JPH05186898A - Plating method and plating apparatus - Google Patents
Plating method and plating apparatusInfo
- Publication number
- JPH05186898A JPH05186898A JP184692A JP184692A JPH05186898A JP H05186898 A JPH05186898 A JP H05186898A JP 184692 A JP184692 A JP 184692A JP 184692 A JP184692 A JP 184692A JP H05186898 A JPH05186898 A JP H05186898A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- light
- thickness
- gold
- monitoring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はメッキ方法及びメッキ装
置に係り、特に、金の電解メッキに関する。半導体装置
の製造では、ウエーハ上の配線やバンプの形成に金の電
解メッキを用いる場合がある。そのメッキではメッキ厚
の管理が必要である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating method and a plating apparatus, and more particularly to electrolytic plating of gold. In the manufacture of semiconductor devices, gold electroplating may be used to form wiring and bumps on a wafer. In that plating, it is necessary to control the plating thickness.
【０００２】本発明は、その管理のため、メッキ中にメ
ッキ厚の監視がてきるようにするものである。[0002] The present invention, for its management, allows monitoring of the plating thickness during plating.
【０００３】[0003]
【従来の技術】従来のメッキ厚の管理は、メッキの終了
後に、メッキ装置からウエーハを取り出してメッキ厚を
測定し、異常があった場合にメッキ条件を調整してい
る。メッキ厚の測定には、例えばメッキ領域の縁を挟ん
で触針を移動させその縁の段差寸法を測定する接触型の
膜厚計などを用いる。2. Description of the Related Art In the conventional plating thickness control, a wafer is taken out of a plating apparatus after the plating is finished, the plating thickness is measured, and the plating condition is adjusted when there is an abnormality. To measure the plating thickness, for example, a contact-type film thickness meter that moves a stylus across the edge of the plating region to measure the step size of the edge is used.
【０００４】[0004]
【発明が解決しようとする課題】従って従来のメッキ厚
管理では、 メッキ厚の異常がメッキの事後に判明するため、そ
の異常に対するレスポンスが遅くなるばかりではなく、
不良発生の未然防止が不可能である。Therefore, in the conventional plating thickness management, since the abnormality of the plating thickness is found after the plating, not only the response to the abnormality is delayed but also
It is impossible to prevent the occurrence of defects.
【０００５】 メッキ厚の測定がメッキとは別途の工
程になるため、メッキのスループットが低下する。 メッキが金である場合には、メッキ厚測定の際の触
針の移動がメッキ面に傷をつける。このため形成した配
線やバンプが劣化する。 といった問題が生じている。Since the plating thickness measurement is a separate step from plating, the plating throughput is reduced. If the plating is gold, the movement of the stylus during plating thickness measurement scratches the plating surface. Therefore, the formed wirings and bumps are deteriorated. There is such a problem.
【０００６】及びの問題はメッキ中にメッキ厚を監
視することができるようになれば解決し、の問題はそ
の監視が無接触でできるようになれば解決する。そこで
本発明は、金の電解メッキに関し、メッキ中にメッキ厚
の監視ができ且つその監視を無接触で行うことができる
メッキ方法及びメッキ装置の提供を目的とする。The problems (1) and (2) will be solved if the plating thickness can be monitored during plating, and the problems (1) will be solved if the monitoring can be performed without contact. Therefore, the present invention relates to electrolytic plating of gold, and an object thereof is to provide a plating method and a plating apparatus capable of monitoring the plating thickness during plating and performing the monitoring without contact.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明によるメッキ方法は、金の電解メッキにおい
て、メッキ中のメッキ面に光を照射しその反射光を検出
して、該反射光の強度によりメッキ中のメッキ厚を監視
することを特徴としている。In order to achieve the above object, the plating method according to the present invention, in electrolytic plating of gold, irradiates the plating surface during plating with light, detects the reflected light, and reflects the reflected light. The feature is that the plating thickness during plating is monitored by the intensity of light.
【０００８】また、メッキ装置は、金の電解メッキを行
う装置であって、メッキ中のメッキ面に光を照射する光
照射手段と、該光の照射による該メッキ面からの反射光
の強度を測定する光検出手段とを備えることを特徴とし
ている。Further, the plating apparatus is an apparatus for electrolytically plating gold, and includes a light irradiating means for irradiating the plating surface being plated with light and an intensity of light reflected from the plating surface by the irradiation of the light. It is characterized in that it comprises a light detecting means for measuring.
【０００９】[0009]
【作用】本発明者は、金の電解メッキにおいて、メッキ
中のメッキ面に光を照射した際にその反射光の強度がメ
ッキ厚によって変化すること、換言すれば、メッキ厚に
よって見かけの反射率が変化することの知見を得た。In the electrolytic plating of gold, the present inventor has found that the intensity of the reflected light changes when the light is applied to the plating surface during plating, in other words, the apparent reflectance depends on the plating thickness. We obtained the knowledge that
【００１０】図２はそのメッキ厚による見かけの反射率
の変化特性図であり、図の横軸はメッキ厚ｔ、縦軸は見
かけの反射率ρ1 である。上述した反射光の強度に対し
て反射率ρ1 を対応させたのは、照射する光の強度に比
例して生ずる反射光の強度の変化を消去するためであ
る。反射率ρ1 の目盛は、シリコンウエーハの加工前の
面に光を照射した際の反射率を基準にして１００％とし
ており、反射率ρ1 は、メッキ厚ｔが６μm で約１８０
％、メッキ厚ｔが９μm で約１００％といった具合に、
メッキ厚ｔの増加に伴い低減する。これは、メッキ厚ｔ
の大小に係わらず真の反射率ρは一定であると考えられ
るが、メッキ厚ｔの増加と共にメッキ表面か荒れてきて
反射光の散乱が増大するために生ずる現象である。FIG. 2 is a characteristic diagram of change in apparent reflectance depending on the plating thickness. The horizontal axis of the figure is the plating thickness t, and the vertical axis is the apparent reflectance ρ 1 . The reason why the reflectance ρ 1 corresponds to the intensity of the reflected light described above is to eliminate the change in the intensity of the reflected light that occurs in proportion to the intensity of the irradiation light. Scale reflectance [rho 1 is the reflectivity when irradiated with light on the surface before processing of the silicon wafer is set to 100% based on the reflectance [rho 1 is about plating thickness t is at 6 [mu] m 180
%, The plating thickness t is 9 μm and about 100%,
It decreases as the plating thickness t increases. This is the plating thickness t
Although it is considered that the true reflectance ρ is constant regardless of the magnitude of, the phenomenon occurs because the plating surface is roughened as the plating thickness t increases and the scattering of reflected light increases.
【００１１】上述のことから、本メッキ方法及びメッキ
装置の構成によれば、金の電解メッキに関し、メッキ中
にメッキ厚の監視ができ且つその監視を無接触で行うこ
とができる。From the above, according to the present plating method and the configuration of the plating apparatus, it is possible to monitor the plating thickness during gold plating and to carry out the contactless monitoring of gold electroplating.
【００１２】[0012]
【実施例】以下本発明の実施例について図１のメッキ装
置側面図を用いて説明する。図１において、Ｗはメッキ
対象のウエーハ、１は金の電解メッキ用のメッキ液、２
は外容器、３はポンプ、４は内容器、５はアノード電
極、６はカソード電極、７は光照射手段、８は光検出手
段である。Embodiments of the present invention will be described below with reference to the side view of the plating apparatus shown in FIG. In FIG. 1, W is a wafer to be plated, 1 is a plating solution for gold electroplating, 2
Is an outer container, 3 is a pump, 4 is an inner container, 5 is an anode electrode, 6 is a cathode electrode, 7 is a light irradiation means, and 8 is a light detection means.
【００１３】このメッキ装置は、外容器２に入れたメッ
キ液１をポンプ３により内容器４に送り込み、そのメッ
キ液１を内容器４からオーバーフローさせ、その上にウ
エーハＷを下向きに載せてメッキを行う。その際、内容
器４の中に配置されたアノード電極５はメッキ電流の正
側が印加されてメッキ液１に通電し、内容器４の上縁に
配置されたカソード電極６はメッキ電流の負側が印加さ
れてウエーハＷに通電する。In this plating apparatus, the plating solution 1 contained in the outer container 2 is fed into the inner container 4 by the pump 3, the plating solution 1 is overflowed from the inner container 4, and the wafer W is placed downward on the plating solution 1 for plating. I do. At this time, the positive electrode of the plating current is applied to the anode electrode 5 arranged in the inner container 4 to energize the plating solution 1, and the cathode electrode 6 arranged at the upper edge of the inner container 4 has the negative side of the plating current. It is applied and the wafer W is energized.
【００１４】そして、メッキ中のメッキ厚の監視は、組
にした光照射手段７及び光検出手段８によって行う。光
照射手段７は、光源７ａとそれにに接続した光ファイバ
ー７ｂとを有し、光ファイバー７ｂの端面が内容器４の
中でウエーハＷに対向してメッキ中のメッキ面に光９ａ
を照射する。また、光検出手段８は、光検出器８ａとそ
れに接続し相互に端面を揃えて光ファイバー７ｂに沿わ
せた光ファイバー８ｂとを有し、光９ａの照射による反
射光９ｂを光ファイバー８ｂの端面で受光する。従って
光検出器８ａの出力レベルは、反射光９ｂの強度を示
す。The monitoring of the plating thickness during plating is performed by the light irradiation means 7 and the light detection means 8 which are paired. The light irradiating means 7 has a light source 7a and an optical fiber 7b connected to the light source 7a, and the end surface of the optical fiber 7b faces the wafer W in the inner container 4 and the light 9a is applied to the plating surface during plating.
Irradiate. Further, the photodetector means 8 has a photodetector 8a and an optical fiber 8b which is connected to the photodetector 8a and whose end faces are aligned with each other along the optical fiber 7b. To do. Therefore, the output level of the photodetector 8a indicates the intensity of the reflected light 9b.
【００１５】このような光照射手段７と光検出手段８を
組み合わせたものとして、三菱レイヨン社製のエスカ等
のバンドルファイバーを用いることができる。そして、
メッキ厚の増大と共に変化する前述図２の反射率ρ1 と
光検出器８ａの出力レベルとの関係を予め求めておく。As a combination of the light irradiation means 7 and the light detection means 8 as described above, a bundle fiber such as ESCA manufactured by Mitsubishi Rayon Co., Ltd. can be used. And
The relationship between the reflectance ρ 1 in FIG. 2 and the output level of the photodetector 8a, which changes with an increase in the plating thickness, is obtained in advance.
【００１６】これにより、金の電解メッキの際に、光検
出器８ａの出力レベルがメッキ厚を示すようになるの
で、メッキ中にメッキ厚の監視ができ且つその監視を無
接触で行うことができる。As a result, during the electrolytic plating of gold, the output level of the photodetector 8a indicates the plating thickness, so that the plating thickness can be monitored during plating and the monitoring can be performed without contact. it can.
【００１７】このことは、従来のメッキ厚管理の説明で
述べた〜の問題を解決する。なお本発明は、メッキ
対象物をメッキ液に浸漬して行うメッキの場合にも適用
可能であることはいうまでもない。This solves the problems (1) to (3) described in the description of the conventional plating thickness management. Needless to say, the present invention is also applicable to plating performed by immersing an object to be plated in a plating solution.
【００１８】[0018]
【発明の効果】以上説明したように本発明によれば、金
の電解メッキに関し、メッキ中にメッキ厚の監視ができ
且つその監視を無接触で行うことができるメッキ方法及
びメッキ装置が提供されて、不良発生の未然防止、スル
ープットの向上、メッキ面の損傷防止を可能にさせる効
果がある。As described above, according to the present invention, with respect to electrolytic plating of gold, a plating method and a plating apparatus capable of monitoring the plating thickness during plating and performing the monitoring without contact are provided. As a result, it is possible to prevent defects from occurring, improve throughput, and prevent damage to the plated surface.
【図１】 実施例を説明するためのメッキ装置側面図FIG. 1 is a side view of a plating apparatus for explaining an embodiment.
【図２】 金の電解メッキにおけるメッキ厚による見か
けの反射率の変化特性図[Fig. 2] Characteristic diagram of change in apparent reflectance due to plating thickness in gold electroplating
１ メッキ液、 ２ 外容器 ３ ポンプ ４ 内容器 ５ アノード電極 ６ カソード電極 ７ 光照射手段 ７ａ 光源 ７ｂ 光ファイバー ８ 光検出手段 ８ａ 光検出器 ８ｂ 光ファイバー ９ａ 照射する光 ９ｂ 反射光 Ｗ メッキ対象のウエーハ ｔ メッキ厚 ρ1 見かけの反射率1 plating liquid, 2 outer container 3 pump 4 inner container 5 anode electrode 6 cathode electrode 7 light irradiation means 7a light source 7b optical fiber 8 light detection means 8a photodetector 8b optical fiber 9a irradiation light 9b reflected light W plating target wafer t plating Thickness ρ 1 Apparent reflectance
Claims (2)
ッキ面に光を照射しその反射光を検出して、該反射光の
強度によりメッキ中のメッキ厚を監視することを特徴と
するメッキ方法。1. In gold electroplating, a plating method is characterized by irradiating a plating surface during plating with light, detecting the reflected light, and monitoring the plating thickness during plating by the intensity of the reflected light. ..
ッキ中のメッキ面に光を照射する光照射手段と、該光の
照射による該メッキ面からの反射光の強度を測定する光
検出手段とを備えることを特徴とするメッキ装置。2. An apparatus for electroplating gold, comprising: a light irradiating means for irradiating a plating surface being plated with light; and a light detection for measuring the intensity of light reflected from the plating surface by the irradiation of the light. And a plating device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP184692A JPH05186898A (en) | 1992-01-09 | 1992-01-09 | Plating method and plating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP184692A JPH05186898A (en) | 1992-01-09 | 1992-01-09 | Plating method and plating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05186898A true JPH05186898A (en) | 1993-07-27 |
Family
ID=11512919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP184692A Withdrawn JPH05186898A (en) | 1992-01-09 | 1992-01-09 | Plating method and plating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05186898A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007154287A (en) * | 2005-12-08 | 2007-06-21 | Fujifilm Corp | Plating thickness monitoring device and plating stopping device |
| JP2008208414A (en) * | 2007-02-26 | 2008-09-11 | Nec Electronics Corp | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
| WO2020242838A1 (en) * | 2019-05-24 | 2020-12-03 | Lam Research Corporation | Electrochemical deposition system including optical probes |
| JP7074937B1 (en) * | 2021-06-04 | 2022-05-24 | 株式会社荏原製作所 | Plating equipment |
-
1992
- 1992-01-09 JP JP184692A patent/JPH05186898A/en not_active Withdrawn
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007154287A (en) * | 2005-12-08 | 2007-06-21 | Fujifilm Corp | Plating thickness monitoring device and plating stopping device |
| JP4762702B2 (en) * | 2005-12-08 | 2011-08-31 | 富士フイルム株式会社 | Plating thickness monitor device and plating stop device |
| JP2008208414A (en) * | 2007-02-26 | 2008-09-11 | Nec Electronics Corp | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus |
| US7854824B2 (en) | 2007-02-26 | 2010-12-21 | Renesas Electronics Corporation | Method of manufacturing semiconductor device using electrochemical deposition with electric current revised by reflectance of every substrate surface and semiconductor manufacturing apparatus |
| WO2020242838A1 (en) * | 2019-05-24 | 2020-12-03 | Lam Research Corporation | Electrochemical deposition system including optical probes |
| JP7074937B1 (en) * | 2021-06-04 | 2022-05-24 | 株式会社荏原製作所 | Plating equipment |
| WO2022254690A1 (en) * | 2021-06-04 | 2022-12-08 | 株式会社荏原製作所 | Plating device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990408 |