JPH05152559A - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JPH05152559A JPH05152559A JP3312073A JP31207391A JPH05152559A JP H05152559 A JPH05152559 A JP H05152559A JP 3312073 A JP3312073 A JP 3312073A JP 31207391 A JP31207391 A JP 31207391A JP H05152559 A JPH05152559 A JP H05152559A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- solid
- conversion element
- electrode layers
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 32
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 101100115215 Caenorhabditis elegans cul-2 gene Proteins 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、複数の光電変換素子と
その光電変換素子で発生した電荷を読み出し、転送する
転送部を備えた固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having a plurality of photoelectric conversion elements and a transfer section for reading and transferring charges generated in the photoelectric conversion elements.
【０００２】[0002]
【従来の技術】近年、固体撮像装置の開発が進み、性能
の点から見て撮像管に匹敵ないし上回るものがある。そ
のなかでもインターライン転送方式ＣＣＤ固体撮像装置
（以下ＩＴ−ＣＣＤと略記）は特に優れた特性を持って
おり、実用化されている。2. Description of the Related Art In recent years, the development of solid-state image pickup devices has progressed, and there are some that are comparable to or superior to image pickup tubes in terms of performance. Among them, the interline transfer type CCD solid-state image pickup device (hereinafter abbreviated as IT-CCD) has particularly excellent characteristics and has been put to practical use.
【０００３】以下、図面を参照しながら、ＩＴ−ＣＣＤ
の従来の構成について説明する。図３はＩＴ−ＣＣＤの
全体構成図である。図３において、１は光電変換素子、
２は光電変換素子１に蓄積された信号電荷を垂直方向に
転送する垂直ＣＣＤ（以下ＶＣＣＤと略記）、３はＶＣ
ＣＤ２により転送された信号電荷を水平方向に転送する
水平ＣＣＤ（以下ＨＣＣＤと略記）、４はＨＣＣＤ３に
より転送された信号電荷を検知する出力アンプ部であ
る。An IT-CCD will now be described with reference to the drawings.
The conventional configuration will be described. FIG. 3 is an overall configuration diagram of the IT-CCD. In FIG. 3, 1 is a photoelectric conversion element,
2 is a vertical CCD (hereinafter abbreviated as VCCD) for vertically transferring the signal charges accumulated in the photoelectric conversion element 1 and 3 is a VC
A horizontal CCD (hereinafter abbreviated as HCCD) 4 that horizontally transfers the signal charges transferred by the CD 2 is an output amplifier unit that detects the signal charges transferred by the HCCD 3.
【０００４】図４は図３の点線部Ａの拡大図である。Ｖ
1，Ｖ2，Ｖ3，Ｖ4はＶＣＣＤ２の電荷を転送する転送電
極である。転送電極Ｖ4は光電変換素子１の電荷をＶＣ
ＣＤ２へ読み出す機能を持つ。転送電極Ｖ1，Ｖ2，
Ｖ3，Ｖ4は一つの光電変換素子１と隣接する他の光電変
換素子を分離する分離領域上に配されている。FIG. 4 is an enlarged view of a dotted line portion A in FIG. V
1 , V 2 , V 3 , and V 4 are transfer electrodes for transferring the charges of the VCCD 2 . The transfer electrode V 4 transfers the electric charge of the photoelectric conversion element 1 to VC.
It has the function of reading to CD2. Transfer electrodes V 1 , V 2 ,
V 3 and V 4 are arranged on a separation region that separates one photoelectric conversion element 1 from another photoelectric conversion element adjacent thereto.
【０００５】図５は図４の光電変換素子の分離領域Ｂ−
Ｃ間の断面図である。５は光電変換素子１を分離する分
離領域、６は絶縁膜である。転送電極Ｖ1，Ｖ2，Ｖ3，
Ｖ4は絶縁膜６を挟んで、それぞれが異なる電極層から
なっている。FIG. 5 shows an isolation region B- of the photoelectric conversion element of FIG.
It is sectional drawing between C. Reference numeral 5 is a separation region for separating the photoelectric conversion element 1, and 6 is an insulating film. Transfer electrodes V 1 , V 2 , V 3 ,
V 4 is composed of different electrode layers with the insulating film 6 interposed therebetween.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記の
ような構成では、転送電極Ｖ1，Ｖ2，Ｖ3，Ｖ4が異なる
電極層からできているため、電極数と同数の電極層が必
要である。また、光電変換素子１の分離領域５の幅ｙが
狭いため、全ての電極層が重なるように形成されるた
め、固体撮像装置の凹凸が大きくなり、カラーフィルタ
ーなどを光電変換素子１上に形成することが困難であ
る。また重なった電極層は側面からの応力にも弱い構造
となっていた。However, in the above structure, since the transfer electrodes V 1 , V 2 , V 3 , and V 4 are made of different electrode layers, the same number of electrode layers as the number of electrodes is required. Is. Further, since the width y of the separation region 5 of the photoelectric conversion element 1 is narrow, all the electrode layers are formed so as to overlap each other, so that the unevenness of the solid-state imaging device becomes large and a color filter or the like is formed on the photoelectric conversion element 1. Difficult to do. Further, the overlapping electrode layers had a structure that was weak against stress from the side surface.
【０００７】本発明は上記課題を解決するもので、電極
層を電極数よりも少なくし、拡散プロセスの簡略化を図
るとともに凹凸の小さい固体撮像装置を提供することを
目的とする。An object of the present invention is to solve the above problems, and to provide a solid-state image pickup device in which the number of electrode layers is smaller than the number of electrodes, the diffusion process is simplified, and unevenness is small.
【０００８】[0008]
【課題を解決するための手段】この目的を達成するため
に本発明は、行列状に配列された複数個の光電変換素子
とその光電変換素子で発生した電荷を読み出し転送する
転送電極を持つ転送部を備え、一つの上記光電変換素子
とその隣接する他の光電変換素子を分離する領域上に配
された多数の電極のうち２種類以上の電極を同一の電極
層で形成する構成としたものである。To achieve this object, the present invention provides a transfer having a plurality of photoelectric conversion elements arranged in a matrix and a transfer electrode for reading and transferring charges generated in the photoelectric conversion elements. And a structure in which two or more kinds of electrodes among a large number of electrodes arranged on a region separating one photoelectric conversion element from another photoelectric conversion element adjacent to the photoelectric conversion element are formed in the same electrode layer. Is.
【０００９】[0009]
【作用】この構成によって、光電変換素子の分離領域上
を通る電極の複数を同一の電極層で形成することで、電
極層の数を減らすことができ、拡散プロセスの簡略化を
図ることができるとともに、光電変換素子の分離領域上
の凹凸が小さくなる。With this structure, by forming a plurality of electrodes passing over the isolation region of the photoelectric conversion element with the same electrode layer, the number of electrode layers can be reduced and the diffusion process can be simplified. At the same time, the unevenness on the separation region of the photoelectric conversion element becomes smaller.
【００１０】[0010]
【実施例】以下、本発明の一実施例について図面を参照
しながら説明する。図１は本発明の一実施例の固体撮像
装置における撮像領域の拡大図である。図１，図２にお
いて従来例の図４，図５と同一部分には同一番号を付し
説明を省略する。すなわち本発明の特徴は図における転
送電極Ｖ1〜Ｖ4のうち、転送電極Ｖ2と転送電極Ｖ4は同
一の電極層から形成され、光電変換素子１の分離領域上
に配されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an enlarged view of an image pickup area in a solid-state image pickup device according to an embodiment of the present invention. In FIGS. 1 and 2, the same parts as those of FIGS. 4 and 5 of the conventional example are designated by the same reference numerals and the description thereof will be omitted. That is, the feature of the present invention is that among the transfer electrodes V 1 to V 4 in the figure, the transfer electrode V 2 and the transfer electrode V 4 are formed of the same electrode layer and are arranged on the separation region of the photoelectric conversion element 1.
【００１１】図２は図１の光電変換素子の分離領域Ｅ−
Ｆ間の断面図である。転送電極Ｖ2，Ｖ4は転送電極Ｖ1
の電極層の次の電極層として同時に形成されている。転
送電極Ｖ3は転送電極Ｖ2とＶ4の電極層が形成された
後、形成される。したがって、光電変換素子１の分離領
域５上に配された転送電極Ｖ1〜Ｖ4の４種類の電極を３
種類の電極層で形成でき、プロセスの簡略化を図ること
ができる。また、従来４種類の電極層であったものを３
種類の電極層で形成することで、分離領域５上の凹凸を
小さくすることができる。FIG. 2 shows an isolation region E- of the photoelectric conversion element of FIG.
It is sectional drawing between F. Transfer electrodes V 2 and V 4 are transfer electrodes V 1
Is simultaneously formed as the electrode layer next to the electrode layer of. The transfer electrode V 3 is formed after the electrode layers of the transfer electrodes V 2 and V 4 are formed. Therefore, three types of transfer electrodes V 1 to V 4 arranged on the isolation region 5 of the photoelectric conversion element 3 are used.
Since it can be formed of various types of electrode layers, the process can be simplified. In addition, the conventional 3 types of electrode layers
By forming the electrode layers of different types, the unevenness on the separation region 5 can be reduced.
【００１２】以上の実施例では、一つの種類の電極層か
ら形成された転送電極が一組の場合について述べたが、
複数組設けるとさらに効果があることは言うまでもな
い。In the above embodiments, the case where there is one set of transfer electrodes formed from one kind of electrode layer has been described.
It goes without saying that providing a plurality of sets is even more effective.
【００１３】また一つの種類の電極層から２以上の転送
電極を設けることも可能である。It is also possible to provide two or more transfer electrodes from one type of electrode layer.
【００１４】[0014]
【発明の効果】以上の実施例から明らかなように本発明
は、分離領域上に絶縁膜を介して積層形成された複数種
類の電極層を有し、その複数種類の電極層のうち一つの
種類の電極層から形成された複数個の転送電極を少なく
とも一組有する構成によるので、電極層の数が減り、拡
散プロセスの簡略化が図れるとともに光電変換素子の分
離領域上の凹凸が小さくなり、電極層側面から加わる応
力にも強く、カラーフィルターを光電変換素子上に形成
し易い固体撮像装置を提供できる。As is apparent from the above embodiments, the present invention has a plurality of kinds of electrode layers laminated on the isolation region with an insulating film interposed therebetween, and one of the plurality of kinds of electrode layers is formed. Since the configuration has at least one set of a plurality of transfer electrodes formed from different types of electrode layers, the number of electrode layers can be reduced, the diffusion process can be simplified, and the unevenness on the separation region of the photoelectric conversion element can be reduced. It is possible to provide a solid-state imaging device that is strong against stress applied from the side surface of the electrode layer and that can easily form a color filter on the photoelectric conversion element.
【図１】本発明の一実施例の固体撮像装置の部分平面図FIG. 1 is a partial plan view of a solid-state imaging device according to an embodiment of the present invention.
【図２】図１の固体撮像装置において、垂直ＣＣＤの分
離領域のＥ−Ｆ間断面図FIG. 2 is a cross-sectional view taken along the line EF of the separation area of the vertical CCD in the solid-state imaging device of FIG.
【図３】従来のインターライン転送方式ＣＣＤ固体撮像
装置の全体平面図FIG. 3 is an overall plan view of a conventional interline transfer CCD solid-state imaging device.
【図４】図３の点線部Ａの拡大平面図4 is an enlarged plan view of a dotted line portion A in FIG.
【図５】図４の垂直ＣＣＤの分離領域のＢ−Ｃ間断面図5 is a sectional view taken along line B-C of the separation area of the vertical CCD of FIG.
１ 光電変換素子 ２ 垂直ＣＣＤ ３ 水平ＣＣＤ ５ 分離領域（分離する領域） ６ 絶縁膜 1 photoelectric conversion element 2 vertical CCD 3 horizontal CCD 5 separation area (separation area) 6 insulating film
Claims (1)
と、その光電変換素子で発生した電荷を読み出し転送す
る転送電極を持つ転送部とを有する固体撮像装置におい
て、前記光電変換素子の一つとその光電変換素子と隣接
する光電変換素子とを分離する領域上に絶縁膜を介して
積層形成された複数種類の電極層を有し、その複数種類
の電極層のうち一つの種類の電極層から形成された複数
個の転送電極を少なくとも一組有することを特徴とする
固体撮像装置。1. A solid-state imaging device comprising: a plurality of photoelectric conversion elements arranged in a matrix; and a transfer section having transfer electrodes for reading and transferring charges generated in the photoelectric conversion elements. One and a plurality of kinds of electrode layers laminated through an insulating film on a region separating the photoelectric conversion element and an adjacent photoelectric conversion element, and one kind of electrode of the plurality of kinds of electrode layers A solid-state imaging device comprising at least one set of a plurality of transfer electrodes formed of layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3312073A JPH05152559A (en) | 1991-11-27 | 1991-11-27 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3312073A JPH05152559A (en) | 1991-11-27 | 1991-11-27 | Solid-state imaging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05152559A true JPH05152559A (en) | 1993-06-18 |
Family
ID=18024909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3312073A Pending JPH05152559A (en) | 1991-11-27 | 1991-11-27 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05152559A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5275190A (en) * | 1975-12-18 | 1977-06-23 | Toshiba Corp | Production of 4-phase drive charge coupling device |
| JPS6143472A (en) * | 1984-08-07 | 1986-03-03 | Mitsubishi Electric Corp | Solid-state image pickup device |
-
1991
- 1991-11-27 JP JP3312073A patent/JPH05152559A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5275190A (en) * | 1975-12-18 | 1977-06-23 | Toshiba Corp | Production of 4-phase drive charge coupling device |
| JPS6143472A (en) * | 1984-08-07 | 1986-03-03 | Mitsubishi Electric Corp | Solid-state image pickup device |
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