JPH05175160A - Plasma processing device - Google Patents
Plasma processing deviceInfo
- Publication number
- JPH05175160A JPH05175160A JP35593691A JP35593691A JPH05175160A JP H05175160 A JPH05175160 A JP H05175160A JP 35593691 A JP35593691 A JP 35593691A JP 35593691 A JP35593691 A JP 35593691A JP H05175160 A JPH05175160 A JP H05175160A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cooling medium
- passage
- uniformly
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は低温エッチング等に用い
るプラズマ処理装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus used for low temperature etching and the like.
【０００２】[0002]
【従来の技術】従来のプラズマ処理装置を用いたエッチ
ング処理は、チャンバー内を減圧した後反応ガスをチャ
ンバー内に導入するとともにチャンバー内にプラズマを
発生せしめ、このプラズマで活性化した反応ガスにより
ウェハ表面をエッチングするようにしている。2. Description of the Related Art In a conventional etching process using a plasma processing apparatus, after depressurizing the chamber, a reaction gas is introduced into the chamber and plasma is generated in the chamber. The surface is etched.
【０００３】そして、反応ガスとしてフロンガスが使用
されるが、最近ではフロンガス規制によりオゾン破壊係
数の小さな代替フロンを用いる傾向にある。しかしなが
ら、この代替フロンも使用できなくなることが予想さ
れ、フロンガス以外の検討が待たれている。現在塩素ガ
スを用いたエッチングが有効とみなされているが、より
広いプロセスマージンを得るためには−６０℃以下の温
度で行なうと高精度に且つ効率良く処理ができることが
分かっている。Freon gas is used as the reaction gas, but recently, due to the regulation of freon gas, there is a tendency to use alternative freon having a small ozone depletion coefficient. However, it is expected that this alternative CFC will also become unusable, and investigations other than CFC gas are awaited. At present, etching using chlorine gas is considered to be effective, but it has been found that in order to obtain a wider process margin, the treatment can be performed with high accuracy and efficiency if performed at a temperature of −60 ° C. or lower.
【０００４】[0004]
【発明が解決しようとする課題】上述したようにプラズ
マ処理装置を用いたエッチング処理は低温化の傾向にあ
るが、均一にエッチングを行なうにはウェハ全面を均一
に冷却しなければならなず、従来装置にあっては冷却温
度のバラツキが生じやすい。またエッチング処理中に反
応熱によりウェハの温度が高くなった場合、従来装置に
あっては有効な対策が講じられていない。As described above, the etching process using the plasma processing apparatus tends to lower the temperature. However, in order to perform uniform etching, the entire surface of the wafer must be cooled uniformly. In the conventional device, variations in cooling temperature are likely to occur. Further, when the temperature of the wafer becomes high due to the reaction heat during the etching process, effective measures have not been taken in the conventional apparatus.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決すべく本
発明は、プラズマ処理装置のウェハ載置テーブル内に第
１の冷却媒体通路及び第２の冷却媒体通路を形成し、第
２の冷却媒体通路についてはテーブル表面のウェハ直下
に開口せしめた。In order to solve the above problems, the present invention provides a second cooling medium passage by forming a first cooling medium passage and a second cooling medium passage in a wafer mounting table of a plasma processing apparatus. The medium passage was opened just below the wafer on the table surface.
【０００６】[0006]
【作用】テーブル内に形成した第１の冷却媒体通路でテ
ーブル全体を均一に冷却し、テーブル表面から噴出する
ヘリウムガス等により反応熱によって加熱されたウェハ
との熱交換効率を向上させる。The first cooling medium passage formed in the table uniformly cools the entire table to improve the efficiency of heat exchange with the wafer heated by the reaction heat by the helium gas or the like ejected from the surface of the table.
【０００７】[0007]
【実施例】以下に本発明の実施例を添付図面に基づいて
説明する。ここで、図１は本発明に係るプラズマ処理装
置としての電子のサイクロトロン運動を利用したＥＣＲ
エッチング装置の概略構成図であり、この装置は合成石
英等からなる反応チャンバー１を２．４５ＧＨzのマイ
クロ波発振器２につながる導波管３内に収納し、導波管
３の周囲には磁界発生コイル４を配置し、更に反応チャ
ンバー１内を真空ポンプ５につなげるとともに反応チャ
ンバー１内の下方に１３．５６ＭＨz等の高周波発振器
に接続されるウェハＷの載置テーブル６を設けている。Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is an ECR using a cyclotron motion of electrons as a plasma processing apparatus according to the present invention.
FIG. 1 is a schematic configuration diagram of an etching apparatus, in which a reaction chamber 1 made of synthetic quartz or the like is housed in a waveguide 3 connected to a 2.45 GHz microwave oscillator 2 and a magnetic field is generated around the waveguide 3. A coil 4 is arranged, and the inside of the reaction chamber 1 is connected to a vacuum pump 5, and a mounting table 6 for a wafer W connected to a high-frequency oscillator such as 13.56 MHz is provided below the inside of the reaction chamber 1.
【０００８】載置テーブル６は図２及び図３に示すよう
にベース７上に固定され、このベース７には上下方向の
貫通孔８、水平方向の貫通孔９，１０，１１，１２を穿
設し、上下方向の貫通孔８の下端開口は底蓋１３で閉塞
している。後述するように、ウェハ載置テーブル６が冷
却されることから空間１３ａ内に結露が発生する。この
ため水分を真空ポンプ５につながる前記水平方向の貫通
孔９に集めるようにしている。The mounting table 6 is fixed on a base 7 as shown in FIGS. 2 and 3, and a vertical through hole 8 and horizontal through holes 9, 10, 11, 12 are drilled in the base 7. The bottom end opening of the through hole 8 in the vertical direction is closed by the bottom lid 13. As will be described later, since the wafer mounting table 6 is cooled, dew condensation occurs in the space 13a. For this reason, water is collected in the horizontal through hole 9 connected to the vacuum pump 5.
【０００９】また、水平方向の貫通孔１０にはフッ素化
熱媒体液等の第１の冷却媒体導入管１４を挿通し、貫通
孔１１には１３．５６ＭＨzの高周波を印加する同軸ケ
ーブル１５を挿通し、更に貫通孔１２には第２の冷却媒
体導入管１６を挿通している。Further, a first cooling medium introducing pipe 14 such as a fluorinated heat medium liquid is inserted into the horizontal through hole 10, and a coaxial cable 15 for applying a high frequency of 13.56 MHz is inserted into the through hole 11. Further, the second cooling medium introducing pipe 16 is inserted through the through hole 12.
【００１０】ベース７上に固定されたウェハ載置テーブ
ル６は支持ブロック１７上に前記同軸ケーブル１５の上
端部が結合される下部電極１８を設け、この下部電極１
８の上にセラミック等の誘電体からなる静電チャック板
１９を固設し、これら下部電極１８と静電チャック板１
９を円筒カバー２０内に収めるとともに下部電極１８と
静電チャック板１９との間に前記第１の冷却媒体導入管
１４とつながる第１の冷却媒体通路２１を形成してい
る。The wafer mounting table 6 fixed on the base 7 is provided with a lower electrode 18 on the support block 17 to which the upper end of the coaxial cable 15 is connected.
8, an electrostatic chuck plate 19 made of a dielectric material such as ceramic is fixedly provided, and these lower electrodes 18 and electrostatic chuck plate 1 are provided.
The first cooling medium passage 21 is formed between the lower electrode 18 and the electrostatic chuck plate 19 and is connected to the first cooling medium introducing pipe 14 while accommodating 9 in the cylindrical cover 20.
【００１１】また、静電チャック板１９内にはヘリウム
ガス等の第２の冷却媒体通路２２が形成され、この第２
の冷却媒体通路２２の一端は図３に示すように支持ブロ
ック１７に穿設した通路１７ａを介して前記第２の冷却
媒体導入管１６につながり、更に第２の冷却媒体通路２
２の他端は静電チャック板１９の上面に形成した溝部１
９ａに開口している。A second cooling medium passage 22 such as helium gas is formed in the electrostatic chuck plate 19.
3, one end of the cooling medium passage 22 is connected to the second cooling medium introducing pipe 16 via a passage 17a formed in the support block 17, and the second cooling medium passage 2
The other end of 2 is a groove portion 1 formed on the upper surface of the electrostatic chuck plate 19.
It opens at 9a.
【００１２】一方、前記底蓋１３の上面中央にはシリン
ダユニット２３を設置し、このシリンダユニット２３の
ロッド２４上端に水平方向のアーム２５を取り付け、こ
のアーム２５にウェハホルダ２６を取り付けている。こ
のウェハホルダ２６は前記円筒カバー２０の外周面にそ
の内周面が摺接する円筒部２６ａの上端部に内方に突出
する環状部２６ｂを設け、この環状部２６ｂの内端下面
にウェハ押え部２６ｃを形成し、環状部２６ｂの下面か
ら内方に向かってウェハＷの下面周縁を支持する支持部
２６ｄを複数個設けている。そして、前記円筒カバー２
０の上面にはウェハホルダ２６が下降した際に支持部２
６ｄが入り込む凹部２０ａを形成している。On the other hand, a cylinder unit 23 is installed in the center of the upper surface of the bottom lid 13, a horizontal arm 25 is attached to the upper end of a rod 24 of the cylinder unit 23, and a wafer holder 26 is attached to the arm 25. The wafer holder 26 is provided with an annular portion 26b projecting inward at the upper end of a cylindrical portion 26a with which the inner peripheral surface of the cylindrical cover 20 is in sliding contact with the outer peripheral surface of the cylindrical cover 20. And a plurality of supporting portions 26d for supporting the lower surface peripheral edge of the wafer W are provided inward from the lower surface of the annular portion 26b. And the cylindrical cover 2
When the wafer holder 26 is lowered, the supporting portion 2
A recess 20a into which 6d is inserted is formed.
【００１３】以上においてウェハＷ表面にエッチング処
理を施すには、シリンダユニット２３のロッド２４を突
出せしめ、ウェハホルダ２６を図２に示すように上昇せ
しめ、このウェハホルダ２６の支持部２６ｄ上にウェハ
Ｗを載置する。次いで、シリンダユニット２３のロッド
２４を引き込み、ウェハホルダ２６を下降せしめてウェ
ハＷを静電チャック板１９の上面に載置し、ウェハＷを
静電的に吸着するとともにウェハＷをウェハホルダ２６
の押え部２６ｃにて押え込む。In order to perform the etching process on the surface of the wafer W, the rod 24 of the cylinder unit 23 is projected and the wafer holder 26 is raised as shown in FIG. 2, and the wafer W is placed on the supporting portion 26d of the wafer holder 26. Place it. Next, the rod 24 of the cylinder unit 23 is pulled in, the wafer holder 26 is lowered, and the wafer W is placed on the upper surface of the electrostatic chuck plate 19. The wafer W is electrostatically attracted and the wafer W is held by the wafer holder 26.
It is pressed down by the pressing portion 26c of.
【００１４】而る後、反応チャンバー１内を減圧した後
反応ガスをチャンバー１内に導入し、チャンバーに２．
４５ＧＨzのマイクロ波を印加し、コイル４にて共鳴磁
場を作ることにより電子サイクロトロン運動を起こし、
高密度のプラズマを発生せしめ、このプラズマで活性化
した反応ガスによりウェハＷ表面をエッチングする。
尚、この実施例にあっては、ウェハＷにもマイクロ波と
は独立して１３．５６ＭＨzの高周波を印加しバイアス
電圧のコントロールを任意に行なえるようにしている。After that, the inside of the reaction chamber 1 is depressurized, and then the reaction gas is introduced into the chamber 1.
A 45 GHz microwave is applied to generate a resonance magnetic field in the coil 4, thereby causing an electron cyclotron motion,
High density plasma is generated, and the surface of the wafer W is etched by the reaction gas activated by this plasma.
In this embodiment, a high frequency of 13.56 MHz is applied to the wafer W independently of the microwave so that the bias voltage can be arbitrarily controlled.
【００１５】[0015]
【発明の効果】以上に説明したように本発明によれば、
プラズマ処理装置のウェハ載置テーブル内に第１の冷却
媒体通路及び第２の冷却媒体通路を形成し、第２の冷却
媒体通路についてはテーブル表面のウェハ直下に開口せ
しめ、第１の冷却媒体通路でテーブル全体を均一に冷却
し、テーブル表面から噴出する第２の冷却媒体により反
応熱によって加熱されたウェハとの熱交換効率を向上さ
せるようにしたので、ウェハ表面を均一で高精度に効率
良く処理することができるAs described above, according to the present invention,
A first cooling medium passage and a second cooling medium passage are formed in the wafer mounting table of the plasma processing apparatus, and the second cooling medium passage is opened immediately below the wafer on the surface of the table. Since the entire table is uniformly cooled with the second cooling medium ejected from the table surface to improve the heat exchange efficiency with the wafer heated by the reaction heat, the wafer surface is uniformly and efficiently with high accuracy. Can be processed
【図１】本発明に係るプラズマ処理装置の概略構成図FIG. 1 is a schematic configuration diagram of a plasma processing apparatus according to the present invention.
【図２】同プラズマ処理装置のテーブルの断面図FIG. 2 is a sectional view of a table of the plasma processing apparatus.
【図３】同プラズマ処理装置のテーブルの一部を示す断
面図FIG. 3 is a sectional view showing a part of a table of the plasma processing apparatus.
１…反応チャンバー、６…ウェハ載置テーブル、１１…
ベース、１４…第１の冷却媒体導入管、１５…同軸ケー
ブル、１６…第２の冷却媒体導入管、１８…下部電極、
１９…静電チャック板、２１…第１の冷却媒体通路、２
２…第２の冷却媒体通路、２６…ウェハホルダ、Ｗ…ウ
ェハ。1 ... Reaction chamber, 6 ... Wafer mounting table, 11 ...
Base, 14 ... First cooling medium introducing pipe, 15 ... Coaxial cable, 16 ... Second cooling medium introducing pipe, 18 ... Lower electrode,
19 ... Electrostatic chuck plate, 21 ... First cooling medium passage, 2
2 ... 2nd cooling medium passage, 26 ... Wafer holder, W ... Wafer.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１２月１日[Submission date] December 1, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００６[Correction target item name] 0006
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００６】[0006]
【作用】テーブル内に形成した第１の冷却媒体通路でテ
ーブル全体を均一に冷却し、テーブル表面に開口した第
２の冷却媒体通路から噴出するヘリウムガス等により反
応熱によって加熱されたウェハとの熱交換効率を向上さ
せる。The entire table is uniformly cooled by the first cooling medium passage formed in the table, and the first opening opened on the table surface .
The heat exchange efficiency with the wafer heated by the reaction heat by the helium gas or the like ejected from the second cooling medium passage is improved.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｊ 37/32 9172−5Ｅ Ｈ０１Ｌ 21/68 Ｒ 8418−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication H01J 37/32 9172-5E H01L 21/68 R 8418-4M
Claims (1)
を載置し、チャンバー内にプラズマを発生させてウェハ
表面にエッチング等の処理を行なうようにしたプラズマ
処理装置において、前記テーブル内には第１の冷却媒体
通路及び第２の冷却媒体通路が形成され、第２の冷却媒
体通路はテーブル表面に開口していることを特徴とする
プラズマ処理装置。1. A plasma processing apparatus in which a wafer is placed on a table facing the chamber and plasma is generated in the chamber to perform processing such as etching on the surface of the wafer. And a second cooling medium passage are formed, and the second cooling medium passage is opened to the table surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35593691A JPH05175160A (en) | 1991-12-20 | 1991-12-20 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35593691A JPH05175160A (en) | 1991-12-20 | 1991-12-20 | Plasma processing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175160A true JPH05175160A (en) | 1993-07-13 |
Family
ID=18446496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35593691A Pending JPH05175160A (en) | 1991-12-20 | 1991-12-20 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175160A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201488A (en) * | 1993-12-28 | 1995-08-04 | Ngk Insulators Ltd | Heat radiating device |
| EP1378929A1 (en) * | 2002-07-04 | 2004-01-07 | Siegfried Dr. Strämke | Cooling for plasma reactor |
| KR100475017B1 (en) * | 1997-12-17 | 2005-05-27 | 삼성전자주식회사 | Susceptor in manufacturing equipment of semiconductor device and its manufacturing method |
| KR100505035B1 (en) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | Electrostatic chuck for supporting a substrate |
| KR100587628B1 (en) * | 2000-04-26 | 2006-06-08 | 액셀리스 테크놀로지스, 인크. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| KR100713334B1 (en) * | 2006-05-15 | 2007-05-04 | 동부일렉트로닉스 주식회사 | Device and method for controling temperature inetching apparatus |
| JP2010098011A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Substrate tray used in plasma etching equipment, etching equipment, and etching method |
| CN101996914A (en) * | 2009-08-07 | 2011-03-30 | 东京毅力科创株式会社 | Liquid processing apparatus for substrate and liquid processing method |
-
1991
- 1991-12-20 JP JP35593691A patent/JPH05175160A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07201488A (en) * | 1993-12-28 | 1995-08-04 | Ngk Insulators Ltd | Heat radiating device |
| KR100475017B1 (en) * | 1997-12-17 | 2005-05-27 | 삼성전자주식회사 | Susceptor in manufacturing equipment of semiconductor device and its manufacturing method |
| KR100587628B1 (en) * | 2000-04-26 | 2006-06-08 | 액셀리스 테크놀로지스, 인크. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| EP1378929A1 (en) * | 2002-07-04 | 2004-01-07 | Siegfried Dr. Strämke | Cooling for plasma reactor |
| KR100505035B1 (en) * | 2003-11-17 | 2005-07-29 | 삼성전자주식회사 | Electrostatic chuck for supporting a substrate |
| KR100713334B1 (en) * | 2006-05-15 | 2007-05-04 | 동부일렉트로닉스 주식회사 | Device and method for controling temperature inetching apparatus |
| JP2010098011A (en) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | Substrate tray used in plasma etching equipment, etching equipment, and etching method |
| CN101996914A (en) * | 2009-08-07 | 2011-03-30 | 东京毅力科创株式会社 | Liquid processing apparatus for substrate and liquid processing method |
| US8684014B2 (en) | 2009-08-07 | 2014-04-01 | Tokyo Electron Limited | Liquid processing apparatus for substrate and liquid processing method |
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| Date | Code | Title | Description |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20000627 |