JPH05152215A - Film formation device - Google Patents
Film formation deviceInfo
- Publication number
- JPH05152215A JPH05152215A JP33948991A JP33948991A JPH05152215A JP H05152215 A JPH05152215 A JP H05152215A JP 33948991 A JP33948991 A JP 33948991A JP 33948991 A JP33948991 A JP 33948991A JP H05152215 A JPH05152215 A JP H05152215A
- Authority
- JP
- Japan
- Prior art keywords
- film forming
- chamber
- substrate
- substrate transfer
- film formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、真空雰囲気空間中，あ
るいは大気と遮断された空間中で気相または化学反応に
よって被成膜部材に薄膜を形成する成膜装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus for forming a thin film on a member to be film-formed by a gas phase or a chemical reaction in a vacuum atmosphere space or a space isolated from the atmosphere.
【０００２】[0002]
【従来の技術】絶縁体基板や半導体基板などの被成膜部
材（以下、基板という）の表面に所要の薄膜を形成する
この種の成膜装置としては、ＣＶＤ装置，プラズマＣＶ
Ｄ装置あるいは真空スパッタ装置等の蒸着装置が知られ
ている。近年、半導体素子，あるいは液晶表示素子の製
造における薄膜形成工程においては、プラズマＣＶＤ処
理が多用されている。2. Description of the Related Art As a film forming apparatus of this kind for forming a required thin film on the surface of a film forming member (hereinafter referred to as a substrate) such as an insulating substrate or a semiconductor substrate, a CVD apparatus and a plasma CV
A vapor deposition device such as a D device or a vacuum sputtering device is known. 2. Description of the Related Art In recent years, plasma CVD processing has been frequently used in a thin film forming process in manufacturing a semiconductor device or a liquid crystal display device.
【０００３】特に、プラズマＣＶＤは非平衡プラズマ中
で気体状の物質（処理ガス）を反応させて基板上に新し
い固体種を析出させる方法であり、真空処理室である成
膜チャンバー中で処理ガス（例えばシランガス）を高周
波（以下、ＲＦという）電力あるいは直流電力エネルギ
ーの印加で活性化（ラジカル化）し、基板上に薄膜（例
えばアモルファスシリコン膜）を生成堆積させるもので
ある。Particularly, plasma CVD is a method of reacting a gaseous substance (processing gas) in non-equilibrium plasma to deposit new solid species on a substrate, and processing gas is used in a film forming chamber which is a vacuum processing chamber. (For example, silane gas) is activated (radicalized) by applying high frequency (hereinafter referred to as RF) power or DC power energy, and a thin film (for example, an amorphous silicon film) is generated and deposited on the substrate.
【０００４】図４は従来の成膜装置の設備の概略を説明
する側面図であって、ワークステーションに運ばれたカ
セット１０に収納されている処理前の基板１００は、基
板搬送ロボット３−１により基板搬入室１１に搬入され
る。基板搬入室１１は基板の搬送時は大気に曝され、そ
の後密閉されて真空封止される真空／大気（Ｖ／Ａ）緩
衝室である。また、１２，１４，１５，１６，１７，１
９は基板搬送室であり、この基板搬送室１２から基板搬
送室１９の間は常時真空雰囲気（Ｖ）に保持される。FIG. 4 is a side view for explaining the outline of the equipment of a conventional film forming apparatus. The unprocessed substrate 100 stored in the cassette 10 carried to the workstation is the substrate transfer robot 3-1. Thus, the substrate is carried into the substrate carry-in chamber 11. The substrate carry-in chamber 11 is a vacuum / atmosphere (V / A) buffer chamber that is exposed to the atmosphere during the transportation of the substrate, and then is hermetically sealed. Also, 12, 14, 15, 16, 17, 1
Reference numeral 9 denotes a substrate transfer chamber, and a space between the substrate transfer chamber 12 and the substrate transfer chamber 19 is constantly maintained in a vacuum atmosphere (V).
【０００５】基板搬入室１１の基板は基板搬送ロボット
３−１によって予備加熱室１３に搬送され、次に基板搬
送室１４を介して成膜チャンバー２−１にセットされ
る。成膜チャンバー２−１では、例えば窒素ガスを反応
ガスとして成膜処理を行い、基板上に窒化膜を生成させ
る。成膜室２−１での成膜処理後、基板はロボット３−
１により成膜チャンバー２−２に搬送され、例えばシラ
ンガスを反応ガスとしてａシリコン膜を成膜する。The substrate in the substrate loading chamber 11 is transferred to the preheating chamber 13 by the substrate transfer robot 3-1 and then set in the film forming chamber 2-1 via the substrate transfer chamber 14. In the film forming chamber 2-1, for example, a film forming process is performed using nitrogen gas as a reaction gas to form a nitride film on the substrate. After the film formation process in the film formation chamber 2-1, the substrate is robot 3-
1 is transferred to the film forming chamber 2-2 and, for example, a silicon film is formed using silane gas as a reaction gas.
【０００６】以下、同様にして複数の成膜チャンバー・
・・３−ｎを搬送されて成膜処理された基板は、基板冷
却室１８で冷却後、基板搬出室２０を介して基板搬出カ
セット２１に載置されて搬出される。上記したような成
膜装置が、その設置ラインの長さが２０以上にも及び、
設置床はかなり広い面積を必要とする。Thereafter, a plurality of film forming chambers
The substrate on which the film has been formed by carrying 3-n is cooled in the substrate cooling chamber 18 and then placed on the substrate unloading cassette 21 via the substrate unloading chamber 20 and unloaded. The film forming apparatus as described above has an installation line length of 20 or more,
The installation floor requires a fairly large area.
【０００７】なお、このような成膜室を用いて基板の表
面に所要の膜を形成する従来技術を開示したものとして
は、特開昭５９−１０２２４号公報、あるいは特開平２
−２９４０１８号公報等を挙げることができる。A conventional technique for forming a desired film on the surface of a substrate using such a film forming chamber is disclosed in JP-A-59-10224 or JP-A-HEI-2.
-294018 publication etc. can be mentioned.
【０００８】[0008]
【発明が解決しようとする課題】上記したように、従来
の技術においては、成膜装置の設置に必要とする床面積
が大きく、また、各成膜チャンバー間の基板搬送のため
の予備室や搬送ロボットも数多く必要であり、装置の複
雑化と共に設備コストも大きいという問題がある。As described above, according to the prior art, the floor area required for installing the film forming apparatus is large, and the preparatory chamber for transferring the substrate between the film forming chambers is not required. A large number of transfer robots are required, and there is a problem that the equipment cost is high and the equipment is complicated.
【０００９】本発明の目的は、上記従来技術の問題を解
消し、成膜装置の設置床面積を低減させると共に、基板
搬送室や搬送ロボットの数を最小限として成膜装置の構
成を簡素化し、設備こすとを低減した成膜装置を提供す
ることにある。An object of the present invention is to solve the above-mentioned problems of the prior art, reduce the installation floor area of the film forming apparatus, and simplify the structure of the film forming apparatus by minimizing the number of substrate transfer chambers and transfer robots. Another object of the present invention is to provide a film forming apparatus with reduced equipment rubbing.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、図１に示したような基本構成を採用した
ものである。すなわち、図１は本発明による成膜装置の
基本構成を説明する断面模式図であり、同図に示したよ
うに、真空雰囲気空間を保持する複数の成膜チャンバー
２−１〜２−４を設置床面に対して垂直方向に積上げ、
積層した複数の成膜チャンバーの側面側に基板搬送ロボ
ット３−１を有する共通の基板搬送室３を設け、また、
上記基板搬送室３には、基板搬送ロボット３−１を垂直
方向に移動させるロボット昇降機構３−２０を備え、複
数の成膜チャンバー２−１〜２−４への基板の搬入およ
び搬出を共通に行うようにしている。In order to achieve the above object, the present invention adopts a basic configuration as shown in FIG. That is, FIG. 1 is a schematic cross-sectional view illustrating the basic configuration of the film forming apparatus according to the present invention. As shown in FIG. 1, a plurality of film forming chambers 2-1 to 2-4 for holding a vacuum atmosphere space are provided. Stacked vertically to the installation floor,
A common substrate transfer chamber 3 having a substrate transfer robot 3-1 is provided on the side surface side of a plurality of stacked film forming chambers, and
The substrate transfer chamber 3 is provided with a robot elevating mechanism 3-20 for moving the substrate transfer robot 3-1 in the vertical direction, and the substrate is commonly carried in and out of the plurality of film formation chambers 2-1 to 2-4. I am going to do it.
【００１１】なお、各成膜チャンバーと基板搬送室３と
の間には、真空ゲート４−１〜４−４が備えてある。ま
た、図１において、２−１−１と２−１−２，２−２−
１と２−２−２，２−３−１と２−３−２，２−４−１
と２−４−２は成膜チャンバー内に収納されている電極
対である。各成膜チャンバーは、同種の成膜を行うチャ
ンバーでもよいし、異なる成膜を行うチャンバーでもよ
く、またドライエッチング等の電界加工チャンバーでも
よい。例えば、成膜チャンバー２−４をアルミニウム薄
膜のスパッタチャンバー、成膜チャンバー２−３を窒化
膜の成膜チャンバー、２−２をアモルファスシリコン膜
の成膜チャンバー、そして成膜チャンバー２−１をドラ
イエッチングチャンバー、というように必要な成膜ある
いは加工、もしくは予熱，冷却等のチャンバーとするこ
とができる。Note that vacuum gates 4-1 to 4-4 are provided between each film forming chamber and the substrate transfer chamber 3. Further, in FIG. 1, 2-1-1 and 2-1-2, 2-2-
1 and 2-2-2, 2-3-1 and 2-3-2, 2-4-1
And 2-4-2 are electrode pairs housed in the film forming chamber. Each film forming chamber may be a chamber for forming the same kind of film, a chamber for forming a different film, or an electric field processing chamber such as dry etching. For example, the film forming chamber 2-4 is an aluminum thin film sputtering chamber, the film forming chamber 2-3 is a nitride film forming chamber, the 2-2 is an amorphous silicon film forming chamber, and the film forming chamber 2-1 is dry. The chamber may be a chamber for film formation or processing, preheating, cooling, etc., such as an etching chamber.
【００１２】[0012]
【作用】本発明は、上記のように構成したことにより、
成膜装置の設置床面積を低減させると共に、基板搬送室
や搬送ロボットの数を最小限として成膜装置の構成を簡
素化し、設備コストを低減した成膜装置を提供すること
ができる。The present invention, which is configured as described above, provides
It is possible to provide a film forming apparatus in which the installation floor area of the film forming apparatus is reduced and the number of substrate transfer chambers and transfer robots is minimized to simplify the structure of the film forming apparatus and reduce the facility cost.
【００１３】[0013]
【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。図２は本発明による成膜装置の１実施例を
説明する一部破断した斜視図であって、図１と同一符号
は同一部分に対応し、５−１〜５−４は電極予備室、６
は基板を搬入，搬出するローダ／アンローダである。Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 2 is a partially broken perspective view for explaining one embodiment of the film forming apparatus according to the present invention. The same reference numerals as those in FIG. 1 correspond to the same parts, and 5-1 to 5-4 are electrode preliminary chambers. 6
Is a loader / unloader for loading and unloading substrates.
【００１４】図示した成膜装置１は、成膜チャンバー２
−１〜２−４を床面に対して垂直方向に積層してなり、
これら成膜チャンバー２−１〜２−４には基板搬送室３
とこの基板搬送室３に取り付けられたローダ／アンロー
ダ６が設けてある。さらに、この実施例では、各成膜チ
ャンバーに電極予備室５−１〜５−４が設けてある。な
お、基板搬送室３内には複数の成膜チャンバー２−１〜
２−４に対して矢印Ａ−Ａ’に示したように、上下方向
に移動する基板搬送ロボットが収納されている。The illustrated film forming apparatus 1 includes a film forming chamber 2
-1 to 2-4 are laminated in a direction perpendicular to the floor surface,
A substrate transfer chamber 3 is provided in these film forming chambers 2-1 to 2-4.
A loader / unloader 6 attached to the substrate transfer chamber 3 is provided. Further, in this embodiment, electrode preparatory chambers 5-1 to 5-4 are provided in each film forming chamber. In addition, a plurality of film formation chambers 2-1 to 2-1 are provided in the substrate transfer chamber 3.
As shown by the arrow AA ′ with respect to 2-4, a substrate transfer robot that moves in the vertical direction is housed.
【００１５】この実施例によれば、ローダ／アンローダ
６から搬入された基板を基板搬送室３の基板搬送ロボッ
トで所要の成膜チャンバーにセットして成膜処理を実行
させる。通常は、基板への成膜順序で成膜チャンバーを
積層するのが好ましく、例えば成膜チャンバー２−４か
ら順次成膜チャンバー２−１に基板を搬送することによ
って、所要の成膜処理等を行う。According to this embodiment, the substrate loaded from the loader / unloader 6 is set in the required film forming chamber by the substrate transfer robot in the substrate transfer chamber 3 and the film forming process is executed. Generally, it is preferable to stack the film forming chambers in the order of film forming on the substrate. For example, by carrying the substrates sequentially from the film forming chamber 2-4 to the film forming chamber 2-1, a required film forming process or the like can be performed. To do.
【００１６】成膜処理済の基板は、再び基板搬送ロボッ
トによりローダ／アンローダ６から搬出される。なお、
上記実施例では、ローダ／アンローダ６は成膜室２と積
層させていないが、このローダ／アンローダ６も成膜室
２と積層した構成としてもよいことは勿論である。ま
た、成膜処理の前工程である加熱処理用のチャンバーを
成膜室２と積層させた構成とすることもできる。The substrate on which the film forming process is performed is carried out from the loader / unloader 6 again by the substrate transfer robot. In addition,
In the above embodiment, the loader / unloader 6 is not laminated with the film forming chamber 2, but it goes without saying that the loader / unloader 6 may also be laminated with the film forming chamber 2. Alternatively, a chamber for heat treatment, which is a pre-process of the film forming process, may be stacked with the film forming chamber 2.
【００１７】これにより、成膜装置の設置床面積は従来
に比較して大幅に低減させることができ、また、付属す
る各種のチャンバーや基板搬送ロボットの必要数を最小
限とすることができ、設備コストを著しく小さくするこ
とが可能となる。図３は本発明による成膜装置の他の実
施例を説明する一部破断した斜視図であって、図１，図
２と同一符号は同一部分に対応する。As a result, the installation floor area of the film forming apparatus can be significantly reduced as compared with the conventional one, and the required number of attached chambers and substrate transfer robots can be minimized. The equipment cost can be significantly reduced. FIG. 3 is a partially broken perspective view illustrating another embodiment of the film forming apparatus according to the present invention, and the same reference numerals as those in FIGS. 1 and 2 correspond to the same portions.
【００１８】同図に示した実施例では、成膜チャンバー
２−１〜２−４を設置床面に対して垂直方向に積層する
構成は前記図２の実施例と同一であるが、ローダ／アン
ローダ６が矢印Ｂ−Ｂ’に示したように上下方向に昇降
動作を行うことによって、基板を基板搬送室３−２〜３
−５との間で受け渡しするように構成している。なお、
搬送ロボット３−１はローダ／アンローダ６に収容する
のを可とするが、各基板搬送室３−２〜３−５にそれぞ
れ設置してもよい。In the embodiment shown in the figure, the structure in which the film forming chambers 2-1 to 2-4 are stacked in the direction perpendicular to the installation floor surface is the same as that of the embodiment shown in FIG. The unloader 6 moves up and down in the vertical direction as shown by the arrow BB ′, so that the substrate is transferred to the substrate transfer chamber 3-2 to 3-3.
-5 is configured to be handed over to and from. In addition,
The transfer robot 3-1 can be housed in the loader / unloader 6, but may be installed in each of the substrate transfer chambers 3-2 to 3-5.
【００１９】図示したように、この実施例ではローダ／
アンローダ６は昇降する構成であるので、各成膜チャン
バーに付属する基板搬送室３−２〜３−５には真空ゲー
ト４−９〜４−１２（４−１２は図示せず）が設けら
れ、ローダ／アンローダ６が到来したとき、この基板搬
送室３の真空ゲートが解放されて基板の受け渡しが行わ
れる。As shown, in this embodiment the loader /
Since the unloader 6 is configured to ascend and descend, vacuum gates 4-9 to 4-12 (4-12 are not shown) are provided in the substrate transfer chambers 3-2 to 3-5 attached to each film forming chamber. When the loader / unloader 6 arrives, the vacuum gate of the substrate transfer chamber 3 is released to transfer the substrate.
【００２０】この実施例によれば、上記実施例と同様に
成膜装置の設置床面積は従来に比較して大幅に低減させ
ることができ、また、付属する各種のチャンバーや基板
搬送ロボットの必要数を最小限とすることができ、設備
コストを著しく小さくすることが可能となる。According to this embodiment, like the above embodiment, the installation floor area of the film forming apparatus can be greatly reduced as compared with the conventional one, and various attached chambers and substrate transfer robots are required. The number can be minimized, and the facility cost can be significantly reduced.
【００２１】[0021]
【発明の効果】以上説明したように、本発明によれば、
成膜装置を構成する複数の成膜チャンバー、あるいはこ
れらの成膜チャンバーと付属の各種処理チャンバーや基
板搬送室等を垂直方向に積層することにより、成膜装置
の設置床面積を低減できると共に、成膜装置自体の構成
も簡略化でき、設備コストを大幅に削減することができ
る。As described above, according to the present invention,
By vertically stacking a plurality of film forming chambers forming the film forming apparatus, or these film forming chambers and various processing chambers and substrate transfer chambers attached thereto, the installation floor area of the film forming apparatus can be reduced, The structure of the film forming apparatus itself can be simplified and the equipment cost can be significantly reduced.
【図１】本発明による成膜装置の基本構成を説明する断
面模式図である。FIG. 1 is a schematic sectional view illustrating a basic configuration of a film forming apparatus according to the present invention.
【図２】本発明による成膜装置の１実施例を説明する一
部破断した斜視図である。FIG. 2 is a partially cutaway perspective view illustrating an embodiment of a film forming apparatus according to the present invention.
【図３】本発明による成膜装置の他の実施例を説明する
一部破断した斜視図である。FIG. 3 is a partially cutaway perspective view illustrating another embodiment of the film forming apparatus according to the present invention.
【図４】従来の成膜装置の設備の概略を説明する側面図
である。FIG. 4 is a side view illustrating an outline of equipment of a conventional film forming apparatus.
１・・・・成膜装置、２，２−１〜２−４・・・・成膜
チャンバー、２−１−１，２−１−２，２−２−１，２
−２−２，２−３−１，２−３−２，２−４−１，２−
４−２・・・・電極対、３，３−２，３−３，３−４，
３−５・・・・基板搬送室、３−１・・・・基板搬送ロ
ボット、３−２０・・・・ロボット昇降機構、４−１，
４−２，４−３，４−４・・・・真空ゲート、５−１，
５−２，５−３，５−４・・・・電極予備室、６・・・
・ローダ／アンローダ。1 ... Deposition apparatus, 2, 2-1 to 2-4 ... Deposition chamber, 2-1-1, 2-1-2, 2-2-1, 2
-2-2, 2-3-1, 2-3-2, 2-4-1, 2-
4-2 ... Electrode pair, 3,3-2,3-3,3-4
3-5 ...- Substrate transfer chamber, 3-1 ... Substrate transfer robot, 3-20 ...- Robot lifting mechanism, 4-1
4-2, 4-3, 4-4 ... Vacuum gate, 5-1
5-2, 5-3, 5-4 ... Electrode spare chamber, 6 ...
-Loader / unloader.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 // Ｈ０１Ｌ 21/285 Ｓ 7738−4Ｍ (72)発明者 青木 大也 富山県婦負郡八尾町保内２丁目１番地 国 際電気株式会社富山工場内 (72)発明者 村松 文雄 富山県婦負郡八尾町保内２丁目１番地 国 際電気株式会社富山工場内 (72)発明者 竹田 智彦 富山県婦負郡八尾町保内２丁目１番地 国 際電気株式会社富山工場内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location // H01L 21/285 S 7738-4M (72) Inventor Daiya Aoki Yanai-cho, Nagi-gun, Toyama Prefecture 2-chome Kokusai Electric Co., Ltd. Toyama Plant (72) Inventor Fumio Muramatsu 2-chome, Yao-cho Yanai-cho, Toyama Pref. Machiho 2-1, 1 Kokusai Electric Co., Ltd. Toyama Factory
Claims (2)
数の成膜チャンバーと、前記複数の成膜チャンバーの側
面に設置した基板搬送室とを備えたことを特徴とする成
膜装置。1. A film forming apparatus comprising: a plurality of film forming chambers stacked in a direction perpendicular to an installation floor surface; and a substrate transfer chamber installed on a side surface of the plurality of film forming chambers.
数の成膜チャンバーと、前記複数の成膜チャンバーの側
面に設置した基板搬送室と、前記基板搬送室に収納して
前記複数の成膜チャンバー間を移動して基板を受け渡し
する基板搬送ロボットとを備えたことを特徴とする成膜
装置。2. A plurality of film forming chambers stacked in a direction perpendicular to an installation floor surface, a substrate transfer chamber installed on a side surface of the plurality of film forming chambers, and a plurality of substrate transfer chambers accommodated in the substrate transfer chamber. A film forming apparatus comprising: a substrate transfer robot that moves between film forming chambers to transfer a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33948991A JPH05152215A (en) | 1991-11-29 | 1991-11-29 | Film formation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33948991A JPH05152215A (en) | 1991-11-29 | 1991-11-29 | Film formation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05152215A true JPH05152215A (en) | 1993-06-18 |
Family
ID=18327953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33948991A Pending JPH05152215A (en) | 1991-11-29 | 1991-11-29 | Film formation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05152215A (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5788447A (en) * | 1995-08-05 | 1998-08-04 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| WO1999010558A1 (en) * | 1997-08-29 | 1999-03-04 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US6053980A (en) * | 1996-09-26 | 2000-04-25 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| JP2000150618A (en) * | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | Vacuum treatment system |
| JP2000512082A (en) * | 1996-06-13 | 2000-09-12 | ブルックス オートメーション インコーポレイテッド | Multi-level substrate processing equipment |
| US6382895B1 (en) | 1998-12-28 | 2002-05-07 | Anelva Corporation | Substrate processing apparatus |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| US7351291B2 (en) | 2002-02-20 | 2008-04-01 | Tokyo Electron Limited | Semiconductor processing system |
| US20120079982A1 (en) * | 2010-10-05 | 2012-04-05 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| JP2013531363A (en) * | 2010-04-30 | 2013-08-01 | 株式会社テラセミコン | Substrate processing equipment |
| JP2016009724A (en) * | 2014-06-23 | 2016-01-18 | 東京エレクトロン株式会社 | Deposition device and deposition method |
| WO2018003330A1 (en) * | 2016-06-30 | 2018-01-04 | 東京エレクトロン株式会社 | Vacuum processing device, vacuum processing method, and storage medium |
-
1991
- 1991-11-29 JP JP33948991A patent/JPH05152215A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066210A (en) * | 1995-08-05 | 2000-05-23 | Kokusai Electric Co., Ltd. | Substrate processing apparatus with a processing chamber, transfer chamber, intermediate holding chamber, and an atmospheric pressure section |
| US6143083A (en) * | 1995-08-05 | 2000-11-07 | Kokusai Electric Co., Ltd. | Substrate transferring mechanism |
| US5788447A (en) * | 1995-08-05 | 1998-08-04 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| JP2008258650A (en) * | 1996-06-13 | 2008-10-23 | Brooks Autom Inc | Multi-level substrate processing apparatus |
| JP2000512082A (en) * | 1996-06-13 | 2000-09-12 | ブルックス オートメーション インコーポレイテッド | Multi-level substrate processing equipment |
| JP2011139098A (en) * | 1996-06-13 | 2011-07-14 | Brooks Automation Inc | Multi-level substrate processing apparatus |
| US6053980A (en) * | 1996-09-26 | 2000-04-25 | Kokusai Electric Co., Ltd. | Substrate processing apparatus |
| WO1999010558A1 (en) * | 1997-08-29 | 1999-03-04 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
| JP2000150618A (en) * | 1998-11-17 | 2000-05-30 | Tokyo Electron Ltd | Vacuum treatment system |
| US6382895B1 (en) | 1998-12-28 | 2002-05-07 | Anelva Corporation | Substrate processing apparatus |
| US6503330B1 (en) | 1999-12-22 | 2003-01-07 | Genus, Inc. | Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition |
| US6551399B1 (en) | 2000-01-10 | 2003-04-22 | Genus Inc. | Fully integrated process for MIM capacitors using atomic layer deposition |
| US6617173B1 (en) | 2000-10-11 | 2003-09-09 | Genus, Inc. | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition |
| US7351291B2 (en) | 2002-02-20 | 2008-04-01 | Tokyo Electron Limited | Semiconductor processing system |
| JP2013531363A (en) * | 2010-04-30 | 2013-08-01 | 株式会社テラセミコン | Substrate processing equipment |
| US20120079982A1 (en) * | 2010-10-05 | 2012-04-05 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| US9285168B2 (en) * | 2010-10-05 | 2016-03-15 | Applied Materials, Inc. | Module for ozone cure and post-cure moisture treatment |
| JP2016009724A (en) * | 2014-06-23 | 2016-01-18 | 東京エレクトロン株式会社 | Deposition device and deposition method |
| WO2018003330A1 (en) * | 2016-06-30 | 2018-01-04 | 東京エレクトロン株式会社 | Vacuum processing device, vacuum processing method, and storage medium |
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