JPH0518837A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH0518837A JPH0518837A JP19886991A JP19886991A JPH0518837A JP H0518837 A JPH0518837 A JP H0518837A JP 19886991 A JP19886991 A JP 19886991A JP 19886991 A JP19886991 A JP 19886991A JP H0518837 A JPH0518837 A JP H0518837A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- semiconductor
- pressure sensor
- rear surface
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体チップと、該
半導体チップに接合されたガラス台座と、該半導体チッ
プとガラス台座との接合部に形成された真空室とを備え
た半導体圧力センサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor pressure sensor provided with a semiconductor chip, a glass pedestal joined to the semiconductor chip, and a vacuum chamber formed at the joint between the semiconductor chip and the glass pedestal. ..
【０００２】[0002]
【従来の技術】半導体圧力センサは、半導体に加わった
圧力を電気信号に変換する効果を利用して圧力を検知す
るものである。該半導体圧力センサとして、所定外圧に
応じて所定電気信号を発生するために適切な厚みのダイ
ヤフラム部を持つ半導体チップと、該半導体チップを固
定するためのガラス台座と、受圧時の半導体チップの応
力を緩和するために半導体チップの受圧部とガラス台座
との間に設けられた真空室とを備えたものが知られてい
る。2. Description of the Related Art A semiconductor pressure sensor detects pressure by utilizing the effect of converting pressure applied to a semiconductor into an electric signal. As the semiconductor pressure sensor, a semiconductor chip having a diaphragm portion having an appropriate thickness for generating a predetermined electric signal according to a predetermined external pressure, a glass pedestal for fixing the semiconductor chip, and a stress of the semiconductor chip when receiving pressure There is known a device provided with a vacuum chamber provided between the pressure receiving portion of the semiconductor chip and the glass pedestal for alleviating the above.
【０００３】この種半導体センサの従来の製造方法が図
２に示されている。図２ａにおいて、１１はその上面１
１ａに拡散処理などの工程を終了した半導体チップであ
る。まず、この半導体チップ１１の裏面１１ｂを研磨し
て図２ｂに示すように所定の厚さに調整する。次に、図
２ｃに示すように半導体チップ１１の裏面１１ｂにエッ
チング処理を施して凹部１２を形成し、薄い部分をダイ
ヤフラム部とする。次に、図２ｄに示すように半導体チ
ップ１１の裏面１１ｂにガラス台座１３を真空中で接合
する。半導体チップ１１の凹部１２は真空室となる。A conventional method of manufacturing a semiconductor sensor of this type is shown in FIG. In FIG. 2a, 11 is its upper surface 1
1a is a semiconductor chip that has undergone processes such as diffusion processing. First, the back surface 11b of the semiconductor chip 11 is polished and adjusted to a predetermined thickness as shown in FIG. 2b. Next, as shown in FIG. 2c, the back surface 11b of the semiconductor chip 11 is subjected to an etching treatment to form the recess 12, and the thin portion is used as the diaphragm portion. Next, as shown in FIG. 2d, the glass pedestal 13 is bonded to the back surface 11b of the semiconductor chip 11 in a vacuum. The recess 12 of the semiconductor chip 11 serves as a vacuum chamber.
【０００４】[0004]
【発明が解決しようとする課題】上記従来例では、半導
体チップ１１にダイヤフラム部を形成するため、半導体
チップ１１にエッチング処理を施している。しかし、こ
のように高精度品たる半導体チップにエッチング処理を
施すことは、歩留りを低下させ、製造コストをひきあげ
る問題がある。In the above-mentioned conventional example, the semiconductor chip 11 is subjected to the etching treatment in order to form the diaphragm portion on the semiconductor chip 11. However, subjecting a semiconductor chip, which is a high-precision product, to such etching has a problem that the yield is reduced and the manufacturing cost is increased.
【０００５】この発明の目的は、半導体チップのエッチ
ング工程を不要として製造コストの低減を図った半導体
圧力センサを提供することにある。An object of the present invention is to provide a semiconductor pressure sensor in which the manufacturing cost is reduced by eliminating the need for a semiconductor chip etching step.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するため
にこの発明では、半導体チップはダイヤフラムとしての
厚さまで研磨された平板状のもので、これに、凹部を有
する台座の該凹部を半導体チップの裏面に対向させて半
導体チップと台座とを真空中で接合してなる。In order to achieve the above object, according to the present invention, a semiconductor chip is a flat plate that is polished to a thickness as a diaphragm, and the recess of a base having a recess is formed in the semiconductor chip. The semiconductor chip and the pedestal are bonded in a vacuum so as to face the back surface of the.
【０００７】[0007]
【作用】この発明では、半導体チップをダイヤフラムと
しての厚さまで研磨し、該半導体チップに凹部を有する
台座を接合してなるため、半導体チップにエッチング処
理を施さずに半導体圧力センサを製造できる。According to the present invention, the semiconductor pressure sensor can be manufactured without etching the semiconductor chip because the semiconductor chip is ground to the thickness of the diaphragm and the pedestal having the recess is joined to the semiconductor chip.
【０００８】[0008]
【実施例】以下に、この発明の一実施例を図１を参照し
て説明する。図１はこの実施例に係る半導体圧力センサ
の製造工程を示している。図１ａにおいて、１は、拡散
処理工程および保護膜形成などの表面処理工程を終了し
た半導体チップである。この半導体チップ１は、例えば
低濃度ｎ型シリコン基板の上面１ａに高濃度ボロンを拡
散してなる。これは、圧力により抵抗が変化するピエゾ
抵抗効果を利用し圧力を電気信号に変換する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. FIG. 1 shows a manufacturing process of a semiconductor pressure sensor according to this embodiment. In FIG. 1a, reference numeral 1 denotes a semiconductor chip which has completed a diffusion treatment step and a surface treatment step such as formation of a protective film. The semiconductor chip 1 is formed by diffusing high-concentration boron on the upper surface 1a of a low-concentration n-type silicon substrate, for example. This converts pressure into an electric signal by utilizing the piezoresistive effect in which the resistance changes with pressure.
【０００９】該半導体チップ１の裏面１ｂのシリコンを
研磨して、図１ｂに示すような平板状のダイヤフラムの
厚さにまでに形成する。ここでダイヤフラムの厚さと
は、所定外圧に応じて所定起電力を発生する受圧部とし
ての所定厚さをいう。Silicon on the back surface 1b of the semiconductor chip 1 is polished to form a flat diaphragm as shown in FIG. 1b. Here, the thickness of the diaphragm means a predetermined thickness as a pressure receiving portion that generates a predetermined electromotive force according to a predetermined external pressure.
【００１０】図１ｃにおいて、２は絶縁体のガラスから
なるガラス台座である。このガラス台座２の上面には、
エッチングその他適宜の方法により凹部３が形成されて
いる。ここでガラス台座２にエッチング処理を施したと
しても、高精度の半導体チップにエッチング処理を施す
ことに比較して容易である。そして、該ガラス台座２の
凹部３と半導体チップ１の裏面１ｂとを互いに対向させ
てガラス台座２と半導体チップ１とを真空中にて陽極接
合などにより接合する。この時、ガラス台座２の凹部３
が半導体チップ１の裏面１ｂにより封止されて真空室と
なる。この真空室は、受圧時の半導体チップ１の応力を
緩和するものである。これにより図１ｃに示すような半
導体圧力センサを得ることができる。この半導体圧力セ
ンサの半導体チップ１が圧力を受けると電気信号を発生
して圧力を検知する。この時、半導体チップ１に生じた
応力を真空室が緩和する。In FIG. 1c, 2 is a glass pedestal made of insulating glass. On the upper surface of this glass pedestal 2,
The recess 3 is formed by etching or another appropriate method. Even if the glass pedestal 2 is etched here, it is easier than etching the high-precision semiconductor chip. Then, the recess 3 of the glass pedestal 2 and the back surface 1b of the semiconductor chip 1 are made to face each other, and the glass pedestal 2 and the semiconductor chip 1 are bonded by anodic bonding or the like in vacuum. At this time, the concave portion 3 of the glass pedestal 2
Is sealed by the back surface 1b of the semiconductor chip 1 to form a vacuum chamber. This vacuum chamber relaxes the stress of the semiconductor chip 1 when receiving pressure. Thereby, a semiconductor pressure sensor as shown in FIG. 1c can be obtained. When the semiconductor chip 1 of this semiconductor pressure sensor receives a pressure, an electric signal is generated to detect the pressure. At this time, the vacuum chamber relieves the stress generated in the semiconductor chip 1.
【００１１】上記実施例によると、半導体チップ１をダ
イヤフラムとしての厚さまで研磨し、該半導体チップ１
に凹部３を有するガラス台座２を接合させて半導体圧力
センサを得ているため、高精度の半導体チップをエッチ
ングしなくてすみ、歩留りを向上でき、半導体圧力セン
サの製造コストを低減できる。また、従来のように半導
体チップに凹部を形成すると、半導体チップに応力集中
を招きやすい箇所を生じるが、この例では半導体チップ
１の厚みが均一であるから、応力集中しにくく、したが
って破損しにくい。According to the above-mentioned embodiment, the semiconductor chip 1 is polished to a thickness as a diaphragm, and the semiconductor chip 1 is polished.
Since the semiconductor pressure sensor is obtained by joining the glass pedestal 2 having the recess 3 to the semiconductor pedestal, it is not necessary to etch a high-precision semiconductor chip, the yield can be improved, and the manufacturing cost of the semiconductor pressure sensor can be reduced. Further, when the concave portion is formed in the semiconductor chip as in the conventional case, a portion where stress concentration is likely to occur is generated in the semiconductor chip, but in this example, since the thickness of the semiconductor chip 1 is uniform, it is difficult to concentrate the stress and thus is not easily damaged. ..
【００１２】[0012]
【発明の効果】上記説明したこの発明によると、裏面を
ダイヤフラムとしての厚さまで研磨された半導体チップ
と、凹部が形成され該凹部を前記半導体チップの裏面に
対向させて真空中で前記半導体チップに接合された台座
とからなるため、高精度の半導体チップをエッチング処
理する必要がなく、製造コストを低減することができ
る。According to the present invention described above, a semiconductor chip whose back surface is polished to a thickness as a diaphragm and a recessed portion are formed so that the recessed surface faces the back surface of the semiconductor chip and the semiconductor chip is formed in vacuum. Since the pedestal is joined, it is not necessary to etch the semiconductor chip with high precision, and the manufacturing cost can be reduced.
【図１】この発明の一実施例に係る半導体圧力センサの
製造工程図である。FIG. 1 is a manufacturing process diagram of a semiconductor pressure sensor according to an embodiment of the present invention.
【図２】従来例の製造工程図である。FIG. 2 is a manufacturing process diagram of a conventional example.
１ 半導体チップ １ｂ 裏面 ２ ガラス台座 1 semiconductor chip 1b back surface 2 glass pedestal
Claims (1)
厚さに形成された平板状の半導体チップと、表面に凹部
が形成され、該凹部を前記半導体チップの裏面に対向さ
せて表面が真空中で前記半導体チップに接合された台座
とからなることを特徴とする半導体圧力センサ。Claim: What is claimed is: 1. A flat semiconductor chip having a back surface polished to have a thickness as a diaphragm, and a concave portion formed on the front surface, the concave portion facing the back surface of the semiconductor chip. And a pedestal whose surface is bonded to the semiconductor chip in vacuum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19886991A JPH0518837A (en) | 1991-07-12 | 1991-07-12 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19886991A JPH0518837A (en) | 1991-07-12 | 1991-07-12 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0518837A true JPH0518837A (en) | 1993-01-26 |
Family
ID=16398281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19886991A Pending JPH0518837A (en) | 1991-07-12 | 1991-07-12 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0518837A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000506261A (en) * | 1996-02-27 | 2000-05-23 | ニフォテク・アーエス | Pressure sensor |
| US6388279B1 (en) | 1997-06-11 | 2002-05-14 | Denso Corporation | Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof |
| US11881169B2 (en) | 2021-10-20 | 2024-01-23 | Samsung Display Co., Ltd. | Pixel capable of adjusting a threshold voltage of a driving transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109371A (en) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | Pressure sensitive transistor |
| JPH0368175A (en) * | 1989-08-05 | 1991-03-25 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
-
1991
- 1991-07-12 JP JP19886991A patent/JPH0518837A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62109371A (en) * | 1985-11-07 | 1987-05-20 | Fuji Electric Co Ltd | Pressure sensitive transistor |
| JPH0368175A (en) * | 1989-08-05 | 1991-03-25 | Mitsubishi Electric Corp | Semiconductor pressure sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000506261A (en) * | 1996-02-27 | 2000-05-23 | ニフォテク・アーエス | Pressure sensor |
| US6388279B1 (en) | 1997-06-11 | 2002-05-14 | Denso Corporation | Semiconductor substrate manufacturing method, semiconductor pressure sensor and manufacturing method thereof |
| US11881169B2 (en) | 2021-10-20 | 2024-01-23 | Samsung Display Co., Ltd. | Pixel capable of adjusting a threshold voltage of a driving transistor |
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