JPH05183234A - Semiconductor light emitting device and manufacturing method thereof - Google Patents
Semiconductor light emitting device and manufacturing method thereofInfo
- Publication number
- JPH05183234A JPH05183234A JP22092A JP22092A JPH05183234A JP H05183234 A JPH05183234 A JP H05183234A JP 22092 A JP22092 A JP 22092A JP 22092 A JP22092 A JP 22092A JP H05183234 A JPH05183234 A JP H05183234A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- current blocking
- conductivity type
- blocking layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Semiconductor Lasers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、埋込ヘテロ構造を有す
る半導体発光装置およびその製造方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device having a buried hetero structure and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図３は、例えばElectronics Letters 21
May 1987 Vol.23 pp546-547に示された従来の埋込ヘテ
ロ構造（以下、ＢＨ構造と略す）を有するＤＦＢレーザ
の回折格子がないためにファブリペローモードで発振す
る半導体レーザを示す断面図である。この図において、
１ａはｐ−ＩｎＰ基板（以下、単に基板という。その他
の符号についても実施例を含め繰り返し用いる場合は同
様とする）、１ｂはｐ−ＩｎＰ下クラッド層、２はｎ−
ＩｎＰ電流ブロック層、３はｐ−ＩｎＰ電流ブロック
層、４はＩｎＧａＡｓＰ活性層、５ａ，５ｂはｎ−Ｉｎ
Ｐ上クラッド層、６はｎ−ＩｎＧａＡｓＰ電極オーミッ
クコンタクト層、７は絶縁膜、８はｎ側電極、９はｐ側
電極である。2. Description of the Related Art FIG. 3 shows, for example, Electronics Letters 21.
FIG. 1 is a cross-sectional view showing a semiconductor laser that oscillates in a Fabry-Perot mode because there is no diffraction grating of a DFB laser having a conventional buried hetero structure (hereinafter, abbreviated as BH structure) shown in May 1987 Vol. is there. In this figure,
Reference numeral 1a denotes a p-InP substrate (hereinafter, simply referred to as a substrate; the same applies to other reference numerals when repeatedly used including the embodiment), 1b denotes a p-InP lower cladding layer, and 2 denotes n-.
InP current blocking layer, 3 p-InP current blocking layer, 4 InGaAsP active layer, 5a and 5b n-In
An upper cladding layer of P, 6 is an n-InGaAsP electrode ohmic contact layer, 7 is an insulating film, 8 is an n-side electrode, and 9 is a p-side electrode.
【０００３】次に、従来の半導体発光装置の製造工程に
ついて説明する。第１回目の結晶成長で、基板１ａ上に
下クラッド層１ｂ，活性層４，上クラッド層５ａを順次
成長後、幅１〜２μｍのメサを形成し、第２回目の結晶
成長でメサの両脇を電流ブロック層２，３で埋込み、引
き続いて上クラッド層５ｂ，電極オーミックコンタクト
層６を順次成長させる。最後に電極窓を残して絶縁膜７
を形成し、ｎ側およびｐ側電極８，９を形成する。結晶
成長は第１回目は有機金属気相成長法（以下、ＭＯＶＰ
Ｅと略す）で行い、第２回目は液相成長法（以下、ＬＰ
Ｅと略する）で行われる。Next, a manufacturing process of a conventional semiconductor light emitting device will be described. In the first crystal growth, the lower clad layer 1b, the active layer 4, and the upper clad layer 5a are sequentially grown on the substrate 1a, and then a mesa having a width of 1 to 2 μm is formed. The sides are filled with the current blocking layers 2 and 3, and subsequently, the upper cladding layer 5b and the electrode ohmic contact layer 6 are sequentially grown. Finally, leaving the electrode window, insulating film 7
And n-side and p-side electrodes 8 and 9 are formed. The first crystal growth was metalorganic vapor phase epitaxy (hereinafter MOVP
Abbreviated as E), and the second time is a liquid phase growth method (hereinafter, LP
Abbreviated as E).
【０００４】[0004]
【発明が解決しようとする課題】従来の半導体発光装置
は以上のようにして製造されているので、高出力・低し
きい動作を起こさせるために電流ブロック層２の先端を
上クラッド層５ａにある程度近づけねばならない。ま
た、電流ブロック層２が先細りの構造のため、活性層４
の両脇のリークパス制御が困難であった。Since the conventional semiconductor light emitting device is manufactured as described above, the tip of the current blocking layer 2 is formed on the upper cladding layer 5a in order to cause a high output and low threshold operation. You have to get closer to some extent. Further, since the current blocking layer 2 has a tapered structure, the active layer 4
It was difficult to control the leak path on both sides.
【０００５】本発明は、上記のような問題点を解消する
ためになされたもので、電流ブロック層を活性層や上ク
ラッド層に設計通りに近接させることができ、強固な電
流ブロック領域をもつ半導体発光装置およびその製造方
法を得ることを目的とする。The present invention has been made in order to solve the above problems, and the current blocking layer can be brought close to the active layer and the upper cladding layer as designed, and has a strong current blocking region. An object is to obtain a semiconductor light emitting device and a manufacturing method thereof.
【０００６】[0006]
【課題を解決するための手段】本発明に係る半導体発光
装置は、第１導電形の半導体基板と、この半導体基板上
に形成された第２導電形の電流ブロック層と、第１導電
形で電流ブロック層と同じ結晶層からなり、半導体基板
上と電流ブロック層上にかけて形成された下クラッド層
を兼ねる電流ブロック層と、この下クラッド層を兼ねる
電流ブロック層上に順次形成された活性層，上クラッド
層，ｎ側電極，ならびにｐ側電極とを具備したものであ
る。また、本発明に係る半導体発光装置の製造方法は、
第１導電形の半導体基板上に第２導電形の電流ブロック
層を形成し、前記半導体基板と同じ導電形の下クラッド
層が電流ブロック層と同じ結晶成長法により埋込み成長
し、前記埋込み成長された電流ブロック層上に活性領域
および上クラッド層等を形成するものである。A semiconductor light emitting device according to the present invention comprises a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type formed on the semiconductor substrate, and a first conductivity type. A current block layer made of the same crystal layer as the current block layer, which also functions as a lower clad layer formed over the semiconductor substrate and the current block layer, and an active layer sequentially formed on the current block layer which also functions as the lower clad layer, The upper clad layer, the n-side electrode, and the p-side electrode are provided. Further, the method for manufacturing a semiconductor light emitting device according to the present invention,
A second conductivity type current blocking layer is formed on a first conductivity type semiconductor substrate, and a lower clad layer of the same conductivity type as the semiconductor substrate is buried and grown by the same crystal growth method as that of the current blocking layer. The active region and the upper clad layer are formed on the current blocking layer.
【０００７】[0007]
【作用】本発明においては、半導体基板と同じ導電形の
電流ブロック層が下クラッド層を兼ねる電流ブロック層
と同じ結晶層で成長されるので、第２導電形の電流ブロ
ック層と活性領域とが最短距離で制御性よく形成され
る。In the present invention, since the current blocking layer of the same conductivity type as the semiconductor substrate is grown in the same crystal layer as the current blocking layer which also serves as the lower cladding layer, the current blocking layer of the second conductivity type and the active region are formed. It is formed with good controllability at the shortest distance.
【０００８】[0008]
【実施例】以下、本発明の一実施例を図について説明す
る。図１は本発明により製造された半導体発光装置の一
例を示す断面図であり、図２は本発明の半導体発光装置
の製造方法の一実施例の製造工程を示す断面図である。
これらの図において、図３と同一符号は同一構成部分を
示すが、電流ブロック層３は基板１ａと同じ導電形をも
ち、活性層４の直下では下クラッド層の役割を兼ねる。
１０ａは電流ブロック開口部、すなわち活性領域となる
部分にパターニングされたＳｉＯ2 等の絶縁膜で、１０
ｂは前記活性層４上にパターニングされ、これをマスク
にして活性層４をエッチングするＳｉＯ2 等の絶縁膜で
ある。１１は（１００）基板上にＭＯＶＰＥ成長した時
の電流ブロック層２の（１１１）Ｂ面を表す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 is a sectional view showing an example of a semiconductor light emitting device manufactured according to the present invention, and FIG. 2 is a sectional view showing a manufacturing process of an embodiment of a method for manufacturing a semiconductor light emitting device according to the present invention.
In these figures, the same reference numerals as in FIG. 3 indicate the same components, but the current block layer 3 has the same conductivity type as the substrate 1a, and also serves as the lower cladding layer immediately below the active layer 4.
Reference numeral 10a denotes an insulating film such as SiO 2 patterned on the current block opening, that is, a portion to be an active region.
Reference numeral b is an insulating film such as SiO 2 which is patterned on the active layer 4 and which is used as a mask to etch the active layer 4. Reference numeral 11 denotes the (111) B plane of the current blocking layer 2 when MOVPE-grown on the (100) substrate.
【０００９】図１に示す構造においては、あらかじめ結
晶層が均一な先細りのない電流ブロック層２を形成した
のちに、活性層４を含むダブルヘテロ構造を形成する
際、活性層４を電流ブロック層２にできるだけ近づける
（最短距離約０．５μｍ）成長をＭＯＶＰＥで行うこと
で、活性層４の両脇のリークパスが低減できる。In the structure shown in FIG. 1, when the double hetero structure including the active layer 4 is formed after the current block layer 2 having a uniform crystal layer and having no taper is formed in advance, the active layer 4 is replaced with the current block layer. By performing growth by MOVPE as close to 2 as possible (shortest distance about 0.5 μm), leak paths on both sides of the active layer 4 can be reduced.
【００１０】次に、図１の半導体発光装置の製造方法を
図２（ａ）〜（ｃ）について説明する。第１導電形であ
るｐ形の基板１ａ上に絶縁膜１０ａを１〜２μｍの幅で
ストライプ状に形成した後、第２導電形であるｎ形の電
流ブロック層２を成長する。基板１ａに（１００）面を
用いると、（１１１）Ｂ面１１が電流ブロック層２の側
面に形成される（図２（ａ））。次に、絶縁膜１０ａを
除去した後、２回目の成長で電流ブロック層３および活
性層４を形成する。この時、電流ブロック層３は、活性
層４と電流ブロック層２との最短距離が０．５μｍ程度
になるように成長する（図２（ｂ））。次に、電流ブロ
ック開口幅のみを残して、すなわち絶縁膜１０ｂをマス
クにして電流ブロック層３上の活性層４をエッチングし
て取り除き（図２（ｃ））、さらに、絶縁膜１０ｂを除
去した後、３回目の成長で図示は省略したが、上クラッ
ド層５およびコンタクト層６を形成し、さらに電極窓を
残して絶縁膜７を形成した後、ｎ側およびｐ側電極８，
９を形成して図１に示す半導体発光装置が得られる。Next, a method of manufacturing the semiconductor light emitting device of FIG. 1 will be described with reference to FIGS. After forming the insulating film 10a in a stripe shape with a width of 1 to 2 μm on the p-type substrate 1a of the first conductivity type, the n-type current blocking layer 2 of the second conductivity type is grown. When the (100) plane is used for the substrate 1a, the (111) B plane 11 is formed on the side surface of the current blocking layer 2 (FIG. 2A). Next, after removing the insulating film 10a, the current block layer 3 and the active layer 4 are formed by the second growth. At this time, the current blocking layer 3 grows so that the shortest distance between the active layer 4 and the current blocking layer 2 is about 0.5 μm (FIG. 2B). Next, the active layer 4 on the current block layer 3 is removed by etching while leaving only the current block opening width, that is, using the insulating film 10b as a mask (FIG. 2C), and further the insulating film 10b is removed. After that, although not shown in the third growth, the upper clad layer 5 and the contact layer 6 are formed, and the insulating film 7 is further formed leaving the electrode window, and then the n-side and p-side electrodes 8,
9 is formed to obtain the semiconductor light emitting device shown in FIG.
【００１１】なお、上記実施例では、２回目の結晶成長
では、活性層４までを成長させたが、上クラッド層５ま
で成長させてもよい。この場合には、エッチングで電流
ブロック層３上の結晶層は除去される。In the above embodiment, the active layer 4 was grown in the second crystal growth, but the upper clad layer 5 may be grown. In this case, the crystal layer on the current block layer 3 is removed by etching.
【００１２】[0012]
【発明の効果】以上説明したように、本発明の半導体発
光装置およびその製造方法によれば、第１導電形の半導
体基板上に１回目の結晶成長で成長させる電流ブロック
層を活性領域に近づけるように下クラッド層を兼ねる前
記半導体基板と同じ導電形の電流ブロック層を形成する
ことで、第２導電形の電流ブロック層と活性領域とが最
短距離で形成されるので、リークパス制御が容易で、強
固な電流ブロッキング効果を得ることができ、かつ低し
きい値・高出力の半導体発光装置が得られる効果があ
る。As described above, according to the semiconductor light emitting device and the method of manufacturing the same of the present invention, the current blocking layer grown by the first crystal growth on the semiconductor substrate of the first conductivity type is brought close to the active region. By forming the current blocking layer of the same conductivity type as that of the semiconductor substrate, which also serves as the lower cladding layer, the current blocking layer of the second conductivity type and the active region are formed in the shortest distance, so that the leak path can be easily controlled. In addition, a strong current blocking effect can be obtained, and a low threshold and high output semiconductor light emitting device can be obtained.
【図１】本発明の一実施例を示す半導体発光装置の断面
図である。FIG. 1 is a cross-sectional view of a semiconductor light emitting device showing an embodiment of the present invention.
【図２】本発明の半導体発光装置の製造方法の一実施例
を示すフロー図である。FIG. 2 is a flow chart showing an embodiment of a method for manufacturing a semiconductor light emitting device of the present invention.
【図３】従来の半導体発光装置の断面図である。FIG. 3 is a cross-sectional view of a conventional semiconductor light emitting device.
１ａ ｐ−ＩｎＰ基板 １ｂ ｐ−ＩｎＰ下クラッド層 ２ ｎ−ＩｎＰ電流ブロック層 ３ ｐ−ＩｎＰ電流ブロック層 ４ ＩｎＧａＡｓＰ活性層 ５ ｎ−ＩｎＰ上クラッド層 ６ ｎ−ＩｎＧａＡｓＰ電極オーミックコンタクト層 ７ 絶縁膜 ８ ｐ側電極 ９ ｎ側電極 1a p-InP substrate 1b p-InP lower cladding layer 2 n-InP current blocking layer 3 p-InP current blocking layer 4 InGaAsP active layer 5 n-InP upper cladding layer 6 n-InGaAsP electrode ohmic contact layer 7 insulating film 8 p Side electrode 9 n-side electrode
Claims (2)
基板上に形成された第２導電形の電流ブロック層と、第
１導電形で前記電流ブロック層と同じ結晶層からなり、
前記半導体基板上と電流ブロック層上にかけて形成され
た下クラッド層を兼ねる電流ブロック層と、この下クラ
ッド層を兼ねる電流ブロック層上に順次形成された活性
層，上クラッド層，ｎ側電極，ならびにｐ側電極とを具
備したことを特徴とする半導体発光装置。1. A semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type formed on the semiconductor substrate, and a crystal layer of the first conductivity type which is the same as the current blocking layer,
A current blocking layer that also functions as a lower cladding layer formed on the semiconductor substrate and the current blocking layer, an active layer, an upper cladding layer, an n-side electrode that are sequentially formed on the current blocking layer that also functions as the lower cladding layer, and A semiconductor light-emitting device comprising a p-side electrode.
状の絶縁膜を形成し、この絶縁膜をマスクにして第２導
電形の電流ブロック層を形成する工程と、前記絶縁膜を
除去した後、前記半導体基板と同じ導電形の下クラッド
層を兼ねる電流ブロック層を前記第２導電形の電流ブロ
ック層の結晶成長と同一の結晶成長法により形成し、さ
らにその上に活性領域を形成し、前記活性領域上および
前記半導体基板と同一導電形の電流ブロック層上に上ク
ラッド層を形成する工程とを含むことを特徴とする半導
体発光装置の製造方法。2. A step of forming a stripe-shaped insulating film on a semiconductor substrate of the first conductivity type, forming a current blocking layer of the second conductivity type by using this insulating film as a mask, and removing the insulating film. Then, a current blocking layer which also serves as a lower cladding layer of the same conductivity type as the semiconductor substrate is formed by the same crystal growth method as the crystal growth of the second conductivity type current blocking layer, and an active region is further formed thereon. And a step of forming an upper clad layer on the active region and on a current block layer having the same conductivity type as that of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22092A JPH05183234A (en) | 1992-01-06 | 1992-01-06 | Semiconductor light emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22092A JPH05183234A (en) | 1992-01-06 | 1992-01-06 | Semiconductor light emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05183234A true JPH05183234A (en) | 1993-07-23 |
Family
ID=11467884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22092A Pending JPH05183234A (en) | 1992-01-06 | 1992-01-06 | Semiconductor light emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05183234A (en) |
-
1992
- 1992-01-06 JP JP22092A patent/JPH05183234A/en active Pending
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