JPH05183239A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPH05183239A JPH05183239A JP92231A JP23192A JPH05183239A JP H05183239 A JPH05183239 A JP H05183239A JP 92231 A JP92231 A JP 92231A JP 23192 A JP23192 A JP 23192A JP H05183239 A JPH05183239 A JP H05183239A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- submount
- semiconductor laser
- laser device
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体レーザ装置に係
り、特にＬＤ（半導体レーザ）チップを搭載するサブマ
ウントの構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device, and more particularly to a structure of a submount on which an LD (semiconductor laser) chip is mounted.
【０００２】[0002]
【従来の技術】図３は従来のＬＤチップが組み込まれた
半導体レーザ装置の構成を示す断面図であり、図４はＬ
Ｄチップが従来のサブマウントにマウントされた状態を
示す断面図である。これらの図において、１はＬＤチッ
プ、２はこのＬＤチップ１がマウントされたサブマウン
ト、３は放熱用ブロック、４はモニタ用のフォトダイオ
ード（ＰＤ）チップ、５はステム、６はワイヤで、ＰＤ
チップ４とリード線７を接続する。８はキャップ、９は
前記ＬＤチップ１の能動領域である活性層、１０はサブ
マウント基体、１１はこのサブマウント基体１０の表面
に形成された半田層である。2. Description of the Related Art FIG. 3 is a sectional view showing a structure of a semiconductor laser device incorporating a conventional LD chip, and FIG.
It is sectional drawing which shows the state by which the D chip was mounted by the conventional submount. In these figures, 1 is an LD chip, 2 is a submount on which the LD chip 1 is mounted, 3 is a heat dissipation block, 4 is a photodiode (PD) chip for monitoring, 5 is a stem, 6 is a wire, PD
The chip 4 and the lead wire 7 are connected. Reference numeral 8 is a cap, 9 is an active layer that is an active region of the LD chip 1, 10 is a submount substrate, and 11 is a solder layer formed on the surface of the submount substrate 10.
【０００３】次に、動作について説明する。図３におい
て、ＬＤチップ１は熱応力緩和材としてのサブマウント
２を介して放熱用ブロック３に組み立てられ、放熱用ブ
ロック３はモニタ用のＰＤチップ４がすでに組み込まれ
たステム５に組み立てられる。ＬＤチップ１およびＰＤ
チップ４はワイヤ６によりリード線７と電気的に接続さ
れる。最後にステム５に上面から覆うようにキャップ８
が取り付けられ、組立が完了する。図４に示すように、
ＬＤチップ１は、熱特性の向上をはかるため、熱源であ
るＬＤチップ１の活性層９がサブマウント２に近くなる
ように、ジャンクション・ダウン方式（Junction-down:
Ｊ／Ｄ）で組み立てられるのが一般的である。前記サブ
マウント２は、サブマウント基体１０の最表面に半田層
１１が形成された構造となっており、ＬＤチップ１，サ
ブマウント２，放熱用ブロック３が同時に接着される。
図３に示すように、リード線７に電圧を印加するとＬＤ
チップ１に電流が流れ、レーザ発振によりＬＤチップ１
の共振器の両端面から図３中の矢印のごとく、レーザ光
が２方向に放射される。一方のレーザ光は光システム用
の光源として用いられ、もう一方のレーザ光はＰＤチッ
プ４に入射し、モニタされることにより、前方に出射さ
れるレーザ光の出力制御に用いられる。ここで、ＰＤチ
ップ４に入射されるレーザ光は、図４に示すように、Ｌ
Ｄチップ１の活性層９から出射されたレーザ光の直接光
と、サブマウント２の最表面である半田層１１で反射さ
れた反射光とが合成された光となる。Next, the operation will be described. In FIG. 3, the LD chip 1 is assembled to the heat dissipation block 3 via the submount 2 as a thermal stress relaxation material, and the heat dissipation block 3 is assembled to the stem 5 in which the PD chip 4 for monitoring is already incorporated. LD chip 1 and PD
The chip 4 is electrically connected to the lead wire 7 by the wire 6. Finally, cap 8 to cover stem 5 from above.
Is attached and the assembly is completed. As shown in FIG.
In order to improve the thermal characteristics of the LD chip 1, the junction-down method (Junction-down: so that the active layer 9 of the LD chip 1 which is a heat source is close to the submount 2).
It is generally assembled by J / D). The submount 2 has a structure in which the solder layer 11 is formed on the outermost surface of the submount substrate 10, and the LD chip 1, the submount 2, and the heat dissipation block 3 are simultaneously bonded.
As shown in FIG. 3, when voltage is applied to the lead wire 7, LD
An electric current flows through the chip 1 and the LD chip 1 is generated by laser oscillation.
Laser light is radiated in two directions from both end surfaces of the resonator as shown by arrows in FIG. One laser beam is used as a light source for the optical system, and the other laser beam is incident on the PD chip 4 and monitored to be used for output control of the laser beam emitted forward. Here, the laser light incident on the PD chip 4 is L as shown in FIG.
The direct light of the laser light emitted from the active layer 9 of the D chip 1 and the reflected light reflected by the solder layer 11 which is the outermost surface of the submount 2 are combined light.
【０００４】[0004]
【発明が解決しようとする課題】上記した従来の半導体
レーザ装置においては、活性層９がサブマウント２側に
接近されたＪ／Ｄ方式で組み立てられているため、半田
層１１で反射したレーザ光のＰＤチップ４に入射した光
は、特に環境試験等に用いた場合には、半田層１１の表
面状態が変化するため、ＰＤチップ４に入射する光の状
態が不安定となり、ＬＤチップ１の前方向に出射される
レーザ光の出力制御を行う上で問題があった。また、上
記経時的変化のみならず製造時にサブマウント２表面の
半田層１１による活性層９へのショート等の発生による
歩留り低下等の問題点もあった。In the conventional semiconductor laser device described above, since the active layer 9 is assembled by the J / D method in which the active layer 9 is close to the submount 2, the laser light reflected by the solder layer 11 is used. The light incident on the PD chip 4 changes the surface state of the solder layer 11 particularly when it is used for an environmental test or the like, so that the state of the light incident on the PD chip 4 becomes unstable, and There was a problem in controlling the output of the laser beam emitted in the forward direction. In addition to the above-mentioned change over time, there is a problem that the yield decreases due to occurrence of a short circuit to the active layer 9 due to the solder layer 11 on the surface of the submount 2 during manufacturing.
【０００５】本発明は、上記のような問題点を解消する
ためになされたもので、ＬＤチップから出射されたレー
ザ光のモニタ用のＰＤチップへの入射光量が安定となる
半導体レーザ装置を得ることを目的とする。The present invention has been made in order to solve the above-mentioned problems, and obtains a semiconductor laser device in which the amount of laser light emitted from an LD chip to a PD chip for monitoring is stable. The purpose is to
【０００６】[0006]
【課題を解決するための手段】本発明に係る半導体レー
ザ装置は、ＬＤ共振器方向のサブマウント寸法をＬＤチ
ップの共振器長よりも小さくしてサブマウントの両端を
ＬＤチップの両端面よりそれぞれ内側に位置させたもの
である。In a semiconductor laser device according to the present invention, the submount dimension in the LD resonator direction is made smaller than the resonator length of the LD chip, and both ends of the submount are respectively separated from both end faces of the LD chip. It is located inside.
【０００７】また、サブマウント寸法をＬＤチップの共
振器長よりも小さくする手段として、サブマウントのＬ
Ｄチップの対向面側に段差を形成することにより行った
ものである。Also, as means for making the submount size smaller than the resonator length of the LD chip, the L of the submount is used.
This is done by forming a step on the opposite surface side of the D chip.
【０００８】[0008]
【作用】本発明においては、ＬＤチップから出射された
レーザ光はサブマウントに反射することなく直接光とし
て、ＰＤチップに入射される。In the present invention, the laser light emitted from the LD chip is incident on the PD chip as direct light without being reflected by the submount.
【０００９】[0009]
【実施例】以下、本発明の一実施例を図について説明す
る。図１は本発明の一実施例によるＬＤチップとサブマ
ウントの関係を示す断面図である。図１において、図
３、図４と同一符号は同一構成部分を示すが、本実施例
ではサブマウント基体１０のＬＤ共振器方向のサブマウ
ント寸法Ｌ10をＬＤチップ１の共振器長Ｌ1 より小さく
形成し、サブマウント２の端面２ａがＬＤチップ１の共
振器の端面１ａの内側になるように取り付けたものであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the relationship between an LD chip and a submount according to an embodiment of the present invention. In FIG. 1, the same reference numerals as those in FIGS. 3 and 4 indicate the same components, but in the present embodiment, the submount size L 10 of the submount substrate 10 in the LD resonator direction is determined from the resonator length L 1 of the LD chip 1. It is formed small and is attached so that the end surface 2a of the submount 2 is inside the end surface 1a of the resonator of the LD chip 1.
【００１０】半導体レーザ装置の基本動作については従
来例で述べたので省略する。図１に示すような本発明に
よるサブマウント２を用いてＬＤチップ１をＪ／Ｄに組
み立てた場合、ＬＤチップ１の活性層９から出射された
レーザ光は、サブマウント２の半田層１１で反射するこ
となく、モニタ用のＰＤチップ４に入射するので、環境
試験によるモニタ用のＰＤチップ４への入射光は安定
し、信頼性の高い半導体レーザ装置が得られる。Since the basic operation of the semiconductor laser device has been described in the conventional example, the description thereof will be omitted. When the LD chip 1 is assembled in J / D using the submount 2 according to the present invention as shown in FIG. 1, the laser light emitted from the active layer 9 of the LD chip 1 is generated by the solder layer 11 of the submount 2. Since the light is incident on the monitor PD chip 4 without being reflected, the incident light on the monitor PD chip 4 by the environmental test is stable, and a highly reliable semiconductor laser device can be obtained.
【００１１】図２は本発明の他の実施例を示す断面図
で、サブマウント２全体の寸法は従来例と同じ寸法であ
るが、ＬＤチップ１の対向面側、つまり共振器後端面部
に対応する部分を切り欠いて段差１２を設けることによ
り、サブマウント寸法Ｌ10をＬＤチップ１の共振器長Ｌ
1 より小さくしたものであり、作用としては、図１の実
施例と同様である。なお、図２の実施例で、反対側（図
２の左側）に段差１２を設けることもできる。FIG. 2 is a cross-sectional view showing another embodiment of the present invention. Although the size of the entire submount 2 is the same as that of the conventional example, it is located on the opposite surface side of the LD chip 1, that is, on the resonator rear end surface portion. By cutting out the corresponding portion and providing the step 12, the submount size L 10 can be adjusted to the resonator length L of the LD chip 1.
It is smaller than 1 , and its operation is similar to that of the embodiment shown in FIG. In the embodiment of FIG. 2, the step 12 may be provided on the opposite side (left side of FIG. 2).
【００１２】[0012]
【発明の効果】以上説明したように、本発明は、サブマ
ウント寸法をＬＤチップの共振器長より小さくしてサブ
マウントの両端をＬＤチップの両端面よりそれぞれ内側
に位置させたので、ＬＤチップから出射されたレーザ光
がサブマウントの半田層で反射することなく、直接光の
みがＰＤチップに入射する。したがって、環境試験等に
より半田層の表面状態が変化したとしても、その変化の
影響を受けることがなくなり、信頼性の高い半導体レー
ザ装置が得られる効果がある。As described above, according to the present invention, the size of the submount is made smaller than the resonator length of the LD chip, and both ends of the submount are located inside both end surfaces of the LD chip. The laser light emitted from is not reflected by the solder layer of the submount, and only the direct light is incident on the PD chip. Therefore, even if the surface state of the solder layer changes due to an environmental test or the like, it is not affected by the change, and a highly reliable semiconductor laser device can be obtained.
【００１３】また、サブマウントのＬＤチップの対向面
側に段差を形成してサブマウント寸法をＬＤチップの共
振器長より小さくしたので、既存のサブマウントに若干
の加工を施すことで使用可能である利点がある。Further, since a step is formed on the surface of the submount opposite to the LD chip so that the submount size is smaller than the resonator length of the LD chip, it can be used by slightly modifying the existing submount. There are some advantages.
【図１】本発明の一実施例による半導体レーザ装置のＬ
Ｄチップがサブマウントにダイボンドされた状態を示す
断面図である。FIG. 1 shows an L of a semiconductor laser device according to an embodiment of the present invention.
It is sectional drawing which shows the state by which the D chip was die-bonded to the submount.
【図２】本発明の他の実施例を示す断面図である。FIG. 2 is a sectional view showing another embodiment of the present invention.
【図３】従来の半導体レーザ装置を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional semiconductor laser device.
【図４】従来のＬＤチップのサブマウントへのダイボン
ド状態を示す断面図である。FIG. 4 is a cross-sectional view showing a die-bonding state of a conventional LD chip to a submount.
１ ＬＤチップ １ａ 端面 ２ サブマウント ２ａ 端面 ３ 放熱用ブロック ４ ＰＤチップ ５ ステム ６ ワイヤ ７ リード線 ８ キャップ ９ 活性層 １０ サブマウント基体 １１ 半田層 １２ 段差 1 LD Chip 1a End Face 2 Submount 2a End Face 3 Heat Dissipation Block 4 PD Chip 5 Stem 6 Wire 7 Lead Wire 8 Cap 9 Active Layer 10 Submount Base 11 Solder Layer 12 Step
Claims (2)
ＬＤチップを熱応力緩和材としてのサブマウントを介し
て放熱用ブロックに組み立てた半導体レーザ装置におい
て、前記サブマウントのＬＤ共振器方向のサブマウント
寸法を前記ＬＤチップの共振器長よりも小さくして前記
サブマウントの両端を前記ＬＤチップの両端面よりそれ
ぞれ内側に位置させたことを特徴とする半導体レーザ装
置。1. A semiconductor laser device in which LD chips, each of which emits a laser beam from both end surfaces, are assembled on a heat dissipation block via a submount as a thermal stress relaxation material, wherein the submount in the LD resonator direction of the submount. A semiconductor laser device having a dimension smaller than a cavity length of the LD chip so that both ends of the submount are located inside of both end faces of the LD chip, respectively.
ＬＤチップを熱応力緩和材としてのサブマウントを介し
て放熱用ブロックに組み立てた半導体レーザ装置におい
て、前記サブマウントのＬＤチップの対向面側に段差を
形成し、前記サブマウントのＬＤ共振器方向のサブマウ
ント寸法を前記ＬＤチップの共振器長よりも小さくして
前記サブマウントの両端を前記ＬＤチップの両端面より
それぞれ内側に位置させたことを特徴とする半導体レー
ザ装置。2. A semiconductor laser device in which LD chips, each of which emits a laser beam from both end faces, are assembled into a heat dissipation block via a submount as a thermal stress relaxation material, and the LD chip of the submount faces the opposite surface side. A step is formed, the submount dimension of the submount in the LD resonator direction is made smaller than the resonator length of the LD chip, and both ends of the submount are located inside both end surfaces of the LD chip. And a semiconductor laser device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP92231A JPH05183239A (en) | 1992-01-06 | 1992-01-06 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP92231A JPH05183239A (en) | 1992-01-06 | 1992-01-06 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05183239A true JPH05183239A (en) | 1993-07-23 |
Family
ID=11468197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP92231A Pending JPH05183239A (en) | 1992-01-06 | 1992-01-06 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05183239A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237481A (en) * | 2000-02-24 | 2001-08-31 | Citizen Electronics Co Ltd | Mounting structure for laser diode and mounting method thereof |
| JP2006128558A (en) * | 2004-11-01 | 2006-05-18 | Sony Corp | Semiconductor laser, semiconductor laser mounting method, semiconductor laser mounting structure, and photodisc device |
| JP2007189075A (en) * | 2006-01-13 | 2007-07-26 | Sharp Corp | Semiconductor laser element, and manufacturing method, mounting structure and mounting method thereof |
| US7729402B2 (en) | 2002-10-29 | 2010-06-01 | Sharp Kabushiki Kaisha | Semiconductor laser assembly |
| WO2019180773A1 (en) * | 2018-03-19 | 2019-09-26 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
| WO2023276624A1 (en) * | 2021-06-30 | 2023-01-05 | 京セラ株式会社 | Light-emitting body, method and apparatus for producing light-emitting body, light-emitting element and method for producing same, and electronic device |
| DE112020007153T5 (en) | 2020-08-12 | 2023-03-02 | Mitsubishi Electric Corporation | semiconductor laser machine |
-
1992
- 1992-01-06 JP JP92231A patent/JPH05183239A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001237481A (en) * | 2000-02-24 | 2001-08-31 | Citizen Electronics Co Ltd | Mounting structure for laser diode and mounting method thereof |
| US7729402B2 (en) | 2002-10-29 | 2010-06-01 | Sharp Kabushiki Kaisha | Semiconductor laser assembly |
| JP2006128558A (en) * | 2004-11-01 | 2006-05-18 | Sony Corp | Semiconductor laser, semiconductor laser mounting method, semiconductor laser mounting structure, and photodisc device |
| JP2007189075A (en) * | 2006-01-13 | 2007-07-26 | Sharp Corp | Semiconductor laser element, and manufacturing method, mounting structure and mounting method thereof |
| WO2019180773A1 (en) * | 2018-03-19 | 2019-09-26 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
| JPWO2019180773A1 (en) * | 2018-03-19 | 2020-04-23 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
| DE112020007153T5 (en) | 2020-08-12 | 2023-03-02 | Mitsubishi Electric Corporation | semiconductor laser machine |
| US11699890B2 (en) | 2020-08-12 | 2023-07-11 | Mitsubishi Electric Corporation | Semiconductor laser machine |
| WO2023276624A1 (en) * | 2021-06-30 | 2023-01-05 | 京セラ株式会社 | Light-emitting body, method and apparatus for producing light-emitting body, light-emitting element and method for producing same, and electronic device |
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