JPH0512986A - Surface conductive electron emitting element and image display device using it - Google Patents
Surface conductive electron emitting element and image display device using itInfo
- Publication number
- JPH0512986A JPH0512986A JP3181663A JP18166391A JPH0512986A JP H0512986 A JPH0512986 A JP H0512986A JP 3181663 A JP3181663 A JP 3181663A JP 18166391 A JP18166391 A JP 18166391A JP H0512986 A JPH0512986 A JP H0512986A
- Authority
- JP
- Japan
- Prior art keywords
- electron
- emitting
- image display
- display device
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/316—Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
- H01J2201/3165—Surface conduction emission type cathodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Landscapes
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、冷陰極型の電子放出部
を複数有した電子放出素子及び該素子を用いた画像表示
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron-emitting device having a plurality of cold-cathode type electron-emitting portions and an image display device using the device.
【０００２】[0002]
【従来の技術】従来、簡単な構造で電子の放出が得られ
る素子として、例えばエム アイ エリンソン（Ｍ．
Ｉ．Ｅｌｉｎｓｏｎ）等によって発表された冷陰極素子
が知られている［ラジオ エンジニアリング エレクト
ロン フィジックス（ＲａｄｉｏＥｎｇ．Ｅｌｅｃｔｒ
ｏｎ Ｐｈｙｓ．）第１０巻，１２９０〜１２９６頁，
１９６５年］。2. Description of the Related Art Conventionally, as a device which can emit electrons with a simple structure, for example, MI Elinson (M.
I. A cold cathode device announced by Elinson et al. Is known [Radio Engineering Electron Physics (Radio Eng.
on Phys. ) Volume 10, pp. 1290-1296,
1965].
【０００３】これは、基板上に形成された小面積の薄膜
に、膜内に平行に電流を流すことにより、電子放出が生
ずる現象を利用するもので、一般には表面伝導形電子放
出素子と呼ばれている。この表面伝導形電子放出素子と
しては、前記エリンソン等により開発されたＳｎＯ
2（Ｓｂ）薄膜を用いたもの、Ａｕ薄膜によるもの［ジ
ー・ディトマー“スイン ソリド フィルムス”（Ｇ．
Ｄｉｔｔｍｅｒ：“Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍ
ｓ”），９巻 ３１７頁，（１９７２年）］、ＩＴＯ薄
膜によるもの［エム ハートウェル アンド シージー
フォンスタッド“アイイーイーイートランス“イーディ
ーコンファレン（Ｍ．Ｈａｒｔｗｅｌｌ ａｎｄ Ｃ．
Ｇ．Ｆｏｎｓｔａｄ；“ＩＥＥＥ Ｔｒａｎｓ．ＥＤ
Ｃｏｎｆ．”）５１９頁，（１９７５年）］、カーボン
薄膜によるもの［荒木久他：“真空”第２６巻，第１
号，２２頁，（１９８３年）］などが報告されている。This utilizes a phenomenon in which a thin film having a small area formed on a substrate causes electron emission by causing a current to flow in the film in parallel, and is generally called a surface conduction electron-emitting device. Has been. As the surface conduction electron-emitting device, SnO developed by Elinson et al.
2 Using a (Sb) thin film, using an Au thin film [G. Ditmer "Sin Solid Films" (G.
Dittmer: "Thin Solid Film"
s "), Vol. 9, p. 317, (1972)], by an ITO thin film [M Hartwell and Siegee von Stade" EEE Trans "Edie Conferen (M. Hartwell and C.
G. Fonstad; “IEEE Trans.ED
Conf. ") 519, (1975)], by carbon thin film [Hiraki Araki et al .:" Vacuum ", Vol. 26, No. 1]
No., p. 22, (1983)] and the like.
【０００４】これらの表面伝導形電子放出素子の典型的
な素子構成を図７に示す。同図において、１及び２は電
気的接続を得るための電極、１２は電子放出材料で形成
される薄膜、４は基板、５は電子放出部を示す。従来、
これらの表面伝導形電子放出素子においては、電子放出
を行う前に予めフォーミングと呼ばれる通電加熱処理に
よって電子放出部を形成する。即ち、前記電極１と電極
２の間に電圧を印加することにより、薄膜１２に通電
し、これにより発生するジュール熱で薄膜１２を局所的
に破壊、変形もしくは変質せしめ、電気的に高抵抗な状
態にした電子放出部５を形成することにより電子放出機
能を得ている。FIG. 7 shows a typical device configuration of these surface conduction electron-emitting devices. In the figure, 1 and 2 are electrodes for obtaining electrical connection, 12 is a thin film formed of an electron emitting material, 4 is a substrate, and 5 is an electron emitting portion. Conventionally,
In these surface conduction electron-emitting devices, an electron-emitting portion is formed in advance by an electric heating process called forming before the electron emission. That is, by applying a voltage between the electrode 1 and the electrode 2, the thin film 12 is energized, and the thin film 12 is locally destroyed, deformed or deteriorated by the Joule heat generated thereby, and the electrical resistance is high. The electron emission function is obtained by forming the electron emission portion 5 in the state.
【０００５】なお、電気的に高抵抗状態とは、薄膜１２
の一部に、０．５μｍ〜５μｍの亀裂を有し、かつ亀裂
内が、いわゆる島構造を有する不連続状態膜をいう。島
構造とは一般に数十Åから数μｍ径の微粒子が基板４に
あり、各微粒子は空間的に不連続で電気的に連続な膜を
いう。The electrically high resistance state means the thin film 12
Is a discontinuous state film having a crack of 0.5 μm to 5 μm in a part thereof and having a so-called island structure inside the crack. The island structure generally refers to a film in which fine particles having a diameter of several tens of μm to several μm are present on the substrate 4, and each fine particle is spatially discontinuous and electrically continuous.
【０００６】従来、表面伝導形電子放出素子は、上述高
抵抗不連続膜に電極１，２により電圧を印加し、素子表
面に電流を流すことにより、上述微粒子より電子を放出
せしめるものである。Conventionally, in the surface conduction electron-emitting device, a voltage is applied to the high resistance discontinuous film by the electrodes 1 and 2 and a current is caused to flow on the surface of the device so that electrons are emitted from the fine particles.
【０００７】しかしながら、上記の様な従来の通電加熱
によるフォーミング素子には次のような問題点があっ
た。
１）電子放出部となる海島構造の設計が不可能なため、
素子の改良が難しく、素子間のばらつきも生じやすい。
２）フォーミング工程の際に生じるジュール熱が大きい
為、基板が破壊しやすくマルチ化が難しい。
３）島の材料が金、銀、ＳｎＯ2、ＩＴＯ等に限定され
た仕事関数の小さい材料が使えないため、大電流を得る
ことができない。However, the conventional forming element by the above-mentioned energization heating has the following problems. 1) Since it is impossible to design the sea-island structure that will be the electron-emitting part,
It is difficult to improve the elements, and variations among the elements are likely to occur. 2) Since the Joule heat generated during the forming process is large, it is easy to break the substrate, and it is difficult to make multiple substrates. 3) Since a material having a small work function such as gold, silver, SnO 2 or ITO cannot be used as the island material, a large current cannot be obtained.
【０００８】以上のような問題点があるため、表面伝導
形電子放出素子は、素子構造が簡単であるという利点が
あるにも拘わらず、産業上積極的に応用されるには至っ
ていなかった。Due to the above problems, the surface conduction electron-emitting device has not been industrially applied positively, although it has the advantage that the device structure is simple. .
【０００９】本発明者等は上記問題点を鑑みて検討した
結果、特願昭６３−１０７５７０号、特願昭６３−１１
０４８０号において、電極間に微粒子膜を配置しこれに
通電処理を施すことにより電子放出部を設ける新規な表
面伝導形電子放出素子を提案した。この新規な電子放出
素子の構成図を図８に示す。同図において、１及び２は
電極、３は微粒子膜、５は電子放出部、４は基板であ
る。The present inventors have studied in view of the above problems, and as a result, have found that Japanese Patent Application Nos. 63-107570 and 63-11.
In 0480, a novel surface conduction electron-emitting device in which a fine particle film is arranged between electrodes and an electron-emitting portion is provided by subjecting it to an electric current treatment is proposed. A block diagram of this novel electron-emitting device is shown in FIG. In the figure, 1 and 2 are electrodes, 3 is a fine particle film, 5 is an electron emitting portion, and 4 is a substrate.
【００１０】この電子放出素子の特徴としては次のよう
なことが挙げられる。
１）微粒子膜に非常に少ない電流を流すことで電子放出
部を形成できるので素子劣化のない素子が形成でき、さ
らに電極の形状を任意に設計できる。
２）微粒子膜を形成する微粒子自身が電子放出の構成材
となる為、微粒子の材料や形状等の設計が可能となり、
電子放出特性を変えることができる。
３）素子の構成材である基板や電極の材料の選択性が広
がる。The characteristics of this electron-emitting device are as follows. 1) Since an electron emitting portion can be formed by passing a very small current through the fine particle film, an element without element deterioration can be formed, and the shape of the electrode can be arbitrarily designed. 2) Since the fine particles forming the fine particle film themselves are constituent materials for electron emission, it is possible to design the material and shape of the fine particles,
The electron emission characteristics can be changed. 3) The selectivity of the materials of the substrate and the electrodes, which are the constituent materials of the element, is expanded.
【００１１】一方、縦横等間隔で面状に複数の電子源を
展開した電子放出装置が知られている（特開昭５６−２
８４４５号）。しかしながら、残念なことに、上記電子
放出装置では、電子源としてコイル状ヒータ形式の熱カ
ソードを用いているため、電子放出効率が低く、しかも
構造が複雑化してしまい、装置の消費電力や製造コスト
が莫大なものとなることから、実用化されるまでには至
っていない。On the other hand, there is known an electron emitting device in which a plurality of electron sources are spread out in a plane at equal intervals in the vertical and horizontal directions (Japanese Patent Laid-Open No. 56-2).
8445). However, unfortunately, in the electron emission device, since the coiled heater type hot cathode is used as the electron source, the electron emission efficiency is low and the structure is complicated, and the device power consumption and manufacturing cost are reduced. Since it will be enormous, it has not been put to practical use.
【００１２】[0012]
【発明が解決しようとする課題】しかしながら、上記従
来例に示したように、従来の通電加熱によるフォーミン
グ処理によって製造された従来型表面伝導形電子放出素
子には、以下のような問題点があった。
．電子放出部の構造設計が困難なため、素子の改良が
難しく、電子放出特性，電子放出部の位置など素子間の
ばらつきを生じやすい。
．フォーミング工程によって生じるジュール熱が大き
いため、電子放出特性の劣化，基板破壊が生じやすい。However, as shown in the above-mentioned conventional example, the conventional surface conduction electron-emitting device manufactured by the conventional forming process by electric heating has the following problems. It was ． Since it is difficult to design the structure of the electron emission portion, it is difficult to improve the element, and variations in the element such as the electron emission characteristics and the position of the electron emission portion are likely to occur. ． Since the Joule heat generated in the forming process is large, the electron emission characteristics are deteriorated and the substrate is easily broken.
【００１３】また、従来実用に供されてきた通電加熱に
より放出電子を得る熱電子源は、電子放出特性が温度分
布の影響を極めて強く受けるため、電子源からの電子放
出量が異なり、その結果場所によって蛍光体の発光輝度
が異なる、いわゆる表示むらを生じるなど、大面積にわ
たって均一な特性を得ることが困難であり、線状あるい
は面状に展開した電子放出素子及び装置へは応用されて
いない。Further, in a thermoelectron source which has been conventionally used for obtaining emitted electrons by electric heating, the electron emission characteristics are very strongly influenced by the temperature distribution, so that the electron emission amount from the electron source is different, and as a result, It is difficult to obtain uniform characteristics over a large area, such as the emission brightness of the phosphors differing from place to place, or so-called display unevenness, and it has not been applied to electron-emitting devices and devices developed in a linear or planar shape. .
【００１４】さらに、上記従来型の通電加熱を施す表面
伝導形電子放出素子や、通電し加熱する熱電子源を電気
的に直列に配置，構成した場合には、以下のような問題
点があった。
．電気的に直列に接続された２ケ所の電子放出部のう
ちのどちらか一方のみ、あるいは、複数個の内の１ケ所
のみから電子を放出させることができない。
．直列に接続することによって各電子放出部で駆動電
圧が分圧されるため、駆動電圧が高くなり、消費電力が
増大する。
．各電子放出部での電圧降下が起るため、素子に印加
された電圧にばらつきが生じ、電子放出量が均一になら
ない。そのため、画像表示装置等に応用した場合、場所
によって蛍光体の発光輝度が異なり表示むらを生じる。Further, when the conventional surface conduction electron-emitting device for electrically heating and the thermionic source for electrically heating are arranged and configured electrically in series, there are the following problems. It was ． Electrons cannot be emitted from only one of the two electron-emitting portions electrically connected in series, or from only one of the plurality of electron-emitting portions. ． By connecting in series, the driving voltage is divided in each electron emitting portion, so that the driving voltage becomes high and the power consumption increases. ． Since a voltage drop occurs in each electron emitting portion, the voltage applied to the element varies, and the amount of electron emission is not uniform. Therefore, when applied to an image display device or the like, the emission brightness of the phosphor varies depending on the location, and display unevenness occurs.
【００１５】すなわち、本発明は上述した問題点を解決
し得る電子放出素子及び該素子を用いた画像表示装置を
提供することにある。That is, the present invention is to provide an electron-emitting device capable of solving the above-mentioned problems and an image display device using the device.
【００１６】[0016]
【課題を解決するための手段及び作用】上記目的を達成
するための本発明の構成について、以下に述べる。The structure of the present invention for achieving the above object will be described below.
【００１７】第１に、絶縁性を有する基板上に一対の電
極と該一対の電極を電気的に接続する微粒子膜からなる
電子放出部を有する表面伝導形電子放出素子において、
該素子の電子放出部が、電気的に直列に複数（少なくと
も２個以上）接続され、かつ、該複数の電子放出部のう
ち電子を放出する部位を電気的に切り換える手段を有す
る表面伝導形電子放出素子、としている点にある。First, in a surface conduction electron-emitting device having an electron-emitting portion composed of a pair of electrodes and a fine particle film electrically connecting the pair of electrodes on an insulating substrate,
A plurality of (at least two or more) electron-emitting portions of the device are electrically connected in series, and a surface conduction electron having means for electrically switching the electron-emitting portion of the plurality of electron-emitting portions. Emitting element, which is the point.
【００１８】第２に、前記第１に記載の切り換え手段
が、導電性部材と熱により構成されている点にある。Secondly, the switching means described in the first is composed of a conductive member and heat.
【００１９】第３に、前記第１に記載の表面伝導形電子
放出素子と、該素子から放出される電子ビームを変調又
は加速する電極と、電子ビームの照射により発光する蛍
光面部材とを、少なくとも内装する外囲器を有する画像
表示装置であって、該外囲器に熱源光を透過する領域を
有する画像表示装置、としている点にある。Thirdly, the surface conduction electron-emitting device according to the first aspect, an electrode for modulating or accelerating an electron beam emitted from the device, and a phosphor screen member emitting light by irradiation of the electron beam, An image display device having at least an interior envelope, which is an image display device having a region for transmitting heat source light to the envelope.
【００２０】第４に、前記第３に記載の透過領域が、前
記蛍光面部材中に位置する点にある。Fourth, the transmissive region described in the third is located in the phosphor screen member.
【００２１】すなわち、本発明の基本的技術思想は、一
対の電極を電気的に接続する微粒子膜からなる電子放出
部を、電気的に直列に複数接続した表面伝導形電子放出
素子の複数の電子放出部を、導電性部材と熱、熱源を透
過する領域とを設けることで、上述問題点を解決するも
のである。That is, the basic technical idea of the present invention is that a plurality of electrons of a surface conduction electron-emitting device are formed by electrically connecting a plurality of electron-emitting portions, which are fine particle films electrically connecting a pair of electrodes, in series. The emission part is provided with a conductive member and a region that transmits heat and a heat source, thereby solving the above-mentioned problems.
【００２２】尚、本発明に用いる微粒子膜としては、粒
径が十数Åから数μｍの導電性微粒子の膜、あるいはこ
れら導電性微粒子が分散されたカーボン薄膜等が挙げら
れる。その材料はＰｄ，Ａｇ，Ａｕ，Ｔｉ等の金属、Ｐ
ｄＯ，ＳｎＯ2等の酸化物導電体等導電性材料であれば
どれを用いても構わない。そしてこれらの膜はガスデポ
ジション法や分散塗布法等により電極間に形成される。Examples of the fine particle film used in the present invention include a conductive fine particle film having a particle diameter of a few dozen to several μm, or a carbon thin film in which these conductive fine particles are dispersed. The material is a metal such as Pd, Ag, Au, Ti, P
Any conductive material such as an oxide conductor such as dO or SnO 2 may be used. Then, these films are formed between the electrodes by a gas deposition method, a dispersion coating method, or the like.
【００２３】次に、本発明の基本構成である、電子放出
部が電気的に複数直列に接続され、かつ、電子放出に寄
与する電子放出部を導電性部材と熱により切り換える手
段を有する表面導電形電子放出素子について、その構成
及び作用を図面を用いて説明する。Next, the basic structure of the present invention, a plurality of electron-emitting portions are electrically connected in series, and the surface-conducting means has means for switching the electron-emitting portions contributing to electron emission by a conductive member and heat. The configuration and action of the electron-emitting device will be described with reference to the drawings.
【００２４】図１は、本発明の一実施態様を示す素子構
成図である。FIG. 1 is a device block diagram showing an embodiment of the present invention.
【００２５】同図に於いて、１及び２は電極、３は電子
放出材料からなる微粒子膜、４は絶縁性基板、５は電子
放出部、６は透明板，透明電極，蛍光体からなる蛍光体
ターゲット、７は電子写真領域（発光部）、８は導電性
部材である。In the figure, 1 and 2 are electrodes, 3 is a fine particle film made of an electron emitting material, 4 is an insulating substrate, 5 is an electron emitting portion, 6 is a transparent plate, a transparent electrode, and a fluorescent substance made of a phosphor. A body target, 7 is an electrophotographic region (light emitting portion), and 8 is a conductive member.
【００２６】本発明の電子放出素子は、図１，図２なら
びに図３で示すように、複数個（２個以上）の電子放出
部５を電気的に直列に接続配置して１つの電子放出素子
（単位素子）を構成し、かつ、前記各々の電子放出部５
近傍で、各々の電子放出部を挟む少なくとも一方の電極
に接して導電性部材８を配置した構成からなる。In the electron-emitting device of the present invention, as shown in FIGS. 1, 2 and 3, a plurality (two or more) of electron-emitting portions 5 are electrically connected in series to form one electron-emitting device. An element (unit element), and each of the electron emitting portions 5
In the vicinity, the conductive member 8 is arranged in contact with at least one electrode sandwiching each electron emitting portion.
【００２７】ここで、前記電子放出部５となる電極１，
２の間隔は、０．１μｍ〜１００μｍが望ましく、一般
には０．５μｍ〜１０μｍが実用的である。さらに、隣
接する電子放出部５の間隔は、０．５μｍ〜２ｍｍが望
ましく、一般には１μｍ〜１ｍｍが実用的である。ま
た、導電性部材８としては、熱により溶解する物質であ
ればどの材料を用いても構わず、画像表示装置の製造工
程で発生する封着温度以上で、かつ、前記電極１，２、
微粒子膜３、基板４及び構成部材の融点より低い融点の
材料が好ましい。さらに、導電性部材８の配置場所は、
それが溶解して電子放出部５に到達する位置にあれば、
どのような距離にあってもかまわない。Here, the electrode 1, which becomes the electron emission portion 5,
The interval of 2 is preferably 0.1 μm to 100 μm, and generally 0.5 μm to 10 μm is practical. Further, the interval between the adjacent electron emitting portions 5 is preferably 0.5 μm to 2 mm, and generally 1 μm to 1 mm is practical. Further, any material may be used as the conductive member 8 as long as it is a substance that is melted by heat, and the temperature is equal to or higher than the sealing temperature generated in the manufacturing process of the image display device and the electrodes 1, 2,
A material having a melting point lower than that of the fine particle film 3, the substrate 4, and the constituent members is preferable. Furthermore, the location of the conductive member 8 is
If it is at a position where it melts and reaches the electron emission portion 5,
It doesn't matter what distance it is.
【００２８】以上のような、複数個の電子放出部５に設
けられた電子放出材料からなる微粒子膜３の通電処理の
方法は、微粒子膜３を通電加熱により、その一部を高抵
抗化して電子放出部を形成するものや、微粒子膜３に通
電することによりその一部を低抵抗化して電子放出部５
を形成するものがあるが、いずれを用いても構わず、少
なくとも電子放出部５の複数個分の回数以上、前記処理
を施すことにより、全ての電子放出材料からなる微粒子
膜の構造が変わり、上述したような不連続な電子放出部
５が形成される。As described above, the method of energizing the fine particle film 3 made of the electron emitting material provided in the plurality of electron emitting portions 5 is performed by heating the fine particle film 3 with electricity to increase a part of the resistance. A part of the electron emitting part 5 is formed to have a low resistance by energizing the fine particle film 3 or the part forming the electron emitting part 5.
However, any of them may be used, and the structure of the fine particle film made of all the electron-emitting materials is changed by performing the treatment at least a plurality of times of the electron-emitting portion 5, The discontinuous electron emission portion 5 as described above is formed.
【００２９】次に、前記通電処理を施した表面伝導形電
子放出素子に駆動用の電圧を印加すると、複数個の電子
放出部５のうち、１ケ所の電子放出部５のみ電子を放出
する作用効果を得た。実際、どのようにして１ケ所の電
子放出部５のみから電子を放出させるのかは不明である
が、発明者等は先に提案した新規な表面伝導形電子放出
素子固有の特性であるものと推測している。Next, when a driving voltage is applied to the surface conduction electron-emitting device that has been subjected to the energization process, only one electron-emitting part 5 among the plurality of electron-emitting parts 5 emits electrons. Got the effect. Actually, it is unknown how the electrons are emitted from only one electron-emitting portion 5, but the inventors presume that it is a characteristic peculiar to the novel surface conduction electron-emitting device previously proposed. is doing.
【００３０】また、図１に示されるように、表面伝導形
電子放出素子による電子照射領域（発光部）７は、その
特性上Ｌ＞Ｗとなった楕円形に近い形状となる。Further, as shown in FIG. 1, the electron irradiation region (light emitting portion) 7 of the surface conduction electron-emitting device has a shape close to an ellipse with L> W in terms of its characteristics.
【００３１】次に、前記導電性部材８を、熱源により発
熱，溶解させて電子放出部５を短絡させることにより、
電子放出部５を切り換えることができる。Next, the conductive member 8 is heated and melted by a heat source to short-circuit the electron emitting portion 5,
The electron emitting portion 5 can be switched.
【００３２】前述した複数の電子放出素子を設けた画像
表示装置において、本発明の電子放出素子を用いれば、
容易に電子放出部の切り換えが可能で、表示むらのない
良好な画像が形成される。If the electron-emitting device of the present invention is used in the above-mentioned image display device provided with a plurality of electron-emitting devices,
The electron emitting portion can be easily switched, and a good image with no display unevenness can be formed.
【００３３】[0033]
【実施例】以下、本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.
【００３４】（実施例１）図１は、本実施例の素子構成
図であり、図２はその製造方法を示した説明図である。(Embodiment 1) FIG. 1 is a diagram showing the structure of an element of this embodiment, and FIG. 2 is an explanatory view showing the manufacturing method thereof.
【００３５】先ず、図１及び図２に基づいて、本実施例
に係る電子放出素子の製造方法を説明する。
．絶縁性基板４として石英基板を用い、有機溶剤等に
より充分洗浄し、真空蒸着技術，フォトリソグラフィ技
術により、電極１，２を形成する。ここで、電極１，２
の材料としては、導電性を有するものであればどのよう
なものであっても構わないが、本実施例ではＮｉ金属を
用いて形成した。First, a method of manufacturing an electron-emitting device according to this embodiment will be described with reference to FIGS. ． A quartz substrate is used as the insulating substrate 4, sufficiently washed with an organic solvent or the like, and the electrodes 1 and 2 are formed by a vacuum deposition technique and a photolithography technique. Here, the electrodes 1 and 2
Although any material may be used as the material as long as it has conductivity, in this embodiment, it is formed by using Ni metal.
【００３６】また、かかる電極１と２の間隔は、実用的
には０．５μｍ〜２０μｍに形成されることが望まし
く、本実施例では６μｍ間隔とし、膜厚は１０００Åと
した。
．次に、導電性部材８を形成する。導電性部材８の材
料としては、導電性を有しかつ熱により溶解するもので
あればどのようなものであっても構わないが、本素子を
形成する構成部材の融点より低い融点の材料が望まし
く、さらに画像表示装置を形成する際の封着温度より高
い融点の材料が実用的であり、本実施例では液相温度が
約３２２℃のＳｎ２％，Ｐｄ９８％からなるはんだ材料
を用い、真空蒸着技術，フォトリソグラフィ技術により
形成した。The distance between the electrodes 1 and 2 is preferably 0.5 μm to 20 μm for practical use. In this embodiment, the distance is 6 μm and the film thickness is 1000 Å. ． Next, the conductive member 8 is formed. Any material may be used as the material of the conductive member 8 as long as it has conductivity and can be melted by heat. However, a material having a melting point lower than the melting point of the constituent member forming the present element is used. Desirably, a material having a melting point higher than the sealing temperature when forming the image display device is practical, and in this embodiment, a solder material having a liquidus temperature of about 322 ° C. of Sn2% and Pd98% is used, and a vacuum is used. It was formed by vapor deposition technology and photolithography technology.
【００３７】また、導電性部材８と電極１，２の間隔は
どのような距離でも構わないが、導電性部材８が溶解し
て電極間に到達しやすい間隔が望ましく、本実施例では
１０μｍ間隔とし、膜厚は２μｍとした。
．次に、有機パラジウムを電極１と２の間に分散塗布
する。有機パラジウムは奥野製薬（株）ＣＣＰ−４２３
０を用いた。微粒子を分散したくないところにはテープ
又はレジスト膜を設け、その後ディッピング法又はスピ
ナー法で有機パラジウムを塗布する。そして、テープ又
はレジスト膜を剥離することにより、所定の位置に微粒
子膜を形成し、それを３００℃で１時間焼成した後、さ
らに有機パラジウムを分散し、パラジウムと酸化パラジ
ウムの混合した微粒子膜３を形成する。Although the distance between the conductive member 8 and the electrodes 1 and 2 may be any distance, it is desirable that the conductive member 8 is melted and easily reaches between the electrodes. In the present embodiment, the distance is 10 μm. And the film thickness was 2 μm. ． Next, organic palladium is dispersed and applied between the electrodes 1 and 2. Organo-palladium is Okuno Pharmaceutical Co., Ltd. CCP-423
0 was used. A tape or a resist film is provided in a place where fine particles are not desired to be dispersed, and then organic palladium is applied by a dipping method or a spinner method. Then, the tape or the resist film is peeled off to form a fine particle film at a predetermined position, and the fine particle film is baked at 300 ° C. for 1 hour, and then organic palladium is further dispersed, and a fine particle film 3 in which palladium and palladium oxide are mixed. To form.
【００３８】かかる微粒子膜３の幅はどのような値のも
のでも構わないが、本実施例では３００μｍとした。こ
のとき、パラジウムと酸化パラジウムの微粒子の径は共
に１０Å〜１５０Åであったが、本発明はこれに限るも
のではない。
．次に、電極１をマイナス側、電極２をプラス側にな
るように電源に接続し、微粒子膜３に通電処理を２回行
い、電極１，２間に電子放出部５を形成した。The width of the fine particle film 3 may be any value, but in this embodiment, it is 300 μm. At this time, the diameters of the fine particles of palladium and palladium oxide were both 10Å to 150Å, but the present invention is not limited to this. ． Next, the electrode 1 was connected to the power source so that the negative side was on the positive side, and the electrode 2 was on the positive side, and the fine particle film 3 was subjected to the energization treatment twice to form the electron emitting portion 5 between the electrodes 1 and 2.
【００３９】ここで、通電処理前の微粒子膜の厚さは数
十Å〜２００Åが実用的であるが、これに限るものでは
ない。なお、このときの微粒子膜のシート抵抗は１０3
〜１０10Ω／□程度である。また、微粒子膜３の膜厚
は、電極間でほぼ均一であると考えられる。Here, the thickness of the fine particle film before the energization treatment is practically several tens Å to 200 Å, but the thickness is not limited to this. The sheet resistance of the fine particle film at this time is 10 3
It is about 10 10 Ω / □. Further, it is considered that the film thickness of the fine particle film 3 is substantially uniform between the electrodes.
【００４０】本実施例では、通電処理において電流の流
れる向きを電極２から電極１側にしたが、本実施例にお
いては電流の流れる向きに関係なく、再現良く上述した
位置に電子放出部５を形成できる。
．次に、上記製造方法により形成した電子放出素子の
電子放出部を切り換えるため、赤外光９を導電性部材８
に照射して溶解し、電極１，２間を短絡させて、電子放
出に寄与する電子放出部の切り換えを行った。In the present embodiment, the direction of current flow is set from the electrode 2 to the electrode 1 side in the energization process, but in the present embodiment, the electron emitting portion 5 is reproducibly located at the above-mentioned position regardless of the direction of current flow. Can be formed. ． Next, in order to switch the electron-emitting portion of the electron-emitting device formed by the above manufacturing method, the infrared light 9 is applied to the conductive member 8
Then, the electrodes 1 and 2 were melted, and the electrodes 1 and 2 were short-circuited to switch the electron emission portion that contributes to electron emission.
【００４１】ここで用いた赤外光９は、熱源となるＣＯ
2レーザー，ＣＯレーザー，ＹＡＧレーザー，ガラスレ
ーザー，等の赤外線レーザー、および半導体レーザー等
どれを用いても構わないが、導電性部材８の吸収波長と
整合の取れた波長を有するものが好ましい。The infrared light 9 used here is CO, which is a heat source.
An infrared laser such as a 2 laser, a CO laser, a YAG laser, a glass laser, or a semiconductor laser may be used, but a laser having a wavelength matched with the absorption wavelength of the conductive member 8 is preferable.
【００４２】また、本実施例の電子放出素子を、電子放
出部が直列に複数個接続配置され、かつ、導電性部材８
が設けていない従来の電子放出素子と比較したところ、
電子放出量及び電子放出効率において、修正工程に何ら
関係することなく、ほぼ同等の値が得られた。In the electron-emitting device of this embodiment, a plurality of electron-emitting portions are connected and arranged in series, and the conductive member 8 is used.
When compared with the conventional electron-emitting device that is not provided,
About the electron emission amount and the electron emission efficiency, almost the same values were obtained without any relation to the correction process.
【００４３】本実施例の電子放出素子は、外部から熱源
を照射するだけで、容易に電子放出に寄与する電子放出
部の切り換えを行うことができた。In the electron-emitting device of this embodiment, the electron-emitting portion contributing to electron emission can be easily switched by simply irradiating the heat source from the outside.
【００４４】このように、電子放出部を容易に切り換え
る構造を有する電子放出素子にあっては、応用を考える
と非常に重要な意味がある。例えば、素子製造時に電子
放出部５に欠陥が発生しても容易に切り換えることがで
き、まったく問題なく電子放出を得られる。また、前記
電子放出素子を画像表示装置等に用いても、電子放出部
の切り換えを簡略に行うことができる。よって、本実施
例の素子は実用的に非常に有効なものである。As described above, the electron-emitting device having a structure for easily switching the electron-emitting portion has a very important meaning in consideration of application. For example, even if a defect occurs in the electron-emitting portion 5 during manufacturing of the device, it can be easily switched, and electron emission can be obtained without any problem. Further, even when the electron-emitting device is used in an image display device or the like, switching of the electron-emitting portion can be easily performed. Therefore, the device of this example is very effective in practice.
【００４５】さらに、２ケ所の電子放出部から電子放出
を得られることから、一方が故障した場合他方を使用す
ることで約２倍の耐久性を得ることができた。Further, since the electron emission can be obtained from the two electron emission portions, it is possible to obtain about twice the durability by using the other when one fails.
【００４６】（実施例２）図３は本実施例の素子構成図
である。本実施例は実施例１とほぼ同等の形状を成すも
のであるが、微粒子膜３をガスデポジション法で作製し
たものである。先ず、かかる素子の製造方法について説
明する。
．実施例１−に同じ。
．実施例１−に同じ。(Embodiment 2) FIG. 3 is a structural diagram of the element of this embodiment. This example has a shape substantially similar to that of Example 1, but the fine particle film 3 is produced by the gas deposition method. First, a method of manufacturing such an element will be described. ． Same as Example 1-. ． Same as Example 1-.
【００４７】但し、導電性部材８を電極１，２の一部に
形成し、導電性部材８と微粒子膜３までの距離を１０μ
ｍとし、膜厚は２μｍとした。
．次に、微粒子膜３を所定の位置に形成する為に金属
マスクを電極１と２の間に配置し、ガスデポジション法
で微粒子膜３を形成した。その材質は、Ａｕ，Ａｇ，Ｔ
ｉ，Ｓｎ，Ｐｄ等の金属またはその他のどのような導電
性微粒子を用いても構わないが、本実施例ではＰｂを用
いた。また、その粒径は５０〜１５０Åであったが、本
実施例はこれによるものではない。
．実施例１−に同じ。
．実施例１−に同じ。However, the conductive member 8 is formed on a part of the electrodes 1 and 2, and the distance between the conductive member 8 and the fine particle film 3 is 10 μm.
m and the film thickness was 2 μm. ． Next, a metal mask was placed between the electrodes 1 and 2 in order to form the fine particle film 3 at a predetermined position, and the fine particle film 3 was formed by the gas deposition method. The material is Au, Ag, T
Although metals such as i, Sn, and Pd or any other conductive fine particles may be used, Pb is used in this embodiment. The particle size was 50 to 150Å, but this is not the case in the present embodiment. ． Same as Example 1-. ． Same as Example 1-.
【００４８】以上の工程により製造された電子放出素子
は、実施例１と同様な検討をした結果、同等な効果があ
った。As a result of the same examination as in Example 1, the electron-emitting device manufactured by the above steps had the same effect.
【００４９】（実施例３）図４は本実施例の素子構成図
である。本実施例は、同図のごとく直列に接続された３
ケ所の電子放出部５を有する以外は、実施例１とほぼ同
等の形状を成すものである。また、本実施例に係る素子
の製造に際しては、通電処理を３回行った以外は、実施
例１と同様な方法で作成した。(Embodiment 3) FIG. 4 is a block diagram of the element of this embodiment. In this embodiment, as shown in FIG.
The structure is almost the same as that of the first embodiment except that the electron-emitting portions 5 are provided at several places. Further, in manufacturing the element according to this example, the device was manufactured in the same manner as in Example 1 except that the energization treatment was performed three times.
【００５０】上記のごとく構成された電子放出素子に電
圧を印加して電子放出を行ったところ、直列に構成され
た３ケ所の電子放出部５のうちどれか一ケ所から電子放
出を得た。さらに、実施例１と同様の方法で電子放出部
を切り換え、電子放出をしていない２ケ所の電子放出部
５から電子放出を得た。When a voltage was applied to the electron-emitting device constructed as described above to emit electrons, electron emission was obtained from any one of the three electron-emitting portions 5 formed in series. Further, the electron emission portions were switched in the same manner as in Example 1, and electron emission was obtained from two electron emission portions 5 which did not emit electrons.
【００５１】さらに、熱源に赤外光を用いて電子放出部
近傍の導電性部材８に照射し、発熱，溶解させ、電子放
出部の切り換えを行った。Further, infrared rays were used as a heat source to irradiate the conductive member 8 in the vicinity of the electron emitting portion to generate heat and melt it, and the electron emitting portion was switched.
【００５２】以上のごとく形成された電子放出素子は、
実施例１と同様な検討をした結果、同等な効果があっ
た。The electron-emitting device formed as described above is
As a result of the same examination as in Example 1, the same effect was obtained.
【００５３】（実施例４）図５及び図６は、本実施例の
画像表示装置を示す構成図で、特に図５は本実施例の特
徴である蛍光体ターゲツット６を裏面から見た構成図で
ある。本実施例の面状電子源は、実施例２の電子放出素
子を複数配列したもので、特に電極１と電極２の間に電
子放出素子を並列に配置した線電子源を複数本基板に規
則正しく設けたものである。(Embodiment 4) FIGS. 5 and 6 are configuration diagrams showing an image display device of the present embodiment, and in particular, FIG. 5 is a configuration view of the phosphor target 6 which is a feature of the present embodiment as seen from the back side. Is. The planar electron source of the present embodiment has a plurality of electron-emitting devices arranged in the second embodiment. In particular, a plurality of linear electron sources having electron-emitting devices arranged in parallel between electrodes 1 and 2 are regularly arranged on a substrate. It is provided.
【００５４】図５，図６において、６は透明板（ガラス
板），蛍光体，メタルバックからなる蛍光体ターゲッ
ト、１３は透明板のみからなる蛍光体ターゲットの一
部、７は蛍光体の輝点（電子照射領域）、１０はグリッ
ド電極、１１は電子通過孔である。In FIGS. 5 and 6, 6 is a phosphor target composed of a transparent plate (glass plate), phosphor and metal back, 13 is a part of the phosphor target composed of only the transparent plate, and 7 is the brightness of the phosphor. Points (electron irradiation areas), 10 are grid electrodes, and 11 are electron passage holes.
【００５５】本実施例において、グリッド電極１０は複
数のライン電極群からなり、面状電子源の電極群と直角
方向に配置される。また、電子通過孔１１は電子放出部
５のほぼ鉛直上に設けられグリッド電極１０を信号電
極、線電子源群を走査電極として、ＸＹマトリックス駆
動を行い画像を形成するものである。In the present embodiment, the grid electrode 10 is composed of a plurality of line electrode groups and is arranged in the direction perpendicular to the electrode group of the planar electron source. Further, the electron passage hole 11 is provided almost vertically above the electron emission portion 5, and the grid electrode 10 is used as a signal electrode and the line electron source group is used as a scanning electrode, and XY matrix driving is performed to form an image.
【００５６】蛍光体ターゲット６は、図５及び図６のご
とく、透明なガラス板の上に蛍光体が一様に塗布され、
さらにその上にメタルバックを設けたもので、導電性部
材８の鉛直上に位置する部位についても、外部から熱源
となる赤外光を照射した際に、それが透過できるように
透明板のみの構成にしてある。As shown in FIGS. 5 and 6, the phosphor target 6 is formed by uniformly applying the phosphor on a transparent glass plate.
Further, a metal back is provided on the transparent plate, so that even a portion positioned vertically above the conductive member 8 is made of only a transparent plate so that it can be transmitted through when infrared light serving as a heat source is radiated from the outside. It is configured.
【００５７】本実施例の画像表示装置において、電極１
と電極２に１６Ｖの電圧を印加することにより、直列に
接続構成された２個の電子放出部のうち一ケ所の電子放
出部から電子の放出が得られ、グリッド電極１０に適当
な電圧を印加することにより電子を引き出し、蛍光体タ
ーゲット６にかかる飛翔電子を衝突させた。本画像表示
装置は、当然ながら真空度１×１０-5〜１×１０-7Ｔｏ
ｒｒの環境下に置かれ、蛍光体ターゲット６に５００〜
５０００Ｖの電圧を印加した。In the image display device of this embodiment, the electrode 1
By applying a voltage of 16 V to the electrode 2 and the electrode 2, electrons can be emitted from one electron emitting portion of the two electron emitting portions connected in series, and an appropriate voltage is applied to the grid electrode 10. By doing so, electrons were extracted and the flying electrons on the phosphor target 6 collided. This image display device, of course, has a vacuum degree of 1 × 10 −5 to 1 × 10 −7 To.
It is placed under the environment of rr and the phosphor target 6 is 500 ~
A voltage of 5000V was applied.
【００５８】かかる画像表示装置を駆動して画像表示を
行ったところ、発光輝度の低い電子照射領域７が見うけ
られた。そこで、かかる電子照射領域７に電子を衝突さ
せる電子放出部５の切り換えを行った。When such an image display device was driven to display an image, an electron irradiation region 7 having low emission brightness was found. Therefore, the electron emission unit 5 that causes the electrons to collide with the electron irradiation region 7 is switched.
【００５９】切り換えの方法は、まず、本画像表示装置
にあっては、直列に接続された電子放出部５のうちどち
らから電子が照射されても、蛍光体ターゲット６上の発
光部に目視上何ら影響が生じない表示画像が得られるよ
うに、直列に接続した電子放出部５の間隔を１０μｍと
したが、顕微鏡等を用いることにより、どちらの電子放
出部から電子が照射されているか充分判断することがで
きるため、電子照射領域を拡大し、照射状態から電子放
出部５を特定した。The switching method is as follows. In the image display device, no matter which one of the electron emitting portions 5 connected in series is irradiated with electrons, the light emitting portion on the phosphor target 6 is visually observed. The interval between the electron-emitting portions 5 connected in series was set to 10 μm so that a display image without any influence can be obtained. By using a microscope or the like, it is possible to sufficiently determine which electron-emitting portion is radiating the electron. Therefore, the electron irradiation area was enlarged and the electron emitting portion 5 was specified from the irradiation state.
【００６０】次に、熱源として赤外光を用い、蛍光体タ
ーゲット６の透明板のみの透過領域１３と、グリッド電
極１０の電子通過孔１１を通し、導電性部材８に照射し
て溶解させ、電子放出部５を形成する電極１，２を短絡
させ電子放出部を切り換えた。尚、熱源となる赤外光の
透過領域１３に相当するものを電子源が形成された基板
４側に設けて、同様に切り換えても同等な効果が得られ
る。Next, infrared light is used as a heat source, and the conductive member 8 is irradiated with the infrared light through the transparent region 13 of the phosphor target 6 and the electron passage hole 11 of the grid electrode 10 to be melted. The electrodes 1 and 2 forming the electron emitting portion 5 were short-circuited to switch the electron emitting portion. It should be noted that the same effect can be obtained by providing a portion corresponding to the infrared light transmitting region 13 serving as a heat source on the side of the substrate 4 on which the electron source is formed and similarly switching.
【００６１】本実施例において形成された画像表示装置
は、各電子放出部の切り換えができることにより、放出
される電子量が等しくなり明るさが均一な表示画面が得
られた。さらに、１画素中に電子放出部を２ケ所有して
いるため、寿命がのびるといった効果が得られた。さら
に、本実施例で用いた面状電子源が製造途中で電子放出
部に欠陥が発生しても、修正できることから、製造時の
面状電子源の歩留りが向上する効果がある。In the image display device formed in this embodiment, each electron emitting portion can be switched, so that the amount of emitted electrons becomes equal and a display screen with uniform brightness can be obtained. Further, since one pixel has two electron emission portions, the effect of extending the life was obtained. Further, even if a defect occurs in the electron emitting portion of the planar electron source used in the present embodiment during the manufacturing process, it can be repaired, so that the yield of the planar electron source during manufacturing can be improved.
【００６２】以上、本実施例は画像表示装置についての
み説明してきたが、画像形成部材としては、蛍光体の他
にレジスト材や薄膜金属のような電子ビームが衝突する
ことにより状態が変化する全ての部材が含まれ、電子ビ
ーム応用装置としては、記録装置，記憶装置，電子ビー
ム描画装置等の様々な装置があり、本発明は電子放出素
子が複数配置された面状電子源を用いた画像表示装置で
あれば同等の効果がある。Although only the image display device has been described in this embodiment, as the image forming member, all the states that change due to the collision of electron beams such as resist material and thin film metal in addition to the phosphors. The electron beam application device includes various devices such as a recording device, a storage device, and an electron beam drawing device. The present invention provides an image using a planar electron source in which a plurality of electron-emitting devices are arranged. A display device has the same effect.
【００６３】[0063]
【発明の効果】以上説明したように、電気的に直列に接
続した複数の電子放出部と、該電子放出部を切り換える
手段を有する構成とすることで、電子放出素子あるいは
画像形成装置として次のような効果がある。
．電子放出部を容易に切り換え得るだけでなく、素子
間で特性のばらつきの少ない素子の製造が可能となる。
．電子放出部の製造時の歩留りが向上する。
．複数の電子放出部から構成されているため、電子放
出の寿命が向上する。
．画像表示装置として均一な発光輝点の画像表示が得
られる。As described above, a plurality of electron-emitting portions electrically connected in series and a means for switching the electron-emitting portions are provided so that an electron-emitting device or an image forming apparatus having the following structure can be obtained. There is such an effect. ． Not only can the electron emitting portions be easily switched, but also it is possible to manufacture devices with less variation in characteristics between devices. ． The yield at the time of manufacturing the electron emitting portion is improved. ． Since it is composed of a plurality of electron emitting portions, the life of electron emission is improved. ． As an image display device, a uniform image display of luminous bright spots can be obtained.
【図１】本発明の実施例１における電子放出素子の構成
図を示す。FIG. 1 is a configuration diagram of an electron-emitting device according to a first embodiment of the present invention.
【図２】本発明の実施例１における電子放出素子の製造
方法を示した工程図である。FIG. 2 is a process drawing showing the method for manufacturing the electron-emitting device according to the first embodiment of the present invention.
【図３】本発明の実施例２における電子放出素子の構成
図を示す。FIG. 3 is a configuration diagram of an electron-emitting device according to a second embodiment of the present invention.
【図４】本発明の実施例３における電子放出素子の構成
図を示す。FIG. 4 is a configuration diagram of an electron-emitting device according to a third embodiment of the present invention.
【図５】本発明の実施例４における蛍光体ターゲットの
構成図を示す。FIG. 5 shows a block diagram of a phosphor target in Example 4 of the present invention.
【図６】本発明の実施例４における画像表示装置の構成
図を示す。FIG. 6 is a configuration diagram of an image display device according to a fourth embodiment of the present invention.
【図７】従来の通電加熱によって作製された電子放出素
子の構成図を示す。FIG. 7 shows a configuration diagram of an electron-emitting device manufactured by conventional energization heating.
【図８】従来の微粒子膜又は微粒子を含む薄膜導電体を
通電処理することにより形成された電子放出素子の構成
図である。FIG. 8 is a configuration diagram of an electron-emitting device formed by applying a current to a conventional fine particle film or a thin film conductor containing fine particles.
１ 電極 ２ 電極 ３ 微粒子膜 ４ 基板 ５ 電子放出部 ６ 蛍光体ターゲット ７ 電子照射領域（発光部） ８ 導電性部材 ９ 赤外光またはレーザー １０ グリッド電極 １１ 電子通過孔 １２ 薄膜 １３ 透明板のみの蛍光体ターゲット 1 electrode 2 electrodes 3 Fine particle film 4 substrates 5 Electron emission part 6 Phosphor target 7 Electron irradiation area (light emitting part) 8 Conductive member 9 Infrared light or laser 10 grid electrode 11 electron passage hole 12 thin film 13 Phosphor target with transparent plate only
───────────────────────────────────────────────────── フロントページの続き (72)発明者 金子 哲也 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (72)発明者 鱸 英俊 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Tetsuya Kaneko 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation (72) Inventor Hidetoshi 3-30-2 Shimomaruko, Ota-ku, Tokyo Non non corporation
Claims (4)
子の電子放出部が、 電気的に直列に複数接続され、かつ、該複数の電子放出
部のうち電子を放出する部位を電気的に切り替える手段
を有することを特徴とする表面伝導形電子放出素子。1. In a surface conduction electron-emitting device, a plurality of electron-emitting portions of the device are electrically connected in series, and an electron-emitting portion of the plurality of electron-emitting portions is electrically switched. A surface-conduction type electron-emitting device having means.
より、電子放出部を電気的に接続して切り替えることを
特徴とする請求項１記載の表面伝導形電子放出素子。2. The surface conduction electron-emitting device according to claim 1, wherein the switching means electrically connects and switches the electron-emitting portion by using a conductive member and heat.
放出素子と、該素子から放出される電子ビームを変調又
は加速する電極と、電子ビームの照射により発光する蛍
光面部材とを、少なくとも内装する外囲器を有する画像
表示装置であって、該外囲器に熱源光を透過する領域を
有することを特徴とする画像表示装置。3. The surface conduction electron-emitting device according to claim 1, an electrode for modulating or accelerating an electron beam emitted from the device, and a phosphor screen member emitting light by irradiation of the electron beam. An image display device having at least an interior envelope, wherein the envelope has a region for transmitting heat source light.
することを特徴とする請求項３記載の画像表示装置。4. The image display device according to claim 3, wherein the transmissive region is located in the phosphor screen member.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18166391A JP3185064B2 (en) | 1991-06-27 | 1991-06-27 | Method of manufacturing surface conduction electron-emitting device |
| US08/820,028 US6313815B1 (en) | 1991-06-06 | 1997-03-19 | Electron source and production thereof and image-forming apparatus and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18166391A JP3185064B2 (en) | 1991-06-27 | 1991-06-27 | Method of manufacturing surface conduction electron-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0512986A true JPH0512986A (en) | 1993-01-22 |
| JP3185064B2 JP3185064B2 (en) | 2001-07-09 |
Family
ID=16104695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18166391A Expired - Fee Related JP3185064B2 (en) | 1991-06-06 | 1991-06-27 | Method of manufacturing surface conduction electron-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3185064B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6746884B2 (en) | 2001-03-29 | 2004-06-08 | Kabushiki Kaisha Toshiba | Method of manufacturing field-emission electron emitters and method of manufacturing substrates having a matrix electron emitter array formed thereon |
| US6794822B2 (en) | 2001-11-13 | 2004-09-21 | Matsushita Electric Industrial Co., Ltd. | Field emission electron source, electron gun and cathode ray tube device using the same |
| US6943491B2 (en) | 2002-01-15 | 2005-09-13 | Matsushita Electric Industrial Co., Ltd. | Picture tube device having lead electrode with a curved shape |
| KR100556745B1 (en) * | 2003-11-04 | 2006-03-10 | 엘지전자 주식회사 | Field emission device |
| KR100739148B1 (en) * | 2005-11-22 | 2007-07-13 | 엘지전자 주식회사 | Surface conduction electron emitting display device and manufacturing method thereof |
| US7365481B2 (en) | 2001-12-10 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Field emission device with change in emission property |
| KR100869792B1 (en) * | 2003-01-29 | 2008-11-21 | 삼성에스디아이 주식회사 | Field emission display device |
-
1991
- 1991-06-27 JP JP18166391A patent/JP3185064B2/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6746884B2 (en) | 2001-03-29 | 2004-06-08 | Kabushiki Kaisha Toshiba | Method of manufacturing field-emission electron emitters and method of manufacturing substrates having a matrix electron emitter array formed thereon |
| US6794822B2 (en) | 2001-11-13 | 2004-09-21 | Matsushita Electric Industrial Co., Ltd. | Field emission electron source, electron gun and cathode ray tube device using the same |
| US7365481B2 (en) | 2001-12-10 | 2008-04-29 | Matsushita Electric Industrial Co., Ltd. | Field emission device with change in emission property |
| US6943491B2 (en) | 2002-01-15 | 2005-09-13 | Matsushita Electric Industrial Co., Ltd. | Picture tube device having lead electrode with a curved shape |
| KR100869792B1 (en) * | 2003-01-29 | 2008-11-21 | 삼성에스디아이 주식회사 | Field emission display device |
| KR100556745B1 (en) * | 2003-11-04 | 2006-03-10 | 엘지전자 주식회사 | Field emission device |
| KR100739148B1 (en) * | 2005-11-22 | 2007-07-13 | 엘지전자 주식회사 | Surface conduction electron emitting display device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3185064B2 (en) | 2001-07-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3634828B2 (en) | Manufacturing method of electron source and manufacturing method of image display device | |
| JPH0512986A (en) | Surface conductive electron emitting element and image display device using it | |
| JP2946140B2 (en) | Electron emitting element, electron source, and method of manufacturing image forming apparatus | |
| US6910936B2 (en) | Method of transforming polymer film into carbon film in electron-emitting device | |
| JP2631007B2 (en) | Electron emitting element, method of manufacturing the same, and image forming apparatus using the element | |
| JP2949639B2 (en) | Electron emitting element, electron source, image forming apparatus, and method of manufacturing them | |
| JP2961523B2 (en) | Electron emitting element, electron source and image forming apparatus | |
| KR100378103B1 (en) | Electron source, image forming apparatus, and manufacture method for electron source | |
| JP2003045334A (en) | Manufacturing method of vacuum container and image forming device | |
| JP2916807B2 (en) | Electron emitting element, electron source, image forming apparatus, and method of manufacturing them | |
| JP3413192B2 (en) | Method of manufacturing electron-emitting device and image forming apparatus | |
| JP2961524B2 (en) | Electron emitting element, electron source and image forming apparatus | |
| JPH052984A (en) | Surface conductive electron emitting element, electron emission device, and image forming device | |
| JP2916808B2 (en) | Electron-emitting device, electron source, image forming apparatus, and manufacturing method thereof | |
| JP2727223B2 (en) | Image forming device | |
| JP2748143B2 (en) | Electron beam light emitting device | |
| JP2992902B2 (en) | Electron beam generator | |
| JP2715314B2 (en) | Image forming apparatus and driving method thereof | |
| JPH06203741A (en) | Electron emitting element, electron beam generator and image forming device | |
| JP3397414B2 (en) | Electron source and its manufacturing method, and image forming apparatus and its manufacturing method | |
| JPH0512987A (en) | Electron emitting device and image forming device using it | |
| JPH1055748A (en) | Electron emission element, electron source, and image forming device | |
| JP2933855B2 (en) | Electron emitting element, electron beam generator using the same, and method of manufacturing image forming apparatus | |
| JPH04359830A (en) | Electron emitting device and image forming apparatus using device therein | |
| JP2000251680A (en) | Electron source substrate, image forming device, and manufacture of electron source substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20010321 |
|
| LAPS | Cancellation because of no payment of annual fees |