JPH05174772A - Neutral vapor generating device - Google Patents
Neutral vapor generating deviceInfo
- Publication number
- JPH05174772A JPH05174772A JP3344389A JP34438991A JPH05174772A JP H05174772 A JPH05174772 A JP H05174772A JP 3344389 A JP3344389 A JP 3344389A JP 34438991 A JP34438991 A JP 34438991A JP H05174772 A JPH05174772 A JP H05174772A
- Authority
- JP
- Japan
- Prior art keywords
- neutral
- damper
- electrons
- substance
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は中性物質に電子ビームを
入射することにより中性蒸気を発生する中性蒸気発生装
置に係り、特に、中性物質の表面より電子ビームが散乱
し中性蒸気に電子が混在することを防止するに好適な中
性蒸気発生装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a neutral vapor generator for generating a neutral vapor by injecting an electron beam into a neutral substance, and more particularly, to a neutral substance which is scattered from the surface of the neutral substance. The present invention relates to a neutral steam generator suitable for preventing electrons from being mixed in steam.
【0002】[0002]
【従来の技術】従来の中性蒸気発生装置には、中性物質
の表面で散乱した電子ビームを捕獲する装置は見当たら
ない。2. Description of the Related Art No conventional neutral vapor generator has a device for capturing an electron beam scattered on the surface of a neutral substance.
【0003】[0003]
【発明が解決しようとする課題】従来では、中性物質の
表面で散乱した電子ビームをビームダンパで捕獲せず、
中性蒸気に混在した電子を、中性蒸気発生装置の上方に
設けた電極に電圧を印加して電子を捕獲しており、新た
に電子を捕獲する電極が必要とされるところに問題があ
った。Conventionally, the electron beam scattered on the surface of the neutral substance is not captured by the beam damper,
Electrons mixed in neutral vapor are captured by applying a voltage to the electrode installed above the neutral vapor generator, and there is a problem in that a new electrode for capturing electrons is required. It was
【0004】本発明の目的は、中性物質の表面で散乱し
た電子を捕獲するための電極を不要とすることにある。An object of the present invention is to eliminate the need for an electrode for capturing electrons scattered on the surface of a neutral substance.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明は中性物質の表面で散乱された電子ビームを
吸収するビームダンパの表面に、ビームダンパの表面か
ら再度散乱した電子を捕獲する構造を有する構造物とし
た。In order to achieve the above object, the present invention captures electrons re-scattered from the surface of the beam damper on the surface of the beam damper which absorbs the electron beam scattered on the surface of the neutral substance. The structure has a structure.
【0006】[0006]
【作用】中性物質の表面で散乱した電子は、ビームダン
パに入射するが、ビームダンパの表面の形状により電子
は表面に複数回衝突する。表面に複数回衝突した電子は
そのエネルギを失い、中性蒸気発生装置の上方には拡散
しない。The electrons scattered on the surface of the neutral substance are incident on the beam damper, and the electrons collide with the surface a plurality of times depending on the shape of the surface of the beam damper. Electrons that collide with the surface multiple times lose their energy and do not diffuse above the neutral vapor generator.
【0007】[0007]
【実施例】以下、本発明の一実施例を図1により説明す
る。るつぼ1の中に設置した中性物質5に、電子ビーム
発生装置4により電子ビーム3を入射し、中性蒸気7を
発生する。この時中性物質5の表面では、入射した電子
ビーム3の一部は散乱し、散乱電子ビーム6となる。こ
の散乱電子ビーム6を吸収するためビームダンパ2を設
置する。本発明ではビームダンパ2に入射した散乱電子
ビーム6は、図2に示すような軌道となりビームダンパ
2に吸収される。従来の方式では、図3に示すように、
ビームダンパ2の表面で反射を繰り返しながら、中性蒸
気の中に混入する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. An electron beam 3 is made incident on a neutral substance 5 installed in the crucible 1 by an electron beam generator 4 to generate a neutral vapor 7. At this time, on the surface of the neutral substance 5, part of the incident electron beam 3 is scattered and becomes a scattered electron beam 6. A beam damper 2 is installed to absorb the scattered electron beam 6. In the present invention, the scattered electron beam 6 incident on the beam damper 2 has a trajectory as shown in FIG. 2 and is absorbed by the beam damper 2. In the conventional method, as shown in FIG.
While repeating the reflection on the surface of the beam damper 2, it is mixed in the neutral vapor.
【0008】本発明の他の実施例を図4により説明す
る。この実施例はビームダンパ2の構造を中空にするこ
とにより、ビームダンパ2による散乱電子ビーム6の吸
収効率の向上を図るものである。ビームダンパ2に入射
した散乱電子ビーム6の一部はビームダンパ2に設けた
穴から中空部分8に入射する。入射した散乱電子ビーム
は中空部分8の中で反射を繰り返すうちに、エネルギを
失い、再度、中空部分8の外部には流出しない。Another embodiment of the present invention will be described with reference to FIG. In this embodiment, by making the structure of the beam damper 2 hollow, the absorption efficiency of the scattered electron beam 6 by the beam damper 2 is improved. Part of the scattered electron beam 6 that has entered the beam damper 2 enters the hollow portion 8 through a hole provided in the beam damper 2. The incident scattered electron beam loses energy while being repeatedly reflected in the hollow portion 8 and does not flow out of the hollow portion 8 again.
【0009】本発明の他の実施例を図5により説明す
る。この実施例はビームダンパ2の構造をハニカム構造
9にすることにより、ビームダンパ2による散乱電子ビ
ーム6の吸収効率の向上を図る。即ち、ハニカム構造9
に入射した散乱電子ビーム6はハニカム構造9の内部で
衝突を繰り返すうちにエネルギを失い、中性蒸気に混入
しない。Another embodiment of the present invention will be described with reference to FIG. In this embodiment, the beam damper 2 has a honeycomb structure 9 to improve the absorption efficiency of the scattered electron beam 6 by the beam damper 2. That is, the honeycomb structure 9
The scattered electron beam 6 that has entered is lost energy during repeated collisions inside the honeycomb structure 9 and is not mixed into neutral vapor.
【0010】[0010]
【発明の効果】本発明によれば、中性物質の表面で散乱
した電子をビームダンパでほとんど吸収するので、中性
蒸気発生装置の上方に散乱した電子を吸収するための電
極を設置する必要がなく、電子を含まない中性蒸気を得
ることが出来る。According to the present invention, most of the electrons scattered on the surface of the neutral substance are absorbed by the beam damper. Therefore, it is necessary to install an electrode above the neutral vapor generator for absorbing the scattered electrons. Without, it is possible to obtain a neutral vapor containing no electrons.
【図1】本発明の中性蒸気発生装置の一実施例の説明
図。FIG. 1 is an explanatory view of an embodiment of a neutral steam generator of the present invention.
【図2】本発明の中性蒸気発生装置における散乱電子ビ
ームの軌跡の説明図。FIG. 2 is an explanatory diagram of a trajectory of a scattered electron beam in the neutral vapor generator of the present invention.
【図3】従来技術による中性蒸気発生装置における散乱
電子ビームの軌跡の説明図。FIG. 3 is an explanatory view of a trajectory of a scattered electron beam in a neutral vapor generator according to a conventional technique.
【図4】本発明の他の実施例を示す説明図。FIG. 4 is an explanatory view showing another embodiment of the present invention.
【図5】本発明の他の実施例を示す説明図。FIG. 5 is an explanatory view showing another embodiment of the present invention.
1…るつぼ、2…ビームダンパ、3…電子ビーム、4…
電子ビーム発生装置、5…中性物質、6…散乱電子ビー
ム、7…中性蒸気。1 ... crucible, 2 ... beam damper, 3 ... electron beam, 4 ...
Electron beam generator, 5 ... Neutral substance, 6 ... Scattered electron beam, 7 ... Neutral vapor.
Claims (1)
物質を蒸発する電子ビーム入射装置と、前記保持装置に
保持された前記中性物質の表面で散乱した電子を吸収す
るビームダンパを有する中性蒸気発生装置において、前
記ビームダンパに蒸発した前記中性物質の流出方向に拡
散する前記電子を捕獲するような形状をなすことを特徴
とする中性蒸気発生装置。1. A holding device for holding a neutral substance, an electron beam injector for evaporating the neutral substance, and a beam damper for absorbing electrons scattered on the surface of the neutral substance held by the holding device. The neutral vapor generation device having, wherein the neutral vapor generation device is shaped so as to capture the electrons diffused in the outflow direction of the neutral substance evaporated in the beam damper.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3344389A JPH05174772A (en) | 1991-12-26 | 1991-12-26 | Neutral vapor generating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3344389A JPH05174772A (en) | 1991-12-26 | 1991-12-26 | Neutral vapor generating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05174772A true JPH05174772A (en) | 1993-07-13 |
Family
ID=18368876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3344389A Pending JPH05174772A (en) | 1991-12-26 | 1991-12-26 | Neutral vapor generating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05174772A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010106289A (en) * | 2008-10-28 | 2010-05-13 | Jeol Ltd | Vacuum vapor-deposition apparatus |
JP2011074415A (en) * | 2009-09-29 | 2011-04-14 | Toppan Printing Co Ltd | Electron absorber, and electron beam heating type vapor deposition apparatus using the same |
-
1991
- 1991-12-26 JP JP3344389A patent/JPH05174772A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010106289A (en) * | 2008-10-28 | 2010-05-13 | Jeol Ltd | Vacuum vapor-deposition apparatus |
JP2011074415A (en) * | 2009-09-29 | 2011-04-14 | Toppan Printing Co Ltd | Electron absorber, and electron beam heating type vapor deposition apparatus using the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |