JPH05144877A - Mounting method of chip component - Google Patents
Mounting method of chip componentInfo
- Publication number
- JPH05144877A JPH05144877A JP3303639A JP30363991A JPH05144877A JP H05144877 A JPH05144877 A JP H05144877A JP 3303639 A JP3303639 A JP 3303639A JP 30363991 A JP30363991 A JP 30363991A JP H05144877 A JPH05144877 A JP H05144877A
- Authority
- JP
- Japan
- Prior art keywords
- spherical body
- resin
- electrodes
- spherical bodies
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、チップ部品の実装方法
に関し、特に、平面実装型のチップ部品の実装方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip component mounting method, and more particularly, to a planar mounting type chip component mounting method.
【０００２】[0002]
【従来の技術】近時、電子部品の実装密度を向上させる
ため、部品の小型化とともに、実装方法にも工夫が施さ
れていて、例えば、半導体チップの実装方法として、図
３に示すように実装方法が提案されている。同図に示す
実装方法は、いずれもガラス基板に半導体チップを実装
するものであって、図３（ａ）は、ハンダダンプ接続
方法（通称フリップチップ接続方法とも呼ばれてい
る）、図３（ｂ）は、金バンプ接続方法、図３（ｃ）
は、金バンプ（またはハンダバンプ）を熱硬化型導電
性樹脂で接続する方法（特開昭６１−９４３３０号公
報）、図３（ｄ）は、金バンプを大きな荷重で変形さ
せ、この状態で紫外線硬化型樹脂を硬化させて固定する
マイクロバンプ接続方法などである。2. Description of the Related Art Recently, in order to improve the mounting density of electronic parts, the parts have been downsized and the mounting method has been devised. For example, as a semiconductor chip mounting method, as shown in FIG. Implementation methods have been proposed. The mounting methods shown in the figure are all for mounting a semiconductor chip on a glass substrate, and FIG. 3A shows a solder dump connection method (also called a flip chip connection method) and FIG. ) Is a gold bump connection method, FIG.
Is a method of connecting gold bumps (or solder bumps) with a thermosetting conductive resin (Japanese Patent Laid-Open No. 61-94330), and FIG. For example, a micro bump connection method in which a curable resin is cured and fixed.
【０００３】次に、以上の従来の各接続方法について、
その工程を詳述すると、まず、図３（ａ）に示すハン
ダダンプ接続方法では、半導体チップ３１の電極にハン
ダバンプ３２（Ｐｂ／Ｓｎ）を形成する。一方、ガラス
基板３９には、金属膜３６の配線が形成され、この金属
膜３６上にはハンダ濡れ性のよい他の金属膜３５が設け
られていて、金属膜３５の所定個所には、ハンダの流動
を阻止するハンダダム３８が形成されている。半導体チ
ップ３１の実装では、ハンダダンプ３２を金属膜３５上
に位置させて、フラックスで仮止めした後に、赤外線リ
フローやホットプレートなどにより１８０〜３５０℃程
度の温度で加熱し、ハンダを溶融させることで接続す
る。Next, regarding each of the conventional connection methods described above,
The steps will be described in detail. First, in the solder dump connection method shown in FIG. 3A, the solder bumps 32 (Pb / Sn) are formed on the electrodes of the semiconductor chip 31. On the other hand, the wiring of the metal film 36 is formed on the glass substrate 39, another metal film 35 having good solder wettability is provided on the metal film 36, and the solder is provided at a predetermined portion of the metal film 35. Is formed to prevent the flow of the solder dam 38. In mounting the semiconductor chip 31, the solder dump 32 is positioned on the metal film 35, temporarily fixed with flux, and then heated at a temperature of about 180 to 350 ° C. by infrared reflow or a hot plate to melt the solder. Connecting.
【０００４】図３（ｂ）に示す金バンプ接続方法で
は、半導体チップ３１の電極に金バンプ３３を形成す
る。一方、ガラス基板３９には、金属膜３６の配線が形
成され、この金属膜３６上にはＳｎメッキ膜３７が設け
られている。半導体チップ３１の実装では、金ダンプ３
３をＳｎメッキ膜３７上に位置させた後に、４５０℃程
度の温度まで加熱し、金バンプ３３とＳｎメッキ膜３７
とをＡｕーＳｎ共晶結合させて接続する。In the gold bump connection method shown in FIG. 3B, gold bumps 33 are formed on the electrodes of the semiconductor chip 31. On the other hand, the wiring of the metal film 36 is formed on the glass substrate 39, and the Sn plating film 37 is provided on the metal film 36. In mounting the semiconductor chip 31, the gold dump 3
3 is placed on the Sn plating film 37, and then heated to a temperature of about 450 ° C., so that the gold bump 33 and the Sn plating film 37
And are connected by Au-Sn eutectic bonding.
【０００５】図３（ｃ）に示す金バンプを熱硬化型の
導電樹脂で接続する方法では、半導体チップ３１の電極
に金バンプ３３を形成するとともに、ガラス基板３９に
は、金属膜３６の配線が形成されている。半導体チップ
３１の実装では、金属膜３６の所定個所に導電性樹脂３
４を、ディスペンサー法やスクリーン印刷法、あるいは
転写法により選択的に供給し、導電性樹脂３４に半導体
チップ３１の金バンプ３３を押しつけ、この状態で１５
０℃程度の熱を加えて、導電性樹脂３４を硬化させるこ
とにより接続する。In the method of connecting the gold bumps shown in FIG. 3C with a thermosetting conductive resin, the gold bumps 33 are formed on the electrodes of the semiconductor chip 31, and the wiring of the metal film 36 is formed on the glass substrate 39. Are formed. When the semiconductor chip 31 is mounted, the conductive resin 3 is applied to a predetermined portion of the metal film 36.
4 is selectively supplied by a dispenser method, a screen printing method, or a transfer method, and the gold bumps 33 of the semiconductor chip 31 are pressed against the conductive resin 34.
Connection is made by applying heat of about 0 ° C. to cure the conductive resin 34.
【０００６】図３（ｄ）に示すマイクロバンプ接続方
法では、半導体チップ３１の電極に金バンプ３３を形成
するとともに、ガラス基板３９には、金属膜３６の配線
が形成されている。半導体チップ３１の実装では、金属
膜３６上に半導体チップ３１の金バンプ３３をその先端
が面接触するまで押圧して塑性変形させ、この状態で金
パンプ３３の周囲に紫外線硬化型接着樹脂３０を供給
し、紫外線を照射することにより樹脂３０を硬化させる
ことにより接続する。しかしながら、このような半導体
チップ３１の実装方法には、いずれも以下に説明する技
術的課題があった。In the micro-bump connection method shown in FIG. 3D, the gold bumps 33 are formed on the electrodes of the semiconductor chip 31, and the wiring of the metal film 36 is formed on the glass substrate 39. In mounting the semiconductor chip 31, the gold bumps 33 of the semiconductor chip 31 are pressed onto the metal film 36 until their tips come into surface contact to be plastically deformed, and in this state, the ultraviolet curable adhesive resin 30 is placed around the gold pump 33. The resin 30 is supplied and irradiated with ultraviolet rays to cure the resin 30 to be connected. However, each of the mounting methods of such a semiconductor chip 31 has a technical problem described below.
【０００７】[0007]
【発明が解決しようとする課題】すなわち、上記およ
びの実装方法では、ハンダないしは金バンプ３２，３
３を形成する際に、バンプ高さが５〜１０％のばらつき
を持っており、このばらつきにより接続時に断線などの
接続不良が生じ易い。このようなばらつきを解消する方
法として、の実装方法があるが、このの実装方法で
は、バンプ３３に大きな荷重をかけて、その一部を塑性
変形させて接続するので、半導体チップ３１や基板３９
の金属膜３６に損傷を与える恐れがある。That is, in the mounting methods described above and above, solder or gold bumps 32, 3 are used.
When forming No. 3, the bump height has a variation of 5 to 10%, and this variation easily causes a connection failure such as disconnection at the time of connection. As a method for eliminating such variations, there is a mounting method. In this mounting method, a large load is applied to the bumps 33, and a part of the bumps is plastically deformed to be connected, so that the semiconductor chip 31 and the substrate 39 are connected.
May damage the metal film 36.
【０００８】また、およびの方法では、基板３９側
の金属膜３６をハンダ濡れ性のよい他の金属膜３２やＳ
ｎメッキ膜３７で覆う必要があるので、工程が複雑にな
るとともに、基板３１側の電極材料が制限される。さら
に、〜の方法では、いずれも加熱を必要とするた
め、基板３１の金属膜３６が熱ストレスを受け、断線を
引起し易い。さらにまた、上述した実装方法では、何れ
の場合も接続工程中や接続工程後に、接続部分を封止樹
脂によって覆い、接続部を保護する工程を付加する必要
があった。In the methods (1) and (2), the metal film 36 on the substrate 39 side is replaced with another metal film 32 or S having good solder wettability.
Since it is necessary to cover with the n-plated film 37, the process becomes complicated and the electrode material on the substrate 31 side is limited. Further, in any of the methods (1) to (3), since heating is required, the metal film 36 of the substrate 31 is easily subjected to thermal stress and easily breaks. Furthermore, in any of the mounting methods described above, it is necessary to add a step of covering the connection portion with a sealing resin and protecting the connection portion during or after the connection step in any case.
【０００９】この発明は、このような従来の問題点に鑑
みてなされたものであり、その目的とするところは、バ
ンプ高さのばらつきに起因する接続不良や接続損傷の問
題および加熱による熱ストレスの問題を解消しつつ、電
極材料の選択の自由度が大きく、かつ、接続部の保護工
程を付加する必要がないチップ部品の実装方法を提供す
ることにある。The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to provide a problem of connection failure or connection damage due to a variation in bump height and a thermal stress due to heating. SUMMARY OF THE INVENTION It is an object of the present invention to provide a mounting method for a chip component, which has a high degree of freedom in selection of an electrode material and eliminates the need to add a step of protecting a connection portion while solving the above problem.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明は、チップ部品側に形成された第１の電極と
基板側に形成された第２の電極とを電気的に接続するチ
ップ部品の実装方法において、未硬化のエネルギー線硬
化型の樹脂を可撓性膜状壁物質と金属膜とで包囲した球
状体を用いる方法であって、まず、この球状体を第１の
電極と第２の電極との間に介装する。次いで、チップ部
品を基板側に押圧して、球状体を圧壊してその内部の前
記樹脂を溢出させる。しかる後に、溢出した樹脂にエネ
ルギー線を照射して硬化させることを特徴としている。To achieve the above object, the present invention provides a chip for electrically connecting a first electrode formed on the chip component side and a second electrode formed on the substrate side. A method of mounting a component is a method of using a spherical body in which an uncured energy ray-curable resin is surrounded by a flexible film-shaped wall substance and a metal film. First, this spherical body is used as a first electrode. It is interposed between the second electrode and the second electrode. Next, the chip component is pressed toward the substrate side to crush the spherical body and overflow the resin inside. After that, the overflowing resin is irradiated with energy rays to be cured.
【００１１】前記エネルギー線硬化型樹脂の好適な例
は、紫外線硬化型樹脂である。A preferred example of the energy ray curable resin is an ultraviolet curable resin.
【００１２】[0012]
【作用】上記構成のチップ部品の実装方法によれば、球
状体を圧壊して、その内部の前記樹脂を溢出させた後
に、溢出した樹脂にエネルギー線を照射して硬化させる
ことで電気的な接続を確保するので、第１の電極を形成
する際の高さのばらつきは、球状体の圧壊により吸収さ
れる。また、球状体は、未硬化のエネルギー線硬化型の
樹脂を可撓性膜状壁物質と金属膜とで包囲したものなの
で、これを圧壊する際に大きな荷重を加えなくてもよ
い。さらに、溢出した樹脂を硬化させる際には、エネル
ギー線を樹脂の部分に照射するだけなので、加熱による
熱ストレスは非常に小さくなる。According to the chip component mounting method having the above-described structure, the spherical body is crushed to overflow the resin therein, and then the overflowing resin is irradiated with an energy ray to be cured, thereby electrically Since the connection is secured, the variation in height when forming the first electrode is absorbed by the crushing of the spherical body. Further, since the spherical body is formed by surrounding the uncured energy ray-curable resin with the flexible film wall material and the metal film, it is not necessary to apply a large load when crushing the resin. Further, when the overflowed resin is cured, only the energy ray is applied to the resin portion, so that the thermal stress due to heating becomes very small.
【００１３】[0013]
【実施例】以下本発明の好適な実施例について添附図面
を参照にして詳細に説明する。図１および図２は、本発
明にかかるチップ部品の実装方法の一実施例を示してい
る。同図に示す実装方法は、本発明を半導体チップ１１
に適用した場合を例示しており、半導体チップ１１の下
面には、所定の間隔をおいてバンプ（第１の電極）１２
が形成されている。Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. 1 and 2 show an embodiment of a chip component mounting method according to the present invention. The mounting method shown in FIG.
In this example, the bumps (first electrodes) 12 are formed on the lower surface of the semiconductor chip 11 at predetermined intervals.
Are formed.
【００１４】一方、ガラス基板１３側には、半導体チッ
プ１１に形成されているバンプ１２に対応した第２の電
極１４が形成されている。上記バンプ１２の材料として
は、Ａｕが一般的に用いられるが、ハンダやＣｕなどの
金属であってもよい。また、第２の電極１４は、ガラス
基板１３上にＩＴＯ膜やネサ膜を蒸着法により形成し、
これらの膜の上に配線抵抗を下げるために金属膜、例え
ば、ＣｒーＣｕ、ＣｒーＡｕ等を形成した構成が採用さ
れる。On the other hand, on the glass substrate 13 side, second electrodes 14 corresponding to the bumps 12 formed on the semiconductor chip 11 are formed. Au is generally used as the material of the bumps 12, but a metal such as solder or Cu may be used. The second electrode 14 is formed by depositing an ITO film or a NES film on the glass substrate 13 by vapor deposition.
A structure in which a metal film, for example, Cr-Cu or Cr-Au, is formed on these films in order to reduce the wiring resistance is adopted.
【００１５】半導体チップ１１の実装方法では、まず、
図１（ａ）に示すように、ガラス基板１３上の第２の電
極14の上に球状体１５が選択的に載せられる。球状体１
５を電極１４上に選択的に載せる手段としては、たとえ
ば、電極１４に球状体１５の曲率とほぼ同じ程度のディ
ンプルを形成することが好ましい。In the method of mounting the semiconductor chip 11, first,
As shown in FIG. 1A, the spherical body 15 is selectively placed on the second electrode 14 on the glass substrate 13. Sphere 1
As a means for selectively mounting 5 on the electrode 14, for example, it is preferable to form a dimple on the electrode 14 to a degree substantially equal to the curvature of the spherical body 15.
【００１６】球状体１５が電極１４上に載せられると、
基板１３の上方から半導体チップ１１をフェイスダウン
して、バンプ１２と第２の電極１４とを位置合わせし、
バンプ１２と第２の電極１４との間に球状体１５を介在
させる。When the spherical body 15 is placed on the electrode 14,
The semiconductor chip 11 is faced down from above the substrate 13 to align the bump 12 and the second electrode 14,
A spherical body 15 is interposed between the bump 12 and the second electrode 14.
【００１７】ここで用いられる球状体１５の詳細を図２
に示している。同図に示す球状体１５は、エネルギー線
硬化型の樹脂として、紫外線硬化型樹脂１６を採用し、
未硬化状の紫外線硬化型樹脂１６の周囲を可撓性膜状壁
物質１７と金属膜１８とで包囲してマイクロカプセル化
したものである。The details of the spherical body 15 used here are shown in FIG.
Is shown in. The spherical body 15 shown in the figure adopts an ultraviolet curable resin 16 as an energy ray curable resin,
An uncured ultraviolet curable resin 16 is surrounded by a flexible film wall material 17 and a metal film 18 to be microencapsulated.
【００１８】このような構造の球状体１５の金属膜１８
の厚みとしては、バンプ１２の高さのばらつきが吸収補
正できる膜厚を有することが望ましく、バンプ１２の高
さの設定によって異なるが、例えば、バンプ１２の高さ
が２０μｍの場合では、バンプ１２の高さのばらつきが
５〜１０％あり、また、球状体１５の表面の金属膜１８
を弾性変形させることから、膜厚は２μｍより大きい値
が望ましい。また、球状体１５の直径は、その内部に樹
脂１７を注入する際の最低限度の必要量、および接続部
分を完全に覆うために必要な量を考慮すれば、５μｍ以
上とすることが望ましい。The metal film 18 of the spherical body 15 having such a structure
As the thickness of the bump 12, it is desirable to have a film thickness capable of absorbing and correcting variations in the height of the bump 12, and it depends on the setting of the height of the bump 12. For example, when the height of the bump 12 is 20 μm, the bump 12 Of the metal film 18 on the surface of the spherical body 15 is 5 to 10%.
It is desirable to set the film thickness to a value larger than 2 μm, since it elastically deforms. Further, the diameter of the spherical body 15 is preferably 5 μm or more in consideration of the minimum required amount when the resin 17 is injected into the inside and the amount required to completely cover the connection portion.
【００１９】球状体１５の可撓性膜状壁物質１７として
は、ゴム系材料、例えば、アラビアゴム，カラヤゴム，
各種合成ゴムが採用される。また、金属膜１８には、無
電界メッキが可能なＡｕ，Ｃｕ，Ｐｂ／Ｓｎなどの金属
が採用される。球状体１５の形成方法としては、芯物質
となる紫外線硬化型樹脂１６の液を微粒子状にして適当
な媒質中に分散し、得られた微粒子のそれぞれにゴム系
の物質で作られた膜で被覆するか、あるいは、ゴム系の
膜で容器を作り、その中に紫外線硬化型樹脂１６を充填
する。As the flexible film-shaped wall substance 17 of the spherical body 15, a rubber material such as arabic rubber, karaya rubber,
Various synthetic rubbers are adopted. Further, for the metal film 18, a metal such as Au, Cu, Pb / Sn or the like capable of electroless plating is adopted. As a method for forming the spherical body 15, a liquid of the ultraviolet curable resin 16 as a core substance is made into fine particles and dispersed in an appropriate medium, and each of the obtained fine particles is a film made of a rubber-based substance. The container is covered or made of a rubber-based film, and the ultraviolet curable resin 16 is filled therein.
【００２０】このようにして得られたものを、塩化パラ
ジウム液に浸漬して触媒処理し（ゴム系の膜の表面にパ
ラジウムを析出させる）、次に、処理したものを無電界
メッキ液に浸漬して、化学的にパラジウムにメッキ金属
を付着させることにより金属膜１８を形成すればマイク
ロカプセル化した球状体１５が得られる。The thus obtained product is dipped in a palladium chloride solution for catalytic treatment (palladium is deposited on the surface of a rubber film), and then the treated product is dipped in an electroless plating solution. Then, the metal film 18 is formed by chemically adhering a plating metal to palladium, whereby the microcapsulated spherical body 15 is obtained.
【００２１】以上のようにして、球状体１５がバンプ１
２と第２の電極１４との間に介在させられると、図１
（ｂ）に示すように、半導体チップ１１の上面から徐々
に荷重を加えて、バンプ１２で球状体１５を直下の第２
の電極１４に押しつけ、球状体１５を塑性変形させなが
ら圧壊する。この場合、球状体１５の塑性変形は、球状
体１５の高さのばらつきが完全に無くなるまで行われ
る。As described above, the spherical body 15 has the bump 1
2 between the second electrode 14 and the second electrode 14 shown in FIG.
As shown in (b), a load is gradually applied from the upper surface of the semiconductor chip 11 to the bump 12 so that the spherical body 15 is immediately below the second body.
Then, the spherical body 15 is crushed while being plastically deformed. In this case, the plastic deformation of the spherical body 15 is performed until the variation in the height of the spherical body 15 is completely eliminated.
【００２２】以上の操作により、球状体１５の内部の紫
外線硬化型樹脂１６は、外部に溢出され、ほぼ完全に潰
された球状体１５の金属膜１８の周辺を覆うことにな
る。次いで、球状体１５を圧壊した時の高さのばらつき
が解消されたら、球状体１５の可撓性膜状壁物質１６と
金属膜１８の弾性力のみが働く荷重に落とし、球状体１
５から溢れ出た紫外線硬化型樹脂１６を基板１３の下面
側から紫外線１９を照射して硬化させる。By the above operation, the ultraviolet curable resin 16 inside the spherical body 15 overflows to the outside and covers the periphery of the metal film 18 of the spherical body 15 which is almost completely crushed. Next, when the variation in height when the spherical body 15 is crushed is eliminated, the spherical body 15 is reduced to a load in which only the elastic force of the flexible film wall substance 16 of the spherical body 15 and the metal film 18 works.
The ultraviolet curable resin 16 overflowing from No. 5 is irradiated with ultraviolet rays 19 from the lower surface side of the substrate 13 to be cured.
【００２３】なお、上記の工程において、球状体１５の
内部から紫外線硬化型樹脂１６が外部に容易に溢出させ
るために、例えば、バンプ１２の先端表面を凹凸にして
おくと、金属膜１８と膜状壁物質１７とが容易に破断さ
れ、半導体チップ１１に加える荷重をさらに低くするこ
とができる。In the above process, in order to allow the ultraviolet curable resin 16 to easily overflow from the inside of the spherical body 15 to the outside, for example, if the tip surface of the bump 12 is made uneven, the metal film 18 and the film are formed. The wall material 17 is easily broken and the load applied to the semiconductor chip 11 can be further reduced.
【００２４】さて、以上の工程で行われる半導体チップ
１１の実装方法によれば、球状体１５を圧壊して、その
内部の紫外線硬化型樹脂１６を外部に溢出させた後に、
溢出した樹脂１６に紫外線１９を照射して硬化させるこ
とで電気的な接続を確保するので、バンプ１２（第１の
電極）を形成する際の高さのばらつきは、球状体１５の
圧壊により吸収され、ばらつきに起因する断線の問題が
回避される。According to the method of mounting the semiconductor chip 11 carried out in the above steps, the spherical body 15 is crushed and the ultraviolet curable resin 16 therein is overflowed to the outside,
Since the electrical connection is secured by irradiating the overflowed resin 16 with ultraviolet rays 19 to cure it, the variation in height when forming the bump 12 (first electrode) is absorbed by the crushing of the spherical body 15. The problem of disconnection due to variations is avoided.
【００２５】また、球状体１５は、未硬化の紫外線硬化
型樹脂１６を可撓性膜状壁物質１７と金属膜１８とで包
囲したものなので、これを圧壊する際に大きな荷重を加
える必要がなく、これにより基板１３の配線にダメージ
を与えることが防止される。さらに、溢出した紫外線硬
化型樹脂１６を硬化させる際には、紫外線１９線を照射
するだけなので、加熱による熱ストレスは非常に小さく
なるとともに、球状体１５に含まれる紫外線硬化型樹脂
１６の量を適宜選択すれば、圧壊により溢出した樹脂１
６で接続部分の全周を覆うことができ、接続部の保護と
電気的接続とを硬化させた紫外線硬化型樹脂１６で確保
することができる。Further, since the spherical body 15 is formed by surrounding the uncured ultraviolet curable resin 16 with the flexible film-like wall substance 17 and the metal film 18, it is necessary to apply a large load when crushing this. This prevents the wiring of the substrate 13 from being damaged. Furthermore, when curing the overflowing ultraviolet curable resin 16, only the ultraviolet ray 19 is irradiated, so that the thermal stress due to heating becomes very small and the amount of the ultraviolet curable resin 16 contained in the spherical body 15 is reduced. Resin 1 overflowed by crushing if selected appropriately
The entire circumference of the connection portion can be covered with 6, and the protection of the connection portion and the electrical connection can be secured by the cured ultraviolet curable resin 16.
【００２６】なお、上記実施例では、半導体チップ１１
をガラス基板１３に実装する場合を例示したが、本発明
の実施はこれに限定されることはなく、例えば、抵抗，
コンデンサーなどのチップ部品をプリント配線板に実装
する場合にも適用できる。また、球状体１５に封入する
樹脂も紫外線硬化型のものだけでなく、例えば、Ｘ線や
紫外線以外の波長で硬化する樹脂を用いることができ
る。さらに、球状体１５内に封入される樹脂に導電性フ
ィラーを混入して、電気抵抗を低下させてもよい。In the above embodiment, the semiconductor chip 11 is used.
However, the present invention is not limited to this, and, for example, a resistor,
It can also be applied when mounting chip parts such as capacitors on a printed wiring board. Further, the resin to be encapsulated in the spherical body 15 is not limited to the ultraviolet curable resin, and for example, a resin curable at a wavelength other than X-rays or ultraviolet rays can be used. Further, a conductive filler may be mixed in the resin sealed in the spherical body 15 to reduce the electric resistance.
【００２７】[0027]
【発明の効果】以上、実施例で詳細に説明したように、
この発明にかかるチップ部品の実装方法によれば、実装
される部品側の電極高にばらつきがあっても、このばら
つきが球状体の圧壊により吸収され、ばらつきに起因す
る接続の信頼性が低減されるとともに、球状体は小さな
荷重で圧壊されるので、基板側のダメージも低減するこ
とができる。また、球状体から溢出したエネルギー線硬
化型樹脂で接続部分を覆うので、接続部を保護するため
に工程が不要になるとともに、接続部の固定もエネルギ
ー線を照射するだけで行われるので、熱ストレスも大幅
に低減する。As described above in detail in the embodiments,
According to the chip component mounting method of the present invention, even if there is a variation in the electrode height on the component side to be mounted, this variation is absorbed by the collapse of the spherical body, and the reliability of the connection due to the variation is reduced. In addition, since the spherical body is crushed by a small load, damage on the substrate side can be reduced. Moreover, since the energy ray curable resin overflowing from the spherical body covers the connecting portion, a step is not required to protect the connecting portion, and the fixing of the connecting portion is performed only by irradiating the energy beam. Stress is also greatly reduced.
【図１】本発明にかかるチップ部品の実装方法の工程を
順に示す断面図である。1A to 1C are cross-sectional views sequentially showing steps of a chip component mounting method according to the present invention.
【図２】同実装方法で用いる球状体の一例を示す断面図
である。FIG. 2 is a cross-sectional view showing an example of a spherical body used in the mounting method.
【図３】従来のチップ部品の実装方法を示す断面図であ
る。FIG. 3 is a sectional view showing a conventional chip component mounting method.
１１ 半導体チップ １２ バンプ（第１の電極） １３ ガラス基板 １４ 第２の電極 １５ 球状体 １６ 紫外線硬化型樹脂 １７ 可撓性膜状壁物質 １８ 金属膜 １９ 紫外線 11 Semiconductor Chip 12 Bump (First Electrode) 13 Glass Substrate 14 Second Electrode 15 Spherical Body 16 UV Curable Resin 17 Flexible Membrane Wall Material 18 Metal Film 19 UV
───────────────────────────────────────────────────── フロントページの続き (72)発明者 北山 憂子 東京都港区虎の門１丁目７番12号 沖電気 工業株式会社内 ─────────────────────────────────────────────────── ─── Continued Front Page (72) Inventor Yuko Kitayama 1-7-12 Toranomon, Minato-ku, Tokyo Oki Electric Industry Co., Ltd.
Claims (2)
基板側に形成された第２の電極とを電気的に接続するチ
ップ部品の実装方法において、 未硬化のエネルギー線硬化型の樹脂を可撓性膜状壁物質
と金属膜とで包囲した球状体を前記第１の電極と第２の
電極との間に介装する工程と、 前記チップ部品を前記基板側に押圧して、前記球状体を
圧壊してその内部の前記樹脂を溢出させる工程と、 溢出した前記樹脂にエネルギー線を照射して硬化させる
工程とからなることを特徴とするチップ部品の実装方
法。1. A chip component mounting method for electrically connecting a first electrode formed on the chip component side and a second electrode formed on the substrate side, wherein an uncured energy ray curable resin is used. Interposing a spherical body surrounded by a flexible film-shaped wall substance and a metal film between the first electrode and the second electrode, and pressing the chip component to the substrate side, A method of mounting a chip component, comprising: a step of crushing the spherical body to overflow the resin therein, and a step of irradiating the overflowing resin with an energy ray to cure the resin.
硬化型樹脂であることを特徴とする請求項１記載のチッ
プ部品の実装方法。2. The mounting method for a chip component according to claim 1, wherein the energy ray curable resin is an ultraviolet curable resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3303639A JPH05144877A (en) | 1991-11-19 | 1991-11-19 | Mounting method of chip component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3303639A JPH05144877A (en) | 1991-11-19 | 1991-11-19 | Mounting method of chip component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05144877A true JPH05144877A (en) | 1993-06-11 |
Family
ID=17923420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3303639A Pending JPH05144877A (en) | 1991-11-19 | 1991-11-19 | Mounting method of chip component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05144877A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5468655A (en) * | 1994-10-31 | 1995-11-21 | Motorola, Inc. | Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules |
| US6365500B1 (en) * | 1994-05-06 | 2002-04-02 | Industrial Technology Research Institute | Composite bump bonding |
| US6580600B2 (en) | 2001-02-20 | 2003-06-17 | Nippon Soken, Inc. | Capacitance type humidity sensor and manufacturing method of the same |
-
1991
- 1991-11-19 JP JP3303639A patent/JPH05144877A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6365500B1 (en) * | 1994-05-06 | 2002-04-02 | Industrial Technology Research Institute | Composite bump bonding |
| US5468655A (en) * | 1994-10-31 | 1995-11-21 | Motorola, Inc. | Method for forming a temporary attachment between a semiconductor die and a substrate using a metal paste comprising spherical modules |
| US6580600B2 (en) | 2001-02-20 | 2003-06-17 | Nippon Soken, Inc. | Capacitance type humidity sensor and manufacturing method of the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100559914B1 (en) | Method and apparatuses for making z-axis electrical connections | |
| JP3150347B2 (en) | Method and apparatus for mounting electronic components on circuit board | |
| US5969461A (en) | Surface acoustic wave device package and method | |
| JP3329276B2 (en) | Interconnect structure with conductive adhesive | |
| JP3326382B2 (en) | Method for manufacturing semiconductor device | |
| JP2000188308A (en) | Underfill treating method for flip chip bonding and semiconductor device | |
| WO2003001596A1 (en) | Electronic device and method for manufacturing the same | |
| WO2007137073A2 (en) | Semiconductor device assembly with gap underfill | |
| JP3608536B2 (en) | Electronic component mounting method | |
| JP3552422B2 (en) | Ball grid array semiconductor device and its mounting method | |
| JP2001176924A (en) | Semiconductor device, bonding method, electronic equipment and bonding material | |
| JPH05144877A (en) | Mounting method of chip component | |
| JP3162068B2 (en) | Semiconductor chip mounting method | |
| JP2001257239A (en) | Manufacturing method of semiconductor device | |
| US6008072A (en) | Tape automated bonding method | |
| JP2555994B2 (en) | Flip chip mounting method | |
| JP2000058597A (en) | Method of mounting electronic component | |
| JP2010153670A (en) | Flip-chip mounting method and semiconductor device | |
| JP3923248B2 (en) | Method of mounting electronic component on circuit board and circuit board | |
| US6194780B1 (en) | Tape automated bonding method and bonded structure | |
| JPH05235096A (en) | Method of mounting electronic component on board | |
| JPH0888248A (en) | Face-down bonding method and connecting material using thereof | |
| JP2830824B2 (en) | Mounting method and mounting structure of work with bump | |
| JP4040734B2 (en) | Anisotropic conductive adhesive and electronic component mounting method using the same | |
| JPH05235213A (en) | Semiconductor device and method for forming heat radiating path of semiconductor device |