JPH05175288A - Optical/electrical probe and method for evaluating optical element - Google Patents
Optical/electrical probe and method for evaluating optical elementInfo
- Publication number
- JPH05175288A JPH05175288A JP3344591A JP34459191A JPH05175288A JP H05175288 A JPH05175288 A JP H05175288A JP 3344591 A JP3344591 A JP 3344591A JP 34459191 A JP34459191 A JP 34459191A JP H05175288 A JPH05175288 A JP H05175288A
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- Prior art keywords
- electrode
- optical
- waveguide
- light
- light receiving
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Light Receiving Elements (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は受光素子用の評価装置等
の光・電気プローブに関し、特に、光通信等に用いる受
光素子の光・電気特性の評価装置等の光・電気プローブ
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical / electrical probe such as an evaluation device for a light receiving element, and more particularly to an optical / electrical probe such as an evaluation device for optical / electrical characteristics of a light receiving element used for optical communication and the like.
【０００２】[0002]
【従来の技術】半導体受光素子の製造工程においては、
素子特性の評価をウエハ状態のままで各チップ毎に行
い、良品チップの選別を行っている。2. Description of the Related Art In the process of manufacturing a semiconductor light receiving element,
The element characteristics are evaluated for each chip in the wafer state and the non-defective chips are selected.
【０００３】特性の評価項目としては、暗電流、光
電変換効率、応答特性などがある。の暗電流の評価
については電気特性の測定のみであるが、との項目
については、光を受光素子チップの受光部に入射しなが
ら電気特性を測定評価する必要がある。そのためには、
評価装置としては、光入射装置と、素子の電極部との電
気的接続用プローブとの両方を備える必要がある。The characteristic evaluation items include dark current, photoelectric conversion efficiency, and response characteristics. Regarding the evaluation of the dark current, only the measurement of the electric characteristics is performed. For the above items, it is necessary to measure and evaluate the electric characteristics while the light is incident on the light receiving portion of the light receiving element chip. for that purpose,
As the evaluation device, it is necessary to include both the light incident device and the probe for electrical connection with the electrode portion of the element.
【０００４】図７に従来の技術による受光素子の評価装
置の構成を示す。ｘ、ｙ、ｚ軸方向に位置決め移動が可
能な試料台１０の台上に評価される半導体受光素子のチ
ップ２０が置かれる。FIG. 7 shows the structure of a conventional light receiving element evaluation apparatus. The chip 20 of the semiconductor light receiving element to be evaluated is placed on the stage of the sample stage 10 which can be positioned and moved in the x-, y-, and z-axis directions.
【０００５】図２では、簡単のためチップ２０は一個で
描いてあるが、実際には、複数のチップがつながったも
のや、複数のチップからなる１枚のウエハであることが
一般的である。In FIG. 2, a single chip 20 is shown for simplicity, but in practice, it is generally one in which a plurality of chips are connected or one wafer composed of a plurality of chips. ..
【０００６】一個のチップ２０は例えば、図示のように
ｐ+ 型の受光部２１と、光電変換により発生した電気信
号を取り出すｐ電極２２と、チップ２０のｎ型領域と電
気的に接続しているｎ電極２３とを含む。ｎ電極２３
は、試料台１０を介して接地されている。なお、測定周
波数が高周波の場合にはｎ電極を受光素子２０の表面の
ｐ電極２２の近傍に配置することもある。One chip 20 is electrically connected to, for example, a p + type light receiving portion 21, a p electrode 22 for extracting an electric signal generated by photoelectric conversion, and an n type region of the chip 20 as shown in the figure. And the n-electrode 23 that is present. n-electrode 23
Are grounded via the sample table 10. When the measurement frequency is high, the n electrode may be arranged on the surface of the light receiving element 20 in the vicinity of the p electrode 22.
【０００７】電気的特性を測定するためのプローブとし
て金属針３０が用いられ、チップ２０のｐ電極２２に接
触させられる。金属針３０は図示しないマニュピレータ
により位置決めされる。金属針３０は、直流電源３１の
一方の電極に電流測定器３２を介して接続される。直流
電源３１の他方の電極は試料台１０に接続される。A metal needle 30 is used as a probe for measuring electrical characteristics and is brought into contact with the p-electrode 22 of the chip 20. The metal needle 30 is positioned by a manipulator (not shown). The metal needle 30 is connected to one electrode of a DC power supply 31 via a current measuring device 32. The other electrode of the DC power supply 31 is connected to the sample table 10.
【０００８】光入射のための装置として、光ファイバ４
０が設けられる。光ファイバ４０は図示しない別のマニ
ュピレータにより移動可能であり、先端の光出射部を受
光部２１の面上にくるように位置合わせされる。光ファ
イバユニット４０は光源４１から光を導入し、その先端
部から光をチップ２０の受光部２１に照射する。An optical fiber 4 is used as a device for light incidence.
0 is provided. The optical fiber 40 can be moved by another manipulator (not shown), and is aligned so that the light emitting portion at the tip is on the surface of the light receiving portion 21. The optical fiber unit 40 introduces light from a light source 41 and irradiates the light receiving section 21 of the chip 20 with the light from its tip.
【０００９】以上の構成によって、光を受光部２１に入
射しながら光電変換効率や応答特性等の測定評価が行わ
れる。チップ２０が複数有る場合には、試料台１０を移
動させながら各チップ毎に測定評価がされる。With the above configuration, measurement and evaluation of photoelectric conversion efficiency, response characteristics, etc. are performed while light is incident on the light receiving section 21. When there are a plurality of chips 20, the measurement evaluation is performed for each chip while moving the sample table 10.
【００１０】[0010]
【発明が解決しようとする課題】ところで、受光素子２
０の受光部（受光面）２１は、受光素子の容量（キャパ
シタンス）値を左右する。その容量を低減して、素子を
より高速（高周波数）動作させるためには、受光面２１
はより小さくなる傾向にある。従って、受光面２１の径
は１５０μｍ程度から１００μｍ程度、５０μｍ程度、
３０μｍ程度と次第に小型化したものが開発されてい
る。By the way, the light receiving element 2
The zero light receiving portion (light receiving surface) 21 influences the capacitance value of the light receiving element. In order to reduce the capacitance and operate the device at higher speed (high frequency), the light receiving surface 21
Tends to be smaller. Therefore, the diameter of the light receiving surface 21 is about 150 μm to 100 μm, about 50 μm,
What is gradually reduced to about 30 μm is being developed.
【００１１】光ファイバ４０がシングルモードファイバ
の場合、光出射面において光束は約１０μｍ程度の径で
あり、出射面から離れるにつれ、その径は拡大する。素
子２０の受光面２１の径が１００μｍの場合には、受光
面内に光を照射するには光ファイバ４０の出射面は受光
面２１上２００〜３００μｍ程度までの高さに配置され
なければならない。すると、この高さでクラッドを含む
光ファイバの全径が横に張り出すことになる。When the optical fiber 40 is a single mode fiber, the light beam has a diameter of about 10 μm on the light emitting surface, and the diameter increases as the distance from the light emitting surface increases. When the diameter of the light receiving surface 21 of the element 20 is 100 μm, the emitting surface of the optical fiber 40 must be arranged on the light receiving surface 21 at a height of about 200 to 300 μm in order to irradiate light into the light receiving surface. .. Then, at this height, the entire diameter of the optical fiber including the clad extends laterally.
【００１２】従来の技術による評価装置においては、受
光部２１の面積が充分大きい場合には、光ファイバ４０
と電極針３０とは互いにぶつかることなく良好な測定が
可能である。In the evaluation device according to the prior art, when the area of the light receiving portion 21 is sufficiently large, the optical fiber 40 is used.
The electrode needle 30 and the electrode needle 30 do not hit each other, and good measurement is possible.
【００１３】しかし、光ファイバ４０の外形寸法は１２
５μｍ程度、金属針３０の先端部の直径は３０μｍ程度
であるために、素子が小型化されて受光部２１の径が１
５０μｍ以下になると光ファイバ４０と金属針３０とが
ぶつかるようになる。However, the outer dimension of the optical fiber 40 is 12
Since the diameter of the tip of the metal needle 30 is about 5 μm and the diameter of the tip of the metal needle 30 is about 30 μm, the element is downsized and the diameter of the light receiving unit 21 is 1 μm.
When the thickness is 50 μm or less, the optical fiber 40 and the metal needle 30 collide with each other.
【００１４】受光部２１が小さくなる程、受光部２１へ
の光入射とｐ電極２２との接続が困難になる。光ファイ
バ４０の先端部をテーパ先球状に加工したとしても、素
子２０の受光部２１の径が５０μｍ程度に小さくなると
やはり光入射と電極接続との両立が困難になる。As the light receiving portion 21 becomes smaller, it becomes more difficult for light to enter the light receiving portion 21 and to connect to the p-electrode 22. Even if the tip portion of the optical fiber 40 is processed into a tapered spherical tip, if the diameter of the light receiving portion 21 of the element 20 is reduced to about 50 μm, it is still difficult to achieve both light incidence and electrode connection.
【００１５】従って、従来の技術による受光素子の評価
装置は、使用上の制限が多くて使いにくくなっており、
新しい構成の評価装置が望まれている。本発明の目的
は、使用上の制限が少なく、使いやすくて種々の範囲の
受光素子に適用できる光・電気プローブを提供すること
にある。Therefore, the conventional light-receiving element evaluation device is difficult to use due to many restrictions on use.
A new configuration of the evaluation device is desired. An object of the present invention is to provide an optical / electrical probe which has few restrictions on use, is easy to use, and can be applied to light receiving elements in various ranges.
【００１６】[0016]
【課題を解決するための手段】本発明による光・電気プ
ローブは、光導波路と、該光導波路に隣接 して一体に
設けられた電極部とを備え、該光導波路と電極部とは、
光素子の電極に該電極部が接触した状態で、該光導波路
と光素子とが光結合する関係を有する。An optical / electrical probe according to the present invention comprises an optical waveguide and an electrode portion integrally provided adjacent to the optical waveguide, and the optical waveguide and the electrode portion are
The optical waveguide and the optical element are in a relationship of being optically coupled with each other in a state where the electrode portion is in contact with the electrode of the optical element.
【００１７】[0017]
【作用】光導波路と電極部とが一体化されているため、
光導波路を光素子と光結合させた状態で、光導波路に一
体に隣接配置した電極部が光素子の電極と接続するよう
に配置できる。[Operation] Since the optical waveguide and the electrode part are integrated,
In a state where the optical waveguide is optically coupled to the optical element, the electrode portion integrally adjacent to the optical waveguide can be arranged so as to be connected to the electrode of the optical element.
【００１８】[0018]
【実施例】以下、図１〜図６を参照して、受光素子の評
価装置の実施例について説明する。なお、図７の参照番
号と同じ番号のものは同一物を示す。試料台１０や直流
電源３１および電流測定器３２については図１〜図５で
は図示しないが、実質的に同一のものが使用できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an evaluation device for a light receiving element will be described below with reference to FIGS. The same reference numerals as those in FIG. 7 indicate the same items. Although not shown in FIGS. 1 to 5, the sample table 10, the DC power supply 31, and the current measuring device 32 can be substantially the same.
【００１９】図１〜図３は、評価装置の測定プローブの
第１の実施例であり、図１が装置の側面図、図２が図１
のＡ方向から見た平面図、図３が図１のＢ方向から見た
図である。1 to 3 show a first embodiment of a measuring probe of an evaluation apparatus, FIG. 1 is a side view of the apparatus, and FIG. 2 is FIG.
3 is a plan view seen from the direction A, and FIG. 3 is a view seen from the direction B in FIG.
【００２０】第１の実施例においては、光導入部として
は、ガラスもしくはＬｉＮｂＯ3 （ニオブ酸リチウム）
基板４２にチタンの拡散を行って高屈折率領域を形成
し、光導波路４３を形成している。チタンの拡散層によ
る光導波路４３の断面は図３に示すようなものである。
その幅と深さは、それぞれ約８〜１０μｍと６μｍ程度
である。In the first embodiment, the light introducing portion is made of glass or LiNbO 3 (lithium niobate).
Titanium is diffused in the substrate 42 to form a high refractive index region, and the optical waveguide 43 is formed. The cross section of the optical waveguide 43 formed by the titanium diffusion layer is as shown in FIG.
The width and depth are about 8 to 10 μm and 6 μm, respectively.
【００２１】また、光導波路４３に近い基板４２の表面
には、酸化シリコン膜３３を形成する。酸化シリコン膜
３３の表面に厚みが約３〜５μｍのＡｕ（金）によるコ
プレーナストリップ線路３４を高周波電気信号線路とし
て形成する。密着性を増やすためには、酸化シリコン膜
３３との間にＴｉ層を介在させるのがよい。A silicon oxide film 33 is formed on the surface of the substrate 42 near the optical waveguide 43. A coplanar strip line 34 of Au (gold) having a thickness of about 3 to 5 μm is formed as a high frequency electric signal line on the surface of the silicon oxide film 33. In order to increase the adhesiveness, it is preferable to interpose a Ti layer with the silicon oxide film 33.
【００２２】図２の平面図にストリップ線路３４のパタ
ーンが示される。本実施例のストリップ線路３４はその
幅が約９μｍである。なお、同時に接地線として、コプ
レーナグランドプレート３５が信号線路３４から約１５
μｍ程度離れて形成される。The pattern of the strip line 34 is shown in the plan view of FIG. The strip line 34 of this embodiment has a width of about 9 μm. At the same time, the coplanar ground plate 35 is connected to the signal line 34 from the signal line 34 as a ground line.
They are formed apart by about μm.
【００２３】信号ストリップ線路３４の先端部の上に受
光素子２０のｐ電極２２と接触するための突起状の電極
すなわち、バンプ電極３６が形成される。バンプ電極３
６の材料はＡｕであり、たとえばその厚みは約１０〜１
５μｍで約９μｍ角の寸法である。信号ストリップ線路
３４の他端は信号電流測定器に接続される。なお、受光
素子２０の表面にｎ電極が形成される場合には、グラン
ドプレート３５の上にもｎ電極と対応する位置に同様な
バンプ電極を形成してもよい。A bump-shaped electrode, that is, a bump-shaped electrode 36 for contacting the p-electrode 22 of the light-receiving element 20 is formed on the tip of the signal strip line 34. Bump electrode 3
The material of No. 6 is Au, for example, its thickness is about 10-1.
The size is about 9 μm square at 5 μm. The other end of the signal strip line 34 is connected to a signal current measuring device. When the n-electrode is formed on the surface of the light receiving element 20, a similar bump electrode may be formed on the ground plate 35 at a position corresponding to the n-electrode.
【００２４】光導波路４３の一端は、コア径が７〜９μ
ｍ（高速径約１０μｍ）程度の光ファイバ４４と接続さ
れ、光源より光が導入される。光導波路４３の他端側の
基板４２の面は、光導波路４３の方向に対し約４０度の
角度で研磨される。One end of the optical waveguide 43 has a core diameter of 7 to 9 μm.
It is connected to an optical fiber 44 having a diameter of about m (high-speed diameter of about 10 μm), and light is introduced from a light source. The surface of the substrate 42 on the other end side of the optical waveguide 43 is polished at an angle of about 40 degrees with respect to the direction of the optical waveguide 43.
【００２５】入射角を９０−４０＝５０度位にすると、
入射光をほぼ全反射させることができる。なお、入射角
は厳密なものではない。反射率を高くするには研磨面に
は反射膜４５が形成される。反射膜４５の材料は、金属
あるいは誘電体多層膜が用いられる。When the incident angle is set to about 90-40 = 50 degrees,
The incident light can be almost totally reflected. The incident angle is not exact. To increase the reflectance, the reflective film 45 is formed on the polished surface. As the material of the reflection film 45, a metal or dielectric multilayer film is used.
【００２６】バンプ電極３６の先端近傍の光導波路４３
の先端部付近に光出射窓４６が設けられる。光ファイバ
４４から光導波路４３を経由してきた光は反射膜４５で
下方に反射して光出射窓４６から受光部２１に入射す
る。Optical waveguide 43 near the tip of bump electrode 36
A light exit window 46 is provided near the tip of the. The light that has passed through the optical waveguide 43 from the optical fiber 44 is reflected downward by the reflection film 45 and enters the light receiving portion 21 through the light emission window 46.
【００２７】一例として、受光素子２０は、ｎ+ 型にド
ープした約５００μｍ厚のＩｎＰ（インジュウム燐）基
板２４上にバンドギャップの狭いＩｎＧａＡｓ（インジ
ュウムガリウム砒素）による約１μｍ厚の光吸収層２５
を形成し、さらにその上にｎ型のＩｎＰ層２６を数μｍ
の厚みで形成し、その一部をｐ+ 型にドープして受光部
２１を形成し、その周囲にｐ電極２２を形成してなる。
なお、受光素子は、本例に限らず、他のプレーナ構造の
受光素子であっても測定評価できる。As an example, the light-receiving element 20 has a light absorption layer 25 of about 1 μm thick made of InGaAs (indium gallium arsenide) having a narrow band gap on an n + -type InP (indium phosphide) substrate 24 of about 500 μm thickness.
And an n-type InP layer 26 of several μm
And a part thereof is doped to be p + -type to form a light receiving portion 21, and a p electrode 22 is formed around the light receiving portion 21.
The light receiving element is not limited to this example, and other light receiving elements having a planar structure can be measured and evaluated.
【００２８】図１に示すように、測定プローブを図示し
ないマニュピレータを用いて、バンプ電極３６が受光素
子２０のｐ電極２２と接触しつつ、同時に光出射窓４６
から光が受光部２１に入射するように、位置合わせをし
た後、受光素子の光電変換効率や応答特性等の測定評価
が行われる。As shown in FIG. 1, by using a manipulator (not shown) as the measurement probe, the bump electrode 36 is in contact with the p-electrode 22 of the light receiving element 20, and at the same time, the light emitting window 46.
After the alignment is performed so that the light enters the light receiving portion 21, the measurement and evaluation of the photoelectric conversion efficiency and the response characteristic of the light receiving element are performed.
【００２９】上記の実施例の測定プローブを有する評価
装置では、受光部の径が３０μｍ程度以下の受光素子で
１０ＧＨｚ程度までの応答周波数の測定評価が可能であ
る。なお、上記した各寸法の数値や材料の種類は本実施
例の例であり、本発明の装置は、それらに限定されるも
のではない。説明したものと同様な作用効果を奏する他
の数値ならびに材料を選択できることは言うまでもな
い。In the evaluation device having the measurement probe of the above-mentioned embodiment, it is possible to measure and evaluate the response frequency up to about 10 GHz with the light receiving element having the light receiving portion having a diameter of about 30 μm or less. The numerical values of the respective dimensions and the types of materials described above are examples of this embodiment, and the device of the present invention is not limited to them. It goes without saying that other numerical values and materials can be selected that have the same effects as those described.
【００３０】図４に第２の実施例の構成を示す。第２の
実施例では、第１の実施例の基板４２とストリップ線路
３４を使用せず、代わりに、光導波路として光ファイバ
４７そのものを利用し、信号線路として光ファイバ４７
に結合した金属スリーブ３７を用いる。FIG. 4 shows the configuration of the second embodiment. The second embodiment does not use the substrate 42 and the strip line 34 of the first embodiment, but instead uses the optical fiber 47 itself as an optical waveguide and the optical fiber 47 as a signal line.
The metal sleeve 37 connected to is used.
【００３１】この第２の実施例は、第１の実施例に比
べ、構造が簡単で、基板４２を作ることとストリップ線
路の形成工程が不要であるという利点を有する。代わり
に第１の実施例の方は、第２の実施例に比べ、より高周
波特性に優れる。The second embodiment has the advantages that the structure is simpler than that of the first embodiment and that the substrate 42 and the strip line forming step are not required. Instead, the first embodiment is more excellent in high frequency characteristics than the second embodiment.
【００３２】第２の実施例においては、光ファイバ４７
の先端面がコア４８の方向に対し約４０度に斜め研磨さ
れ、第１の実施例と同様な反射膜４９が研磨面に形成さ
れる。コア４８を通過した光は反射膜４９で反射して光
出射部４６を透過して受光部２１に入射する。このた
め、受光素子上の光束の断面形状は楕円形となる。In the second embodiment, the optical fiber 47
The front end surface of is polished at an angle of about 40 degrees with respect to the direction of the core 48, and a reflective film 49 similar to that of the first embodiment is formed on the polished surface. The light passing through the core 48 is reflected by the reflection film 49, passes through the light emitting portion 46, and enters the light receiving portion 21. Therefore, the cross-sectional shape of the light flux on the light receiving element is elliptical.
【００３３】金属スリープ３７は導電体であり、その中
央部に貫通孔３８があけられ、その中に光ファイバ４７
が挿入され、光ファイバ４７の先端部が貫通孔３８から
少し覗く位置で固定される。The metal sleep 37 is a conductor, and a through hole 38 is formed in the center thereof, and an optical fiber 47 is provided therein.
Is inserted, and the tip of the optical fiber 47 is fixed at a position where it is slightly seen through the through hole 38.
【００３４】金属スリーブ３７の一つの角３９が研磨さ
れて突起状電極を形成しており、その角３９は光が受光
部２１に入射するように光ファイバ４７を位置決めした
ときに図示の如くｐ電極２２と面接触するように配置さ
れる。One corner 39 of the metal sleeve 37 is polished to form a protruding electrode, and the corner 39 is p as shown when the optical fiber 47 is positioned so that the light enters the light receiving portion 21. It is arranged so as to make surface contact with the electrode 22.
【００３５】金属スリーブ３７が受光素子２０のｐ電極
２２と接触しつつ、同時に反射膜４９で反射した光が光
出射窓４６を通って受光部２１に入射するような位置に
測定プローブを図示しないマニュピレータで位置合わせ
をした後、受光素子の光電変換効率や応答特性等の測定
評価が行われる。The measurement probe is not shown at a position where the metal sleeve 37 is in contact with the p-electrode 22 of the light receiving element 20 and at the same time the light reflected by the reflection film 49 is incident on the light receiving portion 21 through the light emission window 46. After alignment with the manipulator, measurement and evaluation of photoelectric conversion efficiency and response characteristics of the light receiving element are performed.
【００３６】次に、第３の実施例を図５と図６を参照し
て説明する。図５は側面図で、図６は図５のＣ方向から
見た平面図である。前述した第１と第２の実施例のもの
は、いずれも測定プローブが受光素子２０の面に対して
斜め方向に傾斜して配置され、反射面によって光の進行
方向を変えて受光面２１に入射せしめる構造であった
が、第３の実施例のものは、反射面を使用せず、光導波
路が受光部２１に対しほぼ垂直に配置される。反射面が
用いられないこと以外は第１図の実施例と同様な構造で
あるので、以下、簡単に説明する。Next, a third embodiment will be described with reference to FIGS. 5 is a side view, and FIG. 6 is a plan view seen from the direction C in FIG. In both the first and second embodiments described above, the measurement probe is arranged obliquely with respect to the surface of the light receiving element 20, and the light traveling direction is changed by the reflecting surface to form the light receiving surface 21. Although the structure is such that the light is incident, the third embodiment does not use a reflecting surface, and the optical waveguide is arranged substantially perpendicular to the light receiving portion 21. The structure is the same as that of the embodiment shown in FIG. 1 except that the reflecting surface is not used. Therefore, a brief description will be given below.
【００３７】第３の実施例においては、第１の実施例と
同様にガラスもしくはＬｉＮｂＯ3 基板５０にチタンの
拡散を行って光導波路５１を形成している。また、光導
波路５１に近い基板５０の表面には、低屈折率の透明絶
縁媒質である酸化シリコン膜５２を介し、その表面にコ
プレーナストリップ線路５３を高周波電気信号線路とし
て形成する。In the third embodiment, as in the first embodiment, the optical waveguide 51 is formed by diffusing titanium into the glass or LiNbO 3 substrate 50. Further, a coplanar strip line 53 is formed as a high frequency electric signal line on the surface of the substrate 50 near the optical waveguide 51 with a silicon oxide film 52 which is a transparent insulating medium having a low refractive index interposed.
【００３８】図６の平面図にストリップ線路５３のパタ
ーンが示される。なお、ストリップ線路５３は基板５０
の角で曲げられて、その上にバンプ電極５４が形成され
る。このバンプ電極５４が形成されるストリップ線路の
曲がり部分の長さは高周波特性に影響を与えないために
は０．２ｍｍ程度以下にするのが好ましい。A pattern of the strip line 53 is shown in the plan view of FIG. The strip line 53 is the substrate 50.
The bump electrode 54 is formed on the bump electrode 54. The length of the bent portion of the strip line on which the bump electrode 54 is formed is preferably about 0.2 mm or less in order not to affect the high frequency characteristics.
【００３９】光導波路５１の一端は、光ファイバ４４と
接続され、光源より光が導入される。光導波路５１の素
子側の面は光導波路５１の方向に対し垂直になってお
り、光はそのまま光出射窓５５を透過して受光部２１に
入射する。One end of the optical waveguide 51 is connected to the optical fiber 44, and light is introduced from the light source. The element-side surface of the optical waveguide 51 is perpendicular to the direction of the optical waveguide 51, and the light passes through the light emitting window 55 as it is and enters the light receiving portion 21.
【００４０】なお、第３の実施例においては、反射膜が
不要であり、斜め研磨も不要である等の点で第１の実施
例よりも測定プローブの製造が簡単である。以上個別半
導体受光素子の評価装置を例に説明したが、本発明は、
その例に限るものではなく、たとえば、光集積回路中の
受光素子の評価等に用いることもできる。半導体レー
ザ、ＬＥＤのような発光素子の評価にも適用可能であ
る。その場合には、発光素子からの光を光導波路を介し
て受けて光信号を検出する測定器に与えればよい。すな
わち、光電変換素子、光導電素子を含む光と電気信号の
両方を同時に利用するオプトエレクトロニクス素子の評
価装置として適用もできる。The third embodiment is simpler in manufacturing the measuring probe than the first embodiment in that the reflection film is unnecessary and the oblique polishing is unnecessary. Although the evaluation device for the individual semiconductor light receiving element has been described above as an example, the present invention is
The present invention is not limited to this example, and can be used, for example, for evaluation of a light receiving element in an optical integrated circuit. It is also applicable to evaluation of light emitting elements such as semiconductor lasers and LEDs. In that case, the light from the light emitting element may be given to the measuring device which receives the light via the optical waveguide and detects the optical signal. That is, it can be applied as an evaluation device for an optoelectronic element that simultaneously uses both light and an electric signal, including a photoelectric conversion element and a photoconductive element.
【００４１】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。たとえば、
種々の変更、改良、組み合わせ等が可能なことは当業者
に自明であろう。The present invention has been described above with reference to the embodiments.
The present invention is not limited to these. For example,
It will be apparent to those skilled in the art that various modifications, improvements, combinations and the like can be made.
【００４２】[0042]
【発明の効果】以上説明したように、本発明によれば、
光導波路部材と導電路とを一体に形成したことにより、
以下のような優れた効果を奏する。As described above, according to the present invention,
By integrally forming the optical waveguide member and the conductive path,
It has the following excellent effects.
【００４３】従来、電極針用と光ファイバ用とにそれぞ
れ個別に必要であった位置合わせマニュピュレータが一
つですむことになる。従って、構造が簡単で使いやす
く、使用上の制限が少なく、位置合わせの手間も減少す
る。Conventionally, only one positioning manipulator which has been separately required for the electrode needle and the optical fiber is required. Therefore, the structure is simple and easy to use, there are few restrictions on use, and the labor for alignment is reduced.
【００４４】また、選択的に得られる効果として、受光
素子等の電極との接続用電極（突起電極）と、光入出力
部とが非常に接近して構成できるために、光素子の小型
化による小さな受光面、出射面の素子に対応できること
と、ストリップ線路を採用できるために、従来の電極針
のような構造よりもより高周波特性が改善できることが
あげられる。As an effect that can be selectively obtained, the electrode for connection with the electrode of the light receiving element or the like (projection electrode) and the light input / output portion can be formed very close to each other, so that the size of the optical element can be reduced. Due to the fact that it is possible to deal with small elements of the light-receiving surface and the light-emitting surface, and because the strip line can be adopted, the high frequency characteristics can be improved more than the structure like the conventional electrode needle.
【図１】本発明による受光素子の評価装置の第１の実施
例の側面図である。FIG. 1 is a side view of a first embodiment of a light receiving element evaluation apparatus according to the present invention.
【図２】図１のＡ方向からみた平面図である。FIG. 2 is a plan view seen from the direction A in FIG.
【図３】図１のＢ方向からみた断面図である。FIG. 3 is a cross-sectional view seen from the direction B in FIG.
【図４】本発明による受光素子の評価装置の第２の実施
例の側面図である。FIG. 4 is a side view of a second embodiment of the light-receiving element evaluation device according to the present invention.
【図５】本発明による受光素子の評価装置の第３の実施
例の側面図である。FIG. 5 is a side view of a third embodiment of the light-receiving element evaluation device according to the present invention.
【図６】図５のＣ方向からみた平面図である。6 is a plan view seen from the direction C in FIG.
【図７】従来の技術による受光素子の評価装置の外観図
である。FIG. 7 is an external view of a conventional light receiving element evaluation apparatus.
１０・・・・・・・試料台 ２０・・・・・・・受光素子 ２１・・・・・・・受光部（受光面） ２２・・・・・・・ｐ電極 ２３・・・・・・・ｎ電極 ２４・・・・・・・ｎ+ 型層 ２５・・・・・・・光吸収層 ２６・・・・・・・ｎ型層 ３０・・・・・・・金属針 ３１・・・・・・・電源 ３２・・・・・・・電流検出器 ３３・・・・・・・酸化シリコン層 ３４，５３・・・・ストリップ線路 ３５・・・・・・・グランドプレート ３６，５４・・・・バンプ電極 ３７・・・・・・・金属スリーブ ４０，４４，４７・・光ファイバ ４１・・・・・・・光源 ４２，５０・・・・基板 ４３，４８，５１・・光導波路 ４５，４９・・・・反射膜 ４６，５５・・・・光出射窓10 --- Sample stand 20 --- Light-receiving element 21 --- Light-receiving part (light-receiving surface) 22 --- P electrode 23 --- ..N electrode 24 ..... n + type layer 25 ........ light absorbing layer 26 ........ n type layer 30 ........ metal needle 31 ..・ ・ ・ ・ Power source 32 ・ ・ ・ ・ Current detector 33 ・ ・ ・ ・ ・ ・ Silicon oxide layer 34, 53 ・ ・ ・ ・ Strip line 35 ・ ・ ・ ・ ・ ・ Grand plate 36, 54 ... Bump electrode 37 ... Metal sleeve 40, 44, 47 ... Optical fiber 41 ... Light source 42, 50 ... Substrate 43, 48, 51 ... Optical waveguide 45, 49 ... Reflective film 46, 55 ... Light output window
Claims (3)
３７，３９，５３，５４）とを備え、 該光導波路と電極部とは、光素子の電極に該電極部が接
触した状態で、該光導波路と光素子とが光結合する関係
を有する光・電気プローブ。1. An optical waveguide (43, 48, 51) and an electrode portion (34-) integrally provided adjacent to the optical waveguide.
37, 39, 53, 54), and the optical waveguide and the electrode section have a relationship in which the optical waveguide and the optical element are optically coupled in a state where the electrode section is in contact with the electrode of the optical element. -Electric probe.
導波路を通る光を反射する光反射面（４５，４９）を有
する請求項１記載の光・電気プローブ。2. The optical / electrical probe according to claim 1, wherein the optical waveguide further has a light reflection surface (45, 49) for reflecting light passing through the optical waveguide at a tip end portion thereof.
て、前記電極部を光素子の電極と接触させて光素子にバ
イアスを供給し、前記光導波路を介して光素子の光の入
力／出力を行なう光素子の評価方法。3. The optical / electrical probe according to claim 1, wherein the electrode portion is brought into contact with an electrode of an optical element to supply a bias to the optical element, and light of the optical element is input through the optical waveguide. / Method of evaluating optical element for output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3344591A JPH05175288A (en) | 1991-12-26 | 1991-12-26 | Optical/electrical probe and method for evaluating optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3344591A JPH05175288A (en) | 1991-12-26 | 1991-12-26 | Optical/electrical probe and method for evaluating optical element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175288A true JPH05175288A (en) | 1993-07-13 |
Family
ID=18370457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3344591A Withdrawn JPH05175288A (en) | 1991-12-26 | 1991-12-26 | Optical/electrical probe and method for evaluating optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175288A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005098460A2 (en) | 2004-04-01 | 2005-10-20 | Wentworth Laboratories, Inc. | Double side probing of semiconductor devices |
| JP2017058211A (en) * | 2015-09-15 | 2017-03-23 | 株式会社島津製作所 | Light detection device |
| JP2021063782A (en) * | 2019-10-17 | 2021-04-22 | 株式会社日本マイクロニクス | Inspection probe, method for manufacturing inspection probe, and inspection probe |
-
1991
- 1991-12-26 JP JP3344591A patent/JPH05175288A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005098460A2 (en) | 2004-04-01 | 2005-10-20 | Wentworth Laboratories, Inc. | Double side probing of semiconductor devices |
| EP1740963A2 (en) * | 2004-04-01 | 2007-01-10 | Wentworth Laboratories, Inc. | Double side probing of semiconductor devices |
| EP1740963A4 (en) * | 2004-04-01 | 2010-12-22 | Wentworth Lab Inc | Double side probing of semiconductor devices |
| JP2017058211A (en) * | 2015-09-15 | 2017-03-23 | 株式会社島津製作所 | Light detection device |
| JP2021063782A (en) * | 2019-10-17 | 2021-04-22 | 株式会社日本マイクロニクス | Inspection probe, method for manufacturing inspection probe, and inspection probe |
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