
本発明は上述した従来の欠点に鑑みてなされた
ものであつて、主電子レンズを構成する陽極電位
より低い電圧を与えられる電極で両側から挟まれ
る高電圧である陽極電圧を与えられる電極に於
て、絶縁物支持杆に埋設される支持子の全長が前
記電極の支持子の全長より短く設定されること
で、絶縁物支持杆に対する支持子の埋入深さを浅
くし、陰極線管製造工程中の耐電圧処理電圧を絶
縁物支持杆を破壊することなく高めて耐電圧品位
を良好とすることが出来る電子銃電極構体を提供
することを目的とする。 The present invention has been made in view of the above-mentioned drawbacks of the conventional art. By setting the total length of the supporter embedded in the insulator support rod to be shorter than the total length of the supporter of the electrode, the depth of embedding the supporter in the insulator support rod is shallower, thereby improving the cathode ray tube manufacturing process. It is an object of the present invention to provide an electron gun electrode structure capable of improving the withstand voltage quality by increasing the withstand voltage processing voltage therein without destroying the insulator support rod.
以下図面に従つて本発明の実施例を詳細に説明
する。説明を簡略にするため、前出と同一のもの
には同一符号をつける。 Embodiments of the present invention will be described in detail below with reference to the drawings. In order to simplify the explanation, the same reference numerals are given to the same parts as above.
第４図は本発明の一実施例を示すインライン型
電子銃電極構体２の側面図を示す。電子銃電極構
体２は同一平面内に互に絶縁されて等間隔距離Ｓ
を保つて一列に配列された三つの陰極構体１０
と、これに対向して電子ビーム進行方向に順次配
置されるG1電極１１〜G3電極１３，G4電極２４
〜G5電極１５，G6電極１６が絶縁物支持杆１９
に各電極支持子が埋設されることで各電極間隔を
所定寸法に保持して構成されている。 FIG. 4 shows a side view of an in-line electron gun electrode structure 2 showing one embodiment of the present invention. The electron gun electrode structures 2 are insulated from each other in the same plane and spaced at equal intervals S.
Three cathode structures 10 arranged in a line while maintaining
and G1 electrode 11 to G3 electrode 13 and G4 electrode 24, which are arranged in sequence in the electron beam traveling direction opposite to this.
~G5 electrode 15, G6 electrode 16 are insulator support rods 19
By embedding each electrode supporter in the structure, the distance between each electrode is maintained at a predetermined dimension.
電子銃電極構体２はG4電極２４を除くG1電極
１１〜G6電極１６の絶縁物支持杆１９に対する
支持子１８の全長が従来と同一のd0で、G4電極
２４のそれがd0より小さいd1となつている以外は
従来の電子銃電極構体１と全く同一の構成となつ
ており、G4電極２４とG6電極１６は図示しない
給電線により同電位で高電圧の陽極電圧が、G3
電極１３とG5電極１５は給電線１７Ｂにより陽
極電圧の20〜40％程度の集束電圧が印加されてい
る。 In the electron gun electrode structure 2, the total length of the supporter 18 with respect to the insulator support rod 19 of the G1 electrode 11 to G6 electrode 16 excluding the G4 electrode 24 is d 0 , which is the same as the conventional one, and that of the G4 electrode 24 is d smaller than d 0 . 1 , the structure is completely the same as the conventional electron gun electrode structure 1, and the G4 electrode 24 and the G6 electrode 16 are connected to the same potential and high voltage anode voltage by a feeder line (not shown).
A focused voltage of about 20 to 40% of the anode voltage is applied to the electrode 13 and the G5 electrode 15 via the power supply line 17B.
G4電極２４の支持子２８は全長d1が他の電極
支持子の全長d0より小さくなつているため、その
先端と絶縁物支持杆１９の背面間距離ｂは電極の
支持子１８と絶縁物支持杆１９の背面間距離ａよ
り大きくすることができる。 Since the total length d 1 of the supporter 28 of the G4 electrode 24 is smaller than the total length d 0 of the other electrode supports, the distance b between its tip and the back surface of the insulator support rod 19 is It can be made larger than the distance a between the back faces of the support rods 19.
従がつてカラー陰極線管製造工程中の耐電圧処
理では低電位（耐電圧処理中は接地電位）にある
G3電極１３とG5電極１５に挟まれたG4電極２４
の絶縁物支持杆１９に対する絶縁破壊電圧は従来
より飛躍的に高くなるので、耐電圧処理電圧は従
来より昇圧可能となり、高電位差の生じるG6電
極１６とG5電極１５，G5電極１５とG4電極２
４，G4電極２４とG3電極１３の対向電極表面の
微細な突起物や汚れを除去し、電気的に清浄とす
る耐電圧処理はG4電極２４の支持子が埋設され
る部分の絶縁物支持杆１９の絶縁破壊電圧に制限
されることなく、充分行うことが出来る。これに
よつて前記電極相互間の耐電圧品位を著しく高め
ることが出来、陰極線管使用時に電極間に放電を
生じることはなく、放電電流による陰極線管の駆
動回路、付属の周辺回路素子を破壊することを防
止出来る。 Therefore, during the withstand voltage treatment during the color cathode ray tube manufacturing process, the voltage is at a low potential (ground potential during the withstand voltage treatment).
G4 electrode 24 sandwiched between G3 electrode 13 and G5 electrode 15
Since the dielectric breakdown voltage for the insulator support rod 19 is dramatically higher than before, the withstand voltage processing voltage can be increased more than before, and a high potential difference occurs between the G6 electrode 16 and the G5 electrode 15, and between the G5 electrode 15 and the G4 electrode 2.
4. Voltage resistance treatment to remove minute protrusions and dirt on the opposing electrode surfaces of the G4 electrode 24 and the G3 electrode 13 and to electrically clean the insulator support rod in the part where the supporter of the G4 electrode 24 is buried. This can be done satisfactorily without being limited by the dielectric breakdown voltage of 19. As a result, the withstand voltage quality between the electrodes can be significantly improved, and when the cathode ray tube is used, there will be no discharge between the electrodes, and the discharge current will not destroy the cathode ray tube drive circuit or attached peripheral circuit elements. This can be prevented.
一方多段集束型主電子レンズを備えた電子銃電
極構体２ではG4電極２４の支持子２８の全長d1
を他電極の支持子１８の全長d0より短くして、二
本の絶縁物支持杆１９に対する支持子２８の埋設
深さを他より浅くしているが、G4電極２４を挾
んで両側に位置するG5電極１５とG3電極１３は
従来と同一の支持子幅を持ち、絶縁物支持杆１９
に対する埋設深さも従来と同一で、絶縁物支持杆
１９に対して充分な支持強度を持つているため、
G4電極２４の絶縁物支持杆１９に対する支持子
２８埋設深さが浅くても、その支持強度は従来と
同様の強度に保持出来る。 On the other hand, in the electron gun electrode structure 2 equipped with a multi-stage focusing main electron lens, the total length d 1 of the supporter 28 of the G4 electrode 24 is
is shorter than the total length d 0 of the supporter 18 of the other electrode, and the depth of the supporter 28 buried in the two insulator support rods 19 is shallower than the others, but the supporter 28 is located on both sides with the G4 electrode 24 in between. The G5 electrode 15 and G3 electrode 13 have the same support width as the conventional one, and the insulator support rod 19
The depth of burial is also the same as before, and it has sufficient support strength for the insulator support rod 19, so
Even if the supporter 28 of the G4 electrode 24 is buried at a shallow depth with respect to the insulator support rod 19, its supporting strength can be maintained at the same level as the conventional one.
以上の説明では、主電子レンズとしてG3電極
〜G6電極の四電極に中高電圧と高電圧を周期的
に印加する多段集束型電子レンズのG4電極に本
発明を適用する場合について述べたが、この方式
に限定されることなく他の電位配分方式や、四段
以上の多段集束型電子レンズに本発明を適用出来
ることは云うまでもない。 In the above explanation, the present invention was applied to the G4 electrode of a multi-stage focusing electron lens in which medium-high voltage and high voltage are periodically applied to the four electrodes G3 to G6 as the main electron lens. It goes without saying that the present invention is not limited to the method and can be applied to other potential distribution methods and multistage focusing electron lenses with four or more stages.
第１図乃至第３図は従来用いられている多段集
束型電子レンズを備えた電子銃電極構体の正面
図、側面図及び正面図中図示Ａ−A′断面図、第
４図は本発明による多段集束型電子レンズを備え
た電子銃電極構体の側面図を夫々示す。
１０……陰極構体、１１……G1電極、１２…
…G2電極、１３〜１６……G3〜G6電極、２４…
…本発明の一実施例によるG4電極、１８，２８
……電極支持子、１９……絶縁物支持杆。
1 to 3 are a front view, a side view, and a sectional view taken along line A-A' in the front view of an electron gun electrode structure equipped with a conventionally used multistage focusing electron lens, and FIG. 1A and 1B respectively show side views of electron gun electrode assemblies equipped with multi-stage focusing electron lenses. 10... Cathode structure, 11... G1 electrode, 12...
...G2 electrode, 13-16...G3-G6 electrode, 24...
...G4 electrode according to an embodiment of the present invention, 18, 28
... Electrode supporter, 19 ... Insulator support rod.
Claims (1)
圧より低い電位を与えられる電極により両側から
挟まれる陽極電圧を与えられる電極に於いて、絶
縁物支持杆に埋設される支持子の先端の前記絶縁
物支持杆の背面との距離をその両側にある電極の
支持子の先端と前記絶縁物支持杆の背面との距離
より大きくしていることを特徴とする電子銃電極
構体。1. In an electrode to which an anode voltage is applied, which is sandwiched from both sides by electrodes to which a potential is lower than the anode voltage, which is a high voltage constituting the main electron lens, the insulation at the tip of a support element embedded in an insulator support rod is An electron gun electrode assembly characterized in that the distance between the back surface of the object support rod and the back surface of the insulator support rod is greater than the distance between the tips of electrode supports on both sides thereof and the back surface of the insulator support rod.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309183A JPS59148245A (en) | 1983-02-15 | 1983-02-15 | Electron gun electrode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2309183A JPS59148245A (en) | 1983-02-15 | 1983-02-15 | Electron gun electrode structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59148245A JPS59148245A (en) | 1984-08-24 |
| JPH0519251B2 true JPH0519251B2 (en) | 1993-03-16 |
Family
ID=12100753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2309183A Granted JPS59148245A (en) | 1983-02-15 | 1983-02-15 | Electron gun electrode structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59148245A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0561950U (en) * | 1992-01-24 | 1993-08-13 | 株式会社東芝 | Electron gun for color CRT |
| BE1007285A3 (en) * | 1993-07-13 | 1995-05-09 | Philips Electronics Nv | Cathode ray tube. |
| KR100625526B1 (en) | 1999-08-17 | 2006-09-20 | 엘지전자 주식회사 | Electron gun for color CRT |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5697948A (en) * | 1980-01-07 | 1981-08-07 | Nec Corp | Electron gun electrode frame for cathode-ray tube |
-
1983
- 1983-02-15 JP JP2309183A patent/JPS59148245A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5697948A (en) * | 1980-01-07 | 1981-08-07 | Nec Corp | Electron gun electrode frame for cathode-ray tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59148245A (en) | 1984-08-24 |
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